JP2014522296A - 銅及びインジウムを基剤とするインクをナイフコーティングする装置及び方法 - Google Patents
銅及びインジウムを基剤とするインクをナイフコーティングする装置及び方法 Download PDFInfo
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- JP2014522296A JP2014522296A JP2014508853A JP2014508853A JP2014522296A JP 2014522296 A JP2014522296 A JP 2014522296A JP 2014508853 A JP2014508853 A JP 2014508853A JP 2014508853 A JP2014508853 A JP 2014508853A JP 2014522296 A JP2014522296 A JP 2014522296A
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- 239000010949 copper Substances 0.000 title claims abstract description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 28
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 25
- 238000010345 tape casting Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000576 coating method Methods 0.000 claims abstract description 52
- 239000011248 coating agent Substances 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000000976 ink Substances 0.000 description 66
- 239000010409 thin film Substances 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 244000045947 parasite Species 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/001—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work incorporating means for heating or cooling the liquid or other fluent material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/04—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface with blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/18—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material only one side of the work coming into contact with the liquid or other fluent material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0254—Coating heads with slot-shaped outlet
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Coating Apparatus (AREA)
- Chemically Coating (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Inks, Pencil-Leads, Or Crayons (AREA)
Abstract
Description
一様な厚さ及び形態の薄膜を製造するための、大きな表面上に銅及びインジウムを基剤とするインクを堆積させる、信頼性があり、安価な手段は、ナイフコーティング堆積装置を使用する。この装置は、インク及びインクと接触する素子、すなわち基材及びナイフ、の温度を制御する手段を備える。より詳しくは、インク、基材、及びナイフは、コーティングを行う際、異なった、増加する温度に維持される。
Claims (13)
- 銅及びインジウムを基剤とするインク(11)の層を基材(12)上にナイフコーティング(10)により堆積させる装置であって、コーティングナイフ(14、22)と連携する前記インク(11)の供給タンク(15、21)を備えてなり、前記インク(11)、前記基材(12)及び前記コーティングナイフ(14、22)を、異なった、増加するそれぞれの温度に維持する手段を備えてなる、装置。
- 前記供給タンク(15、21)の温度を制御する手段を備えてなり、前記供給タンク(15、21)が熱伝導性材料により形成されている、請求項1に記載の装置。
- 前記コーティングナイフ(14、22)の温度を制御する手段を備えてなり、前記コーティングナイフ(14、22)が熱伝導性材料により形成されている、請求項1又は2に記載の装置。
- 前記供給タンク(15、21)及び前記コーティングナイフ(14、22)が互いに固く取り付けられており、断熱材料から製造された層(23)により分離されている、請求項1〜3のいずれか一項に記載の装置。
- 前記インク(19)がガリウムを含んでなる、請求項1〜4のいずれか一項に記載の装置。
- 銅及びインジウムを基剤とするインク(11)の層を基材(12)上にコーティングナイフ(14、22) によりナイフコーティング堆積させる方法であって、前記インク(19)、前記基材(12)及び前記コーティングナイフ(14、22)が異なった、増加するそれぞれの温度に維持される、方法。
- 前記インク(19)が、20℃〜100℃の温度に維持される、請求項6に記載の方法。
- 前記インク(19)の粘度が、せん断速度500s−1で0.005Pa.s〜0.08Pa.sである、請求項6又は7に記載の方法。
- 前記インク(19)及び前記基材(12)のそれぞれの温度の差が20℃〜100℃である、請求項6〜8のいずれか一項に記載の方法。
- 前記コーティングナイフ(14、22)及び前記基材(12)のそれぞれの温度の差が20℃〜100℃である、請求項6〜9のいずれか一項に記載の方法。
- 前記インク(19)が、銅、インジウム及びガリウムを基剤とする、請求項6〜10のいずれか一項に記載の方法。
- 前記インク(19)中の前記銅濃度と前記銅、インジウム及びガリウム濃度の合計の比が0.7〜1.0である、請求項11に記載の方法。
- 前記インク(19)中の前記ガリウム濃度と前記インジウム及びガリウム濃度の合計の比が0.2〜0.5である、請求項11又は12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1101406 | 2011-05-06 | ||
FR1101406A FR2974745B1 (fr) | 2011-05-06 | 2011-05-06 | Dispositif et procede de depot par enduction a la racle d'encre a base de cuivre et d'indium |
PCT/FR2012/000176 WO2012153017A1 (fr) | 2011-05-06 | 2012-05-03 | Dispositif et procédé de dépôt par enduction à la racle d'encre à base de cuivre et d'indium |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014522296A true JP2014522296A (ja) | 2014-09-04 |
JP5797835B2 JP5797835B2 (ja) | 2015-10-21 |
Family
ID=46321061
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014508853A Expired - Fee Related JP5797835B2 (ja) | 2011-05-06 | 2012-05-03 | 銅及びインジウムを基剤とするインクをナイフコーティングする装置及び方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9305790B2 (ja) |
EP (1) | EP2705542A1 (ja) |
JP (1) | JP5797835B2 (ja) |
KR (1) | KR20140022060A (ja) |
CN (1) | CN103503170A (ja) |
FR (1) | FR2974745B1 (ja) |
WO (1) | WO2012153017A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2735378A1 (en) * | 2012-11-23 | 2014-05-28 | 3S Swiss Solar Systems AG | Method for making a solar module with encapsulant and system therefor |
FR2999441B1 (fr) * | 2012-12-14 | 2016-01-01 | Commissariat Energie Atomique | Boitier hermetique, en particulier pour l'encapsulation d'un dispositif medical implantable. |
CN106925491B (zh) * | 2017-04-27 | 2022-12-20 | 三峡大学 | 疏水除污膜镀膜刮刀及镀膜方法 |
CN110355048A (zh) * | 2018-03-26 | 2019-10-22 | 宝武炭材料科技有限公司 | 一种锂离子电池用浆料涂布装置 |
CN114904744B (zh) * | 2022-04-14 | 2023-07-04 | 南京邮电大学 | 一种制备铜铟硒薄膜的刮涂方法及其应用 |
Citations (12)
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JPH01284362A (ja) * | 1988-04-02 | 1989-11-15 | Roehm Gmbh | プラスチックからなる平担なプレート又はウエブを被覆する方法及び装置 |
JPH03135467A (ja) * | 1989-10-20 | 1991-06-10 | Juergen Ruemmer | シート状の支持材料を被覆するためおよび支持材料のないシートを製造するための設備 |
EP0577136A1 (de) * | 1992-07-03 | 1994-01-05 | FRIZ MASCHINENBAU GmbH | Vorrichtung zum Auftragen von Klebstoff |
JPH08510164A (ja) * | 1993-05-12 | 1996-10-29 | チバ−ガイギー アクチエンゲゼルシャフト | 導体板のコーティング方法及び装置 |
JP2002126606A (ja) * | 2000-10-27 | 2002-05-08 | Kurz Japan Kk | 接着剤塗布装置 |
JP2004082059A (ja) * | 2002-08-28 | 2004-03-18 | Nec Corp | 厚膜塗布装置、厚膜塗布方法、及び、プラズマディスプレイパネルの製造方法 |
JP2006068708A (ja) * | 2004-09-06 | 2006-03-16 | Matsushita Electric Ind Co Ltd | 塗工ヘッドとそれを用いた塗工装置、貼り合わせ装置 |
JP2010251694A (ja) * | 2009-03-26 | 2010-11-04 | Fujifilm Corp | 光電変換半導体層とその製造方法、光電変換素子、及び太陽電池 |
WO2011013657A1 (ja) * | 2009-07-30 | 2011-02-03 | 京セラ株式会社 | 化合物半導体の製造方法および光電変換装置の製造方法ならびに半導体形成用溶液 |
US20110030581A1 (en) * | 2009-08-04 | 2011-02-10 | Precursor Energetics, Inc. | Polymeric precursors for aigs silver-containing photovoltaics |
WO2011040272A1 (ja) * | 2009-09-29 | 2011-04-07 | 京セラ株式会社 | 光電変換装置 |
JP2011516303A (ja) * | 2008-04-02 | 2011-05-26 | ソシエテ ド テクノロジー ミシュラン | 関節式被着パレットを備えたノズル |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE9208951U1 (de) * | 1992-07-03 | 1992-11-19 | Friz Maschinenbau GmbH, 7102 Weinsberg | Vorrichtung zum Auftragen von Klebstoff |
DE19717524C2 (de) * | 1997-04-25 | 2002-04-04 | Roland Man Druckmasch | Farbwerk für eine Druckmaschine |
DE102004032568B4 (de) * | 2004-07-05 | 2007-09-20 | Jakob Weiß & Söhne Maschinenfabrik GmbH | Rakelvorrichtung und Rakelverfahren |
JP2013501128A (ja) * | 2009-08-04 | 2013-01-10 | プリカーサー エナジェティクス, インコーポレイテッド | Cisおよびcigs光起電性装置のためのポリマー前駆体 |
CN101826574A (zh) * | 2010-02-10 | 2010-09-08 | 昆山正富机械工业有限公司 | 非真空制作铜铟镓硒光吸收层的方法 |
CN101820032A (zh) * | 2010-02-11 | 2010-09-01 | 昆山正富机械工业有限公司 | 一种非真空环境下配置铜铟镓硒浆料制作光吸收层的方法 |
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2011
- 2011-05-06 FR FR1101406A patent/FR2974745B1/fr not_active Expired - Fee Related
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2012
- 2012-05-03 KR KR1020137029371A patent/KR20140022060A/ko not_active Application Discontinuation
- 2012-05-03 US US14/113,664 patent/US9305790B2/en not_active Expired - Fee Related
- 2012-05-03 WO PCT/FR2012/000176 patent/WO2012153017A1/fr active Application Filing
- 2012-05-03 CN CN201280021875.9A patent/CN103503170A/zh active Pending
- 2012-05-03 EP EP12728628.4A patent/EP2705542A1/fr not_active Withdrawn
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Also Published As
Publication number | Publication date |
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US20140051245A1 (en) | 2014-02-20 |
WO2012153017A1 (fr) | 2012-11-15 |
US9305790B2 (en) | 2016-04-05 |
FR2974745B1 (fr) | 2013-04-26 |
CN103503170A (zh) | 2014-01-08 |
EP2705542A1 (fr) | 2014-03-12 |
JP5797835B2 (ja) | 2015-10-21 |
KR20140022060A (ko) | 2014-02-21 |
FR2974745A1 (fr) | 2012-11-09 |
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