CN107577121A - A kind of photoresist removes glue - Google Patents
A kind of photoresist removes glue Download PDFInfo
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- CN107577121A CN107577121A CN201710753705.4A CN201710753705A CN107577121A CN 107577121 A CN107577121 A CN 107577121A CN 201710753705 A CN201710753705 A CN 201710753705A CN 107577121 A CN107577121 A CN 107577121A
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- Prior art keywords
- photoresist
- glue
- removes glue
- alcohol
- photoresist according
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Abstract
The invention belongs to wafer fabrication techniques field, is related to a kind of photoresist and removes glue, and its formula includes：1 30wt% alcohols, 0.1 10wt% organic alcohol amines, 0.1 5wt% quaternary ammonium bases, 60 90wt% polar non-proton organic solvents and the deionized water for supplying surplus.The photoresist of the present invention goes glue not only to substantially increase remove photoresist speed and ability of removing photoresist, and reduces the corrosion to the various grounds such as metal, passivation layer, silica；It is water-soluble relatively good, easily cleaning of removing photoresist later.
Description
Technical field
The present invention relates to wafer fabrication techniques field, more particularly to a kind of effect of removing photoresist is good and attack to ground is less
Photoresist removes glue.
Background technology
Photoresist is also referred to as photoresist, is a kind of nonconducting light-sensitive material, and it passes through by characteristic meeting after illumination
The principle to change is by the pattern transfer on lithography mask version to wafer.Uncured photoresist needs to use after development
Go glue to wash off, expose ground and etched accordingly again.
To going for glue, it is most important that the selectivity to attacking material, that is to say, that go glue efficiently to remove
Photoresist, but can not have obvious corrosiveness to the various grounds such as metal, silicon, silica, passivation.
The present invention is just to provide for a kind of new removing glue to solve problem above.
The content of the invention
It is a primary object of the present invention to provide, a kind of effect of removing photoresist is good and the less photoresist of attack to ground removes photoresist
Liquid.
The present invention is achieved through the following technical solutions above-mentioned purpose：A kind of photoresist removes glue, and its formula includes：1-
30wt% alcohols, 0.1-10wt% organic alcohol amines, 0.1-5wt% quaternary ammonium bases, 60-90wt% polar non-proton organic solvents and
Supply the deionized water of surplus.
Specifically, the polar non-proton organic solvent is dimethyl sulfoxide, sulfolane, dimethyl sulfone, N, N- dimethyl methyls
Acid amides, DMA, 1-METHYLPYRROLIDONE, one in propylene carbonate, DMI
Kind.
Specifically, the organic alcohol amine is MEA, diethanol amine, triethanolamine, one kind of diglycolamine.
Specifically, described be formulated the reducing agent for also including 0.01-2wt%, the reducing agent is hydrazine hydrate, azanol or hydroxyl
One kind in amine salt.
Specifically, the alcohols is monohydric alcohol, dihydric alcohol or trihydroxylic alcohol.
Specifically, described be formulated the corrosion inhibitor for also including 0.1-5wt%, the corrosion inhibitor is azole, organic amine, amino
One kind in acid, thiocarbamide or organosilicate.
Using above-mentioned technical proposal, the beneficial effect of technical solution of the present invention is：
The photoresist of the present invention goes glue not only to substantially increase remove photoresist speed and ability of removing photoresist, and reduces to gold
The corrosion of the various grounds such as category, passivation layer, silica；It is water-soluble relatively good, easily cleaning of removing photoresist later.
Embodiment
The present invention is described in further detail with reference to specific embodiment.
A kind of photoresist removes glue, and its formula includes：1-30wt% alcohols, 0.1-10wt% organic alcohol amines, 0.1-5wt%
Quaternary ammonium base, 60-90wt% polar non-proton organic solvents and the deionized water for supplying surplus.
Embodiment 1~9：
According to the formula of table 1 in dustless laboratory, alcohols, organic alcohol amine, quaternary ammonium base (selectivity are sequentially added by proportioning
Ground add reducing agent), deionized water, polar non-proton organic solvent (being selectively added corrosion inhibitor), stir.
Table 1：
Unit：Wt%
Note：The part less than 100wt% is always matched in table 1 to supply with deionized water.
Glue is gone to be gone as reference examples with photoresist made from embodiment 1~9 using existing certain photoresist bought on the market
Glue is contrasted.
Detection method is：
1. experiment product photoresist removes photoresist, the time is 15min.Detected by light microscope (OM) on the surface of removing photoresist of experiment product；
2. ground test piece etching time is 60min.Ground corrosion rate is by four probe resistance rate measuring instrument (4-point
Probe) detect, or detected by ellipsometer (ellipsometer), or range estimation.
As a result it is as follows：
Table 2：
Unit：μm/min
From the test result shown in table 2 can be seen that the present invention photoresist go the speed of removing photoresist of glue substantially 19~
22 μm/min, far above 3.5 μm/min of reference examples；But this photoresist removes glue to the various grounds such as copper, passivation layer, silica
Corrosion efficiency it is very low.
It is water-soluble relatively good because adding a large amount of polar non-proton organic solvents in formula, remove photoresist later easily
Cleaning；And not only to copper, it is equally very low to other corrosion of metal efficiency.
Reducing agent and corrosion inhibitor go glue to add the corrosiveness of ground when being necessary for suppressing photoresist.
Above-described is only some embodiments of the present invention.For the person of ordinary skill of the art, not
On the premise of departing from the invention design, various modifications and improvements can be made, these belong to the protection model of the present invention
Enclose.
Claims (6)
1. a kind of photoresist removes glue, it is characterised in that formula includes：1-30wt% alcohols, 0.1-10wt% organic alcohol amines,
0.1-5wt% quaternary ammonium bases, 60-90wt% polar non-proton organic solvents and the deionized water for supplying surplus.
2. photoresist according to claim 1 removes glue, it is characterised in that：The polar non-proton organic solvent is diformazan
Sulfoxide, sulfolane, dimethyl sulfone, DMF, DMA, 1-METHYLPYRROLIDONE, carbonic acid third
One kind in diester, 1,3- dimethyl-2-imidazolinones.
3. photoresist according to claim 1 removes glue, it is characterised in that：The organic alcohol amine is MEA, diethyl
Hydramine, triethanolamine, one kind of diglycolamine.
4. photoresist according to claim 1 removes glue, it is characterised in that：The alcohols is monohydric alcohol, dihydric alcohol or three
First alcohol.
5. photoresist according to claim 1 removes glue, it is characterised in that：The formula going back also including 0.01-2wt%
Former agent, the reducing agent are one kind in hydrazine hydrate, azanol or hydroxylamine salt.
6. photoresist according to claim 1 removes glue, it is characterised in that：It is described to be formulated the resistance for also including 0.1-5wt%
Agent is lost, the corrosion inhibitor is one kind in azole, organic amine, amino acid, thiocarbamide or organosilicate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710753705.4A CN107577121A (en) | 2017-08-29 | 2017-08-29 | A kind of photoresist removes glue |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710753705.4A CN107577121A (en) | 2017-08-29 | 2017-08-29 | A kind of photoresist removes glue |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107577121A true CN107577121A (en) | 2018-01-12 |
Family
ID=61030308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710753705.4A Pending CN107577121A (en) | 2017-08-29 | 2017-08-29 | A kind of photoresist removes glue |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107577121A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445256A (en) * | 2018-12-14 | 2019-03-08 | 江苏艾森半导体材料股份有限公司 | Novel photoresist removes glue |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5846695A (en) * | 1996-04-12 | 1998-12-08 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit |
| CN102486620A (en) * | 2010-12-02 | 2012-06-06 | Ltc有限公司 | Composition of stripping solution for liquid crystal display process photoresist comprising primary alkanolamine |
| CN103838091A (en) * | 2012-11-22 | 2014-06-04 | 安集微电子科技(上海)有限公司 | Cleaning fluid for removing photoresist |
| US9012387B2 (en) * | 2007-08-15 | 2015-04-21 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
| CN105527802A (en) * | 2014-09-29 | 2016-04-27 | 安集微电子科技(上海)有限公司 | Photoresist cleaning fluid |
| CN106933068A (en) * | 2015-12-31 | 2017-07-07 | 安集微电子（上海）有限公司 | A kind of cleaning fluid of the removal photoetching glue residue of low etching |
| CN107085358A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | For removing the photoresist lift off liquid containing back chip metalization layer |
-
2017
- 2017-08-29 CN CN201710753705.4A patent/CN107577121A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5846695A (en) * | 1996-04-12 | 1998-12-08 | Mitsubishi Gas Chemical Company, Inc. | Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit |
| US9012387B2 (en) * | 2007-08-15 | 2015-04-21 | Dynaloy, Llc | Metal conservation with stripper solutions containing resorcinol |
| CN102486620A (en) * | 2010-12-02 | 2012-06-06 | Ltc有限公司 | Composition of stripping solution for liquid crystal display process photoresist comprising primary alkanolamine |
| CN103838091A (en) * | 2012-11-22 | 2014-06-04 | 安集微电子科技(上海)有限公司 | Cleaning fluid for removing photoresist |
| CN105527802A (en) * | 2014-09-29 | 2016-04-27 | 安集微电子科技(上海)有限公司 | Photoresist cleaning fluid |
| CN106933068A (en) * | 2015-12-31 | 2017-07-07 | 安集微电子（上海）有限公司 | A kind of cleaning fluid of the removal photoetching glue residue of low etching |
| CN107085358A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | For removing the photoresist lift off liquid containing back chip metalization layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109445256A (en) * | 2018-12-14 | 2019-03-08 | 江苏艾森半导体材料股份有限公司 | Novel photoresist removes glue |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 215000 1647 Huangpu Road, Qian Deng Town, Kunshan City, Suzhou, Jiangsu Applicant after: Jiangsu Essen semiconductor materials Limited by Share Ltd Address before: 215000 1647 Huangpu Road, Qian Deng Town, Kunshan City, Suzhou, Jiangsu Applicant before: ASEM (Suzhou) Electronic Material Co., Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180112 |
|
| RJ01 | Rejection of invention patent application after publication |