JP2015023396A - 直交変調器 - Google Patents
直交変調器 Download PDFInfo
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- JP2015023396A JP2015023396A JP2013149580A JP2013149580A JP2015023396A JP 2015023396 A JP2015023396 A JP 2015023396A JP 2013149580 A JP2013149580 A JP 2013149580A JP 2013149580 A JP2013149580 A JP 2013149580A JP 2015023396 A JP2015023396 A JP 2015023396A
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- 239000003990 capacitor Substances 0.000 claims abstract description 57
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000003786 synthesis reaction Methods 0.000 claims description 23
- 238000004804 winding Methods 0.000 claims description 20
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000003321 amplification Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000003199 nucleic acid amplification method Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C3/00—Angle modulation
- H03C3/38—Angle modulation by converting amplitude modulation to angle modulation
- H03C3/40—Angle modulation by converting amplitude modulation to angle modulation using two signal paths the outputs of which have a predetermined phase difference and at least one output being amplitude-modulated
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L25/03343—Arrangements at the transmitter end
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/26—Systems using multi-frequency codes
- H04L27/2601—Multicarrier modulation systems
- H04L27/2614—Peak power aspects
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L27/00—Modulated-carrier systems
- H04L27/32—Carrier systems characterised by combinations of two or more of the types covered by groups H04L27/02, H04L27/10, H04L27/18 or H04L27/26
- H04L27/34—Amplitude- and phase-modulated carrier systems, e.g. quadrature-amplitude modulated carrier systems
- H04L27/36—Modulator circuits; Transmitter circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/08—Amplitude modulation by means of variable impedance element
- H03C1/12—Amplitude modulation by means of variable impedance element the element being a voltage-dependent capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C2200/00—Indexing scheme relating to details of modulators or modulation methods covered by H03C
- H03C2200/0037—Functional aspects of modulators
- H03C2200/0058—Quadrature arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/336—A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/537—A transformer being used as coupling element between two amplifying stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04L—TRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
- H04L25/00—Baseband systems
- H04L25/02—Details ; arrangements for supplying electrical power along data transmission lines
- H04L25/03—Shaping networks in transmitter or receiver, e.g. adaptive shaping networks
- H04L25/03006—Arrangements for removing intersymbol interference
- H04L2025/0335—Arrangements for removing intersymbol interference characterised by the type of transmission
- H04L2025/03375—Passband transmission
- H04L2025/03414—Multicarrier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Amplitude Modulation (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
- Transmitters (AREA)
Abstract
Description
本発明の実施の形態1に係る直交変調器100について説明する。
本発明の実施の形態2に係る直交変調器200について説明する。
本発明の実施の形態3に係る直交変調器300について説明する。
本発明の実施の形態4は、上述した実施の形態1〜3の各インダクタに適用可能な例である。
本発明の実施の形態5は、上述した実施の形態1〜4の直交変調器を備えた送信装置である。
121、122、221、222、223、224、321、322、323、324 インダクタ
131、231、232、331、332 バラン
141、241、341 負荷
401、402 等価内部容量
500 送信装置
501 直交変調器
511 整合回路
521 アンテナ
Claims (7)
- 相対的に位相差を有する2つの高周波信号をそれぞれ増幅する2つのスイッチトキャパシタ電力増幅器と、
1次側と2次側のそれぞれに少なくとも1つの巻線を備え、1次側の巻線と2次側の巻線とが磁気結合した素子であって、増幅された前記2つの高周波信号を1次側から別々に入力して合成し、2次側から直交変調信号として出力する第1合成素子と、
前記2つのスイッチトキャパシタ電力増幅器と前記第1合成素子の1次側との間にそれぞれ備えられるインダクタと、を有する、
直交変調器。 - 第1の位相を有する高周波信号を増幅する第1増幅器と、第2の位相を有する高周波信号を増幅する第2増幅器とを備えた前記2つのスイッチトキャパシタ電力増幅器と、
前記第1増幅器の出力端子と前記第1合成素子の1次側の第1端子との間に備えられる第1インダクタと、
前記第2増幅器の出力端子と前記第1合成素子の1次側の第2端子との間に備えられる第2インダクタと、
前記第1増幅器、前記第1インダクタ、および前記第1端子を介して入力された前記第1の位相を有する高周波信号と、前記第2増幅器、前記第2インダクタ、および前記第2端子を介して入力された前記第2の位相を有する高周波信号とを合成して直交変調信号を前記2次側から出力する前記第1合成素子と、を有する、
請求項1記載の直交変調器。 - 前記第1の位相が0度、かつ、前記第2の位相が90度である、
請求項2記載の直交変調器。 - 第3の位相を有する高周波信号を増幅するスイッチトキャパシタ電力増幅器である第3増幅器と、
第4の位相を有する高周波信号を増幅するスイッチトキャパシタ電力増幅器である第4増幅器と、
1次側と2次側のそれぞれに少なくとも1つの巻線を備え、1次側の巻線と2次側の巻線とが磁気結合する素子であって、前記第3増幅器および前記第4増幅器でそれぞれ増幅された2つの高周波信号を別々に1次側から入力して合成し、2次側から直交変調信号として出力する第2合成素子と、をさらに有し、
前記第3増幅器の出力端子と前記第2合成素子の1次側の第3端子とが、第3インダクタを介して接続され、
前記第4増幅器の出力端子と前記第2合成素子の1次側の第4端子とが、第4インダクタを介して接続され、
前記第2合成素子は、
前記第3増幅器、前記第3インダクタ、および前記第3端子を介して入力された前記第3の位相を有する高周波信号と、前記第4増幅器、前記第4インダクタ、および前記第4端子を介して入力された前記第4の位相を有する高周波信号とを合成して直交変調信号を生成し、前記第2合成素子の2次側から前記第1合成素子の2次側へ出力する、
請求項2記載の直交変調器。 - 前記第1の位相が0度、前記第2の位相が90度、前記第3の位相が180度、前記第4の位相が270度である、
請求項4記載の直交変調器。 - 前記第1の位相が0度、前記第2の位相が180度、前記第3の位相が90度、前記第4の位相が270度である、
請求項4記載の直交変調器。 - 前記インダクタのインダクタンス値は、前記スイッチトキャパシタ電力増幅器の内部容量と前記高周波信号の周波数とで共振する値である、
請求項1から6のいずれか1項に記載の直交変調器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013149580A JP6211325B2 (ja) | 2013-07-18 | 2013-07-18 | 直交変調器 |
PCT/JP2014/003564 WO2015008449A1 (ja) | 2013-07-18 | 2014-07-04 | 直交変調器 |
US14/661,762 US9331635B2 (en) | 2013-07-18 | 2015-03-18 | Quadrature modulator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013149580A JP6211325B2 (ja) | 2013-07-18 | 2013-07-18 | 直交変調器 |
Publications (2)
Publication Number | Publication Date |
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JP2015023396A true JP2015023396A (ja) | 2015-02-02 |
JP6211325B2 JP6211325B2 (ja) | 2017-10-11 |
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Family Applications (1)
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JP2013149580A Expired - Fee Related JP6211325B2 (ja) | 2013-07-18 | 2013-07-18 | 直交変調器 |
Country Status (3)
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US (1) | US9331635B2 (ja) |
JP (1) | JP6211325B2 (ja) |
WO (1) | WO2015008449A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019220777A (ja) * | 2018-06-18 | 2019-12-26 | ルネサスエレクトロニクス株式会社 | 無線送信装置および無線通信装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002534908A (ja) * | 1999-01-07 | 2002-10-15 | エリクソン インコーポレイテッド | 電力iq変調システムおよび方法 |
JP2011254245A (ja) * | 2010-06-01 | 2011-12-15 | Panasonic Corp | デジタル変調器及び送信機 |
JP2012254003A (ja) * | 2011-05-09 | 2012-12-20 | Panasonic Corp | 無線電力データ伝送システム、送電装置、および受電装置 |
JP2013524626A (ja) * | 2010-04-02 | 2013-06-17 | エム ケー エス インストルメンツ インコーポレーテッド | クラス特性可変増幅器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3080857B2 (ja) * | 1995-03-31 | 2000-08-28 | 株式会社東芝 | デジタル振幅変調装置 |
US7872543B2 (en) * | 2008-06-05 | 2011-01-18 | Qualcomm, Incorporated | Bi-polar modulator |
EP2204910B1 (en) * | 2008-12-30 | 2013-07-03 | ST-Ericsson SA | Digital to analogue converter |
US8693578B2 (en) | 2009-12-08 | 2014-04-08 | Nec Corporation | Transmission device |
US8547177B1 (en) * | 2010-05-12 | 2013-10-01 | University Of Washington Through Its Center For Commercialization | All-digital switched-capacitor radio frequency power amplification |
US8542769B2 (en) * | 2011-06-09 | 2013-09-24 | St-Ericsson Sa | High output power digital TX |
JP2013110619A (ja) * | 2011-11-22 | 2013-06-06 | Mitsubishi Electric Corp | 増幅器 |
JP6252478B2 (ja) * | 2012-09-14 | 2017-12-27 | 日本電気株式会社 | 送信機 |
-
2013
- 2013-07-18 JP JP2013149580A patent/JP6211325B2/ja not_active Expired - Fee Related
-
2014
- 2014-07-04 WO PCT/JP2014/003564 patent/WO2015008449A1/ja active Application Filing
-
2015
- 2015-03-18 US US14/661,762 patent/US9331635B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002534908A (ja) * | 1999-01-07 | 2002-10-15 | エリクソン インコーポレイテッド | 電力iq変調システムおよび方法 |
JP2013524626A (ja) * | 2010-04-02 | 2013-06-17 | エム ケー エス インストルメンツ インコーポレーテッド | クラス特性可変増幅器 |
JP2011254245A (ja) * | 2010-06-01 | 2011-12-15 | Panasonic Corp | デジタル変調器及び送信機 |
JP2012254003A (ja) * | 2011-05-09 | 2012-12-20 | Panasonic Corp | 無線電力データ伝送システム、送電装置、および受電装置 |
Non-Patent Citations (1)
Title |
---|
S. M. YOO ET AL.: "A Switched-Capacitor RF Power Amplifier", IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. 46, no. 12, JPN6014039339, December 2011 (2011-12-01), US, pages 2977 - 2987, XP011379199, ISSN: 0003558770, DOI: 10.1109/JSSC.2011.2163469 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019220777A (ja) * | 2018-06-18 | 2019-12-26 | ルネサスエレクトロニクス株式会社 | 無線送信装置および無線通信装置 |
JP7015743B2 (ja) | 2018-06-18 | 2022-02-03 | ルネサスエレクトロニクス株式会社 | 無線送信装置および無線通信装置 |
Also Published As
Publication number | Publication date |
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JP6211325B2 (ja) | 2017-10-11 |
WO2015008449A1 (ja) | 2015-01-22 |
US20150194934A1 (en) | 2015-07-09 |
US9331635B2 (en) | 2016-05-03 |
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