CN204103886U - Power device switch amplifies protective circuit - Google Patents
Power device switch amplifies protective circuit Download PDFInfo
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- CN204103886U CN204103886U CN201420506077.1U CN201420506077U CN204103886U CN 204103886 U CN204103886 U CN 204103886U CN 201420506077 U CN201420506077 U CN 201420506077U CN 204103886 U CN204103886 U CN 204103886U
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Abstract
Power device switch amplifies protective circuit, comprises protective circuit; Described protective circuit comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R4, wherein, one end of resistance R1 is connected with the emitter of triode Q1, the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the base stage of triode Q1, the tie point of triode Q2 collector electrode are also connected with the grid of a metal-oxide-semiconductor T1, and the grid of metal-oxide-semiconductor T1 is also connected with resistance R1, and the source electrode of metal-oxide-semiconductor T1 is by resistance R4 ground connection; Amplifying circuit is provided with between the source electrode and resistance R1 of metal-oxide-semiconductor T1.The utility model is protected power device switch, and the input signal that effectively prevent metal-oxide-semiconductor switch weakens phenomenon, improves the quality of circuit output signal, and then improves the Mass Control of metal-oxide-semiconductor switch.
Description
Technical field
The utility model relates to a kind of LED control circuit, is specially power device switch and amplifies protective circuit.
Background technology
In prior art; in the application of power device; very important to the protection of overload and load short circuits; owing to lacking, protective circuit or protective circuit cause not in time often for the damage of some equipment; although some application-specific integrated circuit (ASIC) is integrated with certain defencive function, often Protection parameters is single can not realize designer's intention easily.And not using the scheme possessing defencive function integrated circuit, then power device is in the state of running nakedly, and faces the damage under fortuitous event at any time, even if having a mind to independent design protection circuit, often circuit relative complex, cost is also corresponding higher; In metal-oxide-semiconductor switching circuit; overload protection is even more important, and in production reality, overload protecting circuit has certain weakening effect for the input signal of metal-oxide-semiconductor switch, how can reduce this weakening effect; avoiding the work of metal-oxide-semiconductor switch to be affected, is problem demanding prompt solution.
Utility model content
The purpose of this utility model is to provide a kind of power device switch to amplify protective circuit, to solve the problem in background technology.
For achieving the above object, the utility model provides following technical scheme:
Power device switch amplifies protective circuit, comprises protective circuit; Described protective circuit comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R4, wherein, one end of resistance R1 is connected with the emitter of triode Q1, the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the base stage of triode Q1, the tie point of triode Q2 collector electrode are also connected with the grid of a metal-oxide-semiconductor T1, and the grid of metal-oxide-semiconductor T1 is also connected with resistance R1, and the source electrode of metal-oxide-semiconductor T1 is by resistance R4 ground connection; The grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R4 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected; Amplifying circuit is provided with between the source electrode and resistance R1 of metal-oxide-semiconductor T1, described amplifying circuit draws together electric capacity C1, electric capacity C2, amplifier Q1 and biasing circuit, two earth terminals ground connection respectively of amplifier Q1, the input of amplifier Q1 is connected with electric capacity C1, electric capacity C1 is connected with the base stage of triode Q1, the tie point of triode Q2 collector electrode and resistance R1, and the output of amplifier Q1 is connected with electric capacity C2 and biasing circuit respectively; Described biasing circuit comprises inductance L 1, electric capacity C3, electric capacity C4 and resistance R1, one end of inductance L 1 is connected with the output of amplifier Q1, the other end of inductance L 1 is by electric capacity C3 ground connection, the other end of inductance L 1 is also connected with one end of resistance R1, the other end of resistance R1 is by electric capacity C4 ground connection, and the other end of resistance L1 is also connected with power vd D.
Further, described metal-oxide-semiconductor T1 is N channel-type metal-oxide-semiconductor.
Compared with prior art, be high level when pulse width modulation (PWM) drive singal in utility model works and after being applied to metal-oxide-semiconductor by resistance R1, metal-oxide-semiconductor starts conducting and electric current starts to increase, on resistance R5, pressure drop also synchronously increases, after on resistance R5, pressure drop is greater than triode Q2 conducting voltage, triode Q2 starts conducting, resistance R1 pressure drop starts to increase, after resistance R1 pressure drop exceedes triode Q1 conducting voltage, triode Q1 conducting, the result of triode Q1 conducting makes the base voltage of NPN triode Q2 increase to impel triode Q2 conducting degree to strengthen further, and the increasing of triode Q2 conducting degree impels the further increasing of triode Q1 conducting degree, the result of positive feedback like this is triode Q2, triode Q1 enters saturated self-locking state fast, because NPN triode Q2 is saturated, metal-oxide-semiconductor enters off state, the upper pressure drop of R5 is 0, but triode Q2 base voltage has been raised because triode Q1 is saturated, self-locking state still continues to maintain, metal-oxide-semiconductor is in lasting off state, when PWM drive singal is low level, self-locking state is removed, the input signal that amplifying circuit in the utility model effectively prevent metal-oxide-semiconductor switch weakens phenomenon, improve the quality of circuit output signal, and then improve the Mass Control of metal-oxide-semiconductor switch.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present utility model.
Embodiment
The technological means realized to make the utility model, creation characteristic, reaching object and effect is easy to understand, below in conjunction with concrete diagram, setting forth the utility model further.
Power device switch as shown in Figure 1 amplifies protective circuit, comprises protective circuit; Described protective circuit comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R4, wherein, one end of resistance R1 is connected with the emitter of triode Q1, the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the base stage of triode Q1, the tie point of triode Q2 collector electrode are also connected with the grid of a N channel-type metal-oxide-semiconductor T1, and the grid of metal-oxide-semiconductor T1 is also connected with resistance R1, and the source electrode of metal-oxide-semiconductor T1 is by resistance R4 ground connection; The grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R4 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected; Amplifying circuit is provided with between the source electrode and resistance R1 of metal-oxide-semiconductor T1, described amplifying circuit draws together electric capacity C1, electric capacity C2, amplifier Q1 and biasing circuit, two earth terminals ground connection respectively of amplifier Q1, the input of amplifier Q1 is connected with electric capacity C1, electric capacity C1 is connected with the base stage of triode Q1, the tie point of triode Q2 collector electrode and resistance R1, and the output of amplifier Q1 is connected with electric capacity C2 and biasing circuit respectively; Described biasing circuit comprises inductance L 1, electric capacity C3, electric capacity C4 and resistance R1, one end of inductance L 1 is connected with the output of amplifier Q1, the other end of inductance L 1 is by electric capacity C3 ground connection, the other end of inductance L 1 is also connected with one end of resistance R1, the other end of resistance R1 is by electric capacity C4 ground connection, and the other end of resistance L1 is also connected with power vd D.
Be high level when pulse width modulation (PWM) drive singal and after being applied to metal-oxide-semiconductor by resistance R1, metal-oxide-semiconductor starts conducting and electric current starts to increase, on resistance R5, pressure drop also synchronously increases, after on resistance R5, pressure drop is greater than triode Q2 conducting voltage, triode Q2 starts conducting, resistance R1 pressure drop starts to increase, after resistance R1 pressure drop exceedes triode Q1 conducting voltage, triode Q1 conducting, the result of triode Q1 conducting makes the base voltage of NPN triode Q2 increase to impel triode Q2 conducting degree to strengthen further, and the increasing of triode Q2 conducting degree impels the further increasing of triode Q1 conducting degree, the result of positive feedback like this is triode Q2, triode Q1 enters saturated self-locking state fast, because NPN triode Q2 is saturated, metal-oxide-semiconductor enters off state, the upper pressure drop of R5 is 0, but triode Q2 base voltage has been raised because triode Q1 is saturated, self-locking state still continues to maintain, metal-oxide-semiconductor is in lasting off state, when PWM drive singal is low level, self-locking state is removed.
The input signal that amplifying circuit effectively prevent metal-oxide-semiconductor switch weakens phenomenon, improves the quality of circuit output signal, and then improves the Mass Control of metal-oxide-semiconductor switch.
More than show and describe general principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not restricted to the described embodiments; what describe in above-described embodiment and specification just illustrates principle of the present utility model; under the prerequisite not departing from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall within the scope of claimed the utility model.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (2)
1. power device switch amplifies protective circuit, it is characterized in that, power device switch amplifies protective circuit, comprises protective circuit; Described protective circuit comprises resistance R1, PNP type triode Q1, NPN type triode Q2, resistance R2 and resistance R4, wherein, one end of resistance R1 is connected with the emitter of triode Q1, the other end of resistance R1 is connected with the collector electrode of the base stage of triode Q1, triode Q2, the base stage of triode Q1, the tie point of triode Q2 collector electrode are also connected with the grid of a metal-oxide-semiconductor T1, and the grid of metal-oxide-semiconductor T1 is also connected with resistance R1, and the source electrode of metal-oxide-semiconductor T1 is by resistance R4 ground connection; The grounded emitter of triode Q2, the base stage of triode Q2 is connected with the collector electrode of triode Q1 and resistance R2, resistance R4 one end ground connection, and the other end is connected with resistance R2 one end to hold and is connected; Amplifying circuit is provided with between the source electrode and resistance R1 of metal-oxide-semiconductor T1, described amplifying circuit draws together electric capacity C1, electric capacity C2, amplifier Q1 and biasing circuit, two earth terminals ground connection respectively of amplifier Q1, the input of amplifier Q1 is connected with electric capacity C1, electric capacity C1 is connected with the base stage of triode Q1, the tie point of triode Q2 collector electrode and resistance R1, and the output of amplifier Q1 is connected with electric capacity C2 and biasing circuit respectively; Described biasing circuit comprises inductance L 1, electric capacity C3, electric capacity C4 and resistance R1, one end of inductance L 1 is connected with the output of amplifier Q1, the other end of inductance L 1 is by electric capacity C3 ground connection, the other end of inductance L 1 is also connected with one end of resistance R1, the other end of resistance R1 is by electric capacity C4 ground connection, and the other end of resistance L1 is also connected with power vd D.
2. power device switch according to claim 1 amplifies protective circuit, it is characterized in that: described metal-oxide-semiconductor T1 is N channel-type metal-oxide-semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420506077.1U CN204103886U (en) | 2014-09-04 | 2014-09-04 | Power device switch amplifies protective circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420506077.1U CN204103886U (en) | 2014-09-04 | 2014-09-04 | Power device switch amplifies protective circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204103886U true CN204103886U (en) | 2015-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420506077.1U Expired - Fee Related CN204103886U (en) | 2014-09-04 | 2014-09-04 | Power device switch amplifies protective circuit |
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| Country | Link |
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| CN (1) | CN204103886U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113067472A (en) * | 2021-03-16 | 2021-07-02 | 苏州悉智科技有限公司 | Power semiconductor packaging structure |
-
2014
- 2014-09-04 CN CN201420506077.1U patent/CN204103886U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113067472A (en) * | 2021-03-16 | 2021-07-02 | 苏州悉智科技有限公司 | Power semiconductor packaging structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150114 Termination date: 20170904 |
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| CF01 | Termination of patent right due to non-payment of annual fee |