JP2015028425A5 - - Google Patents

Download PDF

Info

Publication number
JP2015028425A5
JP2015028425A5 JP2013157230A JP2013157230A JP2015028425A5 JP 2015028425 A5 JP2015028425 A5 JP 2015028425A5 JP 2013157230 A JP2013157230 A JP 2013157230A JP 2013157230 A JP2013157230 A JP 2013157230A JP 2015028425 A5 JP2015028425 A5 JP 2015028425A5
Authority
JP
Japan
Prior art keywords
substrate
recess
hole
side wall
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013157230A
Other languages
Japanese (ja)
Other versions
JP2015028425A (en
JP6432722B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2013157230A priority Critical patent/JP6432722B2/en
Priority claimed from JP2013157230A external-priority patent/JP6432722B2/en
Publication of JP2015028425A publication Critical patent/JP2015028425A/en
Publication of JP2015028425A5 publication Critical patent/JP2015028425A5/ja
Application granted granted Critical
Publication of JP6432722B2 publication Critical patent/JP6432722B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (2)

基板の第１面（表面）から第２面（裏面）に向かい、基板面（第１面および第２面）に対して略垂直に形成された凹部または貫通孔を用いることを特徴とする電気二重層キャパシタであって、前記凹部または貫通孔の対向する２つの側面を電極（対向電極）とし、前記対向電極間の前記凹部または貫通孔内に電解質を有することを特徴とする電気二重層キャパシタ。 A recess or a through-hole formed from a first surface (front surface) to a second surface (back surface) of the substrate and substantially perpendicular to the substrate surfaces (first surface and second surface) is used. An electric double layer capacitor, wherein two opposing side surfaces of the recess or the through hole are electrodes (counter electrodes), and an electrolyte is provided in the recess or the through hole between the counter electrodes. .
圧電体基板の第１面（表面）から第２面（裏面）に向かい、基板面（第１面および第２面）に対して略垂直に形成された凹部または貫通孔を用いることを特徴とする微小発電機であって、隣接する凹部によって形成される基板側壁の両側面に形成した導電体膜・電極を２つの電極とし、前記基板側壁が変形することによって基板側壁の両側面に発生する電荷を前記導電体膜・電極で集めて発電することを特徴とする微小発電機。
Using a recess or a through hole formed from the first surface (front surface) of the piezoelectric substrate to the second surface (back surface) and substantially perpendicular to the substrate surface (first surface and second surface). This is a micro-generator that is formed on both side surfaces of a substrate side wall by deforming the substrate side wall using two conductive film / electrodes formed on both side surfaces of the substrate side wall formed by adjacent recesses. A micro-generator that collects electric charges by the conductor film / electrode and generates electric power.
JP2013157230A 2013-07-30 2013-07-30 Semiconductor sensor device and manufacturing method thereof Active JP6432722B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013157230A JP6432722B2 (en) 2013-07-30 2013-07-30 Semiconductor sensor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013157230A JP6432722B2 (en) 2013-07-30 2013-07-30 Semiconductor sensor device and manufacturing method thereof

Publications (3)

Publication Number Publication Date
JP2015028425A JP2015028425A (en) 2015-02-12
JP2015028425A5 true JP2015028425A5 (en) 2016-09-29
JP6432722B2 JP6432722B2 (en) 2018-12-05

Family

ID=52492198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013157230A Active JP6432722B2 (en) 2013-07-30 2013-07-30 Semiconductor sensor device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP6432722B2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6665589B2 (en) * 2016-03-02 2020-03-13 オムロン株式会社 Pressure sensor chip and pressure sensor
JP6665588B2 (en) * 2016-03-02 2020-03-13 オムロン株式会社 Pressure sensor
EP3392633B1 (en) 2017-04-19 2019-12-11 Huba Control Ag Pressure transducer
JP7009857B2 (en) * 2017-09-13 2022-01-26 セイコーエプソン株式会社 Liquid injection head, liquid injection device, and piezoelectric device
CN109778114B (en) * 2017-11-14 2021-10-15 大日本印刷株式会社 Metal plate for manufacturing vapor deposition mask, method for manufacturing metal plate, vapor deposition mask, and method for manufacturing vapor deposition mask
CN109026630B (en) * 2018-08-14 2024-01-26 青岛天工智造创新科技有限公司 Compression device and compression method thereof
DE102018214634B3 (en) 2018-08-29 2019-09-12 Robert Bosch Gmbh Sensor device and method for producing a sensor device
KR20210075141A (en) * 2018-10-10 2021-06-22 요하노이움 리서치 포르슝스게젤샤프트 엠베하 piezoelectric sensor
CN111627723B (en) * 2020-04-27 2021-08-17 清华大学 Self-sensing super capacitor with self-matched impact amplitude and manufacturing method thereof
CN113211997B (en) * 2021-04-21 2022-04-08 四川天邑康和通信股份有限公司 Intelligent jet printing production process control method for double parallel butterfly-shaped lead-in optical cable
CN113406147B (en) * 2021-05-08 2022-11-29 中北大学 Hydrogen sensitive element and preparation method thereof
CN114279599A (en) * 2021-12-27 2022-04-05 北京京东方技术开发有限公司 Flexible pressure sensor, flexible pressure strain sensing assembly and pressure detection method
CN114551641B (en) * 2022-02-10 2023-09-12 中国科学院上海技术物理研究所 Thermal layer structure of focal plane detector for physically isolating coupling stress
CN117722486B (en) * 2024-02-07 2024-04-26 江苏凯同威工业装备科技有限公司 Torque transmission device of torque sensor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008505434A (en) * 2004-04-27 2008-02-21 テル アビブ ユニバーシティ フューチャー テクノロジー ディベロップメント リミティド パートナーシップ 3-D micro battery based on interlaced micro container structure
FR2880197B1 (en) * 2004-12-23 2007-02-02 Commissariat Energie Atomique ELECTROLYTE STRUCTURE FOR MICROBATTERY
JP5181413B2 (en) * 2005-09-13 2013-04-10 日立電線株式会社 Electrode for electrochemical device, solid electrolyte / electrode assembly and method for producing the same
JP2008078119A (en) * 2006-08-25 2008-04-03 Ngk Insulators Ltd Totally solid storage element
JP5452898B2 (en) * 2008-08-20 2014-03-26 積水化学工業株式会社 Electrode device and manufacturing method thereof
EP2410649B1 (en) * 2009-03-18 2017-05-17 Fujitsu Limited Piezoelectric power generating device
JP5572974B2 (en) * 2009-03-24 2014-08-20 セイコーエプソン株式会社 Manufacturing method of solid secondary battery
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
JP2011004598A (en) * 2010-09-03 2011-01-06 Seiko Epson Corp Piezoelectric generator and electronic apparatus using piezoelectric generator
JP2012104691A (en) * 2010-11-11 2012-05-31 Nec Corp Vibration power generating device

Similar Documents

Publication Publication Date Title
JP2015028425A5 (en)
JP2015062079A5 (en)
JP2014225445A5 (en) Secondary battery and method of manufacturing secondary battery electrode
JP2013239435A5 (en) Power storage device and electronic device
JP2014038834A5 (en) Secondary battery, electronic equipment
JP2015233003A5 (en) Secondary battery and electronic equipment
GB2523922A (en) Nanostructured electrolytic energy storage devices
WO2011161052A3 (en) Electromechanical converter, method for producing same, and use thereof
EP2866469A3 (en) Acoustic transducer and package module including the same
WO2015175558A3 (en) Energy storage device and method of production thereof
EP4102585A3 (en) High density three-dimensional integrated capacitors
JP2016039137A5 (en) Secondary battery
TWI456262B (en) Switchable touch stereoscopic image device
JP2013179097A5 (en) Display device
WO2013151590A3 (en) Triboelectric generator
JP2012009701A5 (en)
JP2013045974A5 (en)
JP2013539586A5 (en)
JP2019514022A5 (en)
JP2012182446A5 (en)
JP2011216476A5 (en)
JP2013156102A5 (en)
JP2014204005A5 (en)
EP2500702A3 (en) Vibration transducer
JP2010226898A5 (en)