JP2013156102A5 - - Google Patents
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- JP2013156102A5 JP2013156102A5 JP2012016017A JP2012016017A JP2013156102A5 JP 2013156102 A5 JP2013156102 A5 JP 2013156102A5 JP 2012016017 A JP2012016017 A JP 2012016017A JP 2012016017 A JP2012016017 A JP 2012016017A JP 2013156102 A5 JP2013156102 A5 JP 2013156102A5
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- Prior art keywords
- substrate
- groove
- electrode
- side wall
- conductor
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- 239000000758 substrate Substances 0.000 claims 28
- 239000004020 conductor Substances 0.000 claims 9
- 239000012212 insulator Substances 0.000 claims 9
- 239000003990 capacitor Substances 0.000 claims 7
- 230000000149 penetrating Effects 0.000 claims 3
- 239000002131 composite material Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
Claims (2)
隣接する2つの貫通溝(第1貫通溝および第2貫通溝)を横方向(導電体基板の厚さ方向に対して略直角方向)に隔てる導電体基板を一方の電極(第1側壁容量電極)とし、
前記第1側壁容量電極と前記隣接する貫通溝のうちの1つ(第1貫通溝)を挟んで対向し、前記第1側壁容量電極と電気的に導通しない導電体基板の側壁を他方の対向電極(第2側壁容量電極)とし、これらの第1側壁容量電極および第2側壁容量電極の間の第1貫通溝空間を静電容量空間とし、前記静電容量空間となる第1貫通溝の空間の圧力と前記第1側壁容量電極を挟んだ他の貫通溝(第2貫通溝)の空間の圧力との圧力差により、前記第1側壁電極が変位することにより前記第1貫通溝空間の静電容量が変化することを用いて圧力を検出することを特徴とし、さらに
第1側壁容量電極は、その上面が第1面絶縁体基板に付着、および/またはその下面が第2面絶縁体基板に付着していること、および/または
第2側壁容量電極は、その上面が第1面絶縁体基板に付着、および/またはその下面が第2面絶縁体基板に付着していること、を特徴とする、
静電容量型圧力センサー。 A conductor substrate having a thickness of 2.0 mm or less having at least two groove (penetrating groove) spaces penetrating one or both of the upper surface and the lower surface, and an upper surface (first surface) of the conductor substrate An attached insulating substrate (first surface insulating substrate) having a thickness of 1.0 mm or less and an insulating substrate having a thickness of 1.0 mm or less (second surface) attached to the lower surface (second surface) of the conductive substrate. A capacitive pressure sensor comprising a surface insulator substrate),
One electrode (first side wall capacitor electrode) that separates two adjacent through grooves (first through groove and second through groove) in the lateral direction (substantially perpendicular to the thickness direction of the conductive substrate). )age,
The first side wall capacitor electrode is opposed to one of the adjacent through grooves (first through groove), and the other side wall of the conductor substrate that is not electrically connected to the first side wall capacitor electrode is opposed to the other. An electrode (second sidewall capacitor electrode), and a first through groove space between the first sidewall capacitor electrode and the second sidewall capacitor electrode is defined as a capacitance space, and the first through groove serving as the capacitance space is formed. Due to the pressure difference between the pressure of the space and the pressure of the space of the other through groove (second through groove) sandwiching the first side wall capacitive electrode, the first side wall electrode is displaced, so that the first through groove space The pressure is detected using a change in capacitance, and the first side wall capacitor electrode has an upper surface attached to the first surface insulator substrate and / or a lower surface thereof is a second surface insulator. The adhesion to the substrate and / or the second sidewall capacitance electrode Upper surface attached to the first surface insulating substrate, and / or that the lower surface is adhered to the second surface insulating substrate, and wherein,
Capacitive pressure sensor.
前記導電体基板の第1面側にパターニングされた感光性膜を用いて導電体基板の第1面から第2面に貫通し第2面絶縁体基板に達する第1面貫通溝を形成する工程、
前記導電体基板の第1面側に1.0mm以下の厚みを持つ絶縁体基板(第1面絶縁体基板)を付着させ、前記第1面貫通溝の1部または全部を閉空間とする工程、
前記複合基板の第2面絶縁体基板にパターニングされた感光性膜を用いて第2面絶縁体基板および導電体基板の第2面から第1面に貫通し第1面絶縁体基板に達する貫通溝(第2面貫通溝)を形成する工程、
を含む静電容量型圧力センサーの製造方法であって、
隣接する2つの貫通溝(第1面貫通溝および第2面貫通溝)により挟まれた導電体側壁を静電容量素子の電極として用い、第1面貫通溝の圧力と第2面貫通溝の圧力差により前記導電体側壁電極が変形することによる静電容量素子の電気容量が変化することを用いた静電容量型圧力センサーの製造方法。 An insulator substrate (second surface insulator substrate) having a thickness of 1.0 mm or less on the second surface of a conductor substrate having a thickness of 2.0 mm or less having a front surface (first surface) and a back surface (second surface). A process for producing a composite substrate to which
Forming a first surface through groove penetrating from the first surface of the conductor substrate to the second surface using the patterned photosensitive film on the first surface side of the conductor substrate and reaching the second surface insulator substrate; ,
A step of attaching an insulating substrate (first surface insulating substrate) having a thickness of 1.0 mm or less to the first surface side of the conductive substrate, and setting one or all of the first surface through grooves to be a closed space; ,
Using the photosensitive film patterned on the second surface insulator substrate of the composite substrate, the second surface insulator substrate and the second surface of the conductor substrate penetrate from the second surface to the first surface to reach the first surface insulator substrate. Forming a groove (second surface through groove);
A method of manufacturing a capacitive pressure sensor including:
The conductor side wall sandwiched between two adjacent through grooves (first surface through groove and second surface through groove) is used as an electrode of the capacitance element, and the pressure of the first surface through groove and the second surface through groove are A method for manufacturing a capacitance-type pressure sensor using a change in capacitance of a capacitance element caused by deformation of the conductor side wall electrode due to a pressure difference.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012016017A JP6393930B2 (en) | 2012-01-30 | 2012-01-30 | Semiconductor sensor device and manufacturing method thereof |
PCT/JP2013/052087 WO2013115270A1 (en) | 2012-01-30 | 2013-01-30 | Semiconductor sensor/device and method for producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012016017A JP6393930B2 (en) | 2012-01-30 | 2012-01-30 | Semiconductor sensor device and manufacturing method thereof |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018007756A Division JP2018124275A (en) | 2018-01-21 | 2018-01-21 | Semiconductor sensor-device and method of manufacturing the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013156102A JP2013156102A (en) | 2013-08-15 |
JP2013156102A5 true JP2013156102A5 (en) | 2015-03-19 |
JP6393930B2 JP6393930B2 (en) | 2018-09-26 |
Family
ID=48905302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012016017A Expired - Fee Related JP6393930B2 (en) | 2012-01-30 | 2012-01-30 | Semiconductor sensor device and manufacturing method thereof |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6393930B2 (en) |
WO (1) | WO2013115270A1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101467934B1 (en) | 2013-12-02 | 2014-12-02 | 한국세라믹기술원 | Piezo fiber composite structure and device using thereof |
KR101467933B1 (en) | 2013-12-02 | 2014-12-02 | 한국세라믹기술원 | Piezo fiber composite structure and device using thereof |
KR101851549B1 (en) | 2014-03-14 | 2018-04-24 | 고쿠리츠켄큐카이하츠호진 카가쿠기쥬츠신코키코 | Transistor using piezoresistor as channel, and electronic circuit |
KR101971874B1 (en) * | 2015-02-04 | 2019-04-25 | (주)엘지하우시스 | Transmissivity changeable film, display device including the same and method for preparing transmissivity changeable film |
DE102015210919A1 (en) * | 2015-06-15 | 2016-12-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | A MEMS transducer for interacting with a volumetric flow of a fluid and method of making the same |
CN105371878B (en) * | 2015-12-04 | 2017-08-25 | 歌尔股份有限公司 | A kind of environmental sensor and its manufacture method |
DE102017206766A1 (en) | 2017-04-21 | 2018-10-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | MEMS CONVERTER FOR INTERACTING WITH A VOLUME FLOW OF A FLUID AND METHOD FOR MANUFACTURING THEREOF |
JP6932536B2 (en) * | 2017-04-21 | 2021-09-08 | 株式会社バルカー | Manufacturing method of piezoelectric laminate and piezoelectric laminate |
CN107994006A (en) * | 2017-12-30 | 2018-05-04 | 颀中科技(苏州)有限公司 | Flip-chip assembly, flip chip packaging structure and method for packing |
JP7066852B2 (en) * | 2018-07-30 | 2022-05-13 | 京セラ株式会社 | Composite board |
US11779232B2 (en) | 2019-04-30 | 2023-10-10 | Korea Advanced Institute Of Science And Technology | Flexible pressure sensor using multi-material 3D-printed microchannel mold and method for manufacturing the same |
CN110545505A (en) * | 2019-08-19 | 2019-12-06 | 歌尔股份有限公司 | A conducting film and sound generating mechanism for sound generating mechanism |
JP2021082734A (en) * | 2019-11-20 | 2021-05-27 | 株式会社デンソー | Wafer for forming element and production method of the same |
CN112781757B (en) * | 2020-12-26 | 2023-10-31 | 重庆华知光环保科技有限责任公司 | Flexible capacitive pressure sensor based on graphene and preparation method thereof |
WO2024018769A1 (en) * | 2022-07-21 | 2024-01-25 | キヤノン株式会社 | Dicing method and recording element manufacturing method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0746068B2 (en) * | 1987-01-16 | 1995-05-17 | 日産自動車株式会社 | Pressure sensor |
JPS6413158U (en) * | 1987-07-10 | 1989-01-24 | ||
JPH11220137A (en) * | 1998-02-02 | 1999-08-10 | Denso Corp | Semiconductor pressure sensor and manufacture thereof |
JP5206726B2 (en) * | 2010-04-12 | 2013-06-12 | 株式会社デンソー | Mechanical quantity detection device and manufacturing method thereof |
-
2012
- 2012-01-30 JP JP2012016017A patent/JP6393930B2/en not_active Expired - Fee Related
-
2013
- 2013-01-30 WO PCT/JP2013/052087 patent/WO2013115270A1/en active Application Filing
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