JP2014112623A5 - - Google Patents
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- Publication number
- JP2014112623A5 JP2014112623A5 JP2012282431A JP2012282431A JP2014112623A5 JP 2014112623 A5 JP2014112623 A5 JP 2014112623A5 JP 2012282431 A JP2012282431 A JP 2012282431A JP 2012282431 A JP2012282431 A JP 2012282431A JP 2014112623 A5 JP2014112623 A5 JP 2014112623A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- ligand
- semiconductor
- film according
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 60
- 239000003446 ligand Substances 0.000 claims description 32
- 239000002096 quantum dot Substances 0.000 claims description 32
- 125000004429 atom Chemical group 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 125000001424 substituent group Chemical group 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 26
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims 4
- MXZROAOUCUVNHX-UHFFFAOYSA-N 2-Aminopropanol Chemical compound CCC(N)O MXZROAOUCUVNHX-UHFFFAOYSA-N 0.000 claims 4
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims 2
- UFULAYFCSOUIOV-XSCORUHJSA-N 2-aminoethanethiol Chemical class NCC[35SH] UFULAYFCSOUIOV-XSCORUHJSA-N 0.000 claims 2
- -1 InN Chemical compound 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- 239000013522 chelant Substances 0.000 claims 2
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 claims 2
- 150000002169 ethanolamines Chemical class 0.000 claims 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012282431A JP6086721B2 (ja) | 2012-10-31 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
| PCT/JP2013/077668 WO2014069211A1 (ja) | 2012-10-31 | 2013-10-10 | 半導体膜および半導体膜の製造方法 |
| US14/699,817 US10050161B2 (en) | 2012-10-31 | 2015-04-29 | Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012241230 | 2012-10-31 | ||
| JP2012241230 | 2012-10-31 | ||
| JP2012282431A JP6086721B2 (ja) | 2012-10-31 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014112623A JP2014112623A (ja) | 2014-06-19 |
| JP2014112623A5 true JP2014112623A5 (enExample) | 2015-07-16 |
| JP6086721B2 JP6086721B2 (ja) | 2017-03-01 |
Family
ID=50627125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012282431A Active JP6086721B2 (ja) | 2012-10-31 | 2012-12-26 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10050161B2 (enExample) |
| JP (1) | JP6086721B2 (enExample) |
| WO (1) | WO2014069211A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5964744B2 (ja) * | 2012-12-26 | 2016-08-03 | 富士フイルム株式会社 | 半導体膜の製造方法 |
| CN116847702A (zh) | 2016-07-20 | 2023-10-03 | 索尼公司 | 半导体膜的制造方法 |
| EP3399344B1 (en) * | 2017-05-03 | 2021-06-30 | ams International AG | Semiconductor device for indirect detection of electromagnetic radiation and method of production |
| KR102584733B1 (ko) * | 2018-09-30 | 2023-10-05 | 티씨엘 테크놀로지 그룹 코포레이션 | 퀀텀닷 |
| JP7589454B2 (ja) * | 2020-06-17 | 2024-11-26 | ａｒｔｉｅｎｃｅ株式会社 | 光電変換素子及び光電変換層形成用組成物 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000017655A1 (en) | 1998-09-18 | 2000-03-30 | Massachusetts Institute Of Technology | Water-soluble fluorescent semiconductor nanocrystals |
| JP2002048795A (ja) * | 2000-07-31 | 2002-02-15 | Mitsubishi Chemicals Corp | オリゴペプチド残基を結合してなる半導体超微粒子 |
| US20040007169A1 (en) | 2002-01-28 | 2004-01-15 | Mitsubishi Chemical Corporation | Semiconductor nanoparticles and thin film containing the same |
| JP2003286292A (ja) * | 2002-01-28 | 2003-10-10 | Mitsubishi Chemicals Corp | 半導体超微粒子及びそれを含有してなる薄膜状成形体 |
| JP2004315661A (ja) * | 2003-04-16 | 2004-11-11 | Mitsubishi Chemicals Corp | 半導体超微粒子及び電界発光素子 |
| JP5463538B2 (ja) * | 2008-03-18 | 2014-04-09 | 国立大学法人 東京大学 | 有機薄膜トランジスタの製造方法 |
| KR101699540B1 (ko) * | 2009-07-08 | 2017-01-25 | 삼성전자주식회사 | 반도체 나노 결정 및 그 제조 방법 |
| KR20130067137A (ko) * | 2011-12-13 | 2013-06-21 | 삼성전자주식회사 | 양자점-매트릭스 박막 및 그의 제조방법 |
-
2012
- 2012-12-26 JP JP2012282431A patent/JP6086721B2/ja active Active
-
2013
- 2013-10-10 WO PCT/JP2013/077668 patent/WO2014069211A1/ja not_active Ceased
-
2015
- 2015-04-29 US US14/699,817 patent/US10050161B2/en active Active