KR20240044715A - Stripper composition for igzo substrate - Google Patents

Abstract

The present invention relates to a composition for photoresist stripping of IGZO substrates. According to the present invention, corrosion of the IGZO substrate can be prevented and photoresist peeling performance can be improved at the same time.

Description

Stripper composition for IGZO substrate {STRIPPER COMPOSITION FOR IGZO SUBSTRATE}

The present invention relates to a composition for photoresist stripping of IGZO substrates.

Generally, a display panel includes a display substrate on which thin film transistors are formed as switching elements for driving pixels. The display substrate includes a plurality of metal patterns, and the metal patterns are mainly formed through photolithography. In the photolithography method, a photoresist film is formed on a metal film to be etched on a substrate, the photoresist film is exposed and developed to form a photoresist pattern, the photoresist pattern is used as an etch prevention film, and the etchant is used as an etchant. This is a process that can pattern the metal film by etching the metal film.

In the photoresist stripping process, it is important to strip the photoresist without damaging the underlying metal film. In particular, in the case of the IGZO metal film, problems with abnormal IGZO device characteristics may occur due to corrosion.

To solve this problem, a stripper composition that prevents corrosion (damage) of the IGZO substrate and has excellent photoresist stripping performance is required.

The purpose of the present invention is to provide a composition that prevents damage to the IGZO substrate and improves photoresist peeling performance.

In order to solve the above problem, the present invention,

Two or more organic solvents; and

Provided is a stripping liquid composition for IGZO substrates containing an amine compound of Formula 1 or Formula 2.

[Formula 1]

In the above equation,

R ₁ is hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight or branched;

[Formula 2]

In the above equation,

X is N or C,

R ₂ is a hydrogen atom, hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight chain or branched.

According to one embodiment, the amine compound of Formula 1 may include one or more of monoethanol amine, amino propanol, and aminoethoxy ethanol.

According to one embodiment, the amine compound of Formula 2 may include one or more of hydroxyethyl piperazine and piperidine.

According to one embodiment, the two or more organic solvents may include an aprotic polar solvent and a protic organic solvent.

According to one embodiment, the aprotic polar solvent may include a compound of Formula 3:

[Formula 3]

In the above formula, R ₃ , R ₄ and R ₅ are each independently H or C _1-2 alkyl.

According to one embodiment, the aprotic polar solvent is N-methylacetamide, N,N-dimethylacetamide, acetamide, N-ethylacetamide, N,N-diethylacetamide, formamide, N-methyl It may include one or more of formamide, N,N-dimethylformamide, N-ethylformamide, N,N-diethylformamide, N-methylpyrrolidone, and N-ethylpyrrolidone.

According to one embodiment, the protic organic solvent may include a compound of Formula 4:

[Formula 4]

HO-[(C _1-2 )alkyl -O] _n -X In the above formula,

n is an integer from 0 to 2,

X is H, OH or C _1-4 alkyl.

According to one embodiment, the protic organic solvent is diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, ethylene glycol, diethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl It may include one or more of ether, methanediol, methoxy methanol, ethoxy methanol, methoxy ethanol, ethoxy ethanol, 2-(hydroxy methoxy) ethanol, and methoxy ethoxy ethanol.

According to one embodiment, the present invention may further include an azole-based corrosion inhibitor.

According to another embodiment of the present invention, with respect to the total weight of the composition,

40 to 99% by weight of two or more organic solvents; and

A method for producing a stripper composition for an IGZO substrate is provided, comprising the step of mixing 0.1 to 30% by weight of an amine compound of Formula 1 or Formula 2:

[Formula 1]

In the above equation,

R ₁ is hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight or branched;

[Formula 2]

In the above equation,

X is N or C,

R ₂ is a hydrogen atom, hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight chain or branched.

According to one embodiment, the organic solvent may include an aprotic polar solvent and a protic organic solvent in a weight ratio of 1:0.1 to 1:5.

According to another embodiment of the present invention, a semiconductor device manufactured using the stripper composition for IGZO substrates as described above is provided.

Specific details of other embodiments according to the present invention are included in the detailed description below.

According to the present invention, corrosion of the IGZO substrate can be prevented and photoresist peeling performance can be improved at the same time.

Since the present invention can be modified in various ways and can have various embodiments, specific embodiments will be illustrated and described in detail. However, this is not intended to limit the present invention to specific embodiments, and should be understood to include all transformations, equivalents, and substitutes included in the spirit and technical scope of the present invention. In describing the present invention, if it is determined that a detailed description of related known technologies may obscure the gist of the present invention, the detailed description will be omitted.

Unless otherwise specified within the specification, the expression “to” is used as an expression including the corresponding numerical value. Specifically, for example, the expression “1 to 2” means not only including 1 and 2, but also including all numerical values between 1 and 2.

Hereinafter, the stripper composition for IGZO substrates according to embodiments of the present invention will be described in more detail. The present invention provides a stripper composition that prevents corrosion of IGZO substrates and has excellent photoresist stripping performance.

The components of the stripper composition according to one embodiment of the present invention will be described in more detail as follows.

amine compounds

In the case of IGZO corrosion, corrosion generally occurs when DI is mixed, and the degree of corrosion varies greatly depending on the amine structure. Amines that can chelate IGZO have an increased likelihood of corrosion, and amines that cannot chelate have a reduced likelihood of corrosion. For example, when the structure has two or more nitrogen atoms and an alkyl group with two carbon atoms exists between the nitrogen atoms, and at least one of the nitrogen atoms is a primary amine, the primary amine is a chelatable amine. Since such amine compounds can chelate IGZO, corrosion of IGZO occurs when mixed with deionized water (DI).

According to one embodiment, based on the content of 1%, corrosion of IGZO occurs when DI is mixed in the case of ethylenediamine, aminoethyl ethanolamine, and diethylenetriamine. On the other hand, amine compounds that cannot be chelated, such as methylamine, ethanolamine, 2-(2-aminoethoxy)ethanol, and diethanolamine, cause corrosion of IGZO. does not cause

In the present invention, considering these characteristics of amines, the type and content of amines were optimized to effectively remove photoresist while maintaining normal IGZO device characteristics without causing damage to IGZO.

According to one embodiment, the present invention may include an amine compound of Formula 1 or Formula 2.

[Formula 1]

In the above equation,

R ₁ is hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight or branched;

[Formula 2]

In the above equation,

X is N or C,

R ₂ is a hydrogen atom, hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,

The alkyl or alkoxy may be straight chain or branched.

For example, the amine compound of Formula 1 may include one or more of monoethanol amine, amino propanol, and aminoethoxy ethanol. Additionally, the amine compound of Formula 2 may include one or more of hydroxyethyl piperazine and piperidine.

According to one aspect, the amine compound of the present invention may include an amine compound having one nitrogen atom. For example, it may include primary, secondary, and tertiary amine compounds with one nitrogen atom.

According to one embodiment, the primary amine compound may include a branched alkyl amine compound having 1 or more carbon atoms, for example, 1 to 10 carbon atoms, and the alkyl is substituted with an OH group. It can be. Specifically, for example, ethanolamine, monoisopropanolamine, butylamine, 2-(2-aminoethoxy)ethanol, 2-ethoxyethyl. Amine (2-ethoxyethyl amine), 2-methoxyethylamine, 2-amino-2-butanol (1-amino-2-butanol), propylamine (PA), isopropylamine , IPA), 3-amino-1-propanol, methylamino propanol (2-(methylamino)propan-1-ol), 2-amino-1-propanol (2-amino-1) -propanol), 2-(3-aminopropoxy)ethanol (2-(3-aminopropoxy)ethanol), 4-amino-1-butanol (4-amino-1-butanol), 3-aminobutan-1-ol (3-aminobutan-1-ol), 3-amino-2-methyl-1-propanol, 4-amino-2-butanol ), 4-aminopentan-1-ol, 4-amino-3-methylbutan-1-ol (4-amino-3-methylbutan-1-ol), 4-amino- 2-methyl-1-butanol (4-amino-2-methyl-1-butanol), 5-amino-pentan-2-ol (5-amino-pentan-2-ol) and 5-amino-1-pentanol It may contain one or more of (5-amino-1-pentanol).

According to one embodiment, the secondary amine compound may include a cyclic compound having 1 to 20 carbon atoms, for example, 4 to 10 carbon atoms. Specifically, for example, the amine compound is diethanolamine (DEA). ) Piperidine (PPD), 3-methylpiperidine, 4-methylpiperidine, pyrrolidine, 3-methylpyrrolidine (3- methylpyrrolidine, 3-methyl-1H-pyrrole, dicyclohexylamine, methylaniline, methylbenzylamine, imidazole, benzimidazole (benzimidazole), imidazolyl-4-ethanol (IME), amino ethyl piperazine (AEP), 1-(2-hydroxyethyl)piperazine (1-(2- hydroxyethyl)piperazine, HEP), piperazine (PPZ), 1-(2-hydroxyethyl)piperazine (1-(2-hydroxyethyl)piperazine), 1-(2-aminoethyl)piperazine (1- (2-aminoethyl)piperazine), 1-(2-hydroxyethyl)-4-methyl piperazine), N-(3-aminopropyl)morpholine (N It may contain one or more of -(3-aminopropyl)morpholine) and 2-methylpiperazine.

According to one embodiment, the tertiary amine compound is methyldiethanolamine (N-methyldiethanolamine), ethyldiethanolamine (N-ethyldiethanolamine), dimethylethanolamine (N,N-dimethylethanolamine), dimethylethylamine (N,N- dimethylethylamine), diethylmethylamine (N,N-diethylmethylamine), methylpiperidine (N-methylpiperidine), methylpyrole (N-methylpyrole), and methylpyrrolidine (1-methylpyrrolidine). .

According to one embodiment, the amine compound content of the present invention may be 0.1 to 30% by weight, for example, 0.5 to 20% by weight, or 0.5 to 10% by weight, or 0.5 to 5% by weight, based on the total weight of the composition. If the content of the amine compound is too small, the peeling performance of IGZO from the photoresist may deteriorate, so when the above range is satisfied, appropriate peeling performance can be achieved and corrosion of IGZO can be prevented.

organic solvent

The composition according to the present invention contains an organic solvent as an ingredient to easily peel off the photoresist and improve dissolving power. The composition of the present invention may contain two or more organic solvents, for example, one or more of an aprotic polar solvent and a protic organic solvent. Additionally, it may include, for example, amide compounds and glycols not containing nitrogen atoms.

According to one embodiment, the aprotic polar solvent may include a compound of Formula 3:

[Formula 3]

In the above formula, R ₃ , R ₄ and R ₅ are each independently H or C _1-2 alkyl.

As shown in Formula 3, an amide compound is a substance composed of less than 3 C when R ₃ , R ₄ or R ₅ is alkyl, and may also include a cyclic form. For example, in Formula 3, R ₃ , R ₄ or R ₅ C is 3 or more propylformamide (N-propylformamide), dipropylformamide (N,N-dipropylformamide), butylamide (N-butylamide) and Peeling performance can be improved when using the amide compound according to the present invention compared to the same compound.

Specifically, for example, aprotic polar solvents include N-methylacetamide, N,N-dimethylacetamide, acetamide, and N-ethylacetamide. -ethylacetamide), N,N-diethylacetamide, formamide, N-methylformamide, N,N-dimethylformamide ), N-ethylformamide, N,N-diethylformamide, N-methylpyrrolidone (NMP), N-ethylpyrrolidone ( It may contain one or more of N-ethylpyrrolidone (NEP).

According to one embodiment, the protic organic solvent is monoisopropyl ether, diethylene glycol monoisopropyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monoisopropyl ether, triethylene glycol mono. Butyl ether, polyethylene glycol, polypropylene glycol, polyethylene glycol monomethyl ether, polyethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate and tetramethylene glycol. It may contain one or more of hydrofurfuryl alcohol.

According to one embodiment, the nitrogen atom-free glycol in the protic organic solvent may include a compound of Formula 4:

[Formula 4]

HO-[(C _1-2 )alkyl -O] _n -X In the above formula,

n is an integer from 0 to 2,

X is H, OH or C _1-4 alkyl.

For example, in the case of compounds with five or more carbons (C) in a row, the conductivity is high, which increases the galvanic corrosion effect and increases the penetration of amines, which may cause damage to the metal. It may be desirable to include glycols with carbon atoms of 4 or less.

Specifically, glycols that do not contain nitrogen atoms include diethylene glycol monoethyl ether (EDG), diethylene glycol monomethyl ether (MDG), and diethylene glycol monobutyl ether (diethylene). glycol monobutyl ether, ethylene glycol (EG), diethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, metanediol , methoxymethanol, ethoxymethanol, 2-methoxyethanol, 2-ethoxyethanol, 2-(hydroxy methoxy)ethanol (2-( It may contain one or more of hydroxymethoxy)ethanol) and 2-methoxyethoxyethanol. Additionally, the type of organic solvent is not limited to the above, and commonly used solvents can be used.

According to one embodiment, the content of the organic solvent may be 40 to 99% by weight, for example, 60 to 99% by weight, or 70 to 99% by weight. Specifically, for example, the weight ratio of the aprotic polar solvent and the protic organic solvent in the organic solvent may be 1:0.1 to 1:5, for example, 1:0.2 to 1:3. Also, for example, based on the total weight of the composition, the content of the aprotic polar solvent may be 20 to 70% by weight, for example, 30 to 60% by weight or 35 to 60% by weight. Also, for example, the content of the protic organic solvent may be 20 to 70% by weight, or 30 to 70% by weight, or 40 to 60% by weight.

Corrosion inhibitor

The stripper composition according to the present invention contains a corrosion inhibitor to prevent corrosion of the substrate. Corrosion inhibitors play a role in suppressing damage to metals by preventing ionization of metals. According to one embodiment, the corrosion inhibitor of the present invention may include an azole-based compound, for example, a triazole-based compound. Specifically, for example, 4 ou(5)-Methyl-4,5,6,7-tetrahydro-1H-benzo[1,2,3]triazole, methyl-1H-benzotriazole, benzotriazole It may include (benzotriazole), aminotriazole, tolyltriazole, carboxybenzotriazole, chlorobenzotriazole, ethylbenzotriazole, etc. The content of the corrosion inhibitor may be 0.001 to 5% by weight, for example 0.01 to 3% by weight, or 0.1 to 2% by weight.

In one aspect, the present invention can provide a composition consisting of an amine compound and a protic organic solvent, wherein the amine compound includes an amine compound containing one nitrogen atom or an amine compound of Formula 1. Additionally, the present invention can provide a composition consisting of an amine compound, an aprotic polar solvent, and a protic organic solvent, and the amine compound includes an amine compound containing one nitrogen atom or an amine compound of Formula 1. According to the composition of the present invention, photoresist can be removed while preventing corrosion of the IGZO substrate.

According to one embodiment, the present invention does not include fluorine compounds. Because it does not contain fluorine compounds, excessive corrosion and overetching can be prevented during IGZO treatment.

According to another embodiment of the present invention, a semiconductor device manufactured using the stripper composition for IGZO substrates as described above can be provided.

According to one embodiment, the composition of the present invention may further include any additives used in conventional compositions to improve performance. For example, it may further include one or more selected from the group consisting of conventional stabilizers, surfactants, chelating agents, antioxidants, corrosion inhibitors, and mixtures thereof.

The stabilizer may be an etching stabilizer and may be included to suppress the generation of side reactions or by-products that may be caused by unnecessary reactions of the etching composition or the object to be etched.

Surfactants may be additionally added to improve the wettability of the composition, improve the foaming properties of the additive, and increase solubility in other organic additives. The surfactant may be added in an amount of 0.0005 to 5% by weight based on the total weight of the composition, one or more types selected from nonionic surfactants, anionic surfactants, cationic surfactants, and amphoteric surfactants. , preferably 0.001 to 2% by weight based on the total weight of the composition. If the surfactant content is less than 0.0005% by weight of the total weight of the composition, no effect can be expected, and if it is added in more than 5% by weight, solubility problems may occur or process problems may occur due to excessive foaming.

A chelating agent may be added to increase the solubility of metal impurities in the composition or to form a uniform etched surface. The chelating agent can be added in an amount of 0.1 to 5% by weight based on the total weight of the composition, and is preferably an organic acid having both a carboxyl group and a hydroxy group.

Hereinafter, embodiments of the present invention will be described in detail so that those skilled in the art can easily implement it. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein.

Example

A composition was prepared according to Table 1. The unit of content is weight%.

division Aprotic polar solvent amine compounds Protic organic solvent corrosion inhibitor type weight% type weight% type weight% type weight% Example 1 NEF 58 MEA 2 EDG 40 - - Example 2 NMF 40 MIPA 2 BDG 58 - - Example 3 NMF 45 AEE 3 EG 50.5 BTA 1.5 Example 4 NEF 48 MEA 2 EDG 49.5 TT 0.5 Example 5 NEF 39 PPD 2 EG 58.5 BTA 0.5 Example 6 NEF 50 AEE One DG 48.5 TT 0.5 Example 7 DMF 40 MEA 3 EG 56 BTA 1.0 Example 8 DMF 37 MIPA 3 MDG 59 TT 1.0 Example 9 DMF 47 HEP 2 EG 50.5 TT 0.5 Example 10 DEF 55 MEA 3 DG 40.5 BTA 1.5 Example 11 DEF 38 MIPA 3 MDG 58.5 BTA 0.5 Example 12 DEF 40 AEE 3 BDG 57 - -

<Aprotic polar solvent>

NMF: N-methylformamide

NEF: N-ethylformamide

DMF: dimethylformamide

DEF: diethylformamide

<Amine compound>

MEA: monoethanolamine

MIPA: monoisopropanolamine

AEE: 2-(2-aminoethoxy)ethanol

PPD: piperidine

HEP: 1-(2-hydroxyethyl)piperazine

<Protic organic solvent>

EDG: diethylene glycol monoethyl ether

BDG: diethylene glycol monobutyl ether

EG: ethylene glycol

MDG: diethylene glycol monomethyl ether

DG: diethylene glycol

<Corrosion inhibitor>

BTA: benzotriazole

TT: tolytriazole

Comparative example

A composition was prepared according to Table 1. The unit of content is weight%.

division organic solvent Amine compound glycol corrosion
preventer type weight% type weight% type weight% type weight% Comparative Example 1 NMF 44 EDAs One EDG 55 - - Comparative Example 2 NEF 50 DETA One BDG 49 - - Comparative Example 3 DEF 55 TEPA One MDG 44 - - Comparative Example 4 NEF 44 AEEA 1.5 EG 54.5 - - Comparative Example 5 NEF 44 DIPA 1.5 EG 54.5 - -

<Organic solvent>

NMF: N-methylformamide

NEF: N-ethylformamide

DEF: diethylformamide

<Amine compound>

EDA: ethylenediamine

DETA: diethylelenetriamine

TEPA: tetraethylenepentamine

AEEA: aminoethyletanolamine

DIPA: 1,2-diaminopropane

<Glycol>

EDG: diethylene glycol monoethyl ether

BDG: diethylene glycol monobutyl ether

MDG: diethylene glycol monomethyl ether

EG: ethylene glycol

Experimental Example 1: Evaluation of photoresist peel strength

For each stripper composition, the photoresist stripping power was evaluated.

After applying photoresist (AZEM, DTR-300) to a glass substrate to a thickness of 1.5㎛, test specimens were prepared by hard baking (H/B) at 160°C for 10 minutes. The time required for the photoresist to be completely peeled off by each stripper was measured under a spray pressure of 0.4 kgf using a single-wafer spray type stripping equipment maintained at a temperature of 50°C. The evaluation results are shown in Table 3. indicated. At this time, peeling of the photoresist was confirmed by irradiating ultraviolet rays on the glass substrate and observing whether the photoresist remained.

Experimental Example 2: Evaluation of solvent power

For each stripper composition, the photoresist dissolving power was evaluated.

Photoresist powder was prepared by drying the photoresist (AZEM, DTR-300) on a hot plate at 160°C for 4 hours. 2% by weight of dried photoresist powder was added to each stripper composition at a constant temperature of 50℃ and stirred for 20 minutes to dissolve it under 300rpm stirring conditions, followed by a 10 micro filter (PTFE with 10㎛ pores). was passed through to evaluate the dissolving power.

The weight percentage of the photoresist was set to 100% when it was completely dissolved within 20 minutes and the remaining amount could not be measured after filtering. This weight% value means that a larger amount of photoresist can be dissolved as the value increases, so it can be said that the higher the weight% value, the higher the number of photoresists to be processed. The evaluation results are shown in Table 3.

Solvent power can be calculated by the following equation.

[Equation 1]

Solvency (%) = [(Content of photoresist used in 2% by weight of solid content - Content of photoresist remaining in the filter)/Content of photoresist used in 2% by weight of solid content] Х 100

Experimental Example 3: Rinse power evaluation

For each stripper composition, the rinsing power from the substrate was evaluated.

The photoresist stripping process includes a final step of rinsing with water. Accordingly, since the stripping solution containing the photoresist remaining on the substrate must have good water exchangeability, an evaluation was conducted to confirm this.

The substrates soaked in each stripper for 1 minute were taken out and the stripper was overdried for 1 minute using an air knife. After rinsing the overdried substrate with water, the staining of the substrate was visually confirmed. The better the water exchangeability of the composition, the better the rinsing power and the weaker the staining strength.

The evaluation results of the rinsing power are shown in Table 3 below, and the evaluation criteria are as follows.

[Evaluation standard]

◎: Very good

○: Good

△: Staining occurs

X: Severe staining

Experimental Example 4: IGZO Etch Rate Evaluation

For each stripper composition, the etch rate from the substrate was evaluated.

Since IGZO Etch occurs when DI is incorporated, each stripper was evaluated by diluting it with 50% DI.

A substrate patterned with IGZO on glass was used, and was evaluated by dipping at 300 rpm for 15 minutes at a constant temperature of 50°C. Etch was confirmed by measuring the status before and after evaluation using an Alpha Step analysis device and confirming the difference.

division IGZO
Etch Rate(Å/min) Peel force (Sec) solvency(%) Rinse power Example 1 0 5 100 ◎ Example 2 0 8 100 ◎ Example 3 0 8 100 ◎ Example 4 0 5 100 ◎ Example 5 0 10 100 ◎ Example 6 0 10 100 ◎ Example 7 0 10 100 ◎ Example 8 0 10 100 ◎ Example 9 0 10 100 ◎ Example 10 0 10 100 ○ Example 11 0 10 100 ○ Example 12 0 10 100 ◎ Comparative Example 1 90 10 100 ◎ Comparative Example 2 80 10 100 ◎ Comparative Example 3 70 10 100 ◎ Comparative Example 4 22 10 100 ◎ Comparative Example 5 24 10 100 ◎

As shown in Table 3, it was confirmed that all compositions according to the examples had an IGZO etching rate of 0 Å/min, a peeling time of 5 to 10 sec, a dissolving power of 100%, and an excellent rinsing power. Therefore, the present invention is excellent in preventing damage to IGZO and peeling off photoresist.

On the other hand, it was confirmed that the compositions of the comparative example were not suitable as a stripper composition for IGZO because there was no composition that satisfied all of the metal damage, peeling power, and dissolving power.

As described above, it was confirmed that the stripper composition according to the present invention has excellent photoresist removal and dissolution performance while preventing damage to the IGZO substrate due to corrosion.

As the specific parts of the present invention have been described in detail above, it is clear to those skilled in the art that these specific techniques are merely preferred implementation examples and do not limit the scope of the present invention. do. Anyone skilled in the art to which the present invention pertains will be able to make various applications and modifications within the scope of the present invention based on the above contents. Accordingly, the actual scope of the present invention will be defined by the appended claims and their equivalents.

Claims (12)

Two or more organic solvents; and
Stripper composition for IGZO substrate, comprising an amine compound of Formula 1 or Formula 2:
[Formula 1]

In the above equation,
R ₁ is hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,
The alkyl or alkoxy may be straight or branched;
[Formula 2]

In the above equation,
X is N or C,
R ₂ is a hydrogen atom, hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,
The alkyl or alkoxy may be straight chain or branched. According to paragraph 1,
A stripper composition for an IGZO substrate, wherein the amine compound of Formula 1 includes one or more of monoethanol amine, amino propanol, and aminoethoxy ethanol. According to paragraph 1,
A stripper composition for an IGZO substrate, wherein the amine compound of Formula 2 includes one or more of hydroxyethyl piperazine and piperidine. According to paragraph 1,
A stripper composition for an IGZO substrate, wherein the two or more organic solvents include an aprotic polar solvent and a protic organic solvent. According to paragraph 4,
A stripper composition for an IGZO substrate, wherein the aprotic polar solvent includes a compound of formula 3:
[Formula 3]

In the above formula, R ₃ , R ₄ and R ₅ are each independently H or C _1-2 alkyl. According to paragraph 4,
The aprotic polar solvent is N-methylacetamide, N,N-dimethylacetamide, acetamide, N-ethylacetamide, N,N-diethylacetamide, formamide, N-methylformamide, N,N - A stripper composition for an IGZO substrate containing one or more of dimethylformamide, N-ethylformamide, N,N-diethylformamide, N-methylpyrrolidone, and N-ethylpyrrolidone. According to clause 4,
A stripper composition for an IGZO substrate, wherein the protic organic solvent includes a compound of formula 4:
[Formula 4]
HO-[(C _1-2 )alkyl - O] _n -X In the above formula,
n is an integer from 0 to 2,
X is H, OH or C _1-4 alkyl. According to paragraph 4,
The protic organic solvent is diethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, ethylene glycol, diethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methanediol, A stripper composition for an IGZO substrate, comprising one or more of oxymethanol, ethoxymethanol, methoxyethanol, ethoxyethanol, 2-(hydroxy methoxy)ethanol, and methoxy ethoxyethanol. According to paragraph 1,
A stripper composition for an IGZO substrate, further comprising an azole-based corrosion inhibitor. With respect to the total weight of the composition,
40 to 99% by weight of two or more organic solvents; and
Method for producing a stripper composition for an IGZO substrate, comprising mixing 0.1 to 30% by weight of an amine compound of Formula 1 or Formula 2:
[Formula 1]

In the above equation,
R ₁ is hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,
The alkyl or alkoxy may be straight or branched;
[Formula 2]

In the above equation,
X is N or C,
R ₂ is a hydrogen atom, hydroxy(C _1-6 )alkyl, or hydroxy(C _1-4 )alkoxy(C _1-4 )alkyl,
The alkyl or alkoxy may be straight chain or branched. According to clause 10,
A method for producing a stripper composition for an IGZO substrate, wherein the organic solvent includes an aprotic polar solvent and a protic organic solvent in a weight ratio of 1:0.1 to 1:5. A semiconductor device manufactured using the stripper composition for IGZO substrates according to claim 1.