JP2014510396A - ナノ構造アレイ用の電極構造およびその方法 - Google Patents

ナノ構造アレイ用の電極構造およびその方法 Download PDF

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JP2014510396A
JP2014510396A JP2013552585A JP2013552585A JP2014510396A JP 2014510396 A JP2014510396 A JP 2014510396A JP 2013552585 A JP2013552585 A JP 2013552585A JP 2013552585 A JP2013552585 A JP 2013552585A JP 2014510396 A JP2014510396 A JP 2014510396A
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contact layer
contact
range
another example
thermoelectric element
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Pending
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JP2013552585A
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English (en)
Japanese (ja)
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JP2014510396A5 (de
Inventor
エル． スカリン，マシュー
カリ，マダブ，エイ．
ロリマー，アダム
マッケンヒルン，シルヴェイン
マタス，ガブリエル
カーデル，ジャスティン，タインズ
ワッカー，バーバラ
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Alphabet Energy Inc
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Alphabet Energy Inc
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Priority claimed from US13/331,768 external-priority patent/US20120152295A1/en
Application filed by Alphabet Energy Inc filed Critical Alphabet Energy Inc
Publication of JP2014510396A publication Critical patent/JP2014510396A/ja
Publication of JP2014510396A5 publication Critical patent/JP2014510396A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Powder Metallurgy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
JP2013552585A 2011-02-02 2012-02-01 ナノ構造アレイ用の電極構造およびその方法 Pending JP2014510396A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161438709P 2011-02-02 2011-02-02
US61/438,709 2011-02-02
US13/331,768 2011-12-20
US13/331,768 US20120152295A1 (en) 2010-12-21 2011-12-20 Arrays of filled nanostructures with protruding segments and methods thereof
PCT/US2012/023425 WO2012161757A1 (en) 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof

Publications (2)

Publication Number Publication Date
JP2014510396A true JP2014510396A (ja) 2014-04-24
JP2014510396A5 JP2014510396A5 (de) 2015-03-26

Family

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JP2013552585A Pending JP2014510396A (ja) 2011-02-02 2012-02-01 ナノ構造アレイ用の電極構造およびその方法

Country Status (7)

Country Link
EP (1) EP2671255A4 (de)
JP (1) JP2014510396A (de)
KR (1) KR20140012073A (de)
CN (1) CN103460387A (de)
BR (1) BR112013019766A2 (de)
CA (1) CA2825888A1 (de)
WO (1) WO2012161757A1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992244A (zh) * 2016-01-20 2017-07-28 财团法人工业技术研究院 热电转换装置以及热电转换器
JP2017191816A (ja) * 2016-04-11 2017-10-19 学校法人東京理科大学 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物
WO2019003582A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
WO2019003581A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
KR20210065342A (ko) * 2019-11-27 2021-06-04 한국세라믹기술원 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2807682A1 (de) 2012-01-25 2014-12-03 Alphabet Energy, Inc. Modulare thermoelektrische einheiten für wärmerückgewinnungssysteme und verfahren dafür
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9065017B2 (en) 2013-09-01 2015-06-23 Alphabet Energy, Inc. Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same
CN103579484A (zh) * 2013-11-05 2014-02-12 姚芸 一种温差发电器用金属导体电极

Citations (3)

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JP2001068746A (ja) * 1999-08-24 2001-03-16 Seiko Instruments Inc 熱電変換素子とその製造方法
WO2008060282A1 (en) * 2006-11-17 2008-05-22 General Electric Company Thermal transfer and power generation devices and methods of making the same
JP2009043783A (ja) * 2007-08-06 2009-02-26 Denso Corp 積層型熱電変換素子及びその製造方法

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CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US8154093B2 (en) * 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
JP2004031696A (ja) * 2002-06-26 2004-01-29 Kyocera Corp 熱電モジュール及びその製造方法
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US6969679B2 (en) * 2003-11-25 2005-11-29 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US8039726B2 (en) * 2005-05-26 2011-10-18 General Electric Company Thermal transfer and power generation devices and methods of making the same
US8049203B2 (en) * 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US20080178920A1 (en) * 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
FR2923601B1 (fr) * 2007-11-12 2010-01-01 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation
TWI401830B (zh) * 2008-12-31 2013-07-11 Ind Tech Res Inst 低熱回流之熱電奈米線陣列及其製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068746A (ja) * 1999-08-24 2001-03-16 Seiko Instruments Inc 熱電変換素子とその製造方法
WO2008060282A1 (en) * 2006-11-17 2008-05-22 General Electric Company Thermal transfer and power generation devices and methods of making the same
JP2009043783A (ja) * 2007-08-06 2009-02-26 Denso Corp 積層型熱電変換素子及びその製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992244A (zh) * 2016-01-20 2017-07-28 财团法人工业技术研究院 热电转换装置以及热电转换器
CN106992244B (zh) * 2016-01-20 2019-01-18 财团法人工业技术研究院 热电转换装置以及热电转换器
JP2017191816A (ja) * 2016-04-11 2017-10-19 学校法人東京理科大学 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物
WO2019003582A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
WO2019003581A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
KR20210065342A (ko) * 2019-11-27 2021-06-04 한국세라믹기술원 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우
KR102265762B1 (ko) 2019-11-27 2021-06-15 한국세라믹기술원 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우

Also Published As

Publication number Publication date
CA2825888A1 (en) 2012-11-29
BR112013019766A2 (pt) 2019-09-24
WO2012161757A1 (en) 2012-11-29
EP2671255A4 (de) 2015-10-28
EP2671255A1 (de) 2013-12-11
KR20140012073A (ko) 2014-01-29
CN103460387A (zh) 2013-12-18

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