JP2014234344A5 - - Google Patents
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- Publication number
- JP2014234344A5 JP2014234344A5 JP2013212620A JP2013212620A JP2014234344A5 JP 2014234344 A5 JP2014234344 A5 JP 2014234344A5 JP 2013212620 A JP2013212620 A JP 2013212620A JP 2013212620 A JP2013212620 A JP 2013212620A JP 2014234344 A5 JP2014234344 A5 JP 2014234344A5
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- thin film
- material solution
- film
- forming chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000002994 raw material Substances 0.000 claims 17
- 238000000034 method Methods 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 9
- 239000010408 film Substances 0.000 claims 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 239000010419 fine particle Substances 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 239000012159 carrier gas Substances 0.000 claims 2
- 229910052593 corundum Inorganic materials 0.000 claims 2
- 239000010431 corundum Substances 0.000 claims 2
- 150000002259 gallium compounds Chemical class 0.000 claims 2
- 150000002472 indium compounds Chemical class 0.000 claims 2
- UVLYPUPIDJLUCM-UHFFFAOYSA-N indium;hydrate Chemical compound O.[In] UVLYPUPIDJLUCM-UHFFFAOYSA-N 0.000 claims 2
- 125000002524 organometallic group Chemical group 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 claims 1
- -1 iodide ions Chemical class 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013212620A JP6233959B2 (ja) | 2013-10-10 | 2013-10-10 | 酸化物結晶薄膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013212620A JP6233959B2 (ja) | 2013-10-10 | 2013-10-10 | 酸化物結晶薄膜の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013118358A Division JP5397794B1 (ja) | 2013-06-04 | 2013-06-04 | 酸化物結晶薄膜の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014234344A JP2014234344A (ja) | 2014-12-15 |
| JP2014234344A5 true JP2014234344A5 (cg-RX-API-DMAC7.html) | 2016-07-21 |
| JP6233959B2 JP6233959B2 (ja) | 2017-11-22 |
Family
ID=52137302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013212620A Active JP6233959B2 (ja) | 2013-10-10 | 2013-10-10 | 酸化物結晶薄膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6233959B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017128492A (ja) | 2016-01-15 | 2017-07-27 | 株式会社Flosfia | 結晶性酸化物膜 |
| US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
| JP2019142756A (ja) * | 2018-02-22 | 2019-08-29 | トヨタ自動車株式会社 | 成膜方法 |
| CN110416334B (zh) * | 2018-08-31 | 2021-10-29 | 西安电子科技大学 | 一种基于异质外延Ga2O3薄膜深紫外光电探测器的制备方法 |
| JP6784870B1 (ja) * | 2019-04-24 | 2020-11-11 | 日本碍子株式会社 | 半導体膜 |
| US12247285B2 (en) | 2020-08-20 | 2025-03-11 | Shin-Etsu Chemical Co., Ltd. | Film-forming method and raw material solution |
| KR20250162526A (ko) * | 2023-03-07 | 2025-11-18 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 성막용 노즐 및 성막장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003064475A (ja) * | 2001-08-27 | 2003-03-05 | Asahi Denka Kogyo Kk | 化学気相成長用原料及びこれを用いた薄膜の製造方法 |
| JP4587633B2 (ja) * | 2002-02-26 | 2010-11-24 | 株式会社野田スクリーン | 薄膜形成方法及び成膜装置 |
| JP4705340B2 (ja) * | 2004-06-14 | 2011-06-22 | 日本曹達株式会社 | 酸化インジウム膜の製造方法 |
| JP2010215982A (ja) * | 2009-03-18 | 2010-09-30 | Tosoh Corp | ルテニウム錯体有機溶媒溶液を用いたルテニウム含有膜製造方法、及びルテニウム含有膜 |
| JP5810445B2 (ja) * | 2010-09-03 | 2015-11-11 | 株式会社Flosfia | 多孔質体および濾過フィルタの製造方法 |
| JP5793732B2 (ja) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP5881475B2 (ja) * | 2012-03-05 | 2016-03-09 | タテホ化学工業株式会社 | 酸化マグネシウム薄膜の製造方法 |
| JP2014131020A (ja) * | 2012-11-29 | 2014-07-10 | Kumamoto Univ | ＣｕＯ薄膜製造方法及びＣｕＯ薄膜 |
-
2013
- 2013-10-10 JP JP2013212620A patent/JP6233959B2/ja active Active
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