JP2015013790A5 - - Google Patents

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Publication number
JP2015013790A5
JP2015013790A5 JP2013195715A JP2013195715A JP2015013790A5 JP 2015013790 A5 JP2015013790 A5 JP 2015013790A5 JP 2013195715 A JP2013195715 A JP 2013195715A JP 2013195715 A JP2013195715 A JP 2013195715A JP 2015013790 A5 JP2015013790 A5 JP 2015013790A5
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JP
Japan
Prior art keywords
plane
main surface
gan crystal
crystal
angle
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Application number
JP2013195715A
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English (en)
Japanese (ja)
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JP6187083B2 (ja
JP2015013790A (ja
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Priority to JP2013195715A priority Critical patent/JP6187083B2/ja
Priority claimed from JP2013195715A external-priority patent/JP6187083B2/ja
Publication of JP2015013790A publication Critical patent/JP2015013790A/ja
Publication of JP2015013790A5 publication Critical patent/JP2015013790A5/ja
Application granted granted Critical
Publication of JP6187083B2 publication Critical patent/JP6187083B2/ja
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JP2013195715A 2013-06-06 2013-09-20 第１３族金属窒化物結晶 Active JP6187083B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013195715A JP6187083B2 (ja) 2013-06-06 2013-09-20 第１３族金属窒化物結晶

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013119857 2013-06-06
JP2013119857 2013-06-06
JP2013195715A JP6187083B2 (ja) 2013-06-06 2013-09-20 第１３族金属窒化物結晶

Publications (3)

Publication Number Publication Date
JP2015013790A JP2015013790A (ja) 2015-01-22
JP2015013790A5 true JP2015013790A5 (https=) 2016-06-09
JP6187083B2 JP6187083B2 (ja) 2017-08-30

Family

ID=52435842

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013195715A Active JP6187083B2 (ja) 2013-06-06 2013-09-20 第１３族金属窒化物結晶
JP2013195716A Pending JP2015013791A (ja) 2013-06-06 2013-09-20 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013195716A Pending JP2015013791A (ja) 2013-06-06 2013-09-20 周期表第１３族金属窒化物半導体結晶の製造方法及び周期表第１３族金属窒化物半導体結晶

Country Status (1)

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JP (2) JP6187083B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6885547B2 (ja) * 2016-03-15 2021-06-16 三菱ケミカル株式会社 ＧａＮ結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4551203B2 (ja) * 2004-12-08 2010-09-22 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US8269251B2 (en) * 2007-05-17 2012-09-18 Mitsubishi Chemical Corporation Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
JP4530004B2 (ja) * 2007-07-18 2010-08-25 住友電気工業株式会社 ＧａＮ結晶の成長方法
JP5045292B2 (ja) * 2007-07-27 2012-10-10 三菱化学株式会社 窒化物半導体基板の製造方法
KR101810613B1 (ko) * 2008-05-28 2017-12-20 더 리전츠 오브 더 유니버시티 오브 캘리포니아 육방정 우르차이트 단결정
US20100003492A1 (en) * 2008-07-07 2010-01-07 Soraa, Inc. High quality large area bulk non-polar or semipolar gallium based substrates and methods
JP5821164B2 (ja) * 2010-04-27 2015-11-24 住友電気工業株式会社 ＧａＮ基板および発光デバイス

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