CN112540515B - Photoresist photoresist stripping solution and preparation method and application thereof - Google Patents
Photoresist photoresist stripping solution and preparation method and application thereof Download PDFInfo
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- CN112540515B CN112540515B CN202011486530.3A CN202011486530A CN112540515B CN 112540515 B CN112540515 B CN 112540515B CN 202011486530 A CN202011486530 A CN 202011486530A CN 112540515 B CN112540515 B CN 112540515B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 84
- 238000002360 preparation method Methods 0.000 title abstract description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 230000007797 corrosion Effects 0.000 claims abstract description 26
- 238000005260 corrosion Methods 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- -1 alcohol amine Chemical class 0.000 claims abstract description 16
- 239000003223 protective agent Substances 0.000 claims abstract description 16
- 239000003112 inhibitor Substances 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 14
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 claims description 5
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 4
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 3
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 3
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 claims description 2
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 claims description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 claims description 2
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 2
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 claims description 2
- NHBRUUFBSBSTHM-UHFFFAOYSA-N n'-[2-(3-trimethoxysilylpropylamino)ethyl]ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCNCCN NHBRUUFBSBSTHM-UHFFFAOYSA-N 0.000 claims description 2
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 238000002161 passivation Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 239000002994 raw material Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000003670 easy-to-clean Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 2
- 229920001174 Diethylhydroxylamine Polymers 0.000 description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 2
- 235000018417 cysteine Nutrition 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229960003540 oxyquinoline Drugs 0.000 description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- GRNRCQKEBXQLAA-UHFFFAOYSA-M triethyl(2-hydroxyethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCO GRNRCQKEBXQLAA-UHFFFAOYSA-M 0.000 description 2
- FPZXQVCYHDMIIA-UHFFFAOYSA-N 1,1-diphenylthiourea Chemical compound C=1C=CC=CC=1N(C(=S)N)C1=CC=CC=C1 FPZXQVCYHDMIIA-UHFFFAOYSA-N 0.000 description 1
- BIGYLAKFCGVRAN-UHFFFAOYSA-N 1,3,4-thiadiazolidine-2,5-dithione Chemical compound S=C1NNC(=S)S1 BIGYLAKFCGVRAN-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- IMQLKJBTEOYOSI-GPIVLXJGSA-N Inositol-hexakisphosphate Chemical compound OP(O)(=O)O[C@H]1[C@H](OP(O)(O)=O)[C@@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@H](OP(O)(O)=O)[C@@H]1OP(O)(O)=O IMQLKJBTEOYOSI-GPIVLXJGSA-N 0.000 description 1
- IMQLKJBTEOYOSI-UHFFFAOYSA-N Phytic acid Natural products OP(O)(=O)OC1C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C(OP(O)(O)=O)C1OP(O)(O)=O IMQLKJBTEOYOSI-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- NDKBVBUGCNGSJJ-UHFFFAOYSA-M benzyltrimethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)CC1=CC=CC=C1 NDKBVBUGCNGSJJ-UHFFFAOYSA-M 0.000 description 1
- IJRVQAXSAHHCNH-UHFFFAOYSA-M butyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(C)C IJRVQAXSAHHCNH-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- JQDCIBMGKCMHQV-UHFFFAOYSA-M diethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)CC JQDCIBMGKCMHQV-UHFFFAOYSA-M 0.000 description 1
- FVCOIAYSJZGECG-UHFFFAOYSA-N diethylhydroxylamine Chemical compound CCN(O)CC FVCOIAYSJZGECG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- BRWIZMBXBAOCCF-UHFFFAOYSA-N hydrazinecarbothioamide Chemical compound NNC(N)=S BRWIZMBXBAOCCF-UHFFFAOYSA-N 0.000 description 1
- ZIXWTPREILQLAC-UHFFFAOYSA-N isoquinolin-8-ol Chemical compound C1=NC=C2C(O)=CC=CC2=C1 ZIXWTPREILQLAC-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229940068041 phytic acid Drugs 0.000 description 1
- 235000002949 phytic acid Nutrition 0.000 description 1
- 239000000467 phytic acid Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- ZEMGGZBWXRYJHK-UHFFFAOYSA-N thiouracil Chemical compound O=C1C=CNC(=S)N1 ZEMGGZBWXRYJHK-UHFFFAOYSA-N 0.000 description 1
- QVOFCQBZXGLNAA-UHFFFAOYSA-M tributyl(methyl)azanium;hydroxide Chemical compound [OH-].CCCC[N+](C)(CCCC)CCCC QVOFCQBZXGLNAA-UHFFFAOYSA-M 0.000 description 1
- DWBDUFAECGEQOS-UHFFFAOYSA-M triethyl(3-hydroxypropyl)azanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CCCO DWBDUFAECGEQOS-UHFFFAOYSA-M 0.000 description 1
- HADKRTWCOYPCPH-UHFFFAOYSA-M trimethylphenylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C1=CC=CC=C1 HADKRTWCOYPCPH-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
- G03F7/327—Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a photoresist stripping solution, a preparation method and application thereof, wherein the photoresist stripping solution comprises, by weight, 0.5-10 parts of quaternary ammonium hydroxide, 65-85 parts of an organic solvent, 1-20 parts of an organic alcohol amine, 0.1-5 parts of an organic alcohol, 0.01-5 parts of a metal protective agent and 0.1-5 parts of an corrosion inhibitor. The photoresist stripping solution provided by the invention has the advantages of high photoresist stripping speed, strong photoresist stripping capability, capability of maintaining the photoresist stripping performance at a lower temperature, reduced corrosion to various substrates such as metal, silicon oxide, passivation and the like, prolonged working time, good water solubility and easiness in cleaning.
Description
Technical Field
The invention belongs to the field of semiconductor manufacturing, and particularly relates to photoresist stripping liquid, a preparation method and application thereof, in particular to photoresist stripping liquid with strong stripping capability, and a preparation method and application thereof.
Background
Photoresists, also known as photoresists, are a type of non-conductive, photosensitive material that transfers a pattern from a lithographic reticle to a wafer by the principle that the characteristics change upon exposure to light. After development, the uncured photoresist is washed away with photoresist stripping solution, and the substrate is exposed and etched accordingly. Most of photoresist stripping solutions in the current market have the problems of low photoresist stripping speed, residual photoresist and corrosion to metal or damage to passivation layers after long-time working.
CN107577121a discloses a photoresist stripping solution, the formulation of which comprises: 1-30wt% of alcohols, 0.1-10wt% of organic alcohol amine, 0.1-5wt% of quaternary ammonium base, 60-90wt% of polar aprotic organic solvent and the balance of deionized water. The photoresist stripping liquid of the invention not only greatly improves the stripping speed and the stripping capacity, but also reduces the corrosion to various substrates such as metal, passivation layer, silicon oxide and the like; the water solubility is relatively good, and the photoresist is easy to clean after photoresist removal. However, the composition of the corrosion inhibitor does not contain the corrosion inhibitor and the metal protective agent, and certain corrosion to the substrate still exists.
CN107346095a discloses a photoresist stripper for semiconductor Cheng Zhengxing, which comprises alkanolamine, metal corrosion inhibitor, water-miscible polar organic solvent, additive and water, wherein the additive is low-carbon nitroalkane and its derivative, and the carbon number of the low-carbon nitroalkane is 1-3. The photoresist stripping solution of the semiconductor Cheng Zhengxing can rapidly remove the positive photoresist layer, the solubility of the photoresist in the photoresist stripping solution is increased, the photoresist residue does not exist on the surface of the processed semiconductor, and the aluminum layer or the copper-aluminum alloy layer below the photoresist is not corroded.
The photoresist stripping solution in the current market has the problems of low photoresist stripping speed, residual photoresist and metal corrosion. Therefore, how to provide a photoresist removing solution with high photoresist removing speed, no residue and no corrosion to metals becomes a problem to be solved urgently.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide photoresist stripping solution, a preparation method and application thereof, in particular to photoresist stripping solution with strong photoresist stripping capability, and a preparation method and application thereof. The photoresist stripping solution provided by the invention has the advantages of high photoresist stripping speed, strong photoresist stripping capability, capability of maintaining the photoresist stripping performance at a lower temperature, reduced corrosion to various substrates such as metal, silicon oxide, passivation and the like, prolonged working time, good water solubility and easiness in cleaning.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
in a first aspect, the invention provides a photoresist stripping solution, which comprises, by weight, 0.5-10 parts of quaternary ammonium hydroxide, 65-85 parts of an organic solvent, 1-20 parts of an organic alcohol amine, 0.1-5 parts of an organic alcohol, 0.01-5 parts of a metal protective agent and 0.1-5 parts of an corrosion inhibitor.
Wherein the quaternary ammonium hydroxide may be 0.5 part, 1 part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts or 10 parts, etc., the organic solvent may be 65 parts, 66 parts, 67 parts, 68 parts, 69 parts, 70 parts, 71 parts, 72 parts, 73 parts, 74 parts, 75 parts, 76 parts, 77 parts, 78 parts, 79 parts, 80 parts, 81 parts, 82 parts, 83 parts, 84 parts or 85 parts, etc., the organic alcohol amine may be 1 part, 3 parts, 5 parts, 7 parts, 9 parts, 11 parts, 13 parts, 15 parts, 17 parts or 20 parts, etc., the organic alcohol may be 0.1 part, 0.2 parts, 0.3 parts, 0.5 parts, 1 part, 2 parts, 3 parts, 4 parts or 5 parts, etc., the metal protectant may be 0.01 parts, 0.02 parts, 0.03 parts, 0.05 parts, 0.1 part, 3.5 parts, 2.3 parts, 5 parts, etc., the same may not be in the range of 1.1, 3.5 parts, 2.5 parts, etc., the etchant may not be in the range of the above, or the other ranges.
The photoresist stripping solution with the specific proportion reduces the corrosion of the photoresist stripping solution to the base material by utilizing the synergistic effect of the metal protective agent and the corrosion inhibitor, and prolongs the working time; meanwhile, the adhesive has higher block adhesive removing speed and stronger adhesive removing capacity, can keep the adhesive removing performance at lower temperature, has good water solubility and is easy to clean.
Preferably, the photoresist stripping solution comprises, by weight, 2-8 parts of quaternary ammonium hydroxide, 70-80 parts of an organic solvent, 5-15 parts of an organic alcohol amine, 1-4 parts of an organic alcohol, 1-4 parts of a metal protective agent and 1-4 parts of an anticorrosive agent.
Preferably, the quaternary ammonium hydroxide includes any one or a combination of at least two of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, methylttripropylammonium hydroxide, butyltrimethylammonium hydroxide, methyltributylammonium hydroxide, (2-hydroxyethyl) trimethylammonium hydroxide, (2-hydroxyethyl) triethylammonium hydroxide, (3-hydroxypropyl) triethylammonium hydroxide, tetraethylammonium hydroxide, phenyltrimethylammonium hydroxide, or benzyltrimethylammonium hydroxide, for example, a combination of tetramethylammonium hydroxide and tetrapropylammonium hydroxide, a combination of tetramethylammonium hydroxide and tetraethylammonium hydroxide, or a combination of (2-hydroxyethyl) triethylammonium hydroxide and methylttripropylammonium hydroxide, etc., but not limited to the above-listed combinations, other combinations not listed within the above-listed combinations are equally applicable, and a combination of tetramethylammonium hydroxide and tetrapropylammonium hydroxide is preferred.
The quaternary ammonium hydroxide can dissolve photoresist into the photoresist stripping solution to play a role in removing the photoresist.
Preferably, the organic solvent includes any one or a combination of at least two of N-methylpyrrolidone, dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, or diethylene glycol monobutyl ether, for example, a combination of N-methylpyrrolidone and dimethyl sulfoxide, a combination of ethylene glycol monobutyl ether and ethylene glycol monomethyl ether, or a combination of N, N-dimethylacetamide and diethylene glycol monobutyl ether, etc., but is not limited to the above-listed combinations, and other non-listed combinations within the above-listed combinations are equally applicable, preferably dimethyl sulfoxide.
The organic solvent can strip the photoresist from the substrate and dissolve the photoresist together with the quaternary ammonium hydroxide.
Preferably, the organic alcohol amine includes any one or a combination of at least two of monoethanolamine, diethanolamine, triethanolamine or diglycolamine, for example, a combination of monoethanolamine and diethanolamine, a combination of monoethanolamine and triethanolamine, or a combination of triethanolamine and diglycolamine, etc., but is not limited to the above-listed combinations, and other non-listed combinations within the above-listed combinations are equally applicable.
Preferably, the organic alcohol includes any one or a combination of at least two of monohydric alcohol, dihydric alcohol or trihydric alcohol, for example, a combination of monohydric alcohol and dihydric alcohol, a combination of monohydric alcohol and trihydric alcohol or a combination of dihydric alcohol and trihydric alcohol, etc., but is not limited to the above-listed combinations, and other non-listed combinations within the above-listed combinations are equally applicable, and dihydric alcohol is preferred.
Preferably, the monohydric alcohol includes any one or a combination of at least two of ethanol, isopropanol or 3-methyl-3-methoxy-1-butanol, for example, a combination of ethanol and isopropanol, a combination of isopropanol and 3-methyl-3-methoxy-1-butanol, or a combination of ethanol and 3-methyl-3-methoxy-1-butanol, etc., but not limited to the above-listed combinations, and other non-listed combinations within the above-listed combinations are equally applicable.
Preferably, the glycol comprises ethylene glycol and/or propylene glycol.
Preferably, the triol comprises glycerol.
Preferably, the metal protecting agent includes an organosilane compound including any one or a combination of at least two of 3-aminopropyl trimethoxysilane, (3-aminopropyl) triethoxysilane, diethylenetriaminopropyl trimethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, n-octyltrimethoxysilane, n-decyltrimethoxysilane, methacryloxypropyl trimethoxysilane, γ -aminopropyl methyldiethoxysilane, γ -aminopropyl methyldimethoxysilane, γ -mercaptopropyl trimethoxysilane or γ -methacryloxypropyl trimethoxysilane, for example, a combination of 3-aminopropyl trimethoxysilane and (3-aminopropyl) triethoxysilane, a combination of phenyltrimethoxysilane and phenyltriethoxysilane, or a combination of γ -methacryloxypropyl trimethoxysilane and 3-aminopropyl trimethoxysilane, but the combinations listed above are not limited thereto, and other combinations not listed in the above-mentioned combination range are equally applicable, preferably 3-aminopropyl trimethoxysilane.
The organosilane compound can effectively protect the metal on the surface of the substrate from being corroded by the photoresist stripping solution.
Preferably, the corrosion inhibitor includes any one or a combination of at least two of benzotriazole, benzimidazole, 3-amino-1, 2, 4-triazole, 5-phenyltetrazole, 5-amino-1H-tetrazole, imidazole, 2-ethyl-4-methylimidazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2, 5-dimercaptothiadiazole, N-diethylhydroxylamine, cysteine, thiosemicarbazide, N-diphenylthiourea, 2-thiouracil, ethyl silicate, 8-hydroxyquinoline, 8-hydroxyisoquinoline, thiomalic acid, gallic acid, phytic acid or catechol, for example, a combination of benzotriazole and benzimidazole, a combination of imidazole and N, N-diethylhydroxylamine or a combination of cysteine and 8-hydroxyquinoline, etc., but not limited to the above-listed combinations, other non-listed combinations within the above range are equally applicable, and preferably a combination of benzotriazole and benzimidazole.
The corrosion inhibitor can reduce the corrosion of the photoresist stripping solution to the substrate, and can cooperate with the metal protective agent to protect the substrate, thereby prolonging the working time.
In a second aspect, the present invention provides a method for preparing a photoresist stripper as described above, the method comprising the steps of: and dissolving quaternary ammonium hydroxide, organic alcohol amine, organic alcohol, metal protective agent and corrosion inhibitor in an organic solvent to obtain the photoresist stripping solution.
In a third aspect, the present invention also provides the use of a photoresist stripper as described above in semiconductor package or wafer fabrication.
Compared with the prior art, the invention has the following beneficial effects:
the photoresist stripping solution is prepared by selecting specific raw materials, and the photoresist stripping solution reduces the corrosion of the photoresist stripping solution to a substrate by utilizing the synergistic effect of a metal protective agent and an corrosion inhibitor, so that the working time is prolonged; meanwhile, the adhesive has higher block adhesive removing speed and stronger adhesive removing capacity, can keep the adhesive removing performance at lower temperature, has good water solubility and is easy to clean.
Detailed Description
In order to further describe the technical means adopted by the present invention and the effects thereof, the following describes the technical scheme of the present invention in combination with the preferred embodiments of the present invention, but the present invention is not limited to the scope of the embodiments.
All the starting materials in the following examples and comparative examples are commercially available.
The raw materials and their code numbers used in the following examples and comparative examples are as follows:
the compositions and proportions of the examples and the comparative examples are as follows (in parts by weight):
comparative example 5
Some commercially available photoresist is stripped.
The photoresist stripper solution provided in example 1 was prepared as follows: and dissolving quaternary ammonium hydroxide, organic alcohol amine, organic alcohol, metal protective agent and corrosion inhibitor in an organic solvent to obtain the photoresist stripping solution.
Examples 2-16 and comparative examples 1-4 photoresist stripper preparation methods refer to example 1.
Performance test:
the photoresist stripper provided in examples 1 to 16 and comparative examples 1 to 5 were tested as follows:
as can be seen from the data, compared with the prior art, the product provided by the invention has more excellent photoresist removing capability and higher photoresist removing speed, the photoresist removing speed is more than 6 mu m/min, the product is obviously higher than the prior art and other comparative examples, and meanwhile, the photoresist residue is slight or even free, and the photoresist removing performance can be maintained at a lower temperature (40 ℃); meanwhile, the corrosion to the substrate is reduced by adopting the metal protective agent and the corrosion inhibitor, and the corrosion to the substrate and the insulating layer is respectively less than 50A/min and 12A/min, which is obviously superior to the prior art and other comparative examples; the product performance is further improved within the preferred proportioning range and raw material selection of the invention.
The applicant states that the present invention is described by way of the above examples as well as the method of making and using the same, but the present invention is not limited to, i.e., does not mean that the present invention must be practiced in dependence upon, the above examples. It should be apparent to those skilled in the art that any modification of the present invention, equivalent substitution of raw materials for the product of the present invention, addition of auxiliary components, selection of specific modes, etc., falls within the scope of the present invention and the scope of disclosure.
The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Claims (13)
1. The photoresist stripping solution is characterized by comprising, by weight, 0.5-10 parts of quaternary ammonium hydroxide, 65-85 parts of an organic solvent, 1-20 parts of an organic alcohol amine, 0.1-5 parts of an organic alcohol, 0.01-5 parts of a metal protective agent and 0.1-5 parts of an anticorrosive agent;
the quaternary ammonium hydroxide is a combination of tetramethylammonium hydroxide and tetrapropylammonium hydroxide;
the corrosion inhibitor is a combination of benzotriazole and benzimidazole;
the metal protective agent comprises an organosilane compound, wherein the organosilane compound comprises any one or a combination of at least two of 3-aminopropyl trimethoxysilane, (3-aminopropyl) triethoxysilane, diethylenetriaminopropyl trimethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, n-octyl trimethoxysilane, n-decyl trimethoxysilane, methacryloxypropyl trimethoxysilane, gamma-aminopropyl methyldiethoxysilane, gamma-aminopropyl methyldimethoxysilane, gamma-mercaptopropyl trimethoxysilane or gamma-methacryloxypropyl trimethoxysilane.
2. The photoresist stripper according to claim 1, wherein the photoresist stripper comprises, in parts by weight, 2-8 parts of quaternary ammonium hydroxide, 70-80 parts of an organic solvent, 5-15 parts of an organic alcohol amine, 1-4 parts of an organic alcohol, 1-4 parts of a metal protecting agent and 1-4 parts of an anticorrosive agent.
3. The photoresist stripper according to claim 1, wherein the organic solvent comprises any one or a combination of at least two of N-methylpyrrolidone, dimethyl sulfoxide, N-dimethylformamide, N-dimethylacetamide, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether, propylene glycol monobutyl ether, diethylene glycol monomethyl ether, or diethylene glycol monobutyl ether.
4. A photoresist stripper according to claim 3, wherein the organic solvent is dimethyl sulfoxide.
5. The photoresist stripper according to claim 1, wherein the organic alcohol amine comprises any one or a combination of at least two of monoethanolamine, diethanolamine, triethanolamine or diglycolamine.
6. The photoresist stripper according to claim 1, wherein the organic alcohol comprises any one or a combination of at least two of monohydric alcohol, dihydric alcohol, or trihydric alcohol.
7. The photoresist stripper according to claim 6, wherein the organic alcohol is a glycol.
8. The photoresist stripper according to claim 6, wherein the monohydric alcohol comprises any one or a combination of at least two of ethanol, isopropanol or 3-methyl-3-methoxy-1-butanol.
9. The photoresist stripper according to claim 6, wherein the glycol comprises ethylene glycol and/or propylene glycol.
10. The photoresist stripper according to claim 6, wherein the triol comprises glycerol.
11. The photoresist stripper according to claim 1, wherein the metal protecting agent is 3-aminopropyl trimethoxysilane.
12. A method of preparing a photoresist stripper according to any one of claims 1 to 11, comprising the steps of: and dissolving quaternary ammonium hydroxide, organic alcohol amine, organic alcohol, metal protective agent and corrosion inhibitor in an organic solvent to obtain the photoresist stripping solution.
13. Use of a photoresist stripper according to any of claims 1-11 in semiconductor packaging or wafer manufacturing.
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