JP2014033061A - Lead frame - Google Patents

Lead frame Download PDF

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JP2014033061A
JP2014033061A JP2012172500A JP2012172500A JP2014033061A JP 2014033061 A JP2014033061 A JP 2014033061A JP 2012172500 A JP2012172500 A JP 2012172500A JP 2012172500 A JP2012172500 A JP 2012172500A JP 2014033061 A JP2014033061 A JP 2014033061A
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lead
inner lead
lead frame
bending
frame according
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JP5997964B2 (en
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Takahiro Ishibashi
貴弘 石橋
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Mitsui High Tec Inc
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Mitsui High Tec Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent occurrence of poor bonding due to "fall down", while solving the problem of "bending" of the inner lead of a lead frame due to multiple pin and narrow pitch.SOLUTION: An inner lead is provided around a die pad, and the inner lead has an electrode terminal and a lead formed thin by half-etching. The lead has a protrusion formed on the back side of a bonding area (A) so as to protrude to the mounting surface side and to prevent the inner lead from falling down, and has a protrusion formed on the back side of other area (B) so as to protrude to the mounting surface side and to prevent the inner lead from bending.

Description

本発明は、リードフレームに関し、詳しくは半導体の一形態であるＱＦＮ型パッケージに供されるリードフレームに関するものである。 The present invention relates to a lead frame, and more particularly to a lead frame used in a QFN type package which is one form of a semiconductor.

リードフレームを製造するにあたっては、所定素材からなる薄い金属板をリードフレーム用材とし、これをエッチング手法を用いて加工しており、半導体チップが載置されるダイパッド部、このダイパッド部を囲むように配置されるインナーリード、このインナーリードに連続する電極端子部などを得るために、所定の形成パターンでレジスト剤を前記用材に施し、この後エッチング液によって不要部分を除去してリードフレームが得られている。 When manufacturing a lead frame, a thin metal plate made of a predetermined material is used as a lead frame material, which is processed using an etching technique, so that a die pad portion on which a semiconductor chip is placed and the die pad portion are surrounded. In order to obtain an inner lead to be disposed, an electrode terminal portion continuous with the inner lead, etc., a resist agent is applied to the material in a predetermined formation pattern, and then an unnecessary portion is removed with an etching solution to obtain a lead frame. ing.

昨今、リードフレームが超多ピンの半導体装置に対応できるようにとの要望を受けて、インナーリードのピッチを詰めてインナーリードの本数が多くなるようにとの試みがなされている。 In recent years, in response to a demand for the lead frame to be compatible with a super multi-pin semiconductor device, attempts have been made to increase the number of inner leads by reducing the pitch of the inner leads.

このようにインナーリードのピッチが小さいリードフレームを製造する場合には、用材のインナーリード形成部に対して、上下にパターン形成用のレジスト剤を施し、これをエッチングしてインナーリード部を得るようにしている。 When manufacturing a lead frame with a small inner lead pitch in this way, a resist agent for pattern formation is applied to the inner lead forming portion of the material up and down, and this is etched to obtain the inner lead portion. I have to.

そして、インナーリードの上面においては、ボンディングエリア（後工程において、半導体チップの電極とボンディングワイヤを接続するインナーリードの先端近傍の領域）を確保するために、ある程度のリード幅が必要であることから、リードフレーム裏面側からエッチングが速く進むように処理されている。 On the upper surface of the inner lead, a certain degree of lead width is required to secure a bonding area (a region near the tip of the inner lead that connects the electrode of the semiconductor chip and the bonding wire in a later step). The etching is performed so that the etching proceeds fast from the back side of the lead frame.

上記半導体装置に用いるリードフレームのインナーリードを図３（a）、（ｂ）に示す。 3A and 3B show inner leads of a lead frame used in the semiconductor device.

上述したように、リードフレーム裏面側からエッチングを入れるために、図３(a)に示すように、インナーリード１０のボンディングエリアを形成するリード部１１の厚みが小さくなるとインナーリード１０の剛性が低下し、ワイヤボンディング時にインナーリード１０が曲がり、ボンディング不良を生じるという問題があった。（以下、上記した問題を「曲がり」と総称することとする） As described above, since the etching is performed from the back side of the lead frame, as shown in FIG. 3A, the rigidity of the inner lead 10 decreases as the thickness of the lead portion 11 forming the bonding area of the inner lead 10 decreases. However, there is a problem that the inner lead 10 is bent at the time of wire bonding, resulting in bonding failure. (Hereafter, the above-mentioned problems will be collectively referred to as “bends”)

特開２００３-１８８３３１JP2003-188331

特開２００３-１８８３３１公報の構成によれば、図３（ｂ）に示すように、インナーリード１０のリード部１１の下面には裏面側に突出する盛り上がり１２が形成されている。この盛り上がり１２を形成することで、インナーリードの剛性を維持し、ワイヤボンディング時のインナーリードの曲がりを防止することができる。 According to the configuration of Japanese Patent Application Laid-Open No. 2003-188331, as shown in FIG. 3B, a bulge 12 is formed on the lower surface of the lead portion 11 of the inner lead 10 so as to protrude to the back surface side. By forming the bulge 12, the rigidity of the inner lead can be maintained, and the bending of the inner lead during wire bonding can be prevented.

しかしながら、裏面側に盛り上がりが形成されたリード部１１のボンディングエリアに正確にワイヤボンディングを行わないと、ワイヤが横にずれてしまい、ワイヤボンディング時にインナーリード１０が横に反れたり、ねじれて転んだりし、ボンディング不良を生じるという問題があった。（以下、上記した問題を「転び」と総称することとする） However, if the wire bonding is not accurately performed in the bonding area of the lead portion 11 where the bulge is formed on the back side, the wire is shifted laterally, and the inner lead 10 is warped sideways or twisted and rolled during wire bonding. However, there was a problem that a bonding failure occurred. (Hereafter, the above-mentioned problems will be collectively referred to as “falling”)

本発明は、多ピン・狭ピッチに起因する「曲がり」の問題を解決しつつ、「転び」によるボンディング不良の発生を防止することを目的とする。 An object of the present invention is to prevent the occurrence of bonding failure due to “rolling” while solving the problem of “bending” due to a large number of pins and a narrow pitch.

上記目的を達成するべく、請求項１の発明に係わるリードフレームは、ダイパッドの周囲にインナーリードを備え、前記インナーリードが電極端子部とハーフエッチングにより薄肉形成されたリード部とを有し、該リード部はボンディングエリア（A)の裏面に実装面側に突出しインナーリードの転びを防止する突出部を形成し、その他のエリア（B)の裏面に実装面側に突出しインナーリードの曲がりを防止する突出部が形成されていることを特徴としている。 In order to achieve the above object, a lead frame according to claim 1 comprises an inner lead around a die pad, the inner lead having an electrode terminal portion and a lead portion formed thin by half etching, The lead part protrudes toward the mounting surface on the back side of the bonding area (A) to prevent the inner lead from rolling, and the other part (B) protrudes toward the mounting surface side to prevent the inner lead from bending. A protruding portion is formed.

請求項２の発明に係わるリードフレームは、請求項１記載のリードフレームにおいて、前記インナーリードの転びを防止する突出部は前記リードの両側から連続して突出していることを特徴としている。 A lead frame according to a second aspect of the present invention is characterized in that, in the lead frame according to the first aspect, the protruding portions for preventing the inner lead from rolling continuously protrude from both sides of the lead.

請求項３の発明に係わるリードフレームは、請求項１記載のリードフレームにおいて、前記インナーリードの転びを防止する突出部は前記リードの両側から前記リードの中心線と交わる方向に連続して突出していることを特徴としている。 The lead frame according to a third aspect of the present invention is the lead frame according to the first aspect, wherein the protrusions for preventing the inner lead from rolling protrude continuously from both sides of the lead in a direction intersecting the center line of the lead. It is characterized by being.

請求項４の発明に係わるリードフレームは、請求項１〜３記載のリードフレームにおいて、前記インナーリードの曲がりを防止する突出部は前記リードの両側から連続して突出していることを特徴としている。 A lead frame according to a fourth aspect of the present invention is the lead frame according to any one of the first to third aspects, characterized in that the protruding portions for preventing the bending of the inner lead protrude continuously from both sides of the lead.

請求項５の発明に係わるリードフレームは、請求項１〜３記載のリードフレームにおいて、前記インナーリードの曲がりを防止する突出部は前記リードの中心線に沿って突出していることを特徴としている。 A lead frame according to a fifth aspect of the invention is characterized in that, in the lead frame according to the first to third aspects, the protruding portion for preventing the bending of the inner lead protrudes along the center line of the lead.

インナーリードのエリア内において、ボンディングエリア(A)とその他のエリア(B)のリード裏面側の形状を異ならせる事で、インナーリードの「曲がり」と「転び」を防止し、ワイヤボンディング性を向上させることができる。 In the inner lead area, the shape of the back side of the lead in the bonding area (A) and other areas (B) is made different to prevent the inner lead from bending and falling and improving wire bonding. Can be made.

さらに、インナーリードの剛性が増すことから、今後の更なるパッケージの薄型化、リードフレームの板厚の薄化の対応が可能になる。また、金ワイヤーだけでなく、銅ワイヤーを使用したワイヤボンディングも可能となる。 Furthermore, since the rigidity of the inner lead is increased, it will be possible to cope with further thinner packages and thinner lead frames in the future. Moreover, not only gold wires but also wire bonding using copper wires is possible.

（ａ）は本発明のリードフレームを用いたＱＦＮ型パッケージの断面側面図、（ｂ）は本発明のリードフレームを用いたＱＦＮ型パッケージの全体底面図。(A) is a cross-sectional side view of a QFN type package using the lead frame of the present invention, and (b) is an overall bottom view of the QFN type package using the lead frame of the present invention. （ａ）は本発明に係るリードフレームを示す要部底面図、（ｂ）は本発明に係るリードフレームの要部拡大図。(A) is a principal part bottom view which shows the lead frame which concerns on this invention, (b) is a principal part enlarged view of the lead frame which concerns on this invention. （ａ）は従来のＱＦＮ型パッケージにおけるリードフレームの要部拡大図、（ｂ）は（ａ）をＡ−Ａ方向からみた側面図。(A) is the principal part enlarged view of the lead frame in the conventional QFN type package, (b) is the side view which looked at (a) from the AA direction.

以下、本発明のリードフレームおよびこれを用いた半導体装置を具体化した実施の形態につき添付した図面を参照しつつ具体的に説明する。 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a lead frame and a semiconductor device using the same according to the present invention will be specifically described below with reference to the accompanying drawings.

図１は、本発明に係るリードフレームを適用した半導体装置であるＱＦＮ型パッケージの一例であり、このＱＦＮ型パッケージは、矩形平面形状に呈する封止体１を有し、この封止体１における実装面の中央域にはダイパッド２が露呈しており、さらに上記ダイパッド２の周囲には、所定個数の外部電極部３が所定位置に配置されつつ露呈している。 FIG. 1 shows an example of a QFN type package which is a semiconductor device to which a lead frame according to the present invention is applied. The QFN type package has a sealing body 1 having a rectangular planar shape. The die pad 2 is exposed in the central area of the mounting surface, and a predetermined number of external electrode portions 3 are exposed around the die pad 2 while being arranged at predetermined positions.

上記ＱＦＮ型パッケージを構成する、本発明に係るリードフレームは矩形状のダイパッド２と、該ダイパッド２の四方に形成された複数のインナーリード４とを具備しており、上記ＱＦＮ型パッケージはダイパッド２に半導体チップ６を搭載し、該半導体チップ６の各電極とインナーリード４とをボンディングワイヤ７を介して接続したのち、樹脂封止して封止体１を型成形することによって製造されている。 The lead frame according to the present invention constituting the QFN type package includes a rectangular die pad 2 and a plurality of inner leads 4 formed on four sides of the die pad 2, and the QFN type package includes the die pad 2. The semiconductor chip 6 is mounted, and each electrode of the semiconductor chip 6 and the inner lead 4 are connected via the bonding wires 7, and then the sealing body 1 is molded by resin sealing. .

ここで、本発明に係るリードフレームは、上述した如くダイパッド２とインナーリード４とを具備しており、上記ダイパッド２は、矩形状を呈する全周に亘り、各辺から突出する薄肉のフランジ２ａを有し、このフランジ２ａはダイパッド２における半導体チップ６の搭載面と面一に形成されている。 Here, the lead frame according to the present invention includes the die pad 2 and the inner lead 4 as described above, and the die pad 2 has a thin flange 2a protruding from each side over the entire circumference of a rectangular shape. The flange 2 a is formed flush with the mounting surface of the semiconductor chip 6 in the die pad 2.

一方、上記リードフレームのインナーリード４は、外部電極部３と一体に形成された薄肉のリード部５とを有している。 On the other hand, the inner lead 4 of the lead frame has a thin lead portion 5 formed integrally with the external electrode portion 3.

なお、上記インナーリード４のリード部５と上記ダイパッド２のフランジ２ａとは、図中の下方側（ＱＦＮ型パッケージで言えば、封止体の実装面側）からハーフエッチングによって薄肉形成されている。 The lead portion 5 of the inner lead 4 and the flange 2a of the die pad 2 are formed thin by half etching from the lower side in the drawing (in the case of a QFN type package, the mounting surface side of the sealing body). .

因みに、上記リードフレームは、図示していないサイドレール、タイバー、サポートバー等を備え、ＱＦＮ型パッケージの製造途中においては、これらの部材によってダイパッドおよびインナーリードが支持されることは、従前からのリードフレームの構成と何ら変わるところはない。 Incidentally, the lead frame includes side rails, tie bars, support bars, etc. (not shown), and during the manufacture of the QFN type package, the die pad and the inner lead are supported by these members. There is no difference from the frame structure.

以下では、本発明の特徴である上記リードフレームのリード部５について詳細に説明する。 Hereinafter, the lead portion 5 of the lead frame, which is a feature of the present invention, will be described in detail.

リード部５は上述するように、外部電極３と一体に形成され、かつ薄肉に形成されている。図２（ａ）に示すように、リード部５は半導体チップ６の各電極とボンディングワイヤ７によって電気的に接続されるボンディングエリアＡと、その他のエリアＢからなり、このリード部５の裏面側からリードフレーム板厚の１０〜３０パーセント（好ましくは１５〜２５パーセント）程度突出する突出部８を形成することで、インナーリード４の「曲がり」と「転び」を防止することを特徴としている。 As described above, the lead portion 5 is formed integrally with the external electrode 3 and is formed thin. As shown in FIG. 2A, the lead part 5 is composed of a bonding area A electrically connected to each electrode of the semiconductor chip 6 by a bonding wire 7 and another area B. The back side of the lead part 5 By forming the protruding portion 8 that protrudes about 10 to 30 percent (preferably 15 to 25 percent) of the lead frame plate thickness, the inner lead 4 is prevented from being “bent” and “rolled”.

すなわち図２（ｂ）に示すように、ボンディングエリアＡの裏面に実装面側に突出する転び防止形状の突出部８ａ、８ｂを形成し、その他のエリアＢの裏面には実装面側に突出する曲がり防止形状の突出部８ｃ、８ｄを形成する。 That is, as shown in FIG. 2 (b), protrusions 8a and 8b having anti-rolling shapes that protrude toward the mounting surface are formed on the back surface of the bonding area A, and the back surfaces of other areas B protrude toward the mounting surface. Protrusions 8c and 8d having an anti-bending shape are formed.

このリード部５の形成方法は、リード部５をエッチングで薄肉形成する際に、裏面側に微細なレジストパターンを残しておくことで容易に突出部８を形成することができる。また、レジストパターンが施されていない箇所は、エッチングによってリードフレームが浸食され窪み９が形成される。このようにして、突出部８と窪み９を備えたリード部５が形成される。 In the formation method of the lead portion 5, when the lead portion 5 is formed thin by etching, the protruding portion 8 can be easily formed by leaving a fine resist pattern on the back surface side. Further, the lead frame is eroded by etching to form a recess 9 at a portion where the resist pattern is not applied. In this way, the lead portion 5 including the protruding portion 8 and the depression 9 is formed.

本発明による第１の実施の形態のリードフレームは、図２（ａ）に示すように、突出部８がリード５幅方向の両側から連続して突出し、インナーリード４（リード部５）の中央線Ｓに沿って窪み９が形成されている。図２（ｂ）で説明すると、ボンディングエリアＡとその他のエリアＢ両方に同一の形状の突出部８ａ、８ｃと窪み９ａ、９ｃが形成される。このように突出部８ａをリード５の両側から連続して突出させ、中央に窪み９ａを形成することで、ボンディングエリアＡでのインナーリード４の転びを防止することができる。また、その他のエリアＢで突出部８ｃをリード５ｃの両側から連続して突出させ、リード５ｃの中心線Ｓに沿って窪み９ｃを形成することで、その他のエリアＢでのインナーリード４の曲がりを防止することができる。 In the lead frame according to the first embodiment of the present invention, as shown in FIG. 2A, the protruding portion 8 protrudes continuously from both sides in the width direction of the lead 5 and the center of the inner lead 4 (lead portion 5). A recess 9 is formed along the line S. Referring to FIG. 2B, protrusions 8a and 8c and depressions 9a and 9c having the same shape are formed in both the bonding area A and the other area B. Thus, the protrusion 8a is continuously protruded from both sides of the lead 5, and the depression 9a is formed in the center, so that the inner lead 4 can be prevented from falling in the bonding area A. Further, the protrusion 8c is continuously protruded from both sides of the lead 5c in the other area B, and the recess 9c is formed along the center line S of the lead 5c, whereby the inner lead 4 is bent in the other area B. Can be prevented.

次に、本発明による第２の実施の形態のリードフレームについて説明する。この例では、図２（ｂ）に示すように、ボンディングエリアＡには突出部８ａがリード５の両側から連続して突出し、インナーリード４（リード部５ａ）の中央線Ｓに沿って窪み９ａが形成されている。その他のエリアＢにはリード５ｄの中心線Ｓに沿って突出部８ｄが形成され、リード５ｄ幅方向の両側に中心線Ｓに沿って窪み９ｄが形成されている。かかる構成によれば、ボンディングエリアＡでインナーリード４の転びを防止し、その他のエリアＢでインナーリード４の曲がりを防止することができる。 Next, a lead frame according to a second embodiment of the present invention will be described. In this example, as shown in FIG. 2 (b), the protruding portion 8a continuously protrudes from both sides of the lead 5 in the bonding area A, and is recessed 9a along the center line S of the inner lead 4 (lead portion 5a). Is formed. In other areas B, protrusions 8d are formed along the center line S of the lead 5d, and depressions 9d are formed along the center line S on both sides in the width direction of the lead 5d. According to this configuration, the inner lead 4 can be prevented from rolling in the bonding area A, and the inner lead 4 can be prevented from bending in the other area B.

次に、本発明による第３の実施の形態のリードフレームについて説明する。この例では、図２（ｂ）に示すように、ボンディングエリアＡには突出部８ｂがリード５ｂの両側からリード５ｂの中心線Ｓと交わる方向に亘って連続して突出している。その他のエリアＢには突出部８ｃをリード８ｃの両側から連続して突出し、リード部５ｃの中心線Ｓに沿って窪み９ｃが形成されている。かかる構成によれば、ボンディングエリアＡでインナーリード４の転びを防止し、その他のエリアＢでインナーリード４の曲がりを防止することができる。 Next, a lead frame according to a third embodiment of the present invention will be described. In this example, as shown in FIG. 2B, the protruding portions 8b continuously protrude from the both sides of the lead 5b in the bonding area A in the direction intersecting the center line S of the lead 5b. In the other area B, the protruding portion 8c continuously protrudes from both sides of the lead 8c, and a recess 9c is formed along the center line S of the lead portion 5c. According to this configuration, the inner lead 4 can be prevented from rolling in the bonding area A, and the inner lead 4 can be prevented from bending in the other area B.

次に、本発明による第４の実施の形態のリードフレームについて説明する。この例では、図２（ｂ）に示すように、ボンディングエリアＡには突出部８ｂがリード５ｂの両側からリード５ｂの中心線Ｓと交わる方向に亘って連続して突出し、その他のエリアＢには突出部８ｄをリード５ｄの中心線Ｓに沿って突出し、リード５ｄの両側にリード５ｄの中心線Ｓに沿って窪み９ｄが形成されている。かかる構成によれば、ボンディングエリアＡでインナーリード４の転びを防止し、その他のエリアＢでインナーリード４の曲がりを防止することができる。 Next, a lead frame according to a fourth embodiment of the present invention will be described. In this example, as shown in FIG. 2B, in the bonding area A, the protruding portions 8b continuously protrude from both sides of the lead 5b in the direction intersecting the center line S of the lead 5b, and in the other areas B. The protrusion 8d protrudes along the center line S of the lead 5d, and depressions 9d are formed along the center line S of the lead 5d on both sides of the lead 5d. According to this configuration, the inner lead 4 can be prevented from rolling in the bonding area A, and the inner lead 4 can be prevented from bending in the other area B.

Ｓ：中心線、１：封止体、２：ダイパッド、３：電極端子部、４：インナーリード、５：リード部、５ａ：リード部、５ｂ：リード部、５ｃ：リード部、５ｄ：リード部、６：半導体チップ、７：ボンディングワイヤ、８：突出部、８ａ：突出部、８ｂ：突出部、８ｃ：突出部、８ｄ：突出部、９：窪み、９ａ：窪み、９ｂ：窪み、９ｃ：窪み、９ｄ：窪み、１０：インナーリード、１１：リード部、１２：盛り上がり S: Center line, 1: Sealed body, 2: Die pad, 3: Electrode terminal part, 4: Inner lead, 5: Lead part, 5a: Lead part, 5b: Lead part, 5c: Lead part, 5d: Lead part , 6: semiconductor chip, 7: bonding wire, 8: protrusion, 8a: protrusion, 8b: protrusion, 8c: protrusion, 8d: protrusion, 9: depression, 9a: depression, 9b: depression, 9c: Indentation, 9d: Indentation, 10: Inner lead, 11: Lead part, 12: Swell

Claims (5)

ダイパッドの周囲にインナーリードを備え、前記インナーリードが電極端子部とハーフエッチングにより薄肉形成されたリード部とを有し、該リード部はボンディングエリア（A)の裏面に実装面側に突出しインナーリードの転びを防止する突出部を形成し、その他のエリア（B)の裏面に実装面側に突出しインナーリードの曲がりを防止する突出部が形成されていることを特徴とするリードフレーム。 An inner lead is provided around the die pad, and the inner lead has an electrode terminal portion and a lead portion formed thinly by half etching, and the lead portion protrudes toward the mounting surface on the back surface of the bonding area (A) and is an inner lead. A lead frame characterized in that a protrusion is formed to prevent rolling, and a protrusion is formed on the back surface of the other area (B) that protrudes toward the mounting surface to prevent bending of the inner lead. 請求項１記載のリードフレームにおいて、前記インナーリードの転びを防止する突出部は前記リードの両側から連続して突出していることを特徴とするリードフレーム。 2. The lead frame according to claim 1, wherein the projecting portions for preventing the inner lead from rolling continuously project from both sides of the lead. 請求項１記載のリードフレームにおいて、前記インナーリードの転びを防止する突出部は前記リードの両側から前記リードの中心線と交わる方向に連続して突出していることを特徴とするリードフレーム。 2. The lead frame according to claim 1, wherein the projecting portions for preventing the inner lead from rolling continuously project from both sides of the lead in a direction intersecting with the center line of the lead. 請求項１〜３記載のリードフレームにおいて、前記インナーリードの曲がりを防止する突出部は前記リードの両側から連続して突出していることを特徴とするリードフレーム。 The lead frame according to claim 1, wherein the protruding portion for preventing the bending of the inner lead protrudes continuously from both sides of the lead. 請求項１〜３記載のリードフレームにおいて、前記インナーリードの曲がりを防止する突出部は前記リードの中心線に沿って突出していることを特徴とするリードフレーム。 4. The lead frame according to claim 1, wherein the protruding portion for preventing the bending of the inner lead protrudes along the center line of the lead.
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Publication number Priority date Publication date Assignee Title
JP2016162838A (en) * 2015-02-27 2016-09-05 Ｓｈマテリアル株式会社 Lead frame and manufacturing method thereof
JP2020088210A (en) * 2018-11-27 2020-06-04 大日本印刷株式会社 Lead frame and semiconductor device

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JP2001185671A (en) * 1999-12-22 2001-07-06 Mitsubishi Electric Corp Method of manufacturing for semiconductor device and method of manufacturing for lead frame used for the same
JP2007281182A (en) * 2006-04-06 2007-10-25 Taihei Denshi Kk Resin-sealed semiconductor device
JP2010192509A (en) * 2009-02-16 2010-09-02 Dainippon Printing Co Ltd Resin-sealed semiconductor device, lead frame, method of manufacturing thereof, and method of manufacturing resin-sealed semiconductor device

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Publication number Priority date Publication date Assignee Title
JP2001185671A (en) * 1999-12-22 2001-07-06 Mitsubishi Electric Corp Method of manufacturing for semiconductor device and method of manufacturing for lead frame used for the same
JP2007281182A (en) * 2006-04-06 2007-10-25 Taihei Denshi Kk Resin-sealed semiconductor device
JP2010192509A (en) * 2009-02-16 2010-09-02 Dainippon Printing Co Ltd Resin-sealed semiconductor device, lead frame, method of manufacturing thereof, and method of manufacturing resin-sealed semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016162838A (en) * 2015-02-27 2016-09-05 Ｓｈマテリアル株式会社 Lead frame and manufacturing method thereof
JP2020088210A (en) * 2018-11-27 2020-06-04 大日本印刷株式会社 Lead frame and semiconductor device
JP7215110B2 (en) 2018-11-27 2023-01-31 大日本印刷株式会社 Lead frames and semiconductor equipment

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