JP2014063186A - Photoresist stripper composition for manufacturing lcd comprising primary alkanolamine - Google Patents
Photoresist stripper composition for manufacturing lcd comprising primary alkanolamine Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
Description
本発明は、フォトレジスト剥離液組成物に関し、TFT−LCD全工程に使用可能な統合フォトレジスト剥離剤に関する。 The present invention relates to a photoresist stripping composition, and relates to an integrated photoresist stripping agent that can be used for the entire TFT-LCD process.
フラットパネルディスプレイ(FPD)の製造工程において、基板上に一定のパターンを形成するためにフォトリソグラフィ(Photo-lithography)工程が広く利用されている。このようなフォトリソグラフィ工程は、大きく露光工程、乾式又は湿式エッチング工程、及びアッシング(ashing)などの一連の工程から構成されており、基板上にフォトレジスト(Photo Resist)を塗布し露光した後、これに対して乾式又は湿式エッチングを行ってパターンを形成する。このとき、金属配線上に残っているフォトレジストは、フォトレジスト剥離剤を用いて除去することになる。 In a flat panel display (FPD) manufacturing process, a photo-lithography process is widely used to form a certain pattern on a substrate. Such a photolithography process is mainly composed of a series of processes such as an exposure process, a dry or wet etching process, and ashing, and after applying and exposing a photoresist (Photo Resist) on a substrate, On the other hand, a pattern is formed by dry or wet etching. At this time, the photoresist remaining on the metal wiring is removed using a photoresist remover.
これまで使われてきたLCD工程用フォトレジスト剥離剤の組成は、主に水を含まない有機系で、1,2級アルカノールアミン類、極性溶媒又はグリコール類の混合物が使われてきた。一般に、エッチング工程後に残存しているフォトレジストを上述のフォトレジスト剥離剤を用いて剥離させてから水で洗浄するが、この場合、金属配線が腐食され、フォトレジストの再吸着に因り不純物が生成されるという問題点がある。これは、アルカノールアミン類が水と混ざると水酸化イオンを発生させて、アルミニウムを含む金属の腐食性が相当増加するからである。そのため、金属配線の腐食を防止するための特別な腐食防止剤が必要とされるが、従来の腐食防止剤は、その原価が高くて経済性に劣るといった問題点があった。これにより、特に最近は、LCDのようなフラットパネルディスプレイの製造における工程原価の上昇が不可避であった。 The composition of the photoresist remover for LCD process that has been used so far is mainly an organic system that does not contain water, and a mixture of 1,2 alkanolamines, polar solvents or glycols has been used. Generally, the photoresist remaining after the etching process is stripped using the above-described photoresist stripper and then washed with water. In this case, metal wiring is corroded, and impurities are generated due to the re-adsorption of the photoresist. There is a problem of being. This is because when alkanolamines are mixed with water, hydroxide ions are generated, and the corrosivity of metals including aluminum is considerably increased. Therefore, a special corrosion inhibitor for preventing the corrosion of the metal wiring is required. However, the conventional corrosion inhibitor has a problem that its cost is high and it is inferior in economy. As a result, particularly recently, an increase in process costs in the manufacture of flat panel displays such as LCDs has been inevitable.
また、TFT LCD Al配線膜の場合、変性フォトレジストを剥離しなければならないが、このとき、弱塩基性アミンは、フォトレジスト除去能力の低下に因りフォトレジストの剥離が完璧ではない場合がある。韓国特許第10−0950779号には、弱塩基性アルカノールアミンが3級アルカノールアミンを含むフォトレジスト剥離剤組成物が開示されているが、同組成物を使用した結果、変性フォトレジストの剥離が完璧ではないという問題点があった。 In the case of a TFT LCD Al wiring film, the modified photoresist must be peeled off. At this time, the weakly basic amine may not be completely peeled off due to the reduced ability of removing the photoresist. Korean Patent No. 10-0950779 discloses a photoresist stripping composition in which a weakly basic alkanolamine contains a tertiary alkanolamine. As a result of using this composition, the stripping of the modified photoresist is perfect. There was a problem that it was not.
一方、水により活性化された強塩基性アルカノールアミンを使用する場合、Al及びCu配線膜の損傷が不回避であるため、これを解決するために、既存の有機系LCD用剥離液には腐食防止剤を微量添加する。しかし、水を含むフォトレジスト剥離液を用いてTFT−LCDフォトレジスト剥離工程を進行する場合、使用時間によって水が揮発するため、剥離液内の水の含有量が変化して、腐食防止剤の腐食防止能力及びフォトレジスト剥離能力が急激に変わる。従ってこれまで、有機系剥離液組成において強塩基性アルカノールアミンと腐食防止剤を添加したLCD用剥離液組成物に関しては多くの報告が存在したが、強塩基性アルカノールアミンを用いた水系LCD用剥離液組成物に関しては見つけるのが難しい。 On the other hand, when using a strongly basic alkanolamine activated by water, it is inevitable to damage the Al and Cu wiring films. In order to solve this problem, existing organic LCD stripping solutions are corrosive. Add a small amount of inhibitor. However, when the TFT-LCD photoresist stripping process is performed using a photoresist stripping solution containing water, the water volatilizes depending on the usage time. Corrosion prevention ability and photoresist stripping ability change rapidly. Therefore, until now, there have been many reports on the stripping composition for LCDs with the addition of strong basic alkanolamines and corrosion inhibitors in the organic stripping composition, but stripping for aqueous LCDs using strong basic alkanolamines. It is difficult to find for a liquid composition.
よって、本発明者らは、メルカプト基が含まれたアゾール系化合物を腐食防止剤として用いた、比較的安定した腐食防止及びフォトレジスト剥離剤を開発することにより、上記のような問題の解決を図る。
本発明の目的は、TFT−LCD用剥離液組成物添加剤であるメルカプト基が含まれたアゾール系化合物を腐食防止剤として用いて、水の含有量変化時にもCu及びAlの腐食防止及びフォトレジスト剥離能力を一定に維持する水系フォトレジスト剥離剤を提供することにある。
Therefore, the present inventors have solved the above-mentioned problems by developing a relatively stable corrosion prevention and photoresist stripper using an azole compound containing a mercapto group as a corrosion inhibitor. Plan.
An object of the present invention is to use an azole compound containing a mercapto group, which is a stripping liquid composition additive for TFT-LCD, as a corrosion inhibitor, to prevent corrosion of Cu and Al, and to prevent photolysis even when the water content changes. An object of the present invention is to provide a water-based photoresist stripper that maintains a constant resist stripping capability.
上記の目的を達成するための一具体例で、(a)1級アルカノールアミン1〜20重量%;(b)アルコール10〜60重量%;(c)水0.1〜50重量%;(d)極性有機溶剤5〜50重量%;及び(e)腐食防止剤0.01〜3重量%;を含むLCD製造用フォトレジスト剥離液組成物を提供する。 One specific example for achieving the above object is as follows: (a) primary alkanolamine 1-20% by weight; (b) alcohol 10-60% by weight; (c) water 0.1-50% by weight; Provided is a photoresist stripper composition for LCD production comprising:) a polar organic solvent 5-50 wt%; and (e) a corrosion inhibitor 0.01-3 wt%.
他の具体例で、上記1級アルカノールアミンは、モノエタノールアミン(Monoethanol amine)、モノイソプロパノールアミン(Monoisopropanol amine)、2−アミノ−2−メチル−1−プロパノール(2-amino-2-methyl-1-propanol)、2−メチルアミノエタノール(2-Methylaminoethanol)及び3−アミノプロパノールアミン(3-Aminopropanol amine)からなる群から選ばれた1種以上であることを特徴とするLCD用フォトレジスト剥離液組成物を提供する。
もう一つの具体例で、上記アルコールは、エチレングリコール(Ethylene Glycol)、1−ヘキサノール(1-Hexanol)、オクタノール(Octanol)、1−ヘプタノール(1-Heptanol)、1−デカノール(1-Decanol)、2−ヘプタノール(2-Heptanol)及びテトラヒドロフルフリルアルコール(Tetrahydrofurfurylalcohol)からなる群から選ばれた1種以上であることを特徴とするLCD用フォトレジスト剥離液組成物を提供する。
In another specific example, the primary alkanolamine is monoethanolamine, monoisopropanolamine, 2-amino-2-methyl-1-propanol (2-amino-2-methyl-1). Composition for removing photoresist for LCD, which is at least one selected from the group consisting of 2-propanol, 2-Methylaminoethanol and 3-Aminopropanolamine Offer things.
In another specific example, the alcohol may be ethylene glycol, 1-hexanol, octanol, 1-heptanol, 1-decanol, Provided is a photoresist stripping liquid composition for LCD, which is one or more selected from the group consisting of 2-Heptanol and Tetrahydrofurfurylalcohol.
もう一つの具体例で、上記腐食防止剤は、C5−C10ヘテロ環式化合物であり、環を構成する炭素が、N、O及びSからなる群から選ばれた一つ以上の原子で置換されてなり、該ヘテロ環の炭素原子にメルカプト基が置換されていることを特徴とするLCD製造用フォトレジスト剥離液組成物を提供する。 In another specific example, the corrosion inhibitor is a C 5 -C 10 heterocyclic compound, and the carbon constituting the ring is one or more atoms selected from the group consisting of N, O, and S. Provided is a photoresist stripping composition for LCD production, which is substituted and has a mercapto group substituted on a carbon atom of the heterocyclic ring.
もう一つの具体例で、上記ヘテロ環式化合物は、イミダゾールであることを特徴とするLCD製造用フォトレジスト剥離液組成物を提供する。
もう一つの具体例で、上記腐食防止剤は、2−メルカプトベンズイミダゾール(2-Mercaptobenzimidazole)、2,5−ジメルカプト−1,3,4−チアジゾール(2,5-Dimercapto-1,3,4-thiadizole)及び2−メルカプトベンゾチアゾール(2-Mercaptobenzothiazole)からなる群から選ばれた1種以上であることを特徴とするLCD製造用フォトレジスト剥離液組成物を提供する。
In another embodiment, the present invention provides a photoresist stripping composition for LCD production, wherein the heterocyclic compound is imidazole.
In another specific example, the corrosion inhibitor includes 2-mercaptobenzimidazole, 2,5-dimercapto-1,3,4-thiadizole (2,5-Dimercapto-1,3,4- There is provided a photoresist stripping composition for LCD production, which is one or more selected from the group consisting of thiadizole) and 2-mercaptobenzothiazole.
もう一つの具体例で、上記極性有機溶剤は、R-O(CH2CH2O)Hの化学式(ここで、上記Rは、線状炭化水素、分岐炭化水素又は環状炭化水素のうちの何れか一つである)を有するグリコールを含有するLCD製造用フォトレジスト剥離液組成物を提供する。 In another specific example, the polar organic solvent has a chemical formula of RO (CH 2 CH 2 O) H (where R is any one of linear hydrocarbons, branched hydrocarbons, and cyclic hydrocarbons). A photoresist stripper composition for LCD production comprising a glycol having
もう一つの具体例で、上記極性有機溶剤は、N−メチルピロリドン(N-methylpyrollidone,NMP)、スルホラン(Sulfolane)、ジメチルスルホキシド(Dimethylsulfoxide,DMSO)、ジメチルアセトアミド(Dimethylacetamide,DMAC)及びモノメチルホルムアミド(Monomethylformamide)からなる群から選ばれた1種以上であることを特徴とするLCD製造用フォトレジスト剥離液組成物を提供する。 In another specific example, the polar organic solvent includes N-methylpyrolidone (NMP), sulfolane, dimethyl sulfoxide (DMSO), dimethylacetamide (DMAC), and monomethylformamide (Monomethylformamide). And a photoresist stripping composition for LCD production, which is one or more selected from the group consisting of:
一具体例で、(a)1級アルカノールアミン1〜20重量%;(b)アルコール10〜60重量%;及び(c)極性有機溶剤5〜70重量%;を含むLCD製造用フォトレジスト剥離液組成物を提供する。
他の具体例で、上記1級アルカノールアミンは、2−アミノ−2−メチル−1−プロパノール(2-amino-2-methyl-1-propanol)であることを特徴とするLCD製造用フォトレジスト剥離液組成物を提供する。
In one embodiment, a photoresist stripper for LCD production comprising: (a) 1-20% by weight primary alkanolamine; (b) 10-60% by weight alcohol; and (c) 5-70% by weight polar organic solvent. A composition is provided.
In another specific example, the primary alkanolamine is 2-amino-2-methyl-1-propanol. A liquid composition is provided.
もう一つの具体例で、上記アルコールは、エチレングリコール(Ethylene Glycol)、1−ヘキサノール(1-Hexanol)、オクタノール(Octanol)、1−ヘプタノール(1-Heptanol)、1−デカノール(1-Decanol)、2−ヘプタノール(2-Heptanol)及びテトラヒドロフルフリルアルコール(Tetrahydrofurfurylalcohol)からなる群から選ばれた1種以上であることを特徴とするLCD用フォトレジスト剥離液組成を提供する。 In another specific example, the alcohol may be ethylene glycol, 1-hexanol, octanol, 1-heptanol, 1-decanol, There is provided a photoresist stripping solution composition for LCD, which is at least one selected from the group consisting of 2-Heptanol and Tetrahydrofurfurylalcohol.
以下、本発明を詳細に説明する。
本発明において、本発明によるフォトレジスト剥離液の構成要素は、メルカプト基が含まれたアゾール系化合物を腐食防止剤として0.01〜3重量%使用する。腐食防止剤の重量比が低すぎる場合は、金属配線膜に対する腐食防止効果がほとんど現れず、特に、腐食防止剤の含有量が低い場合、水の量が減るほど腐食防止効果の減少が著しい。腐食防止剤の重量比が高すぎる場合は、フォトレジスト剥離能力が弱くなる。本発明による組成物において腐食防止剤を3重量%使用する場合、腐食防止及び剥離能力に異常がないことを確認した。尚、腐食防止剤は高価なため、必要以上の量を投入する必要はない。
Hereinafter, the present invention will be described in detail.
In the present invention, the constituent of the photoresist stripping solution according to the present invention uses 0.01 to 3% by weight of an azole compound containing a mercapto group as a corrosion inhibitor. When the weight ratio of the corrosion inhibitor is too low, the corrosion prevention effect on the metal wiring film hardly appears. In particular, when the content of the corrosion inhibitor is low, the corrosion prevention effect decreases significantly as the amount of water decreases. When the weight ratio of the corrosion inhibitor is too high, the photoresist stripping ability is weakened. When 3% by weight of the corrosion inhibitor was used in the composition according to the present invention, it was confirmed that there was no abnormality in corrosion prevention and peeling ability. Since the corrosion inhibitor is expensive, it is not necessary to add more than necessary.
また、LCDパターン成分要素であるMo、Al及びCuなどの腐食防止能力を一層向上させるために、その他の腐食防止剤を添加できる。そして、pH11(10%水溶液基準)以上である1,2級アルカノールアミン(例:モノエタノールアミン(Monoethanolamine, MEA)、モノイソプロパノールアミン(Monoisopropanolamine, MIPA)、2−メチルアミノエタノール(2-Methylaminoethanol, 2-MAE)、ジエチルエタノールアミン(Diethylethanolamine、DEEOA)及びMDEA,MDMA,DEEOA混合液)の含有量は、1〜20重量%でありうる。水の含有量は0.1〜50重量%、アルコール(例;エチレングリコール(Ethylene Glycol, EG, 沸点:197.7℃)の含有量は10〜60重量%でありうる。極性有機溶剤としては、N−メチルピロリドン(N-methylpyrollidone, NMP)、ジメチルスルホキシド(Dimethylsulfoxide, DMSO)、ジメチルアセトアミド(Dimethylacetamide, DMAC)及びN−メチルホルムアミド(N-Methylformamide, NMF)等を5〜50重量%単独又は混合使用することができる。 In addition, other corrosion inhibitors can be added to further improve the corrosion prevention ability of the LCD pattern component elements such as Mo, Al and Cu. Then, a secondary alkanolamine having a pH of 11 (based on a 10% aqueous solution) or higher (eg, monoethanolamine (MEA), monoisopropanolamine, MIPA), 2-methylaminoethanol, 2 -MAE), diethylethanolamine (Diethylethanolamine, DEEOA) and MDEA, MDMA, DEEOA mixed liquid) content may be 1-20 wt%. The content of water may be 0.1 to 50% by weight, and the content of alcohol (eg; ethylene glycol (Ethylene Glycol, EG, boiling point: 197.7 ° C.)) may be 10 to 60% by weight. -Methylpyrrolidone (N-methylpyrollidone, NMP), dimethylsulfoxide (DMSO), dimethylacetamide (DMA), N-methylformamide (NMF), etc. are used alone or in a mixture of 5 to 50% by weight. be able to.
また、剥離後における洗浄力の向上のために、グリコール類は、ジエチレングリコールモノエチルエーテル(Diethyleneglycolmonoethylether, EDG)、ジエチレングリコールモノブチルエーテル(Diethyleneglycolmonobutylether、BDG)、トリエチレングリコールエーテル(Triethyleneglycolether, TEG)等を20%〜60%単独又は混合使用することができる。重量比は5〜50重量%が適当で、少なすぎる場合は硬化したフォトレジストを十分に溶解できず、逆に多すぎる場合は価格が高くなるという短所がある。 In order to improve the detergency after peeling, the glycols include diethylene glycol monoethyl ether (EDG), diethylene glycol monobutyl ether (BDG), triethylene glycol ether (TRIG), etc. 60% can be used alone or in combination. The weight ratio is suitably 5 to 50% by weight. If the amount is too small, the cured photoresist cannot be sufficiently dissolved.
剥離液に対する、pH11以上で沸点が150℃以上である1級アルカノールアミンの重量比は1〜20重量%が適当で、1重量%未満である場合は、変性フォトレジスト剥離力に問題が生じ、工程進行に伴う損失により剥離力に問題が生じる。20重量%超過の場合は、腐食防止剤が相対的に追加投入されなければならず、金属配線膜が腐食する恐れがあり、製造コストの上昇を招く。水の含有量は0.1〜50重量%、アルコール(沸点:150℃以上、(例;エチレングリコール(Ethylene Glycol, EG, 沸点:197.7℃)、テトラヒドロフルフリルアルコール(Tetrahydrofurfurylalcohol, THFA, 沸点:178℃)など)の含有量は10〜60重量%が適当で、比率が少なすぎる場合、Cu配線膜の腐食防止能力が低下する恐れがある。 The weight ratio of the primary alkanolamine having a pH of 11 or higher and a boiling point of 150 ° C. or higher with respect to the stripping solution is suitably 1 to 20% by weight. A problem arises in the peeling force due to loss accompanying the progress of the process. If the amount exceeds 20% by weight, a corrosion inhibitor must be added relatively, and the metal wiring film may be corroded, resulting in an increase in manufacturing cost. Water content is 0.1 to 50% by weight, alcohol (boiling point: 150 ° C or higher, eg, ethylene glycol (Ethylene Glycol, EG, boiling point: 197.7 ° C), tetrahydrofurfuryl alcohol (Tetrahydrofurfurylalcohol, THFA, boiling point: 178 10) to 60% by weight is appropriate, and if the ratio is too small, the corrosion preventing ability of the Cu wiring film may be lowered.
また、水の比率が高すぎる場合、Al金属配線が腐食する恐れがあり、フォトレジスト剥離効果が低下する。アルコールを添加しない場合、腐食防止及び剥離能力には影響を与えないが、剥離工程進行時、工程温度(40℃以上)と装備内の排気圧により水が揮発されて剥離液の寿命が短縮される。従って、LCDフォトレジスト剥離工程進行時、剥離液の使用時間に応じて適当量のアルコールを混合して使用すればよい。 Moreover, when the ratio of water is too high, the Al metal wiring may be corroded, and the photoresist stripping effect is reduced. If alcohol is not added, it will not affect corrosion prevention and stripping ability, but during the stripping process, the process temperature (above 40 ° C) and the exhaust pressure in the equipment will volatilize water, reducing the stripping solution life. The Accordingly, when the LCD photoresist stripping process proceeds, an appropriate amount of alcohol may be mixed and used according to the usage time of the stripping solution.
本発明によるフォトレジスト剥離液組成物は、水を含む水系である。水を含む水系剥離液は、有機系剥離液に比べてアミンの塩基度が一層活性化される。従って、フラットパネルディスプレイの製造工程において、乾式エッチング、インプラント及びハードベーク工程進行後に残っている変性フォトレジストに対する除去能力が、一般的に使用されている有機系LCD用剥離液に比べて、低い工程温度を適用しても遥かに優れている。低い工程温度の適用は、フラットパネルディスプレイの製造原価節減を可能にする。また、本発明による剥離液組成物は、最適の腐食防止剤を用いていることからアルミニウム配線と銅配線のどちらにも適用可能であり、有機膜及びCOA工程に導入できる。 The photoresist stripping composition according to the present invention is an aqueous system containing water. The aqueous stripping solution containing water is more activated in the basicity of the amine than the organic stripping solution. Accordingly, in the flat panel display manufacturing process, the removal capability for the modified photoresist remaining after the progress of dry etching, implanting and hard baking processes is lower than that of generally used organic LCD stripping solutions. Much better when temperature is applied. The application of low process temperatures allows for a reduction in manufacturing costs for flat panel displays. Moreover, since the stripping composition according to the present invention uses an optimum corrosion inhibitor, it can be applied to both aluminum wiring and copper wiring, and can be introduced into an organic film and a COA process.
また、グリコール類を一つ又は二つ以上混合してフォトレジストの剥離を効果的に補助できる。グリコール類は、溶解されたフォトレジストを剥離剤に広く行き渡らせる役割を果たして、迅速な除去に有用である。上述のグリコールの場合、構造がR-O(CH2CH2O)Hであり、ここで‘R'は、線状炭化水素、分岐炭化水素及び環状炭化水素のうちの何れか一つを示す。 Moreover, the peeling of the photoresist can be effectively assisted by mixing one or more glycols. Glycols serve to spread the dissolved photoresist widely to the release agent and are useful for rapid removal. In the case of the above-described glycol, the structure is RO (CH 2 CH 2 O) H, where “R” represents any one of a linear hydrocarbon, a branched hydrocarbon, and a cyclic hydrocarbon.
更に具体的には、ジエチレングリコールモノメチルエーテル(Diethyleneglycolmonomethylether, MDG)、ジエチレングリコールモノエチルエーテル(Diethyleneglycolmonoethylether, EDG)、ジエチレングリコールモノブチルエーテル(Diethyleneglycolmonobutylether, BDG)及びトリエチレングリコールエーテル(Triethyleneglycolether, TEG)等を使用することができる。 More specifically, diethyleneglycolmonomethylether (MDG), diethyleneglycolmonoethylether (EDG), diethyleneglycolmonobutylether (BDG), triethyleneglycolether (TRIG), and the like can be used. .
全体組成に対するグリコール類の重量比は10〜70重量%が適当で、上述のR-O(CH2CH2O)Hに該当するもののうち一つ又は二つ以上を混合して使用することができる。
一方、1級の強塩基性アルカノールアミンでも立体障害のある2−アミノ−2−メチル−1−プロパノール(2-amino-2-methyl-1-propanol, 以下“AMP”という)は、水なしでアルコール類だけ添加した有機系組成において腐食防止剤を使用せずに、変性されたフォトレジストを完全に剥離すると共に、Al及びCu配線の腐食を防止できる。
The weight ratio of glycols to the total composition is suitably 10 to 70% by weight, and one or two or more of those corresponding to the above-mentioned RO (CH 2 CH 2 O) H can be used in combination.
On the other hand, 2-amino-2-methyl-1-propanol (hereinafter referred to as “AMP”), which has a steric hindrance even with a primary strong base alkanolamine, does not contain water. In the organic composition to which only alcohols are added, the modified photoresist can be completely removed without using a corrosion inhibitor, and corrosion of Al and Cu wiring can be prevented.
AMPは、1級アミンであるため、水とは下記反応式(1)によりOH−を生成して金属配線膜を腐食させる。水がない場合、アミンと金属との腐食反応は下記反応式(2)の通りである。この時、AMPは、1級アミンではあるが、下記反応式(2)のRグループが非常に大きいことから立体障害が生じて腐食反応を抑制する。一方、AMPは、1級の強塩基性アミンであるため、変性されたフォトレジストの剥離に有利である。 Since AMP is a primary amine, water and OH − are generated by the following reaction formula (1) to corrode the metal wiring film. In the absence of water, the corrosion reaction between the amine and the metal is represented by the following reaction formula (2). At this time, although AMP is a primary amine, since the R group in the following reaction formula (2) is very large, steric hindrance occurs and suppresses the corrosion reaction. On the other hand, since AMP is a primary strong basic amine, it is advantageous for removing the modified photoresist.
(1)水溶液状態におけるアミンと銅との腐食反応
RNH2 + H2O → RNH3 + + OH-
Cu2+ + 2OH- → Cu(OH)2(s)
Cu(OH)2(s) + 4RNH3 + → [Cu(RNH2)4]
(2)有機溶液状態におけるアミンと銅との腐食反応
Cu2+ + 4RNH2 → Cu(RNH2)4 2
(1) Corrosion reaction between amine and copper in aqueous solution
RNH 2 + H 2 O → RNH 3 + + OH -
Cu 2+ + 2OH - → Cu ( OH) 2 (s)
Cu (OH) 2 (s) + 4RNH 3 + → [Cu (RNH 2 ) 4 ]
(2) Corrosion reaction between amine and copper in organic solution
Cu 2+ + 4RNH 2 → Cu (RNH 2 ) 4 2
よって、本発明は、TFT−LCDフォトレジスト剥離工程時、銅及びアルミニウム配線に対し、水が含まれているにもかかわらず腐食防止及び剥離能力に卓越し、工程進行後の変性フォトレジストに対する除去能力にも優れ、既存発明の長所を維持したまま短所は克服したフォトレジスト剥離組成物を提供できる。 Therefore, the present invention is excellent in corrosion prevention and stripping ability in the TFT-LCD photoresist stripping process even though water is contained in the copper and aluminum wiring, and is removed from the modified photoresist after the process has progressed. It is possible to provide a photoresist stripping composition that is excellent in ability and overcomes the disadvantages while maintaining the advantages of the existing invention.
本発明によるフォトレジスト剥離剤は、半導体又はフラットパネルディスプレイの製造工程において、工程進行後の変性フォトレジストに対する除去能力に優れ、アルミニウム配線と銅配線のどちらにも適用可能であり、有機膜及びCOA工程に導入でき、沸点が150℃以上のアルコール類及び水と混合して使用すれば、腐食防止能力が向上し使用時間を増大させることができる。 The photoresist stripper according to the present invention is excellent in the removal capability of the modified photoresist after the progress in the manufacturing process of a semiconductor or flat panel display, and can be applied to both aluminum wiring and copper wiring. If it can be introduced into the process and mixed with an alcohol having a boiling point of 150 ° C. or higher and water, the corrosion prevention ability is improved and the use time can be increased.
以下、本発明を下記実施例により詳しく説明する。但し、下記実施例は、本発明を例示するだけであって、本発明の内容を限定するものではない。 Hereinafter, the present invention will be described in detail with reference to the following examples. However, the following examples only illustrate the present invention and do not limit the contents of the present invention.
実施例1
本発明によるフォトレジスト剥離液組成物の性能を評価するための変性フォトレジスト剥離能力及び腐食防止能力試験は、次のような方法で行なった。剥離液組成物は、腐食防止剤として2−メルカプトベンズイミダゾールを1重量%含有し、アミン、水など残りの具体的な構成成分及びその組成(重量%)は、下記表1の通りである。フォトレジストが除去されていないAl金属膜配線ガラス基板をオーブンにて160℃の温度で10分間熱処理して製作した。上記製造された剥離液組成物を50℃に維持しながら、上記製作された基板を剥離液組成物に30秒間浸漬させ、変性されたフォトレジストの除去程度を評価した。
また、剥離液組成物を50℃に維持しながら、Cu金属膜配線ガラス基板を剥離液組成物に10分間浸漬させ、Cu配線膜の腐食有無を評価した。評価基準は、アセトンに10分間浸漬させたCu金属膜配線ガラス基板を対照群として使用した(表1)。
Example 1
The modified photoresist stripping ability and corrosion prevention ability test for evaluating the performance of the photoresist stripping composition according to the present invention was carried out by the following method. The stripping composition contains 1% by weight of 2-mercaptobenzimidazole as a corrosion inhibitor, and the remaining specific components such as amine and water and the composition (% by weight) are as shown in Table 1 below. An Al metal film wiring glass substrate from which the photoresist was not removed was heat-treated in an oven at a temperature of 160 ° C. for 10 minutes. While maintaining the prepared stripping composition at 50 ° C., the manufactured substrate was immersed in the stripping composition for 30 seconds, and the degree of removal of the modified photoresist was evaluated.
Further, while maintaining the stripping solution composition at 50 ° C., the Cu metal film wiring glass substrate was immersed in the stripping solution composition for 10 minutes, and the presence or absence of corrosion of the Cu wiring film was evaluated. As the evaluation standard, a Cu metal film wiring glass substrate immersed in acetone for 10 minutes was used as a control group (Table 1).
上記実験の結果値は、次のような記号で表1に示した。
[Al配線の変性フォトレジスト(PR)剥離能力]
◎:変性されたフォトレジストが完全除去された
△:変性されたフォトレジストが痕跡量残っている
X:変性されたフォトレジストが1/3以上残っている
The results of the above experiment are shown in Table 1 with the following symbols.
[Modified photoresist (PR) stripping ability of Al wiring]
◎: Modified photoresist completely removed Δ: Trace amount of modified photoresist remains X: 1/3 or more of modified photoresist remains
[Cu配線の腐食程度]
◎:対照群基板と腐食程度が同一
○:対照群基板と対比して膜厚は同一であるが表面に微弱の腐食が発生
△:対照群基板と対比して膜厚が減少し表面に腐食が発生
X:Cu配線膜が腐食されて膜厚が1/2以上減少した
[Corrosion degree of Cu wiring]
◎: Corrosion level is the same as that of the control group substrate ○: The film thickness is the same as that of the control group substrate, but weak corrosion occurs on the surface △: The film thickness is decreased compared to the control group substrate and the surface is corroded X: Cu wiring film was corroded and the film thickness was reduced by 1/2 or more.
MEA :モノエタノールアミン(Monoethanol amine)
MIPA :モノイソプロパノールアミン(Monoisopropanol amine)
DIPA :ジイソプロパノールアミン(Diisopropanol amine)
TIPA :トリイソプロパノールアミン(Triisopropanol amine)
AMP : 2−アミノ−2−メチル−1−プロパノール(2-amino-2-methyl-1-propanol)
MEA: Monoethanol amine
MIPA: Monoisopropanol amine
DIPA: Diisopropanol amine
TIPA: Triisopropanol amine
AMP: 2-amino-2-methyl-1-propanol
2-MAE:2−(メチルアミノ)エタノール(2-(Methylamino)ethanol)
MDEOA:メチルジエタノールアミン(Methyldiethanol amine)
DEEOA:ジエチルエタノールアミン(Diethylethanol amine)
AEEOA:アミノエチルエタノールアミン(Aminoethylethanol amine)
3-APN:3−アミノプロパノールアミン(3-Aminopropanol amine)
MDEA :メチルジエタノールアミン(Methyldiethanolamine)
2-MAE: 2- (Methylamino) ethanol
MDEOA: Methyldiethanol amine
DEEOA: Diethylethanol amine
AEEOA: Aminoethylethanol amine
3-APN: 3-Aminopropanol amine
MDEA: Methyldiethanolamine
MDMA :メチルジメタノールアミン(Methyldimethanolamine)
EG :エチレングリコール(EthyleneGlycol)
EDG :ジエチレングリコールモノエチルエーテル(Diethyleneglycolmonoethylether)
NMP :N−メチルピロリドン(N-methylpyrrolidone)
THFA :テトラヒドロフルフリルアルコール(Tetrahydrofurfurylalcohol)
MBI :2−メルカプトベンズイミダゾール(2-Mercaptobenzimidazole)
MDMA: Methyldimethanolamine
EG: Ethylene glycol (EthyleneGlycol)
EDG: Diethyleneglycolmonoethylether
NMP: N-methylpyrrolidone
THFA: Tetrahydrofurfurylalcohol
MBI: 2-Mercaptobenzimidazole
表1のように、腐食防止剤として2−メルカプトベンズイミダゾール(2-Mercaptobenzimidazole)を含んだ本発明の組成物条件において、変性PR剥離能力とCu配線腐食防止能力を共に満たす組成が得られる。 As shown in Table 1, under the composition conditions of the present invention containing 2-mercaptobenzimidazole as a corrosion inhibitor, a composition satisfying both the modified PR peeling ability and the Cu wiring corrosion prevention ability is obtained.
比較例1
腐食防止剤(MBI、2−メルカプトベンズイミダゾール)を含まないという点を除いては、実施例1と同一の方法で実験を行なった。その結果は表2の通りであり、表2に記載された略語は上述した通りである。
Comparative Example 1
The experiment was performed in the same manner as in Example 1 except that it did not contain a corrosion inhibitor (MBI, 2-mercaptobenzimidazole). The results are as shown in Table 2, and the abbreviations described in Table 2 are as described above.
表2の通り、水系フォトレジストにおいて1級アルカノールアミン及び水を使用しながらCu腐食防止剤を添加しない条件では、変性フォトレジスト剥離能力が落ちるか、又はCu配線腐食防止能力が顕著に減少した。 As shown in Table 2, the modified photoresist stripping ability decreased or the Cu wiring corrosion prevention ability was remarkably reduced under the conditions in which a primary corrosion rate was not added while using a primary alkanolamine and water in an aqueous photoresist.
実施例2
Cu腐食防止剤の種類又はアルコールの含有量だけを下記表3の通り異にすることを除いては、実施例1と同一の方法で実験を行なった。その結果は、表3の通りである。
Example 2
The experiment was performed in the same manner as in Example 1 except that only the type of Cu corrosion inhibitor or the alcohol content was changed as shown in Table 3 below. The results are shown in Table 3.
BIMD:ベンズイミダゾール(Benzimidazole)
IMD :イミダゾール(Imidazole)
4-MIMD:4−メチルイミダゾール(4-methylimidazole)
BTA :ベンゾトリアゾール(Benzotriazole)
TTA :テトラゾール(Tetrazole)
MBI :2−メルカプトベンズイミダゾール(2-Mercaptobenzimidazole)
2,5-DTA:2,5−ジメルカプト−1,3,4−チアジゾール(2,5-Dimercapto-1,3,4-thiadizole)
MBT:2−メルカプトベンゾチアゾール(2-Mercaptobenzothiazole)
BIMD: Benzimidazole
IMD: Imidazole
4-MIMD: 4-methylimidazole
BTA: Benzotriazole
TTA: Tetrazole
MBI: 2-Mercaptobenzimidazole
2,5-DTA: 2,5-Dimercapto-1,3,4-thiadizole (2,5-Dimercapto-1,3,4-thiadizole)
MBT: 2-Mercaptobenzothiazole
表3の結果から分かるように、メルカプト基が含まれていない化合物を腐食防止剤として使用した場合は、配線が腐食されたり、工程後に腐食防止剤が残留するといった問題点が発生したが、2−メルカプトベンズイミダゾール(2-Mercaptobenzimidazole)、2,5−ジメルカプト−1,3,4−チアジゾール及び2−メルカプトベンゾチアゾール(2-Mercaptobenzothiazole)のようなメルカプト基が含まれているアゾール系化合物を腐食防止剤として使用した場合は、配線の腐食がほぼ完全に防止され、残留する腐食防止剤も全くないことが確認できた。 As can be seen from the results in Table 3, when a compound containing no mercapto group was used as a corrosion inhibitor, problems such as corrosion of the wiring or remaining of the corrosion inhibitor after the process occurred. -Corrosion prevention for azole compounds containing mercapto groups such as 2-Mercaptobenzimidazole, 2,5-dimercapto-1,3,4-thiadizole and 2-mercaptobenzothiazole When used as an agent, it was confirmed that the corrosion of the wiring was almost completely prevented and there was no residual corrosion inhibitor.
実施例3
1級アミンとして、立体障害のあるAMP(2−アミノ−2−メチル−1−プロパノール)を用いて上記実施例1と同様の方法で実験を行なった。その結果は表4の通りである。
Example 3
An experiment was conducted in the same manner as in Example 1 using AMP (2-amino-2-methyl-1-propanol) having steric hindrance as the primary amine. The results are shown in Table 4.
表4の結果の通り、AMPは、水及び腐食防止剤を添加した場合だけでなく、水なしでアルコール類だけを添加した有機系組成において金属配線膜腐食剤を使用しない場合も、変性されたフォトレジストを完全に剥離すると共に、Al及びCu配線の腐食を効果的に防止できることが確認された。 As shown in Table 4, AMP was modified not only when water and a corrosion inhibitor were added, but also when a metal wiring film corrosive agent was not used in an organic composition in which only alcohols were added without water. It was confirmed that the photoresist can be completely removed and corrosion of the Al and Cu wirings can be effectively prevented.
以上の実験結果の通り、水系フォトレジスト剥離剤の製造時、強塩基である1級エタノールアミンとメルカプト基とが含まれているアゾール系化合物を腐食防止剤として用いれば、著しく変性されたフォトレジストの完全剥離と銅配線の腐食防止が両方可能である。また、立体障害のある1級アルカノールアミンであるAMPは、水が含まれていない有機系組成で用いられるとき、腐食防止剤なしでも銅配線が腐食されなかった。 As described above, if an azole compound containing a primary ethanolamine that is a strong base and a mercapto group is used as a corrosion inhibitor during the production of an aqueous photoresist stripper, the photoresist is significantly modified. It is possible to both completely peel off and prevent corrosion of copper wiring. In addition, when AMP, which is a primary alkanolamine having steric hindrance, is used in an organic composition not containing water, the copper wiring was not corroded even without a corrosion inhibitor.
以上、例示的な実施様態を参照しながら本発明について記述したが、本発明の属する技術分野の当業者であれば、本発明の範ちゅうを逸脱することなく多様な変化を実施しその要素を等価物で代替することが可能であることを理解できるであろう。 Although the present invention has been described above with reference to exemplary embodiments, those skilled in the art to which the present invention pertains can implement various changes without departing from the scope of the present invention. It will be understood that equivalents can be substituted.
また、本発明の本質的な範ちゅうを逸脱することなく多様な変形を実施して特定の状況及び材料を本発明の教示内容に採用することが可能である。従って、本発明が、本発明の実施にあたって計画された最上の様式として開示された特定の実施様態に極限されるのではなく、本発明の特許請求範囲に属する実施様態全てを含むものと解釈されなければならない。 In addition, various modifications may be made to adopt a particular situation and material to the teachings of the invention without departing from the essential scope thereof. Accordingly, the present invention is not limited to the specific embodiments disclosed as the best mode planned for the practice of the invention, but is construed to include all embodiments belonging to the claims of the present invention. There must be.
Claims (11)
(b)アルコール10〜60重量%;
(c)水0.1〜50重量%;
(d)極性有機溶剤5〜50重量%;及び
(e)腐食防止剤0.01〜3重量%;を含むLCD製造用フォトレジスト剥離液組成物。 (A) 1-20% by weight of primary alkanolamine;
(B) 10-60% by weight of alcohol;
(C) 0.1 to 50% by weight of water;
A photoresist stripping composition for LCD production, comprising: (d) 5-50% by weight of a polar organic solvent; and (e) 0.01-3% by weight of a corrosion inhibitor.
(b)アルコール10〜60重量%;及び
(c)極性有機溶剤5〜70重量%;を含むLCD製造用フォトレジスト剥離液組成物。 (A) 1-20% by weight of primary alkanolamine;
A photoresist stripping composition for LCD production comprising (b) 10-60 wt% alcohol; and (c) 5-70 wt% polar organic solvent.
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