JP2014234344A5 - - Google Patents

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Publication number
JP2014234344A5
JP2014234344A5 JP2013212620A JP2013212620A JP2014234344A5 JP 2014234344 A5 JP2014234344 A5 JP 2014234344A5 JP 2013212620 A JP2013212620 A JP 2013212620A JP 2013212620 A JP2013212620 A JP 2013212620A JP 2014234344 A5 JP2014234344 A5 JP 2014234344A5
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JP
Japan
Prior art keywords
raw material
thin film
material solution
film
forming chamber
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Application number
JP2013212620A
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English (en)
Japanese (ja)
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JP6233959B2 (ja
JP2014234344A (ja
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Priority to JP2013212620A priority Critical patent/JP6233959B2/ja
Priority claimed from JP2013212620A external-priority patent/JP6233959B2/ja
Publication of JP2014234344A publication Critical patent/JP2014234344A/ja
Publication of JP2014234344A5 publication Critical patent/JP2014234344A5/ja
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Publication of JP6233959B2 publication Critical patent/JP6233959B2/ja
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JP2013212620A 2013-10-10 2013-10-10 酸化物結晶薄膜の製造方法 Active JP6233959B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013212620A JP6233959B2 (ja) 2013-10-10 2013-10-10 酸化物結晶薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013212620A JP6233959B2 (ja) 2013-10-10 2013-10-10 酸化物結晶薄膜の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2013118358A Division JP5397794B1 (ja) 2013-06-04 2013-06-04 酸化物結晶薄膜の製造方法

Publications (3)

Publication Number Publication Date
JP2014234344A JP2014234344A (ja) 2014-12-15
JP2014234344A5 true JP2014234344A5 (fr) 2016-07-21
JP6233959B2 JP6233959B2 (ja) 2017-11-22

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ID=52137302

Family Applications (1)

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JP2013212620A Active JP6233959B2 (ja) 2013-10-10 2013-10-10 酸化物結晶薄膜の製造方法

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JP (1) JP6233959B2 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017128492A (ja) * 2016-01-15 2017-07-27 株式会社Flosfia 結晶性酸化物膜
US20180097073A1 (en) * 2016-10-03 2018-04-05 Flosfia Inc. Semiconductor device and semiconductor system including semiconductor device
JP2019142756A (ja) * 2018-02-22 2019-08-29 トヨタ自動車株式会社 成膜方法
CN110416334B (zh) * 2018-08-31 2021-10-29 西安电子科技大学 一种基于异质外延Ga2O3薄膜深紫外光电探测器的制备方法
EP3960914A4 (fr) 2019-04-24 2022-12-28 NGK Insulators, Ltd. Film semi-conducteur
CN116157360A (zh) * 2020-08-20 2023-05-23 信越化学工业株式会社 成膜方法及原料溶液

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003064475A (ja) * 2001-08-27 2003-03-05 Asahi Denka Kogyo Kk 化学気相成長用原料及びこれを用いた薄膜の製造方法
JP4587633B2 (ja) * 2002-02-26 2010-11-24 株式会社野田スクリーン 薄膜形成方法及び成膜装置
JP4705340B2 (ja) * 2004-06-14 2011-06-22 日本曹達株式会社 酸化インジウム膜の製造方法
JP2010215982A (ja) * 2009-03-18 2010-09-30 Tosoh Corp ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜
JP5810445B2 (ja) * 2010-09-03 2015-11-11 株式会社Flosfia 多孔質体および濾過フィルタの製造方法
JP5793732B2 (ja) * 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP5881475B2 (ja) * 2012-03-05 2016-03-09 タテホ化学工業株式会社 酸化マグネシウム薄膜の製造方法
JP2014131020A (ja) * 2012-11-29 2014-07-10 Kumamoto Univ ＣｕＯ薄膜製造方法及びＣｕＯ薄膜

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