CN107037698A - A kind of photoresist lift off liquid - Google Patents
A kind of photoresist lift off liquid Download PDFInfo
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- CN107037698A CN107037698A CN201710404918.6A CN201710404918A CN107037698A CN 107037698 A CN107037698 A CN 107037698A CN 201710404918 A CN201710404918 A CN 201710404918A CN 107037698 A CN107037698 A CN 107037698A
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- Prior art keywords
- photoresist lift
- liquid
- liquid according
- ether
- photoresist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of photoresist lift off liquid, it is made up of organic amine, polar organic solvent and additive, wherein, the percentage by weight of various compositions is：Organic amine 1 is to 10wt%；Polar organic solvent 85 is to 98.9wt%；Additive 0.1 is to 5wt%.The photoresist lift off liquid is connected up for molybdenum (Mo), copper (Cu), aluminium (Al) and the anticorrosive property of other metal lines is excellent, peeling effect is good, service life is long.In addition, it is prepared simply, it is easy to operate.
Description
Technical field
The invention belongs to technical field of lithography, it is related to a kind of stripper, and in particular to a kind of photoresist lift off liquid.
Background technology
Electronics industry is developed rapidly, and photoresist application is also more and more extensive.In semiconductor components and devices manufacturing process, pass through
After coating-development-etching process, lines needed for being etched on underlying metal material, it is necessary to removing residual photoresist
Any base material can not be damaged simultaneously, next procedure could be carried out again.Therefore, the stripping quality of photoresist also directly affects product
Quality.
Current photoresist lift off liquid is general with alkali (organic base, inorganic base), polar organic solvent, corrosion inhibiter and/or water
Composition.Alkali used in conventional water system stripper includes inorganic base, such as NaOH, KOH 2~6% solution, with alkaline strong, stripping
The advantages of fast from speed.But meeting Eroded metal base, makes metal wire occur corrosion fracture.Secondly, NaOH, KOH is shelled
Although chaotropic in use, photoresist can be made to be peeled off from substrate, can not be dissolved, the film slag after stripping is excessive well, difficult
, will blocking pipeline when recycling to filter.For example the A of patent CN 105116696 disclose a kind of water system photoresist
Stripper, its composition is inorganic base, organic base, organic solvent, corrosion inhibiter, alkali metal salt, high molecular polymer, chelating agent and gone
Ionized water.It is uniform solution at room temperature, solution can be layered at service temperatures, take out the glued membrane stripped down by circulating pump
Walk, though will not blocking pipeline, under high temperature, basic conditions, the erosion to metal base is too serious.In another example patent CN
104570628A discloses a kind of photoresist lift off liquid of low etching, comprising quaternary ammonium hydroxide, hydramine, solvent, with pigment
The star copolymer of adsorption group and the silane of specific structure.Its raw material is rare, and economy is not strong.
Therefore, this area needs a kind of peeling effect is good, do not damage base material, prepare photoresist simple, easy to use to shell
Chaotropic.
The content of the invention
The invention aims to overcome the deficiencies in the prior art, it is desirable to provide a kind of photoresist lift off liquid, its for
Molybdenum (Mo), copper (Cu), aluminium (Al) are connected up and the anticorrosive property of other metal lines is excellent, peeling effect is good, service life is long；
In addition, it is prepared simply, it is easy to operate.
To achieve these goals, the present invention provides following technical scheme：
A kind of photoresist lift off liquid, it is characterised in that be made up of organic amine, polar organic solvent and additive, wherein, respectively
The percentage by weight of kind of composition is：
Organic amine 1 is to 10wt%；
Polar organic solvent 85 is to 98.9wt%；
Additive 0.1 is to 5wt%.
Further, wherein, the organic amine include hydramine.
Further, wherein, the hydramine be selected from monoethanolamine, diethanol amine, N methyldiethanol amine, N, N- bis-
At least one of methylethanolamine, triethanolamine, isopropanolamine, diisopropanolamine (DIPA), triisopropanolamine.
In addition, wherein, the polar organic solvent is selected from least one of amide-type and alcohol ethers.
Further, wherein, the amide-type be selected from N-METHYLFORMAMIDE, DMF, N- methyl pyrroles
At least one of pyrrolidone.
Further, wherein, the alcohol ethers be selected from ethylene glycol monobutyl ether, ethylene glycol ethyl ether, diethylene glycol ether,
At least one of diethylene glycol dimethyl ether, butyl, diethylene glycol dimethyl ether, triethylene glycol butyl ether.
On the other hand, wherein, the additive include azole compounds.
Further, wherein, the azole compounds be selected from BTA, 2-mercaptobenzothiazole, methyl benzo
At least one of triazole, triphenyltetrazolium chloride, 2,5- dimercaptothiodiazoles, imidazoles, pyrazoles, Aminotetrazole.
With existing photoresist lift off liquid phase ratio, photoresist lift off liquid of the invention has following advantageous effects：
1st, it is prepared simply, and peeling effect is good.
2nd, it is excellent for the anticorrosive property of molybdenum (Mo), copper (Cu), aluminium (Al) wiring and other metal lines.
3rd, its service life is long.
Embodiment
With reference to embodiment, the present invention is further described, and the content of embodiment is not as to protection scope of the present invention
Limitation.
In general, current photoresist lift off liquid is all by alkali (organic base, inorganic base), polar organic solvent, addition
Agent and/or water composition.In the system, dissolving of the alkali to photoresist, which is peeled off, plays main function, and the content of alkali is also directly affected
The peeling effect of photoresist.Inorganic base dissolubility extreme difference in most of organic solvents, selects specific organic solvent meeting again
Cause the peeling effect of photoresist bad, and the aqueous solution of inorganic base again can Eroded metal level, influence stripping quality.Cause
This, the present invention is coordinated from organic amine and polar organic solvent, according to " polarity is similar to mix " principle, and compatibility is very therebetween
It is good, it is ensured that to peel off quality.Likewise, being found by many experiments, two or more organic amine is organic molten with polarity
Agent is used cooperatively, and has a more preferable peeling effect, and the effect of additive is exactly to not corrode metal line.
Therefore, photoresist lift off liquid of the invention is made up of organic amine, polar organic solvent and additive.Wherein, it is organic
Amine is selected from least one of MEA, DEA, MDEA, IPA, DIPA, N, N- dimethylethanolamines, triethanolamine, triisopropanolamine.
Organic solvent is unrestricted, preferably polar organic solvent.More preferably alcohol ethers and amide-type.Additive preferably contains
Nitrogen compound, coordinates with organic amine and organic solvent, will not both corrode metal line, peeling effect is not interfered with again.
And the present invention is non-water system photoresist lift off liquid, non-water system photoresist lift off fluidity volatile relative to water
Energy can be more stable, and service life can be longer.
In the photoresist lift off liquid of the present invention, the example of used hydramine includes monoethanolamine
(monoethanolamine, MEA), diethanol amine (diethanolamine, DEA), N methyldiethanol amine (N-
Methyldiethanolamine, MDEA), N, N- dimethylethanolamines (N, N-dimethylethanolamine), three ethanol
Amine (triethanolamine, TEA), isopropanolamine (iso-propanol amine, IPA) diisopropanolamine (DIPA)
(diisopropanolamine, DIPA), triisopropanolamine (triisopropanolamine) and its mixture.Meanwhile,
In the present invention, the ratio of hydramine accounts for 1 to 10 weight % (wt%) with total restatement of photoresist lift off liquid.
Furthermore, polar organic solvent used in the present invention is unrestricted, preferably at least one of amide-type and alcohol ethers.
Also, the amide-type may be selected from N-METHYLFORMAMIDE (N-methylformamide, NMF), DMF (N,
N-dimethylformamide, DMF), 1-METHYLPYRROLIDONE (N-methyl pyrrolidone, NMP), such material pair
Also there is certain promotion in the stripping of photoresist.
Alcohol ethers include ethylene glycol monobutyl ether (ethylene glycol monobutyl ether), ethylene glycol ethyl ether
(ethylene glycol monomethylether), diethylene glycol ether (diethylene glycol
Diethylether), diethylene glycol dimethyl ether (diethylene glycol monomethyl ether), butyl
(diethylene glycol monobutyl ether, DGBE), diethylene glycol dimethyl ether (diethylene glycol
Dimethyl ether), triethylene glycol butyl ether (triethylene glycol monobuthyl ether) and its mixing
Thing.
Meanwhile, wherein, the ratio of polar organic solvent accounts for 85 to 98.9 weight % with total restatement of photoresist lift off liquid
(wt%).
In addition, additive used in the present invention includes nitrogen-containing compound, preferably azole compounds (azole).And azole
The example of compound includes BTA (benzotriazole, BTA), 2-mercaptobenzothiazole (2-
Mercaptobenzothiazole, MBT), methyl benzotriazazole (tolyltriazole, TTA), triphenyltetrazolium chloride
(triphenyltetrazolium chloride, TTC), 2,5- dimercaptothiodiazoles (2,5-Dimercapto-1,3,4-
Thiadiazole, DMTDA), imidazoles, pyrazoles, Aminotetrazole (aminotetrazole) and its mixture.Meanwhile, it is nitrogenous
The ratio of compound accounts for 0.1 to 5 weight % (wt%) with total restatement of photoresist lift off liquid.
The photoresist lift off liquid and preparation method thereof that the present invention is provided is simple, only need to be at room temperature by various groups of corresponding parts by weight
Divide well mixed.
Meanwhile, the photoresist lift off liquid of the invention peeling effect under 40-55 DEG C of temperature in use is good, while not corroding molybdenum
(Mo), copper (Cu), aluminium (Al) wiring and other metal lines.Specifically used method is：By ito glass in photoresist lift off liquid
The middle immersion suitable time, such as 1-2 minutes, take out after rinsing, dried up with high pure nitrogen.
Below, the present invention is further described by some embodiments, but the present invention is not limited to the following example
In embodiment.
Wherein, zero：Cleaning performance is good, does not damage base material；×：Photoresist is not cleaned up；△：Damage base material.
From above-described embodiment, using the raw material and its photoresist lift off liquid of percentage by weight of the present invention, its photoetching
Glue elimination effect is good, and does not damage base material.
The above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not to the present invention
Embodiment restriction.For those of ordinary skill in the field, it can also make on the basis of the above description
Other various forms of changes or variation.Here all embodiments can not be exhaustive.Every skill for belonging to the present invention
Row of the obvious changes or variations that art scheme is extended out still in protection scope of the present invention.
Claims (8)
1. a kind of photoresist lift off liquid, it is characterised in that be made up of organic amine, polar organic solvent and additive, wherein, it is various
The percentage by weight of composition is：
Organic amine 1 is to 10wt%；
Polar organic solvent 85 is to 98.9wt%；
Additive 0.1 is to 5wt%.
2. photoresist lift off liquid according to claim 1, it is characterised in that the organic amine includes hydramine.
3. photoresist lift off liquid according to claim 2, it is characterised in that the hydramine is selected from monoethanolamine, diethyl
Hydramine, N methyldiethanol amine, N, N- dimethylethanolamines, triethanolamine, isopropanolamine, diisopropanolamine (DIPA), triisopropanolamine
At least one of.
4. photoresist lift off liquid according to claim 1, it is characterised in that the polar organic solvent is selected from amide-type
At least one of with alcohol ethers.
5. photoresist lift off liquid according to claim 4, it is characterised in that the amide-type is selected from N- methyl formyls
At least one of amine, N,N-dimethylformamide, 1-METHYLPYRROLIDONE.
6. photoresist lift off liquid according to claim 4, it is characterised in that the alcohol ethers are selected from ethylene glycol only son
Ether, ethylene glycol ethyl ether, diethylene glycol ether, diethylene glycol dimethyl ether, butyl, diethylene glycol dimethyl ether, triethylene glycol fourth
At least one of ether.
7. photoresist lift off liquid according to claim 1, it is characterised in that the additive includes azole compounds.
8. photoresist lift off liquid according to claim 7, it is characterised in that the azole compounds are selected from the nitrogen of benzo three
Azoles, 2-mercaptobenzothiazole, methyl benzotriazazole, triphenyltetrazolium chloride, 2,5- dimercaptothiodiazoles, imidazoles, pyrazoles, ammonia
At least one of base tetrazolium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404918.6A CN107037698B (en) | 2017-06-01 | 2017-06-01 | Photoresist stripping liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710404918.6A CN107037698B (en) | 2017-06-01 | 2017-06-01 | Photoresist stripping liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107037698A true CN107037698A (en) | 2017-08-11 |
| CN107037698B CN107037698B (en) | 2020-05-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710404918.6A Active CN107037698B (en) | 2017-06-01 | 2017-06-01 | Photoresist stripping liquid |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108828910A (en) * | 2018-06-21 | 2018-11-16 | 深圳达诚清洗剂有限公司 | A kind of positive photoresist cleaning combination and preparation method thereof |
| CN112731777A (en) * | 2020-12-17 | 2021-04-30 | 芯越微电子材料(嘉兴)有限公司 | Photoresist stripping liquid suitable for semiconductor integrated circuit and preparation method thereof |
| CN113589661A (en) * | 2021-07-29 | 2021-11-02 | 江阴江化微电子材料股份有限公司 | Photoresist stripping liquid and stripping process |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104317172A (en) * | 2014-09-30 | 2015-01-28 | 深圳新宙邦科技股份有限公司 | Stripper for stripping photoresist |
-
2017
- 2017-06-01 CN CN201710404918.6A patent/CN107037698B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104317172A (en) * | 2014-09-30 | 2015-01-28 | 深圳新宙邦科技股份有限公司 | Stripper for stripping photoresist |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108828910A (en) * | 2018-06-21 | 2018-11-16 | 深圳达诚清洗剂有限公司 | A kind of positive photoresist cleaning combination and preparation method thereof |
| CN112731777A (en) * | 2020-12-17 | 2021-04-30 | 芯越微电子材料(嘉兴)有限公司 | Photoresist stripping liquid suitable for semiconductor integrated circuit and preparation method thereof |
| CN113589661A (en) * | 2021-07-29 | 2021-11-02 | 江阴江化微电子材料股份有限公司 | Photoresist stripping liquid and stripping process |
| CN113589661B (en) * | 2021-07-29 | 2024-03-08 | 江阴江化微电子材料股份有限公司 | Photoresist stripping liquid and stripping process |
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| Publication number | Publication date |
|---|---|
| CN107037698B (en) | 2020-05-22 |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20180202 Address after: 518000 Guangdong Shenzhen city Baoan District Songgang Street Yan Chuan community Ring Road No. 54 Applicant after: Shenzhen Dacheng cleaning agent Co., Ltd. Address before: 523378 Guangdong province Dongguan City Chashan Nanshe village of Castle Peak Road dry pit Applicant before: Dongguan Dacheng display material Co., Ltd. |
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Effective date of registration: 20190327 Address after: 516265 West of Maintenance Workshop of McCort Science and Technology Industrial Park, Weilong Management Zone, Liangjing Town, Huiyang District, Huizhou City, Guangdong Province Applicant after: Huizhou Dacheng Microelectronic Materials Co., Ltd. Address before: 518000 No. 54 Huansheng Avenue, Yanchuan Community, Songgang Street, Baoan District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Dacheng cleaning agent Co., Ltd. |
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