JP2014187269A - Manufacturing method of semiconductor device, substrate processing apparatus, and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the operation speed of a gate and lower a leakage current.SOLUTION: A manufacture method of a semiconductor device includes the steps of: carrying a substrate where a high dielectric constant film and a metal containing film are formed into a processing chamber 10; supplying a process gas to an area above the substrate 11 carried into the processing chamber 10; and supplying micro waves to the substrate 11. The high dielectric constant film is formed on the substrate 11 through a silicon oxide film and the metal containing film is formed on the high dielectric constant film.

Description

  The present invention relates to a method for manufacturing a semiconductor device that mainly heats a substrate using microwaves, a substrate processing apparatus, and a program.

  In order to increase the integration density and speed of semiconductor integrated circuits, MOS (Metal Oxide Semiconductor) transistors are being reduced.

  However, when the thickness of the silicon oxide film (SiO film) as the gate insulating film is 2 nm or less, the tunnel current flowing between the gate electrode and the silicon substrate increases, and the gate leakage current increases.

  As a countermeasure against the gate leakage current, a high dielectric constant insulator such as hafnium oxide (HfO) having a dielectric constant higher than that of silicon oxide is used for the gate insulating film, and an equivalent silicon oxide film thickness (EOT: Equivalent Oxide) is used. A structure in which the gate insulating film thickness is physically increased while suppressing (Thickness) is used. In the case of a high dielectric constant insulator having a dielectric constant k times that of silicon oxide, the EOT becomes the same value even when the thickness is multiplied by k, and the controllability of the gate electrode is maintained. In order to keep the surface state of the silicon substrate in good condition, a high dielectric constant insulating film (eg, HfO film) is deposited on a thin silicon oxide film which is usually thermally oxidized, and then a titanium aluminum nitride film (TiAlN) is generally used as the upper electrode. Film) and a titanium nitride film (TiN film) are deposited to form a transistor.

  However, in the above method, when HfO is deposited, a silicon oxide film (SiO film) is generated by initial oxidation, and there is a limit to thinning the SiO film. In order to improve the operation speed of the gate, it is preferable to make the SiO film immediately below the HfO film thin.

  In the following patent document, a processing chamber for processing a substrate, a substrate support for supporting the substrate in the processing chamber, a substrate loading / unloading opening that opens on the wall surface of the processing chamber, and a substrate loading / unloading port are closed. In some cases, an opening / closing portion constituting a part of the inner wall surface of the processing chamber and a microwave supply portion for supplying microwaves to the processing chamber are supported on the substrate support portion of the inner wall surface of the processing chamber. Further, there is disclosed a substrate processing apparatus in which a surface connecting a surface facing a processing surface of a substrate and a surface constituting an opening / closing portion is configured to be inclined with respect to the processing surface of the substrate.

JP 2011-66254 A

  It is an object of the present invention to provide a semiconductor device manufacturing method, a substrate processing apparatus, and a program that improve the gate operating speed and reduce the leakage current.

  The first aspect includes a step of carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber, a step of supplying a processing gas onto the substrate carried into the processing chamber, And a step of supplying a microwave to the substrate.

  In the second aspect, a processing chamber into which a substrate on which a high dielectric constant film and a metal-containing film are formed is carried in, a gas supply unit that supplies a processing gas to the substrate, and a microwave is supplied to the substrate And a control unit that controls the gas supply unit and the microwave supply unit.

  The third aspect includes a procedure for carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber, a procedure for supplying a processing gas onto the substrate carried into the processing chamber, A program for causing a computer to execute a procedure for supplying microwaves to the substrate.

  According to the present invention, it is possible to provide a semiconductor device manufacturing method, a substrate processing apparatus, and a program that improve the gate operating speed and reduce the leakage current.

It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on embodiment of this invention. It is a block diagram which shows the hardware constitutions of the control part used for the substrate processing apparatus which concerns on embodiment of this invention. It is sectional drawing which shows the laminated structure of the board | substrate used for embodiment of this invention. It is a flowchart of the substrate processing process which concerns on embodiment of this invention. It is an experimental example using the substrate processing process which concerns on embodiment of this invention, (a) is sectional drawing of the board | substrate before an annealing process, (b) is a microwave annealing process to the board | substrate of (a) FIG. 6C is a cross-sectional view after the thermal annealing process is performed on the substrate of FIG.

  A configuration of a substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a vertical sectional view of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 100 includes a processing chamber 10, a transfer chamber (not shown), and a microwave supply unit 19. The processing chamber 10 processes a wafer 11 as a substrate. The microwave supply unit 19 includes a waveguide 21 and a waveguide port 22. The microwave generator 20 may be provided in the microwave supply unit 19.

  The microwave generation unit 20 generates, for example, a fixed frequency microwave or a variable frequency microwave. As the microwave generation unit 20, for example, a microtron, a klystron, a gyrotron, or the like is used. The microwave generated by the microwave generation unit 20 is radiated into the processing chamber 10 through the waveguide 21 from the waveguide port 22 communicating with the processing chamber 10. Thereby, the efficiency of dielectric heating can be raised. The waveguide 21 is provided with a matching mechanism 26 that reduces the reflected power inside the waveguide 21.

  A microwave supply unit 19 is configured by the microwave generation unit 20, the waveguide 21, the waveguide port 22, and the matching mechanism 26.

  The processing container 18 forming the processing chamber 10 is made of, for example, a metal material such as aluminum (Al) or stainless steel (SUS), and has a structure that shields the processing chamber 10 from the outside in a microwave.

  In the processing chamber 10, substrate support pins 13 are provided as a substrate support mechanism for supporting the wafer 11 with its upper end 13 a.

  The substrate support pins 13 are made of a material having low heat conductivity and good electrical insulation, such as quartz, ceramics, sapphire, or Teflon (registered trademark). By setting it as such a material, it can suppress that the board | substrate support pin 13 itself is heated, and also can suppress the thermal escape from the wafer 11 to the board | substrate support pin 13. FIG. Since heat escape can be suppressed, the wafer surface can be heated uniformly. Further, by preventing the substrate support pins 13 from being heated, the substrate support pins 13 can be prevented from being thermally deformed, and as a result, the wafer height can be made constant due to the heat deformation, so that the wafer heating around one slot is reproduced. It becomes possible to heat with good performance. The substrate support pins 13 are composed of a plurality (three in this embodiment).

A gas supply pipe 52 for supplying a gas such as nitrogen (N ₂ ) is provided on the side wall of the processing chamber 10. The gas supply pipe 52 is provided with a gas supply source 55, a flow rate control device 54 that adjusts the gas flow rate, and an opening / closing valve 53 that opens and closes the gas flow path in order from the upstream side. The gas is supplied from the gas supply pipe 52 into the processing chamber 10 or the supply is stopped. The gas supplied from the gas supply pipe 52 is used to lower the oxygen concentration in the processing chamber 10, cool the wafer 11, or push out the gas or atmosphere in the processing chamber 10 as a purge gas. .

  A gas supply unit 50 is configured by the gas supply pipe 52, the opening / closing valve 53, the flow rate control device 54, and the gas supply source 55. The flow control device 54 and the opening / closing valve 53 are electrically connected to the control unit 80 and controlled by the control unit 80.

  As shown in FIG. 1, for example, a gas discharge pipe 62 for exhausting the gas in the processing chamber 10 is provided on the side wall of the processing chamber 10 below the processing container 18 that is a rectangular parallelepiped. The gas discharge pipe 62 is provided with a vacuum pump 64 as an exhaust device and a pressure adjusting valve 63 in order from the upstream side. By adjusting the opening of the pressure adjusting valve 63, the pressure in the processing chamber 10 is adjusted. Is adjusted to a predetermined value.

  The gas exhaust pipe 62, the pressure adjustment valve 63 and the vacuum pump 64 constitute a gas exhaust unit 60. The pressure adjustment valve 63 is electrically connected to the control unit 80, and pressure adjustment control is performed by the control unit 80.

  As shown in FIG. 1, a wafer transfer port 71 for transferring the wafer 11 into and out of the processing chamber 10 is provided on one side surface of the processing container 18. A gate valve 72 is provided at the wafer transfer port 71, and the gate valve 72 is opened by the gate valve driving unit 73 so that the processing chamber 10 and the transfer chamber communicate with each other. The wafer transfer port 71, the gate valve 72, and the gate valve drive unit 73 constitute a wafer transfer unit. A transfer robot (not shown) for transferring the wafer 11 is provided in the transfer chamber. The transfer robot is provided with a transfer arm that supports the wafer 11 when the wafer 11 is transferred. By opening the gate valve 72, the wafer 11 can be transferred between the processing chamber 10 and the transfer chamber by the transfer robot.

FIG. 2 is a block diagram illustrating a hardware configuration of the control unit 80.
The control unit 80 is provided with an arithmetic device 102, a storage device 104, and an I / O port 106 as an input / output unit so as to exchange data with each other via an internal bus 108.

  As the arithmetic unit 102, a CPU or a dedicated arithmetic circuit is used.

  The storage device 104 has an internal recording medium 105. In the internal recording medium 105, a control program for controlling the operation of the substrate processing apparatus 100, a process recipe including substrate processing steps and conditions described later, and the like are stored in a readable manner.

  The process recipe is a combination of the steps so that a predetermined result can be obtained by causing the control unit 80 to execute each step in the substrate processing process, and functions as a program. These process recipes, control programs, and the like are collectively referred to simply as programs. Here, when a program is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both.

  The I / O port 106 is connected to the microwave generation unit 20, the open / close valve 53, the flow rate control device 54, the pressure adjustment valve 63, the vacuum pump 64, the gate valve drive unit 73, the transfer robot, etc. Yes.

  The control unit 80 is connected to the network 110. The network 110 is configured by a network provided in a semiconductor manufacturing factory, the Internet, or the like.

  Further, the input / output device 204 and the external storage device 206 are connected to the control unit 80 via the internal bus 108. Here, the input / output device 204 may be integrated with the control unit 80. As the input / output device 204, a display, a touch panel, an operation terminal, a keyboard, a mouse, or the like is used. The external storage device 206 has an external recording medium 207. In the external recording medium 207, a control program for controlling the operation of the substrate processing apparatus 100, a process recipe including substrate processing steps and conditions described later, and the like are readable.

  In other words, the control unit 80 causes the arithmetic unit 102 to execute the program stored in the internal recording medium 105 of the storage device 104, thereby causing the microwave generation unit 20, the opening / closing valve 53, the flow rate to flow through the I / O port 106. The operation of each component such as the control device 54, the pressure adjusting valve 63, the vacuum pump 64, the gate valve driving unit 73, and the transfer robot is controlled. The program may be stored in an external storage device 206 provided outside the control unit 80, and may be read out and executed from the external storage device 206. The program recorded in the external storage device 206 is stored in the internal recording medium. The program may be moved to 105, read from the internal recording medium 105, and executed. The program may be executed after being stored in the internal recording medium 105 from the network 110 connected to the control unit 80.

  Here, as the internal recording medium 105, for example, a hard disk, a CD-ROM, a flash memory, or the like is used. As the external recording medium 207, for example, a floppy (registered trademark) disk, CD-ROM, MO, flash memory, or the like is used.

  FIG. 3 is a cross-sectional view showing a main part laminated structure of the wafer 11 as a substrate to be processed used in the embodiment of the present invention.

  As shown in FIG. 3, a high dielectric constant gate insulating film is formed on the wafer 11. Specifically, an SiO film 112 as an HfO initial silicon oxide film is formed on the surface of the silicon wafer 111, and an HfO film 114 as a high dielectric constant film is formed on the SiO film 112. On the HfO film 114, a TiAlN film 116 or a TiN film 117 that is a titanium (Ti) -containing film as a metal-containing film is formed.

  The SiO film 112 and the HfO film 114 are formed by an atomic layer deposition method (ALD method: Atomic Layer Deposition method). Here, the SiO film 112 is an interface oxide film formed between the silicon wafer 111 and the HfO film 114 by forming the HfO film.

  Next, the substrate processing operation of this embodiment in the substrate processing apparatus 100 will be described. FIG. 4 is a flowchart of the substrate processing process according to the present embodiment. In addition, the substrate processing of this embodiment constitutes one process among a plurality of processes for manufacturing a semiconductor device. The operation of each unit to be described later is controlled by the control unit 80.

<Substrate carrying-in process, step S10>
In the substrate loading process for loading the wafer 11 into the processing chamber 10, first, the gate valve 72 is opened, and the processing chamber 10 and the transfer chamber are communicated. Next, the wafer 11 to be processed (processing substrate) is carried into the processing chamber 10 from the transfer chamber by the transfer robot.

<Substrate Placement Step, Step S11>
The wafer 11 carried into the processing chamber 10 is placed on the upper end 13 a of the substrate support pin 13 and supported by the substrate support pin 13 by the transfer robot. Next, when the transfer robot returns from the processing chamber 10 to the transfer chamber, the gate valve 72 is closed.

<Nitrogen gas supply process, step S12>
Next, the inside of the processing chamber 10 is replaced with a nitrogen (N ₂ ) atmosphere. Since the atmospheric atmosphere outside the processing chamber 10 is involved when the wafer 11 is loaded, the inside of the processing chamber 10 is replaced with an N ₂ atmosphere so that moisture and oxygen in the atmospheric atmosphere do not affect the process.

<Gas exhaust process, step S13>
The open / close valve 53 is opened to supply N ₂ gas from the gas supply pipe 52 into the processing chamber 10, and the pressure in the processing chamber 10 is adjusted to a predetermined value by the pressure adjustment valve 63, while the gas discharge pipe 62 Then, the gas (atmosphere) in the processing chamber 10 is discharged by the vacuum pump 64.

That is, before the step of supplying the microwave, the oxygen concentration in the processing chamber 10 is set to a low oxygen concentration, preferably, the oxygen concentration in the processing chamber 10 is set to 1 ppm or less. In the present embodiment, the atmosphere is replaced with the N ₂ atmosphere. However, the present invention is not limited to this, and an inert gas atmosphere or a vacuum atmosphere may be used. In order to promote the reduction of the SiO film 112 formed between the HfO film 114 and the silicon wafer 111, a reducing gas may be added here. As the reducing gas, for example, hydrogen (H ₂ ) gas or ammonia (NH ₃ ) gas is used.

<Microwave supply process, step S14>
Next, the microwave generated by the microwave generation unit 20 is supplied from the waveguide port 22 into the processing chamber 10 and irradiated. At this time, the pressure in the processing chamber 10 is controlled so that plasma is not generated in the processing chamber 10. The frequency of the microwave is 1 GHz to 100 GHz, preferably 2 GHz to 8 GHz, and is set to a desired frequency of, for example, 2.45 GHz, 5.8 GHz to 7 GHz. In this microwave irradiation, the microwave and the processing chamber atmosphere are adjusted so that the HfO film 114 is heated more than the TiAlN film 116 or the TiN film 117.

  A dielectric such as a high dielectric constant film (hereinafter referred to as a High-k film) has a different microwave absorption rate depending on the dielectric constant. The higher the dielectric constant, the easier it is to absorb microwaves. Our research has shown that when a wafer is irradiated with high-power microwaves, the dielectric film on the wafer is heated and modified. Heating by microwaves is dielectric heating by dielectric constant ε and dielectric loss tangent tan δ. When materials having different physical properties are heated at the same time, only a material that is easily heated, that is, a material having a higher dielectric constant, is selectively heated to a higher temperature. It is known that it can be heated.

Hereinafter, annealing of the high-k film will be described. A high-k film has a higher dielectric constant ε than silicon, which is the substrate material of the wafer. For example, although the relative dielectric constant epsilon _r of the silicon is 3.9, the relative dielectric constant epsilon _r of the HfO 2 film is a High-k film is the dielectric constant epsilon _r of 25, ZrO film is 35. Therefore, when the wafer on which the High-k film is formed is irradiated with microwaves, the High-k film is selectively heated to a higher temperature.

  As described above, after the substrate is heated by supplying the microwave for a predetermined time, the supply of the microwave is stopped.

<Substrate unloading step, step S15>
When the microwave supply process is completed, the heat-treated wafer 11 is unloaded from the process chamber 10 into the transfer chamber by a procedure reverse to the procedure shown in the substrate carry-in process described above.

<Experimental example>
FIG. 5A shows the wafer 11 as a technique for reducing the SiO film 112 as an interfacial oxide film and an annealing technique using microwaves instead of the TiAlN film 116 and the TiN film 117 on the uppermost surface of the wafer shown in FIG. Therefore, FIG. 5B is a cross-sectional view showing a laminated structure in which an amorphous silicon film (a-Si film) 118 is formed. FIG. 5B is a diagram showing a microwave annealing process performed on the wafer 11 in FIG. FIG. 5C is a cross-sectional view after performing thermal annealing at 650 ° C. on the wafer 11 of FIG. 5A. By forming an amorphous silicon film (a-Si film) 118 as a cap film on the HfO film 114, oxidation species are prevented from being drawn by the environment in the processing chamber 10.

  As shown in FIG. 5A, the thickness of the SiO film 112 before each annealing treatment is 1.2 nm, the thickness of the HfO film 114 is 1.5 nm, and the thickness of the a-Si film 118 is 13 nm. .5 nm.

  By performing the annealing process, the a-Si film 118 is crystallized, and a polysilicon (Poly-Si) film 119 is formed between the a-Si film 118 and the HfO film 114.

  As shown in FIG. 5B, after the microwave annealing process, by supplying the microwave, the thickness of the SiO film 112 is 0.7 nm, the thickness of the HfO film 114 is 1.6 nm, The thickness of the Poly-Si film 119 was 12.2 nm, and the thickness of the a-Si film 118 was 1.5 nm. That is, the film thickness of the SiO film 112 formed on the surface of the silicon wafer 111 was reduced from 1.2 nm to 0.7 nm. This is because when the microwave is supplied to the wafer 11, the interface dipole is selectively heated, the SiO film 112 is reduced, the oxygen (O) molecules are partially taken into the HfO film, and part is the HfO film 114. It is considered that the crystal was taken into the crystallized Poly-Si film 119 and the a-Si film 118, and part thereof was released to the outside.

  On the other hand, as shown in FIG. 5C, after the thermal annealing process, the thickness of the SiO film 112 is 1.2 nm, the thickness of the HfO film 114 is 1.5 nm, and the thickness of the Poly-Si film 119. The thickness was 12.0 nm, and the thickness of the a-Si film 118 was 1.7 nm. That is, the film thickness of the SiO film 112 formed on the surface of the wafer 11 remained unchanged at 1.2 nm.

  Further, compared to the Poly-Si film 119 after the microwave annealing treatment of FIG. 5B, the Poly-Si film 119 after the thermal annealing treatment of FIG. It is estimated that the thermal energy received by 11 is greater in the thermal annealing process. However, since the change of the SiO film 112 as the interface oxide film is larger in the microwave annealing process, it can be said that the effect is an interface oxide film reduction effect using the selectivity of the interface dipole by the microwave.

  That is, by supplying microwaves to the wafer 11 showing the laminated structure of the high dielectric constant gate insulating film, the thickness of the SiO film 112 as the interface oxide film can be reduced without breaking the laminated film state. I understood.

  Therefore, according to the embodiment of the present invention, the silicon oxide film (interface oxide film) immediately below the high dielectric constant film can be reduced by performing the microwave annealing treatment.

  Further, according to the embodiment of the present invention, the reduction of the SiO film (interfacial oxide film) can improve the EOT with reduced efficiency and improve the operation speed of the transistor. In addition, leakage current can be suppressed by using a high dielectric constant insulator for the gate insulating film. In addition, since the interface dipole is selectively heated by the microwave, the thermal load on the peripheral film can be reduced, and the crystallization of the laminated film can be promoted. Further, since a complicated process is not required, it can be adopted at a low cost, and the device cost can be reduced.

  It goes without saying that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention. In each of the above-described embodiments, the case where processing is performed on a wafer has been described. However, a processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

  In addition, the case of annealing the wafer having a high dielectric constant film as in this embodiment (crystallization control, impurity reduction, deficient oxygen supply) has been described. However, the present invention is not limited to this, and impurities implanted into the bear silicon substrate are not limited. Activation, activation of Poly-Si and control of crystallization shape, cure of Polymer, gain size control of Cu wiring, defect repair of Epi-Si or Epi-SiGe, application of amorphous or poly structure to crystallization. The LED process can be applied to a substrate processing apparatus and a substrate manufacturing method for improving the crystallinity of GaN.

  Alternatively, a plurality of fixed frequency power supplies may be provided, and microwaves having different frequencies may be switched and supplied from each, or a plurality of microwaves having different frequencies may be simultaneously supplied and processed.

  According to this embodiment, it is not necessary to raise the processing substrate and the processing environment temperature to the same temperature as the reaction temperature of the processing film due to the microwave material selectivity, and the processing film can be efficiently processed while reducing the thermal load applied to the substrate. Can be modified.

In the above-described embodiment, the hafnium oxide (HfO _x ) film is used as the high dielectric constant film. However, a hafnium silicon oxide (HfSiO) film or a hafnium aluminum oxide (HfAlO) film, which is an example of this, may be used. Good. Further, the present invention is not limited to this, and a zirconium oxide (ZrO _x ) film, a zirconium aluminum oxide (ZrAlO) film, an aluminum oxide (Al _x O _y ) film, a lanthanum oxide (La _x O _y ) film, and the like thereof are also included. For example, it can be applied to a lanthanum aluminum oxide (LaAlO) film, a strontium titanate (SrTiO) film, an yttrium oxide (YO) film, a barium titanate (BaTiO) film, or a high dielectric constant film in which these are laminated or combined. it can. Further, a film in which these materials are combined with silicon oxide (SiO) or silicon nitride (SiN) may be used. For example, a hafnium silicon oxide (HfSiO) film, a hafnium silicon oxynitride (HfSiON) film, or a zirconium silicon oxide film may be used. A (ZrSiO) film may be used.

  In the above-described embodiment, a titanium aluminum nitride (TiAlN) film or a titanium nitride (TiN) film is used as the metal-containing film. However, the present invention is not limited thereto, and a titanium aluminum carbonized (TiAlC) film or a titanium aluminum carbonitride ( TiAlCN) film, titanium carbonitride (TiCN) film, tantalum aluminum nitride (TaAlN) film, tantalum nitride (TaN) film, tantalum aluminum carbonitride (TaAlCN) film, tantalum carbonitride (TaCN) film, tungsten aluminum nitride (WAlN) Film, tungsten nitride (WN) film, tungsten aluminum carbonitride (WAlCN) film, tungsten carbonitride (WCN) film, ruthenium (Ru) film, ruthenium oxide (RuO) film, cobalt (Co) film, nickel (Ni) film , Tungsten (W) film, tungsten carbide (WC) layer, a tungsten silicon nitride (WSiN) film, a tungsten boron carbon reduction (WBC) film, a tungsten boron carbon nitride (WBCN) film can also be applied to the tungsten aluminum carbide (WAlC) film or the like. Alternatively, a film in which these films are stacked may be used. For example, a stacked film in which a TiN film is formed on a TiAlC film or a stacked film in which a tungsten (W) film is formed on a TiAlC film may be used. Good.

<Preferred embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
Carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber;
Supplying a processing gas onto the substrate carried into the processing chamber;
Supplying microwaves to the substrate;
A method of manufacturing a semiconductor device having the above is provided.

(Appendix 2)
A method of manufacturing a semiconductor device according to appendix 1, preferably,
The high dielectric constant film is formed on the substrate via a silicon oxide film, and the metal-containing film is formed on the high dielectric constant film.

(Appendix 3)
A method of manufacturing a semiconductor device according to appendix 1 or 2, preferably,
The metal-containing film is a transition metal-containing film.

(Appendix 4)
A method of manufacturing a semiconductor device according to appendix 3, preferably,
The transition metal-containing film contains any one or more of aluminum, bromine, carbon, and nitrogen.

(Appendix 5)
A method for manufacturing a semiconductor device according to any one of appendices 1 to 3, preferably,
The metal-containing film is a titanium-containing film.

(Appendix 6)
A method of manufacturing a semiconductor device according to any one of appendices 1 to 5, preferably,
Before the step of supplying the microwave, there is a step of reducing the oxygen concentration in the processing chamber to a low oxygen concentration.

(Appendix 7)
A method for manufacturing a semiconductor device according to appendix 6, preferably,
The low oxygen concentration is 1 ppm or less.

(Appendix 8)
A method of manufacturing a semiconductor device according to appendixes 1 to 7, preferably,
In the step of supplying the microwave, the pressure in the processing chamber is controlled so that plasma is not generated in the processing chamber.

(Appendix 9)
A method of manufacturing a semiconductor device according to any one of appendices 1 to 8, preferably,
The frequency of the microwave is 1 GHz to 100 GHz.

(Appendix 10)
A method for manufacturing a semiconductor device according to any one of appendices 1 to 9, preferably,
In the step of supplying the microwave, the microwave and the atmosphere in the processing chamber are adjusted so that the high dielectric constant film is heated rather than the metal-containing film.

(Appendix 11)
According to another aspect,
A processing chamber into which a substrate on which a high dielectric constant film and a metal-containing film are formed is carried;
A gas supply unit for supplying a processing gas to the substrate;
A microwave supply unit for supplying microwaves to the substrate;
A control unit for controlling the gas supply unit and the microwave supply unit;
A substrate processing apparatus is provided.

(Appendix 12)
According to another aspect,
A procedure for carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber;
A procedure for supplying a processing gas onto the substrate carried into the processing chamber;
Supplying microwaves to the substrate;
A program for causing a computer to execute is provided.

(Appendix 13)
According to another aspect,
A procedure for carrying a high dielectric constant film and a substrate on which a metal-containing film is formed into a processing chamber;
A procedure for supplying a processing gas onto the substrate carried into the processing chamber;
Supplying microwaves to the substrate;
A recording medium storing a program for causing a computer to execute is provided.

DESCRIPTION OF SYMBOLS 10 ... Processing chamber 11 ... Wafer 13 ... Substrate support pin 18 ... Processing container 19 ... Microwave supply part 20 ... Microwave generation part 21 ... Waveguide 22 ... Waveguide port 50 ... Gas supply part 52 ... Gas supply pipe 53 ... Opening and closing Valve 54 ... Flow rate control device 55 ... Gas supply source 60 ... Gas discharge part 62 ... Gas discharge pipe 63 ... Pressure adjustment valve 64 ... Vacuum pump 71 ... Wafer transfer port 72 ... Gate valve 73 ... Gate valve drive part 80 ... Control part 100 ... Substrate processing equipment

Claims (5)

Carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber;
Supplying a processing gas onto the substrate carried into the processing chamber;
Supplying microwaves to the substrate;
A method for manufacturing a semiconductor device comprising:   The method of manufacturing a semiconductor device according to claim 1, wherein the high dielectric constant film is formed on the substrate via a silicon oxide film, and the metal-containing film is formed on the high dielectric constant film.   3. The method of manufacturing a semiconductor device according to claim 1, wherein in the step of supplying the microwave, the microwave and the atmosphere in the processing chamber are adjusted so that the high dielectric constant film is heated rather than the metal-containing film. . A processing chamber into which a substrate on which a high dielectric constant film and a metal-containing film are formed is carried;
A gas supply unit for supplying a processing gas to the substrate;
A microwave supply unit for supplying microwaves to the substrate;
A control unit for controlling the gas supply unit and the microwave supply unit;
A substrate processing apparatus. A procedure for carrying a substrate on which a high dielectric constant film and a metal-containing film are formed into a processing chamber;
A procedure for supplying a processing gas onto the substrate carried into the processing chamber;
Supplying microwaves to the substrate;
A program that causes a computer to execute.

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