JP2015070198A5 - - Google Patents

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Publication number
JP2015070198A5
JP2015070198A5 JP2013205081A JP2013205081A JP2015070198A5 JP 2015070198 A5 JP2015070198 A5 JP 2015070198A5 JP 2013205081 A JP2013205081 A JP 2013205081A JP 2013205081 A JP2013205081 A JP 2013205081A JP 2015070198 A5 JP2015070198 A5 JP 2015070198A5
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JP
Japan
Prior art keywords
susceptor
wafer pocket
pocket
wafer
heat source
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JP2013205081A
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English (en)
Japanese (ja)
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JP6189164B2 (ja
JP2015070198A (ja
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Priority to JP2013205081A priority Critical patent/JP6189164B2/ja
Priority claimed from JP2013205081A external-priority patent/JP6189164B2/ja
Publication of JP2015070198A publication Critical patent/JP2015070198A/ja
Publication of JP2015070198A5 publication Critical patent/JP2015070198A5/ja
Application granted granted Critical
Publication of JP6189164B2 publication Critical patent/JP6189164B2/ja
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JP2013205081A 2013-09-30 2013-09-30 成長装置 Active JP6189164B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013205081A JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013205081A JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

Publications (3)

Publication Number Publication Date
JP2015070198A JP2015070198A (ja) 2015-04-13
JP2015070198A5 true JP2015070198A5 (enExample) 2016-11-17
JP6189164B2 JP6189164B2 (ja) 2017-08-30

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ID=52836581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013205081A Active JP6189164B2 (ja) 2013-09-30 2013-09-30 成長装置

Country Status (1)

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JP (1) JP6189164B2 (enExample)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001010894A (ja) * 1999-06-24 2001-01-16 Mitsubishi Materials Silicon Corp 結晶成長用サセプタとこれを用いた結晶成長装置、およびエピタキシャル・ウェーハとその製造方法
JP4592849B2 (ja) * 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
JP4678386B2 (ja) * 2007-06-15 2011-04-27 住友電気工業株式会社 気相成長装置および気相成長方法
JP2009275254A (ja) * 2008-05-14 2009-11-26 Taiyo Nippon Sanso Corp 気相成長装置
JP2009275255A (ja) * 2008-05-14 2009-11-26 Taiyo Nippon Sanso Corp 気相成長装置
JP5697246B2 (ja) * 2011-04-13 2015-04-08 イビデン株式会社 エピタキシャル成長用サセプタ、これを用いたエピタキシャル成長装置およびこれを用いたエピタキシャル成長方法
JP2013138164A (ja) * 2011-12-01 2013-07-11 Stanley Electric Co Ltd 半導体製造装置

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