CN205407271U

CN205407271U - Thyristor zero passage controlling means

Info

Publication number: CN205407271U
Application number: CN201620160381.4U
Authority: CN
Inventors: 郭桥石; 郭荣剑; 赖斌龙; 邓达
Original assignee: GUANGZHOU JINSHI ELECTRONICS CO Ltd
Current assignee: GUANGZHOU JINSHI ELECTRONICS CO Ltd
Priority date: 2015-03-02
Filing date: 2016-02-26
Publication date: 2016-07-27
Anticipated expiration: 2026-02-26
Also published as: CN105610176A; CN105610176B

Abstract

The utility model discloses thyristor zero passage controlling means belongs to the electricity field, and especially one kind is suitable for the thyristor zero passage controlling means who uses among the thyristor triggering circuit, and it includes the first transistor, second transistor, third transistor, a current limiting element, the output circuit of the first transistor establishes ties in the triggering circuit of the thyristor that required zero passage was controlled, the input of second transistor with the input reverse parallel connection of the third transistor parallel circuit that forms, parallel circuit's one end is passed through current limiting element with the ultor of thyristor is connected, parallel circuit's the other end with the first anode of thyristor connects, the output of second transistor the output of third transistor with the control end of the first transistor is connected. The utility model has the advantages of the circuit is simple, voltage zero passage control accuracy is high, the reliability is high.

Description

IGCT Super-zero control device

Technical field

This utility model IGCT Super-zero control device belongs to electricity field, particularly a kind of IGCT Super-zero control device being suitable in IGBT group loop application.

Background technology

At present at needs in load frequent switching power system, widely use IGCT and resistive, perceptual or capacitive load are carried out switching, at present conventional be the photoelectrical coupler series resistance adopting the built-in zero passages such as MOC3083 as voltage zero-cross control, it has the disadvantage in that

1. photoelectrical coupler is subjected to high voltage, it is easy to punch through damage, and reliability is low.

Its Super-zero control of photoelectrical coupler of the built-in zero passage such as 2.MOC3083 reaches positive and negative twenties volts, and photoelectrical coupler series resistance to there is voltage drop big, IGCT two ends need high voltage could triggering and conducting, have that voltage zero-cross control accuracy is low causes turn on thyristors to shove the shortcoming such as big.

Summary of the invention

The purpose of this utility model is in that to solve the weak point of existing IGCT Super-zero control and provides the IGCT Super-zero control device that a kind of circuit is simple, voltage zero-cross control accuracy is high, reliability is high and can conveniently apply in IGBT group loop.

Realize the purpose of this utility model to reach by the following technical programs:

A kind of IGCT Super-zero control device, it includes the first transistor, transistor seconds, third transistor, a current limiting element；The output loop of described the first transistor is connected in the trigger circuit of the IGCT of required Super-zero control, the input reverse parallel connection of the input of described transistor seconds and described third transistor forms a parallel circuit, one end of described parallel circuit is connected with the second plate of described IGCT by described current limiting element, the other end of described parallel circuit is connected with the first anode of described IGCT, and the outfan of described transistor seconds, the outfan of described third transistor are connected with the control end of described the first transistor.

A kind of IGCT Super-zero control device, described current limiting element is a resistance.

A kind of IGCT Super-zero control device, the colelctor electrode of described the first transistor, the emitter stage of described the first transistor is connected in described trigger circuit, the emitter stage of described transistor seconds is connected with the base stage of described third transistor, the base stage of described transistor seconds is connected with the emitter stage of described third transistor, the colelctor electrode of described transistor seconds, the colelctor electrode of described third transistor is connected with the base stage of described the first transistor, the base stage of described transistor seconds is connected with the described first anode, the emitter stage of described transistor seconds is connected with described second plate by described current limiting element.

A kind of IGCT Super-zero control device, described the first transistor is PNP type triode, and described transistor seconds is PNP type triode, and described third transistor is PNP type triode, and the emitter stage of described the first transistor is connected with the trigger electrode of described IGCT.

A kind of IGCT Super-zero control device, also include the second resistance, the 3rd resistance, the 4th resistance, the two ends of described second resistance are connected with the emitter stage of the base stage of described transistor seconds, described transistor seconds respectively, the two ends of described 3rd resistance are connected with the emitter stage of the base stage of described the first transistor, described the first transistor respectively, and the two ends of described 4th resistance are connected with the colelctor electrode of the base stage of described the first transistor, described the first transistor respectively.

A kind of IGCT Super-zero control device, described transistor seconds, described third transistor detect there is potential difference between the described first anode and described second plate, control the cut-off of described the first transistor.

Operation principle: transistor seconds, third transistor detect there is potential difference between the first anode of IGCT and the second plate of IGCT, controls the first transistor cut-off, it is prevented that IGBT group turns on, and reaches Super-zero control effect.

This utility model IGCT Super-zero control device, has the advantage that use circuit is simple, Super-zero control precision is high, reliability is high and can conveniently apply in IGBT group loop.

Accompanying drawing explanation

Fig. 1 this utility model IGCT Super-zero control device embodiment one circuit theory diagrams.

Detailed description of the invention

The embodiment one of this utility model IGCT Super-zero control device, as shown in Figure 1:

A kind of IGCT Super-zero control device, it includes the first transistor Q1, transistor seconds Q2, third transistor Q3, current limiting element R1 (resistance), second resistance R2, 3rd resistance R3, 4th resistance R4, the output loop of the first transistor Q1 is connected in the trigger circuit of the IGCT TR1 of required triggering, the input reverse parallel connection of the input of transistor seconds Q2 and third transistor Q3 forms a parallel circuit, one end of this parallel circuit is connected by the second plate of current limiting element R1 and IGCT TR1, the other end of this parallel circuit is connected with the first anode of IGCT TR1, the outfan of transistor seconds Q2, the outfan of third transistor Q3 is connected with the control end of the first transistor Q1.nullThe first transistor Q1 is PNP type triode，Transistor seconds Q2 is PNP type triode，Third transistor Q3 is PNP type triode，The emitter stage of the first transistor Q1 is connected with the trigger electrode of IGCT TR1，The colelctor electrode of the first transistor Q1、The emitter stage of the first transistor Q1 is connected in the trigger circuit of IGCT TR1，The emitter stage of transistor seconds Q2 is connected with the base stage of third transistor Q3，The base stage of transistor seconds Q2 is connected with the emitter stage of third transistor Q3，The colelctor electrode of transistor seconds Q2、The colelctor electrode of third transistor Q3 is connected with the base stage of the first transistor Q1，The base stage of transistor seconds Q2 is connected with the first anode of IGCT TR1，The emitter stage of transistor seconds Q2 is connected by the second plate of current limiting element R1 and IGCT TR1，The two ends of the second resistance R2 respectively with the base stage of transistor seconds Q2、The emitter stage of transistor seconds Q2 connects，The two ends of the 3rd resistance R3 respectively with the base stage of the first transistor Q1、The emitter stage of the first transistor Q1 connects，The two ends of the 4th resistance R4 respectively with the base stage of the first transistor Q1、The colelctor electrode of the first transistor Q1 connects.

Operation principle: when potential difference is relatively low between the first anode and the second plate of IGCT TR1 of IGCT TR1, the signal that drives of J1 end input passes through the first anode of IGCT TR1, the trigger electrode of IGCT TR1, the first transistor Q1, J4 end forms trigger circuit, IGCT TR1 passing zero trigger, when between the first anode and the second plate of IGCT TR1 of IGCT TR1, potential difference is higher, transistor seconds Q2, third transistor Q3 detects there is potential difference between the first anode of IGCT TR1 and the second plate of IGCT TR1, control the first transistor Q1 cut-off, prevent IGCT TR1 triggering and conducting, reach the purpose of Super-zero control.

Second resistance R2, the 3rd resistance R3 are for improving the stability of circuit, by selecting current limiting element R1 and the second resistance R2 resistance, it is possible to zero passage voltage is controlled in positive and negative several volts.

Above example, it can be seen that this utility model IGCT Super-zero control device, has the advantage that

1., due to transistor cut-in voltage very low (as long as a few volt of audion cut-in voltage zero point), there is the advantages such as voltage zero-cross control accuracy is high, circuit is simple, easy to use.

2., without high-voltage semi-conductor device, reliability is high.

Claims

1. an IGCT Super-zero control device, is characterized in that: it includes the first transistor, transistor seconds, third transistor, a current limiting element；The output loop of described the first transistor is connected in the trigger circuit of the IGCT of required Super-zero control, the input reverse parallel connection of the input of described transistor seconds and described third transistor forms a parallel circuit, one end of described parallel circuit is connected with the second plate of described IGCT by described current limiting element, the other end of described parallel circuit is connected with the first anode of described IGCT, and the outfan of described transistor seconds, the outfan of described third transistor are connected with the control end of described the first transistor.

2. IGCT Super-zero control device according to claim 1, is characterized in that: described current limiting element is a resistance.

3. IGCT Super-zero control device according to claim 1, it is characterized in that: the colelctor electrode of described the first transistor, the emitter stage of described the first transistor is connected in described trigger circuit, the emitter stage of described transistor seconds is connected with the base stage of described third transistor, the base stage of described transistor seconds is connected with the emitter stage of described third transistor, the colelctor electrode of described transistor seconds, the colelctor electrode of described third transistor is connected with the base stage of described the first transistor, the base stage of described transistor seconds is connected with the described first anode, the emitter stage of described transistor seconds is connected with described second plate by described current limiting element.

4. IGCT Super-zero control device according to claim 3, it is characterized in that: described the first transistor is PNP type triode, described transistor seconds is PNP type triode, described third transistor is PNP type triode, and the emitter stage of described the first transistor is connected with the trigger electrode of described IGCT.

5. IGCT Super-zero control device according to claim 4, it is characterized in that: also include the second resistance, the 3rd resistance, the 4th resistance, the two ends of described second resistance are connected with the emitter stage of the base stage of described transistor seconds, described transistor seconds respectively, the two ends of described 3rd resistance are connected with the emitter stage of the base stage of described the first transistor, described the first transistor respectively, and the two ends of described 4th resistance are connected with the colelctor electrode of the base stage of described the first transistor, described the first transistor respectively.

6. IGCT Super-zero control device according to claim 5, is characterized in that: described transistor seconds, described third transistor detect there is potential difference between the described first anode and described second plate, controls the cut-off of described the first transistor.