JP6086721B2 - 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス - Google Patents

半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス Download PDF

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JP6086721B2
JP6086721B2 JP2012282431A JP2012282431A JP6086721B2 JP 6086721 B2 JP6086721 B2 JP 6086721B2 JP 2012282431 A JP2012282431 A JP 2012282431A JP 2012282431 A JP2012282431 A JP 2012282431A JP 6086721 B2 JP6086721 B2 JP 6086721B2
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semiconductor
semiconductor film
semiconductor quantum
quantum dot
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JP2014112623A (ja
JP2014112623A5 (enExample
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雅司 小野
雅司 小野
菊池　信
信 菊池
田中　淳
淳 田中
鈴木　真之
真之 鈴木
義彦 金光
義彦 金光
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Fujifilm Corp
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Priority to PCT/JP2013/077668 priority patent/WO2014069211A1/ja
Publication of JP2014112623A publication Critical patent/JP2014112623A/ja
Priority to US14/699,817 priority patent/US10050161B2/en
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