JPH0871511A - Cleaning and its device - Google Patents
Cleaning and its deviceInfo
- Publication number
- JPH0871511A JPH0871511A JP7129588A JP12958895A JPH0871511A JP H0871511 A JPH0871511 A JP H0871511A JP 7129588 A JP7129588 A JP 7129588A JP 12958895 A JP12958895 A JP 12958895A JP H0871511 A JPH0871511 A JP H0871511A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- substrate
- cleaned
- scrub
- tool
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 242
- 239000002245 particle Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229920002635 polyurethane Polymers 0.000 claims abstract description 19
- 239000004814 polyurethane Substances 0.000 claims abstract description 19
- 239000011148 porous material Substances 0.000 claims abstract description 19
- 238000005498 polishing Methods 0.000 claims description 83
- 239000004065 semiconductor Substances 0.000 claims description 71
- 239000004744 fabric Substances 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 35
- 239000000835 fiber Substances 0.000 claims description 11
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 10
- 239000004745 nonwoven fabric Substances 0.000 claims description 9
- 239000004094 surface-active agent Substances 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000008119 colloidal silica Substances 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 229920005830 Polyurethane Foam Polymers 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 239000011496 polyurethane foam Substances 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000012670 alkaline solution Substances 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims 1
- 229920003002 synthetic resin Polymers 0.000 claims 1
- 239000000057 synthetic resin Substances 0.000 claims 1
- 238000005201 scrubbing Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 88
- 230000000694 effects Effects 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007790 scraping Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 4
- 229920002451 polyvinyl alcohol Polymers 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 210000000050 mohair Anatomy 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 229920006306 polyurethane fiber Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は洗浄方法および装置に係
り、特に半導体ウエハ、ガラス基板、液晶パネル等の高
度の清浄度が要求される基板を洗浄するのに好適な洗浄
方法および装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method and apparatus, and more particularly to a cleaning method and apparatus suitable for cleaning a substrate such as a semiconductor wafer, a glass substrate, a liquid crystal panel or the like which requires a high degree of cleanliness.
【０００２】[0002]
【従来の技術】近年、半導体デバイスの高集積化が進む
につれて半導体基板上の回路の配線が微細化し、配線間
距離もより狭くなりつつある。しかしながら、半導体ウ
エハの処理にあたっては、半導体片の微粒子、塵埃等の
パーティクルが付着する場合がある。また、半導体ウエ
ハ表面に結晶状の突起が残る場合がある。半導体基板上
に配線間距離より大きなパーティクルが存在すると、配
線がショートするなどの不具合が生じるため、基板上に
存在するパーティクルは配線間距離に比べて十分小さい
ものでなければならない。このような事情は、マスク等
に用いるガラス基板、或いは液晶パネル等の基板のプロ
セス処理においても同様である。このような要求に伴
い、より微細なサブミクロンレベルのパーティクルを半
導体ウエハ等から落とす洗浄技術が必要とされている。2. Description of the Related Art In recent years, as the degree of integration of semiconductor devices has increased, the wiring of circuits on a semiconductor substrate has become finer and the distance between the wirings has become smaller. However, in processing a semiconductor wafer, particles such as fine particles of a semiconductor piece and dust may adhere. In addition, crystalline protrusions may remain on the surface of the semiconductor wafer. If particles larger than the inter-wiring distance exist on the semiconductor substrate, the wiring may be short-circuited. Therefore, the particles on the substrate must be sufficiently smaller than the inter-wiring distance. Such a circumstance also applies to the process treatment of a glass substrate used for a mask or the like, or a substrate such as a liquid crystal panel. With such demands, a cleaning technique for removing finer submicron-level particles from a semiconductor wafer or the like is required.
【０００３】[0003]
【発明が解決しようとする課題】従来、例えば半導体ウ
エハを洗浄する洗浄方法は、ブラシやスポンジによるス
クラブ洗浄が行われている。従来のナイロン、モヘア等
のブラシによるスクラブ洗浄では、パーティクル径が１
μｍ程度のものまでは落とすことができるが、それ以下
のサブミクロンレベルのパーティクルには洗浄効果があ
らわれないという問題点があった。Conventionally, as a cleaning method for cleaning a semiconductor wafer, for example, scrub cleaning with a brush or a sponge is performed. When scrubbing with a conventional brush of nylon or mohair, the particle size is 1
Although particles of about μm can be dropped, there is a problem that cleaning effects do not appear for submicron-level particles below that.
【０００４】また、ＰＶＡ（ポリビニルアルコール）ス
ポンジによるスクラブ洗浄では粒子径が０．２μｍ程度
のパーティクルを落とすことができるが、ウエハとパー
ティクルの結合力が強い場合には洗浄効果があらわれな
いという問題点があった。また、ＰＶＡスポンジによる
スクラブ洗浄ではパーティクルをスポンジに取り込んで
しまうため、スポンジ自体の自己洗浄（以下セルフクリ
ーニングと称す）が困難であるという問題点があった。Further, scrub cleaning with a PVA (polyvinyl alcohol) sponge can remove particles having a particle diameter of about 0.2 μm, but if the bonding force between the wafer and the particles is strong, the cleaning effect does not appear. was there. Further, in scrub cleaning with a PVA sponge, since particles are taken into the sponge, there is a problem that it is difficult to self-clean the sponge itself (hereinafter referred to as self-cleaning).
【０００５】また、特に半導体製造工程の１つであるポ
リッシング処理に適用されている技術として、”水ポリ
ッシュ”と呼ばれる方法が知られている。ポリッシング
処理とは基板表面に種々の層を積層した場合に生じる基
板表面の凹凸を平坦にするための処理である。Further, a method called "water polishing" is known as a technique applied particularly to a polishing process which is one of semiconductor manufacturing processes. The polishing treatment is a treatment for flattening the unevenness of the substrate surface which occurs when various layers are laminated on the substrate surface.
【０００６】ポリッシング装置は上面に研磨布を貼り付
けたターンテーブルと、ポリッシングすべき半導体ウエ
ハを保持したトップリングとからなる。トップリングに
よって半導体ウエハのポリッシング面を研磨布に対して
押圧するとともに、ターンテーブルおよびトップリング
を回転させることにより研磨布と半導体ウエハを相対運
動させ、さらに研磨布上に砥液を供給することにより、
半導体ウエハを平坦かつ鏡面状に研磨するものである。The polishing apparatus comprises a turntable having a polishing cloth attached to the upper surface thereof and a top ring holding a semiconductor wafer to be polished. By pressing the polishing surface of the semiconductor wafer against the polishing cloth with the top ring, rotating the turntable and the top ring to move the polishing cloth and the semiconductor wafer relative to each other, and further supplying the polishing liquid onto the polishing cloth. ,
A semiconductor wafer is polished flat and mirror-like.
【０００７】”水ポリッシュ”とは上述したポリッシン
グを行った後、研磨布上に砥液に代えて水を供給するこ
とにより、仕上げ研磨を行い、ポリッシング面の表面粗
さを整えることである。この方法の副次的な利点とし
て、ポリッシング時に付着した砥液が半導体ウエハから
洗い流される効果が知られている。The term "water polish" means that after the above-mentioned polishing is performed, water is supplied to the polishing cloth instead of the polishing liquid to perform the final polishing to adjust the surface roughness of the polishing surface. As a secondary advantage of this method, it is known that the polishing liquid adhered during polishing is washed away from the semiconductor wafer.
【０００８】しかしながら、この方法はポリッシング後
に行うため、研磨布上には使用された砥液、半導体ウエ
ハの削り屑、研磨布の摩耗片等が存在し、これらが再付
着するという問題点があり、パーティクルの付着量を近
年の半導体製造プロセスの厳しい管理レベルまで下げる
ことは、この方法だけでは困難である。また、この方法
はポリッシング処理に限定されるため、その他の半導体
製造プロセスには適用できず、汎用性がないという問題
点があった。However, since this method is carried out after polishing, there is a problem in that the used polishing liquid, shavings of semiconductor wafers, and abrasion pieces of the polishing cloth are present on the polishing cloth, and these adhere again. However, it is difficult to reduce the amount of adhered particles to a strict control level in recent semiconductor manufacturing processes only by this method. Further, since this method is limited to polishing processing, it cannot be applied to other semiconductor manufacturing processes, and there is a problem that it is not versatile.
【０００９】本発明は上述の事情に鑑みなされたもの
で、サブミクロンレベルのパーティクルに対して効果的
な洗浄を行うことができ、また、基板表面に頑強に付着
しているパーティクルや表面の微細な傷（マイクロスク
ラッチ）を表面を薄く削り取ることによって除去し、さ
らに洗浄時はパーティクルを保持し洗浄後にセルフクリ
ーニングが容易な洗浄方法およびその装置を提供するこ
とを目的とする。The present invention has been made in view of the above-mentioned circumstances, and is capable of effectively cleaning submicron-level particles, and further, the particles firmly adhered to the surface of the substrate and the fine particles of the surface. It is an object of the present invention to provide a cleaning method and an apparatus thereof, which removes scratches (micro scratches) by thinly scraping the surface, retains particles during cleaning, and facilitates self-cleaning after cleaning.
【００１０】[0010]
【課題を解決するための手段】上述した目的を達成する
ために、本発明は、被洗浄物との接触面に平均細孔サイ
ズで１０から２００μｍの微細な孔を有するポリウレタ
ンを主成分とする部材を被洗浄物に当接させてスクラブ
洗浄することを特徴とする。In order to achieve the above-mentioned object, the present invention mainly comprises polyurethane having fine pores having an average pore size of 10 to 200 μm on the contact surface with the article to be cleaned. It is characterized in that the member is brought into contact with the object to be cleaned for scrub cleaning.
【００１１】[0011]
【作用】前述した構成からなる本発明によれば、半導体
ウエハ等の基板上に存在するサブミクロンレベルのパー
ティクルを落とし、より清浄度の高い半導体ウエハ等を
供給することができる。また、半導体ウエハ等の基板上
に頑強に付着しているパーティクルを容易に除去するこ
とができる。さらに、洗浄と同時に被洗浄物の洗浄面の
凹凸や結晶状の突起を削り取って洗浄面の面粗度を整
え、平滑にすることができる。更にまた、洗浄後のセル
フクリーニングを容易に行うことができる。According to the present invention having the above-described structure, it is possible to drop submicron-level particles existing on a substrate such as a semiconductor wafer and to supply a semiconductor wafer having a higher degree of cleanliness. In addition, it is possible to easily remove particles that are strongly adhered to the substrate such as a semiconductor wafer. Further, at the same time as the cleaning, the surface roughness of the cleaning surface can be adjusted to be smooth by scraping off the irregularities and the crystalline protrusions of the cleaning surface of the object to be cleaned. Furthermore, self-cleaning after cleaning can be easily performed.
【００１２】[0012]
【実施例】以下、本発明に係る洗浄方法および装置の実
施例を図１乃至図７に基づいて説明する。図１は本発明
の洗浄方法を実施する洗浄装置の斜視図である。本発明
の装置は、半導体ウエハ１を保持して所要の回転数で水
平回転するスピンチャック２と、表面に微細な孔が形成
された発泡ポリウレタンからなる洗浄部材を貼り付けた
回転可能な洗浄具６と、先端に前記洗浄具を有する昇降
可能な揺動アーム７と、半導体ウエハ１の被洗浄面に洗
浄液を噴射する洗浄液ノズル８と、洗浄具を洗浄する洗
浄カップ９とから構成されている。洗浄具６は回転軸１
０により揺動アーム７の先端部分に支持され、所定回転
数で回転するようになっている。Embodiments of the cleaning method and apparatus according to the present invention will be described below with reference to FIGS. FIG. 1 is a perspective view of a cleaning device for carrying out the cleaning method of the present invention. The apparatus of the present invention comprises a spin chuck 2 which holds a semiconductor wafer 1 and horizontally rotates at a required number of rotations, and a rotatable cleaning tool in which a cleaning member made of foamed polyurethane having fine holes formed on its surface is attached. 6, a swingable arm 7 having the cleaning tool at its tip, which can be moved up and down, a cleaning solution nozzle 8 for spraying a cleaning solution onto the surface to be cleaned of the semiconductor wafer 1, and a cleaning cup 9 for cleaning the cleaning tool. . Cleaning tool 6 is rotating shaft 1
It is supported by the tip portion of the swing arm 7 by 0, and is rotated at a predetermined rotation speed.
【００１３】半導体ウエハはリンス洗浄又はブラシ洗浄
によるスクラブ洗浄の工程を経て、比較的大きなパーテ
ィクルを落とした後、本実施例の洗浄装置に搬入され
る。半導体ウエハ１の被洗浄面を上向きに露出してスピ
ンチャック２に保持される。保持された半導体ウエハ１
を所定回転数で回転させると同時に洗浄液ノズル８から
洗浄液を半導体ウエハ１の中心に向けて噴射する。The semiconductor wafer is subjected to a scrub cleaning process by rinsing cleaning or brush cleaning to remove relatively large particles, and then carried into the cleaning apparatus of this embodiment. The surface to be cleaned of the semiconductor wafer 1 is exposed upward and held by the spin chuck 2. Semiconductor wafer 1 held
Is rotated at a predetermined number of rotations, and at the same time, the cleaning liquid is sprayed from the cleaning liquid nozzle 8 toward the center of the semiconductor wafer 1.
【００１４】揺動アーム７は洗浄具６を洗浄カップ９内
に納めた下降位置を初期位置とし、洗浄具６は洗浄液が
満たされた洗浄カップ９内で回転し、セルフクリーニン
グを行うようになっている。初期位置にある揺動アーム
７は洗浄具６の回転を停止して、上昇し、アーム先端部
の洗浄具６を洗浄カップ９から取り出し、半導体ウエハ
１の中心までアーム７を移動させた後、アーム７の下降
によって洗浄具６に貼り付けた洗浄部材３を半導体ウエ
ハ１の被洗浄面に押しつける。この時、洗浄具６は半導
体ウエハ１に接触する直前に所定回転数で回転を始め
る。The swinging arm 7 is set at a lowered position where the cleaning tool 6 is housed in the cleaning cup 9 as an initial position, and the cleaning tool 6 is rotated in the cleaning cup 9 filled with the cleaning liquid to perform self-cleaning. ing. The swing arm 7 in the initial position stops the rotation of the cleaning tool 6 and ascends to take out the cleaning tool 6 at the tip of the arm from the cleaning cup 9, and after moving the arm 7 to the center of the semiconductor wafer 1, By lowering the arm 7, the cleaning member 3 attached to the cleaning tool 6 is pressed against the surface to be cleaned of the semiconductor wafer 1. At this time, the cleaning tool 6 starts rotating at a predetermined rotation speed immediately before coming into contact with the semiconductor wafer 1.
【００１５】スピンチャック２で支持され回転する半導
体ウエハ１の被洗浄面に接触して、独立に回転軸１０の
回りに回転する洗浄部材３を揺動アーム７によって半導
体ウエハ１に押しあて、洗浄部材３を半導体ウエハの中
心部から外周部まで所定の速度で揺動させてスクラブ洗
浄する。ウエハ外周まで揺動したアーム７を揺動停止
後、上昇させ洗浄部材３を半導体ウエハ１の被洗浄面か
ら離し、１サイクルの動作とする。上記洗浄動作はウエ
ハ外周部で上昇位置にあるアーム７を再びウエハ中心位
置に移動させることにより繰り返し行うことができる。The cleaning member 3 which is supported by the spin chuck 2 and contacts the surface to be cleaned of the rotating semiconductor wafer 1 and independently rotates around the rotation axis 10 is pressed against the semiconductor wafer 1 by the swing arm 7 to clean the same. The member 3 is swung at a predetermined speed from the central portion of the semiconductor wafer to the outer peripheral portion, and scrub cleaning is performed. After the arm 7 that has swung to the outer periphery of the wafer stops swinging, the arm 7 is lifted and the cleaning member 3 is separated from the surface to be cleaned of the semiconductor wafer 1 to perform one cycle of operation. The cleaning operation can be repeated by moving the arm 7 in the raised position on the outer peripheral portion of the wafer to the wafer center position again.
【００１６】上記動作を１回以上行った後、洗浄液ノズ
ル８からの洗浄液を停止し、揺動アーム７を移動させて
洗浄具６を洗浄カップ９の上方位置まで移動した後、下
降させて洗浄具６を洗浄カップ内で回転させてセルフク
リーニングして洗浄動作が終了する。After performing the above operation once or more, the cleaning liquid from the cleaning liquid nozzle 8 is stopped, the swinging arm 7 is moved to move the cleaning tool 6 to a position above the cleaning cup 9, and then the cleaning tool 6 is lowered to perform cleaning. The tool 6 is rotated in the cleaning cup to self-clean, and the cleaning operation is completed.
【００１７】洗浄が終了した直後に、乾燥した不活性ガ
ス雰囲気中で、スピンチャック２を高速で回転させるこ
とにより、洗浄した半導体ウエハ１をスピン乾燥する。
揺動アーム７を半導体ウエハ１の中心位置から外周部へ
と移動して洗浄するのは、半導体ウエハ１がスピンチャ
ック２によって回転させられ、ウエハ上面に存在する汚
染物質やパーティクルは回転による遠心力を受けるた
め、遠心力が働く方向と同じ方向へ掻き出すためであ
る。Immediately after the cleaning, the spin chuck 2 is rotated at a high speed in a dry inert gas atmosphere to spin-dry the cleaned semiconductor wafer 1.
The oscillating arm 7 is moved from the central position of the semiconductor wafer 1 to the outer peripheral portion for cleaning, because the semiconductor wafer 1 is rotated by the spin chuck 2, and the contaminants and particles existing on the upper surface of the wafer are centrifugal force generated by the rotation. This is because it is scratched in the same direction as the centrifugal force acts.
【００１８】図２は本発明の洗浄装置の洗浄具の縦断面
図である。洗浄具６は回転軸１０の下端に取り付けられ
ており、洗浄具６はカートリッジ１１とカートリッジ１
１の下面に貼着された洗浄部材３とから構成されてい
る。洗浄部材３はポリッシング用の研磨布を用い、適当
な大きさに切ってカートリッジ１１の下面に貼り付けら
れている。ポリッシング用の研磨布はその裏面が接着可
能なシールになっているためこれを利用して貼り付け
る。カートリッジ１１は回転軸１０と球面で接触してお
り、研磨布は半導体ウエハが傾いても均一に接触するよ
うに構成されている。FIG. 2 is a vertical sectional view of a cleaning tool of the cleaning apparatus of the present invention. The cleaning tool 6 is attached to the lower end of the rotary shaft 10, and the cleaning tool 6 includes the cartridge 11 and the cartridge 1.
The cleaning member 3 is attached to the bottom surface of the cleaning member 1. The cleaning member 3 is made of a polishing cloth for polishing, cut into an appropriate size, and attached to the lower surface of the cartridge 11. The polishing cloth for polishing has a sticker on its back surface, which is used for sticking. The cartridge 11 is in spherical contact with the rotary shaft 10, and the polishing cloth is configured to make uniform contact even when the semiconductor wafer is tilted.
【００１９】さらに、回転軸１０は上下２分割の上部回
転軸１０Ａと下部回転軸１０Ｂとから構成されており、
上下部回転軸１０Ａ，１０Ｂはその間に圧縮コイルバネ
１２を介して連結されている。このバネ１２は洗浄具６
が半導体ウエハ１に接触しているときに、半導体ウエハ
１に加わる力を緩衝する働きをする。このため、洗浄中
に洗浄具６の洗浄面を半導体ウエハ面に均一な圧力で接
触させることができる。また、ウエハの傾き等によって
洗浄具からウエハに過剰な力が加わってウエハを破損す
ることを防止することができる。Further, the rotary shaft 10 is composed of an upper rotary shaft 10A and a lower rotary shaft 10B which are divided into upper and lower parts.
The upper and lower rotary shafts 10A and 10B are connected via a compression coil spring 12 therebetween. This spring 12 is a cleaning tool 6
Has a function of buffering a force applied to the semiconductor wafer 1 when the semiconductor wafer 1 is in contact with the semiconductor wafer 1. Therefore, the cleaning surface of the cleaning tool 6 can be brought into contact with the semiconductor wafer surface with uniform pressure during cleaning. Further, it is possible to prevent the wafer from being damaged due to an excessive force applied from the cleaning tool to the wafer due to the inclination of the wafer or the like.
【００２０】ここで用いた洗浄部材３は一般的に、半導
体ウエハを鏡面かつ平坦に研磨するポリッシングに用い
られている研磨布であり、市場で入手できるものであ
る。例えば、ロデール社製のＳｕｂａ８００やＩＣ−１
０００、フジミインコーポレイテッド社製のＳｕｒｆｉ
ｎ ｘｘｘ−５，Ｓｕｒｆｉｎ ０００等である。Ｓｕ
ｂａ８００，Ｓｕｒｆｉｎ ｘｘｘ−５，Ｓｕｒｆｉｎ
０００は繊維をウレタン樹脂で固めた不織布であり、
ＩＣ−１０００は発泡ポリウレタンである。発泡ポリウ
レタンは、ポーラス（多孔質状）になっており、その表
面に多数の微細なへこみ又は孔を有している。The cleaning member 3 used here is generally a polishing cloth used for polishing for polishing a semiconductor wafer into a mirror surface and flatness, and is commercially available. For example, Suba800 or IC-1 manufactured by Rodel
000, Surfi made by Fujimi Incorporated
n xxx-5, Surfin 000 and the like. Su
ba800, Surfin xxx-5, Surfin
000 is a non-woven fabric in which fibers are hardened with urethane resin,
IC-1000 is polyurethane foam. The foamed polyurethane is porous and has a large number of fine dents or pores on its surface.
【００２１】本来、研磨布は半導体ウエハの研磨に使用
するものであり、研磨布表面に砥液中の砥粒が付着しや
すい構造となっている。この研磨布を半導体ウエハの洗
浄に用いることにより、半導体ウエハ上に頑強に付着し
ているパーティクルを容易に離脱させることが可能であ
る。Originally, the polishing cloth is used for polishing semiconductor wafers, and has a structure in which the abrasive grains in the polishing liquid easily adhere to the surface of the polishing cloth. By using this polishing cloth for cleaning the semiconductor wafer, it is possible to easily remove the particles firmly adhered to the semiconductor wafer.
【００２２】研磨布からなる洗浄部材を用いることによ
るパーティクル除去の推定されるメカニズムを図３を用
いて説明する。図３は半導体ウエハの洗浄部を示す拡大
断面図である。図３において研磨布は発泡ポリウレタン
からなるものを示し、半導体ウエハ１と接触する接触面
には発泡気泡による微細な孔ｈが形成されている。この
孔の大きさは研磨布によって種々のものを選定すること
ができるが、平均細孔サイズで１０から２００μｍの範
囲のものが洗浄部材として適当である。半導体ウエハ１
と研磨布ＣL を圧接させ、相対運動させることによって
半導体ウエハ上のパーティクルｐは研磨布の細孔ｈのエ
ッジ部ｅで掻き取られ、細孔の仲に捕捉されてウエハ外
へ除去されているものと考えられる。An estimated mechanism of particle removal by using a cleaning member made of a polishing cloth will be described with reference to FIG. FIG. 3 is an enlarged cross-sectional view showing the cleaning unit of the semiconductor wafer. In FIG. 3, the polishing cloth is made of foamed polyurethane, and fine holes h are formed by foamed bubbles on the contact surface that contacts the semiconductor wafer 1. Various pore sizes can be selected depending on the polishing cloth, but those having an average pore size in the range of 10 to 200 μm are suitable as the cleaning member. Semiconductor wafer 1
The particles p on the semiconductor wafer are scraped off by the edge portions e of the pores h of the polishing cloth by being brought into pressure contact with the polishing cloth C L and the relative movement, and are trapped in the middle of the pores and removed to the outside of the wafer. It is believed that
【００２３】なお、図３においてパーティクルと細孔の
大きさの関係は、実際には細孔に比べてパーティクルは
極めて小さい。ここで、ポリウレタンは従来から用いら
れているＰＶＡスポンジより硬いので、パーティクルを
ウエハ上から掻き取る力が大きいと考えられる。研磨布
の硬さはショア−Ｄ硬度で３０乃至８０程度であり、こ
の適度な硬さによってウエハを破損せずかつパーティク
ルを効果的に掻き取るという効果が生じる。これ以上の
硬度を有する部材を用いると、スクラビングによってウ
エハに傷を付ける場合がある。Incidentally, in FIG. 3, the relationship between the size of the particles and the size of the pores is actually much smaller than that of the pores. Here, since polyurethane is harder than the conventionally used PVA sponge, it is considered that the force of scraping particles from the wafer is large. The hardness of the polishing cloth is about 30 to 80 in Shore-D hardness, and this moderate hardness has the effect of effectively scraping particles without damaging the wafer. If a member having a hardness higher than this is used, the wafer may be scratched by scrubbing.
【００２４】また、研磨布と半導体ウエハとの接触圧力
を大きくすると研磨布自体の僅かな研磨作用があらわ
れ、パーティクルをパーティクルが付着している表面と
ともに薄く削り取ることによって除去していることも考
えられる。これは研磨布を用いた洗浄を行った半導体ウ
エハの洗浄面の面粗度が洗浄前より小さくなり、平滑に
されていることより確認できる。Further, if the contact pressure between the polishing cloth and the semiconductor wafer is increased, a slight polishing action of the polishing cloth itself appears, and it is conceivable that the particles are removed by thinly scraping them together with the surface to which the particles adhere. . This can be confirmed by the fact that the surface roughness of the cleaned surface of the semiconductor wafer that has been cleaned using the polishing cloth is smaller than before cleaning and is smooth.
【００２５】さらに、研磨布の表面に形成された細孔は
表面の孔で塞がっている。すなわち、隣合う気泡同士が
連通していないため、ウエハ上から除去し、細孔の中に
捕捉したパーティクルが洗浄部材の内部まで侵入しな
い。このため、細孔内に保持したパーティクルを容易に
除去することができ、洗浄部材を常に清浄な状態に保つ
ことができる。洗浄後の洗浄具を洗浄するセルフクリー
ニングの方法は、前述した洗浄カップ内に洗浄液を満た
し、その中に洗浄具をつけて回転させる方法の他、洗浄
部材の表面にウォータージェット流を付与する方法や、
超音波振動を与える方法等がある。Further, the pores formed on the surface of the polishing cloth are closed by the pores on the surface. That is, since the adjacent bubbles do not communicate with each other, the particles removed from the wafer and trapped in the pores do not enter the inside of the cleaning member. Therefore, the particles retained in the pores can be easily removed, and the cleaning member can always be kept in a clean state. As a self-cleaning method for cleaning the cleaning tool after cleaning, the above-mentioned cleaning cup is filled with the cleaning liquid, the cleaning tool is attached to the cleaning cup, and the cleaning cup is rotated, or a water jet stream is applied to the surface of the cleaning member. Or
There is a method of applying ultrasonic vibration.
【００２６】上記説明は、発泡ポリウレタンからなる洗
浄部材について述べたが、繊維をウレタン樹脂で固めた
不織布についても同様の効果がある。図４は繊維をウレ
タン樹脂で固めた不織布の表面の拡大図である。繊維ｆ
は互いに絡み合い、ウレタン樹脂によって固定されてい
る。表面には繊維の隙間によって微細な孔ｈが形成され
ている。この孔ｈによって被洗浄物であるウエハ上のパ
ーティクルを捕捉して除去するメカニズムは発泡ポリウ
レタンと同様である。Although the above description has described the cleaning member made of foamed polyurethane, the same effect can be obtained even with a nonwoven fabric in which fibers are solidified with urethane resin. FIG. 4 is an enlarged view of the surface of a non-woven fabric in which fibers are hardened with urethane resin. Fiber f
Are intertwined with each other and are fixed by urethane resin. Fine holes h are formed on the surface by the gaps between the fibers. The mechanism of capturing and removing particles on the wafer to be cleaned by the holes h is similar to that of the foamed polyurethane.
【００２７】図５は発泡ポリウレタンを主成分とし、表
面に微細な孔が形成されている部材であって、その表面
の形状が前述した発泡ポリウレタンとは異なる部材の拡
大断面図である。本部材はウレタン樹脂で固めた不織布
からなる基部ｂとその上面の発泡ポリウレタンＰL によ
って形成されており、発砲ポリウレタンには微細孔ｈが
形成されており、発泡気泡によって表面のポリウレタン
が繊維のように表面に立ち上がるように形成されてい
る。本部材も一般的には研磨布として用いられ、スエー
ドタイプの研磨布と呼ばれている。スエードタイプの研
磨布は、特にＳｉ，ＧａＡｓ等のウエハの仕上げポリッ
シング用として用いられている。FIG. 5 is an enlarged cross-sectional view of a member whose main component is polyurethane foam and whose surface has fine pores, and whose surface shape is different from that of the above-mentioned polyurethane foam. This member is formed by a base b made of a non-woven fabric hardened with urethane resin and foamed polyurethane P L on the upper surface thereof, and fine pores h are formed in the foamed polyurethane, and the foamed bubbles make the surface polyurethane look like fibers. It is formed so as to stand on the surface. This member is also generally used as a polishing cloth, and is called a suede type polishing cloth. A suede type polishing cloth is used especially for finish polishing of wafers such as Si and GaAs.
【００２８】スエードタイプの研磨布は前述した発泡ポ
リウレタンや繊維をウレタン樹脂で固めた不織布と比べ
るとやや柔らかいが、被洗浄物の表面を薄く削り取る作
用は同様に存在する。また、ポリッシングにおいて仕上
げポリッシング用として使用されることから、被洗浄物
の表面の微細な傷（マイクロスクラッチ）を除去するの
に適している。Although the suede type polishing cloth is slightly softer than the above-mentioned non-woven fabric in which polyurethane foam or fibers are hardened with urethane resin, it has the same function of scraping off the surface of the object to be cleaned. Further, since it is used for finishing polishing in polishing, it is suitable for removing fine scratches (micro scratches) on the surface of the object to be cleaned.
【００２９】次に本発明のポリウレタンを主成分とする
洗浄部材を用いた洗浄方法に用いる洗浄液について説明
する。洗浄具に微細孔を有するポリウレタンを主成分と
する洗浄部材を用いると同時に、洗浄液を適切に選定す
ることにより、スクラブ洗浄による機械的洗浄と、洗浄
液による化学的洗浄の複合的な洗浄効果が得られる。Next, the cleaning liquid used in the cleaning method using the cleaning member containing polyurethane as the main component of the present invention will be described. By using a cleaning member mainly composed of polyurethane with fine pores for the cleaning tool and selecting the cleaning liquid appropriately, a combined cleaning effect of mechanical cleaning by scrub cleaning and chemical cleaning by the cleaning liquid can be obtained. To be
【００３０】第１に、界面活性剤を用いる場合を説明す
る。界面活性剤は半導体ウエハ上に付着したパーティク
ルの付着力を弱め、パーティクルを表面から除去しやす
くする。パーティクルがウエハ表面へ付着しているメカ
ニズムの１つとして、油脂分（有機物汚染）とともに付
着している場合がある。このような場合、界面活性剤分
子はウエハ表面と有機物汚染との間に侵入し、汚染物質
を取り囲み油滴として洗浄液中に溶解する。このように
パーティクルとウエハ表面との付着力を高めている有機
物汚染を界面活性剤によって化学的に除去するため、パ
ーティクルとウエハ表面の付着力が弱まり、パーティク
ルを容易に除去することができる。First, the case where a surfactant is used will be described. The surfactant weakens the adhesive force of the particles adhered on the semiconductor wafer and makes it easy to remove the particles from the surface. As one of the mechanisms that particles adhere to the wafer surface, there is a case where particles adhere together with oil and fat (organic contaminants). In such a case, the surfactant molecules penetrate between the wafer surface and the organic contaminants, surround the contaminants and dissolve in the cleaning liquid as oil droplets. Since the organic contaminants that increase the adhesion between the particles and the wafer surface are chemically removed by the surfactant, the adhesion between the particles and the wafer surface is weakened, and the particles can be easily removed.
【００３１】なお、界面活性剤を用いた場合、ウエハ表
面には界面活性剤分子が付着しているため、引き続いて
酸洗浄を行い、界面活性剤分子を除去することが必要で
ある。また、洗浄液として界面活性剤を使用することに
より、洗浄後に洗浄具に付着したパーティクルを洗い落
とすセルフクリーニングの時にも洗浄具とパーティクル
の付着力が弱まるという効果が発揮される。When the surface active agent is used, since the surface active agent molecules are attached to the wafer surface, it is necessary to subsequently perform acid cleaning to remove the surface active agent molecules. Further, by using the surfactant as the cleaning liquid, the effect of weakening the adhesive force between the cleaning tool and the particles is exhibited even during self-cleaning in which particles adhering to the cleaning tool are washed off after cleaning.
【００３２】第２に、アンモニア（ＮＨ4 ＯＨ）と過酸
化水素（Ｈ2 Ｏ2 ）と純水（Ｈ2 Ｏ）との混合液を洗浄
液とする場合を説明する。この洗浄液は被洗浄物の表面
を薄くエッチングする作用があり、有機物汚染、金属イ
オン等の除去に効果的である。なお、ＮＨ4 ＯＨ、Ｈ2
Ｏ2 、Ｈ2 Ｏの混合比は１：１：５程度が望ましく、ま
た、加熱することによりその洗浄効果が高まる。Secondly, a case where a mixed solution of ammonia (NH 4 OH), hydrogen peroxide (H 2 O 2 ) and pure water (H 2 O) is used as a cleaning solution will be described. This cleaning solution has a function of thinly etching the surface of the object to be cleaned, and is effective in removing organic contaminants, metal ions and the like. In addition, NH 4 OH, H 2
The mixing ratio of O 2 and H 2 O is preferably about 1: 1: 5, and heating improves the cleaning effect.
【００３３】第３に、塩酸（ＨＣｌ）と過酸化水素（Ｈ
2 Ｏ2 ）と純水（Ｈ2 Ｏ）との混合液からなる洗浄液を
説明する。この洗浄液は金属イオン等を溶解して除去す
る効果がある。ここで、金属イオン汚染とは、Ｎａ，
Ｋ，Ｎｉ，Ｆｅをはじめとする金属がイオンとして存在
することであり、これらの汚染は特に半導体においては
電気的特性に影響するものであるから、完全に除去する
ことが望ましい。なお、ＨＣｌ、Ｈ2 Ｏ2 、Ｈ2 Ｏの混
合比は１：１：５程度が望ましく、加熱するとその洗浄
効果が高まる。Third, hydrochloric acid (HCl) and hydrogen peroxide (H
A cleaning liquid composed of a mixed liquid of 2 O 2 ) and pure water (H 2 O) will be described. This cleaning solution has an effect of dissolving and removing metal ions and the like. Here, metal ion contamination means Na,
Metals such as K, Ni, and Fe exist as ions, and since these contaminations affect the electrical characteristics of semiconductors in particular, it is desirable to completely remove them. The mixing ratio of HCl, H 2 O 2 and H 2 O is preferably about 1: 1: 5, and heating will enhance the cleaning effect.
【００３４】第４はコロイダルシリカ（ＳｉＯ2 ）粒子
をアルカリ液、例えばＫＯＨ，ＮａＯＨに懸濁した溶液
を用いる場合である。このような溶液は一般的にポリッ
シング用の砥液として用いられているものである。コロ
イダルシリカは粒子状の固体であり、粒子径は０．０６
μｍ程度である。洗浄中に供給する場合にはコロイダル
シリカ粒子の粒径が均一なものが望ましい。The fourth is the case of using a solution prepared by suspending colloidal silica (SiO 2 ) particles in an alkaline solution such as KOH or NaOH. Such a solution is generally used as a polishing liquid for polishing. Colloidal silica is a particulate solid and has a particle size of 0.06.
It is about μm. When supplied during cleaning, it is desirable that the colloidal silica particles have a uniform particle size.
【００３５】コロイダルシリカを洗浄中に供給すること
は、かえって半導体ウエハを汚染するように考えられる
が、実際には、コロイダルシリカ粒子と半導体ウエハ上
に付着したパーティクルとが衝突して除去されるという
機械的な洗浄効果がある。さらに、アルカリ溶液も同時
に供給するので、有機物汚染を同時に除去することが可
能である。ここで、洗浄具にセルフクリーニングが容易
な部材を用いているため、洗浄具に付着したコロイダル
シリカを短時間でその大部分を除去することができるの
で、繰り返し本洗浄方法を行うことができる。It is considered that supplying colloidal silica during cleaning may contaminate the semiconductor wafer, but in reality, colloidal silica particles collide with particles adhering to the semiconductor wafer and are removed. Has a mechanical cleaning effect. Furthermore, since the alkaline solution is also supplied at the same time, it is possible to simultaneously remove organic contaminants. Here, since the cleaning tool uses a member that is easily self-cleaning, most of the colloidal silica attached to the cleaning tool can be removed in a short time, and thus the main cleaning method can be repeatedly performed.
【００３６】上述した４種の洗浄液を用いた洗浄はそれ
ぞれ独立してもまたは組み合わせても行うことができ
る。洗浄部材としてポリウレタンを主成分とする洗浄部
材を用いているため、酸やアルカリに対して耐食性があ
るので、洗浄液として酸やアルカリを用いることがで
き、さらにセルフクリーニングが容易なので微粒子を洗
浄の補助剤として使用することができる。The above-mentioned cleaning using the four kinds of cleaning solutions can be carried out independently or in combination. Since a cleaning member containing polyurethane as the main component is used as the cleaning member, it has corrosion resistance to acids and alkalis, so acids and alkalis can be used as the cleaning liquid, and self-cleaning is easy, so it assists in cleaning fine particles. It can be used as an agent.
【００３７】図６は本発明の洗浄方法をポリッシング処
理と組み合わせた実施例を示す斜視図である。図６には
ポリッシング装置２０、ウエハ収納カセット３０、搬送
ロボット３５、第１洗浄装置４０、第２洗浄装置４５が
示されている。FIG. 6 is a perspective view showing an embodiment in which the cleaning method of the present invention is combined with a polishing process. FIG. 6 shows the polishing device 20, the wafer storage cassette 30, the transfer robot 35, the first cleaning device 40, and the second cleaning device 45.
【００３８】ポリッシング処理は半導体製造工程のうち
の１工程であり、半導体ウエハを平坦かつ鏡面に研磨す
る処理である。半導体ウエハ上に形成する配線を多層化
する場合、層を重ねる前に表面を平坦化し、上層を形成
しやすくするために行う。The polishing process is one of the semiconductor manufacturing processes, and is a process for polishing a semiconductor wafer to be flat and mirror-finished. When the wiring formed on the semiconductor wafer is formed into multiple layers, the surface is flattened before the layers are stacked to facilitate formation of the upper layer.
【００３９】図７は、図６のポリッシング装置２０の詳
細を示す図である。図７に示されるように、ポリッシン
グ装置２０は、ターンテーブル２１と、半導体ウエハ１
を保持しつつターンテーブル２１に押しつけるトップリ
ング２３とを具備している。前記ターンテーブル２１は
モータ（図示せず）に連結されており、矢印で示すよう
にその軸心回わりに回転可能になっている。またターン
テーブル２１の上面には、研磨布２４が貼設されてい
る。研磨布２４には、図１及び図２に示す洗浄装置にお
ける洗浄部材３と同一材質のものが使用されている。FIG. 7 is a diagram showing details of the polishing apparatus 20 of FIG. As shown in FIG. 7, the polishing apparatus 20 includes a turntable 21 and a semiconductor wafer 1
And a top ring 23 that presses against the turntable 21 while holding. The turntable 21 is connected to a motor (not shown) and is rotatable about its axis as indicated by an arrow. A polishing cloth 24 is attached to the upper surface of the turntable 21. The polishing cloth 24 is made of the same material as the cleaning member 3 in the cleaning device shown in FIGS.
【００４０】またトップリング２３は、モータ（図示せ
ず）に連結されるとともに昇降シリンダ（図示せず）に
連結されている。これによって、トップリング２３は、
矢印で示すように昇降可能かつその軸心回わりに回転可
能になっており、半導体ウエハ１を研磨布２４に対して
任意の圧力で押圧することができるようになっている。
また、ターンテーブル２１の上方には研磨砥液ノズル２
５が設置されており、研磨砥液ノズル２５によってター
ンテーブル２１に張り付けられた研磨布２４上に研磨砥
液Ｑが供給されるようになっている。The top ring 23 is connected to a motor (not shown) and also to an elevating cylinder (not shown). As a result, the top ring 23 is
As shown by the arrow, it can be moved up and down and rotated about its axis, and the semiconductor wafer 1 can be pressed against the polishing cloth 24 with an arbitrary pressure.
Further, above the turntable 21, the polishing abrasive liquid nozzle 2 is provided.
5 is installed, and the polishing abrasive liquid Q is supplied onto the polishing cloth 24 stuck to the turntable 21 by the polishing abrasive liquid nozzle 25.
【００４１】上記構成のポリッシング装置において、ト
ップリング２３の下面に半導体ウエハ１を保持させ、半
導体ウエハ１を回転しているターンテーブル２１の上面
の研磨布２４に昇降シリンダにより押圧する。一方、研
磨砥液ノズル２５から研磨砥液Ｑを流すことにより、研
磨布２４に研磨砥液Ｑが保持され、半導体ウエハ１の研
磨される面（下面）と研磨布２４の間に研磨砥液Ｑが存
在した状態でポリッシングが行われる。In the polishing apparatus having the above structure, the semiconductor wafer 1 is held on the lower surface of the top ring 23, and the semiconductor wafer 1 is pressed against the polishing cloth 24 on the upper surface of the rotating turntable 21 by the lifting cylinder. On the other hand, by causing the polishing abrasive liquid Q to flow from the polishing abrasive liquid nozzle 25, the polishing abrasive liquid Q is retained on the polishing cloth 24, and the polishing abrasive liquid Q is held between the surface (lower surface) of the semiconductor wafer 1 to be polished and the polishing cloth 24. Polishing is performed with Q present.
【００４２】したがって、ポリッシング後の半導体ウエ
ハには砥液中に含まれる砥粒や、ウエハの削り屑が付着
している。また、ポリッシングではアルカリベースの砥
液が用いられ、必然的にウエハ表面はアルカリ金属
（Ｋ：カリウム）で汚染されているため、洗浄しなけれ
ばならない。Therefore, the abrasive grains contained in the polishing liquid and the shavings of the wafer adhere to the semiconductor wafer after polishing. In addition, an alkali-based polishing liquid is used in polishing, and the wafer surface is necessarily contaminated with alkali metal (K: potassium), and therefore must be cleaned.
【００４３】まず、ウエハ収納カセット３０内のウエハ
を搬送ロボット３５により、ポリッシング装置２０へ搬
送し、ポリッシング処理を行う。図６に示すポリッシン
グ装置２０によってポリッシングされたウエハは、図示
しない反転機構により研磨された面を上面にした後に、
搬送ロボット３５により第１洗浄装置４０に搬送され、
洗浄が行われる。第１洗浄装置４０ではブラシでウエハ
を擦るスクラブ洗浄を行い、ここでウエハ表面に付着し
ている砥液の大部分が洗い落とされる。第１洗浄装置４
０でブラシ洗浄を行った後、ウエハをウエハ表面を乾燥
させずに第２洗浄装置４５に搬送し、ここで本発明の洗
浄部材を用いたスクラブ洗浄を行い、サブミクロンレベ
ルのパーティクルを除去する。具体的な洗浄工程は前述
したとおりである。First, the wafer in the wafer storage cassette 30 is transferred to the polishing device 20 by the transfer robot 35, and the polishing process is performed. The wafer polished by the polishing apparatus 20 shown in FIG. 6 has a surface polished by an inversion mechanism (not shown) as an upper surface,
It is transferred to the first cleaning device 40 by the transfer robot 35,
Cleaning is performed. In the first cleaning device 40, scrub cleaning is performed by rubbing the wafer with a brush, where most of the abrasive liquid adhering to the wafer surface is washed off. First cleaning device 4
After brush cleaning with 0, the wafer is transferred to the second cleaning device 45 without drying the wafer surface, and scrub cleaning is performed using the cleaning member of the present invention to remove submicron-level particles. . The specific cleaning process is as described above.
【００４４】ここでは、本発明の洗浄をポリッシング処
理と組み合わせた例を示したが、半導体製造工程の任意
の処理工程、例えばエッチングやＣＶＤ処理等と組み合
わせることができる。また、以上の実施例は半導体ウエ
ハの洗浄について説明したが、ガラス基板、液晶パネル
等の高度の清浄度を要求される基板についても同様に適
用できるのは勿論のことである。このように本発明の趣
旨を逸脱することなく種々の変形実施例が可能である。
なお、各図中同一符号は同一または相当部分を示す。Here, an example is shown in which the cleaning of the present invention is combined with the polishing process, but it can be combined with any processing step of the semiconductor manufacturing process, such as etching or CVD processing. Further, although the above embodiments have described the cleaning of the semiconductor wafer, it is needless to say that the same can be applied to a substrate requiring a high degree of cleanliness such as a glass substrate and a liquid crystal panel. As described above, various modified embodiments are possible without departing from the spirit of the present invention.
In the drawings, the same reference numerals indicate the same or corresponding parts.
【００４５】[0045]
【発明の効果】以上説明したように本発明によれば、下
記に列挙する優れた効果が得られる。 （１）被洗浄面上に存在する通常のスクラブ洗浄または
化学洗浄では除去できないサブミクロンレベルのパーテ
ィクルを除去し、より高い洗浄効果を得ることができ
る。従って、微細なパターンの半導体ウエハ、液晶パネ
ル等の製造歩留を向上させることができる。 （２）被洗浄面上に頑強に付着しているパーティクルを
スクラブ洗浄により容易に離脱させることができる。 （３）洗浄と同時に洗浄面の面粗度を整え、平滑にする
ことができる。 （４）洗浄後のセルフクリーニングを容易に行うことが
できる。As described above, according to the present invention, the excellent effects listed below can be obtained. (1) Submicron level particles existing on the surface to be cleaned that cannot be removed by ordinary scrub cleaning or chemical cleaning can be removed, and a higher cleaning effect can be obtained. Therefore, it is possible to improve the production yield of semiconductor wafers, liquid crystal panels, etc. having fine patterns. (2) The particles firmly adhered to the surface to be cleaned can be easily removed by scrub cleaning. (3) The surface roughness of the cleaned surface can be adjusted and smoothed simultaneously with the cleaning. (4) Self-cleaning after cleaning can be easily performed.
【図１】本発明に係る洗浄方法を実施する洗浄装置の斜
視図である。FIG. 1 is a perspective view of a cleaning device for carrying out a cleaning method according to the present invention.
【図２】本発明の洗浄装置における洗浄具の縦断面図で
ある。FIG. 2 is a vertical sectional view of a cleaning tool in the cleaning apparatus of the present invention.
【図３】本発明の洗浄方法のメカニズムを説明する説明
図である。FIG. 3 is an explanatory view illustrating the mechanism of the cleaning method of the present invention.
【図４】本発明の洗浄部材の表面の拡大図である。FIG. 4 is an enlarged view of the surface of the cleaning member of the present invention.
【図５】本発明の洗浄部材の他の例を示す説明図であ
る。FIG. 5 is an explanatory view showing another example of the cleaning member of the present invention.
【図６】本発明の洗浄装置をポリッシング装置と組み合
わせた実施例を示す斜視図である。FIG. 6 is a perspective view showing an embodiment in which the cleaning device of the present invention is combined with a polishing device.
【図７】図６に示すポリッシング装置の詳細を示す断面
図である。7 is a cross-sectional view showing details of the polishing apparatus shown in FIG.
１ 半導体ウエハ ２ スピンチャック ３ 洗浄部材 ６ 洗浄具 ７ 揺動アーム ８ 洗浄液ノズル ９ 洗浄カップ １０ 回転軸 １１ カートリッジ １２ バネ 1 Semiconductor Wafer 2 Spin Chuck 3 Cleaning Member 6 Cleaning Tool 7 Swing Arm 8 Cleaning Liquid Nozzle 9 Cleaning Cup 10 Rotation Shaft 11 Cartridge 12 Spring
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡田 素明 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 高橋 圭瑞 東京都大田区羽田旭町11番１号 株式会社 荏原製作所内 (72)発明者 三島 志朗 神奈川県川崎市幸区堀川町72番地 株式会 社東芝東芝堀川町工場内 (72)発明者 小寺 雅子 神奈川県川崎市幸区堀川町72番地 株式会 社東芝東芝堀川町工場内 (72)発明者 重田 厚 神奈川県川崎市幸区堀川町72番地 株式会 社東芝東芝堀川町工場内 (72)発明者 青木 利一郎 神奈川県川崎市幸区堀川町72番地 株式会 社東芝東芝堀川町工場内 (72)発明者 河野 義介 大分県大分市大字松岡3500番地 株式会社 東芝東芝大分工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Motoaki Okada 11-1 Haneda Asahi-cho, Ota-ku, Tokyo Inside the EBARA CORPORATION (72) Inventor Keisui Takahashi 11-11 Haneda-Asahi-cho, Ota-ku, Tokyo EBARA CORPORATION (72) Inventor Shiro Mishima 72 Horikawa-cho, Sachi-ku, Kawasaki-shi, Kanagawa Stock company Toshiba Toshiba Horikawa-cho factory (72) Inventor Masako Kodera 72 Horikawa-cho, Kawasaki-shi, Kanagawa Stock company Company Toshiba Toshiba Horikawa-cho factory (72) Inventor Atsushi Shigeta 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Stock company Toshiba Toshiba Horikawa-cho factory (72) Inventor Riichiro Aoki 72 Horikawa-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Stock company Toshiba Toshiba Horikawa-cho factory (72) Inventor Yoshisuke Kono 3500 Matsuoka Oita Oita-shi Oita prefecture Toshiba Toshiba Oita factory
Claims (20)
１０から２００μｍの微細な孔を有するポリウレタンを
主成分とする洗浄部材を被洗浄物に当接させてスクラブ
洗浄することを特徴とする洗浄方法。1. A scrub cleaning is performed by bringing a cleaning member containing polyurethane as a main component, which has fine pores having an average pore size of 10 to 200 μm on a surface contacting the cleaning target, into contact with the cleaning target. And the cleaning method.
固めた不織布、または発泡ポリウレタンであることを特
徴とする請求項１記載の洗浄方法。2. The cleaning method according to claim 1, wherein the cleaning member is a non-woven fabric obtained by hardening fibers with a urethane resin, or foamed polyurethane.
ショア−Ｄ硬度で３０乃至８０の硬度を有する合成樹脂
からなる洗浄部材を被洗浄物に当接させてスクラブ洗浄
することを特徴とする洗浄方法。3. A fine hole is provided on the contact surface with the object to be cleaned,
A cleaning method characterized by scrub cleaning by bringing a cleaning member made of a synthetic resin having a Shore-D hardness of 30 to 80 into contact with an object to be cleaned.
等の基板を洗浄する洗浄方法において、繊維をウレタン
樹脂で固めた不織布、または発泡ポリウレタンを前記基
板に当接させてスクラブ洗浄することを特徴とする洗浄
方法。4. A cleaning method for cleaning a substrate such as a semiconductor wafer, a glass substrate, a liquid crystal panel, etc., wherein a non-woven fabric obtained by fixing fibers with urethane resin or foamed polyurethane is brought into contact with the substrate for scrub cleaning. How to wash.
せることを特徴とする請求項１乃至４のいずれか１項に
記載の洗浄方法。5. The cleaning method according to claim 1, wherein an object to be cleaned is rotated during the scrub cleaning.
る被洗浄物の中心から周縁部に接触させながら一回以上
スキャンさせることにより行うことを特徴とする請求項
５記載の洗浄方法。6. The cleaning method according to claim 5, wherein the scrub cleaning is performed by scanning the cleaning member one or more times while making contact with the rotating object to be cleaned from the center to the peripheral edge.
浸漬させて保管することを特徴とする請求項１乃至６の
いずれか１項に記載の洗浄方法。7. The cleaning method according to claim 1, wherein the cleaning member is immersed and stored in a cleaning liquid when not being cleaned.
洗浄液を供給することを特徴とする請求項１乃至７のい
ずれか１項に記載の洗浄方法。8. The cleaning method according to claim 1, wherein a cleaning liquid containing a surfactant is supplied during the scrub cleaning.
過酸化水素を含む洗浄液を供給することを特徴とする請
求項１乃至７のいずれか１項に記載の洗浄方法。9. The cleaning method according to claim 1, wherein a cleaning liquid containing ammonia and hydrogen peroxide is supplied during the scrub cleaning.
化水素を含む洗浄液を供給することを特徴とする請求項
１乃至７のいずれか１項に記載の洗浄方法。10. The cleaning method according to claim 1, wherein a cleaning liquid containing hydrochloric acid and hydrogen peroxide is supplied during the scrub cleaning.
カ粒子をアルカリ溶液中に懸濁した懸濁液を供給するこ
とを特徴とする請求項１乃至７のいずれか１項に記載の
洗浄方法。11. The cleaning method according to claim 1, wherein a suspension of colloidal silica particles suspended in an alkaline solution is supplied during the scrub cleaning.
ル等の基板を洗浄する洗浄方法において、ポリッシング
に用いる研磨布を該基板に当接させてスクラブ洗浄する
ことを特徴とする洗浄方法。12. A cleaning method for cleaning a substrate such as a semiconductor wafer, a glass substrate, or a liquid crystal panel, which comprises scrub cleaning by bringing an abrasive cloth used for polishing into contact with the substrate.
るスピンチャックと、揺動アームの先端に回転可能な洗
浄具を備え、前記洗浄具を前記基板に当接させて洗浄す
る洗浄装置において、前記洗浄具に被洗浄物との接触面
に１０から２００μｍの微細な孔を有するポリウレタン
を主成分とする洗浄部材を取り付けてなることを特徴と
する洗浄装置。13. A cleaning apparatus, comprising: a spin chuck for holding and rotating a substrate to be cleaned; and a rotatable cleaning tool at a tip of a swing arm, wherein the cleaning tool is brought into contact with the substrate to clean the substrate. A cleaning device, characterized in that the cleaning tool is provided with a cleaning member containing polyurethane as a main component having fine holes of 10 to 200 μm on a contact surface with an object to be cleaned.
で固めた不織布、または発泡ポリウレタンであることを
特徴とする請求項１３記載の洗浄装置。14. The cleaning apparatus according to claim 13, wherein the cleaning member is a non-woven fabric obtained by hardening fibers with a urethane resin, or a foamed polyurethane.
とを特徴とする請求項１３または１４記載の洗浄装置。15. The cleaning apparatus according to claim 13 or 14, wherein the cleaning tool includes a buffer mechanism.
跡上に前記洗浄具を自己洗浄する洗浄カップを備えたこ
とを特徴とする請求項１３乃至１５のいずれか１項記載
の洗浄装置。16. The cleaning apparatus according to claim 13, further comprising a cleaning cup that self-cleans the cleaning tool on a swing trajectory of the cleaning tool by the swing arm.
るスピンチャックと、支持部材により支持されるととも
に回転可能な洗浄具を備え、前記洗浄具を前記基板に当
接させて洗浄する洗浄装置において、前記洗浄具に繊維
をウレタン樹脂で固めた不織布、または発泡ポリウレタ
ンからなる洗浄部材を取り付けてなることを特徴とする
洗浄装置。17. A cleaning device comprising a spin chuck for holding and rotating a substrate to be cleaned, and a cleaning tool supported by a supporting member and rotatable, wherein the cleaning tool is brought into contact with the substrate for cleaning. In the cleaning device, a cleaning member made of non-woven fabric obtained by hardening fibers with urethane resin or polyurethane foam is attached to the cleaning tool.
とを特徴とする請求項１７記載の洗浄装置。18. The cleaning apparatus according to claim 17, wherein the cleaning tool includes a buffer mechanism.
とを特徴とする請求項１７又は１８記載の洗浄装置。19. The cleaning device according to claim 17, wherein the support member is a swing arm.
跡上に前記洗浄具を自己洗浄する洗浄カップを備えたこ
とを特徴とする請求項１７乃至１９のいずれか１項記載
の洗浄装置。20. The cleaning apparatus according to claim 17, further comprising a cleaning cup for self-cleaning the cleaning tool on a swing path of the cleaning tool by the swing arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP07129588A JP3114156B2 (en) | 1994-06-28 | 1995-04-28 | Cleaning method and apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16876794 | 1994-06-28 | ||
| JP6-168767 | 1994-06-28 | ||
| JP07129588A JP3114156B2 (en) | 1994-06-28 | 1995-04-28 | Cleaning method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0871511A true JPH0871511A (en) | 1996-03-19 |
| JP3114156B2 JP3114156B2 (en) | 2000-12-04 |
Family
ID=26464937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP07129588A Expired - Lifetime JP3114156B2 (en) | 1994-06-28 | 1995-04-28 | Cleaning method and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3114156B2 (en) |
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-
1995
- 1995-04-28 JP JP07129588A patent/JP3114156B2/en not_active Expired - Lifetime
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