JP2015076487A - Method of manufacturing liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a liquid crystal display device capable of suppressing the reduction in an etching rate of metal wiring.SOLUTION: A method of manufacturing a liquid crystal display device includes: a step S501 for carrying a substrate having a Ti/Al-Si/Ti metal film into a chamber of a dry etching device; steps (S505, S506) for making reaction gas containing chlorine into plasma and etching and processing the metal film; and a step S507-1 for supplying oxygen gas while vacuum-sucking the inside of a chamber and purging oxygen for 20 seconds at a pressure equal to or less than 1.3 Pa.

Description

  The present invention relates to a method for manufacturing a horizontal electric field type liquid crystal display device.

  In a liquid crystal display device, a TFT substrate having pixels having a pixel electrode and a thin film transistor (TFT) formed in a matrix, and a color filter or the like is formed at a position corresponding to the pixel electrode of the TFT substrate so as to face the TFT substrate. A counter substrate is disposed, and a liquid crystal is sandwiched between the TFT substrate and the counter substrate. An image is formed by controlling the light transmittance of the liquid crystal molecules for each pixel.

  Since liquid crystal display devices are flat and lightweight, they are used in various fields. Small liquid crystal display devices are widely used in mobile phones and DSCs (Digital Still Cameras). A viewing angle characteristic is a problem in a liquid crystal display device. The viewing angle characteristic is a phenomenon in which luminance changes or chromaticity changes when the screen is viewed from the front and when viewed from an oblique direction. The viewing angle characteristic is excellent in an IPS (In Plane Switching) system in which liquid crystal molecules are operated by a horizontal electric field. An IPS liquid crystal display device is described in Patent Document 1, for example. Further, for example, Patent Document 2 describes a metal microfabrication technique.

JP 2012-128159 A JP 2006-080421 A

  Display devices tend to have smaller pixel sizes for higher resolution, and pixel sizes are also reduced in IPS liquid crystal display devices. In full HD (number of pixels 1080RGB × 1920), the layout design of the pixel becomes strict, and in order to manufacture this, a source electrode and a drain electrode (the drain electrode forms a video signal line across each pixel. It is expected that it will be necessary to switch from isotropic wet etching to dry etching that is anisotropic and capable of fine processing. When using a dry etching technique, it is necessary to use a material suitable for the dry etching technique. Since the three-layer structure of MoW / Al—Si / MoW, which has a proven track record as a wiring material in the wet etching technology, is extremely difficult to prevent corrosion and shape control, the inventors have developed a Ti / Al— Focusing on the three-layer structure of Si / Ti, application to an IPS liquid crystal display device using chlorine-based gas as an etching gas was studied.

  FIG. 1 is an example of a pixel formed on the TFT substrate side of an IPS liquid crystal display device examined by the inventors, FIG. 2 is an enlarged view of a main part of the pixel, and FIG. 3 is an A diagram shown in FIG. It is sectional drawing in the -A line and the BB line. The pixel portion in the present liquid crystal display device has an opening for contacting the pixel electrode 102 on a source electrode 108 connected to a source region (not shown) of a thin film transistor (TFT) as shown in FIG. A third interlayer insulating film covering the source electrode 108, the organic insulating film 113, and the common electrode 103, and forming a common electrode (counter electrode) 103 on the organic insulating film 113. 116 is formed, and a pixel electrode 102 having a comb-like portion is formed on the third interlayer insulating film 116. The pixel electrode 102 and the source electrode 108 are in contact with each other through a second through hole 110 provided in the organic insulating film 113, the common electrode 103, and the third interlayer insulating film 116. Reference numeral 101 denotes a TFT substrate, reference numeral 104 denotes a pixel, reference numeral 105 denotes a semiconductor layer, reference numeral 106 denotes a gate electrode (the gate electrode forms a scanning signal line across each pixel, but here is referred to as a gate electrode), reference numeral Reference numeral 107 denotes a drain electrode, reference numeral 109 denotes a first through hole, reference numeral 111 denotes a gate insulating film, reference numerals 112 and 114 denote first and second interlayer insulating films. Here, a silicon oxide film and a second insulating film are used as the first insulating film. A silicon nitride film was used. The Ti / Al—Si / Ti three-layer metal wiring formed on the TFT substrate having such a structure and serving as the source electrode 108 and the drain electrode 107 was dry-etched.

  FIG. 10 shows the relationship between the number of starts in the dry etching process and the etching time. As can be seen from FIG. 10, there was a phenomenon in which the etching time of Ti / Al—Si / Ti increased as the number of starts (treatments) increased, that is, the etching rate slowed. If the etching rate changes from one sheet to another, the processing capability and the processing shape are hindered, which is a problem.

  An object of the present invention is to provide a method of manufacturing a liquid crystal display device that can suppress a decrease in the etching rate of a metal wiring even when the metal wiring is dry-etched.

As an embodiment for achieving the above object, in a method of manufacturing a liquid crystal display device having a thin film transistor arranged for each pixel region,
Forming a Ti / Al-Si / Ti three-layer metal film covering a source region of the thin film transistor formed on the substrate;
A second step of carrying the substrate into a chamber of a dry etching apparatus;
A third step of supplying a reaction gas containing chlorine to the inside of the chamber, forming a plasma, and etching the metal film into a desired shape to form a source electrode;
A fourth step of evacuating the interior of the chamber after stopping the supply of the reaction gas to the interior of the chamber;
And a fifth step of supplying oxygen gas while evacuating the inside of the chamber and performing oxygen purge for 20 seconds or more at a pressure of 1.3 Pa or less. .

Further, in a method of manufacturing a liquid crystal display device having a thin film transistor arranged for each pixel region,
Forming a Ti / Al-Si / Ti three-layer metal film covering a source region of the thin film transistor formed on the substrate;
A second step of forming a resist film having a desired shape on the metal film;
A third step of carrying the substrate into a chamber of a dry etching apparatus;
A fourth step of supplying a reaction gas containing chlorine to the inside of the chamber, turning it into plasma, and etching the metal film not covered with the resist film to form a source electrode;
A fifth step of evacuating the interior of the chamber after stopping the supply of the reaction gas to the interior of the chamber;
A sixth step of supplying a first oxygen gas while evacuating the inside of the chamber and performing an oxygen purge for 20 seconds or more at a pressure of 1.3 Pa or less;
A seventh step of stopping the supply of the first oxygen gas into the chamber and evacuating;
An eighth step of supplying the second oxygen gas so that the pressure inside the chamber is between 13.3 and 66.7 Pa;
And a ninth step of removing the resist film by ozonizing the second oxygen gas.

  ADVANTAGE OF THE INVENTION According to this invention, even when it is a case where metal wiring is dry-etched, the manufacturing method of the liquid crystal display device which can suppress the etching rate fall of metal wiring can be provided.

It is a schematic plan view which shows an example of the pixel part of the liquid crystal display device which the inventors examined and produced in the Example. It is a principal part enlarged plan view which shows an example of the pixel part of the liquid crystal display device which the inventors examined and produced in the Example. FIG. 3 is a cross-sectional view taken along line A-A ′ and line B-B ′ shown in FIG. 2. It is a schematic cross-sectional schematic diagram in a dry etching apparatus for explaining the dry etching processing method of metal wiring examined by the inventors, the upper figure is the state before dry etching, the middle figure is the state during dry etching, the lower figure is The state after dry etching (reaction gas stop and evacuation) is shown. It is a flowchart of the metal wiring processing process in the manufacturing method of a liquid crystal display device, (a) is a flowchart which inventors examined, (b) shows the flowchart used in the Example. FIG. 2 is a schematic cross-sectional schematic view in a dry etching apparatus for explaining a dry etching processing method for metal wiring in a method for manufacturing a liquid crystal display device according to an embodiment of the present invention. The state during dry etching, the figure below shows the state after dry etching (reaction gas stop and evacuation). It is a schematic plan view of the pixel part of the liquid crystal display device produced using the manufacturing method of the liquid crystal display device which concerns on the Example of this invention. It is a schematic sectional drawing in the AA line shown in FIG. FIG. 6 is a flow diagram (upper diagram) for producing a pixel portion TFT of a liquid crystal display device in a method for manufacturing a liquid crystal display device according to an embodiment of the present invention, and a cross-sectional view (lower diagram) of the main part of the pixel after metal wiring processing. It is a figure for demonstrating the subject in the metal wiring processing process which inventors examined, and shows the relationship between the number of the starts in a processing process, and etching time. It is a figure for demonstrating the effect in the metal wiring processing process in the manufacturing method of the liquid crystal display device which concerns on the Example of this invention, and shows the relationship between the number of starts in a processing process, and etching time.

  The inventors pay attention to the reaction product adhering to the processing chamber wall of the dry etching apparatus because the etching rate of the Ti / Al—Si / Ti three-layer film is related to the number of processed sheets. did. FIG. 4 is a schematic cross-sectional schematic view in the dry etching apparatus for explaining the dry etching processing method of the metal wiring examined by the inventors. The upper diagram is a state before dry etching, and the middle diagram is a state during dry etching. The lower figure shows the state after dry etching (reaction gas stop and evacuation). FIG. 5A is a flowchart of a metal wiring processing step in the method of manufacturing a liquid crystal display device examined by the inventors.

First, a substrate to be processed (TFT substrate) on which a metal layer, which is a three-layer film of Ti / Al—Si / Ti, is transferred into a chamber (CH) where processing is performed (FIG. 5A, S501). Next, BCl ₃ gas is supplied (S502), and the pressure in the processing chamber is adjusted. Next, the surface oxide layer of the metal layer which is a three-layer film of Ti / Al—Si / Ti is etched by plasma discharge using BCl ₃ gas (FIG. 5A, S503). Subsequently, the discharge and the supply of BCl ₃ gas are stopped, and evacuation is performed (FIG. 5 (a) S504).

Next, in the state “before dry etching” shown in the upper diagram of FIG. 4, Ti / Al—Si / Ti of the source electrode 108 and the drain electrode 107 disposed on the lower electrode 211 of the dry etching apparatus. A mixed gas of chlorine (Cl ₂ ) and nitrogen (N ₂ ) as a reaction gas is dry-etched from the upper electrode 210 side of the dry etching apparatus so as to go to the TFT substrate 101 on which the metal layer that is a three-layer film is formed. It is introduced into the chamber (processing chamber) 201 of the apparatus (FIG. 5 (a) S505). Reference numeral 115 denotes a resist film patterned for processing the metal layer. In FIG. 4, a part of the laminated film formed on the TFT substrate 101 is omitted.

Dry etching is started by converting a mixed gas of Cl ₂ and N ₂ into plasma, and a metal film, which is a three-layer film of Ti / Al—Si / Ti, is etched using the resist film 115 as a mask. The drain electrode 107 is formed (FIG. 5A, S506, FIG. 4). At the time of dry etching, chlorine in the reaction gas, an etched metal film, particularly an aluminum (Al) compound (reaction product) with a high content adheres to the inner wall of the chamber 201.

  After the dry etching, the discharge and the supply of the reaction gas are stopped, and vacuuming is performed (FIG. 5 (a) S507, lower diagram in FIG. 4).

Subsequently, oxygen (O ₂ ) gas is supplied into the chamber, and the pressure is adjusted (20.0 Pa, chamber outer wall temperature 80 to 100 ° C.) (FIG. 5 (a) S508). After flowing an oxygen (O ₂ ) gas for 20 seconds, the resist film damaged by dry etching is removed (ashing) by discharging oxygen into ozone and discharging (FIG. 5 (a) S509). Next, the discharge and the supply of O ₂ gas are stopped, and evacuation is performed (FIG. 5 (a) S510). Thereafter, the processed substrate is unloaded (S511), and the dry etching process is completed. By repeating this, the amount of Cl ₂ or Al compound (reaction product) attached to the inner wall of the chamber seemed to increase.

  If the cause of the decrease in the etching rate is a reaction product adhering to the inner wall of the processing chamber, depending on the type of gas that flows after that, it will react with the reaction product and affect its increase and decrease, and the etching rate will have some effect. I thought. Therefore, the inventors set the temperature of the stage on which the sample is placed to 40 ° C., the temperature of the outer wall of the chamber to 80 to 100 ° C., and when various gases were flowed, they were simply evacuated, nitrogen gas was flushed, and rare gas was flushed. Etc. do not affect the etching rate, but the etching rate is obtained by air-flowing oxygen gas at a flow rate of 2.0 L / min or less (for example, 1.0 L / min) and a pressure of 1.3 Pa or less (for example, 0.3 Pa). Has been found to be effective, and the air flushing time is effective for 20 seconds or more. The present invention was born based on the above new findings.

  Hereinafter, the present invention will be described in detail with reference to examples. In addition, the same code | symbol shows the same component.

A first embodiment of the present invention will be described.
A metal wiring processing step in the method for manufacturing the liquid crystal display device according to this example will be described with reference to FIGS. FIG. 5B is a flowchart of the metal wiring processing step in the method for manufacturing the liquid crystal display device used in the example. FIG. 6 is a schematic cross-sectional schematic view in a dry etching apparatus for explaining a dry etching method for metal wiring in a method for manufacturing a liquid crystal display device according to an embodiment of the present invention. The middle diagram shows the state during dry etching, and the lower diagram shows the state after dry etching (reaction gas stop and evacuation).

First, a substrate to be processed (TFT substrate) on which a metal layer, which is a three-layer film of Ti / Al—Si / Ti, is transferred into a chamber (CH) where processing is performed (FIG. 5B, S501). Next, BCl ₃ gas is supplied (S502 in FIG. 5B), and the pressure in the processing chamber is adjusted. Next, the surface oxide layer of the metal layer which is a three-layer film of Ti / Al—Si / Ti is etched by plasma discharge using BCl ₃ gas (FIG. 5B, S503). Subsequently, the discharge and the supply of BCl ₃ gas are stopped, and evacuation is performed (FIG. 5 (b) S504).

Next, in the state “before dry etching” shown in the upper diagram of FIG. 6, a Ti / Al—Si / Ti three-layer film disposed on the lower electrode 211 and serving as the source electrode 108 and the drain electrode 107. A mixed gas of chlorine (Cl ₂ ) and nitrogen (N ₂ ) as a reaction gas is introduced into the chamber (processing chamber) 201 from the upper electrode 210 side so as to go to the TFT substrate 101 on which a certain metal layer is formed. (FIG. 5 (b) S505). Reference numeral 105 denotes a semiconductor layer, reference numeral 111 denotes a gate insulating film, reference numeral 112 denotes a first interlayer insulating film, and reference numeral 115 denotes a resist film patterned for processing a metal layer. In FIG. 6, a part of the laminated film formed on the TFT substrate 101 is omitted, and the configuration of each layer formed on the TFT substrate is not limited to this. Note that the names such as source and drain are for convenience, and when one is a source, the other can be called a drain.

Next, dry etching is started by turning a mixed gas of Cl ₂ and N ₂ into plasma, and a metal film that is a three-layer film of Ti / Al—Si / Ti is etched using the resist film 115 as a mask, The electrode 108 and the drain electrode 107 are formed (FIG. 5 (b) S506, the diagram in FIG. 6). At the time of dry etching, chlorine in the reaction gas, an etched metal film, particularly an aluminum (Al) compound (reaction product) with a high content adheres to the inner wall of the chamber 201.

  After dry etching, the discharge and reaction gas supply are stopped, and vacuuming is performed (FIG. 5B, S507).

Next, evacuation was performed while supplying oxygen (O ₂ ) gas into the chamber (1.0 L / min), and the chamber was purged for 20 seconds at a pressure of 0.3 Pa with a chamber outer wall temperature of 80 to 100 ° C. ( FIG. 5 (b) S507-1). Then, by stopping the supply of _{O 2} gas were evacuated chamber 40 seconds ((FIG. 5 (b) S507-2, the FIG. 6 below). This, of _{O 2} gas and _Cl 2, Al It is presumed that the reaction was promoted and the reaction product adhering to the inner wall of the chamber was easily exhausted.

Subsequently, oxygen (O ₂ ) gas is supplied into the chamber (2.0 L / min), and the pressure is adjusted (20.0 Pa, chamber outer wall temperature 80 to 100 ° C.) (FIG. 5B, S508). In addition, the pressure of the oxygen gas at this time can be set to 13.3 to 66.7 Pa. After flowing an oxygen (O ₂ ) gas for 20 seconds, the resist film damaged by dry etching is removed (ashing) by discharging oxygen into ozone, and discharging treatment is performed (FIG. 5B, S509). Next, the discharge and the supply of O ₂ gas are stopped, and vacuuming is performed (S510 in FIG. 5B). Thereafter, the processed substrate was unloaded (FIG. 5B, S511), and the dry etching process was completed.

FIG. 11 shows the result of examining the relationship between the number of processes and the etching time by repeating this metal wiring processing step for a plurality of substrates. It was found that the etching time does not increase even when the number of processed sheets is increased by performing the O ₂ purge for 20 seconds or longer (20 to 40 seconds), compared with the case where the O ₂ purge is not performed (0 seconds). The effect is obtained when the oxygen purge time in step S507-1 is 20 seconds or longer. However, if it is too long, the throughput in the metal wiring processing step is lowered, so that it is desirable within practically 40 seconds.

  Next, a manufacturing method of a TFT substrate of a liquid crystal display device using the metal wiring process will be briefly described with reference to FIG.

  First, in step 1, the TFT substrate 101 is put into a manufacturing process. In Step 2 to Step 6, a patterned light shielding metal film 121 for blocking light to the channel layer of the TFT is formed. This light-shielding metal film is for shielding light incident on the TFT, particularly the channel portion. Next, in steps 7 to 14, a base three-layer film of amorphous Si (a-Si) film / silicon oxide (SiO) film / silicon nitride (SiN) film is formed, and the a-Si film is polycrystallized. By patterning, a first base film (SiN film) 122, a second base film (SiO film) 123, and a polycrystallized and patterned semiconductor layer (polycrystal Si layer) 105 are obtained. A TFT channel is formed in the semiconductor layer 105. Next, in Step 15 to Step 16, the gate insulating film 111 is formed using TEOS (tetraethoxysilane). Next, in steps 17 to 19, the impurity concentration in the semiconductor layer 105 serving as a TFT channel is adjusted by ion implantation of boron (B) serving as a p-type impurity. Subsequently, in Step 20 to Step 23, the gate electrode 106 is formed. Next, in Step 24 to Step 27, source / drain regions are formed in a predetermined region of the semiconductor layer 105 by ion implantation of phosphorus (P) as an n-type impurity. Next, in Step 28 to Step 33, a first interlayer insulating film 112 and a second interlayer insulating film 114 are formed. Next, in Step 34 to Step 36, a through hole (first through hole) 109 for the source region and the drain region is formed.

  Subsequently, in steps 37 to 42, a metal layer of Ti / Al-Si / Ti is formed by sputtering, and the source electrode 108 and the wiring 107 serving as the drain electrode are formed by the metal wiring processing step shown in FIG. (Only the source electrode is shown in the lower diagram of FIG. 9).

  Next, in Step 43 to Step 45, an organic insulating film (organic passivation film; organic PAS film) is formed so as to cover the source electrode 108. Next, in step 46 to step 52, the common electrode (counter electrode) 103 is formed. Next, in steps 53 to 55, a third interlayer insulating film 116 is formed so as to cover the common electrode 103. Next, in steps 56 to 58, a through hole (second through hole) 110 for the source electrode 108 is formed. Subsequently, in Step 59 to Step 65, the comb-like pixel electrode 102 connected to the source electrode 108 is formed, and the TFT is completed.

  Thereafter, a TFT substrate on which the TFT is formed and a CF substrate on which a separately prepared color filter or the like is formed are bonded to each other with a liquid crystal interposed therebetween, whereby a liquid crystal display panel is obtained. Furthermore, a liquid crystal display device is completed by incorporating a liquid crystal display panel and, if necessary, a backlight or the like into the frame.

  FIG. 7 is a schematic plan view of the pixel portion, and FIG. 8 is a sectional view taken along line AA in FIG. Reference numeral 116 denotes a third interlayer insulating film. By using the process shown in Fig. 5 (b) in the metal wiring processing process, it is possible to suppress a decrease in the etching speed of the metal wiring, so that a stable etching speed can be obtained for each sheet, and the processing performance is not reduced. It has become possible to perform good processing under the same conditions without complicating the processing conditions.

  As described above, according to this embodiment, it is possible to provide a method of manufacturing a liquid crystal display device that can suppress a decrease in the etching rate of the metal wiring even when the metal wiring is dry-etched.

  In addition, this invention is not limited to an above-described Example, Various modifications are included. For example, the above-described embodiments have been described in detail for easy understanding of the present invention, and are not necessarily limited to those having all the configurations described.

DESCRIPTION OF SYMBOLS 101 ... TFT substrate, 102 ... Pixel electrode, 103 ... Counter electrode (common electrode), 104 ... Pixel, 105 ... Semiconductor layer, 106 ... Gate electrode (scanning signal line), 107 ... Drain electrode (video signal line), 108 ... Source electrode 109 ... first through hole 110 ... second through hole 111 ... gate insulating film 112 ... first interlayer insulating film 113 ... organic insulating film (organic passivation film, organic PAS film) 114 ... second Interlayer insulating film, 115... Resist film, 116... Third interlayer insulating film, 121 .. light shielding metal film, 122... First base film, 123. ... upper electrode of dry etching apparatus, 211 ... lower electrode of dry etching apparatus.

Claims (11)

In a manufacturing method of a liquid crystal display device having a thin film transistor arranged for each pixel region,
Forming a Ti / Al-Si / Ti three-layer metal film covering a source region of the thin film transistor formed on the substrate;
A second step of carrying the substrate into a chamber of a dry etching apparatus;
A third step of supplying a reaction gas containing chlorine to the inside of the chamber, forming a plasma, and etching the metal film into a desired shape to form a source electrode;
A fourth step of evacuating the interior of the chamber after stopping the supply of the reaction gas to the interior of the chamber;
And a fifth step of supplying oxygen gas while evacuating the inside of the chamber and performing oxygen purge for 20 seconds or more at a pressure of 1.3 Pa or less. In the manufacturing method of the liquid crystal display device of Claim 1,
In the fifth step, the oxygen purge is performed in a time range of not less than 20 seconds and not more than 40 seconds. In the manufacturing method of the liquid crystal display device of Claim 1,
In the fifth step, the oxygen gas is supplied at a flow rate of 1.0 to 2.0 L / min, and the pressure of the oxygen gas is performed in a pressure range of 1.3 Pa or less. Method. In the manufacturing method of the liquid crystal display device of Claim 1,
The third step is a method of manufacturing a liquid crystal display device, wherein the reaction gas contains nitrogen. In the manufacturing method of the liquid crystal display device of Claim 1,
The method of manufacturing a liquid crystal display device, wherein the source electrode is connected to a comb-like pixel electrode. In a manufacturing method of a liquid crystal display device having a thin film transistor arranged for each pixel region,
Forming a Ti / Al-Si / Ti three-layer metal film covering a source region of the thin film transistor formed on the substrate;
A second step of forming a resist film having a desired shape on the metal film;
A third step of carrying the substrate into a chamber of a dry etching apparatus;
A fourth step of supplying a reaction gas containing chlorine to the inside of the chamber, turning it into plasma, and etching the metal film not covered with the resist film to form a source electrode;
A fifth step of evacuating the interior of the chamber after stopping the supply of the reaction gas to the interior of the chamber;
A sixth step of supplying a first oxygen gas while evacuating the inside of the chamber and performing an oxygen purge for 20 seconds or more at a pressure of 1.3 Pa or less;
A seventh step of stopping the supply of the first oxygen gas into the chamber and evacuating;
An eighth step of supplying the second oxygen gas so that the pressure inside the chamber is between 13.3 and 66.7 Pa;
And a ninth step of removing the resist film by ozonizing the second oxygen gas. In the manufacturing method of the liquid crystal display device of Claim 6,
In the sixth step, the oxygen purge is performed in a time range of 20 seconds to 40 seconds. In the manufacturing method of the liquid crystal display device of Claim 6,
In the sixth step, the oxygen gas is supplied at a flow rate of 1.0 to 2.0 L / min,
In the eighth step, the pressure of the second oxygen gas is performed in a pressure range of 13.3 Pa to 66.7 Pa. In a manufacturing method of a liquid crystal display device having a thin film transistor arranged for each pixel region,
Forming a Ti / Al-Si / Ti three-layer metal film covering a source region of the thin film transistor formed on the substrate;
A second step of forming a resist film having a desired shape on the metal film;
A third step of carrying the substrate into a chamber of a dry etching apparatus;
A fourth step of removing the surface oxide layer of the metal film;
A fifth step of forming a source electrode by supplying a reaction gas containing chlorine to the inside of the chamber, forming a plasma, and etching the metal film not covered with the resist film;
A sixth step of evacuating the interior of the chamber after stopping the supply of the reaction gas to the interior of the chamber;
A seventh step of supplying a first oxygen gas while evacuating the inside of the chamber and performing an oxygen purge for 20 seconds or more at a pressure of 1.3 Pa or less;
An eighth step of stopping the supply of the first oxygen gas into the chamber and evacuating;
A ninth step of supplying a second oxygen gas so that the pressure inside the chamber is between 13.3 and 66.7 Pa;
And a tenth step of removing the resist film by ozonizing the second oxygen gas. In the manufacturing method of the liquid crystal display device of Claim 9,
The method of manufacturing a liquid crystal display device, wherein the fourth step includes a step of removing a surface oxide layer of the metal film by converting BCl ₃ gas into plasma. In the manufacturing method of the liquid crystal display device of Claim 9,
The method of manufacturing a liquid crystal display device, wherein the seventh step is performed at a pressure of 0.3 Pa or less.

Images