JP2014111580A - 複素環化合物、発光素子、発光装置、電子機器、及び照明装置 - Google Patents
複素環化合物、発光素子、発光装置、電子機器、及び照明装置 Download PDFInfo
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- JP2014111580A JP2014111580A JP2013227438A JP2013227438A JP2014111580A JP 2014111580 A JP2014111580 A JP 2014111580A JP 2013227438 A JP2013227438 A JP 2013227438A JP 2013227438 A JP2013227438 A JP 2013227438A JP 2014111580 A JP2014111580 A JP 2014111580A
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- NCCYEOZLSGJEDF-UHFFFAOYSA-N n,n,9-triphenyl-10h-anthracen-9-amine Chemical compound C12=CC=CC=C2CC2=CC=CC=C2C1(C=1C=CC=CC=1)N(C=1C=CC=CC=1)C1=CC=CC=C1 NCCYEOZLSGJEDF-UHFFFAOYSA-N 0.000 description 1
- CRWAGLGPZJUQQK-UHFFFAOYSA-N n-(4-carbazol-9-ylphenyl)-4-[2-[4-(n-(4-carbazol-9-ylphenyl)anilino)phenyl]ethenyl]-n-phenylaniline Chemical compound C=1C=C(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=CC=1C=CC(C=C1)=CC=C1N(C=1C=CC(=CC=1)N1C2=CC=CC=C2C2=CC=CC=C21)C1=CC=CC=C1 CRWAGLGPZJUQQK-UHFFFAOYSA-N 0.000 description 1
- AJNJGJDDJIBTBP-UHFFFAOYSA-N n-(9,10-diphenylanthracen-2-yl)-n,9-diphenylcarbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C(C=3C=CC=CC=3)=C3C=CC=CC3=C(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 AJNJGJDDJIBTBP-UHFFFAOYSA-N 0.000 description 1
- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 1
- 150000005359 phenylpyridines Chemical class 0.000 description 1
- 150000003057 platinum Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- HRGDZIGMBDGFTC-UHFFFAOYSA-N platinum(2+) Chemical compound [Pt+2] HRGDZIGMBDGFTC-UHFFFAOYSA-N 0.000 description 1
- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- VLRICFVOGGIMKK-UHFFFAOYSA-N pyrazol-1-yloxyboronic acid Chemical compound OB(O)ON1C=CC=N1 VLRICFVOGGIMKK-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- JIIYLLUYRFRKMG-UHFFFAOYSA-N tetrathianaphthacene Chemical compound C1=CC=CC2=C3SSC(C4=CC=CC=C44)=C3C3=C4SSC3=C21 JIIYLLUYRFRKMG-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004704 ultra performance liquid chromatography Methods 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
【解決手段】ジベンゾ[f,h]キノキサリニル基と、ベンゾ[b]ナフト[1,2−d]フラニル基が、炭素数6〜13のアリーレン基を介して結合している複素環化合物。該ジベンゾ[f,h]キノキサリニル基、該ベンゾ[b]ナフト[1,2−d]フラニル基、及び該アリーレン基は、それぞれ独立に無置換である、又は炭素数1〜4のアルキル基もしくは炭素数6〜13のアリール基を置換基として有する。
【選択図】なし
Description
本実施の形態では、本発明の一態様の複素環化合物について説明する。
本実施の形態では、本発明の一態様の発光素子について図1を用いて説明する。
図1(A)に示す発光素子は、第1の電極201及び第2の電極205の間にEL層203を有する。本実施の形態では、第1の電極201が陽極として機能し、第2の電極205が陰極として機能する。
以下に、それぞれの層に用いることができる材料を例示する。なお、各層は、単層に限られず、二層以上積層してもよい。
陽極として機能する電極(本実施の形態では第1の電極201)は、導電性を有する金属、合金、導電性化合物等を1種又は複数種用いて形成することができる。特に、仕事関数の大きい(4.0eV以上)材料を用いることが好ましい。例えば、インジウムスズ酸化物(ITO:Indium Tin Oxide)、珪素もしくは酸化珪素を含有したインジウムスズ酸化物、インジウム亜鉛酸化物、酸化タングステン及び酸化亜鉛を含有した酸化インジウム、グラフェン、金、白金、ニッケル、タングステン、クロム、モリブデン、鉄、コバルト、銅、パラジウム、又は金属材料の窒化物(例えば、窒化チタン)等が挙げられる。
陰極として機能する電極(本実施の形態では第2の電極205)は、導電性を有する金属、合金、導電性化合物などを1種又は複数種用いて形成することができる。特に、仕事関数が小さい(3.8eV以下)材料を用いることが好ましい。例えば、元素周期表の第1族又は第2族に属する元素(例えば、リチウム、セシウム等のアルカリ金属、カルシウム、ストロンチウム等のアルカリ土類金属、マグネシウム等)、これら元素を含む合金(例えば、Mg−Ag、Al−Li)、ユーロピウム、イッテルビウム等の希土類金属、これら希土類金属を含む合金、アルミニウム、銀等を用いることができる。
発光層303は、発光物質を含む層である。本実施の形態では、発光層303が、ゲスト材料と、ゲスト材料を分散するホスト材料とを含み、該ホスト材料として本発明の一態様の複素環化合物を用いる場合を例に挙げて説明する。本発明の一態様の複素環化合物は、発光物質が蛍光性化合物や赤色〜黄緑色の範囲に含まれる光を発する燐光性化合物である場合の発光層のホスト材料として好適である。
発光層303に用いることができる蛍光性化合物の一例を挙げる。例えば、青色系の発光材料として、N,N’−ビス[4−(9H−カルバゾール−9−イル)フェニル]−N,N’−ジフェニルスチルベン−4,4’−ジアミン(略称:YGA2S)、4−(9H−カルバゾール−9−イル)−4’−(10−フェニル−9−アントリル)トリフェニルアミン(略称:YGAPA)、4−(10−フェニル−9−アントリル)−4’−(9−フェニル−9H−カルバゾール−3−イル)トリフェニルアミン(略称:PCBAPA)等が挙げられる。また、緑色系の発光材料として、N−(9,10−ジフェニル−2−アントリル)−N,9−ジフェニル−9H−カルバゾール−3−アミン(略称:2PCAPA)、N−[9,10−ビス(1,1’−ビフェニル−2−イル)−2−アントリル]−N,9−ジフェニル−9H−カルバゾール−3−アミン(略称:2PCABPhA)、N−(9,10−ジフェニル−2−アントリル)−N,N’,N’−トリフェニル−1,4−フェニレンジアミン(略称:2DPAPA)、N−[9,10−ビス(1,1’−ビフェニル−2−イル)−2−アントリル]−N,N’,N’−トリフェニル−1,4−フェニレンジアミン(略称:2DPABPhA)、9,10−ビス(1,1’−ビフェニル−2−イル)−N−[4−(9H−カルバゾール−9−イル)フェニル]−N−フェニルアントラセン−2−アミン(略称:2YGABPhA)、N,N,9−トリフェニルアントラセン−9−アミン(略称:DPhAPhA)等が挙げられる。また、黄色系の発光材料として、ルブレン、5,12−ビス(1,1’−ビフェニル−4−イル)−6,11−ジフェニルテトラセン(略称:BPT)等が挙げられる。また、赤色系の発光材料として、N,N,N’,N’−テトラキス(4−メチルフェニル)テトラセン−5,11−ジアミン(略称:p−mPhTD)、7,14−ジフェニル−N,N,N’,N’−テトラキス(4−メチルフェニル)アセナフト[1,2−a]フルオランテン−3,10−ジアミン(略称:p−mPhAFD)等が挙げられる。
正孔輸送層302は、正孔輸送性の高い物質を含む層である。
電子輸送層304は、電子輸送性の高い物質を含む層である。
正孔注入層301は、正孔注入性の高い物質を含む層である。
電子注入層305は、電子注入性の高い物質を含む層である。
電荷発生領域は、正孔輸送性の高い有機化合物に電子受容体(アクセプター)が添加された構成であっても、電子輸送性の高い有機化合物に電子供与体(ドナー)が添加された構成であってもよい。また、これらの両方の構成が積層されていてもよい。
本実施の形態では、本発明の一態様の発光装置について図2及び図3を用いて説明する。本実施の形態の発光装置は、本発明の一態様の発光素子を含む。該発光素子は、長寿命であるため、信頼性の高い発光装置を実現できる。
本実施の形態では、本発明の一態様を適用した発光装置を用いた電子機器及び照明装置の一例について、図4及び図5を用いて説明する。
本実施例では、下記構造式(201)に示される2−[3−(ベンゾ[b]ナフト[1,2−d]フラン−6−イル)フェニル]ジベンゾ[f,h]キノキサリン(略称:2mBnfPDBq)の合成方法について説明する。
1H NMR(CDCl3,300MHz):δ=7.51−7.65(m、3H)、7.76−7.86(m、7H)、8.14−8.18(m、2H)、8.20(s、1H)、8.44−8.52(m、2H)、8.66−8.73(m、3H)、9.03−9.04(m、1H)、9.27(dd、J=7.5Hz、1.8Hz、1H)、9.49(dd、J=7.8Hz、2.1Hz、1H)、9.54(s、1H)。
ガラス基板1100上に、珪素を含むインジウム錫酸化物(ITSO)膜をスパッタリング法にて成膜することで、陽極として機能する第1の電極1101を形成した。なお、その膜厚は110nmとし、電極面積は2mm×2mmとした。
比較発光素子2の発光層1113は、2mDBFPDBq−II、NPB、及び[Ir(dppm)2(acac)]を共蒸着することで形成した。ここで、2mDBFPDBq−II、NPB、及び[Ir(dppm)2(acac)]の重量比は、0.8:0.2:0.05(=2mDBFPDBq−II:NPB:[Ir(dppm)2(acac)])となるように調節した。また、発光層1113の膜厚は40nmとした。
発光素子3の作製方法の一部は、発光素子1と同様である。ここでは、発光素子1と異なる点のみ詳述する。まず、発光素子3の正孔注入層1111の膜厚は20nmとした。
本実施例では、下記構造式(209)に示される2−{3−[3−(ベンゾ[b]ナフト[1,2−d]フラン−6−イル)フェニル]フェニル}ジベンゾ[f,h]キノキサリン(略称:2mBnfBPDBq(6))の合成方法について説明する。
1H NMR(CDCl3,300MHz):δ=7.47−7.61(m、3H)、7.69−7.91(m、10H)、8.04−8.08(m、1H)、8.11(d、J=8.4Hz、1H)、8.14(s、1H)、8.34−8.40(m、2H)、8.45−8.48(m、1H)、8.64−8.73(m、4H)、9.25−9.28(m、1H)、9.43−9.50(m、2H)。
発光素子4は、発光層1113及び電子輸送層1114以外は発光素子3と同様に作製した。ここでは、発光素子3と異なる点のみ詳述する。
本実施例では、下記構造式に示される2−{3−[3−(ベンゾ[b]ナフト[1,2−d]フラン−8−イル)フェニル]フェニル}ジベンゾ[f,h]キノキサリン(略称:2mBnfBPDBq)の合成方法について説明する。
ステップ1の合成スキームを(D−1)に示す。
ステップ2の合成スキームを(D−2)に示す。
ステップ3の合成スキームを(D−3)に示す。
ステップ4の合成スキームを(D−4)に示す。
ステップ5の合成スキームを(D−5)に示す。
1H NMR(CDCl3,500MHz):δ=7.58(t、J=4.2Hz、1H)、7.62(t、J=4.7Hz、1H)、7.73−7.86(m、10H)、7.90(d、J=4.8Hz、1H)、7.92(d、J=5.1Hz、1H)、8.04(t、J=4.5Hz、2H)、8.32(s、1H)、8.36(d、J=4.5Hz、1H)、8.45(d、J=4.2Hz、1H)、8.66−8.71(m、4H)、9.26(dd、J1=4.5Hz、J2=1.2Hz、1H)、9.45(d、J=4.8Hz、1H)、9.49(s、1H)。
発光素子5は、発光層1113及び電子輸送層1114以外は発光素子3と同様に作製した。ここでは、発光素子3と異なる点のみ詳述する。
203 EL層
203a 第1のEL層
203b 第2のEL層
205 第2の電極
207 中間層
301 正孔注入層
302 正孔輸送層
303 発光層
304 電子輸送層
305 電子注入層
401 支持基板
403 発光素子
405 封止基板
407 封止材
409a 第1の端子
409b 第2の端子
411a 光取り出し構造
411b 光取り出し構造
413 平坦化層
415 空間
417 補助配線
419 絶縁層
421 第1の電極
423 EL層
425 第2の電極
501 支持基板
503 発光素子
504 発光素子
505 封止基板
506 乾燥剤
507 封止材
509 FPC
511 第1の絶縁層
513 第2の絶縁層
515 空間
517 配線
519 隔壁
521 第1の電極
523 EL層
525 第2の電極
531 ブラックマトリクス
533 カラーフィルタ
535 オーバーコート層
541a トランジスタ
541b トランジスタ
542 トランジスタ
543 トランジスタ
551 発光部
551a 発光部
551b 発光部
552 駆動回路部
553 駆動回路部
561 第1の電極
563 EL層
565 第2の電極
1100 ガラス基板
1101 第1の電極
1103 第2の電極
1111 正孔注入層
1112 正孔輸送層
1113 発光層
1114 電子輸送層
1115 電子注入層
7100 テレビジョン装置
7101 筐体
7102 表示部
7103 スタンド
7111 リモコン操作機
7200 コンピュータ
7201 本体
7202 筐体
7203 表示部
7204 キーボード
7205 外部接続ポート
7206 ポインティングデバイス
7300 携帯型ゲーム機
7301a 筐体
7301b 筐体
7302 連結部
7303a 表示部
7303b 表示部
7304 スピーカ部
7305 記録媒体挿入部
7306 操作キー
7307 接続端子
7308 センサ
7400 携帯電話機
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
7500 タブレット型端末
7501a 筐体
7501b 筐体
7502a 表示部
7502b 表示部
7503 軸部
7504 電源
7505 操作キー
7506 スピーカ
7601 照明装置
7602 照明装置
7603 卓上照明装置
7604 面状照明装置
7701 照明部
7703 支柱
7705 支持台
Claims (8)
- 一般式(G0)で表される複素環化合物。
(式中、A1は、ジベンゾ[f,h]キノキサリニル基を表し、A2は、ベンゾ[b]ナフト[1,2−d]フラニル基を表し、Arは、炭素数6〜13のアリーレン基を表し、前記ジベンゾ[f,h]キノキサリニル基、前記ベンゾ[b]ナフト[1,2−d]フラニル基、及び前記アリーレン基は、それぞれ独立に、無置換である、又は、炭素数1〜4のアルキル基もしくは炭素数6〜13のアリール基を置換基として有する。) - 一般式(G1)で表される複素環化合物。
(式中、R1〜R9及びR11〜R19は、それぞれ独立に、水素、炭素数1〜4のアルキル基、又は炭素数6〜13のアリール基を表し、Arは、炭素数6〜13のアリーレン基を表し、前記アリール基及び前記アリーレン基は、それぞれ独立に、無置換である、又は、炭素数1〜4のアルキル基もしくは炭素数6〜13のアリール基を置換基として有する。) - 一対の電極間に請求項1又は請求項2に記載の複素環化合物を含む層を有する発光素子。
- 一対の電極間に複素環化合物を含む層を有し、
前記複素環化合物は、ジベンゾ[f,h]キノキサリン骨格と、ベンゾ[b]ナフト[1,2−d]フラン骨格と、を有する発光素子。 - 一対の電極間に複素環化合物を含む層を有し、
前記複素環化合物は、ジベンゾ[f,h]キノキサリン骨格及びベンゾ[b]ナフト[1,2−d]フラン骨格がアリーレン骨格を介して結合した複素環化合物である発光素子。 - 請求項3乃至5のいずれか一項に記載の発光素子を発光部に有する発光装置。
- 請求項6に記載の発光装置を表示部に有する電子機器。
- 請求項6に記載の発光装置を発光部に有する照明装置。
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JP2015227324A (ja) * | 2013-09-13 | 2015-12-17 | 株式会社半導体エネルギー研究所 | ジベンゾ[f,h]キノキサリン誘導体、ジベンゾ[f,h]キノキサリン誘導体の合成方法、発光素子、発光装置、電子機器、および照明装置 |
KR20170001609A (ko) * | 2015-06-25 | 2017-01-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 헤테로 고리 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
JP2017008043A (ja) * | 2015-06-25 | 2017-01-12 | 株式会社半導体エネルギー研究所 | 複素環化合物、発光素子、発光装置、電子機器、および照明装置 |
US10811617B2 (en) | 2015-06-25 | 2020-10-20 | Semiconductor Energy Laboratory Co., Ltd. | Heterocyclic compound, light-emitting element, light-emitting device, electronic device, and lighting device |
JP2021119147A (ja) * | 2015-06-25 | 2021-08-12 | 株式会社半導体エネルギー研究所 | 複素環化合物、発光素子、発光装置、電子機器、および照明装置 |
KR102623836B1 (ko) * | 2015-06-25 | 2024-01-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 헤테로 고리 화합물, 발광 소자, 발광 장치, 전자 기기, 및 조명 장치 |
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JP6247502B2 (ja) | 2017-12-13 |
TW201431854A (zh) | 2014-08-16 |
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KR20150079646A (ko) | 2015-07-08 |
WO2014069613A1 (en) | 2014-05-08 |
US20140124764A1 (en) | 2014-05-08 |
US9368732B2 (en) | 2016-06-14 |
KR102148047B1 (ko) | 2020-08-25 |
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