JP2015023165A - Substrate cleaning device and substrate cleaning method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning device capable of preventing the reduction of the concentration which results from the presence of a rinse liquid used for cleaning a preceding substrate.SOLUTION: A substrate cleaning device includes: a substrate holding part 41 which rotates a substrate W holding the substrate W; a sponge cleaning tool 42 which contacts with a surface of the substrate W while rotating around its center axis; a chemical solution supply nozzle 47 which supplies a chemical solution to the surface of the substrate W; and a chemical solution supply mechanism 53 which directly supplies the chemical solution to the sponge cleaning tool 42.

Description

  The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a substrate with a sponge cleaning tool while supplying a chemical solution to the substrate such as a wafer. The substrate cleaning apparatus and the substrate cleaning method of the present invention can be applied not only to a wafer having a diameter of 300 mm but also to a wafer having a diameter of 450 mm, and further to a flat panel manufacturing process, an image sensor manufacturing process such as CMOS and CCD, and an MRAM. The present invention can also be applied to a magnetic film manufacturing process.

  In the manufacturing process of a semiconductor device, various films having different physical properties are formed on a silicon substrate, and fine metal wiring is formed by applying various processes to these films. For example, in a damascene wiring formation process, a wiring groove is formed in a film, a metal such as Cu is embedded in the wiring groove, and then a metal wiring is formed by removing excess metal by chemical mechanical polishing (CMP). The

  When the wafer is polished, polishing debris and slurry remain on the surface of the wafer. Therefore, after the wafer is polished, the wafer is cleaned by a substrate cleaning apparatus. The substrate cleaning apparatus rubs the surface of the wafer with a sponge cleaning tool such as a pen sponge or roll sponge while supplying a chemical solution to the surface of the wafer. A rinse liquid such as pure water is supplied to the surface.

JP 2002-43267 A JP 2010-74191 A

  However, when the next wafer is cleaned, the rinse liquid used in the previous wafer rinsing process may ooze out of the sponge cleaning tool and dilute the chemical on the wafer surface. For this reason, the concentration of the chemical solution is lowered at the interface between the sponge cleaning tool and the wafer surface, and the cleaning performance may be reduced.

  The present invention has been made to solve such problems, and a substrate cleaning apparatus and a substrate capable of preventing a decrease in concentration of a chemical solution due to the presence of a rinsing liquid used in the previous substrate cleaning. An object is to provide a cleaning method.

  In order to achieve the above-described object, one aspect of the present invention includes a substrate holding unit that holds and rotates a substrate, a sponge cleaning tool that contacts the surface of the substrate while rotating about its own central axis, A substrate cleaning apparatus comprising: a chemical solution supply nozzle that supplies a chemical solution to a surface of a substrate; and a chemical solution supply mechanism that directly supplies the chemical solution to the sponge cleaning tool.

In a preferred aspect of the present invention, the sponge cleaning tool has therein a chemical liquid flow path through which the chemical liquid flows.
In a preferred aspect of the present invention, the chemical solution supply mechanism supplies the chemical solution directly into the sponge cleaning tool.
In a preferred aspect of the present invention, a rinse liquid supply nozzle for supplying a rinse liquid to the surface of the substrate is further provided.

Another aspect of the present invention includes a substrate holding unit that holds and rotates a substrate, a sponge cleaning tool that contacts the surface of the substrate while rotating around its own central axis, a chemical solution tank that stores a chemical solution, A substrate cleaning apparatus comprising: a cleaning tool moving mechanism for moving a sponge cleaning tool to the chemical solution tank and further immersing the sponge cleaning tool in the chemical solution.
In a preferred aspect of the present invention, a rinse liquid supply nozzle for supplying a rinse liquid to the surface of the substrate is further provided.

In another aspect of the present invention, the chemical cleaning agent is supplied to the sponge cleaning tool for a predetermined time, and then the sponge cleaning tool is attached to the substrate while rotating the substrate around its central axis and supplying the chemical solution to the substrate. The substrate cleaning method is characterized by contacting the surface of the substrate.
In another aspect of the present invention, the sponge cleaning tool is immersed in the chemical solution for a predetermined time, and then the substrate is rotated around its central axis and the chemical solution is supplied to the substrate while the sponge cleaning tool is supplied to the substrate. The substrate cleaning method is characterized by contacting the surface of the substrate.

  According to the present invention, the rinse liquid used for cleaning the previous substrate can be removed from the sponge cleaning tool by supplying the chemical liquid to the sponge cleaning tool or immersing the sponge cleaning tool in the chemical liquid. . Therefore, at the time of the next cleaning of the substrate, it is possible to prevent a decrease in the concentration of the chemical solution on the substrate and maintain a stable cleaning performance.

It is a top view which shows the whole structure of the substrate processing apparatus provided with the substrate cleaning apparatus which concerns on embodiment of this invention. 1 is a perspective view showing a pen sponge type substrate cleaning apparatus according to an embodiment of the present invention. It is a schematic diagram which shows a part of board | substrate cleaning apparatus containing a chemical | medical solution supply mechanism. 4A is a cross-sectional view showing an example of a pen sponge, and FIG. 4B is a cross-sectional view taken along line AA in FIG. 4A. Fig.5 (a) is sectional drawing which shows the other example of pen sponge, FIG.5 (b) is BB sectional drawing of Fig.5 (a). 6A is a cross-sectional view showing still another example of the pen sponge, and FIG. 6B is a cross-sectional view taken along the line CC of FIG. 6A. FIG. 7A is a cross-sectional view showing still another example of a pen sponge, and FIG. 7B is a cross-sectional view taken along the line DD in FIG. 7A. FIG. 8A is a cross-sectional view showing still another example of a pen sponge, and FIG. 8B is a cross-sectional view taken along line EE of FIG. 8A. FIG. 9A is a cross-sectional view showing still another example of a pen sponge, and FIG. 9B is a cross-sectional view taken along line FF in FIG. 9A. It is a figure which shows other embodiment of a board | substrate cleaning apparatus. 11A is a cross-sectional view of the pen sponge shown in FIG. 10, and FIG. 11B is a top view of the pen sponge shown in FIG. It is a perspective view which shows other embodiment of a board | substrate cleaning apparatus. FIG. 13 is a side view of the substrate cleaning apparatus shown in FIG. 12. It is a perspective view which shows other embodiment of a board | substrate cleaning apparatus. It is a schematic diagram which shows the movement path | route of a roll sponge.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus including a substrate cleaning apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette for stocking substrates such as a large number of wafers is placed. The load port 12 is disposed adjacent to the housing 10. The load port 12 can be mounted with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall.

  Inside the housing 10, a plurality of (four in this embodiment) polishing units 14a to 14d, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the substrate after polishing, and a substrate after cleaning are dried. A drying unit 20 is accommodated. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus.

  In a region surrounded by the load port 12, the polishing unit 14a, and the drying unit 20, a first substrate transfer robot 22 is disposed, and a substrate transfer unit 24 is disposed in parallel with the polishing units 14a to 14d. The first substrate transfer robot 22 receives the substrate before polishing from the load port 12 and passes it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 and returns it to the load port 12. The substrate transport unit 24 transports the substrate received from the first substrate transport robot 22 and delivers the substrate to and from each of the polishing units 14a to 14d. Each polishing unit polishes the surface of a substrate by bringing a substrate such as a wafer into sliding contact with the polishing surface while supplying a polishing liquid (slurry) to the polishing surface.

  A second substrate transport robot 26 is disposed between the first cleaning unit 16 and the second cleaning unit 18 to transport the substrate between the cleaning units 16 and 18 and the substrate transport unit 24, and the second cleaning is performed. A third substrate transport robot 28 is disposed between the unit 18 and the drying unit 20 to transport the substrate between the units 18 and 20. Further, an operation control unit 30 that controls the movement of each unit of the substrate processing apparatus is disposed inside the housing 10.

  As the first cleaning unit 16, there is used a substrate cleaning apparatus that cleans a substrate by rubbing a roll sponge on both the front and back surfaces of the substrate in the presence of a chemical solution. As the second cleaning unit 18, a pen sponge type substrate cleaning apparatus according to an embodiment of the present invention is used. As the drying unit 20, a spin drying apparatus is used that holds a substrate, blows IPA vapor from a moving nozzle to dry the substrate, and further rotates the substrate at high speed to dry the substrate by centrifugal force.

  The substrate is polished by at least one of the polishing units 14a to 14d. The polished substrate is cleaned by the first cleaning unit 16 and the second cleaning unit 18, and the cleaned substrate is dried by the drying unit 20.

  FIG. 2 is a perspective view showing a pen sponge type substrate cleaning apparatus according to an embodiment of the present invention used in the second cleaning unit 18. As shown in FIG. 2, this type of substrate cleaning apparatus includes a substrate holder 41 that holds and rotates the wafer W, a pen sponge 42 that contacts the upper surface of the wafer W, and an arm 44 that holds the pen sponge 42. A rinsing liquid supply nozzle 46 that supplies a rinsing liquid (usually pure water) to the upper surface of the wafer W and a chemical liquid supply nozzle 47 that supplies a chemical liquid to the upper surface of the wafer W are provided. The pen sponge 42 is connected to a cleaning tool rotating mechanism (described later) disposed in the arm 44, and the pen sponge 42 is rotated around its central axis extending in the vertical direction.

  The substrate holder 41 includes a plurality of (four in FIG. 2) chucks 45 that hold the peripheral edge of the wafer W, and a motor 48 connected to the chucks 45. The chuck 45 holds the wafer W horizontally, and in this state, the wafer W is rotated around its central axis by a motor 48.

  The arm 44 is disposed above the wafer W. A pen sponge 42 is connected to one end of the arm 44, and a turning shaft 50 is connected to the other end of the arm 44. The pen sponge 42 is connected to the cleaning tool moving mechanism 51 via the arm 44 and the turning shaft 50. More specifically, a cleaning tool moving mechanism 51 that rotates the arm 44 is connected to the rotation shaft 50. The cleaning tool moving mechanism 51 turns the arm 44 in a plane parallel to the wafer W by rotating the turning shaft 50 by a predetermined angle. As the arm 44 turns, the pen sponge 42 supported by the arm 44 moves in the radial direction of the wafer W. Furthermore, the cleaning tool moving mechanism 51 is configured to be able to move the swivel shaft 50 up and down, whereby the pen sponge 42 can be pressed against the upper surface of the wafer W with a predetermined pressure.

  The wafer W is cleaned as follows. First, the wafer W is rotated around its central axis. Next, the chemical solution is supplied from the chemical solution supply nozzle 47 to the upper surface of the wafer W. In this state, the pen sponge 42 slides on the upper surface of the wafer W while rotating, and further swings in the radial direction of the wafer W. When the pen sponge 42 is in sliding contact with the upper surface of the wafer W in the presence of the chemical solution, the wafer W is scrubbed. After the scrub cleaning, in order to wash away the chemical solution from the wafer W, the rinse solution is supplied from the rinse solution supply nozzle 46 to the upper surface of the rotating wafer W.

  When the wafer W is rinsed with the rinse liquid, the rinse liquid penetrates into the pen sponge 42, and the rinse liquid is held in the pen sponge 42. When the next wafer is cleaned in this state, the chemical solution supplied to the upper surface of the wafer is diluted with the rinse liquid, which may reduce the cleaning performance. Therefore, in order to prevent such dilution of the chemical solution, a chemical solution supply mechanism 53 that supplies the chemical solution to the pen sponge 42 in advance before cleaning the wafer is provided.

  FIG. 3 is a schematic diagram showing a part of the substrate cleaning apparatus including the chemical solution supply mechanism 53. As shown in FIG. 3, the pen sponge 42 is fixed to the lower end of the support shaft 54. Further, the pen sponge 42 is connected to the cleaning tool rotating mechanism 55 via the support shaft 54, and the pen sponge 42 is rotated by the cleaning tool rotating mechanism 55 around its central axis extending in the vertical direction. ing.

  The chemical liquid supply mechanism 53 includes a chemical liquid supply source 57 and a supply pipe 58 extending from the chemical liquid supply source 57 to the pen sponge 42. The support shaft 54 is composed of a hollow shaft, and a part of the supply pipe 58 extends through the internal space of the support shaft 54. The tip of the supply pipe 58 is disposed immediately above the pen sponge 42, and the chemical solution is supplied to the pen sponge 42 from above. The pen sponge 42 is made of a porous material such as foamed polyurethane or PVA (polyvinyl alcohol), and allows a chemical solution to pass through the inside.

  The chemical liquid is directly supplied from the chemical liquid supply source 57 through the supply pipe 58 to the pen sponge 42 before the next wafer cleaning is started. The chemical solution spreads throughout the pen sponge 42 and removes the rinse solution used in the previous wafer cleaning from the pen sponge 42. Once the rinse liquid is removed from the pen sponge 42, the chemical liquid supplied to the next wafer is not diluted with the rinse liquid. Therefore, the concentration of the chemical solution is stabilized and the cleaning performance is prevented from being lowered.

  4A is a cross-sectional view showing an example of the pen sponge 42, and FIG. 4B is a cross-sectional view taken along line AA of FIG. 4A. The pen sponge 42 has a chemical liquid channel 60 therein. The chemical liquid flow channel 60 extends in the vertical direction on the central axis of the pen sponge 42 and penetrates the pen sponge 42. The distal end of the supply pipe 58 is located immediately above the upper opening of the chemical liquid flow path 60, and the chemical liquid is directly supplied to the chemical liquid flow path 60. That is, the chemical solution is directly supplied into the pen sponge 42. The chemical liquid quickly spreads over the entire pen sponge 42 while flowing through the chemical liquid flow path 60, and removes the rinse liquid used in the previous wafer cleaning from the pen sponge 42.

  FIG. 5A is a cross-sectional view showing another example of the pen sponge 42, and FIG. 5B is a cross-sectional view taken along the line BB of FIG. 5A. The chemical liquid channel 60 in this example is the same as the chemical liquid channel 60 shown in FIGS. 4 (a) and 4 (b) in that it extends on the central axis of the pen sponge 42, but the lower end is closed. Is different.

  6A is a cross-sectional view showing still another example of the pen sponge 42, and FIG. 6B is a cross-sectional view taken along the line CC of FIG. 6A. In this example, the chemical liquid flow channel 60 is composed of a plurality of through holes 60 a extending in parallel with the central axis of the pen sponge 42. These through holes 60 a are not formed on the central axis of the pen sponge 42, but are arranged around the central axis of the pen sponge 42.

  Fig.7 (a) is sectional drawing which shows the further another example of the pen sponge 42, FIG.7 (b) is DD sectional view taken on the line of Fig.7 (a). In this example, the chemical liquid channel 60 is composed of a plurality of vertical holes 60b extending in parallel with the central axis of the pen sponge 42, and the upper ends of the vertical holes 60b are opened and the lower ends are closed. The arrangement of the vertical holes 60b is the same as the arrangement of the through holes 60a shown in FIGS. 6 (a) and 6 (b).

  FIG. 8A is a cross-sectional view showing still another example of the pen sponge 42, and FIG. 8B is a cross-sectional view taken along line EE of FIG. 8A. In this example, the chemical liquid flow channel 60 includes a plurality of first through holes 60c extending in parallel with the central axis of the pen sponge 42 and a plurality of second through holes 60d perpendicular to the first through holes 60c. It is configured. The second through hole 60d is opened on the outer peripheral surface of the pen sponge 42. The second through holes 60d communicate with the first through holes 60c, respectively. The arrangement of the first through holes 60c is the same as the arrangement of the through holes 60a shown in FIGS. 6 (a) and 6 (b).

  FIG. 9A is a cross-sectional view showing still another example of the pen sponge 42, and FIG. 9B is a cross-sectional view taken along the line FF of FIG. 9A. In this example, the chemical liquid flow channel 60 includes a plurality of vertical holes 60e extending in parallel with the center axis of the pen sponge 42 and a plurality of horizontal holes 60f perpendicular to the vertical holes 60e. The upper end of each vertical hole 60e is opened, and the lower end is closed. Both ends of each lateral hole 60f are closed. The horizontal holes 60f communicate with the vertical holes 60e, respectively. The arrangement of the vertical holes 60e is the same as the arrangement of the through holes 60a shown in FIGS. 6 (a) and 6 (b).

  4 (a) to 9 (b) can quickly spread the chemical liquid throughout the pen sponge 42 and quickly remove the rinse liquid present in the chemical liquid flow path 60. FIG. be able to.

  Next, a wafer cleaning method using the substrate cleaning apparatus shown in FIG. 2 will be described. When the pen sponge 42 is in the retracted position on the outer side in the radial direction of the wafer W, the chemical solution supply mechanism 53 described above supplies the chemical solution to the pen sponge 42 for a predetermined time to remove the rinse solution from the pen sponge 42. . It is preferable to supply the chemical liquid to the pen sponge 42 while rotating the pen sponge 42. Next, the wafer W is rotated around its central axis, and the chemical liquid is supplied from the chemical liquid supply nozzle 47 to the upper surface of the wafer W. In this state, the pen sponge 42 is brought into contact with the surface of the wafer W while the pen sponge 42 is rotated about its central axis.

  Further, the surface of the wafer W is scrubbed by moving the pen sponge 42 back and forth in the radial direction of the wafer W while maintaining the contact between the pen sponge 42 and the wafer W. Next, while the supply of the chemical solution is stopped, the rinse liquid is supplied to the surface of the wafer W, and the surface of the wafer W is rinsed. After the rinsing of the wafer W is completed, the rotation of the wafer W and the pen sponge 42 is stopped, and the pen sponge 42 is moved to the retracted position outside the wafer W.

  FIG. 10 is a view showing still another embodiment of the substrate cleaning apparatus. In this embodiment, the supply pipe 58 is disposed outside the support shaft 54. The distal end of the supply pipe 58 is disposed immediately above the pen sponge 42 so that the chemical solution is supplied to the upper surface of the pen sponge 42.

  11A is a cross-sectional view of the pen sponge 42 shown in FIG. 10, and FIG. 11B is a top view of the pen sponge 42 shown in FIG. The chemical liquid channel 60 of the pen sponge 42 includes an annular groove 60g formed on the upper surface of the pen sponge 42 and a plurality of vertical holes 60h connected to the annular groove 60g. Each vertical hole 60h shown in the drawing penetrates the pen sponge 42, but the lower end thereof may be closed. The tip of the supply pipe 58 is located immediately above the annular groove 60g, so that the chemical solution is supplied into the annular groove 60g. The chemical solution reaches the entire pen sponge 42 while flowing through the annular groove 60g and the plurality of vertical holes 60h, and the rinse solution is removed from the pen sponge 42.

  FIG. 12 is a perspective view showing still another embodiment of the substrate cleaning apparatus, and FIG. 13 is a side view of the substrate cleaning apparatus shown in FIG. The substrate cleaning apparatus according to this embodiment includes a chemical solution tank 64 that stores a chemical solution instead of the chemical solution supply mechanism 53. The chemical tank 64 is disposed adjacent to the substrate holding part 41. The chemical solution tank 64 is connected to a chemical solution supply source 57, and the chemical solution is supplied from the chemical solution supply source 57 to the chemical solution tank 64. The cleaning tool moving mechanism 51 operates to move the pen sponge 42 to the chemical solution tank 64 and further immerse the pen sponge 42 in the chemical solution in the chemical solution tank 64.

  The pen sponge 42 is moved to the chemical solution tank 64 by the cleaning tool moving mechanism 51 before the next wafer cleaning starts. Then, the pen sponge 42 is immersed in the chemical solution in the chemical solution tank 64 for a predetermined time, whereby the rinse solution used in the previous wafer cleaning is removed from the pen sponge 42. Therefore, the chemical solution supplied to the next wafer is not diluted with the rinse solution, and a stable cleaning performance is obtained.

  FIG. 14 is a perspective view showing still another embodiment of the substrate cleaning apparatus. In this embodiment, a roll sponge extending in the horizontal direction is used as the sponge cleaning tool. The substrate cleaning apparatus includes four holding rollers 71, 72, 73, and 74 that horizontally hold and rotate the wafer W, cylindrical roll sponges 77 and 78 that contact the upper and lower surfaces of the wafer W, and these roll sponges. Cleaning tool rotating mechanisms 80 and 81 for rotating the 77 and 78 around the central axis thereof, an upper rinsing liquid supply nozzle 85 for supplying a rinsing liquid (for example, pure water) to the upper surface of the wafer W, and a chemical liquid on the upper surface of the wafer W. And an upper chemical solution supply nozzle 87 for supplying. Although not shown, a lower rinsing liquid supply nozzle that supplies a rinsing liquid (for example, pure water) to the lower surface of the wafer W and a lower chemical liquid supply nozzle that supplies a chemical liquid to the lower surface of the wafer W are provided.

  The holding rollers 71, 72, 73, 74 can be moved in the direction of approaching and separating from the wafer W by a driving mechanism (for example, an air cylinder) (not shown). Of the four holding rollers, two holding rollers 71 and 74 are connected to a substrate rotating mechanism 75, and these holding rollers 71 and 74 are rotated in the same direction by the substrate rotating mechanism 75. With the four holding rollers 71, 72, 73, 74 holding the wafer W, the two holding rollers 71, 74 rotate, whereby the wafer W rotates about its central axis. In the present embodiment, the substrate holding unit that holds and rotates the wafer W includes the holding rollers 71, 72, 73, and 74 and the substrate rotating mechanism 75.

  A cleaning tool rotating mechanism 80 that rotates the upper roll sponge 77 is attached to a guide rail 89 that guides the vertical movement thereof. The cleaning tool rotating mechanism 80 is supported by an elevating drive mechanism 82, and the cleaning tool rotating mechanism 80 and the upper roll sponge 77 are moved up and down by the elevating drive mechanism 82. The elevating drive mechanism 82 is connected to the horizontal moving mechanism 90, and the roll sponge 77 and the elevating drive mechanism 82 are moved in the horizontal direction.

  Although not shown, the cleaning tool rotating mechanism 81 for rotating the lower roll sponge 78 is also supported by the guide rail, and the cleaning tool rotating mechanism 81 and the lower roll sponge 78 are moved up and down by the lift drive mechanism. ing. Further, the roll sponge 78 and the lift drive mechanism are moved in the horizontal direction by a horizontal movement mechanism (not shown). As the lifting drive mechanism, for example, a motor drive mechanism using a ball screw or an air cylinder is used. At the time of cleaning the wafer W, the roll sponges 77 and 78 move in directions close to each other and come into contact with the upper and lower surfaces of the wafer W.

  The substrate cleaning apparatus includes a chemical solution tank 64 for immersing the roll sponges 77 and 78 in the chemical solution. The chemical tank 64 is disposed adjacent to the holding rollers 71, 72, 73 and 74. The cleaning tool moving mechanism composed of the horizontal moving mechanism 90 and the elevation drive mechanism 82 moves the roll sponge 77 to the chemical solution tank 64 as shown in FIG. Operates to soak for hours. Similarly, a cleaning tool moving mechanism composed of a horizontal moving mechanism and a lift drive mechanism (both not shown) moves the roll sponge 78 to the chemical tank 64 and further converts the roll sponge 78 into the chemical liquid in the chemical tank 64. It operates to soak for a predetermined time.

  Next, a process for cleaning the wafer will be described. First, as described above, the roll sponge 77 is moved to the chemical solution tank 64, and the roll sponge 77 is immersed in the chemical solution in the chemical solution tank 64 for a predetermined time, whereby the rinse liquid used for cleaning the previous wafer is rolled. Exclude from sponge 77. Subsequently, the roll sponge 78 is moved to the chemical solution tank 64, and the roll sponge 78 is immersed in the chemical solution in the chemical solution tank 64 for a predetermined time, thereby removing the rinse solution used for cleaning the previous wafer from the roll sponge 78. To do.

  The wafer W is rotated around its central axis by the holding rollers 71, 72, 73 and 74. Next, the chemical solution is supplied to the upper and lower surfaces of the wafer W from the upper chemical solution supply nozzle 87 and the lower chemical solution supply nozzle (not shown). In this state, the upper and lower surfaces of the wafer W are scrubbed by the roll sponges 77 and 78 slidably contacting the upper and lower surfaces of the wafer W while rotating around the horizontally extending central axis. The roll sponges 77 and 78 are longer than the diameter (width) of the wafer W and are in contact with the entire upper and lower surfaces of the wafer W. After the scrub cleaning, the wafer W is rinsed by supplying a rinsing liquid to the upper and lower surfaces of the rotating wafer W while bringing the roll sponges 77 and 78 into sliding contact with the upper and lower surfaces of the wafer W.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and may be implemented in various forms within the scope of the technical idea.

10 Housing 12 Load Ports 14a to 14d Polishing Unit 16 First Cleaning Unit 18 Second Cleaning Unit 20 Drying Unit 22 First Substrate Transfer Robot 24 Substrate Transfer Unit 26 Second Substrate Transfer Robot 28 Third Substrate Transfer Robot 30 Operation Control Unit 41 Substrate holder 42 Pen sponge 44 Arm 45 Chuck 46 Rinse liquid supply nozzle 47 Chemical liquid supply nozzle 48 Motor 50 Rotating shaft 51 Cleaning tool moving mechanism 53 Chemical liquid supply mechanism 54 Support shaft 55 Cleaning tool rotation mechanism 57 Chemical liquid supply source 58 Supply pipe 60 Chemical liquid Flow path 64 Chemical solution tanks 71 to 74 Holding roller 75 Substrate rotation mechanism 77, 78 Roll sponge 80, 81 Cleaning tool rotation mechanism 82 Elevating drive mechanism 85 Rinsing liquid supply nozzle 87 Chemical liquid supply nozzle 89 Guide rail 90 Horizontal movement mechanism

Claims (8)

A substrate holder for holding and rotating the substrate;
A sponge cleaning tool that contacts the surface of the substrate while rotating about its own central axis;
A chemical supply nozzle for supplying a chemical to the surface of the substrate;
A substrate cleaning apparatus comprising: a chemical solution supply mechanism that directly supplies the chemical solution to the sponge cleaning tool.   The substrate cleaning apparatus according to claim 1, wherein the sponge cleaning tool includes a chemical liquid flow path through which the chemical liquid flows.   The substrate cleaning apparatus according to claim 1, wherein the chemical solution supply mechanism directly supplies a chemical solution into the sponge cleaning tool.   The substrate cleaning apparatus according to claim 1, further comprising a rinse liquid supply nozzle that supplies a rinse liquid to a surface of the substrate. A substrate holder for holding and rotating the substrate;
A sponge cleaning tool that contacts the surface of the substrate while rotating about its own central axis;
A chemical tank for storing the chemical,
A substrate cleaning apparatus comprising: a cleaning tool moving mechanism for moving the sponge cleaning tool to the chemical solution tank and further immersing the sponge cleaning tool in the chemical solution.   The substrate cleaning apparatus according to claim 5, further comprising a rinse liquid supply nozzle that supplies a rinse liquid to a surface of the substrate. Supply the chemical solution to the sponge cleaning tool for a predetermined time, then
A substrate cleaning method, wherein the sponge cleaning tool is brought into contact with the surface of the substrate while rotating the substrate around its central axis and supplying the chemical solution to the substrate. Immerse the sponge cleaning tool in the chemical for a predetermined time, then
A substrate cleaning method, wherein the sponge cleaning tool is brought into contact with the surface of the substrate while rotating the substrate around its central axis and supplying the chemical solution to the substrate.

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