JP2014093406A - Wiring board with through electrode and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a fine through electrode which is excellent in heat dissipation by using a glass base material.SOLUTION: A wiring board with a through electrode is constituted by using a glass base material mainly composed of SiO, comprises: a plurality of through holes 11 formed in the glass base material; a metal layer 13 with predetermined thickness formed on the surface of the glass base material 12 including the through holes; an insulation layer 14 formed on the surface of the metal layer and having predetermined thickness for preventing leak current from a through electrode 15; and the through electrode 15 consisting of a conductive material formed at parts of the through holes 11, is excellent in heat dissipation since the through holes 11 with comparatively large diameters can be formed in the glass base material 12, and the wiring board includes the metal layer 13 with excellent thermal conductivity and a fine through electrode can be attached to the wiring board by adjusting the thickness of the metal layer 13.

Description

  The present invention relates to a wiring substrate with a through electrode that can be used as an interposer in which a through electrode is provided on a glass substrate, and a method for manufacturing the wiring substrate.

  Semiconductor devices such as various memories manufactured using wafer process technology, CMOS (Complementary Metal Oxide Semiconductor), and CPU (Central Processing Unit) are used for electrical connection. It has a terminal.

  The pitch of the connection terminals of the semiconductor element and the pitch of the printed wiring board side connection portion for electrical connection with the semiconductor element usually differ in scale by several to several tens of times. Therefore, when electrically connecting a semiconductor element and a printed wiring board, a relay substrate (semiconductor element mounting substrate) for pitch conversion called an interposer is used. A semiconductor element is mounted on one surface of the interposer and connected to the printed wiring board on the other surface or the peripheral portion of the substrate.

  As an interposer for mounting semiconductor elements on printed wiring boards, in addition to conventional organic substrates and organic buildup substrates, research on interposers using silicon or glass as the substrate material has recently been active as a high-end interposer. Has attracted a great deal of attention.

  An interposer using silicon or glass as a base material uses a technique called TSV (Through-Silicon Via) or TGV (Through-Glass Via) which forms a through-hole inside and fills the hole with a conductive material. It is a feature.

  A through electrode formed by such a technique is expected to have excellent electrical characteristics such as shortening the wiring length by connecting the front and back of the interposer at the shortest distance, and increasing the signal transmission speed. Moreover, it can be said that it is an effective mounting method for downsizing and increasing the density of electronic devices because of the structure in which wiring is formed inside. Furthermore, it is expected that low power consumption can be realized by adopting through-electrodes because multi-pin parallel connection is possible, it is not necessary to speed up the LSI itself, and excellent electrical characteristics can be obtained. .

  Particularly in recent years, much attention has been focused on glass interposers using glass as a substrate material.

  One of the major concerns of glass interposers is the realization of lower costs. This is because the silicon interposer can only be manufactured by wafer processing, whereas the glass interposer is considered to be capable of mass processing with a large panel. As a result, it has become possible to solve the cost problem that has been a major issue with high-performance and first-class interposers.

  However, there are several challenges to overcome when manufacturing glass interposers.

  One of them is workability. When the material is silicon, a technique for processing a fine hole having an opening diameter of about 10 μmφ has already been established, and a through hole having a substantially straight shape can be formed. On the other hand, glass is inferior in workability compared with silicon, so it is difficult to make fine holes, and the processing technology has not been established yet.

  Another major problem is a problem with heat dissipation of the substrate. That is, since the thermal conductivity of glass is lower than that of silicon, it is difficult for heat to escape from the inside and it is difficult to ensure reliability.

  Therefore, several techniques have been proposed to solve the above problems.

  As one of them, a manufacturing method of a wiring substrate with a through electrode has been proposed in which an inexpensive and good through electrode is formed on a glass substrate using a simple process (Patent Document 1).

  The other is that after forming a plurality of openings corresponding to the through electrodes in the resist coated on the metal thin film and reaching the metal thin film, the metal is cylindrically formed on the inner wall of each opening. After plating, the resist is removed. Thereafter, a method of forming glassware with through electrodes that forms fine through electrodes is proposed by pouring molten glass between the respective cylindrical metals and solidifying them, and then removing the metal thin film (patent) Reference 2).

JP 2012-119611 A JP 2011-119372 A

25th Electronics Packaging Society Spring Meeting 10D-14 “Three-Dimensional Mounting, Highly Airtight, Glass Wafer with Through-via“ SCHOTT HermeS ””

  However, although the method of Patent Document 1 describes that an electrode can be formed even in a fine through hole of a glass substrate, no specific disclosure has been made about a method of miniaturizing the through hole.

  In addition, the method of Patent Document 2 requires at least a fine through electrode forming step and a molten glass inflow step, which increases the number of manufacturing steps and the technical difficulty level, and makes it easy to manufacture. It's hard to say how.

  The present invention has been made in view of the above circumstances, and can form a through hole of an arbitrary size in a glass substrate, and is applied to the glass substrate surface including the through hole in the order of a metal layer and an insulating layer. It is an object of the present invention to provide a wiring substrate with a through electrode that can be used as an interposer having a highly reliable and fine through electrode by forming a through hole having an excellent configuration and a flexible diameter, and a method for manufacturing the wiring substrate.

In order to solve the above-mentioned problems, the invention corresponding to claim 1 is a wiring board using a glass base material mainly composed of SiO ₂ , and a plurality of through holes formed in the glass base material and the through holes A metal layer having a predetermined thickness formed on the surface of the glass substrate including the holes, an insulating layer formed on the surface of the metal layer and having a predetermined thickness for preventing leakage current from a through electrode to be described later, A wiring substrate with a through electrode, comprising: the through electrode made of a conductive material formed in a through hole portion.

The invention corresponding to claim 2 is the wiring substrate with through electrodes according to the invention corresponding to claim 1, wherein the thermal conductivity of the metal layer is 10 W · m ⁻¹ · K ^{−1 to} 400 W · m ^{−1. -It} is within the range of K- ¹ .

  The invention corresponding to claim 3 is the wiring substrate with a through electrode according to claim 1 or 2, wherein the main material of the through electrode is Cu, Ag, Au, Ni, Pt, Pd, It is characterized by being any one of Ru and Fe or any one of alloys containing these metals.

  The invention corresponding to claim 4 is the wiring substrate with a through electrode according to any one of claims 1 to 3, wherein the wiring substrate is attached to one side or both sides of the wiring substrate, and The circuit board further includes a wiring board having a desired circuit configuration formed on the pasted conductor layer and provided with a through electrode for connection to the through electrode exposed from the wiring board.

  According to a fifth aspect of the present invention, in the wiring substrate with a through electrode according to the fourth aspect of the present invention, a semiconductor element is mounted on the surface portion of the wiring board.

The invention corresponding to claim 6 is a method of manufacturing a wiring board using a glass base material mainly composed of SiO ₂ , a hole forming step of forming a plurality of through holes in the glass base material, and the hole forming step A step of forming a metal layer having a predetermined thickness on the surface portion of the glass substrate including the through-hole formed in the step, and an insulating layer having a predetermined thickness for preventing leakage current on the surface portion of the metal layer formed in this step. Including a step of forming, a step of forming a resist in a portion other than the through hole, a step of filling or filling the through hole with a conductive substance to form a through electrode, and a step of peeling the resist. It is a manufacturing method of the wiring board with a penetration electrode characterized by it.

  The invention corresponding to claim 7 is a method of manufacturing a wiring substrate with through electrodes according to the invention corresponding to claim 6, wherein a step of forming a wiring board in which conductive circuit wiring is applied to an insulating substrate, and the wiring A step of forming a through electrode by filling or embedding a conductive material in a through hole formed at a predetermined position of the plate, and a through-hole of the wiring board with respect to the through-electrode exposed from one side or both sides of the wiring substrate And a step of positioning and connecting the electrodes.

According to the present invention, in a wiring board using a glass base material mainly composed of SiO ₂ , a highly functional and highly reliable wiring board with a through electrode excellent in workability and heat dissipation and a method for manufacturing the same are provided. it can.

  That is, according to the invention according to claim 1, by covering the surface of the glass substrate including the through hole with a metal layer having a predetermined thickness, a substance having high thermal conductivity can be taken into the wiring board, As a result, a highly reliable interposer with enhanced heat dissipation can be realized.

  As a result, in a wiring board that does not contain a highly thermally conductive substance such as a metal layer in the glass substrate, heat may remain in the periphery of the chip mounting part and reduce reliability. By disposing inside as a layer for heat dissipation, there is an effect that heat is dispersed and released. In particular, if a thermal via or the like is formed and connected to a heat radiating plate or the like in which this metal layer is disposed outside the interposer, an even higher heat radiating effect can be expected.

  In addition, a fine through electrode can be formed by freely controlling the thickness of the metal layer.

In general, it is very difficult to process a glass substrate containing SiO ₂ as a main component. For example, even if the via (hole) size that can be formed by laser processing, which is an existing technology, is small, the limit is about 50-60 μm at most. Also, in this size, the via shape is not straight but is likely to be tapered.

  However, in the invention according to claim 1, after opening a through-hole of a large size that can be easily formed in a glass substrate in advance, the thickness of the metal layer is freely adjusted and controlled, so that the opening diameter is 50 μmφ or less. Even a hole can be easily formed. For example, after opening a through hole having a large diameter of 100 μmφ in a glass substrate, a metal layer of 30 μm is formed on the surface of the glass substrate including the through hole, so that the final opening diameter is 40 μmφ. It is possible to form a fine through electrode that is difficult to form with existing technology.

According to the invention of claim 2, as the thermal conductivity of the metal layer of the heat dissipating applications, it is a value that is at least 10 W · ^m in the range of ^{-1 · K -1 ~400W · m -1} · K -1 It is characterized by. In general, the thermal conductivity of float glass, which is glass, is about ¹ W · m ⁻¹ · K ⁻¹ , and even if quartz glass having a high SiO ₂ purity is about 1.3 W · m ⁻¹ · K ⁻¹ , the glass is thermally conductive. The rate is low.

On the other hand, in the case of metal, for example, aluminum is about 200 W · m ⁻¹ · K ⁻¹ , and copper is about 380 W · m ⁻¹ · K ^−1, which is much higher. Among metals, titanium having a low thermal conductivity has a value of about 17 W · m ⁻¹ · K ⁻¹ and 10 times that of glass, and as a result, heat dissipation is enhanced.

  According to the invention of claim 3, if the main material of the through electrode is Cu, Ag, Au, Ni, Pt, Pd, Ru, Fe, or an alloy containing these metals, these simple substances or alloys This material can be easily deposited by plating and has excellent electrical characteristics. Of these, copper is particularly excellent in terms of both electrical characteristics and cost.

  Further, according to the inventions according to claims 4 and 5, mounting the wiring board on the front and back surfaces of the wiring board with through electrodes enables mounting of the semiconductor element on the wiring board and mounting on the printed wiring board. It can be used as a semiconductor device. At this time, by connecting the through electrode on the wiring board side and the through electrode on the wiring board side, excellent electrical characteristics such as high-speed transmission characteristics are obtained. In addition, the structure in which wiring is formed inside contributes to miniaturization of electronic equipment.

  Furthermore, according to the invention which concerns on Claim 6 and 7, after positioning and overlapping the wiring board formed in the process different from the said wiring board on the front and back of the wiring board, connecting the penetration electrodes to each other Features. The wiring board formed in a separate process is obtained by applying conductive circuit wiring to an insulating base. For example, polyimide can be used for the insulating base and copper can be used for the conductive circuit wiring. The wiring board can have a multilayer wiring structure as well as a single layer.

  According to this manufacturing method, rather than forming wiring layers one by one on a glass-based wiring board, it is possible to significantly shorten the process by using a method in which wiring boards prepared in a separate process are stacked. It becomes.

BRIEF DESCRIPTION OF THE DRAWINGS Sectional drawing of the schematic structure which shows one Embodiment of the wiring board with a penetration electrode which concerns on this invention. The figure explaining an example of the manufacturing method of the wiring board with a penetration electrode concerning the present invention. Sectional drawing of schematic structure of the wiring board for overlapping on the front and back of the wiring board with a penetration electrode concerning the present invention. The figure explaining an example of the manufacturing method of the wiring board shown in FIG. Sectional drawing of the structure which piled up the wiring board shown in FIG. 3 on the front and back of the wiring board with a penetration electrode shown in FIG.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view showing an embodiment of a wiring board with a through electrode according to the present invention.

The wiring substrate 10 with a through electrode is made of glass mainly composed of SiO _{2 and} has a glass base 12 having a plurality of through holes 11a formed in the thickness direction, and a surface of the glass base 12 including the through holes 11a. A metal layer 13 including a metal cylindrical through-hole 11b formed to have a required thickness by a physical method such as sputtering or vapor deposition, or a chemical method such as plating, and the surface of the metal layer 13 An insulating layer 14 including an insulating cylindrical through-hole 11c formed in a required thickness and covered with an insulating material also in a portion corresponding to the metal cylindrical through-hole 11b, and in the insulating cylindrical through-hole 11c And a through electrode 15 formed by filling a conductive material.

  Therefore, the wiring board structure is a wiring board 10 with a through electrode having a multilayer structure in which the metal layer 13 and the insulating layer 14 are applied to the surface of the glass substrate 12 in this order.

  According to such an embodiment, by covering the surface of the glass substrate 12 including the through hole 11a with the metal layer 13 having a predetermined thickness, a substance having high thermal conductivity can be taken into the wiring board 10. As a result, a highly reliable interposer with enhanced heat dissipation can be realized.

  In addition, since the thickness of the metal layer 13 can be freely controlled, the fine through electrode 15 can be easily formed.

  Next, an embodiment of a method for manufacturing a wiring substrate with through electrodes according to the present invention will be described with reference to FIG.

First, a glass substrate 12 whose main component is SiO ₂ (see FIG. 2 (a)).

  A plurality of through holes 11a,... Are formed in the thickness direction of the glass substrate 12 with a required interval (see FIG. 2B). A method of forming the through hole 11a may be a method of penetrating with a laser, a drill, wet etching, or the like, but is not limited thereto.

The glass substrate 12 is not particularly limited as long as glass composed mainly of SiO _2. For example, quartz glass, borosilicate glass, non-alkali glass, or the like can be used.

  Next, the metal layer 13 is formed on the surface of the glass substrate 12 including the plurality of through holes 11a,... (See FIG. 2C). By forming this metal layer 13, a metal cylindrical through hole 11b is formed in the wall portion of the through hole 11a.

  The means for forming the metal layer 13 including the metal cylindrical through-hole 11b can be formed by a physical method such as sputtering or vapor deposition, but is preferably formed by a chemical method by plating. When the plating method is used, it is easier to form a thin film inside the hole more uniformly than the physical method for holes having a high aspect ratio, and there is no need to use a large vacuum system. Therefore, the metal layer 13 can be formed at a low cost. The wall surface portion corresponding to the through hole 11a is also formed of a thin metal film, and is formed as a metal cylindrical through hole 11b.

When the metal layer 13 is formed by plating on the surface of the glass substrate 12 including the through holes 11a, an electroless plating method can be used. For example, electroless plating can be performed by forming one layer of an organic layer or the like that can carry an electroless plating catalyst on the glass substrate 12. By using a silane coupling agent or the like with respect to SiO ₂ which is the main component of the glass substrate 12, a siloxane bond can be formed between the surface layer of the glass substrate 12 and the silanol group. Can be formed. A catalyst can be supported on the functional group portion of the organic layer, and as a result, electroless plating becomes possible.

The metal layer 13 is not limited as long as the thermal conductivity is at least 10 W · m ⁻¹ · K ⁻¹ or more, but copper can be used when considering a metal that can be easily formed by plating and has high thermal conductivity. It is desirable. Incidentally, the thermal conductivity of copper is about 380 W · m ⁻¹ · K ⁻¹ .

Thus, the thermal conductivity of the metal layer 13, is preferably in the range of ^{10W · m -1 · K -1 ~400W} · m -1 · K -1.

  Further, it is desirable that the functional group portion of the silane coupling agent constituting the organic layer has an electron donating group. The reason is that the electron donating group interacts with metal ions such as palladium and platinum which serve as a catalyst for electroless plating, and the metal ions can be selectively adsorbed on the organic layer. The electron donating group of the silane coupling agent may be an amino group or a thiol group, but is not limited thereto.

  Moreover, the metal ion adsorbed on the organic layer becomes a metal by performing a reduction treatment, and can be used as a catalyst. At this time, metal ions can be reduced with a reducing agent in the electroless plating solution in the next step.

  Moreover, when a metal ion cannot be reduced with the reducing agent in the electroless plating solution, it is necessary to reduce the metal ion in advance before the electroless plating step. For example, when palladium ions are adsorbed as a catalyst, it can be reduced if the reducing agent in the electroless plating solution is sodium hypophosphite or dimethylamine borane, but cannot be reduced in the case of formaldehyde. Reduction is required with borane. The reducing agent that can be used includes, but is not limited to, sodium hypophosphite, dimethylamine borane, formalin, sodium borohydride, hydrazine and the like.

  When forming the metal layer 13 on the surface of the glass substrate 12, the heat dissipation and the diameter of the through electrode 15 are taken into consideration and the thickness is controlled to a desired value. For example, a method of obtaining a predetermined thickness by performing electroless plating for a long time, or a method of forming a thin metal layer 13 by electroless plating or sputtering, and then thickening the metal layer by electrolytic plating using these as a seed layer However, these methods are not limited. However, it is desirable to use electrolytic plating that can thicken the metal layer 13 in a short time.

  Further, an insulating layer 14 is formed on the surface of the metal layer 13 including the plurality of metal cylindrical through holes 11b,... (See FIG. 2D). By forming this insulating layer 14, a cylindrical through hole 11c is formed in the inner wall portion of the metal cylindrical through hole 11b.

  Hereinafter, for convenience of explanation, the through hole 11 is collectively referred to as including the through hole 11a, the cylindrical metal through hole 11b, and the cylindrical insulating through hole 11c.

  As a means for forming the insulating layer 14 including the insulating cylindrical through-hole 11c which is the through-hole 11, a CVD method or the like can be mentioned, but it is not particularly limited. The insulating layer 14 is provided to insulate the metal layer 13 and the through electrode 15 from each other.

  The thickness of the insulating layer 14 is not limited as long as a leak current from the through electrode 15 does not flow. However, considering the reliability, it is desirable to form the insulating layer 14 at least about 1 μm.

  After forming the insulating layer 14 including the through hole 11, the resist 16 is patterned on the portion other than the through hole 11 by photolithography, and then only the through hole 11 is filled (filled) with the conductive material to form the through electrode 15. To do. At this time, by patterning the resist 16 slightly wider than the opening diameter of the through hole 11, it is possible to simultaneously form lands that are component mounting conductive patterns on the through electrode 15 (see FIG. 2E and FIG. 2). (Refer figure (f)).

  By forming the lands in advance in this way, alignment in the process of overlaying wiring boards (also referred to as wiring layers) to be described later becomes easy. Examples of the filling method include, but are not limited to, plating, sputtering, and a method using a conductive paste. However, it is desirable to use plating to form a uniform and void-free through electrode 15.

  When filling the insulating layer 14 in the through hole 11 by plating, an electroless plating method can be used in the same manner as the exemplified method. Thereafter, the through electrode 15 is formed by a method of completely filling the through hole 11 by electroless plating or a method of filling the through hole 11 by an electrolytic plating method using a layer formed by electroless plating as a seed layer. Although these methods are not limited, the penetration electrode 15 can be easily formed in a short time by performing electroplating.

  Furthermore, after the through electrode 15 is formed, the resist 16 is peeled off (see FIG. 2G), so that the fine through electrode 15 can be formed even on the glass substrate 12, and the heat dissipation is also excellent. The wiring board 10 can be manufactured.

Next, a wiring board applied to the wiring board 10 and a manufacturing method thereof will be described with reference to FIGS.
FIG. 3 is a schematic cross-sectional view illustrating an example of the wiring board 20.

  The wiring board 20 is a layer formed by bonding or overlapping the front and back surfaces of the wiring board 10 in a separate process from the wiring board 10, and includes an insulating base material 21, and the front and back surfaces of the insulating base material 21. Insulation applied so as to cover the circuit wirings 22 and 23 formed in the circuit board 24, the circuit wiring 24 formed through the both sides of the insulating base material 21, and the circuit wiring 23 formed on the back surface of the insulating base material 21 And a layer 25.

FIG. 4 is a diagram for explaining a method of manufacturing the wiring board 20. The wiring board 20 is formed in a separate process from the wiring board 10. As a means for forming the wiring board 20, it is formed as a multilayer wiring board using a build-up method.

  First, using the base material in which the conductor layer 22 ′ is bonded to the insulating base material 21 as a starting material (see FIG. 4A), the circuit layer 22 is formed by etching the conductor layer 22 ′ (FIG. 4B). )reference). Although the starting material is not limited, for example, a polyimide-based insulating resin can be used for the insulating base material 21, and a copper foil or the like can be used for the conductor layer 22 '.

  After the circuit wiring 22 is formed on the insulating base material 21, a required number of through holes 26 are formed at a predetermined position of the insulating base material 21 by processing with a laser or the like (see FIG. 4C).

  Subsequently, after the through hole 26 is filled with plating or conductive paste, a conductor layer 23 ′ is formed on the surface of the insulating base 21 opposite to the circuit wiring 22 (see FIG. 4D). The material of the conductor layer 23 'is not limited, but copper is desirable in consideration of cost and electrical characteristics.

  After that, the circuit wiring 23 is formed by etching the conductor layer 23 '(see FIG. 4E).

  Further, an insulating layer 25 is formed by coating or lamination so as to cover the circuit wiring 23 on the back surface side of the insulating base material 21, and then a through hole 27 is formed by a laser or the like (FIG. 4 (f) and FIG. 4 (g)). reference).

  Furthermore, the wiring board 20 can be produced by filling the through holes 27 with copper or the like by plating or conductive paste to form the circuit wiring 24 (see FIG. 4H).

  Any number of layers can be freely produced by repeating the series of steps described above. Moreover, although this figure demonstrated the manufacturing method of the wiring board 20 of the surface of the wiring board 10, the wiring board 20 of the back surface of the wiring board 10 can also be produced using the same method.

  Therefore, while aligning the front and back wiring boards 20 produced in a separate process and the wiring substrate 10 with through electrodes, by bonding or superimposing them by thermocompression bonding or the like, as shown in FIG. A wiring substrate 30 with a through electrode having the wiring board 20 on the front and back surfaces can be produced.

  At this time, the insulating layer (insulating layer 25 in FIG. 5) in the wiring board 20 to be bonded or superimposed on the wiring board 10 at the position closest to the front and back surfaces is an adhesive layer made of a thermoplastic resin, for example, It can be easily joined by using a polyimide-based adhesive or the like. By mounting a semiconductor element on the wiring board 30, it can be used as a glass interposer.

  Examples of the method for manufacturing a wiring substrate with through electrodes according to the present invention will be described.

  First, through-hole vias (through-holes 11) having an opening diameter of 80 μmφ and a pitch of 250 μm were formed in a non-alkali glass having a thickness of 300 μm by a laser. The glass substrate 12 is immersed in a mixed solution of silane coupling agent APTES having an amino group APTES and toluene (APTES: toluene = 1: 9) at 60 ° C. for 30 minutes with respect to the glass substrate 12 having the through-hole via. An organic monomolecular film was formed thereon.

  Next, the glass substrate 12 described above is immersed in a 0.2 g / L palladium chloride aqueous solution at room temperature for 10 minutes to support palladium ions serving as a catalyst in the organic film. Further, the glass substrate 12 with the catalyst attached was immersed in a solution containing 0.1 mol / L dimethylamine borane at 60 ° C. for 30 seconds to reduce palladium ions. Subsequently, a copper film having a thickness of 2 μm was uniformly applied on the glass substrate 12 by electroless copper plating using reduced palladium as a nucleus. Using this copper film as a seed layer, a metal layer 14 was formed by growing copper to a thickness of 20 μm by electrolytic copper plating.

Then, an insulating layer 14 having a thickness of 2 μm containing SiO ₂ as a main component was applied on the thick metal layer 13 by a CVD method. Further, a dry film resist was formed on the insulating layer 14, and patterning was performed by photolithography to form a pattern in anticipation of land formation of 50 μm larger than the diameter of the through-hole via refined to about 36 μm.

In the same manner as plating on the glass substrate 12, an organic film and a catalyst are supported on the SiO ₂ inside the through hole via without a resist using a silane coupling agent, and the inside of the through hole is formed by electroless copper plating. A uniform copper film of about 2 μm was formed. Via filling by electrolytic copper plating was performed using this copper film as a seed layer, and a through electrode 15 having a land with a diameter of 36 μmφ and 50 μm was formed.

  Next, an embodiment of a method for manufacturing the wiring board 20 will be described.

  A circuit is formed by photoetching a copper foil (conductor layer 22 ′) of a base material obtained by bonding a polyimide insulating base material 21 having a thickness of 30 μm and a conductor layer 22 ′, for example, a copper foil of 5 μm, and circuit wiring 22 is formed. Then, a through hole 26 having an opening diameter of about 40 μmφ was formed by laser from the polyimide side.

  Thereafter, the through hole 26 was filled with a conductive paste, and a conductor layer 23 ′ having a thickness of 5 μm was formed by electroless copper plating. Then, the circuit wiring 23 was formed by photoetching the conductor layer 23 ′.

  Furthermore, the insulating layer 25 was formed by coating with a thermoplastic polyimide adhesive, and the through hole 27 having an opening diameter of 40 μmφ was processed again from the back surface with a laser. Then, the through hole 27 was filled with a conductive paste, and the circuit wiring 24 on the opposite surface was formed by the same method.

  Finally, the fine through electrodes 15 (diameter 36 μmφ having a diameter of 36 μm) made of a glass substrate are obtained by laminating together by thermocompression while aligning the positions of the wiring substrate 10 with through electrodes and the wiring boards 20 on the front and back surfaces. And a wiring board usable as a glass interposer with excellent heat dissipation.

<Comparative example>
Hereinafter, comparative examples of the present invention and prior art documents will be described.

Table 1 is a table showing a comparison between the specification of the wiring substrate with through electrodes according to the present invention and the specification of the glass wafer with through electrodes of Non-Patent Document 1 listed in the item of the prior art document described above.

  As is apparent from this comparison result, in the present invention, the diameter of the through-hole with respect to the glass base material is larger than that of Non-Patent Document 1, so that the workability is excellent, and the surface of the glass base material By encapsulating the metal layer 13 in the wiring board, the thermal conductivity inside the wiring board 30 is improved, and a wiring board with a through electrode having excellent heat dissipation and a manufacturing method thereof can be provided.

Therefore, in a wiring board using a glass base material containing SiO ₂ as a main component, it is possible to provide a highly functional and highly reliable wiring board with a through electrode excellent in workability and heat dissipation and a method for manufacturing the wiring board. .

  By using the manufacturing method according to the present invention, it can be expected to be useful for a method of manufacturing an interposer substrate that can cope with higher functions and higher speeds of electronic devices in three-dimensional mounting.

  In addition, the said embodiment is shown as an example and is not intending limiting the range of invention. Each of the embodiments described above can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 10 ... Wiring board with a through-electrode, 11 (11a, 11b, 11c) ... Through-hole, 12 ... Glass base material, 13 ... Metal layer, 14 ... Insulating layer, 15 ... Through-electrode, 16 ... Resist, 21 ... Insulating plate, 22 '... conductor layer, 22 ... circuit wiring, 23' ... conductor layer, 23 ... circuit wiring, 24 ... through electrode, 25 ... insulating layer, 26, 27 ... through hole.

Claims (7)

In a wiring board using a glass substrate mainly composed of SiO ₂ ,
A plurality of through holes formed in the glass substrate;
A metal layer having a predetermined thickness formed on the surface of the glass substrate including the through hole;
An insulating layer formed on the surface of the metal layer and having a predetermined thickness for preventing leakage current from a through electrode to be described later;
A wiring substrate with a through electrode, comprising: the through electrode made of a conductive material formed in the through hole portion. The thermal conductivity of the metal layer, with a through hole electrode wiring board according to claim 1, characterized in that in the range of ^{10W · m -1 · K -1 ~400W} · m -1 · K -1.   The main material of the through electrode is any one of Cu, Ag, Au, Ni, Pt, Pd, Ru, Fe, or any one of alloys containing these metals. Item 3. A wiring board with through electrodes according to Item 2. In the wiring board with a penetration electrode according to any one of claims 1 to 3,
A desired circuit configuration is formed on a conductor layer attached to one or both sides of the wiring board and attached to an insulating base material, and a through electrode for connecting to the through electrode exposed from the wiring board is provided. A wiring board with a through electrode, further comprising a wiring board. In the wiring board with a penetration electrode according to claim 4,
A wiring board with a through electrode, wherein a semiconductor element is mounted on the surface of the wiring board. In the manufacturing method of a wiring substrate using the glass substrate mainly composed of SiO _2,
A hole forming step of forming a plurality of through holes in the glass substrate;
A step of forming a metal layer having a predetermined thickness on the surface portion of the glass substrate including the through hole formed in the hole forming step;
Forming an insulating layer having a predetermined thickness for preventing leakage current on the surface of the metal layer formed in this step;
Forming a resist in a portion other than the through hole;
A step of filling or filling the through hole with a conductive material to form a through electrode;
And a step of peeling the resist. A method of manufacturing a wiring substrate with a through electrode. In the manufacturing method of the wiring board with a penetration electrode according to claim 6,
Forming a wiring board with conductive circuit wiring on an insulating substrate;
A step of forming a through electrode by filling or embedding a conductive substance in a through hole formed at a predetermined position of the wiring board;
A method of manufacturing a wiring board with through electrodes, further comprising the step of positioning and connecting the through electrodes of the wiring board to the through electrodes exposed from one or both sides of the wiring board.

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