JP2015046595A - 酸化物半導体膜の作製方法 - Google Patents

酸化物半導体膜の作製方法 Download PDF

Info

Publication number
JP2015046595A
JP2015046595A JP2014156803A JP2014156803A JP2015046595A JP 2015046595 A JP2015046595 A JP 2015046595A JP 2014156803 A JP2014156803 A JP 2014156803A JP 2014156803 A JP2014156803 A JP 2014156803A JP 2015046595 A JP2015046595 A JP 2015046595A
Authority
JP
Japan
Prior art keywords
film
transistor
oxide
oxide semiconductor
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2014156803A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015046595A5 (enExample
Inventor
山崎　舜平
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2014156803A priority Critical patent/JP2015046595A/ja
Publication of JP2015046595A publication Critical patent/JP2015046595A/ja
Publication of JP2015046595A5 publication Critical patent/JP2015046595A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
JP2014156803A 2013-08-02 2014-07-31 酸化物半導体膜の作製方法 Withdrawn JP2015046595A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014156803A JP2015046595A (ja) 2013-08-02 2014-07-31 酸化物半導体膜の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013161426 2013-08-02
JP2013161426 2013-08-02
JP2014156803A JP2015046595A (ja) 2013-08-02 2014-07-31 酸化物半導体膜の作製方法

Publications (2)

Publication Number Publication Date
JP2015046595A true JP2015046595A (ja) 2015-03-12
JP2015046595A5 JP2015046595A5 (enExample) 2017-09-07

Family

ID=52426663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014156803A Withdrawn JP2015046595A (ja) 2013-08-02 2014-07-31 酸化物半導体膜の作製方法

Country Status (2)

Country Link
US (1) US20150034475A1 (enExample)
JP (1) JP2015046595A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142047A (ja) * 2014-01-29 2015-08-03 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
WO2017125796A1 (ja) * 2016-01-18 2017-07-27 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置、及び表示装置

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015125042A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Oxide, semiconductor device, module, and electronic device
TWI652362B (zh) 2014-10-28 2019-03-01 日商半導體能源研究所股份有限公司 氧化物及其製造方法
JP6647841B2 (ja) 2014-12-01 2020-02-14 株式会社半導体エネルギー研究所 酸化物の作製方法
WO2017134495A1 (ja) 2016-02-05 2017-08-10 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置、及び半導体装置の作製方法
US10916430B2 (en) 2016-07-25 2021-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN109545687B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体氧化的凹槽mosfet器件制造方法
CN109494147B (zh) * 2018-11-13 2020-10-30 中国科学院微电子研究所 基于交流电压下微波等离子体的碳化硅氧化方法
EP3828303A1 (en) * 2019-11-28 2021-06-02 Imec VZW Method for forming a film of an oxide of in, ga, and zn

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206348A (ja) * 2008-02-28 2009-09-10 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
JP2011058012A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd 半導体酸化物
JP2012034354A (ja) * 2010-07-01 2012-02-16 Semiconductor Energy Lab Co Ltd 固体撮像装置、半導体表示装置
JP2013144841A (ja) * 2011-06-08 2013-07-25 Semiconductor Energy Lab Co Ltd ターゲット、ターゲットの使用方法、及び半導体装置の作製方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1422312B1 (en) * 2001-08-02 2011-05-11 Idemitsu Kosan Co., Ltd. Sputtering target, transparent conductive film, and their manufacturing method
JP2010153802A (ja) * 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
WO2011065244A1 (en) * 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009206348A (ja) * 2008-02-28 2009-09-10 Honda Motor Co Ltd カルコパイライト型太陽電池の製造方法
JP2011058012A (ja) * 2009-09-07 2011-03-24 Sumitomo Electric Ind Ltd 半導体酸化物
JP2012034354A (ja) * 2010-07-01 2012-02-16 Semiconductor Energy Lab Co Ltd 固体撮像装置、半導体表示装置
JP2013144841A (ja) * 2011-06-08 2013-07-25 Semiconductor Energy Lab Co Ltd ターゲット、ターゲットの使用方法、及び半導体装置の作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHANG HUAFU, ET AL.: ""Influence of the distance between target and substarate on the properties of transparent conducting", JOURNAL OF SEMICONDUCTORS, vol. 30, no. 11, JPN6018030135, November 2009 (2009-11-01), pages 113002 - 1, ISSN: 0003853490 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015142047A (ja) * 2014-01-29 2015-08-03 出光興産株式会社 積層構造、その製造方法及び薄膜トランジスタ
WO2017125796A1 (ja) * 2016-01-18 2017-07-27 株式会社半導体エネルギー研究所 金属酸化物膜、半導体装置、及び表示装置
US10865470B2 (en) 2016-01-18 2020-12-15 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and display device
US11352690B2 (en) 2016-01-18 2022-06-07 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and display device
US12098458B2 (en) 2016-01-18 2024-09-24 Semiconductor Energy Laboratory Co., Ltd. Metal oxide film, semiconductor device, and display device

Also Published As

Publication number Publication date
US20150034475A1 (en) 2015-02-05

Similar Documents

Publication Publication Date Title
JP6445271B2 (ja) 半導体装置
JP2015046595A (ja) 酸化物半導体膜の作製方法
JP6420968B2 (ja) 酸化物半導体膜
JP6965389B2 (ja) トランジスタの作製方法
US8889477B2 (en) Method for forming thin film utilizing sputtering target
JP6005769B2 (ja) スパッタリング用ターゲット
JP2023109908A (ja) 酸化物の作製方法
JP5972410B2 (ja) スパッタリング用ターゲット
JP6460591B2 (ja) 酸化物半導体膜および半導体装置
TWI652822B (zh) 氧化物半導體膜及其形成方法
US10032872B2 (en) Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
JP2015201640A (ja) 半導体装置、モジュールおよび電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170726

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170726

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180807

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20180928