JP2014144880A5 - - Google Patents

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Publication number
JP2014144880A5
JP2014144880A5 JP2013012793A JP2013012793A JP2014144880A5 JP 2014144880 A5 JP2014144880 A5 JP 2014144880A5 JP 2013012793 A JP2013012793 A JP 2013012793A JP 2013012793 A JP2013012793 A JP 2013012793A JP 2014144880 A5 JP2014144880 A5 JP 2014144880A5
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JP
Japan
Prior art keywords
single crystal
substrate
manufacturing apparatus
insulating material
heat insulating
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Application number
JP2013012793A
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English (en)
Japanese (ja)
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JP2014144880A (ja
JP5805115B2 (ja
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Priority to JP2013012793A priority Critical patent/JP5805115B2/ja
Priority claimed from JP2013012793A external-priority patent/JP5805115B2/ja
Publication of JP2014144880A publication Critical patent/JP2014144880A/ja
Publication of JP2014144880A5 publication Critical patent/JP2014144880A5/ja
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JP2013012793A 2013-01-28 2013-01-28 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法 Active JP5805115B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013012793A JP5805115B2 (ja) 2013-01-28 2013-01-28 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013012793A JP5805115B2 (ja) 2013-01-28 2013-01-28 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2014144880A JP2014144880A (ja) 2014-08-14
JP2014144880A5 true JP2014144880A5 (pt) 2014-11-27
JP5805115B2 JP5805115B2 (ja) 2015-11-04

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ID=51425456

Family Applications (1)

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JP2013012793A Active JP5805115B2 (ja) 2013-01-28 2013-01-28 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法

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JP (1) JP5805115B2 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015030167A1 (ja) * 2013-08-29 2015-03-05 株式会社ブリヂストン サセプタ
JP6393161B2 (ja) * 2014-11-21 2018-09-19 東京エレクトロン株式会社 成膜装置
WO2017043165A1 (ja) 2015-09-11 2017-03-16 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6671161B2 (ja) * 2015-11-30 2020-03-25 昭和電工株式会社 炭化珪素エピタキシャル成長用基板ホルダー及びエピタキシャル炭化珪素単結晶ウェハの製造方法
CN108242387B (zh) * 2016-12-23 2021-03-05 财团法人工业技术研究院 半导体基板结构
WO2023101613A2 (en) * 2021-12-03 2023-06-08 Agency For Science, Technology And Research Method of forming silicon carbide epitaxial wafer and silicon carbide substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3603216B2 (ja) * 1997-06-17 2004-12-22 株式会社日鉱マテリアルズ 薄膜成長装置
JP5169097B2 (ja) * 2007-09-14 2013-03-27 住友電気工業株式会社 半導体装置の製造装置および製造方法

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