JP2014141722A - CYLINDRICAL Cu-Ga ALLOY SPUTTERING TARGET AND PRODUCTION METHOD THEREOF - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a cylindrical Cu-Ga alloy sputtering target not having a crack and fracture, and not having dispersion of a relative density and a Ga concentration.SOLUTION: Cu-Ga alloy powder or a Cu-Ga alloy compact is filled so as to have a bulk density of 60% or higher into a cylindrical capsule 1 whose thickness is 1.0 mm or more and less than 3.5 mm, and subjected to hot hydrostatic pressing by using a hot hydrostatic press method, to thereby obtain a Cu-Ga alloy sintered body.

Description

  The present invention relates to a cylindrical Cu-Ga alloy sputtering target used for forming a light absorption layer of a CIGS (Cu-In-Ga-Se quaternary alloy) solar cell and a method for manufacturing the same.

  In recent years, solar power generation has attracted attention as one of clean energy, and crystalline Si solar cells are mainly used. However, CIGS (high conversion efficiency among thin film solar cells due to supply and cost problems) Cu-In-Ga-Se quaternary alloys) based solar cells have attracted attention and have been put to practical use.

  The CIGS solar cell has, as a basic structure, a Mo electrode layer to be a back electrode formed on a soda lime glass substrate and a Cu—In—Ga— to be a light absorption layer formed on the Mo electrode layer. A Se quaternary alloy film, a buffer layer made of ZnS, CdS, or the like formed on the light absorption layer made of the Cu—In—Ga—Se quaternary alloy film, and formed on the buffer layer. A transparent electrode.

  A vapor deposition method is known as a method for forming a light absorption layer made of a Cu—In—Ga—Se quaternary alloy film, but a method of forming by a sputtering method in order to obtain a uniform film in a wider area. Has been proposed.

  In the sputtering method, first, an In film is formed by sputtering using an In target, and a Cu-Ga alloy film is formed on the In film by sputtering using a Cu-Ga alloy sputtering target. This is a method of forming a Cu—In—Ga—Se quaternary alloy film by heat-treating the obtained laminated film composed of an In film and a Cu—Ga alloy film in a Se atmosphere.

  Since the quality of the Cu—In—Ga—Se quaternary alloy film formed by the sputtering method largely depends on the quality of the Cu—Ga alloy sputtering target, a high quality Cu—Ga alloy sputtering target is desired. .

  In the Cu—Ga alloy sputtering target, a flat plate (planar) sputtering target is mainly used. However, the flat sputtering target has a drawback that the use efficiency is about 30%. In particular, in the case of a Cu—Ga alloy sputtering target, a target excellent in use efficiency is required because Ga metal is a rare resource.

  Therefore, recently, a cylindrical (rotary) sputtering target has attracted attention. The cylindrical sputtering target has a magnet and cooling equipment arranged inside the target and performs sputtering while rotating. Since the entire surface becomes an erosion area, the usage efficiency is as high as 60% or more. . In recent years, attention has been paid to the fact that high power can be applied per unit area as compared with the flat plate type, so that high-speed film formation is possible.

  As a manufacturing method of a cylindrical sputtering target, for example, a manufacturing method by spinning processing has been proposed (for example, see Patent Document 1). However, since a Cu—Ga alloy having a composition for CIGS solar cell use is brittle and very easily cracked, it is not appropriate because cracks are easily generated when strong processing such as spinning processing is performed.

  Patent Document 2 proposes a method of manufacturing a cylindrical sputtering target by thermal spraying. The said manufacturing method is a manufacturing method which sprays a target raw material directly on a base material (it is also called a backing tube), and can manufacture a cylindrical sputtering target comparatively easily. However, the production method by thermal spraying has a drawback that abnormal discharge is liable to occur during sputtering because many gaps are formed in the sputtering target. Further, in the case of the thermal spraying method, in the process of depositing Cu—Ga alloy molten particles on the base material, Cu—Ga alloy molten particles that are not deposited on the base material are generated, and the yield is low compared to other manufacturing methods. There is.

  In Patent Document 3, a stainless steel columnar or cylindrical substrate is inserted into a mold (capsule), a target raw material is filled between the mold and the columnar substrate, and a hot isostatic press ( A manufacturing method has been proposed in which a target bonded to a base material is manufactured by HIP) processing, and then a cylindrical target is manufactured by subjecting a cylindrical base material to inner peripheral processing.

  In the case of a Cu—Ga alloy, the sintering temperature needs to be processed at a high temperature of about 500 to 1000 ° C., although it depends on the composition. The higher the temperature, the greater the thermal stress that accompanies the difference in thermal expansion between the substrate and the Cu—Ga alloy. Patent Document 3 does not describe the size of the columnar substrate or the cylindrical substrate, but the larger the substrate, the greater the thermal stress associated with the difference in thermal expansion. In particular, a brittle Cu—Ga alloy is not appropriate because it is cracked even by a slight thermal stress.

  In addition, after the hot isostatic pressing (HIP) treatment, the target and the base material are in a joined state, but there is usually no standard for the shape of the cylindrical base material, and there are various sizes and shapes depending on the sputtering apparatus. Variety. In the manufacturing method described in Patent Document 3, since the target and the base material are bonded, it is difficult to manufacture depending on the size and shape of the base material, which is not general-purpose.

  Furthermore, in recent years, the cylindrical sputtering target has been lengthened, and a target having a large size of 3000 mm or more is also desired. However, the method of Patent Document 3 cannot divide the target, so that it is integrated. It will be limited. In addition, in the manufacturing method of Patent Document 3, if a target of 3000 mm or more is to be manufactured, it becomes difficult to fill the target material at the time of HIP processing, so the density of the sintered body is reduced due to insufficient filling and density variation occurs. To do. Such a sputtering target including insufficient sintering density and variation in density has a drawback that abnormal discharge is likely to occur during sputtering.

  Further, in Patent Document 4, a cylindrical base material is formed by spraying an undercoat by thermal spraying for the purpose of alleviating thermal stress associated with the adhesion to the target and the difference in thermal expansion applied to the target, and performing a HIP treatment. A manufacturing method for producing a target having a shape is proposed.

  However, the undercoat formed by thermal spraying contains voids due to entrainment of gas during thermal spraying. Therefore, the formed undercoat has a low density and contains a large amount of gas components. When the HIP treatment is performed using the base material on which such an undercoat is formed, the density of the obtained sintered body is not increased due to the influence of the gas component contained in the undercoat, and in the sintered body, A lot of gas components are contained. Therefore, the sputtering target obtained by the manufacturing method of Patent Document 4 has a drawback that abnormal discharge is likely to occur during sputtering.

  On the other hand, even in the case of a Cu—Ga alloy, development of a flat plate sputtering target is progressing. For example, Patent Document 5 proposes a method of obtaining a flat plate sputtering target by pressure sintering.

  For example, when trying to produce a cylindrical sputtering target using this manufacturing method, if a hot press is used for pressure sintering, a carbon pressure vessel is required, and complicated parts are required as a cylindrical pressure vessel. There are inconveniences that require many points. In addition, even if hot pressing is performed, the density may vary if pressure is not applied evenly. However, unlike the flat plate shape, the cylindrical shape is not easy to apply uniformly, so the density of the resulting sintered body also decreases. The problem arises. In Patent Document 5, a flat plate sputtering target by HIP treatment is also described, but it is not described how to obtain a cylindrical sputtering target.

  Patent Document 6 proposes a method of manufacturing by a melting / casting method in a Cu—Ga alloy flat plate sputtering target. However, in general, segregation occurs in the solidification process after casting in an alloy system, resulting in variations in Ga concentration. Therefore, even if a cylindrical sputtering target is obtained by finishing the ingot into a cylindrical shape by machining, the composition of the obtained film varies when the sputtering target is used. The problem arises that the is not constant.

  In each of the above-described manufacturing methods of the cylindrical sputtering target, it is effective if the material is rich in general workability, but a Cu—Ga alloy used for a CIGS solar cell forms a fragile compound. It is difficult to produce by the manufacturing method described in the patent document.

  Moreover, even if a cylindrical sputtering target is manufactured using the manufacturing method of a flat-plate-type Cu-Ga alloy sputtering target, the problem that malfunctions, such as a crack accompanying a stress load, generate | occur | produces arises.

JP 2007-302981 A JP-A-5-171428 Japanese Patent Laid-Open No. 5-039566 JP-A-7-026374 JP 2012-031508 A JP 2000-073163 A

  In view of the situation as described above, the present invention provides a high-quality cylindrical Cu—Ga alloy sputtering target having a small relative density variation and a high density and a small Ga concentration variation without causing defects such as cracks. It aims at providing the manufacturing method of the cylindrical Cu-Ga alloy sputtering target to manufacture, and the cylindrical Cu-Ga alloy sputtering target obtained by the manufacturing method.

  The cylindrical Cu-Ga alloy sputtering target according to the present invention that achieves the above-described object is such that the amount of Ga is 20 to 40% by mass of Ga by weight ratio, the balance is Cu and inevitable impurities, and the relative density is 99% or more, The relative density variation is within 1.0%, and the Ga concentration variation is within 1.0 mass%.

  The manufacturing method of the cylindrical Cu-Ga alloy sputtering target according to the present invention that achieves the above-mentioned object uses a hot isostatic pressing method, the amount of Ga is 20 to 40% by mass, the balance is Cu and unavoidable. This is a method for producing a cylindrical Cu-Ga alloy sputtering target made of mechanical impurities, in which a cylindrical capsule having a thickness of 1.0 mm or more and less than 3.5 mm is filled with Cu-Ga alloy powder or a Cu-Ga alloy compact. It is filled with a density of 60% or more and hot isostatically pressed to obtain a Cu—Ga alloy sintered body.

  In the present invention, it is possible to manufacture a high-quality cylindrical Cu—Ga alloy sputtering target with a small relative density variation and a high density and a small Ga concentration variation without generating cracks or cracks in the manufacturing process. .

It is a perspective view of the capsule used at the HIP process of the manufacturing method of the Cu-Ga alloy sputtering target concerning the present invention. It is sectional drawing of the capsule. It is a top view of the capsule.

Hereinafter, embodiments of the present invention (hereinafter referred to as “present embodiments”) will be described in detail in the following order with reference to the drawings.
1. 1. Cu—Ga alloy sputtering target 2. Manufacturing method of Cu-Ga alloy sputtering target 2-1. Powder production process 2-2. Molding process 2-3. HIP process 2-4. Machining process

[1. Cu-Ga alloy sputtering target]
A cylindrical Cu—Ga alloy sputtering target (hereinafter also simply referred to as a target) has an amount of Ga of 20 to 40% by mass and the remainder is made of Cu and inevitable impurities.

  Cu—Ga alloy forms a fragile compound as the amount of Ga increases, so when the amount of Ga is more than 40% by mass, it breaks due to the stress received during the hot isostatic pressing (HIP) treatment described below, This is not preferable because a target cannot be obtained.

  On the other hand, when the amount of Ga is less than 20% by mass, when the light absorption layer of the solar cell is formed using the produced target, the desired battery characteristics cannot be obtained, which is not preferable.

  The cylindrical Cu—Ga alloy sputtering target has a relative density of 99% or more. Here, the relative density means a percentage of a value obtained by dividing the density measured by the Archimedes method by the true density of the substance.

  When the relative density of the target is lower than 99%, problems such as abnormal discharge at the time of sputtering occur due to the influence of gas components existing in the gap of the target. Therefore, the relative density of the cylindrical Cu—Ga alloy sputtering target is 99% or more.

  The cylindrical Cu—Ga alloy sputtering target has a relative density variation of 1.0% or less. Here, the variation in the relative density is defined as a value obtained by subtracting the maximum value and the minimum value of the relative density in each part of the target. In the measurement of the density of each part, first, a plurality of points are arbitrarily determined on one surface in the longitudinal direction of the target (for example, the bottom surface of a cylinder). Then, the density of the target at the same position as the positions of a plurality of arbitrarily determined points is measured at both end portions in the length direction of the target and an intermediate portion located at half of the total length. And the relative density of each part is calculated | required from the obtained density. Arbitrary plural points are determined so that the portions for measuring the density are dispersed. For example, a straight line is drawn on one surface in the longitudinal direction of the target, and a total of four points including two points on the straight line and two points on a line drawn perpendicularly to the line are defined as a plurality of arbitrary points. Note that the number of points on the straight line is not limited to two, and may be two or more.

  The cylindrical Cu—Ga alloy sputtering target has a density variation within 1.0%. If the relative density varies, the sputter rate is different at each part, so that the sputtered film thickness varies depending on the part. In particular, in a solar cell target, the variation in film thickness causes variation in characteristics, and therefore, the variation in relative density needs to be within 1.0%.

  In addition, the cylindrical Cu—Ga alloy sputtering target has a Ga concentration variation within 1.0 mass% in the composition of each part. Here, the variation in density defines a value obtained by subtracting the maximum value and the minimum value of the density at each part. Each part is determined in the same manner as the above-described variation in relative density.

  When the Ga concentration varies in the target, a Ga-rich brittle compound is formed depending on the site, and thus a problem that is lost when machining the cylindrical sputtering target occurs. In addition, when sputtering is performed using a cylindrical sputtering target having a variation in Ga concentration, the Ga concentration also varies in the formed film, which affects the solar cell characteristics, so the variation in Ga concentration is 1.0 mass. %.

  Since the cylindrical Cu—Ga alloy sputtering target as described above has a high density and a small variation in density, there is no problem such as abnormal discharge during sputtering. In addition, since the variation in Ga concentration is small in the cylindrical Cu—Ga alloy sputtering target, the variation in Ga concentration can be reduced even in a film formed by sputtering, and the occurrence of defects in the film can be suppressed. Therefore, for example, when a light absorption layer of a solar cell is formed using the above-described target, a light absorption layer having a predetermined Ga concentration can be formed without variation in Ga concentration. Therefore, with the cylindrical Cu—Ga alloy sputtering target, sputtering can be stably performed, and a high-quality sputtered film can be formed.

[2. Manufacturing method of Cu-Ga alloy sputtering target]
The above-described cylindrical Cu—Ga alloy sputtering target can be manufactured as follows.

  In the method of manufacturing a cylindrical Cu-Ga alloy sputtering target, a Cu-Ga alloy powder adjusted to a predetermined composition or a Cu-Ga alloy molded body obtained by molding a Cu-Ga alloy powder is used as a raw material, and the thickness is controlled. A die for an isostatic pressing (HIP) method (hereinafter also simply referred to as a capsule) is used. And the manufacturing method of a cylindrical Cu-Ga alloy sputtering target controls a filling density and a clearance with a capsule, fills a capsule with a raw material, and performs a HIP process. Thereby, in this manufacturing method, a sintered body without cracks is obtained, the sintered body is machined, and a high-quality cylindrical Cu-Ga alloy sputtering target with high density and no variation in relative density and Ga concentration is obtained. Can be manufactured.

  Specifically, the manufacturing method of a cylindrical Cu-Ga alloy sputtering target has a powder manufacturing process, a shaping | molding process, a HIP process, and a machining process.

<2-1. Powder manufacturing process>
In the powder manufacturing process, Cu—Ga alloy powder is produced. The manufacturing method of Cu-Ga alloy powder is not specifically limited, For example, the grinding | pulverization method or the atomizing method can be used.

  In the pulverization method, Cu raw material and Ga raw material are melted in a melting furnace or the like and then cast. The obtained Cu—Ga alloy ingot is pulverized by a stamp mill, a disk mill or the like, whereby a lump powder can be obtained.

  In the atomizing method, the Cu raw material and the Ga raw material are dissolved and then atomized. Since the HIP process is performed in a subsequent process, a spherical gas atomized powder having a high tap density is preferable.

  The particle size of the Cu—Ga alloy powder used in the hot isostatic pressing method is not particularly limited, but the more the Cu—Ga alloy powder is filled in the capsule, the lower the shrinkage rate when pressure is applied when performing HIP treatment. Therefore, a higher tap density is preferable. Therefore, it is preferable that the particle size distribution of the Cu—Ga alloy powder is wide and that there are few fine powders of 1 μm or less, and there are few coarse powders of 200 μm or more.

<2-2. Molding process>
In the forming step, Cu—Ga alloy powder is formed before the next HIP step. In the HIP process to be described later, the higher the packing density of the Cu—Ga alloy filled in the capsule, the lower the shrinkage rate at the time of pressure load, so that the generation of cracks is suppressed and the yield is improved. For this reason, it is preferable to form the Cu—Ga alloy powder before the HIP treatment. However, if the Cu-Ga alloy powder to be used has a high tap density and can be sufficiently filled in the capsule, it is not necessary to mold the capsule.

  As a forming method of the Cu—Ga alloy powder, a cold isostatic press (CIP) method or a mold press may be used. Unlike the mold press, the molding by CIP has no friction with the metal and isotropically loaded with pressure, so that the density becomes uniform. In addition, the mold press is expensive because the mold is expensive, but CIP is economical because it uses an inexpensive rubber mold, and therefore molding by CIP is preferable.

  When molding into a cylindrical shape by CIP, the rubber mold to be used is a cylindrical outer frame, an inner cylinder that becomes a hollow portion of the target at the center of the outer frame, an upper lid that closes the upper and lower openings of the outer frame, and a lower And a lid. At the time of cold isostatic pressing, pressure is applied in the same direction, but in order to give a sufficient density to the molded body, the deformation resistance of the rubber mold is preferably small. Therefore, the upper and lower lids and the outer frame are preferably soft rubber. On the other hand, the inner cylinder is preferably a hard rubber because it is necessary to maintain the inner diameter, and may be a metal inner cylinder instead of rubber.

  In the molding step, a rubber mold is filled with Cu—Ga alloy powder and pressed in the same direction to obtain a molded body. The conditions for the CIP treatment are not particularly limited, but in order to obtain a sufficient consolidation effect, it is preferably 100 MPa or more, and more preferably 200 to 350 MPa.

  Since the Cu-Ga alloy molded body after the CIP treatment is deformed by the pressure applied during the CIP treatment, the deformed Cu-Ga alloy molded body is subjected to machining or the like, and a cylindrical Cu-Ga alloy without deformation You may finish in a molded object. The Cu—Ga alloy molded body is processed to have an outer diameter of 50 to 500 mm, for example.

<2-3. HIP process>
In the HIP process, the Cu—Ga alloy powder obtained in the powder production process or the Cu—Ga alloy compact obtained in the compact process is sintered by a hot isostatic pressing (HIP) method.

  As a method for heating and pressurizing, for example, a manufacturing method using a hot press is conceivable. However, in the manufacturing method using a hot press, since the pressing direction is uniaxial, variation in relative density of the obtained sintered body becomes large. . In addition, a graphite mold is required to obtain a sintered body by hot pressing, but it is not preferable because a graphite-type component becomes complicated to obtain a cylindrical sintered body.

  On the other hand, in the HIP method, since it is a rubber mold, it can be easily produced even in a cylindrical shape, and since pressure can be applied in the same direction, the density of the obtained sintered body varies. In general, a high-density sintered body of approximately 95% or more can be obtained, although the density depends on the material.

  In order to perform HIP processing, it is necessary to fill a mold (capsule) such as a mold with Cu-Ga alloy powder or a Cu-Ga alloy molded body. The material of the capsule is not particularly limited, and for example, iron or stainless steel is used. Using a high-strength material such as Mo or W takes time and labor to produce capsules, and also resists stress applied to the workpiece when pressure is applied by HIP treatment, resulting in a decrease in the density of the resulting sintered body. This is not preferable.

  As a capsule used for obtaining a cylindrical sintered body, for example, a capsule 1 having a bottom as shown in FIG. 1 is used. The method for producing the capsule 1 is not particularly limited. For example, the cylindrical outer frame 2, the cylindrical inner cylinder 3 serving as a hollow portion of the target disposed in the center of the outer frame 2, and the lower side of the outer frame 2 It is obtained by welding with the lower lid 4 that closes the opening.

  The thickness of the capsule 1 needs to be 1.0 mm or more and less than 3.5 mm. When the thickness is less than 1.0 mm, it becomes difficult to weld each capsule component. Therefore, in some cases, the welding is poor, the capsule is broken at the poorly welded portion during the HIP process, and the HIP is put in the capsule 1 which is decompressed. Gas that is a pressure medium for the treatment is mixed. When gas is mixed in the capsule 1, the internal pressure increases, the differential pressure from the external pressure is reduced, and the pressure applied to the object to be processed is insufficient, so that the density of the sintered body is insufficient.

  On the other hand, when the thickness of the capsule 1 is 3.5 mm or more, the risk of the capsule 1 being broken during the HIP process is reduced, but the influence of the difference in thermal expansion between the workpiece and the capsule 1 during the HIP process is reduced. Therefore, cracks or cracks occur due to thermal stress. From these things, the thickness of the capsule 1 needs to be 1.0 mm or more and less than 3.5 mm.

  In the HIP process, Cu—Ga alloy powder or a Cu—Ga alloy molded body is filled between the outer frame 2 and the middle cylinder 4 of the capsule 1, and the opening of the outer frame 2 is sealed with the upper lid 5. Is degassed and HIP treatment is performed.

  When the capsule 1 is filled with Cu—Ga alloy powder or Cu—Ga alloy compact, the filling density is set to 60% or more.

  Here, the filling density refers to a percentage of a value obtained by dividing the weight of the Cu—Ga alloy powder or Cu—Ga alloy molded body filled in the capsule 1 by the volume of the capsule 1 and dividing by the true density of the substance. . When the packing density is lower than 60%, the capsule 1 is greatly deformed when the HIP treatment is performed, and the stress applied to the object to be processed increases due to excessive deformation, but the Cu—Ga alloy is brittle, so the capsule 1 Cracks or cracks occur without being able to withstand the stress. In addition, the deformation amount of the capsule 1 reaches the limit, the capsule 1 is torn and the pressure applied to the object to be processed is insufficient, resulting in insufficient density.

  On the other hand, if the filling density is 60% or more, the occurrence of defects such as cracks and insufficient density is eliminated, and the relative density of the Cu-Ga alloy after the HIP treatment is preferably high. Since a high-density thing is obtained, it is preferable. Further, the higher the packing density, the lower the shrinkage rate during HIP, so that a sintered body closer to the product shape can be obtained. Therefore, the packing density is 60% or more.

  The method of filling the capsule 1 with the Cu—Ga alloy powder is not particularly limited, and the capsule 1 may be filled in small portions and tapped. For example, a vibrating plate is placed under the capsule 1 and filled while applying vibration. Moreover, you may fill, adding a press.

  When the capsule 1 is filled with Cu—Ga alloy powder or a Cu—Ga alloy molded body, the gap (clearance) between the capsule 1 and the object to be processed is preferably 1 mm or less. When filling using only Cu-Ga alloy powder, the apparent clearance is 0 mm. On the other hand, when using a Cu-Ga alloy compact, the clearance between the Cu-Ga alloy powder and the capsule 1 is filled with a Cu-Ga alloy powder having the same composition as the Cu-Ga alloy compact to adjust the clearance. Or the foil of the same material as the capsule 1 is filled.

  When the HIP process is performed in a state where the clearance between the capsule 1 and the object to be processed is larger than 1.0 mm, the capsule 1 is deformed, but generally the deformation is most deformed at the central portion. When the clearance is larger than 1.0 mm, the most deformed portion of the capsule 1 and the object to be processed are in partial contact, and at that time, cracks or cracks are generated due to stress concentration, or the relative density of the Cu-Ga alloy sintered body Will fall. Therefore, the clearance between the capsule 1 and the object to be processed is preferably 1.0 mm or less.

  After the capsule 1 is filled with the Cu—Ga alloy powder or the Cu—Ga alloy compact, the upper lid 5 is sealed in the opening of the outer frame 2 by welding as shown in FIGS. The method of welding the upper lid 5 is not particularly limited, and for example, TIG welding (TIG (Tungsten Inert Gas) welding) or electron beam welding (EB (electron beam welding) welding) may be used. However, particularly when the capsule 1 is thin, EB welding is preferable because the welding accuracy is good and the heat influence on the capsule 1 is small.

After the capsule 1 is sealed, the inside of the capsule 1 is deaerated. In the deaeration, the pressure is reduced to 1 × 10 ¹ Pa or less through the deaeration pipe 6 shown in FIGS. 2 and 3, and then the deaeration pipe 6 is pressure-bonded and welded to be sealed.

  Deaeration is preferably performed by heating at 150 ° C. or higher. When HIP treatment is performed in the presence of a small amount of gas component adhering to the capsule 1 and the object to be processed, the gas component remains in the sintered body and causes voids and lowers the target density. Become. Therefore, it is preferable to heat at the time of deaeration before HIP, and a high-density and high-purity sintered body can be obtained by heating at 150 ° C. or higher.

  And the HIP process is performed with respect to the capsule 1 filled with the Cu—Ga alloy or the Cu—Ga alloy molded body in this way. The conditions for the HIP treatment are not particularly limited, but it is preferable that the temperature is 500 to 900 ° C., the pressure is 50 to 200 MPa, and the treatment time is 2 hours or longer.

  If the temperature is less than 500 ° C., the progress of the sintering becomes slow, so that it becomes difficult to obtain a high-density sintered body. On the other hand, a temperature higher than 900 ° C. is not preferable because a liquid phase due to Ga starts to appear and alloyed with the capsule 1 to cause a significant defect.

  The pressure is preferably 50 MPa or more in order to obtain a high-density sintered body. Regarding the upper limit of the pressure, the maximum pressure of a general apparatus is 200 MPa, and if it exceeds that, a special HIP apparatus will be used, and the cost increases.

  As described above, in the HIP process, Cu—Ga alloy powder or Cu—Ga is preferably used in the cylindrical capsule 1 having a thickness of 1.0 mm or more and less than 3.5 mm so that the clearance is preferably 1.0 mm or less. After filling the alloy molded body and sealing the capsule 1, the inside of the capsule 1 is deaerated and, for example, the temperature is set within a range of 500 to 900 ° C. and the pressure is set within a range of 50 to 200 MPa, and HIP treatment is performed for 2 hours or more. In this HIP process, a high-density Cu—Ga alloy sintered body can be formed without generating cracks and the like.

<2-4. Machining process>
In the machining process, the capsule 1 attached to the obtained Cu—Ga alloy sintered body is removed. For example, the capsule 1 is removed with a lathe. In the machining process, the sintered body from which the capsule 1 is removed is finished. The processing method differs depending on the composition, and in the case of a Cu—Ga alloy having a Ga content of less than 30% by mass, it can be finished by processing as it is with a lathe. On the other hand, in the case of a Cu—Ga alloy having a Ga content of 30% by mass or more, since it is fragile, there is a risk of cracking when processed with a lathe.

  As described above in detail, in the manufacturing method of the cylindrical Cu—Ga alloy sputtering target, the thickness is 1.0 mm or more in order to suppress the stress applied to the Cu—Ga alloy when manufacturing using the HIP method. A capsule of less than 3.5 mm is filled with Cu-Ga alloy powder or a Cu-Ga alloy molded body so that the filling density is 60% or more, and subjected to HIP treatment. Thereby, in this manufacturing method, it is possible to manufacture a cylindrical Cu—Ga alloy sputtering target that is free from cracks, has a high density, a small variation in relative density, and a small variation in Ga concentration.

  Furthermore, in the manufacturing method of the above-described cylindrical Cu—Ga alloy sputtering target, the Cu—Ga alloy powder is so formed that the clearance between the capsule 1 and the Cu—Ga alloy powder or the Cu—Ga alloy compact is 1.0 mm or less. Alternatively, by filling the Cu—Ga alloy molded body, generation of cracks due to deformation of the capsule 1 can be more effectively prevented.

  In addition, the target obtained by this cylindrical Cu—Ga alloy sputtering target manufacturing method is free from cracks and cracks, and has high density and small variations in relative density and Ga concentration. It is possible to prevent problems such as variation in composition. Thereby, stable solar cell characteristics can be obtained by using this target.

  Hereinafter, the cylindrical Cu—Ga alloy sputtering target and the method for producing the same according to the present invention will be described in comparison with comparative examples. In addition, this invention is not limited by this Example.

Example 1
In Example 1, the powder manufacturing process was first performed. In the powder production process, in order to produce a cylindrical Cu-Ga alloy sputtering target, 25% by mass of Ga as a starting material is blended and melted and cast so that the balance is Cu, thereby forming a Cu-Ga alloy ingot. Obtained. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, a molding process was performed. In the forming step, in order to form the produced Cu—Ga alloy powder by CIP, a Cu—Ga alloy powder was filled in a rubber mold and processed at a pressure of 250 MPa to obtain a Cu—Ga alloy formed body.

  Next, the HIP process was performed. In the HIP process, first, in order to sinter the Cu-Ga alloy compact by hot isostatic pressing (HIP), the upper and lower lids, outer frame and hollow inner cylinder are machined from a 3.2 mm thick steel plate. The bottom lid, outer frame, and inner cylinder were electron beam (EB) welded to obtain a capsule with a bottomed outer diameter φ180 mm, inner diameter φ130 mm, and length 300 mmL (see FIG. 1).

Next, when the Cu-Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule and further added while tapping the Cu-Ga alloy powder, the filling density was 8.6 g / specific gravity of the Cu-Ga alloy. It was 65.2% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating, and crimping and welding the upper lid.

  Subsequently, the capsule was subjected to HIP treatment, and as a condition thereof, a Cu—Ga alloy sintered body was obtained by performing treatment at a temperature of 650 ° C. and a pressure of 100 MPa for a treatment time of 3 hours.

  Here, in order to confirm the occurrence of cracks and cracks due to the HIP treatment, a radiation transmission inspection was performed, but no cracks or cracks were found.

  And after removing the capsule adhering to a Cu-Ga alloy sintered compact by lathe processing, the outer diameter and inner diameter of Cu-Ga alloy were processed with the lathe, and it finished in arbitrary dimensions. Thereafter, a penetrant inspection was performed to confirm cracks on the surface, but no cracks or cracks were found.

  Next, in order to confirm the relative density of the obtained cylindrical Cu-Ga alloy sintered body and the variation of the relative density, two points from the line drawn arbitrarily with respect to the bottom area of the cylinder, and on the line Two points were selected from the vertically drawn line, and a total of four points were sampled at the upper part, the lower part in the length direction, and the middle part of the distance of half the total length, and a total of 12 points were sampled. Moreover, each sample was processed into a 10 mm square, and the density was measured by the Archimedes method.

The relative density was calculated by dividing the obtained value by the true density of 8.6 g / cm ³ and dividing the divided value as a percentage. As a result, the average value of the relative density was 99.8%. The maximum value of the relative density was 100%, the minimum value was 99.6%, and the variation obtained by subtracting the minimum value from the maximum value was 0.4%.

  Next, in order to confirm the variation in composition of the obtained Cu—Ga alloy sintered body, the sample used for evaluating the variation in relative density was analyzed by ICP (Inductively Coupled Plasma) emission spectroscopic analysis. Concentration analysis was performed. As a result, the average value of the Ga concentration in each part was 25.2% by mass. Moreover, the maximum value of Ga concentration was 25.3 mass%, the minimum value was 25.1 mass%, and the variation obtained by subtracting the minimum value from the maximum value was 0.2 mass%.

(Example 2)
In Example 2, in the powder manufacturing process, Ga as a starting material was mixed and dissolved so that 25% by mass and the balance was Cu, and was prepared by gas atomization and classified to obtain a Cu-Ga alloy powder. . The average particle diameter of the Cu—Ga alloy powder after classification was 45 μm and the tap density was 6.2 g / cm ³ .

Next, in the HIP process, when the Cu—Ga alloy powder was filled between the inner cylinder and the outer frame of the capsule produced in the same manner as in Example 1, the filling density was 8. It was 71.8% with respect to 6 g / cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating, and crimping and welding the upper lid (see FIG. 2).

  Next, HIP treatment was performed in the same manner as in Example 1 to obtain a Cu—Ga alloy sintered body. And in order to confirm the presence or absence of the crack by the HIP process, and the generation | occurrence | production of a crack, the radiation transmission test was performed, but the crack and the crack were not seen.

  Subsequently, after removing the capsule from the Cu—Ga alloy sintered body in the same manner as in Example 1, it was processed and finished to an arbitrary size. Thereafter, a penetration inspection was conducted to confirm cracks on the surface, but no cracks were found.

Next, in order to confirm the relative density of the obtained cylindrical Cu-Ga alloy sintered body and the variation in the relative density, sampling was performed at the same location as in Example 1, and each sample was processed into a 10 mm square. When density measurement was performed by the Archimedes method, the average value of the relative density was 99.9% with respect to the true density of 8.6 g / m ³ . Moreover, the variation in relative density was 0.2%. Further, when the Ga concentration of each part was analyzed, the average value of Ga concentration was 25.1% by mass, and the variation in Ga concentration was 0.1% by mass.

(Example 3)
In Example 3, a Cu—Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in an amount of 25 mass% and the balance being Cu in the powder production process. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, in the molding step, a Cu—Ga alloy molded body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 1.0 mm.

Subsequently, the Cu—Ga alloy compact was filled between the inner cylinder and the outer frame of the capsule, and further filled with the Cu—Ga alloy powder being tapped. The filling density was 8.6 g / specific gravity of the Cu—Ga alloy. It was 65.2% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, HIP treatment was performed in the same manner as in Example 1 to obtain a Cu—Ga alloy sintered body. And in order to confirm the presence or absence of the crack by the HIP process, and the generation | occurrence | production of a crack, the radiation transmission test was performed, but the crack and the crack were not seen.

  Subsequently, after removing the capsule from the Cu—Ga alloy sintered body in the same manner as in Example 1, it was processed and finished to an arbitrary size. Thereafter, a penetration inspection was conducted to confirm cracks on the surface, but no cracks were found.

Next, in order to confirm the relative density of the obtained cylindrical Cu-Ga alloy sintered body and the variation in the relative density, sampling was performed at the same location as in Example 1, and each sample was processed into a 10 mm square. When density measurement was performed by the Archimedes method, the average value of the relative density was 99.8% with respect to the true density of 8.6 g / m ³ . The variation in relative density was 0.1%. Furthermore, when the Ga concentration of each part was analyzed, the average value of the Ga concentration was 25.1% by mass, and the variation of the Ga concentration was 0.2% by mass.

In Example 4, a Cu—Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so that 25 mass% and the balance were Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, in the molding step, a Cu—Ga alloy molded body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 3.2 mm.

Next, when the Cu—Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule, the filling density was 65.0% with respect to the specific gravity of 8.6 g / cm ³ of the Cu—Ga alloy. Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating, and crimping and welding the upper lid.

  Next, HIP treatment was performed in the same manner as in Example 1 to obtain a Cu—Ga alloy sintered body. And in order to confirm the presence or absence of the crack by the HIP process, and the generation | occurrence | production of a crack, the radiation transmission test was performed, but the crack and the crack were not seen.

  Subsequently, after removing the capsule from the Cu—Ga alloy sintered body in the same manner as in Example 1, it was processed and finished to an arbitrary size. Thereafter, a penetration inspection was conducted to confirm cracks on the surface, but no cracks were found.

Next, in order to confirm the relative density of the obtained cylindrical Cu-Ga alloy sintered body and the variation in the relative density, sampling was performed at the same location as in Example 1, and each sample was processed into a 10 mm square. When the density was measured by the Archimedes method, the average value of the relative density was 99.1% with respect to the true density of 8.6 g / m ³ . Moreover, the variation in relative density was 0.2%. Furthermore, when the Ga concentration of each part was analyzed, the average value of the Ga concentration was 25.2% by mass, and the variation in the Ga concentration was 0.1% by mass.

(Example 5)
In Example 5, a Cu—Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so that 35% by mass and the balance were Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle diameter of the classified Cu—Ga alloy powder was 72 μm, and the tap density was 5.2 g / cm ³ .

  Next, in the molding step, a Cu—Ga alloy molded body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 3.2 mm.

Subsequently, the Cu—Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule, and further added while tapping the Cu—Ga alloy powder, the filling density was 8.4 g / specific gravity of the Cu—Ga alloy. It was 68.6% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, the capsule is subjected to HIP processing. A Cu—Ga alloy sintered body was obtained by performing a treatment for 3 hours at a temperature of 600 ° C. and a pressure of 90 MPa.

  Here, in order to confirm the occurrence of cracks and cracks due to the HIP treatment, a radiation transmission inspection was performed, but no cracks or cracks were found.

  Subsequently, the capsule was removed from the sintered body of the Cu—Ga alloy in the same manner as in Example 1, and processed to finish to an arbitrary size. Thereafter, a penetration inspection was conducted to confirm cracks on the surface, but no cracks were found.

Next, in order to confirm the density of the obtained cylindrical Cu—Ga alloy sintered body and the variation in density, sampling was performed at the same place as in Example 1, and each sample was processed into a 10 mm square to obtain Archimedes method. When the density measurement was performed, the average value of the relative density was 99.6% with respect to the true density of 8.4 g / m ³ . Moreover, the variation in relative density was 0.2%. Furthermore, when the Ga concentration of each part was analyzed, the average value of the Ga concentration was 35.0% by mass, and the variation in the Ga concentration was 0.1% by mass.

(Comparative Example 1)
In Comparative Example 1, a Cu—Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so as to be 42% by mass and the balance being Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle diameter of the Cu—Ga alloy powder after classification was 69 μm and the tap density was 5.3 g / cm ³ .

  Next, in the forming step, a Cu—Ga alloy formed body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 3.2 mm.

Subsequently, the Cu—Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule, and further added while tapping the Cu—Ga alloy powder, the filling density was 8.4 g / specific gravity of the Cu—Ga alloy. It was 69.8% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, the capsule is subjected to HIP processing. A Cu—Ga alloy sintered body was obtained by performing a treatment for 3 hours at a temperature of 400 ° C. and a pressure of 80 MPa.

  Here, in order to confirm the presence or absence of cracks and cracks generated by the HIP process, cracks were detected when a radiation transmission inspection was performed.

  Then, after removing the capsule adhering to the sintered body of the Cu-Ga alloy by lathe processing, it was processed by a cylindrical grinder, but was stopped because the crack progressed and the crack occurred.

(Comparative Example 2)
In Comparative Example 2, a Cu-Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so that 25% by mass and the balance were Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 3.2 mm.

Subsequently, when the Cu—Ga alloy powder was filled between the inner cylinder and the outer frame of the capsule while tapping, the filling density was 58.1% with respect to the specific gravity of Cu—Ga alloy of 8.6 g / cm ³ . It was. Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, the capsule is subjected to HIP processing. A Cu—Ga alloy sintered body was obtained by performing a treatment for 3 hours at a temperature of 650 ° C. and a pressure of 100 MPa.

  Here, in order to confirm the presence or absence of cracks and cracks caused by the HIP process, a fine crack was detected when a radiation transmission inspection was performed.

  Subsequently, after removing the capsule adhering to the sintered body of the Cu—Ga alloy by lathe processing, it was processed by a lathe. However, cracks developed in part and chipping occurred. Moreover, when a penetration inspection was conducted to confirm cracks on the surface, cracks were detected in several places.

Even in the obtained sintered body of Cu—Ga alloy, the normal part was extracted and sampled at the same places as in Example 1 in order to confirm the density and density variation, and each sample was processed into a 10 mm square. When the density was measured by the Archimedes method, the average value of the relative density was 96.2% with respect to the true density of 8.6 g / m ³ . Moreover, the variation in relative density was 1.2%. Furthermore, when the Ga concentration of each part was analyzed, the average value of the Ga concentration was 25.2% by mass, and the variation in the Ga concentration was 0.1% by mass.

(Comparative Example 3)
In Comparative Example 3, a Cu—Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so that 25% by mass and the balance were Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, in the forming step, a Cu—Ga alloy formed body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced in the same manner as in Example 1 using a steel plate having a thickness of 3.8 mm.

Subsequently, the Cu—Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule, and further added while tapping the Cu—Ga alloy powder, the filling density was 8.6 g / specific gravity of the Cu—Ga alloy. It was 65.2% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, the capsule is subjected to HIP processing. A Cu—Ga alloy sintered body was obtained by performing a treatment for 3 hours at a temperature of 650 ° C. and a pressure of 100 MPa.

  Here, in order to confirm the presence or absence of cracks and cracks generated by the HIP process, cracks were detected when a radiation transmission inspection was performed.

  Next, after removing the capsule adhering to the sintered body of the Cu—Ga alloy by a lathe process, the lathe was processed by a lathe.

(Comparative Example 4)
In Comparative Example 4, a Cu-Ga alloy ingot was obtained by blending and melting and casting Ga as a starting material in a powder production process so that 25% by mass and the balance were Cu. Thereafter, the ingot was pulverized by a disk mill and classified to obtain a Cu—Ga alloy powder. The average particle size of the classified Cu—Ga alloy powder was 90 μm and the tap density was 5.0 g / cm ³ .

  Next, in the forming step, a Cu—Ga alloy formed body was obtained in the same manner as in Example 1.

  Next, in the HIP process, capsules were produced using a steel plate having a thickness of 0.5 mm.

Subsequently, the Cu—Ga alloy molded body was filled between the inner cylinder and the outer frame of the capsule, and further added while tapping the Cu—Ga alloy powder, the filling density was 8.6 g / specific gravity of the Cu—Ga alloy. It was 65.2% with respect to cm ³ . Thereafter, the capsule was sealed by deaeration from the deaeration pipe while heating and crimping and welding the upper lid.

  Next, the capsule is subjected to HIP processing. The treatment was performed at a temperature of 650 ° C. and a pressure of 100 MPa for a treatment time of 3 hours. When the appearance after HIP was confirmed, cracks were observed in the weld.

  Therefore, the radiographic inspection was not performed, and the capsule adhering to the sintered body of the Cu—Ga alloy was removed by a lathe process, and then processed by a cylindrical grinder to be finished to an arbitrary dimension. Then, when a penetration inspection was conducted to confirm cracks on the surface, cracks were detected in several places.

Even in the obtained sintered body of Cu—Ga alloy, normal parts were extracted and sampled at the same locations as in Example 1 in order to confirm the relative density and the variation in relative density, and each sample was processed into a 10 mm square. When the density was measured by the Archimedes method, the average value of the relative density was 83.1% with respect to the true density of 8.6 g / m ³ . Moreover, the variation in relative density was 6.1%. Furthermore, when the Ga concentration of each part was analyzed, the average value of Ga concentration was 25.0 mass%, and the variation in Ga concentration was 0.2 mass%.

(Conventional example 1)
In Conventional Example 1, a cylindrical Cu—Ga alloy sputtering target was produced using a melting / casting method.

  In Conventional Example 1, to produce a cylindrical Cu-Ga alloy sputtering target, a starting material is 25% by mass of Ga, and the remainder is Cu so as to be melted and cast into a round mold. A columnar Cu—Ga alloy ingot was obtained. Next, the inner surface and the outer surface were turned to a desired size by turning. Thereafter, a penetration inspection was conducted to confirm cracks on the surface, but no cracks were found.

Next, in order to confirm the relative density of the obtained cylindrical Cu-Ga alloy sintered body and the variation in the relative density, sampling was performed at the same location as in Example 1, and each sample was processed into a 10 mm square. When the density was measured by the Archimedes method, the average value of the relative density was 100% with respect to the true density of 8.6 g / m ³ . The variation in relative density was 0.1%. Further, when the Ga concentration of each part was analyzed, the average value of Ga concentration was 25.4% by mass, and the variation in Ga concentration was 1.9% by mass.

  The component composition, capsule thickness, filling density, etc. of the above Examples, Comparative Examples and Conventional Examples are summarized in Table 1, and the relative density and Ga concentration are summarized in Table 2.

  From the results shown in Table 1 and Table 2, using a hot isostatic pressing method, the capsule thickness is 1.0 mm or more and less than 3.5 mm, and the filling of Cu-Ga alloy powder or Cu-Ga alloy compact In Examples 1 to 5 in which the density is 60% or more and the Ga concentration is 20 to 40%, cracks and cracks do not occur in the manufacturing process, there is no variation in relative density, and there is no variation in the Ga concentration. A cylindrical Cu—Ga alloy sputtering target was also obtained.

  Moreover, in Examples 1-3, and 5 whose clearance is 1.0 mm or less, the density of the Cu-Ga alloy sintered compact became high compared with Example 4 with a clearance larger than 1.0 mm.

  On the other hand, Comparative Examples 1 to 4 in which the capsule thickness is 1.0 mm or more and less than 3.5 mm, the filling density of the Cu-Ga alloy powder or the Cu-Ga alloy molded body is 60% or more, and the Ga concentration is not 20-40%. Then, cracks and cracks occurred, and variations in relative density increased.

  Further, in the conventional example using the melting / casting method, although cracking did not occur, the variation in Ga concentration became large, and the cylindrical Cu—Ga alloy sputtering target as in the examples could not be obtained.

  1 capsule, 2 outer frame, 3 middle cylinder, 4 lower lid, 5 upper lid, 6 exhaust pipe

Claims (3)

The amount of Ga is 20 to 40% by mass by weight, and the balance consists of Cu and inevitable impurities,
A cylindrical Cu-Ga alloy sputtering target characterized by having a relative density of 99% or more, a relative density variation of 1.0% or less, and a Ga concentration variation of 1.0 mass% or less. In the manufacturing method of a cylindrical Cu-Ga alloy sputtering target using a hot isostatic pressing method, the amount of Ga is 20 to 40% by mass by weight, and the balance is Cu and inevitable impurities.
A cylindrical capsule having a thickness of 1.0 mm or more and less than 3.5 mm is filled with Cu-Ga alloy powder or Cu-Ga alloy molded body so that the filling density is 60% or more, and hot isostatic pressing is performed. A method for producing a cylindrical Cu-Ga alloy sputtering target, characterized in that a Cu-Ga alloy sintered body is obtained.   Filling the capsule with Cu-Ga alloy powder or Cu-Ga alloy compact so that the gap between the capsule and the filled Cu-Ga alloy powder or Cu-Ga alloy compact is 1.0 mm or less. The manufacturing method of the cylindrical Cu-Ga alloy sputtering target of Claim 2 characterized by these.

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