JP2014519217A5 - - Google Patents

Download PDF

Info

Publication number
JP2014519217A5
JP2014519217A5 JP2014505747A JP2014505747A JP2014519217A5 JP 2014519217 A5 JP2014519217 A5 JP 2014519217A5 JP 2014505747 A JP2014505747 A JP 2014505747A JP 2014505747 A JP2014505747 A JP 2014505747A JP 2014519217 A5 JP2014519217 A5 JP 2014519217A5
Authority
JP
Japan
Prior art keywords
switching device
circuit
auxiliary voltage
semiconductor switch
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014505747A
Other languages
Japanese (ja)
Other versions
JP5990570B2 (en
JP2014519217A (en
Filing date
Publication date
Priority claimed from EP11162774A external-priority patent/EP2515439A1/en
Application filed filed Critical
Publication of JP2014519217A publication Critical patent/JP2014519217A/en
Publication of JP2014519217A5 publication Critical patent/JP2014519217A5/ja
Application granted granted Critical
Publication of JP5990570B2 publication Critical patent/JP5990570B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (9)

電力網に対して器具又はデバイスを接続/切断するためのスイッチング装置であり、前記スイッチング装置は、少なくとも1つの入力端子を介して前記電力網に結合され、前記スイッチング装置は、
双方向性半導体スイッチと、
前記少なくとも1つの入力端子に結合されるバイアス供給回路であって、少なくとも1つのキャパシタを用いて前記電力網から浮遊補助電圧を生成するためのバイアス供給回路と、
前記浮遊補助電圧により給電されるスイッチング制御回路とを有するスイッチング装置であって、
前記スイッチング装置は、分離回路を有し、
前記スイッチング制御回路は、前記バイアス供給回路を介して供給される供給電圧であって、前記電力網から導出される供給電圧の出現、又は、前記分離回路を介して供給される少なくとも1つの制御信号に応答して、前記双方向性半導体スイッチをオンにするように適合され
前記スイッチング制御回路は、ラッチ回路を有し、前記分離回路は、前記ラッチ回路に供給されるべき制御コマンドを生成するための信号処理回路に前記少なくとも1つの制御信号を供給するための信号変圧器又は光学カプラを有することを特徴とする、スイッチング装置。
A switching device for connecting / disconnecting an appliance or device to / from a power grid, the switching device being coupled to the power network via at least one input terminal, the switching device comprising:
A bidirectional semiconductor switch;
A bias supply circuit coupled to the at least one input terminal for generating a floating auxiliary voltage from the power network using at least one capacitor;
A switching device having a switching control circuit that will be powered by the floating auxiliary voltage,
The switching device has a separation circuit;
The switching control circuit is a supply voltage supplied through the bias supply circuit, the appearance of the supply voltage derived from the power grid, or, in at least one control signal supplied via the isolation circuit In response, adapted to turn on the bidirectional semiconductor switch ,
The switching control circuit includes a latch circuit, and the separation circuit supplies the at least one control signal to a signal processing circuit for generating a control command to be supplied to the latch circuit. A switching device comprising an optical coupler .
前記供給電圧の停止に応答して前記半導体スイッチの動作を遅延させるランダマイザを更に有する、請求項1に記載のスイッチング装置。   The switching device according to claim 1, further comprising a randomizer that delays the operation of the semiconductor switch in response to the stop of the supply voltage. 前記半導体スイッチは、少なくとも2つの金属酸化物半導体電界効果トランジスタ又は少なくとも2つの絶縁ゲートバイポーラトランジスタを有する、請求項1に記載のスイッチング装置。   The switching device of claim 1, wherein the semiconductor switch comprises at least two metal oxide semiconductor field effect transistors or at least two insulated gate bipolar transistors. 前記バイアス供給回路は、前記電力網から導出される前記供給電圧を制限するように適合されたツェナーダイオード及び前記少なくとも1つのキャパシタの直列接続と、前記浮動補助電圧を得るために制限された供給電圧を整流するためのダイオードとを有する、請求項1に記載のスイッチング装置。   The bias supply circuit has a series connection of a zener diode and the at least one capacitor adapted to limit the supply voltage derived from the power network, and a supply voltage limited to obtain the floating auxiliary voltage. The switching device according to claim 1, further comprising a diode for rectification. 前記浮動補助電圧をバッファリングするためのバッファキャパシタを更に有する、請求項4に記載のスイッチング装置。   The switching device according to claim 4, further comprising a buffer capacitor for buffering the floating auxiliary voltage. 前記ラッチ回路は、双安定フリップフロップを有する、請求項1乃至5のいずれか一項に記載のスイッチング装置。 The switching device according to any one of claims 1 to 5 , wherein the latch circuit includes a bistable flip-flop. 前記浮動補助電圧を検知し、前記浮動補助電圧が予め決められた閾値よりも低い場合に前記ラッチ回路に制御信号を提供するように適合された監視回路を更に有し、
前記制御信号は、前記半導体スイッチのドミナントなリセットをトリガする、請求項1乃至6のいずれか一項に記載のスイッチング装置。
Further comprising a monitoring circuit adapted to detect the floating auxiliary voltage and to provide a control signal to the latch circuit when the floating auxiliary voltage is lower than a predetermined threshold;
The switching device according to claim 1 , wherein the control signal triggers a dominant reset of the semiconductor switch.
当該装置におけるエネルギストレージ要素のエネルギレベルを決定し、前記エネルギストレージ要素の前記エネルギレベルが予め決められた閾値よりも低い場合に他の制御信号を前記ラッチ回路に供給するように適合された他の監視回路を更に有し、
前記制御信号は、当該装置のエネルギストレージ要素の後の再充電により前記半導体スイッチのターンオンサイクルをトリガする、請求項1乃至7のいずれか一項に記載のスイッチング装置。
Determining the energy level of the energy storage element in the device, said energy level other adapted to other control signals is lower than a predetermined threshold value is supplied to the latch circuit of the energy storage element A monitoring circuit;
8. A switching device according to any one of the preceding claims , wherein the control signal triggers a turn-on cycle of the semiconductor switch by a subsequent recharge of the energy storage element of the device.
前記監視回路は、前記補助電圧がその公称値に達すると前記補助電圧により活性化されるトランジスタを有し、
前記トランジスタは、前記トランジスタが前記ツェナーダイオードを介して流れる電流によって活性化されるように、結合され、
前記トランジスタのコレクタ電圧は、前記ラッチ回路の入力端子に供給される前記監視回路の出力信号である請求項1乃至8のいずれか一項に記載のスイッチング装置。
The monitoring circuit includes a transistor that is activated by the auxiliary voltage when the auxiliary voltage reaches its nominal value;
The transistor is coupled such that the transistor is activated by a current flowing through the Zener diode;
9. The switching device according to claim 1 , wherein a collector voltage of the transistor is an output signal of the monitoring circuit supplied to an input terminal of the latch circuit.
JP2014505747A 2011-04-18 2012-04-10 Solid state switch with reliable stop operation and low control power Active JP5990570B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP11162774A EP2515439A1 (en) 2011-04-18 2011-04-18 Semiconductor switch with reliable blackout behavior and low control power
EP11162774.1 2011-04-18
PCT/IB2012/051741 WO2012143815A1 (en) 2011-04-18 2012-04-10 Semiconductor switch with reliable blackout behavior and low control power

Publications (3)

Publication Number Publication Date
JP2014519217A JP2014519217A (en) 2014-08-07
JP2014519217A5 true JP2014519217A5 (en) 2015-05-28
JP5990570B2 JP5990570B2 (en) 2016-09-14

Family

ID=44513386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014505747A Active JP5990570B2 (en) 2011-04-18 2012-04-10 Solid state switch with reliable stop operation and low control power

Country Status (7)

Country Link
US (1) US9065429B2 (en)
EP (2) EP2515439A1 (en)
JP (1) JP5990570B2 (en)
CN (1) CN103548269B (en)
BR (1) BR112013026515A2 (en)
RU (1) RU2586447C2 (en)
WO (1) WO2012143815A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2012101745B4 (en) * 2012-12-03 2013-04-18 Gerard Lighting Holdings Pty Ltd Reduced dissipation DALI power supply
AU2013263853B1 (en) * 2013-11-28 2014-05-01 Gerard Lighting Holdings Pty Ltd Reduced dissipation DALI power supply
US9537382B2 (en) 2014-07-03 2017-01-03 CT-Concept Technologie GmbH Switch controller with validation circuit for improved noise immunity
CN106160708B (en) * 2015-04-02 2019-09-03 上海诺基亚贝尔股份有限公司 Hardware control circuit and its electronic device
CN109495099B (en) * 2016-08-30 2022-06-21 苏州泰思特电子科技有限公司 Arbitrary pulse width type low power electronic switch
EP3300254B1 (en) * 2016-09-26 2021-07-07 HS Elektronik Systeme GmbH Control circuit for solid state power controller
US10199918B2 (en) 2017-07-10 2019-02-05 Semiconductor Components Industries, Llc Method of forming a semiconductor device
RU2693685C1 (en) * 2018-11-06 2019-07-03 Федеральное государственное учреждение "Федеральный научный центр Научно-исследовательский институт системных исследований Российской академии наук" (ФГУ ФНЦ НИИСИ РАН) Asynchronous logic element of a complementary metal-oxide-semiconductor structure
JP7344381B2 (en) 2019-10-29 2023-09-13 シグニファイ ホールディング ビー ヴィ Control module and method for controlling multiple power switching elements
CN112019207B (en) * 2020-09-07 2024-06-18 中航华东光电有限公司 High-temperature-resistant isolation grid driving circuit suitable for fire-fighting equipment

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170740A (en) * 1978-02-24 1979-10-09 International Telephone And Telegraph Corporation High voltage switch and capacitive drive
CN86206269U (en) * 1986-08-30 1987-09-30 郑州大学 Automatic bread switch of electric network
SU1599980A1 (en) * 1987-12-10 1990-10-15 Ленинградское научно-производственное объединение "Буревестник" Switching device
US5045774A (en) * 1989-12-28 1991-09-03 R. Morley, Inc. Full scale AC or DC power attenuator
US5349242A (en) * 1990-11-15 1994-09-20 Kabushiki Kaisha Toshiba Bidirectional switch circuit with automatic return-current path selector
JPH04229715A (en) * 1990-11-15 1992-08-19 Toshiba Corp Two-way switch circuit
JP3183055B2 (en) * 1994-08-08 2001-07-03 富士電機株式会社 Semiconductor bidirectional switch and driving method thereof
RU2128409C1 (en) * 1996-09-25 1999-03-27 Калужский филиал Московского государственного технического университета им. Н.Э.Баумана Automatic ac load switching device
FR2786629B1 (en) * 1998-11-27 2001-02-09 St Microelectronics Sa CONTROL CIRCUIT OF A SWITCH WITH ALTERNATING SEMICONDUCTOR COMPONENTS
US6603221B1 (en) 1999-04-22 2003-08-05 Zhongdu Liu Solid state electrical switch
US6194881B1 (en) * 1999-05-17 2001-02-27 Nmb (Usa), Inc Switching power supply for lowered distribution system disturbance
JP2001078446A (en) * 1999-06-29 2001-03-23 Toshiba Corp Power supply unit
JP2001196908A (en) * 1999-10-28 2001-07-19 Harumi Suzuki Semiconductor switch circuit for ac circuit
DE10014641C2 (en) 2000-03-24 2002-03-07 Siemens Ag Circuit arrangement with a bidirectional circuit breaker in common collector mode and with an active overvoltage protection device
US6288603B1 (en) * 2000-06-16 2001-09-11 Stmicroelectronics S.R.L. High-voltage bidirectional switch made using high-voltage MOS transistors
US6476674B2 (en) * 2001-01-24 2002-11-05 Momentum Data Systems Method and apparatus for error correction of amplifier
JP3611039B2 (en) * 2001-10-01 2005-01-19 健 鈴木 Standby power circuit
GB0130754D0 (en) * 2001-12-21 2002-02-06 Lucas Industries Ltd Switch control circuit
DE10351621B4 (en) * 2003-11-05 2013-05-16 Osram Gmbh Electronic ballast and method with weiterzuvertet in case of failure of the light-emitting device converter
JP4440680B2 (en) * 2004-03-18 2010-03-24 浜松ホトニクス株式会社 Photodetector
US7595680B2 (en) * 2007-01-25 2009-09-29 Panasonic Corporation Bidirectional switch and method for driving the same
JP4939335B2 (en) * 2007-08-07 2012-05-23 ルネサスエレクトロニクス株式会社 Bidirectional switch circuit
WO2010030862A1 (en) 2008-09-15 2010-03-18 Aclara Power-Line Systems Inc. A method for load control using temporal measurements of energy for individual pieces of equipment
WO2010084444A2 (en) 2009-01-23 2010-07-29 Koninklijke Philips Electronics N.V. Low power consumption in standby mode
JP5501667B2 (en) * 2009-06-17 2014-05-28 パナソニック株式会社 AC / DC switch
EP3220526B1 (en) * 2009-10-20 2019-07-31 Dolby Laboratories Licensing Corporation Digitally controlled loudspeaker protection and attenuation circuit

Similar Documents

Publication Publication Date Title
JP2014519217A5 (en)
RU2013151004A (en) SEMICONDUCTOR SWITCH WITH RELIABLE BEHAVIOR ON POWER OFF AND LOW CONTROL POWER
IN2014DE00541A (en)
CN103683263A (en) Circuit for preventing reverse plug in of direct current power supply and lamp
CN107069655B (en) Voltage protection circuit
JP2017153350A5 (en)
CN103427618A (en) Soft start control circuit
WO2014138693A3 (en) Low threshold voltage comparator
CN103604974A (en) Low-power current detection circuit for current mode DC/DC converter
CN105811949A (en) Bidirectional thyristor trigger-and-throttle circuit and trigger circuit
CN104135257A (en) A novel steady practical controllable silicon triggering circuit
CN103683264A (en) Circuit for preventing reverse plug in of direct current power supply and lamp
CN104600660A (en) Low-power-consumption short circuit protection circuit
CN104914739A (en) Energy saving circuit
CN203289065U (en) Trip circuit for magnetic flux converter
CN204154800U (en) A kind of zero cross detection circuit
CN204190358U (en) A kind of LED power protective circuit turning off PWM chip and export
CN204886148U (en) Light current switch
CN106160713B (en) Quick switching device for magnetic field of magneto-optical trap in cold atom interference type gravimeter
CN204651920U (en) A kind of reverse-connection preventing circuit
CN205407271U (en) Thyristor zero passage controlling means
CN104052144B (en) A kind of electric supply installation with POE power supply and accessory power supply backup
CN104716623B (en) A kind of substitution fuse control circuit
CN204928109U (en) Protective circuit
TWM491939U (en) Relay protection device