JP2014116068A - 磁気抵抗センサおよび装置 - Google Patents
磁気抵抗センサおよび装置 Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3909—Arrangements using a magnetic tunnel junction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Abstract
【解決手段】磁気抵抗読取センサは、2つの電極の間に配置された3層スタックである。3層スタックは、非磁性層によって隔てられた2つの自由層と、スタックの後部に配置され、ストライプ高さに相当する距離だけ浮上面から隔てられたバイアス磁石とを有する。センサ内の電流が絶縁層によって浮上面近くの領域に制限されることで、読取機の感度が向上する。
【選択図】図3
Description
磁気データ記憶および検索システムにおいて、磁気記録ヘッドは典型的に、磁気ディスクに格納されている磁気的に符号化された情報を検索するための磁気抵抗(MR)センサを有する読取部を含む。ディスクの表面からの磁束が、MRセンサの1つまたは複数の検知層の磁化ベクトルの回転を引起し、これによってMRセンサの電気抵抗率が変化する。この検知層は「自由」層と呼ばれることが多い。なぜなら、検知層の磁化ベクトルは外部の磁束に反応して自由に回転するからである。MRセンサの抵抗率の変化は、電流をMRセンサに流してMRセンサにかかる電圧を測定することによって検出できる。次に、外部回路が、電圧情報を適切なフォーマットに変換し、必要に応じてこの情報を操作してディスク上で符号化された情報を復元する。
磁気抵抗センサは、キャップ層と、非磁性層によって隔てられた第1の強磁性層および第2の強磁性層と、シード層とを含む3層スタックを備える。この3層センサは、スタックの後端に配置されたバックバイアス磁石によってバイアスされる。スタックを通る電流が浮上面近傍に制限されて感度が増すように、絶縁層が3層スタックを部分的に覆う。
図1は、磁気読取/書込ヘッド10の浮上面(ABS)に垂直な面に沿う、磁気読取/書込ヘッド10および磁気ディスク12の概略断面図である。磁気読取/書込ヘッド10の浮上面ABSは、磁気ディスク12のディスク面16に対向する。磁気ディスク12は、磁気読取/書込ヘッド10に対して、矢印Aで示す方向に移動または回転する。好ましくは、浮上面ABSとディスク面16との間隔は、磁気読取/書込ヘッド10と磁気ディスク12との接触を回避しつつ最小にされる。
Claims (20)
- 磁気抵抗センサであって、
第1の電極および第2の電極と、
前記第1の電極と前記第2の電極との間に配置された3層スタックとを備え、前記スタックは、非磁性層によって隔てられた第1の強磁性層および第2の強磁性層を含み、
前記3層スタックの後端に隣接するバックバイアス磁石と、
前記3層スタックと前記第1の電極および前記第2の電極のうちの少なくとも一方との間の絶縁層とを備え、前記第1の電極と前記第2の電極との間を流れる電流が前記3層スタックを通して流れるときに浮上面近傍に制限されるように、前記絶縁層は前記3層スタックを部分的に覆う、磁気抵抗センサ。 - 前記絶縁層は、前記3層スタックを完全に覆い、前記浮上面近くの前記絶縁層の一部は、前記第1の電極と前記第2の電極との間を流れる電流が前記3層スタックを通して流れるときに前記浮上面近傍に制限されるように、絶縁状態から導電状態に変換されている、請求項1に記載のセンサ。
- 前記絶縁層は、前記第1の電極と前記3層スタックの一部との間の第1の絶縁層を含む、請求項1に記載のセンサ。
- 前記絶縁層はさらに、前記第2の電極と前記3層スタックの一部との間の第2の絶縁層を含む、請求項3に記載のセンサ。
- 前記第1および第2の強磁性層それぞれの磁化の配向は、互いにほぼ垂直であり、浮上面に対して約45度である、請求項1に記載のセンサ。
- 前記非磁性層は導電体である、請求項1に記載のセンサ。
- 前記非磁性層は、Cu、Ag、Au、またはその合金のうち1つを含む、請求項6に記載のセンサ。
- 前記非磁性層は電気絶縁体である、請求項1に記載のセンサ。
- 前記非磁性層は、Al2Ox、TiOxおよびMgOからなる群より選択される、請求項8に記載のセンサ。
- 前記第1および第2の強磁性層は自由層である、請求項1に記載のセンサ。
- 前記自由層は、FeCoB、NiFeCo、CoFeHf、NiFe、FeCoまたはその合金のうち1つを含む、請求項10に記載のセンサ。
- 上部電極と、
下部電極と、
上部電極と下部電極との間に配置された3層スタックとを備え、前記スタックは、非磁性層によって隔てられた第1の強磁性層および第2の強磁性層を含み、
前記3層スタックの後端に隣接するバックバイアス磁石を備え、
前記上部電極と前記下部電極との間を流れる電流が前記3層スタックを通して流れるときに浮上面近傍に制限されるように、前記上部電極および前記下部電極のうちの少なくとも一方は、前記3層スタックの一部とのみ電気的に接触する、装置。 - 前記上部電極と前記3層スタックの一部との間の絶縁層をさらに備える、請求項12に記載の装置。
- 前記下部電極と前記3層スタックの一部との間の絶縁層をさらに備える、請求項13に記載の装置。
- 前記上部電極と前記3層スタックの一部との間の絶縁層と、前記下部電極と前記3層スタックの一部との間の絶縁層とをさらに備える、請求項12に記載の装置。
- 絶縁層が前記3層スタックを完全に覆い、前記浮上面近くの前記絶縁層の一部は、前記上部電極と前記下部電極との間を流れる電流が前記3層スタックを通して流れるときに前記浮上面近傍に制限されるように、絶縁状態から導電状態に変換されている、請求項12に記載の装置。
- 前記第1および第2の強磁性層それぞれの磁化の配向は、互いにほぼ垂直であり、浮上面に対して約45度である、請求項12に記載の装置。
- 前記非磁性層は導電体である、請求項12に記載の装置。
- 前記非磁性層は電気絶縁体である、請求項12に記載の装置。
- 前記第1および第2の強磁性層は自由層である、請求項12に記載の装置。
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US12/727,698 US8659855B2 (en) | 2010-03-19 | 2010-03-19 | Trilayer reader with current constraint at the ABS |
US12/727,698 | 2010-03-19 |
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JP2011059180A Division JP2011198456A (ja) | 2010-03-19 | 2011-03-17 | 磁気抵抗センサおよび装置 |
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JP2014116068A true JP2014116068A (ja) | 2014-06-26 |
JP5714144B2 JP5714144B2 (ja) | 2015-05-07 |
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JP2014022169A Expired - Fee Related JP5714144B2 (ja) | 2010-03-19 | 2014-02-07 | 磁気抵抗センサおよび装置 |
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US (1) | US8659855B2 (ja) |
JP (2) | JP2011198456A (ja) |
KR (1) | KR101349897B1 (ja) |
CN (1) | CN102298932B (ja) |
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US9269382B1 (en) | 2012-06-29 | 2016-02-23 | Western Digital (Fremont), Llc | Method and system for providing a read transducer having improved pinning of the pinned layer at higher recording densities |
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-
2010
- 2010-03-19 US US12/727,698 patent/US8659855B2/en active Active
-
2011
- 2011-03-17 JP JP2011059180A patent/JP2011198456A/ja active Pending
- 2011-03-18 KR KR1020110024376A patent/KR101349897B1/ko active IP Right Grant
- 2011-03-18 CN CN201110115828.8A patent/CN102298932B/zh active Active
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2014
- 2014-02-07 JP JP2014022169A patent/JP5714144B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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KR101349897B1 (ko) | 2014-01-13 |
US8659855B2 (en) | 2014-02-25 |
US20110228428A1 (en) | 2011-09-22 |
KR20110105728A (ko) | 2011-09-27 |
JP2011198456A (ja) | 2011-10-06 |
CN102298932B (zh) | 2015-08-26 |
CN102298932A (zh) | 2011-12-28 |
JP5714144B2 (ja) | 2015-05-07 |
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