JP2015045786A - Method of manufacturing substrate for liquid crystal device and method of manufacturing liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate for a liquid crystal device and a method of manufacturing a liquid crystal device, which can efficiently form an alignment film capable of giving a pre-tilt to liquid crystal molecules by simple equipment.SOLUTION: In the method of manufacturing the liquid crystal device, a conductive film for a pixel electrode 9a is formed on one surface 10s of a first substrate 10 in a vacuum chamber by a dry process in a film deposition step. In a recessed portion forming step, a surface of the conductive film is subjected to dry etching without etching masks in the vacuum chamber in which the film deposition step is performed to form recessed portions 9e. In an alignment film forming step, an inorganic alignment film 16 comprising an oblique film on the surface 16s of which the recessed portions 9e are reflected is formed. In similar steps, a common electrode 21 is formed on one surface 20s of a second substrate 20 in a vacuum chamber by dry process and then recessed portions 21e are formed on a surface of the common electrode 21, and subsequently, an inorganic alignment film 26 comprising an oblique film on the surface 26s of which the recessed portions 21e are reflected is formed.

Description

  The present invention relates to a method for manufacturing a substrate for a liquid crystal device capable of giving a pretilt to liquid crystal molecules, and a method for manufacturing a liquid crystal device.

  In a liquid crystal device, an inorganic alignment film is used for the purpose of preventing deterioration of the alignment film due to light. Further, it has been proposed to control the direction in which the liquid crystal molecules are tilted when a voltage is applied to the liquid crystal by making the surface of the alignment film a predetermined shape and applying a pretilt to the liquid crystal molecules. For example, after forming a recess by ion milling on the surface of a light-transmitting conductive film formed by sputtering film formation, an alignment film is formed by ion beam sputtering on the surface of the light-transmitting conductive film. A technique for reflecting a concave portion on the lower layer side on the surface of this is proposed (Patent Document 1).

JP 2005-84143 A

  However, as in the technique described in Patent Document 1, three devices are required to form irregularities on the surface of the alignment film by using a sputtering film forming method, an ion milling method, and an ion beam sputtering method. For this reason, there is a problem that the configuration of the substrate processing apparatus becomes complicated, the cost required for the substrate processing apparatus increases, and the productivity decreases.

  In view of the above problems, an object of the present invention is to provide a method for manufacturing a substrate for a liquid crystal device, which can efficiently form an alignment film capable of imparting a pretilt to liquid crystal molecules with a substrate processing apparatus having a simple configuration, and a liquid crystal It is to provide a method for manufacturing an apparatus.

  In order to solve the above problems, in a method for manufacturing a substrate for a liquid crystal device and a method for manufacturing a liquid crystal device according to one embodiment of the present invention, a film is formed by a dry process on one side of a substrate in a vacuum chamber. A step of forming a recess in the surface of the film by performing dry etching without an etching mask on the surface of the film in the vacuum chamber, and an oblique direction on the surface of the film after the recess forming step. And an alignment film forming step of forming an inorganic alignment film made of a film.

  In the present invention, after a film is formed by a dry process in the film formation step, in the recess formation step, dry etching without an etching mask is performed on the surface of the film to form a recess on the surface of the film. Therefore, when an inorganic alignment film made of an orthorhombic film is formed in the alignment film forming step, an alignment film in which the concave portions are reflected on the surface of the alignment film is formed. For this reason, a pretilt can be imparted to the liquid crystal molecules. In addition, since the film forming process and the recess forming process are performed in the same vacuum chamber, the substrate processing apparatus can have a simple configuration. Therefore, the cost required for the substrate processing apparatus can be kept low, and productivity can be improved.

  Further, in the method for manufacturing a substrate for a liquid crystal device according to another aspect of the present invention and the method for manufacturing a liquid crystal device, dry etching without an etching mask is performed on one surface side of the substrate in a vacuum chamber, and the one surface side is subjected to dry etching. A recess forming step for forming a recess; a film forming step for forming a film on the one surface side in the vacuum chamber by a dry process; and an inorganic orientation comprising an orthorhombic film on the surface of the film after the film forming step. And an alignment film forming step of forming a film.

  In the present invention, in the recess forming process, dry etching without an etching mask is performed on the surface of the film to form a recess on the surface of the film, and then a film reflecting the recess on the surface is formed by a dry process in the film forming process. To do. Therefore, when an inorganic alignment film made of an orthorhombic film is formed in the alignment film forming step, an alignment film in which the concave portions are reflected on the surface of the alignment film is formed. For this reason, a pretilt can be imparted to the liquid crystal molecules by the alignment film made of an orthorhombic film. In addition, since the film forming process and the recess forming process are performed in the same vacuum chamber, the substrate processing apparatus can have a simple configuration. Therefore, the cost required for the substrate processing apparatus can be kept low, and productivity can be improved.

  In another aspect of the present invention, an insulating film forming step of forming an insulating film on the one surface side of the substrate and a contact hole forming step of forming a contact hole in the insulating film before the recess forming step In the film forming step, a conductive film is preferably formed as the film. According to such a configuration, foreign matter can be removed from the inside of the contact hole during the recess forming step, so that electrical connection within the contact hole can be reliably performed.

  In this invention, it is preferable to perform the said film-forming process and the said recessed part formation process continuously, without taking out the said board | substrate from the said vacuum chamber. According to such a configuration, the time required for transporting the substrate can be reduced, and the time required for evacuating the vacuum chamber can be reduced. Therefore, the productivity of the liquid crystal device can be increased.

  In the present invention, in the film forming step, the film is formed by sputtering film formation in which accelerated ions collide with a target, and in the concave portion forming step, the concave portion is formed by sputter etching in which accelerated ions collide with the substrate side. It is preferable. According to such a configuration, both the film forming process and the recess forming process can be performed by one sputtering apparatus.

  In the present invention, it is preferable to perform a cleaning process for cleaning one side of the substrate after the recess forming process and before the alignment film forming process. According to this configuration, it is possible to remove foreign matters generated in the recess forming step.

  In the present invention, the film is, for example, a conductive film for forming an electrode for applying a voltage to the liquid crystal layer.

  In the present invention, the conductive film is, for example, a conductive film for forming a pixel electrode, and a patterning process for patterning the conductive film to form a pixel electrode is performed before the alignment film forming process.

  In the present invention, the conductive film may be a conductive film for forming a common electrode.

  In the present invention, when the conductive film is a conductive film for forming a pixel electrode or a conductive film for forming a common electrode, one embodiment of the present invention can be defined as follows. In a method for manufacturing a substrate for a liquid crystal device and a method for manufacturing a liquid crystal device according to one embodiment of the present invention, a sputtering gas is introduced in a vacuum atmosphere, and the target is sputtered with a negative potential. In the same apparatus as the electrode forming step, an electrode forming step for forming an electrode in the direction and in the vacuum atmosphere into which the sputtering gas has been introduced, the substrate is made to have a negative potential, and the surface of the electrode is sputtered. A recess forming step for forming a recess on the surface of the substrate, and an alignment film forming step for forming an inorganic alignment film made of an orthorhombic film on the surface of the electrode after the recess forming step.

It is explanatory drawing of an example of the liquid crystal panel of the transmissive | pervious liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of an example of the pixel of the transmissive liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the orientation film etc. of the transmissive liquid crystal device which concerns on Embodiment 1 of this invention. FIG. 6 is an explanatory diagram illustrating a method for forming a pixel electrode having a recess on the surface in the manufacturing process of the transmissive liquid crystal device according to the first embodiment of the present invention. It is explanatory drawing which shows a mode that a recessed part is formed in a recessed part formation process in the manufacturing process of the transmissive | pervious liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the method of forming the common electrode provided with the recessed part in the surface in the manufacturing process of the transmissive | pervious liquid crystal device which concerns on Embodiment 1 of this invention. It is explanatory drawing of the transmissive liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing which shows the method of forming the pixel electrode provided with the recessed part in the surface in the manufacturing process of the transmissive | pervious liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing which shows the method of forming the common electrode provided with the recessed part in the surface in the manufacturing process of the transmissive | pervious liquid crystal device which concerns on Embodiment 2 of this invention. It is explanatory drawing of the transmissive liquid crystal device which concerns on Embodiment 3 of this invention. It is explanatory drawing of the transmissive liquid crystal device which concerns on Embodiment 4 of this invention. It is explanatory drawing of the reflection-type liquid crystal device which concerns on Embodiment 6 of this invention. It is explanatory drawing of the reflection-type liquid crystal device which concerns on Embodiment 7 of this invention. It is a schematic block diagram of an example of the projection type display apparatus (electronic device) to which this invention is applied, and an optical unit.

  Embodiments of the present invention will be described below. In the drawings to be referred to in the following description, the scales are different for each layer and each member so that each layer and each member have a size that can be recognized on the drawing. Further, in the following description, “upper layer side” and “front surface side” when describing the configuration of the first substrate 10 mean the opposite side (side of the electro-optic material layer 50) from the substrate body 10w. The side means the side of the substrate body 10w (the side opposite to the electro-optical material layer 50). In the description of the configuration of the second substrate 20, “upper layer side” and “front surface side” mean the side opposite to the substrate body 20 w (side of the electro-optic material layer 50), and the lower layer side means the substrate body. It means the side of 20w (the side opposite to the electro-optic material layer 50).

[Embodiment 1 (transmission type)]
FIG. 1 is an explanatory diagram of an example of a liquid crystal panel of a transmissive liquid crystal device according to Embodiment 1 of the present invention. FIGS. 1 (a) and 1 (b) each show a liquid crystal panel together with each component as a second. It is the top view seen from the board | substrate side, and its HH 'sectional drawing.

  As shown in FIGS. 1A and 1B, the liquid crystal device 100 of this embodiment includes a liquid crystal panel 100p. In the liquid crystal panel 100p, the first substrate 10 (element substrate) and the second substrate 20 (counter substrate) are bonded to each other with a sealant 107 through a predetermined gap to constitute a cell 100e. The sealing material 107 is provided in a frame shape along the outer edge of the second substrate 20. The sealing material 107 is an adhesive made of a photocurable resin, a thermosetting resin, or the like, and is mixed with a gap material such as glass fiber or glass beads for setting the distance between the two substrates to a predetermined value. In the liquid crystal panel 100p, an electro-optical material layer 50 (liquid crystal layer) is provided in a space between the first substrate 10 and the second substrate 20 surrounded by the sealing material 107 (inside the cell 100e). Yes. The sealing material 107 is formed with one discontinuous portion used as the introduction port 107c, and the introduction port 107c is sealed with a sealing material 107d after the introduction of the electro-optical material.

  In the liquid crystal panel 100p, the first substrate 10 and the second substrate 20 are both quadrangular, and the first substrate 10 includes two side surfaces 10g and 10h that face each other in the X direction (first direction), and the Y direction (second Direction) and two side surfaces 10e and 10f that face each other. The second substrate 20 includes two side surfaces 20g and 20h that face each other in the X direction and two side surfaces 20e and 20f that face each other in the Y direction. The display area 10a is provided as a square area at the approximate center of the liquid crystal panel 100p, and the sealing material 107 is also provided in a substantially square shape corresponding to the shape. The outer side of the display area 10a is a square frame-shaped outer peripheral area 10c.

  In the first substrate 10, in the outer peripheral region 10c, a data line driving circuit 101 and a plurality of terminals 102 are formed along a side surface 10e located on one side of the first substrate 10 in the Y-axis direction. A scanning line driving circuit 104 is formed along each of the other adjacent side surfaces 10g and 10h. A flexible wiring board (not shown) is connected to the terminal 102, and various potentials and various signals are input to the first substrate 10 from an external control circuit via the flexible wiring board.

  As will be described in detail later with reference to FIG. 2, the pixel electrode 9a is disposed in the display region 10a on the side of the one surface 10s facing the second substrate 20 out of the one surface 10s and the other surface 10t of the first substrate 10. And pixel transistors (not shown) are arranged in a matrix. Therefore, the display area 10a is configured as a pixel electrode arrangement area 10p in which the pixel electrodes 9a are arranged in a matrix. In the first substrate 10, an alignment film 16 is formed on the upper layer side of the pixel electrode 9a. Of the outer peripheral area 10c outside the display area 10a on the one surface 10s side of the first substrate 10, a rectangular frame-shaped peripheral area 10b sandwiched between the display area 10a and the sealing material 107 has pixel electrodes 9a and A dummy pixel electrode 9b formed at the same time is formed.

  A common electrode 21 is formed on the side of the one surface 20 s facing the first substrate 10 out of the one surface 20 s and the other surface 20 t of the second substrate 20. The common electrode 21 is formed across the plurality of pixels 100a as substantially the entire surface of the second substrate 20 or as a plurality of strip electrodes. In this embodiment, the common electrode 21 is formed on substantially the entire surface of the second substrate 20.

  On the one surface 20 s side of the second substrate 20, a light shielding layer 29 is formed on the lower layer side of the common electrode 21, and an alignment film 26 is laminated on the upper layer side of the common electrode 21. The light shielding layer 29 is formed as a frame portion 29 a extending along the outer peripheral edge of the display area 10 a, and the display area 10 a is defined by the inner peripheral edge of the light shielding layer 29. The light shielding layer 29 is also formed as a black matrix portion 29b that overlaps an inter-pixel region sandwiched between adjacent pixel electrodes 9a. The frame portion 29 a is formed at a position overlapping the dummy pixel electrode 9 b, and the outer peripheral edge of the frame portion 29 a is at a position with a gap between the inner peripheral edge of the sealing material 107. Therefore, the frame portion 29a and the sealing material 107 do not overlap.

  In the liquid crystal panel 100p, the inter-substrate conduction electrodes 25 are formed on the four corners on the one surface 20s side of the second substrate 20 outside the sealing material 107, and the one surface 10s of the first substrate 10 is formed on the one surface 10s. On the side, inter-substrate conduction electrodes 19 are formed at positions facing the four corners of the second substrate 20 (inter-substrate conduction electrodes 25). In this embodiment, the inter-substrate conduction electrode 25 is composed of a part of the common electrode 21. A common potential Vcom is applied to the inter-substrate conduction electrode 19. An inter-substrate conducting material 19a containing conductive particles is disposed between the inter-substrate conducting electrode 19 and the inter-substrate conducting electrode 25, and the common electrode 21 of the second substrate 20 is an inter-substrate conducting electrode. 19, electrically connected to the first substrate 10 side via the inter-substrate conductive material 19a and the inter-substrate conductive electrode 25. For this reason, the common potential Vcom is applied to the common electrode 21 from the first substrate 10 side. The sealing material 107 is provided along the outer peripheral edge of the second substrate 20 with substantially the same width dimension, but in the region overlapping the corner portion of the second substrate 20, avoid the inter-substrate conduction electrodes 19, 25. It is provided to pass through.

  In this embodiment, the liquid crystal device 100 is a transmissive liquid crystal device, and the pixel electrode 9a and the common electrode 21 are formed of a light-transmitting conductive film such as an ITO (Indium Tin Oxide) film or an IZO (Indium Zinc Oxide) film. ing. In the transmissive liquid crystal device 100, light incident from the second substrate 20 side is modulated while being emitted from the first substrate 10 side, and an image is displayed. Further, in the transmissive liquid crystal device 100, there is a case where light incident from the first substrate 10 side is modulated while being emitted from the second substrate 20 side to display an image.

  Further, as described later in Embodiments 5, 6, and 7, the liquid crystal device 100 may be configured as a reflective liquid crystal device. In this case, the common electrode 21 is formed of a light-transmitting conductive film such as an ITO film or an IZO film, and the pixel electrode 9a is formed of a reflective conductive film such as an aluminum film. In the reflective liquid crystal device (liquid crystal device 100), light incident from the second substrate 20 side of the first substrate 10 and the second substrate 20 is modulated while being reflected and emitted by the first substrate 10. To display the image. In some cases, the common electrode 21 is formed of a reflective conductive film such as an aluminum film, and the pixel electrode 9a is formed of a light-transmitting conductive film such as an ITO film or an IZO film. In this case, the light incident from the first substrate 10 side is modulated while being reflected by the second substrate 20 and emitted to display an image.

  The liquid crystal device 100 can be used as, for example, a color display device of an electronic device such as a mobile computer or a mobile phone. In this case, a color filter (not shown) is formed on the second substrate 20. The liquid crystal device 100 can be used as electronic paper. Further, in the liquid crystal device 100, a polarizing film, a retardation film, a polarizing plate, and the like are predetermined with respect to the liquid crystal panel 100p according to the type of the electro-optical material layer 50 to be used and the normally white mode / normally black mode. It is arranged in the direction. Furthermore, the liquid crystal device 100 can be used as a light valve for RGB in a projection display device (liquid crystal projector) described later. In this case, each color liquid crystal device 100 for RGB receives light of each color separated through RGB color separation dichroic mirrors as projection light, so that no color filter is formed.

(Specific configuration of pixel 100p)
FIG. 2 is an explanatory diagram of an example of the pixel 100a of the transmissive liquid crystal device 100 according to Embodiment 1 of the present invention. FIGS. 2 (a) and 2 (b) illustrate a plurality of adjacent pixels on the first substrate 10. FIG. FIG. 5 is a plan view of pixels and a cross-sectional view of the liquid crystal device 100 taken along the line FF ′. In FIG. 2 (a), each layer is represented by the following lines: light shielding layer 8a on the lower layer side = thin and long broken line semiconductor layer 1a = thin and short dotted line scanning line 3a = thick solid line drain electrode 4a = thin solid line Electrode 6b = thin alternate long and short dash line Capacitance line 5a = thick alternate long and short dash line The upper light shielding layer 7a and relay electrode 7b = thin alternate long and two short dashes line Further, in FIG. 2A, the positions of the end portions of the layers in which the end portions overlap each other in plan view are shifted so that the shape of the layer can be easily understood.

  As shown in FIG. 2A, on one surface 10s of the first substrate 10 facing the second substrate 20, a pixel electrode 9a is formed on each of the plurality of pixels 100a. Data lines 6a and scanning lines 3a are formed along the inter-pixel region. In this embodiment, the inter-pixel region extends vertically and horizontally, and the scanning line 3a extends linearly along the first inter-pixel region extending in the X direction among the inter-pixel regions, and the data line 6a. Are linearly extended along the second inter-pixel region extending in the Y direction. Further, a pixel transistor 30 is formed corresponding to the intersection of the data line 6a and the scanning line 3a. In this embodiment, the pixel transistor 30 uses the intersection region of the data line 6a and the scanning line 3a and its vicinity. Is formed. A capacitance line 5a is formed on the first substrate 10, and a common potential Vcom is applied to the capacitance line 5a. In the present embodiment, the capacitor line 5a extends in a lattice shape so as to overlap the scanning line 3a and the data line 6a. A light shielding layer 7a is formed on the upper layer side of the pixel transistor 30, and the light shielding layer 7a extends so as to overlap the data line 6a. A light shielding layer 8a is formed on the lower layer side of the pixel transistor 30, and the light shielding layer 8a is an intersection between the main line portion linearly extending so as to overlap the scanning line 3a and the data line 6a and the scanning line 3a. And a sub-line portion extending so as to overlap the data line 6a.

  As shown in FIG. 2B, in the first substrate 10, a substrate surface (one surface facing the second substrate 20) on the electro-optic material layer 50 side of a translucent substrate body 10w such as a quartz substrate or a glass substrate. 10s side), the pixel electrode 9a, the pixel transistor 30 for pixel switching, the alignment film 16 and the like are formed. In the second substrate 20, a light shielding layer 29, a common electrode 21, a surface of the translucent substrate body 20 w such as a quartz substrate or a glass substrate on the electro-optic material layer 50 side (one surface 20 s facing the first substrate 10). In addition, an alignment film 26 and the like are formed.

  In the first substrate 10, a lower side light shielding layer 8 a made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film is formed on the one surface 10 s side of the substrate body 10 w. Yes. In this embodiment, the light shielding layer 8a is made of a light shielding film such as tungsten silicide (WSi), and when the light after passing through the liquid crystal device 100 is reflected by another member, the reflected light is incident on the semiconductor layer 1a. The pixel transistor 30 is prevented from malfunctioning due to photocurrent. The light shielding layer 8a may be configured as a scanning line. In this case, the gate electrode 3b described later and the light shielding layer 8a are electrically connected.

  On one surface 10s side of the substrate body 10w, a light-transmitting insulating film 12 such as a silicon oxide film is formed on the upper side of the light shielding layer 8a, and the semiconductor layer 1a is formed on the surface side of the insulating film 12. The provided pixel transistor 30 is formed. The pixel transistor 30 includes a semiconductor layer 1a having a long side direction in the extending direction of the data line 6a, and a central portion in the length direction of the semiconductor layer 1a extending in a direction orthogonal to the length direction of the semiconductor layer 1a. In this embodiment, the gate electrode 3b is composed of a part of the scanning line 3a. The pixel transistor 30 has a translucent gate insulating layer 2 between the semiconductor layer 1a and the gate electrode 3b. The semiconductor layer 1a includes a channel region 1g opposed to the gate electrode 3b via the gate insulating layer 2, and includes a source region 1b and a drain region 1c on both sides of the channel region 1g. In this embodiment, the pixel transistor 30 has an LDD structure. Therefore, each of the source region 1b and the drain region 1c includes a low concentration region on both sides of the channel region 1g, and includes a high concentration region in a region adjacent to the low concentration region on the opposite side to the channel region 1g.

  The semiconductor layer 1a is composed of a polysilicon film (polycrystalline silicon film) or the like. The gate insulating layer 2 has a two-layer structure of a first gate insulating layer 2a made of a silicon oxide film obtained by thermally oxidizing the semiconductor layer 1a and a second gate insulating layer 2b made of a silicon oxide film formed by a low pressure CVD method. Become. The gate electrode 3b and the scanning line 3a are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the gate electrode 3b has a two-layer structure of a conductive polysilicon film and a tungsten silicide film.

  A translucent interlayer insulating film 41 made of a silicon oxide film such as NSG, PSG, BSG, or BPSG is formed on the upper layer side of the gate electrode 3b, and a drain electrode 4a is formed on the upper layer of the interlayer insulating film 41. Has been. In this embodiment, the interlayer insulating film 41 is made of a silicon oxide film. The drain electrode 4a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the drain electrode 4a is made of a titanium nitride film. The drain electrode 4 a is formed so as to partially overlap the drain region 1 c (pixel electrode side source / drain region) of the semiconductor layer 1 a, and through a contact hole 41 a penetrating the interlayer insulating film 41 and the gate insulating layer 2. It is electrically connected to the drain region 1c.

  A translucent insulating film 49 made of a silicon oxide film or the like and a translucent dielectric layer 40 are formed on the upper layer side of the drain electrode 4a. The capacitive line is formed on the upper layer side of the dielectric layer 40. 5a is formed. As the dielectric layer 40, a silicon compound such as a silicon oxide film or a silicon nitride film can be used, and an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a niobium oxide film, a hafnium oxide film, a lanthanum oxide film, zirconium A dielectric layer having a high dielectric constant such as an oxide film can be used. The capacitor line 5a is made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the capacitor line 5a has a three-layer structure of a titanium nitride film, an aluminum film, and a titanium nitride film. Here, the capacitor line 5 a overlaps the drain electrode 4 a through the dielectric layer 40, and constitutes a storage capacitor 55.

  An interlayer insulating film 42 is formed on the upper layer side of the capacitor line 5a. On the upper layer side of the interlayer insulating film 42, the data line 6a and the relay electrode 6b are formed of the same conductive film. The interlayer insulating film 42 is made of a silicon oxide film. The data line 6a and the relay electrode 6b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the data line 6a and the relay electrode 6b are made of an aluminum alloy film or a laminated film of two to four layers of a titanium nitride film and an aluminum film. The data line 6a is electrically connected to the source region 1b (data line side source / drain region) through a contact hole 42a penetrating the interlayer insulating film 42, the insulating film 49, the interlayer insulating film 41 and the gate insulating layer 2. The relay electrode 6 b is electrically connected to the drain electrode 4 a through a contact hole 42 b that penetrates the interlayer insulating film 42 and the insulating film 49.

  A light-transmitting interlayer insulating film 44 made of a silicon oxide film or the like is formed on the upper side of the data line 6a and the relay electrode 6b. On the upper layer side of the interlayer insulating film 44, the light shielding layer 7a and the relay electrode 7b are formed. Are formed of the same conductive film. The interlayer insulating film 44 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas or a plasma CVD method using silane gas and nitrous oxide gas, and the surface thereof is flat. It has become. The light shielding layer 7a and the relay electrode 7b are made of a conductive film such as a conductive polysilicon film, a metal silicide film, a metal film, or a metal compound film. In this embodiment, the light shielding layer 7a and the relay electrode 7b are made of an aluminum alloy film or a laminated film of two to four layers of a titanium nitride film and an aluminum film. The relay electrode 7 b is electrically connected to the relay electrode 6 b through a contact hole 44 a that penetrates the interlayer insulating film 44. The light shielding layer 7a extends so as to overlap the data line 6a, and functions as a light shielding layer. The light shielding layer 7a may be electrically connected to the capacitor line 5a and used as a shield layer.

  A light-transmitting interlayer insulating film 45 made of a silicon oxide film or the like is formed on the upper side of the light shielding layer 7a and the relay electrode 7b, and a pixel electrode made of an ITO film or the like is formed on the upper layer side of the interlayer insulating film 45. 9a is formed. The film thickness of the pixel electrode 9a is about 140 nm. The interlayer insulating film 45 is formed with a contact hole 45a that reaches the relay electrode 7b through the interlayer insulating film 45. The pixel electrode 9a is electrically connected to the relay electrode 7b through the contact hole 45a. ing. As a result, the pixel electrode 9a is electrically connected to the drain region 1c through the relay electrode 7b, the relay electrode 6b, and the drain electrode 4a. The interlayer insulating film 45 is made of, for example, a silicon oxide film formed by a plasma CVD method using tetraethoxysilane and oxygen gas, a plasma CVD method using silane gas and nitrous oxide gas, or the like. Further, the interlayer insulating film 45 may have a structure of a lower insulating film made of NSG (non-silicate glass) and an upper insulating film made of PSG or BSG. The surface of the interlayer insulating film 45 is planarized.

An alignment film 16 made of polyimide or an inorganic alignment film is formed on the surface side of the pixel electrode 9a. In this embodiment, the alignment film 16 is formed of, for example, an oblique layer such as SiO _x (x <2), SiO ₂ , TiO ₂ , MgO, Al ₂ O ₃ , In ₂ O ₃ , Sb ₂ O ₃ , Ta ₂ O _5. It consists of a film (inorganic alignment film). Such an orthorhombic film can be formed by oblique vapor deposition or the like.

(Configuration of the second substrate 20)
In the second substrate 20, on the surface of the substrate body 20w on the electro-optic material layer 50 side (one surface 20s facing the first substrate 10), a light shielding layer 29, an insulating film 24 made of a silicon oxide film, an ITO film, etc. A common electrode 21 made of a translucent conductive film is formed, and an alignment film 26 made of polyimide or an inorganic alignment film is formed so as to cover the common electrode 21. In this embodiment, the common electrode 21 is made of an ITO film and has a thickness of about 140 nm. The alignment film 26, similarly to the alignment film 16, for _{example, SiO X (x <2)} , SiO 2, TiO 2, MgO, Al 2 O 3, In 2 O 3, Sb 2 O 3, Ta 2 O 5 , etc. It consists of an orthorhombic film (inorganic alignment film). The alignment films 16 and 26 tilt and vertically align the nematic liquid crystal compound having negative dielectric anisotropy used for the electro-optic material layer 50, and the liquid crystal panel 100p operates as a normally black VA mode.

(Configuration of alignment films 16, 26, etc.)
FIG. 3 is an explanatory diagram of the alignment films 16 and 26 of the transmissive liquid crystal device 100 according to the first embodiment of the present invention. In FIG. 3, illustration of layers formed on the lower layer side of the interlayer insulating film 45 in the first substrate 10 is omitted, and illustration of layers formed on the lower layer side of the insulating film 24 in the second substrate 20 is omitted. It is.

As shown in FIG. 3, in the liquid crystal panel 100p of the liquid crystal device 100 of the present embodiment, the alignment films 16 and 26 are formed of rhombic films (inorganic alignment films) deposited from the same direction and have a column structure. Yes. The alignment films 16 and 26 are made of, for example, a silicon oxide film (SiO _x ) having a thickness of about 35 nm. Here, on the surfaces 16s and 26s (surfaces on the liquid crystal layer 50 side) of the alignment films 16 and 26, irregularities having a nano-order size are formed, and the size is equal to the size of the liquid crystal molecules. Accordingly, a pretilt is imparted to the liquid crystal molecules 50a by the unevenness of the surfaces 16s and 26s of the alignment films 16 and 26. The tilt in the pretilt is represented by the pretilt angle θp formed by the normal to the one surface 10s, 20s of the first substrate 10 and the second substrate 20 and the major axis of the liquid crystal molecules 50a.

  In this embodiment, when the unevenness is given to the surface 16s of the alignment film 16, a plurality of recesses 9e are formed in a dispersed manner on the surface 9s (surface on the liquid crystal layer 50 side) of the pixel electrode 9a. 9e is reflected on the surface 16s of the alignment film 16 as a plurality of recesses 16e having a nano-order size.

  In addition, when the unevenness is given to the surface 26s of the alignment film 26, a plurality of concave portions 21e are formed on the surface 21s (the surface on the liquid crystal layer 50 side) of the common electrode 21, and the concave portions 21e are aligned. The surface 26a of the film 26 is reflected as a plurality of recesses 26e having a nano-order size.

(Manufacturing method of the liquid crystal device 100)
FIG. 4 is an explanatory view showing a method of forming the pixel electrode 9a having the recess 9e on the surface in the manufacturing process of the transmissive liquid crystal device 100 according to the first embodiment of the present invention. (B) is explanatory drawing of a film formation process, and explanatory drawing of a recessed part formation process. FIG. 5 is an explanatory diagram showing how the recess 9e is formed in the recess forming step in the manufacturing process of the transmissive liquid crystal device 100 according to Embodiment 1 of the present invention. () Is an explanatory view showing a state before the concave portion forming step on the surface of the conductive film for pixel electrode formation, and an explanatory view showing a state after the concave portion forming step. FIG. 6 is an explanatory view showing a method of forming the common electrode 21 having the recess 21e on the surface in the manufacturing process of the transmissive liquid crystal device 100 according to Embodiment 1 of the present invention. (B) is explanatory drawing of a film formation process, and explanatory drawing of a recessed part formation process. The steps described below are performed using a mother substrate larger than the first substrate 10 and a mother substrate larger than the second substrate 20, but in the following description, the first substrate 10 and the mother substrate are also described. The second substrate 20 will be described.

  In the manufacturing process of the first substrate 10 used in the liquid crystal device 100 of the present embodiment, as shown in FIG. 4A, after the interlayer insulating film 45 is formed on the one surface 10s side of the first substrate 10, the interlayer insulating film 45 is formed. A contact hole 45a is formed.

  Next, in the film forming process (electrode forming process), the inside of the vacuum chamber 210 containing the first substrate 10 in the substrate processing apparatus 200 is set to a vacuum atmosphere, and the pixel electrode is formed on the surface of the interlayer insulating film 45 by a dry process. A conductive film 9 for forming 9a is formed. In this embodiment, the conductive film 9 made of an ITO film having a thickness of about 140 nm is formed by sputtering film formation in the film formation step. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the target 240 made of ITO to generate plasma, and accelerated argon ions collide with the target 240. As a result, ITO particles (sputter particles) jumping out from the target 240 are deposited on the first substrate 10. Either DC sputtering or RF sputtering may be used for the sputtering film formation, and the voltage applied to the substrate is about −several thousand volts, for example, −3000V. As the sputtering gas, a rare gas such as krypton gas or xenon gas may be used instead of argon gas.

  Next, in the recess forming step shown in FIG. 4B, the first substrate 10 is not taken out from the vacuum chamber 210 of the substrate processing apparatus 200 that has performed the film forming step shown in FIG. Then, dry etching without an etching mask is performed on the surface 9 s of the conductive film 9 to form a plurality of recesses 9 e dispersed on the surface 9 s of the conductive film 9. In this embodiment, the recess 9e is formed on the surface 9s of the conductive film 9 of the first substrate 10 by sputter etching. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the first substrate 10 to generate plasma, and accelerated argon ions collide with the first substrate 10 side. As a result, ITO particles pop out from the surface 9s of the conductive film 9, so that the recess 9e can be formed in the surface 9s of the conductive film 9. In this case, since the first substrate 10 is an insulating substrate, an RF sputtering method for applying a high frequency or a sputtering method using a pulse is employed. The applied voltage to the substrate at that time is −100 V to −1000 V, for example, −100 V to −500 V, and the processing time is 1 minute to 30 minutes, for example, about several minutes. As the sputtering gas, a rare gas such as krypton gas or xenon gas may be used instead of argon gas. In this embodiment, the film forming step and the concave portion forming step are continuously performed while the vacuum chamber 210 is not opened to the atmosphere and the vacuum chamber 210 is kept in a vacuum state. In the recess forming process, the target 240 used in the film forming process may be placed in the vacuum chamber 210 as it is.

  Here, on the surface of the ITO film formed as the conductive film 9, as shown in FIG. 5A, recessed portions 9f of several tens to several hundreds of nanometers are dispersed and formed along the crystal grain boundaries and the like. Yes. Further, when sputter etching is performed on the surface of the conductive film 9 (ITO film), the atomic radius of argon ions is as very small as 0.098 nm, so that minute fragments on the surface of the ITO film are removed. Therefore, as shown in FIG. 5B, the recess 9f shown in FIG. 5A grows along the crystal grain boundary of the ITO film, and becomes a recess 9e that is deeper and wider than the recess 9f. Note that the crystal grain size in the ITO film is several tens to several hundreds nm, and the crystal grains may be grown by performing a heat treatment in the vacuum chamber 210 after the film forming step.

  Next, in the patterning step, the conductive film 9 is etched with a resist mask formed on the surface 9s of the conductive film 9, thereby forming the pixel electrode 9a. At that time, before forming the resist mask, a cleaning process for cleaning the surface 9s of the conductive film 9 is performed. For this reason, foreign matter generated by sputter etching can be removed from the surface 9 s of the conductive film 9. Such a cleaning process may be any of a cleaning process using a cleaning liquid and a cleaning process using dry etching.

  Thereafter, as shown in FIG. 3, in the alignment film forming step, silicon oxide or the like is obliquely vapor-deposited to form an alignment film 16 made of an oblique film. In the alignment film 16 configured in this manner, the lower-layer-side recesses 9e are reflected on the surface 16s, so that the dispersed recesses 16e are formed on the surface 16s of the alignment film 16.

  On the other hand, in the manufacturing process of the second substrate 20 used in the liquid crystal device 100 of the present embodiment, the insulating film 24 is formed on the one surface 20s side of the second substrate 20 as shown in FIG. Next, in the film forming process (electrode forming process), the inside of the vacuum chamber 210 containing the second substrate 20 in the substrate processing apparatus 200 is set in a vacuum atmosphere, and the surface of the insulating film 24 is formed from the ITO film by a dry process. The common electrode 21 is formed. In this embodiment, the vacuum chamber 210 is the same vacuum chamber as the vacuum chamber used in the film formation process or the recess formation process of the first substrate 10. In this embodiment, the common electrode 21 made of an ITO film having a film thickness of about 140 nm is formed by sputtering film formation in the film formation step. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the target 240 made of ITO to generate plasma, and accelerated argon ions collide with the target 240. As a result, ITO particles (sputtered particles) jumping out from the target 240 are deposited on the second substrate 20. Either DC sputtering or RF sputtering may be used for the sputtering film formation.

  Next, in the recess forming step shown in FIG. 6B, the second substrate 20 is not taken out from the vacuum chamber 210 in which the film forming step shown in FIG. Dry etching without an etching mask is performed on the surface 21s to form a plurality of recesses 21e dispersed on the surface 21s of the common electrode 21. In this embodiment, the recess 21e is formed on the surface 21s of the common electrode 21 of the second substrate 20 by sputter etching. More specifically, while introducing argon gas into the vacuum chamber 210 and applying a voltage to the second substrate 20 to generate plasma, the accelerated argon ions collide with the second substrate 20 side. As a result, ITO particles pop out from the surface 21 s of the common electrode 21, so that the recess 21 e can be formed in the surface 21 s of the common electrode 21 as in the case of the conductive film 9. In this case, since the first substrate 20 is an insulating substrate, an RF sputtering method for applying a high frequency or a sputtering method using a pulse is employed. In this embodiment, the film forming step and the concave portion forming step are continuously performed while the vacuum chamber 210 is not opened to the atmosphere and the vacuum chamber 210 is kept in a vacuum state. In the recess forming process, the target 240 used in the film forming process may be placed in the vacuum chamber 210 as it is.

  In addition, after the recessed portion forming step, a cleaning step for cleaning the surface 9s of the common electrode 21 is performed. For this reason, foreign matter generated by sputter etching can be removed from the surface 21 s of the common electrode 21. Such a cleaning process may be any of a cleaning process using a cleaning liquid and a cleaning process using dry etching.

  Thereafter, as shown in FIG. 3, in the alignment film forming step, silicon oxide or the like is obliquely deposited to form an alignment film 26 made of an oblique film. In the alignment film 26 configured as described above, since the lower-side recesses 21e are reflected on the surface 26s, the dispersed recesses 26e are formed on the surface 26s of the alignment film 26.

  Then, as shown in FIG. 1, after the first substrate 10 and the second substrate 20 are bonded to each other with the sealing material 107 to form the cell 100e, a liquid crystal material is injected into the cell 100e, and then the introduction port 107c is formed. It is closed with a sealing material 107d. As a result, the liquid crystal panel 100p is completed. In the liquid crystal panel 100p, as described with reference to FIG. 3, the liquid crystal material 50a is pretilted by the recesses 16e and 26e formed on the surfaces 16s and 26s of the alignment films 16 and 26.

(Main effects of this form)
As described above, in the method of manufacturing the liquid crystal device 100 according to this embodiment, when manufacturing the first substrate 10 (liquid crystal device substrate), the pixel electrode is formed by the dry process in the film forming process shown in FIG. After the conductive film 9 is formed, in the recess forming step shown in FIG. 4B, dry etching without an etching mask is performed on the surface 9s of the conductive film 9 to form the recess 9e. Further, when the second substrate 20 (liquid crystal device substrate) is manufactured, the common electrode 21 is formed by a dry process in the film forming process shown in FIG. 6A as in the case of manufacturing the first substrate 10. Thereafter, in the recess forming step shown in FIG. 6B, dry etching without an etching mask is performed on the surface 21s of the common electrode 21 to form the recess 21e. Accordingly, when oblique deposition is performed on the surfaces 16s and 26s of the pixel electrode 9a and the common electrode 21 in the alignment film forming step, the alignment films 16 and 26 in which the concave portions 9e and 21e are reflected on the surfaces 16s and 26s are formed. . Therefore, a pretilt can be imparted to the liquid crystal molecules 50a by the alignment films 16 and 26 made of an orthorhombic film.

  In this embodiment, since the film forming step and the concave portion forming step are performed by a dry process, the film forming step and the concave portion forming step can be performed in the same vacuum chamber 210. Further, in this embodiment, the first substrate 10 and the second substrate 20 are not taken out from the vacuum chamber 210, and the film forming step and the concave portion forming step are continuously performed, and the inside of the vacuum chamber 210 is not opened to the atmosphere. For this reason, the time required for transporting the substrate can be reduced, and the time required for evacuating the vacuum chamber 210 can be shortened. Therefore, the productivity of the liquid crystal device 100 can be increased.

  Further, in the film forming process, a film (conductive film 9 and common electrode 21) is formed by sputtering film formation that causes accelerated ions to collide with the target 240, and in the concave part forming process, the concave parts are formed by sputter etching that causes accelerated ions to collide with the substrate side. 9e and 21e are formed. Therefore, both the film forming step and the concave portion forming step can be performed by one sputtering apparatus.

[Embodiment 2 (transmission type)]
In the first embodiment, the recesses 9e and 21e formed on the surfaces 9s and 21s of the pixel electrode 9a and the common electrode 21 are reflected on the surfaces 16s and 26s of the alignment films 16 and 26, respectively. On the other hand, in this embodiment, as described below with reference to FIGS. 7, 8, and 9, it is formed on the surface 45s of the interlayer insulating film 45 formed on the lower layer side of the pixel electrode 9a. The recesses 45e and the recesses 24e formed on the surface 24s of the insulating film 24 formed on the lower layer side of the common electrode 21 are reflected on the surfaces of the alignment films 16 and 26 as the recesses 16e and 26e with nano-order sizes, respectively. Has been.

(Configuration of alignment films 16, 26, etc.)
FIG. 7 is an explanatory diagram of a transmissive liquid crystal device 100 according to Embodiment 2 of the present invention. FIGS. 7A and 7B are explanatory diagrams showing the configuration of the alignment films 16, 26, and the like. It is explanatory drawing of the recessed part 16e of the alignment film 16. In FIG. 7A, illustration of layers formed on the lower side of the interlayer insulating film 45 in the first substrate 10 is omitted, and illustration of layers formed on the lower side of the insulating film 24 in the second substrate 20 is omitted. Is omitted. Further, both the present embodiment and the later-described embodiment have the same basic configuration as that of the first embodiment. Accordingly, in the following description, common portions are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 7, in the liquid crystal panel 100p of the liquid crystal device 100 of the present embodiment, the alignment films 16 and 26 are formed from an orthorhombic film (inorganic alignment film) deposited from the same direction as in the first embodiment. And has a column structure. Concavities and convexities are formed on the surfaces 16s and 26s (surfaces on the liquid crystal layer 50 side) of the alignment films 16 and 26, and the concavities and convexities on the surfaces 16s and 26s of the alignment films 16 and 26 impart a pretilt to the liquid crystal molecules 50a. .

  In this embodiment, when the unevenness is provided on the surface 16s of the alignment film 16, a plurality of recesses 45e are formed dispersed on the surface 45s (surface on the liquid crystal layer 50 side) of the interlayer insulating film 45, and the plurality of recesses 45e. Is reflected as a plurality of recesses 9e on the surface 45s of the pixel electrode 9a. In addition, a plurality of recesses 9e of the pixel electrode 9a are reflected on the surface 16s of the alignment film 16 as a plurality of recesses 16e.

  In this embodiment, when the surface 26s of the alignment film 26 is provided with unevenness, a plurality of recesses 24e are formed on the surface 24s (surface on the liquid crystal layer 50 side) of the insulating film 24 in a dispersed manner. 24e is reflected on the surface 21s of the common electrode 21 as a plurality of recesses 21e. Further, the plurality of recesses 21e of the common electrode 21 are reflected on the surface 26s of the alignment film 26 as a plurality of recesses 26e.

(Manufacturing method of the liquid crystal device 100)
FIG. 8 is an explanatory view showing a method of forming the pixel electrode 9a having the recess 9e on the surface in the manufacturing process of the transmissive liquid crystal device 100 according to the second embodiment of the present invention. (B) is explanatory drawing of a recessed part formation process, and explanatory drawing of a film formation process. FIG. 9 is an explanatory diagram showing a method of forming the common electrode 21 having the recess 21e on the surface in the manufacturing process of the transmissive liquid crystal device 100 according to the second embodiment of the present invention. (B) is explanatory drawing of a recessed part formation process, and explanatory drawing of a film formation process.

  In the manufacturing process of the first substrate 10 used in the liquid crystal device 100 of the present embodiment, as shown in FIG. 8A, after the interlayer insulating film 45 is formed on the one surface 10s side of the first substrate 10 (insulating film forming process). ), A contact hole 45a is formed in the interlayer insulating film 45 (contact hole forming step).

  Next, in the recess forming step, the inside of the vacuum chamber 210 containing the first substrate 10 in the substrate processing apparatus 200 is set in a vacuum atmosphere, and dry etching without an etching mask is performed on the surface 45 s of the interlayer insulating film 45 to form an interlayer. A plurality of recesses 45e dispersed on the surface 45s of the insulating film 45 are formed. In this embodiment, the recess 45e is formed in the surface 45s of the interlayer insulating film 45 of the first substrate 10 by sputter etching. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the first substrate 10 to generate plasma, and accelerated argon ions collide with the first substrate 10 side. As a result, silicon oxide particles pop out from the surface 45 s of the interlayer insulating film 45, so that the recess 45 e can be formed in the surface 45 s of the interlayer insulating film 45. In this case, an RF sputtering method for applying a high frequency or a sputtering method using a pulse is employed. As the sputtering gas, a rare gas such as krypton gas or xenon gas may be used instead of argon gas.

  Next, in the film forming step shown in FIG. 8B, the first substrate 10 is not taken out from the vacuum chamber 210 in which the concave portion forming step shown in FIG. A conductive film 9 for forming the pixel electrode 9a is formed. In this embodiment, the conductive film 9 made of an ITO film having a thickness of about 140 nm is formed by sputtering film formation. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the target 240 made of ITO to generate plasma, and accelerated argon ions collide with the target 240. As a result, ITO particles jumping out from the target 240 are deposited on the first substrate 10. Either DC sputtering or RF sputtering may be used for the sputtering film formation. As the sputtering gas, a rare gas such as krypton gas or xenon gas may be used instead of argon gas. In the conductive film 9 configured as described above, the concave portion 45e on the lower layer side is reflected on the surface 9s, so that the concave portion 9e is formed on the surface 9s of the conductive film 9. In this embodiment, the film forming step and the concave portion forming step are continuously performed while the vacuum chamber 210 is not opened to the atmosphere and the vacuum chamber 210 is kept in a vacuum state.

  Next, in the patterning step, the conductive film 9 is etched with a resist mask formed on the surface 9s of the conductive film 9, thereby forming the pixel electrode 9a.

  Thereafter, as shown in FIG. 7A, in the alignment film forming step, silicon oxide is obliquely deposited to form an alignment film 16 made of an oblique film. In the alignment film 16 configured as described above, since the lower-side concave portion 9e is reflected on the surface 16s, the concave portion 16e is formed on the surface 16s.

  On the other hand, in the manufacturing process of the second substrate 20 used in the liquid crystal device 100 of the present embodiment, the insulating film 24 is formed on the one surface 20s side of the second substrate 20 as shown in FIG. Next, in the recess forming step, the inside of the vacuum chamber 210 containing the second substrate 20 in the substrate processing apparatus 200 is set in a vacuum atmosphere, and dry etching without an etching mask is performed on the surface 24 s of the interlayer insulating film 24 to thereby prevent interlayer insulation. Concave portions 24e dispersed on the surface 24s of the film 24 are formed. In this embodiment, the recess 24e is formed on the surface 24s of the interlayer insulating film 24 of the second substrate 20 by sputter etching. More specifically, while introducing argon gas into the vacuum chamber 210 and applying a voltage to the second substrate 20 to generate plasma, the accelerated argon ions collide with the second substrate 20 side. As a result, silicon oxide particles pop out from the surface 24 s of the insulating film 24, so that the recess 24 e can be formed in the surface 24 s of the insulating film 24. In this case, an RF sputtering method for applying a high frequency or a sputtering method using a pulse is employed.

  Next, in the film forming step shown in FIG. 9B, the second substrate 20 is not taken out from the vacuum chamber 210 in which the concave portion forming step shown in FIG. The common electrode 21 is formed. In this embodiment, the common electrode 21 made of an ITO film having a thickness of about 140 nm is formed by sputtering film formation. More specifically, while introducing argon gas into the vacuum chamber 210, a voltage is applied to the target 240 made of ITO to generate plasma, and accelerated argon ions collide with the target 240. As a result, ITO particles jumping out from the target 240 are deposited on the second substrate 20. In this case, either DC sputtering or RF sputtering may be employed. In the common electrode 21 configured as described above, since the lower-side recess 24e is reflected on the surface 21s, the recess 21e is formed on the surface 21s. In this embodiment, the film forming step and the concave portion forming step are continuously performed while the vacuum chamber 210 is not opened to the atmosphere and the vacuum chamber 210 is kept in a vacuum state.

  Thereafter, as shown in FIG. 7A, in the alignment film forming step, silicon oxide is obliquely vapor-deposited to form an alignment film 26 made of an oblique film. In the alignment film 26 configured as described above, since the lower-side recesses 21e are reflected on the surface 26s, the recesses 26e are formed dispersed on the surface 26s.

  Then, after the first substrate 10 and the second substrate 20 are bonded together with the sealing material 107 to form the cell 100e, a liquid crystal material is injected into the cell 100e, and then the inlet 107c is closed with the sealing material 107d. The liquid crystal panel 100p is completed. In the liquid crystal panel 100p, as described with reference to FIG. 7, the liquid crystal material 50a is pretilted by the recesses 16e and 26e formed on the surfaces 16s and 26s of the alignment films 16 and 26.

(Main effects of this form)
As described above, in the method of manufacturing the liquid crystal device 100 according to the present embodiment, when manufacturing the first substrate 10 (liquid crystal device substrate), the surface 45s of the interlayer insulating film 45 is formed in the recess forming step shown in FIG. Then, dry etching without an etching mask is performed to form a recess 45e. In the film forming process shown in FIG. 8B, the conductive film 9 is formed by a dry process. As a result, a recess 9e reflecting the recess 45e on the lower layer side is formed on the surface 9s of the conductive film 9. Further, when manufacturing the second substrate 20 (liquid crystal device substrate), the recess 24e is formed by performing dry etching without an etching mask on the surface 24s of the insulating film 24 in the recess forming step shown in FIG. 9A. In the film forming step shown in FIG. 9B, the common electrode 21 is formed by a dry process. As a result, a recess 21e reflecting the recess 24e on the lower layer side is formed on the surface 21s of the common electrode 21. Accordingly, when an inorganic alignment film made of an orthorhombic film is formed in the alignment film forming step, the alignment films 16 and 26 in which the concave portions 16e and 26e are reflected on the surfaces 16s and 26s are formed. Therefore, a pretilt can be imparted to the liquid crystal molecules 50a by using an orthorhombic alignment film without using the special alignment films 16 and 26.

  In this embodiment, since the film forming step and the concave portion forming step are performed by a dry process, the film forming step and the concave portion forming step can be performed in the same vacuum chamber 210. Further, in this embodiment, the first substrate 10 and the second substrate 20 are not taken out from the vacuum chamber 210, and the film forming step and the concave portion forming step are continuously performed, and the inside of the vacuum chamber 210 is not opened to the atmosphere. For this reason, the time required for transporting the substrate can be reduced, and the time required for evacuating the vacuum chamber 210 can be shortened. Therefore, the productivity of the liquid crystal device 100 can be increased.

  Further, in the film forming process, a film (conductive film 9 and common electrode 21) is formed by sputter film formation that causes accelerated ions to collide with the target 240, and in the concave part forming process, the concave parts are formed by sputter etching that causes accelerated ions to collide with the substrate side. 9e and 21e are formed. Therefore, both the film forming step and the concave portion forming step can be performed by one sputtering apparatus.

  Furthermore, when forming the first substrate 10, after forming the contact hole 45 a in the interlayer insulating film 45, in the recess forming step, dry etching without an etching mask is performed to form the recess 45 e in the surface 45 s of the interlayer insulating film 45. To do. Therefore, foreign matter can be removed from the contact hole 45a by dry etching, so that the pixel electrode 9a and the relay electrode 6b can be reliably electrically connected.

[Embodiment 3 (transmission type)]
FIG. 10 is an explanatory diagram of a transmissive liquid crystal device 100 according to Embodiment 3 of the present invention. In the first and second embodiments, the alignment film 16 is directly formed on the surface 9s of the pixel electrode 9a, and the alignment film 26 is directly formed on the surface 21s of the common electrode 21. On the other hand, in this embodiment, as shown in FIG. 10, a single-layer or multiple-layer translucent insulating film 17 constituting a protective film, an antireflection film, or the like is formed on the surface 9s of the pixel electrode 9a. The alignment film 16 is formed on the surface 17 s of the insulating film 17. Here, since the pixel electrode 9a is formed through the film forming process and the recess forming process described in the first embodiment, a recess 9e is formed on the surface 9s of the pixel electrode 9a. Therefore, a recess 17e reflecting the recess 9e is formed on the surface 17s of the insulating film 17, and a recess 16e reflecting the recess 17e is formed on the surface 16s of the alignment film 16.

  In addition, a single-layer or multiple-layer translucent insulating film 27 constituting a protective film, an antireflection film, or the like is formed on the surface 21 s of the common electrode 21, and the alignment film 26 is formed on the surface 27 s of the insulating film 27. Is formed. Here, since the common electrode 21 is formed through the film forming step and the concave portion forming step described in the first embodiment, a concave portion 21e is formed on the surface 21s of the common electrode 21. Therefore, a recess 27e reflecting the recess 21e is formed on the surface 27s of the insulating film 27, and a recess 26e reflecting the recess 27e is formed on the surface 26s of the alignment film 26.

  Therefore, the unevenness of the surfaces 16s and 26s of the alignment films 16 and 26 gives a pretilt to the liquid crystal molecules 50a.

[Embodiment 4 (transmission type)]
FIG. 11 is an explanatory diagram of a transmissive liquid crystal device 100 according to Embodiment 4 of the present invention. In the first, second, and third embodiments, the recess 9e is formed on the surface 9s of the pixel electrode 9a, and the recess 21e is formed on the surface 21s of the common electrode 21. On the other hand, in this embodiment, as shown in FIG. 11, the recess 9e is not formed on the surface 9s of the pixel electrode 9a, and the recess 21e is not formed on the surface 21s of the common electrode 21.

  In the present embodiment, one or a plurality of light-transmitting insulating films 17 constituting a protective film, an antireflection film, or the like are formed on the surface 9s of the pixel electrode 9a, and the surface is aligned on the surface 17s of the insulating film 17. A film 16 is formed. Here, the insulating film 17 is formed through a process similar to the film forming process and the recessed part forming process described in the first embodiment, and a recessed part 17 e is formed on the surface 17 s of the insulating film 17. Therefore, a recess 16e reflecting the recess 17e is formed on the surface 16s of the alignment film 16.

  In addition, a single-layer or multiple-layer translucent insulating film 27 constituting a protective film, an antireflection film, or the like is formed on the surface 21s of the common electrode 21, and the alignment film 26 is formed on the surface 27s of the insulating film 27. Is formed. Here, the insulating film 27 is formed through a process similar to the film forming process and the recessed part forming process described in the first embodiment, and a recessed part 27 e is formed on the surface 27 s of the insulating film 27. Accordingly, a recess 26e reflecting the recess 27e is formed on the surface 26s of the alignment film 26.

  Therefore, the unevenness of the surfaces 16s and 26s of the alignment films 16 and 26 gives a pretilt to the liquid crystal molecules 50a.

[Embodiment 5 (reflection type)]
In the first to fourth embodiments, the liquid crystal device 100 is a transmissive liquid crystal device. For example, one of the pixel electrode 9a and the common electrode 21 is formed of a reflective conductive film, and the other is formed of a translucent conductive film. By configuring, the reflective liquid crystal device 100 may be configured.

  When the pixel electrode 9a is formed of a reflective conductive film and the common electrode 21 is formed of a light-transmitting conductive film, the insulating film 17 used in the third and fourth embodiments is configured as a protective film, a reflective reflection film, or the like. The insulating film 27 is configured as a protective film or an antireflection film. On the other hand, when the pixel electrode 9a is made of a light-transmitting conductive film and the common electrode 21 is made of a reflective conductive film, the insulating film 17 used in the third and fourth embodiments is a protective film or antireflection film. The insulating film 27 is configured as a protective film or an increased reflection film.

  Of these forms, when the reflective liquid crystal device 100 is configured with the configuration described in the fourth embodiment, the surface 9s of the pixel electrode 9a and the surface 21s of the common electrode 21 are flat surfaces. For this reason, even when any of the pixel electrode 9a and the common electrode 21 is formed of a reflective conductive film, there is an advantage that light scattering at the reflective electrode can be prevented.

[Embodiment 6 (reflection type)]
In the first to fifth embodiments, the periphery of the alignment films 16 and 26 is the same in the first substrate 10 and the second substrate 20, but in the sixth and seventh embodiments described below, In the first substrate 10 and the second substrate 20, the periphery of the alignment films 16 and 26 has a different configuration.

  FIG. 12 is an explanatory diagram of a reflective liquid crystal device 100 according to Embodiment 6 of the present invention, and FIGS. 12A and 12B are explanatory diagrams when the pixel electrode 9a is made of a reflective conductive film. FIG. 5 is an explanatory diagram when the common electrode 21 is made of a reflective conductive film.

  In the reflective liquid crystal device 100 shown in FIG. 12A, the pixel electrode 9a is made of a reflective conductive film, and the common electrode 21 is made of a translucent conductive film. For this reason, as indicated by the arrow L1, the light incident from the second substrate 20 side is modulated while being reflected by the pixel electrode 9a of the first substrate 10 and emitted to display an image.

  In the liquid crystal device 100 configured as described above, in the second substrate 20, the recess 21 e formed on the surface 21 s of the common electrode 21 is reflected as the recess 26 e on the surface 26 s of the alignment film 26. The common electrode 21 having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment.

  On the other hand, in the first substrate 10, one or a plurality of light-transmitting insulating films 17 constituting a protective film, an increasing reflection film, and the like are formed on the surface 9 s of the pixel electrode 9 a, so Concave portions 17e are formed on the surface 17s of the film 17 in a dispersed manner. Therefore, a recess 16e reflecting the recess 17e is formed on the surface 16s of the alignment film 16. The insulating film 17 having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment.

  Even in such a configuration, a pretilt can be imparted to the liquid crystal molecules 50a. Further, since the surface 9s of the pixel electrode 9a made of a reflective conductive film is flat, light scattering at the reflective electrode can be prevented.

  In the reflective liquid crystal device 100 shown in FIG. 12B, the pixel electrode 9a is made of a translucent conductive film, and the common electrode 21 is made of a reflective conductive film. For this reason, as indicated by the arrow L2, the light incident from the first substrate 10 is modulated while being reflected by the common electrode 21 of the second substrate 20 and emitted to display an image.

  In the liquid crystal device 100 configured as described above, in the first substrate 10, the recess 9e formed on the surface 9s of the pixel electrode 9a is reflected as the recess 16e on the surface 16s of the alignment film 16. The pixel electrode 9a having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment.

  On the other hand, in the second substrate 20, one or a plurality of light-transmitting insulating films 27 that form a protective film, an increased reflection film, and the like are formed on the surface 21 s of the common electrode 21. Concave portions 27e are dispersedly formed on the surface 27s of the film 27. Accordingly, a recess 26e reflecting the recess 27e is formed on the surface 26s of the alignment film 26. The insulating film 27 having such a structure is formed by the film forming process and the recess forming process described in the above embodiment.

  Even in such a configuration, a pretilt can be imparted to the liquid crystal molecules 50a. Moreover, since the surface 21s of the common electrode 21 made of a reflective conductive film is flat, light scattering at the reflective electrode can be prevented.

[Embodiment 7 (reflection type)]
FIG. 13 is an explanatory diagram of a reflective liquid crystal device 100 according to Embodiment 7 of the present invention. FIGS. 13A and 13B are explanatory diagrams when the pixel electrode 9a is made of a reflective conductive film. FIG. 5 is an explanatory diagram when the common electrode 21 is made of a reflective conductive film.

  In the reflective liquid crystal device 100 shown in FIG. 13A, the pixel electrode 9a is made of a reflective conductive film, and the common electrode 21 is made of a translucent conductive film. For this reason, as indicated by the arrow L1, the light incident from the second substrate 20 side is modulated while being reflected by the pixel electrode 9a of the first substrate 10 and emitted to display an image.

  In the liquid crystal device 100 configured as described above, the first substrate 10 is formed with one or a plurality of light-transmitting insulating films 17 constituting a protective film, a reflective reflection film, and the like on the surface 9s of the pixel electrode 9a. In addition, the concave portions 17e are dispersedly formed on the surface 17s of the insulating film 17. Therefore, a recess 16e reflecting the recess 17e is formed on the surface 16s of the alignment film 16. For this reason, since the surface 9s of the pixel electrode 9a made of the reflective conductive film is flat, light scattering at the reflective electrode can be prevented. The insulating film 17 having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment.

  On the other hand, in the second substrate 20, the recess 21 e formed on the surface 21 s of the common electrode 21 is reflected as the recess 26 e on the surface 26 s of the alignment film 26. The common electrode 21 having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment. Here, a translucent insulating film 22 is formed between the common electrode 21 and the insulating film 24 so as to be in contact with the common electrode 21. A conductive translucent film 23 made of ITO or the like is formed between the insulating film 22 and the insulating film 24. Therefore, the conductive translucent film 23, the insulating film 22, and the common electrode 21 constitute a dielectric multilayer film, and the conductive translucent film 23, the insulating film 22, and the common electrode 21 are formed on the second substrate. The film thickness is set so as to mitigate interference between incident light and outgoing light at 20. For this reason, generation | occurrence | production of the striped pattern by interference, etc. can be relieved.

  In the reflective liquid crystal device 100 shown in FIG. 13B, the common electrode 21 is made of a reflective conductive film, and the pixel electrode 9a is made of a translucent conductive film. For this reason, as indicated by the arrow L2, the light incident from the first substrate 10 is modulated while being reflected by the common electrode 21 of the second substrate 20 and emitted to display an image.

  In the liquid crystal device 100 configured as described above, the second substrate 20 is formed with one or a plurality of light-transmitting insulating films 27 constituting a protective film, a reflection-enhancing film, and the like on the surface 21s of the common electrode 21. In addition, the concave portions 27e are formed on the surface 27s of the insulating film 27 in a dispersed manner. Accordingly, a recess 26e reflecting the recess 27e is formed on the surface 26s of the alignment film 26. For this reason, since the surface 21s of the common electrode 21 made of a reflective conductive film is flat, light scattering at the reflective electrode can be prevented. The insulating film 27 having such a structure is formed by the film forming process and the recess forming process described in the above embodiment.

  On the other hand, in the first substrate 10, the recess 9 e formed on the surface 9 s of the pixel electrode 9 a is reflected as the recess 16 e on the surface 16 s of the alignment film 16. The pixel electrode 9a having such a configuration is formed by the film forming process and the recess forming process described in the above embodiment. Here, a translucent insulating film 15 is formed between the pixel electrode 9a and the interlayer insulating film 45 so as to be in contact with the pixel electrode 9a. In addition, a translucent conductive film 13 a made of ITO or the like is formed between the insulating film 15 and the interlayer insulating film 45. Therefore, the translucent conductive film 13a, the insulating film 15, and the pixel electrode 9a constitute a dielectric multilayer film, and the translucent conductive film 13a, the insulating film 15, and the pixel electrode 9a are formed on the first substrate 10. The film thickness is set so as to mitigate interference between incident light and outgoing light. For this reason, generation | occurrence | production of the striped pattern by interference, etc. can be relieved. The translucent conductive film 13a has a configuration formed only in a region overlapping with the pixel electrode 9a, a configuration formed on substantially the entire surface avoiding the contact hole 45a (see FIG. 2B), and the like. Can be adopted.

[Other embodiments]
In the above embodiment, the sputter film formation is adopted as the film formation process by the dry process, but the film formation may be performed by vapor deposition.

  In the above embodiment, sputter etching is employed as the recess forming step by dry etching, but ion milling, plasma etching, ion etching, or the like may be employed.

  In the above embodiment, the film forming step and the concave portion forming step are performed continuously. However, if the same vacuum chamber 210 is used, the substrate is removed from the vacuum chamber 210 between the film forming step and the concave portion forming step. May be put out. According to this configuration, even if the film forming process is performed after the recess forming process as in the second embodiment, the cleaning process for cleaning one side of the substrate is performed after the recess forming process. be able to.

  In the above embodiment, the oblique deposition method is adopted in the alignment film forming step. However, as long as the orthorhombic film can be formed, a sputter deposition method, a sol-gel method, a self-organization method, or the like is adopted. May be.

[Example of mounting on electronic devices]
(Configuration example of projection display device and optical unit)
FIG. 14 is a schematic configuration diagram of an example of a projection display device (electronic device) and an optical unit to which the present invention is applied. FIGS. 14A and 14B are projections using a transmissive liquid crystal device, respectively. It is explanatory drawing of an example of a type | mold display apparatus, and explanatory drawing of an example of the projection type display apparatus using a reflection type liquid crystal device.

  14A is an example using a transmissive liquid crystal panel as a liquid crystal panel, whereas the projection display apparatus 1000 shown in FIG. 14B is a liquid crystal panel. This is an example using a reflective liquid crystal panel. However, as will be described below, each of the projection display devices 110 and 1000 includes a light source unit 130 and 1021, and a plurality of liquid crystal devices 100 to which light in different wavelength ranges is supplied from the light source units 130 and 1021, Cross dichroic prisms 119 and 1027 (light combining optical system) that combine and output light emitted from the plurality of liquid crystal devices 100, and projection optical systems 118 and 1029 that project light combined by the light combining optical system ing. In the projection display devices 110 and 1000, an optical unit 300 including the liquid crystal device 100 and cross dichroic prisms 119 and 1027 (light combining optical system) is used.

(First example of projection display device)
A projection display device 110 shown in FIG. 14A is a so-called projection-type projection display device that irradiates light onto a screen 111 provided on the viewer side and observes light reflected by the screen 111. . The projection display device 110 includes a light source unit 130 including a light source 112, dichroic mirrors 113 and 114, liquid crystal light valves 115 to 117, a projection optical system 118, a cross dichroic prism 119 (combining optical system), and a relay. System 120.

  The light source 112 is composed of an ultrahigh pressure mercury lamp that supplies light including red light R, green light G, and blue light B. The dichroic mirror 113 is configured to transmit the red light R from the light source 112 and reflect the green light G and the blue light B. The dichroic mirror 114 is configured to transmit the blue light B and reflect the green light G out of the green light G and the blue light B reflected by the dichroic mirror 113. Thus, the dichroic mirrors 113 and 114 constitute a color separation optical system that separates the light emitted from the light source 112 into red light R, green light G, and blue light B.

  Here, between the dichroic mirror 113 and the light source 112, an integrator 121 and a polarization conversion element 122 are arranged in order from the light source 112. The integrator 121 is configured to make the illuminance dispersion of the light emitted from the light source 112 uniform. Further, the polarization conversion element 122 is configured to change the light from the light source 112 into polarized light having a specific vibration direction such as s-polarized light.

  The liquid crystal light valve 115 is a transmissive liquid crystal device that modulates red light transmitted through the dichroic mirror 113 and reflected by the reflection mirror 123 in accordance with an image signal. The liquid crystal light valve 115 includes a λ / 2 phase difference plate 115a, a first polarizing plate 115b, a liquid crystal device 100 (red liquid crystal panel 100R), and a second polarizing plate 115d. Here, the red light R incident on the liquid crystal light valve 115 remains as s-polarized light because the polarization of the light does not change even if it passes through the dichroic mirror 113.

  The λ / 2 phase difference plate 115a is an optical element that converts s-polarized light incident on the liquid crystal light valve 115 into p-polarized light. The first polarizing plate 115b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal device 100 (red liquid crystal panel 100R) is configured to convert p-polarized light into s-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 115d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 115 is configured to modulate the red light R according to the image signal and emit the modulated red light R toward the cross dichroic prism 119.

  Note that the λ / 2 phase difference plate 115a and the first polarizing plate 115b are disposed in contact with a light-transmitting glass plate 115e that does not convert the polarization, and the λ / 2 phase difference plate 115a and the first polarization plate 115b are arranged in contact with each other. It is possible to avoid the polarizing plate 115b from being distorted by heat generation.

  The liquid crystal light valve 116 is a transmissive liquid crystal device that modulates green light G reflected by the dichroic mirror 114 after being reflected by the dichroic mirror 113 in accordance with an image signal. Like the liquid crystal light valve 115, the liquid crystal light valve 116 includes a first polarizing plate 116b, a liquid crystal device 100 (green liquid crystal panel 100G), and a second polarizing plate 116d. Green light G incident on the liquid crystal light valve 116 is s-polarized light that is reflected by the dichroic mirrors 113 and 114 and then incident. The first polarizing plate 116b is a polarizing plate that blocks p-polarized light and transmits s-polarized light. The liquid crystal device 100 (green liquid crystal panel 100G) is configured to convert s-polarized light into p-polarized light (circularly polarized light or elliptically polarized light in the case of halftone) by modulation according to an image signal. The second polarizing plate 116d is a polarizing plate that blocks s-polarized light and transmits p-polarized light. Therefore, the liquid crystal light valve 116 is configured to modulate the green light G in accordance with the image signal and emit the modulated green light G toward the cross dichroic prism 119.

  The liquid crystal light valve 117 is a transmissive liquid crystal device that modulates the blue light B reflected by the dichroic mirror 113, transmitted through the dichroic mirror 114, and then passed through the relay system 120 in accordance with an image signal. Similar to the liquid crystal light valves 115 and 116, the liquid crystal light valve 117 includes a λ / 2 retardation film 117a, a first polarizing plate 117b, a liquid crystal device 100 (blue liquid crystal panel 100B), and a second polarizing plate 117d. ing. Here, the blue light B incident on the liquid crystal light valve 117 is reflected by two reflecting mirrors 125a and 125b (to be described later) of the relay system 120 after being reflected by the dichroic mirror 113 and transmitted through the dichroic mirror 114. It has become.

  The λ / 2 phase difference plate 117a is an optical element that converts s-polarized light incident on the liquid crystal light valve 117 into p-polarized light. The first polarizing plate 117b is a polarizing plate that blocks s-polarized light and transmits p-polarized light. The liquid crystal device 100 (blue liquid crystal panel 100B) is configured to convert p-polarized light to s-polarized light (circularly polarized light or elliptically polarized light if it is a halftone) by modulation according to an image signal. Furthermore, the second polarizing plate 117d is a polarizing plate that blocks p-polarized light and transmits s-polarized light. Therefore, the liquid crystal light valve 117 is configured to modulate the blue light B according to the image signal and emit the modulated blue light B toward the cross dichroic prism 119. The λ / 2 phase difference plate 117a and the first polarizing plate 117b are arranged in contact with the glass plate 117e.

  The relay system 120 includes relay lenses 124a and 124b and reflection mirrors 125a and 125b. The relay lenses 124a and 124b are provided to prevent light loss due to the long optical path of the blue light B. Here, the relay lens 124a is disposed between the dichroic mirror 114 and the reflection mirror 125a. The relay lens 124b is disposed between the reflection mirrors 125a and 125b. The reflection mirror 125a is disposed so as to reflect the blue light B transmitted through the dichroic mirror 114 and emitted from the relay lens 124a toward the relay lens 124b. The reflection mirror 125b is disposed so as to reflect the blue light B emitted from the relay lens 124b toward the liquid crystal light valve 117.

  The cross dichroic prism 119 is a color combining optical system in which two dichroic films 119a and 119b are arranged orthogonally in an X shape. The dichroic film 119a is a film that reflects blue light B and transmits green light G, and the dichroic film 119b is a film that reflects red light R and transmits green light G. Therefore, the cross dichroic prism 119 is configured to combine the red light R, the green light G, and the blue light B modulated by each of the liquid crystal light valves 115 to 117 and emit the resultant light toward the projection optical system 118. Yes.

  Note that light incident on the cross dichroic prism 119 from the liquid crystal light valves 115 and 117 is s-polarized light, and light incident on the cross dichroic prism 119 from the liquid crystal light valve 116 is p-polarized light. Thus, by making the light incident on the cross dichroic prism 119 into different types of polarized light, the light incident from the liquid crystal light valves 115 to 117 in the cross dichroic prism 119 can be synthesized. Here, in general, the dichroic films 119a and 119b are excellent in s-polarized reflection transistor characteristics. For this reason, red light R and blue light B reflected by the dichroic films 119a and 119b are s-polarized light, and green light G transmitted through the dichroic films 119a and 119b is p-polarized light. The projection optical system 118 has a projection lens (not shown) and is configured to project the light combined by the cross dichroic prism 119 onto the screen 111.

(Second example of projection display device)
A projection display apparatus 1000 shown in FIG. 14B has a light source unit 1021 that generates light source light, and light sources emitted from the light source unit 1021 in three colors of red light R, green light G, and blue light B. It has a color separation light guide optical system 1023 that separates into color light, and a light modulator 1025 that is illuminated by the light source light of each color emitted from the color separation light guide optical system 1023. Further, the projection display apparatus 1000 uses a cross dichroic prism 1027 (combining optical system) that synthesizes the image light of each color emitted from the light modulation unit 1025 and the image light that has passed through the cross dichroic prism 1027 on a screen (not shown). A projection optical system 1029 for projecting.

  In the projection display apparatus 1000, the light source unit 1021 includes a light source 1021a, a pair of fly-eye optical systems 1021d and 1021e, a polarization conversion member 1021g, and a superimposing lens 1021i. In the present embodiment, the light source unit 1021 includes a reflector 1021f having a paraboloid and emits parallel light. The fly-eye optical systems 1021d and 1021e are composed of a plurality of element lenses arranged in a matrix in a plane orthogonal to the system optical axis, and the light source light is divided and condensed and diverged individually by these element lenses. The polarization conversion member 1021g converts the light source light emitted from the fly-eye optical system 1021e into, for example, only a p-polarized component parallel to the drawing, and supplies it to the optical path downstream optical system. The superimposing lens 1021i allows the plurality of liquid crystal devices 100 provided in the light modulation unit 1025 to uniformly illuminate each other by appropriately converging the light source light that has passed through the polarization conversion member 1021g as a whole.

  The color separation light guide optical system 1023 includes a cross dichroic mirror 1023a, a dichroic mirror 1023b, and reflection mirrors 1023j and 1023k. In the color separation light guide optical system 1023, the substantially white light source light from the light source unit 1021 enters the cross dichroic mirror 1023a. The red light R reflected by one of the first dichroic mirrors 1031a constituting the cross dichroic mirror 1023a is reflected by the reflecting mirror 1023j, passes through the dichroic mirror 1023b, and transmits the incident side polarizing plate 1037r and p-polarized light. The light enters the liquid crystal device 100 (red liquid crystal panel 100R) as p-polarized light through the wire grid polarizer 1032r that reflects s-polarized light and the optical compensation plate 1039r.

  Further, the green light G reflected by the first dichroic mirror 1031a is reflected by the reflecting mirror 1023j and then also reflected by the dichroic mirror 1023b to transmit the incident side polarizing plate 1037g and p-polarized light while reflecting s-polarized light. The light is incident on the liquid crystal device 100 (green liquid crystal panel 100G) as p-polarized light through the wire grid polarizing plate 1032g and the optical compensation plate 1039g.

  On the other hand, the blue light B reflected by the other second dichroic mirror 1031b constituting the cross dichroic mirror 1023a is reflected by the reflection mirror 1023k and transmits the incident-side polarizing plate 1037b, p-polarized light, while s The light is incident on the liquid crystal device 100 (blue liquid crystal panel 100B) as p-polarized light through the wire grid polarizing plate 1032b that reflects the polarized light and the optical compensation plate 1039b. Note that the optical compensation plates 1039r, 1039g, and 1039b optically compensate the characteristics of the liquid crystal layer by adjusting the polarization states of the incident light and the emitted light to the liquid crystal device 100.

  In the projection display apparatus 1000 configured as described above, the three colors of light incident through the optical compensation plates 1039r, 1039g, and 1039b are modulated in the liquid crystal devices 100, respectively. At that time, of the modulated light emitted from the liquid crystal device 100, the s-polarized component light is reflected by the wire grid polarizing plates 1032r, 1032g, and 1032b, and crossed dichroic prisms via the outgoing-side polarizing plates 1038r, 1038g, and 1038b. Incident at 1027. The cross dichroic prism 1027 is formed with a first dielectric multilayer film 1027a and a second dielectric multilayer film 1027b that intersect in an X shape, and the first dielectric multilayer film 1027a reflects the red light R. The other second dielectric multilayer film 1027b reflects the blue light B. Therefore, the three colors of light are combined by the cross dichroic prism 1027 and emitted to the projection optical system 1029. The projection optical system 1029 projects the color image light combined by the cross dichroic prism 1027 onto a screen (not shown) at a desired magnification.

(Other projection display devices)
In addition, about a projection type display apparatus, you may comprise the LED light source etc. which radiate | emit the light of each color as a light source part, and supply each color light radiate | emitted from this LED light source to another liquid crystal device. . The present invention may also be applied to an electro-optical device used in a projection display device mounted on a head mounted display (HMD).

(Other electronic devices)
As for the liquid crystal device 100 to which the present invention is applied, in addition to the electronic devices described above, mobile phones, personal digital assistants (PDAs), digital cameras, liquid crystal televisions, car navigation devices, video phones, POS terminals, You may use as a direct view type | mold display apparatus in electronic devices, such as an apparatus provided with the touch panel.

9 .. Conductive film, 9a..Pixel electrode, 9e, 16e, 17e, 21e, 24e, 26e, 27e, 45e ..Concavity, 10 ... First substrate, 16 ... Alignment film, 20..Second substrate , 21 .. Common electrode, 26 .. Alignment film, 50 .. Electro-optical material layer, 100 .. Liquid crystal device, 100 p .. Liquid crystal panel, 15, 17, 25, 27 .. Insulating film, 45. Film (insulating film), 45a, contact hole, 200, substrate processing apparatus, 210, vacuum chamber, 240, target

Claims (12)

A film forming step of forming a film by a dry process on one side of the substrate in a vacuum chamber;
A recess forming step of forming a recess on the surface of the film by performing dry etching without an etching mask on the surface of the film in the vacuum chamber;
An alignment film forming step of forming an inorganic alignment film made of an orthorhombic film on the surface of the film after the recess forming step;
A method for producing a substrate for a liquid crystal device, comprising: A recess forming step of forming a recess on the one side by performing dry etching without an etching mask on one side of the substrate in a vacuum chamber;
A film forming step of forming a film by a dry process on the one surface side in the vacuum chamber;
After the film forming step, an alignment film forming step of forming an inorganic alignment film made of an orthorhombic film on the surface of the film;
A method for producing a substrate for a liquid crystal device, comprising: Before the recess forming step, an insulating film forming step of forming an insulating film on the one surface side of the substrate, and a contact hole forming step of forming a contact hole in the insulating film,
The method for manufacturing a substrate for a liquid crystal device according to claim 2, wherein in the film forming step, a conductive film is formed as the film.   4. The method for manufacturing a substrate for a liquid crystal device according to claim 1, wherein the film forming step and the recess forming step are continuously performed without taking the substrate out of the vacuum chamber. 5. . In the film formation step, the film is formed by sputtering film formation in which accelerated ions collide with a target.
5. The method for manufacturing a substrate for a liquid crystal device according to claim 1, wherein, in the recess forming step, the recess is formed by sputter etching in which accelerated ions collide with the substrate.   The cleaning process for cleaning one surface side of the substrate is performed after the recess forming process and before the alignment film forming process. A method for manufacturing a substrate for a liquid crystal device.   The method for manufacturing a substrate for a liquid crystal device according to claim 1, wherein the film is a conductive film for forming an electrode for applying a voltage to the liquid crystal layer. The conductive film is a conductive film for forming a pixel electrode,
8. The method for manufacturing a substrate for a liquid crystal device according to claim 7, wherein a patterning step of patterning the conductive film to form a pixel electrode is performed before the alignment film forming step.   The method for manufacturing a substrate for a liquid crystal device according to claim 7, wherein the conductive film is a conductive film for forming a common electrode. An electrode forming step of introducing a sputtering gas in a vacuum atmosphere and sputtering the target with a negative potential to form an electrode on one surface of the substrate;
A recess forming step of forming a recess on the surface of the electrode by sputtering the surface of the electrode with the substrate at a negative potential in a vacuum atmosphere into which the sputtering gas is introduced in the same apparatus as the electrode forming step; ,
After the recess forming step, an alignment film forming step of forming an inorganic alignment film made of an orthorhombic film on the surface of the electrode;
A method for producing a substrate for a liquid crystal device, comprising: A film forming step of forming a film by a dry process on one side of the substrate in a vacuum chamber;
A recess forming step of forming a recess on the surface of the film by performing dry etching without an etching mask on the surface of the film in the vacuum chamber;
An alignment film forming step of forming an inorganic alignment film made of an orthorhombic film on the surface of the film after the recess forming step;
A method for manufacturing a liquid crystal device, comprising: A recess forming step of forming a recess on the one side by performing dry etching without an etching mask on one side of the substrate in a vacuum chamber;
A film forming step of forming a film by a dry process on the one surface side in the vacuum chamber;
After the film forming step, an alignment film forming step of forming an inorganic alignment film made of an orthorhombic film on the surface of the film;
A method for manufacturing a liquid crystal device, comprising:

Images