JP2014027159A - Plasma processing apparatus and plasma processing method - Google Patents

Plasma processing apparatus and plasma processing method Download PDF

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JP2014027159A
JP2014027159A JP2012167326A JP2012167326A JP2014027159A JP 2014027159 A JP2014027159 A JP 2014027159A JP 2012167326 A JP2012167326 A JP 2012167326A JP 2012167326 A JP2012167326 A JP 2012167326A JP 2014027159 A JP2014027159 A JP 2014027159A
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substrate
dielectric member
side wall
tray
substrate mounting
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JP5895240B2 (en
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Shogo Okita
尚吾 置田
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Panasonic Corp
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PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of preventing entrance of reaction products generated during plasma processing into a contact area between the upper end of a substrate mounting plane in a substrate mounting area of a dielectric member and the bottom plane of the substrate.SOLUTION: The plasma processing apparatus has: a chamber 12 for performing plasma processing of a substrate W; a dielectric member 30 including a substrate mounting area 30b formed in the chamber 12 for placing the substrate W thereon; and an electrode 34 provided in a dielectric member 30 to electrostatically attract the substrate W to the substrate mounting area 30b. The substrate mounting area 30b on the dielectric member 30 includes: the substrate mounting plane 30e on which a bottom face Wa of the substrate W is placed; a first side wall portion 30j extending downward from the outer edge of the upper end of the substrate mounting plane 30e and a second side wall portion 30d extending downward from a position of a height lower than the upper end of the first side wall portion 30j. When viewing the substrate mounting area 30b with the substrate W placed thereon from above, the first side wall portion 30j is positioned at inner side than the external periphery end Wc of the substrate W and the second side wall portion 30d with respect to a central portion 30m of the substrate mounting area 30b.

Description

本発明は、基板をプラズマ処理するプラズマ処理装置およびプラズマ処理方法に関する。   The present invention relates to a plasma processing apparatus and a plasma processing method for plasma processing a substrate.

従来より、減圧されたチャンバ内において基板をプラズマ処理することが行われている。基板は、チャンバ内に設けられた誘電体部材に載置された状態でプラズマ処理される。例えば、特許文献１に記載のプラズマ処理装置の場合、基板が、誘電体部材の上面に形成された島状（凸状）の基板載置部の基板載置面に載置される。基板載置部に内蔵されているＥＳＣ電極に電圧を印加することにより、基板が基板載置部の基板載置面に静電吸着される。   Conventionally, a substrate is subjected to plasma processing in a decompressed chamber. The substrate is plasma-treated in a state where it is placed on a dielectric member provided in the chamber. For example, in the case of the plasma processing apparatus described in Patent Document 1, the substrate is placed on the substrate placement surface of the island-like (convex) substrate placement portion formed on the upper surface of the dielectric member. By applying a voltage to the ESC electrode built in the substrate platform, the substrate is electrostatically attracted to the substrate platform surface of the substrate platform.

また、誘電体部材の基板載置部の基板載置面は、ヘリウムガスなどの伝熱ガスが充満される凹状の伝熱ガス収容部を備える。基板が基板載置部の基板載置面の上端（伝熱ガス収容部以外の基板載置面の部分）に静電吸着されている状態のとき、伝熱ガス収容部は密閉状態となり、この密閉状態の伝熱ガス収容部に伝熱ガスが充満される。密閉状態の伝熱ガス収容部に充満された伝熱ガスを介して、プラズマ処理によって高温状態の基板から基板載置部に熱が移動する。その結果、基板が冷却される。   Further, the substrate mounting surface of the substrate mounting portion of the dielectric member includes a concave heat transfer gas accommodating portion that is filled with a heat transfer gas such as helium gas. When the substrate is electrostatically adsorbed to the upper end of the substrate mounting surface of the substrate mounting portion (the portion of the substrate mounting surface other than the heat transfer gas storage portion), the heat transfer gas storage portion is hermetically sealed. The heat transfer gas is filled in the sealed heat transfer gas accommodating portion. Heat is transferred from the substrate in the high temperature state to the substrate mounting portion by the plasma processing through the heat transfer gas filled in the heat transfer gas accommodating portion in the sealed state. As a result, the substrate is cooled.

特許第４３６１０４５号公報Japanese Patent No. 4361405

ところで、プラズマ処理中において、例えば、エッチングガスや基板上の薄膜やマスクに含まれる成分由来の反応生成物（デポ）が発生することがある。特許文献１に記載のプラズマ処理装置の場合、島状の基板載置部の側壁部に沿って反応生成物が堆積しやすい。基板載置部の側壁部に沿う反応生成物の堆積は、基板載置部に載置された基板の外周端と基板を搬送するトレイとの隙間（入り組んだ部位）に反応生成物が入り込み、その反応生成物が基板載置部の側壁部に付着し、堆積していくことによって生じる。   By the way, during plasma processing, for example, reaction products (depots) derived from components contained in an etching gas, a thin film on a substrate, or a mask may be generated. In the case of the plasma processing apparatus described in Patent Document 1, reaction products are likely to be deposited along the side wall portion of the island-shaped substrate mounting portion. The deposition of the reaction product along the side wall portion of the substrate platform is performed by the reaction product entering a gap (an intricate part) between the outer peripheral edge of the substrate placed on the substrate platform and the tray for transporting the substrate, The reaction product is generated by adhering to and depositing on the side wall of the substrate mounting portion.

この基板載置部の側壁部に沿って堆積した反応生成物が、基板載置面の上端と基板の下面との間の接触領域に入り込むことがある。基板載置面の上端と基板の下面との間の接触領域に反応生成物が入り込むと、基板が基板載置面に適切に静電保持されなくなる。または、基板が基板載置面に静電保持されても、基板の下面と基板載置面との接触領域に隙間が生じる。その結果、例えば、基板載置面の上端と基板の下面との間から伝熱ガス収容部内の伝熱ガスが漏れ、基板の冷却性が低下する可能性がある。   The reaction product deposited along the side wall of the substrate platform may enter the contact area between the upper end of the substrate platform and the lower surface of the substrate. When the reaction product enters the contact region between the upper end of the substrate placement surface and the lower surface of the substrate, the substrate is not appropriately electrostatically held on the substrate placement surface. Alternatively, even if the substrate is electrostatically held on the substrate mounting surface, a gap is generated in the contact area between the lower surface of the substrate and the substrate mounting surface. As a result, for example, the heat transfer gas in the heat transfer gas storage portion may leak from between the upper end of the substrate mounting surface and the lower surface of the substrate, and the cooling performance of the substrate may be reduced.

そこで、本発明は、誘電体部材の基板載置部の基板載置面の上端と基板の下面との間の接触領域に、プラズマ処理中に発生する反応生成物が入り込むことを抑制することを課題とする。   Therefore, the present invention suppresses the reaction product generated during the plasma processing from entering the contact region between the upper end of the substrate mounting surface of the substrate mounting portion of the dielectric member and the lower surface of the substrate. Let it be an issue.

上述の課題を解決するために、本発明の第１の態様によれば、
基板のプラズマ処理を実行する減圧可能なチャンバと、
チャンバ内に設けられ、基板が載置される基板載置部を備える誘電体部材と、
誘電体部材に内蔵され、基板を基板載置部に静電吸着するための電極とを有し、
誘電体部材の基板載置部が、基板の下面が載置される基板載置面と、基板載置面の上端の外縁から下方に延在する第１の側壁部と、第１の側壁部の上端に比べて低い高さ位置から下方に延在する第２の側壁部とを備え、
基板が載置された状態の基板載置部を上方から見た場合、基板載置部の中心部に対して第１の側壁部が基板の外周端および第２の側壁部より内側に位置する、プラズマ処理装置が提供される。 In order to solve the above-mentioned problem, according to the first aspect of the present invention,
A depressurizable chamber for performing plasma processing of the substrate;
A dielectric member provided in the chamber and provided with a substrate mounting portion on which the substrate is mounted;
Having an electrode built in the dielectric member and electrostatically adsorbing the substrate to the substrate mounting portion;
The substrate mounting portion of the dielectric member includes a substrate mounting surface on which the lower surface of the substrate is mounted, a first side wall portion extending downward from the outer edge of the upper end of the substrate mounting surface, and a first side wall portion A second side wall portion extending downward from a height position lower than the upper end of the
When the substrate platform with the substrate placed thereon is viewed from above, the first side wall is located inside the outer peripheral edge of the substrate and the second side wall with respect to the center of the substrate platform. A plasma processing apparatus is provided.

本発明の第２の態様によれば、
第１の側壁部が、基板載置部の内部側に向かって凸状に湾曲する湾曲部を備える、第１の態様に記載のプラズマ処理装置が提供される。 According to a second aspect of the invention,
The plasma processing apparatus according to the first aspect is provided, wherein the first side wall portion includes a curved portion that curves in a convex shape toward the inside of the substrate mounting portion.

本発明の第３の態様によれば、
誘電体部材の基板載置部が、第１の側壁部の下端から第２の側壁部の上端に向かう平面部を備える、第１の態様に記載のプラズマ処理装置が提供される。 According to a third aspect of the invention,
The plasma processing apparatus according to the first aspect is provided, wherein the substrate mounting portion of the dielectric member includes a planar portion that extends from the lower end of the first side wall portion toward the upper end of the second side wall portion.

本発明の第４の態様によれば、
誘電体部材の基板載置部の基板載置面が通過可能であって厚み方向に貫通する基板収容孔と、基板収容孔に収容された基板の下面の外周縁部分を支持する基板支持部とを備え、チャンバに搬入搬出可能なトレイを有し、
誘電体部材の基板載置部は、トレイの基板収容孔の内周面と誘電体部材の基板載置部の第２の側壁部とが対向するようにトレイを誘電体部材に配置可能に、且つ、基板を収容した状態のトレイが誘電体部材に配置されたときに基板がトレイの基板支持部から離間した状態で誘電体部材の基板載置部の基板載置面上に載置されるように構成されている、第１から第３の態様のいずれか一に記載のプラズマ処理装置が提供される。 According to a fourth aspect of the invention,
A substrate receiving hole through which the substrate mounting surface of the substrate mounting portion of the dielectric member can pass and penetrates in the thickness direction; and a substrate support portion supporting an outer peripheral edge portion of the lower surface of the substrate received in the substrate receiving hole Comprising a tray that can be carried into and out of the chamber,
The substrate mounting portion of the dielectric member can be disposed on the dielectric member so that the inner peripheral surface of the substrate receiving hole of the tray and the second side wall portion of the substrate mounting portion of the dielectric member face each other. When the tray containing the substrate is placed on the dielectric member, the substrate is placed on the substrate placement surface of the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the tray. The plasma processing apparatus according to any one of the first to third aspects is provided.

本発明の第５の態様によれば、
電極が、誘電体部材の基板載置部の基板載置面と平行に延在し、上方視で外縁に規則的な凹凸形状を備える、第１から第４の態様にいずれか一に記載のプラズマ処理装置が提供される。 According to a fifth aspect of the present invention,
The electrode according to any one of the first to fourth aspects, wherein the electrode extends in parallel with the substrate placement surface of the substrate placement portion of the dielectric member, and has a regular uneven shape on the outer edge as viewed from above. A plasma processing apparatus is provided.

本発明の第６の態様によれば、
減圧されたチャンバ内で基板をプラズマ処理するプラズマ処理方法であって、
チャンバ内に設けられ、基板の下面が載置される基板載置面、基板載置面の上端の外縁から下方に延在する第１の側壁部、および第１の側壁部の上端に比べて低い高さ位置から下方に延在する第２の側壁部を備える基板載置部を有する誘電体部材と、
誘電体部材に内蔵され、基板を基板載置部に静電吸着するための電極とを用意し、
上方から見た場合に、基板載置部の中心部に対して誘電体部材の基板載置部の第１の側壁部が基板の外周端および第２の側壁部より内側に位置するように、誘電体部材の基板載置部上に基板を載置し、
誘電体部材の基板載置部上に載置された基板を、誘電体部材に内蔵された電極に電圧を印加することによって誘電体部材に静電的に吸着させる、プラズマ処理方法が提供される。 According to a sixth aspect of the present invention,
A plasma processing method for plasma processing a substrate in a decompressed chamber,
Compared to a substrate placement surface provided in the chamber and on which the lower surface of the substrate is placed, a first side wall portion extending downward from an outer edge of an upper end of the substrate placement surface, and an upper end of the first side wall portion A dielectric member having a substrate mounting portion with a second side wall portion extending downward from a low height position;
An electrode built in the dielectric member for electrostatically adsorbing the substrate to the substrate mounting portion is prepared,
When viewed from above, the first side wall portion of the substrate mounting portion of the dielectric member is located inside the outer peripheral end of the substrate and the second side wall portion with respect to the center portion of the substrate mounting portion. Placing the substrate on the substrate placement portion of the dielectric member;
Provided is a plasma processing method in which a substrate placed on a substrate placement portion of a dielectric member is electrostatically attracted to the dielectric member by applying a voltage to an electrode built in the dielectric member. .

本発明によれば、誘電体部材の基板載置部の基板載置面の上端と基板の下面との間の接触領域に、プラズマ処理中に発生する反応生成物が入り込むことが抑制される。   According to the present invention, reaction products generated during plasma processing are suppressed from entering the contact region between the upper end of the substrate placement surface of the substrate placement portion of the dielectric member and the lower surface of the substrate.

本発明の一実施の形態に係るプラズマ処理装置の構成図The block diagram of the plasma processing apparatus which concerns on one embodiment of this invention トレイ、基板、およびステージの概略的斜視図Schematic perspective view of tray, substrate, and stage トレイ、基板、およびステージの概略的斜視図（トレイ載置状態）Schematic perspective view of tray, substrate, and stage (tray placement state) トレイおよびステージの部分断面図Partial sectional view of tray and stage トレイおよびステージの部分断面図（トレイ載置状態）Partial sectional view of tray and stage (tray placement state) トレイおよびステージの一部の上面図Top view of tray and part of stage 別の実施の形態のトレイの概略的斜視図Schematic perspective view of a tray according to another embodiment トレイの基板支持部が位置する部分における、トレイおよびステージの部分拡大断面図（トレイ載置状態）Partial enlarged sectional view of the tray and stage at the portion where the substrate support portion of the tray is located (tray placement state) トレイの基板支持部が位置しない部分における、トレイおよびステージの部分拡大断面図（トレイ載置状態）Partial enlarged cross-sectional view of the tray and stage at the portion where the substrate support portion of the tray is not located (tray placement state) 比較例および実施例の誘電体部材の基板載置部の部分拡大断面図Partial enlarged sectional view of the substrate mounting portion of the dielectric member of the comparative example and the example 別の実施の形態の誘電体部材の基板載置部の部分拡大断面図The partial expanded sectional view of the board | substrate mounting part of the dielectric material member of another embodiment 別の実施の形態の誘電体部材の記載載置部の部分拡大断面図Partial enlarged sectional view of the mounting portion of the dielectric member according to another embodiment 別の実施の形態のトレイおよびステージの部分拡大断面図Partial enlarged sectional view of a tray and a stage according to another embodiment 別の実施の形態のステージと、対応するトレイの部分断面図Partial cross-sectional view of another embodiment of the stage and corresponding tray 図１３に示すトレイおよびステージの部分拡大断面図Partial enlarged sectional view of the tray and stage shown in FIG. 別の実施の形態の誘電体部材の一部の上面図Top view of a portion of a dielectric member according to another embodiment 別の実施の形態の誘電体部材の一部の上面図Top view of a portion of a dielectric member according to another embodiment

以下、本発明の実施の形態について、図面を参照しながら説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明の一実施の形態に係るプラズマ処理装置の構成図であり、具体的には、プラズマ処理装置の一例である、ＩＣＰ（誘導結合プラズマ）型のドライエッチング装置の構成を示している。   FIG. 1 is a configuration diagram of a plasma processing apparatus according to an embodiment of the present invention, and specifically shows a configuration of an ICP (inductively coupled plasma) type dry etching apparatus which is an example of a plasma processing apparatus. ing.

ドライエッチング装置１０は、基板Ｗに対してプラズマ処理を実行する処理室を構成するチャンバ（真空容器）１２と、チャンバ１２の上端開口を閉鎖し、石英等からなる誘電体から作製された天板１４と、天板１４上に配置されたＩＣＰコイル１６とを有する。   The dry etching apparatus 10 includes a chamber (vacuum container) 12 that constitutes a processing chamber that performs plasma processing on a substrate W, and a top plate that is made of a dielectric made of quartz or the like by closing the upper end opening of the chamber 12. 14 and an ICP coil 16 disposed on the top plate 14.

ＩＣＰコイル５にはマッチング回路を備える第１の高周波電源部１８が電気的に接続されている。   The ICP coil 5 is electrically connected to a first high frequency power supply unit 18 having a matching circuit.

天板１４と対向するチャンバ１２内の底部には、バイアス電圧が印加される下部電極として機能し、および基板Ｗを保持する保持台として機能するステージ２０が配置されている。   A stage 20 functioning as a lower electrode to which a bias voltage is applied and functioning as a holding table for holding the substrate W is disposed at the bottom of the chamber 12 facing the top plate 14.

チャンバ１２には、例えばロードドック室（図示せず）と連通する開閉可能な搬入出口（図示せず）が設けられている。この搬入出口を介して、基板Ｗを収容した状態のトレイ２２が、トレイ搬送機構（図示せず）によってチャンバ１２内に対して搬入搬出される。   The chamber 12 is provided with an openable / closable loading / unloading port (not shown) that communicates with, for example, a load dock chamber (not shown). Through this loading / unloading port, the tray 22 in a state where the substrate W is accommodated is loaded into and unloaded from the chamber 12 by a tray transfer mechanism (not shown).

また、チャンバ１２には、エッチング用のガスをチャンバ１２内に導入するためのガス導入口２４が設けられている。このガス導入口２４を介して、例えば、例えば、ＢＣｌ３、Ｃｌ２、Ａｒ、Ｏ２、ＣＦ４などのガスがチャンバ１２内に導入される。さらに、チャンバ３には排気口２６が設けられており、排気口２６には、チャンパ１２内を減圧するための真空ポンプやチャンバ１２内の圧力を制御する圧力制御弁等から構成される圧力制御部２８が接続されている。 Further, the chamber 12 is provided with a gas inlet 24 for introducing an etching gas into the chamber 12. For example, a gas such as BCl 3 , Cl 2 , Ar, O 2 , or CF 4 is introduced into the chamber 12 through the gas introduction port 24. Further, the chamber 3 is provided with an exhaust port 26. The exhaust port 26 includes a vacuum pump for reducing the pressure inside the chamber 12, a pressure control valve for controlling the pressure in the chamber 12, and the like. The unit 28 is connected.

ここからは、基板Ｗを収容したトレイ２２と、トレイ２２が載置されるステージ２０の詳細について説明する。   From here, the detail of the tray 22 which accommodated the board | substrate W and the stage 20 in which the tray 22 is mounted is demonstrated.

図２および図３は、基板Ｗ、トレイ２２、およびステージ２０の概略的斜視図である。また、図４Ａおよび図４Ｂは、トレイ２２およびステージ２０の部分断面図である。さらに、図５は、トレイ２２およびステージ２０の一部の上面図である。   2 and 3 are schematic perspective views of the substrate W, the tray 22, and the stage 20. FIG. 4A and 4B are partial cross-sectional views of the tray 22 and the stage 20. FIG. 5 is a top view of a part of the tray 22 and the stage 20.

図２および図４Ａは、基板Ｗを収容したトレイ２２がステージ２０に載置される前の状態を示している。図２に示すように、本実施の形態の場合、基板Ｗは円板状である。また、トレイ２２も円板状である。なお、基板Ｗやトレイ２２の形状は、円板状に限定されず、矩形状等の多角形状であってもよい。   2 and 4A show a state before the tray 22 containing the substrate W is placed on the stage 20. As shown in FIG. 2, in the case of the present embodiment, the substrate W has a disk shape. The tray 22 is also disk-shaped. The shape of the substrate W and the tray 22 is not limited to a disk shape, and may be a polygonal shape such as a rectangular shape.

トレイ２２は、トレイ２２の上面２２ａから下面２２ｂに向かって貫通し、基板Ｗを収容する基板収容孔２２ｃと、基板収容孔２２ｃに収容された基板Ｗを支持する爪状の複数の基板支持部２２ｄとを有する。   The tray 22 penetrates from the upper surface 22a to the lower surface 22b of the tray 22, and includes a substrate accommodation hole 22c that accommodates the substrate W, and a plurality of claw-shaped substrate support portions that support the substrate W accommodated in the substrate accommodation hole 22c. 22d.

トレイの基板収容孔２２ｃは、基板Ｗが収容できる大きさに形成されている。基板Ｗの下面Ｗａの外周縁部分を支持する複数の基板支持部２２ｄは、基板収容孔２２ｃの内周面からその中心に向かって突出するように形成されている。また、基板支持部２２ｄは、基板Ｗの下面Ｗａの外周縁部分と当接するテーパー部２２ｅを備える。テーパー部２２ｅは、トレイ２２の上面２２ａ側から下面２２ｂ側に延在しつつ、基板収容孔２２ｃの中心に向かって延在する傾斜面で構成されている。   The tray substrate receiving hole 22c is formed in a size that can accommodate the substrate W. The plurality of substrate support portions 22d that support the outer peripheral edge portion of the lower surface Wa of the substrate W are formed so as to protrude from the inner peripheral surface of the substrate accommodation hole 22c toward the center thereof. The substrate support portion 22d includes a tapered portion 22e that comes into contact with the outer peripheral edge portion of the lower surface Wa of the substrate W. The tapered portion 22e is configured by an inclined surface that extends from the upper surface 22a side of the tray 22 toward the lower surface 22b side and extends toward the center of the substrate accommodation hole 22c.

トレイ２２による基板Ｗの搬送時、複数の基板支持部２２ｄが基板Ｗの下面Ｗａの外周縁部分を支持することにより、基板Ｗは、トレイ２２の基板収容孔２２ｃを通過することなく、基板収容孔２２ｃ内に収容される。また、基板支持部２２ｄのテーパー部２２ｅが基板Ｗを支持することにより、基板Ｗの中心が、基板収容孔２２ｃの中心に位置合わせされうる（センタリングされる）。   When the substrate W is transported by the tray 22, the plurality of substrate support portions 22 d support the outer peripheral edge portion of the lower surface Wa of the substrate W, so that the substrate W can be accommodated without passing through the substrate accommodation hole 22 c of the tray 22. It is accommodated in the hole 22c. Further, the taper portion 22e of the substrate support portion 22d supports the substrate W, so that the center of the substrate W can be aligned (centered) with the center of the substrate accommodation hole 22c.

なお、基板Ｗの下面Ｗａを支持するトレイの基板支持部は、図２に示すトレイ２２の基板支持部２２ｄのように爪状に限らない。例えば、図６に示す別の実施の形態に係るトレイ２２’のように、基板収容孔２２ｃ’の内周面からその中心に向かって突出し、基板Ｗの下面Ｗａの外周縁部分を全体的に支持する環状の基板支持部２２ｄ’であってもよい。   In addition, the board | substrate support part of the tray which supports the lower surface Wa of the board | substrate W is not restricted to a nail | claw shape like the board | substrate support part 22d of the tray 22 shown in FIG. For example, like a tray 22 ′ according to another embodiment shown in FIG. 6, the outer peripheral edge portion of the lower surface Wa of the substrate W protrudes from the inner peripheral surface of the substrate housing hole 22c ′ toward the center thereof. It may be an annular substrate support portion 22d ′ to be supported.

一方、ステージ２０は、図２に示すように、その上部に、セラミックス等の誘電材料から作製され、基板Ｗおよびトレイ２２が載置される誘電体部材３０と、基板Ｗを収容したトレイ２２の誘電体部材３０に対する水平方向位置を位置合わせるためのガイドリング３２とを有する。   On the other hand, as shown in FIG. 2, the stage 20 is made of a dielectric material such as ceramics on the upper portion thereof, and a dielectric member 30 on which the substrate W and the tray 22 are placed, and a tray 22 that accommodates the substrate W. And a guide ring 32 for aligning the horizontal position with respect to the dielectric member 30.

ガイドリング３２は、環状であって、下端開口の径が上端開口の径に比べて小さいテーパー状の内周面３２ａを備える。ガイドリング３２のテーパー状の内周面３２ａがテーパー状に形成されたトレイ２２の側面２２ｆに係合することにより、トレイ２２が誘電体部材３０に対して位置合わせされた状態で載置される。なお、上面視（上方視）で、トレイ２２の中心に対するトレイ２２の向きは、センサ等によって検出されるトレイ２２の外周に形成されたノッチ２２ｇ等の特徴部（マーク）に基づいて位置合わせされる。   The guide ring 32 is annular and includes a tapered inner peripheral surface 32a in which the diameter of the lower end opening is smaller than the diameter of the upper end opening. The tapered inner peripheral surface 32 a of the guide ring 32 is engaged with the side surface 22 f of the tray 22 formed in a tapered shape, so that the tray 22 is placed in a state of being aligned with the dielectric member 30. . Note that the orientation of the tray 22 with respect to the center of the tray 22 in top view (upward view) is aligned based on a characteristic portion (mark) such as a notch 22g formed on the outer periphery of the tray 22 detected by a sensor or the like. The

ステージ２０の誘電体部材３０は、その上面で構成されてトレイ２２を支持するトレイ支持部３０ａと、上面上に形成されて基板Ｗの下面Ｗａが載置される島状（凸状）の基板載置部３０ｂと、トレイ２２の基板支持部２２ｄを収容するための凹部３０ｃとを備える。凹部３０ｃは、基板載置部３０ｂの側壁部３０ｄ（特許請求の範囲に記載の「第２の側壁部」に対応）に形成されている。   The dielectric member 30 of the stage 20 includes a tray support portion 30a configured on the upper surface thereof to support the tray 22, and an island-shaped (convex) substrate formed on the upper surface and on which the lower surface Wa of the substrate W is placed. The mounting part 30b and the recessed part 30c for accommodating the board | substrate support part 22d of the tray 22 are provided. The recessed part 30c is formed in the side wall part 30d (corresponding to the “second side wall part” recited in the claims) of the substrate mounting part 30b.

図３および図４Ｂは、ガイドリング３２によって位置合わせされた状態でトレイ２２が誘電体部材３０に載置された状態（例えば基板Ｗのプラズマ処理時の状態）を示している。   3 and 4B show a state where the tray 22 is placed on the dielectric member 30 while being aligned by the guide ring 32 (for example, a state during plasma processing of the substrate W).

図３に示すようにガイドリング３２によって位置合わせされた状態でトレイ２２が誘電体部材３０に載置された状態のときに、誘電体部材３０のトレイ支持部３０ａが、図４Ｂに示すように、トレイ２２の下面２２ｂを支持するように構成されている。また、誘電体部材３０の基板載置部３０ｂが、トレイ２２の基板収容孔２２ｃに下面２２ｂ側から進入し、基板Ｗの下面Ｗａを支持するように構成されている。すなわち、トレイ２２の基板収容孔２２ｃの内周面と誘電体部材３０の基板載置部３０ｂの側壁部３０ｄと対向する。さらに、誘電体部材３０の溝形状の凹部３０ｃが、トレイ２２の基板支持部２２ｄを収容するように構成されている。   When the tray 22 is placed on the dielectric member 30 while being aligned by the guide ring 32 as shown in FIG. 3, the tray support portion 30a of the dielectric member 30 is as shown in FIG. 4B. The tray 22 is configured to support the lower surface 22b. Further, the substrate mounting portion 30 b of the dielectric member 30 is configured to enter the substrate accommodation hole 22 c of the tray 22 from the lower surface 22 b side and support the lower surface Wa of the substrate W. That is, the inner peripheral surface of the substrate housing hole 22 c of the tray 22 faces the side wall portion 30 d of the substrate mounting portion 30 b of the dielectric member 30. Further, the groove-shaped recess 30 c of the dielectric member 30 is configured to accommodate the substrate support portion 22 d of the tray 22.

トレイ支持部３０ａから基板載置部３０ｂの基板載置面３０ｅまでの距離である基板Ｗの下面Ｗａが載置される基板載置面３０ｅまでの高さは、トレイ支持部３０ａに支持された状態におけるトレイ２２の基板支持部２２ｄが基板載置部３０に載置された状態の基板Ｗの下面Ｗａから離間するような高さに設定されている。   The height from the tray support portion 30a to the substrate placement surface 30e on which the lower surface Wa of the substrate W, which is the distance from the substrate placement portion 30b to the substrate placement surface 30e, is supported by the tray support portion 30a. The height is set such that the substrate support portion 22 d of the tray 22 in the state is separated from the lower surface Wa of the substrate W in a state of being placed on the substrate placement portion 30.

また、ステージ２０は、図４Ａや図４Ｂに示すように、基板載置部３０ｂの基板載置面３０ｅに載置された基板Ｗを静電吸着するためのＥＳＣ電極（静電吸着用電極）３４を有する。ＥＳＣ電極３４は、基板載置部３０ｂの基板載置面３０ｅの近傍に、且つ基板載置面３０ｅと平行に延在するように、基板載置部３０ｂに内蔵されている。このＥＳＣ電極３４に直流電圧を印加するＥＳＣ駆動電源部３６が、ドライエッチング装置１０に設けられている。ＥＳＣ駆動電源部３６がＥＳＣ電極３４に直流電圧を印加することによって静電吸着力が発生し、基板Ｗが、ＥＳＣ電極３４が内蔵された誘電体部材３０の基板載置部３０ｂに保持される。   4A and 4B, the stage 20 is an ESC electrode (electrostatic adsorption electrode) for electrostatically adsorbing the substrate W placed on the substrate placement surface 30e of the substrate placement unit 30b. 34. The ESC electrode 34 is built in the substrate platform 30b so as to extend in the vicinity of the substrate platform 30e of the substrate platform 30b and in parallel with the substrate platform 30e. An ESC drive power supply unit 36 that applies a DC voltage to the ESC electrode 34 is provided in the dry etching apparatus 10. When the ESC drive power supply unit 36 applies a DC voltage to the ESC electrode 34, an electrostatic adsorption force is generated, and the substrate W is held on the substrate mounting unit 30b of the dielectric member 30 in which the ESC electrode 34 is built. .

基板載置部３０ｂに内蔵されているＥＳＣ電極３４はまた、図５に点線に示すように、上方視で、その外縁に規則的な凹凸形状を備える。具体的には、誘電体部材３０の基板載置部３０ｂの側壁部３０ｄとＥＳＣ電極３４の外縁との距離が規則的に変化するように、ＥＳＣ電極３４は形成されている。   The ESC electrode 34 built in the substrate platform 30b also has a regular uneven shape on its outer edge as viewed from above, as shown by the dotted line in FIG. Specifically, the ESC electrode 34 is formed so that the distance between the side wall portion 30d of the substrate mounting portion 30b of the dielectric member 30 and the outer edge of the ESC electrode 34 changes regularly.

図５に示すように、誘電体部材３０の基板載置部３０ｂの側壁部３０ｄは、トレイ２２の基板支持部２２ｃを収容する溝形状の凹部３０ｃを除いて、上方視で基板Ｗの外周端Ｗｃとほぼ重なるように構成されている。   As shown in FIG. 5, the side wall portion 30 d of the substrate mounting portion 30 b of the dielectric member 30 has an outer peripheral end of the substrate W as viewed from above except for a groove-shaped recess 30 c that accommodates the substrate support portion 22 c of the tray 22. It is configured to substantially overlap with Wc.

このような基板載置部３０ｂの基板載置面３０ｄに基板Ｗの下面Ｗａ全体を静電吸着することを考慮すると、ＥＳＣ電極３４は、基板載置部３０ｂの側壁部３０ｄ近傍まで延在する形状が好ましい。しかし、ＥＳＣ電極３４の外縁が基板載置部３０ｂの側壁部３０ｄに接近しすぎると、ＥＳＣ電極３４に流れるもれ電流が側壁部３０ｄを介して基板載置部３０ｂの外部に漏れる（プラズマ処理中にプラズマ側から電子がＥＳＣ電極３４側に侵入してくる）おそれがある。したがって、ＥＳＣ電極３４を流れる電流の側壁部３０ｄを介する基板載置部３０ｂ外部への漏れを抑制しつつ、基板Ｗの下面Ｗａ全体を基板載置部３０ｂの基板載置面３０ｅに静電吸着するために、ＥＳＣ電極３４は、上方視でその外縁が規則的な凹凸形状になるように形成されている。   Considering that the entire lower surface Wa of the substrate W is electrostatically attracted to the substrate placement surface 30d of the substrate placement portion 30b, the ESC electrode 34 extends to the vicinity of the side wall portion 30d of the substrate placement portion 30b. Shape is preferred. However, if the outer edge of the ESC electrode 34 is too close to the side wall 30d of the substrate platform 30b, the leakage current flowing in the ESC electrode 34 leaks to the outside of the substrate platform 30b via the side wall 30d (plasma treatment). The electrons may enter the ESC electrode 34 side from the plasma side). Therefore, the entire lower surface Wa of the substrate W is electrostatically attracted to the substrate placement surface 30e of the substrate placement portion 30b while suppressing leakage of the current flowing through the ESC electrode 34 to the outside of the substrate placement portion 30b via the side wall portion 30d. Therefore, the ESC electrode 34 is formed so that the outer edge thereof has a regular uneven shape when viewed from above.

なお、図５に示すＥＳＣ電極３４の外縁は、トレイ２２の基板支持部２２ｄを収容する溝形状の凹部３０ｃ近傍を除いて、歯車形状であるが、他の形状であってもよい。例えば、波形状であってもよい。   The outer edge of the ESC electrode 34 shown in FIG. 5 has a gear shape except for the vicinity of the groove-shaped recess 30c that accommodates the substrate support portion 22d of the tray 22, but may have another shape. For example, a wave shape may be used.

また、さらにトレイ２２が載置される誘電体部材３０のトレイ支持部３０ａの上端近傍にＥＳＣ電極を配置することにより、トレイ２２を誘電体部材３０に静電吸着するようにしてもよい。それにより、プラズマ処理によって高温状態のトレイ２２から誘電体部材３０に熱がより移動し易くなり、トレイ２２の冷却が促進される。   Furthermore, the tray 22 may be electrostatically attracted to the dielectric member 30 by disposing an ESC electrode near the upper end of the tray support portion 30a of the dielectric member 30 on which the tray 22 is placed. Thereby, heat is more easily transferred from the tray 22 in a high temperature state to the dielectric member 30 by the plasma treatment, and cooling of the tray 22 is promoted.

さらに、ステージ２０は、プラズマ処理中に、誘電体部材３０の基板載置部３０ｂに保持された基板Ｗを冷却するように構成されている。そのために、図５に示すように、基板Ｗを冷却するための伝熱ガスが充満される凹状の伝熱ガス収容部３０ｆが、基板Ｗの下面Ｗａが載置される基板載置部３０ｂの基板載置面３０ｅに形成されている。基板ＷがＥＳＣ電極３４によって基板載置面３０ｂに静電吸着された状態のとき、伝熱ガス収容部３０ｆは密閉状態にされる。具体的には、深さが例えば１００μｍの凹部状の伝熱ガス収容部３０ｆを画定し、基板載置部３０ｂの側壁部３０ｄ、側壁部３０ｊに沿って設けられた二重壁状の二重シール部３０ｇの上端が、基板Ｗの下面Ｗａに当接することにより、伝熱ガス収容部３０ｆは密閉状態にされる。なお、図５において、基板Ｗの下面Ｗａと当接する基板載置面３０ｅの部分がクロスハッチングされている。   Further, the stage 20 is configured to cool the substrate W held on the substrate platform 30b of the dielectric member 30 during the plasma processing. For this purpose, as shown in FIG. 5, the concave heat transfer gas accommodating portion 30f filled with the heat transfer gas for cooling the substrate W is formed on the substrate placement portion 30b on which the lower surface Wa of the substrate W is placed. It is formed on the substrate mounting surface 30e. When the substrate W is electrostatically attracted to the substrate placement surface 30b by the ESC electrode 34, the heat transfer gas storage unit 30f is sealed. Specifically, for example, a recess-like heat transfer gas accommodating portion 30f having a depth of, for example, 100 μm is defined, and a double wall-shaped double portion provided along the side wall portion 30d and the side wall portion 30j of the substrate mounting portion 30b. When the upper end of the seal portion 30g comes into contact with the lower surface Wa of the substrate W, the heat transfer gas storage portion 30f is sealed. In FIG. 5, the portion of the substrate placement surface 30e that contacts the lower surface Wa of the substrate W is cross-hatched.

なお、二重シール部３０ｇによって支持される基板Ｗの下面Ｗａの外周縁部分以外の中央部分を支持するために、伝熱ガス収容部３０ｆに円柱状の複数の突起３０ｈが設けられている。   In order to support a central portion other than the outer peripheral edge portion of the lower surface Wa of the substrate W supported by the double seal portion 30g, a plurality of cylindrical protrusions 30h are provided in the heat transfer gas accommodating portion 30f.

図１に示すように、ステージ２０は、基板Ｗの下面Ｗａと基板載置部３０ｂの基板載置面３０ｅの上端（すなわち、シール部３０ｇの上端）とが当接することによって密閉状態にされた伝熱ガス収容部３０ｆに電熱ガスを充填するための伝熱ガス供給回収路３８を有する。伝熱ガス供給回収路３８は、伝熱ガス収容部３０ｆに充填する伝熱ガス量を制御する伝熱ガス制御部４０に接続されている。   As shown in FIG. 1, the stage 20 is hermetically sealed by contacting the lower surface Wa of the substrate W and the upper end of the substrate placement surface 30e of the substrate placement portion 30b (that is, the upper end of the seal portion 30g). A heat transfer gas supply / recovery path 38 for filling the heat transfer gas storage portion 30f with the electric heat gas is provided. The heat transfer gas supply / recovery path 38 is connected to a heat transfer gas control unit 40 that controls the amount of heat transfer gas filled in the heat transfer gas storage unit 30f.

伝熱ガス収容部３０ｆに充填された伝熱ガスを介して、プラズマ処理によって高温状態の基板Ｗから誘電体部材３０に熱が移動する。それにより、基板Ｗが冷却される。   Heat is transferred from the substrate W in a high temperature state to the dielectric member 30 by the plasma processing through the heat transfer gas filled in the heat transfer gas storage unit 30f. Thereby, the substrate W is cooled.

さらにまた、ステージ２０は、誘電体部材３０のトレイ支持部３０ａに載置された状態のトレイ２２を下方から押し上げてトレイ２２とともに基板Ｗを上昇させる複数の押し上げロッド４２を有する。複数の押し上げロッド４２を上下方向に進退させる駆動機構４４が設けられている。   Furthermore, the stage 20 has a plurality of push-up rods 42 that push up the tray 22 placed on the tray support portion 30 a of the dielectric member 30 from below and lift the substrate W together with the tray 22. A drive mechanism 44 that moves the plurality of push-up rods 42 up and down is provided.

トレイ搬送機構（図示せず）によってプラズマ処理される前の基板Ｗを収容した状態のトレイ２２がチャンバ１２内に搬入されるとき、駆動機構４４は、押し上げロッド４２の先端が誘電体部材３０の上面（トレイ支持部３０ａ）から突出するように押し上げロッド４２を上方向に前進させる。トレイ搬送機構が押し上げロッド４２の先端にトレイ２２を載置すると、駆動機構４４は、押し上げロッド４２をステージ２０の誘電体部材３０内に後退させる。これにより、トレイ２２が誘電体部材３０のトレイ支持部３０ａ上に載置され、基板Ｗが基板載置部３０ｂ上に載置される。   When the tray 22 in a state where the substrate W before the plasma processing is accommodated by the tray transport mechanism (not shown) is carried into the chamber 12, the drive mechanism 44 has the tip of the push-up rod 42 of the dielectric member 30. The push-up rod 42 is advanced upward so as to protrude from the upper surface (tray support portion 30a). When the tray transport mechanism places the tray 22 on the tip of the push-up rod 42, the drive mechanism 44 retracts the push-up rod 42 into the dielectric member 30 of the stage 20. As a result, the tray 22 is placed on the tray support portion 30a of the dielectric member 30, and the substrate W is placed on the substrate placement portion 30b.

プラズマ処理された後の基板Ｗを収容した状態のトレイ２２がトレイ搬送機構（図示せず）によってチャンバ１２内から搬出される動作のとき、駆動機構４４は、押し上げロッド４２を上方向に前進させることによってトレイ２２をステージ２０の誘電体部材３０から離間させた後、トレイ搬送機構がトレイ２２を回収する高さに上昇させる。   When the tray 22 in a state where the substrate W after the plasma processing is accommodated is carried out of the chamber 12 by a tray transport mechanism (not shown), the drive mechanism 44 advances the push-up rod 42 upward. Thus, after separating the tray 22 from the dielectric member 30 of the stage 20, the tray transport mechanism raises the tray 22 to a height at which the tray 22 is recovered.

加えて、ステージ２０は、図１に示すように、誘電体部材３０の下方に配置されて、バイアス電圧が印加される下部電極として機能する金属ブロック４６と、誘電体部材３０と金属ブロック４６との外周を覆う絶縁部材４８と、絶縁部材４８の外周を覆う金属製のシールド部材４７とを有する。   In addition, as shown in FIG. 1, the stage 20 is disposed below the dielectric member 30 and functions as a lower electrode to which a bias voltage is applied, and the dielectric member 30 and the metal block 46. An insulating member 48 that covers the outer periphery of the insulating member 48, and a metal shield member 47 that covers the outer periphery of the insulating member 48.

ステージ２０の金属ブロック４６は、ＩＣＰコイル１６と協働してチャンバ１２内にて基板Ｗのプラズマ処理を実行するための下部電極であって、マッチング回路を備える第２の高周波電源部４９に電気的に接続されている。第２の高周波電源部４９は、金属ブロック４６にバイアス電圧を印加する。   The metal block 46 of the stage 20 is a lower electrode for performing plasma processing of the substrate W in the chamber 12 in cooperation with the ICP coil 16, and is electrically connected to the second high-frequency power supply unit 49 including a matching circuit. Connected. The second high frequency power supply unit 49 applies a bias voltage to the metal block 46.

また、誘電体部材３０が上部に配置された金属ブロック４６内には、金属ブロック４６を冷却するための冷媒が流れる冷媒流路４６ａが形成されている。冷却ユニット５４が、温度調節された冷媒を金属ブロック４６の冷媒流路４６ａに供給する。これにより、ステージ２０の誘電体部材３０上に載置される基板Ｗとトレイ２２とが冷却される。   In addition, a coolant channel 46 a through which a coolant for cooling the metal block 46 flows is formed in the metal block 46 in which the dielectric member 30 is disposed above. The cooling unit 54 supplies the temperature-adjusted refrigerant to the refrigerant channel 46 a of the metal block 46. Thereby, the substrate W and the tray 22 placed on the dielectric member 30 of the stage 20 are cooled.

このようなドライエッチング装置１０によれば、基板Ｗはトレイ２２に収容された状態で、チャンバ1２内に搬入され、ステージ２０に載置される。具体的には、図４Ｂに示すように、基板Ｗは、トレイ支持部３０ａに載置されたトレイ２２と離間した状態で、誘電体部材３０の基板載置部３０ｂ上に載置される。   According to such a dry etching apparatus 10, the substrate W is carried into the chamber 12 while being accommodated in the tray 22 and placed on the stage 20. Specifically, as shown in FIG. 4B, the substrate W is placed on the substrate placement portion 30b of the dielectric member 30 in a state of being separated from the tray 22 placed on the tray support portion 30a.

誘電体部材３０の基板載置部３０ｂに載置された基板Ｗは、ＥＳＣ駆動電源部３６より直流電圧が印加されたＥＳＣ電極３４によって発生した静電吸着力により、基板載置部３０ｂに吸着保持される。基板Ｗは、基板載置部３０ｂに吸着保持された状態で、且つ圧力制御部２８によって減圧された状態のチャンバ１２内でプラズマ処理される。   The substrate W placed on the substrate platform 30b of the dielectric member 30 is attracted to the substrate platform 30b by the electrostatic attraction force generated by the ESC electrode 34 to which a DC voltage is applied from the ESC drive power source 36. Retained. The substrate W is subjected to plasma processing in the chamber 12 in a state in which the substrate W is sucked and held by the substrate platform 30b and is decompressed by the pressure controller 28.

プラズマ処理された基板Ｗは、押し上げロッド４２によってトレイ２２とともに上昇されてトレイ搬送機構に受け渡され、チャンバ１２内から搬出される。   The plasma-treated substrate W is lifted together with the tray 22 by the push-up rod 42, transferred to the tray transport mechanism, and unloaded from the chamber 12.

ここからは、誘電体部材３０の基板載置部３０ｂの更なる詳細について説明する。   From here, the further detail of the board | substrate mounting part 30b of the dielectric material member 30 is demonstrated.

図７は、トレイ２２の基板支持部２２ｄが位置する部分におけるトレイ２２とステージ２０（誘電体部材３０）の部分拡大断面図である。一方、図８は、トレイ２２の基板支持部２２ｄが位置しない部分におけるトレイ２２とステージ２０（誘電体部材３０）の部分拡大断面図である。   FIG. 7 is a partially enlarged cross-sectional view of the tray 22 and the stage 20 (dielectric member 30) at a portion where the substrate support portion 22d of the tray 22 is located. On the other hand, FIG. 8 is a partially enlarged cross-sectional view of the tray 22 and the stage 20 (dielectric member 30) in a portion where the substrate support portion 22d of the tray 22 is not located.

基板載置部３０ｂの上面（基板載置面３０ｅ）に基板Ｗが載置されている状態を図示している図７や図８に示すように、誘電体部材３０の基板載置部３０ｂの側壁部３０ｄは、トレイ２２の下面２２ｂを支持する誘電体部材３０の上面３０ａから上方に基板Ｗ側に向かって延在しているが、基板Ｗの下面Ｗａまでは延在していない。   As shown in FIG. 7 and FIG. 8 illustrating a state in which the substrate W is placed on the upper surface (substrate placement surface 30e) of the substrate placement portion 30b, the substrate placement portion 30b of the dielectric member 30 The side wall portion 30 d extends upward from the upper surface 30 a of the dielectric member 30 that supports the lower surface 22 b of the tray 22 toward the substrate W side, but does not extend to the lower surface Wa of the substrate W.

具体的には、二重シール部３０ｇの外壁部（特許請求の範囲に記載の「第１の側壁部」に対応）３０ｊが、基板載置面３０ｅの上端（すなわち、基板Ｗの下面Ｗａと当接する二重シール部３０ｇの上端）の外縁から下方に延在している。二重シール部３０ｇの外壁部３０ｊは、基板載置面３０ｅの上端から下方側に、例えばｔ＝１００μｍ（４０μｍ〜１５０μｍ）延在している。この二重シール部３０ｇの外壁部３０ｊの下端から側壁部３０ｄの上端に向かって水平に、例えばｄ＝２００〜４００μｍ延在する平面部３０ｋが形成されている。すなわち、基板載置部３０ｂの側壁部３０ｄは、基板載置面３０ｅの上端に比べて低い高さ位置から下方に延在している。   Specifically, the outer wall portion (corresponding to the “first side wall portion” described in the claims) 30j of the double seal portion 30g is the upper end of the substrate mounting surface 30e (that is, the lower surface Wa of the substrate W). It extends downward from the outer edge of the abutting double seal portion 30g). The outer wall portion 30j of the double seal portion 30g extends, for example, t = 100 μm (40 μm to 150 μm) from the upper end of the substrate placement surface 30e. A flat portion 30k extending, for example, d = 200 to 400 μm is formed horizontally from the lower end of the outer wall portion 30j of the double seal portion 30g toward the upper end of the side wall portion 30d. That is, the side wall portion 30d of the substrate platform 30b extends downward from a lower position than the upper end of the substrate platform 30e.

別の観点から見れば、基板Ｗが載置された状態の基板載置部３０ｂの上方から見た場合に、すなわち図５に示すように、基板載置部３０ｂの中心部３０ｍに対して、多重シール部である二重シール部３０ｇの外壁部（第１の側壁部）３０ｊが、基板Ｗの外周端Ｗｃや基板載置部３０ｂの側壁部（第２の側壁部）３０ｄより内側（基板Ｗの中心側）に位置する。   From another viewpoint, when viewed from above the substrate platform 30b on which the substrate W is placed, that is, as shown in FIG. 5, with respect to the central portion 30m of the substrate platform 30b, The outer wall portion (first sidewall portion) 30j of the double seal portion 30g, which is a multiple seal portion, is located on the inner side (substrate) than the outer peripheral end Wc of the substrate W or the sidewall portion (second sidewall portion) 30d of the substrate mounting portion 30b. (Center side of W).

このように誘電体部材３０の基板載置部３０ｂを構成する理由について、図９を参照しながら説明する。   The reason why the substrate mounting portion 30b of the dielectric member 30 is thus configured will be described with reference to FIG.

図９は、基板Ｗが載置された状態の比較例および実施例の誘電体部材の基板載置部の部分拡大断面図を示している。   FIG. 9 is a partial enlarged cross-sectional view of the substrate placement portion of the dielectric member of the comparative example and the example in the state where the substrate W is placed.

図９（ａ）に示す比較例の基板載置部３０ｂ’の側壁部３０ｄ’は、誘電体部材３０’のトレイ支持部３０ａ’から基板載置面３０ｅ’の上端の外縁（二重シール部３０ｇ’の上端の外縁）まで延在している。すなわち、側壁部３０ｄ’の上部が二重シール部３０ｇの外壁部を構成し、側壁部３０ｄ’の上端が基板Ｗの下面Ｗａに達している。   The side wall portion 30d ′ of the substrate mounting portion 30b ′ of the comparative example shown in FIG. 9A is an outer edge (double seal portion) from the tray support portion 30a ′ of the dielectric member 30 ′ to the upper end of the substrate mounting surface 30e ′. It extends to the outer edge of the upper end of 30 g ′. That is, the upper part of the side wall part 30d 'constitutes the outer wall part of the double seal part 30g, and the upper end of the side wall part 30d' reaches the lower surface Wa of the substrate W.

このような比較例の基板載置部３０ｂ’の場合、図９（ａ）に示すように、プラズマ処理中、トレイ２２の上面２２ａと基板Ｗの外周端Ｗｃとの隙間から侵入する反応生成物Ｄが側壁部３０ｄ’に対して、基板Ｗの外周端Ｗｃにまでおよんで堆積する可能性がある。   In the case of such a substrate mounting portion 30b ′ of the comparative example, as shown in FIG. 9A, a reaction product that enters from the gap between the upper surface 22a of the tray 22 and the outer peripheral edge Wc of the substrate W during the plasma processing. There is a possibility that D accumulates on the side wall portion 30d ′ up to the outer peripheral edge Wc of the substrate W.

ここで言う反応生成物Ｄは、プラズマ処理中に発生する、例えば、エッチングガスまたは基板Ｗの上面Ｗｂ上の薄膜やマスクに含まれる成分由来の反応生成物を言う。また、トレイ２２がプラズマに曝されて消耗する場合、その消耗によって発生するトレイ２２の含有成分由来の反応生成物も含まれる。   The reaction product D mentioned here refers to a reaction product derived during the plasma processing, for example, from an etching gas or a component contained in a thin film or mask on the upper surface Wb of the substrate W. In addition, when the tray 22 is consumed by being exposed to plasma, reaction products derived from the components contained in the tray 22 generated by the consumption are also included.

このような反応生成物Ｄは、基板Ｗが載置された基板載置部３０ｂ（３０ｂ’）の側壁部３０ｄ（３０ｄ’）に沿って堆積しやすい。   Such a reaction product D is likely to be deposited along the side wall portion 30d (30d ') of the substrate platform 30b (30b') on which the substrate W is placed.

図９（ａ）に示すように、比較例の基板載置部３０ｂ’の側壁部３０ｄ’に沿って堆積した反応生成物Ｄが基板Ｗの外周端Ｗｃまで達すると、その反応生成物Ｄが基板載置面３０ｅ’の上端（二重シール部３０ｇ’の上端）と基板Ｗの下面Ｗａとの間の接触領域に入りこむことがある。基板載置面３０ｅ’の上端と基板Ｗの下面Ｗａとの間の接触領域に反応生成物Ｄが入り込むと、基板Ｗが基板載置面３０ｅ’に対して適切に静電保持されなくなる。その結果、例えば、基板載置面３０ｅ’の上端と基板Ｗの下面Ｗａとの間から伝熱ガス収容部３０ｆ’に充満された伝熱ガスが漏れ、基板Ｗの冷却性が低下する可能性がある。   As shown in FIG. 9A, when the reaction product D deposited along the side wall portion 30d ′ of the substrate mounting portion 30b ′ of the comparative example reaches the outer peripheral edge Wc of the substrate W, the reaction product D is The contact area between the upper end of the substrate placement surface 30e ′ (the upper end of the double seal portion 30g ′) and the lower surface Wa of the substrate W may be entered. When the reaction product D enters the contact region between the upper end of the substrate placement surface 30e 'and the lower surface Wa of the substrate W, the substrate W is not appropriately electrostatically held with respect to the substrate placement surface 30e'. As a result, for example, the heat transfer gas filled in the heat transfer gas storage portion 30f ′ may leak from between the upper end of the substrate placement surface 30e ′ and the lower surface Wa of the substrate W, and the cooling performance of the substrate W may be reduced. There is.

この対処として、図９（ｂ）に示す本実施の形態（実施例）の誘電体部材３０の基板載置部３０ｂの側壁部３０ｄは、基板Ｗの下面Ｗａまで延在していない（そのように基板載置部３０ｂが構成されている）。   As a countermeasure, the side wall portion 30d of the substrate mounting portion 30b of the dielectric member 30 of the present embodiment (example) shown in FIG. 9B does not extend to the lower surface Wa of the substrate W (such as that). The substrate mounting portion 30b is configured in the above.

図９（ｂ）に示すように、実施例の基板載置部３０ｂの側壁部３０ｄに沿って堆積した反応生成物Ｄは、側壁部３０ｄが基板Ｗの下面Ｗａまで延在していないために、基板Ｗの外周端Ｗｃに達しない。また、基板載置部３０ｂに載置された基板Ｗの下面Ｗａと基板Ｗの外周側で接触する基板載置部３０ｂの二重シール部３０ｇの外壁部３０ｊに対して基板載置部３０ｂの側壁部３０ｄが微小な高さｔおよび微小な奥行きｄを備える微小な空間を介して離れているために、反応生成物Ｄの侵入に対して抵抗（損失）が大きくなり、基板載置面３０ｅの上端（二重シール部３０ｇの上端）と基板Ｗの下面Ｗａとの間の接触領域に反応生成物Ｄが入り込みにくい。したがって、図９（ｂ）に示す実施例の基板載置部３０ｂにおいては、図９（ａ）に示す側壁部３０ｄ’が基板Ｗの下面Ｗａまで延在する構成の比較例の基板載置部３０ｂ’に比べて、基板載置面３０ｅの上端と基板Ｗの下面Ｗａとの間の接触領域に、プラズマ処理中に発生する反応生成物Ｄが入り込むことが抑制される。   As shown in FIG. 9B, the reaction product D deposited along the side wall portion 30d of the substrate mounting portion 30b of the embodiment is because the side wall portion 30d does not extend to the lower surface Wa of the substrate W. The outer peripheral edge Wc of the substrate W is not reached. In addition, the substrate mounting portion 30b is opposed to the outer wall portion 30j of the double seal portion 30g of the substrate mounting portion 30b that contacts the lower surface Wa of the substrate W placed on the substrate mounting portion 30b on the outer peripheral side of the substrate W. Since the side wall portion 30d is separated through a minute space having a minute height t and a minute depth d, resistance (loss) to the intrusion of the reaction product D increases, and the substrate placement surface 30e. Reaction product D is unlikely to enter the contact region between the upper end of the substrate (the upper end of the double seal portion 30g) and the lower surface Wa of the substrate W. Therefore, in the substrate platform 30b of the embodiment shown in FIG. 9B, the side wall 30d ′ shown in FIG. 9A extends to the lower surface Wa of the substrate W. Compared to 30b ′, the reaction product D generated during the plasma processing is suppressed from entering the contact region between the upper end of the substrate placement surface 30e and the lower surface Wa of the substrate W.

なお、反応生成物Ｄは、いずれは二重シール部３０ｇの外壁部３０ｊに沿って堆積し、二重シール部３０ｇの上端と基板Ｗの下面Ｗａとの間の接触領域に入り込む。したがって、反応生成物Ｄを基板載置部３０ｂから取り除くメンテナンスを実施する必要がある。しかしながら、そのメンテナンスの周期は、図９（ａ）に示す比較例のように基板載置部３０ｂ’の側壁部３０ｄ’が基板Ｗの下面Ｗａまで延在している場合に比べて長い。すなわち、メンテナンスの頻度が低い。   The reaction product D is deposited along the outer wall portion 30j of the double seal portion 30g, and enters the contact region between the upper end of the double seal portion 30g and the lower surface Wa of the substrate W. Therefore, it is necessary to perform maintenance for removing the reaction product D from the substrate platform 30b. However, the maintenance cycle is longer than that in the case where the side wall 30d 'of the substrate platform 30b' extends to the lower surface Wa of the substrate W as in the comparative example shown in FIG. That is, the frequency of maintenance is low.

本実施の形態によれば、誘電体部材３０の基板載置部３０ｂの基板載置面３０ｅの上端と基板Ｗの下面Ｗａとの間の接触領域に、プラズマ処理中に発生する反応生成物が入り込むことが抑制される。   According to the present embodiment, the reaction product generated during the plasma processing is generated in the contact region between the upper end of the substrate placement surface 30e of the substrate placement portion 30b of the dielectric member 30 and the lower surface Wa of the substrate W. Intrusion is suppressed.

上述の実施の形態を挙げて本発明を説明したが、本発明は上述の実施の形態に限定されない。   Although the present invention has been described with reference to the above-described embodiment, the present invention is not limited to the above-described embodiment.

例えば、本発明に係る、基板が載置される誘電体部材の基板載置部は、様々な形態が考えられる。   For example, various forms of the substrate mounting portion of the dielectric member on which the substrate is mounted according to the present invention can be considered.

図１０は、別の実施の形態の誘電体部材の基板載置部の部分拡大断面図である。図１０に示す誘電体部材の基板載置部１３０ｂにおいては、基板載置面１３０ｅの上端の外縁から下方に延在する側壁部（すなわち二重シール部１３０ｇの外壁部１３０ｊ）の下端から側壁部１３０ｄの上端に向かいつつ下方に延在する傾斜部（スロープ部）１３０ｋが形成されている。このようなスロープ部１３０ｋは、例えば図７に示す基板載置部３０ｂの平面部３０ｋのように水平に延在する平面に比べて、側壁部１３０ｄに沿って堆積する反応生成物が、基板載置面１３０ｅの上端（二重シール部１３０ｇの上端）と基板Ｗの下面Ｗａとの間の外壁部１３０ｊの上端の接触領域に入り込みにくい。   FIG. 10 is a partial enlarged cross-sectional view of a substrate mounting portion of a dielectric member according to another embodiment. In the substrate mounting portion 130b of the dielectric member shown in FIG. 10, the side wall portion extends from the lower end of the side wall portion (that is, the outer wall portion 130j of the double seal portion 130g) extending downward from the outer edge at the upper end of the substrate mounting surface 130e. An inclined portion (slope portion) 130k extending downward toward the upper end of 130d is formed. Compared to a plane extending horizontally, such as the plane portion 30k of the substrate platform 30b shown in FIG. 7, for example, the slope 130k has a reaction product deposited along the side wall portion 130d. It is difficult to enter the contact region of the upper end of the outer wall portion 130j between the upper end of the placement surface 130e (the upper end of the double seal portion 130g) and the lower surface Wa of the substrate W.

また、図１１は、さらに別の実施の形態の誘電体部材の基板載置部の部分拡大図である。図１１に示す誘電体部材の基板載置部２３０ｂにおいては、基板載置面２３０ｅの上端の外縁から下方に延在する側壁部（すなわち、二重シール部２３０ｇの外壁部２３０ｊ）が湾曲部を備えている。具体的には、外壁部２３０ｊは、基板載置部２３０ｂの内部側に向かって凸状に湾曲する湾曲部を備える。このように湾曲部を備える外壁部２３０ｊも、例えば図７に示す基板載置部３０ｂの平面部３０ｋのように水平に延在する平面に比べて、側壁部２３０ｄに沿って堆積する反応生成物が、基板載置面２３０ｅの上端（二重シール部２３０ｇの上端）と基板Ｗの下面Ｗａとの間の接触領域に入り込みにくい。   Moreover, FIG. 11 is the elements on larger scale of the board | substrate mounting part of the dielectric material member of another embodiment. In the substrate mounting portion 230b of the dielectric member shown in FIG. 11, the side wall portion (that is, the outer wall portion 230j of the double seal portion 230g) extending downward from the outer edge of the upper end of the substrate mounting surface 230e is a curved portion. I have. Specifically, the outer wall portion 230j includes a curved portion that curves in a convex shape toward the inner side of the substrate platform 230b. As described above, the outer wall portion 230j having the curved portion is also deposited on the side wall portion 230d as compared with a flat surface extending horizontally like the flat surface portion 30k of the substrate mounting portion 30b shown in FIG. However, it is difficult to enter the contact region between the upper end of the substrate placement surface 230e (the upper end of the double seal portion 230g) and the lower surface Wa of the substrate W.

このように、本発明に係る誘電体部材の基板載置部は、様々な形態が考えられる。本発明に係る誘電体部材の基板載置部は、広義には、基板の下面が載置される基板載置面と、基板載置面の上端の外縁から下方に延在する第１の側壁部と、第１の側壁部の上端に比べて低い高さ位置から下方に延在する第２の側壁部とを備え、基板が載置された状態の基板載置部を上方から見た場合、基板載置部の中心部３０ｍに対して第１の側壁部が基板の外周端および第２の側壁部より内側に位置するように構成されている。   Thus, various forms can be considered for the substrate mounting portion of the dielectric member according to the present invention. In a broad sense, the substrate mounting portion of the dielectric member according to the present invention includes a substrate mounting surface on which the lower surface of the substrate is mounted, and a first side wall extending downward from the outer edge of the upper end of the substrate mounting surface. And a second side wall portion extending downward from a lower height position than the upper end of the first side wall portion, and the substrate placement portion in a state where the substrate is placed is viewed from above. The first side wall portion is configured to be positioned on the inner side of the outer peripheral end of the substrate and the second side wall portion with respect to the central portion 30m of the substrate mounting portion.

また、トレイの上面にカバー部材を設けてもよい。図１２に示すトレイ１２２は、基板Ｗを支持する本体部５０と、本体部５０の上部を覆うカバー部５２から構成されている。なお、図１２では示されていないが、図２に示すトレイ２２の基板支持部２２ｄと同様に基板Ｗの下面Ｗａの外周縁部分を支持する基板支持部が、トレイ１２２の本体部５０の貫通孔５０ａの内周面に設けられている。   Further, a cover member may be provided on the upper surface of the tray. The tray 122 illustrated in FIG. 12 includes a main body 50 that supports the substrate W and a cover 52 that covers the upper portion of the main body 50. Although not shown in FIG. 12, the substrate support portion that supports the outer peripheral edge portion of the lower surface Wa of the substrate W passes through the main body portion 50 of the tray 122 in the same manner as the substrate support portion 22 d of the tray 22 shown in FIG. 2. It is provided on the inner peripheral surface of the hole 50a.

また、カバー部５２は、基板Ｗが通過可能な貫通孔５２aを備える。このカバー部５２の貫通孔５２ａと本体部５０の貫通孔５０ａとが、トレイ１２２の基板収容孔１２２ｃを構成している。   Further, the cover part 52 includes a through hole 52a through which the substrate W can pass. The through hole 52 a of the cover part 52 and the through hole 50 a of the main body part 50 constitute a substrate accommodation hole 122 c of the tray 122.

図１２に示すトレイ１２２のカバー部５２は、石英や窒化シリコン（ＳｉＮ）などの炭素成分を含有しない材料から作製されている。一方、本体部５０は、高硬度、高剛性で薄型化が可能な炭化シリコン（ＳｉＣ）などの炭素成分を含有する材料から作製されている。   The cover portion 52 of the tray 122 shown in FIG. 12 is made of a material that does not contain a carbon component, such as quartz or silicon nitride (SiN). On the other hand, the main body 50 is made of a material containing a carbon component such as silicon carbide (SiC) that can be thinned with high hardness and high rigidity.

基板Ｗを支持する本体部５０をカバー部５２が覆うことにより、本体部５０がプラズマに曝されて消耗することが抑制される。また、プラズマに本体部５０が曝されることによって発生する、本体部５０の炭素成分を含有する反応生成物の発生が抑制される。炭素成分を含有する反応性生物が基板Ｗの上面Ｗｂ（例えば、トレイ１２２近傍の上面Ｗｂの外周縁部分）に付着すると、その上面Ｗｂの部分のプラズマ処理中における対マスク選択比が増大し、その結果としてプラズマ処理後の基板Ｗに形状異常が発生し易くなる。一方、カバー部５２がプラズマに曝されて消耗しても、炭素成分を含有する反応生成物は発生しない。したがって、図１２に示すトレイ１２２において基板Ｗを支持して炭素成分を含有する本体部５０が炭素成分を含有しないカバー部５２に覆われるように、基板を支持するトレイが炭素成分を含有する場合、炭素成分を含有しないカバー部材で覆うのが好ましい。   Covering the main body 50 that supports the substrate W with the cover 52 prevents the main body 50 from being exposed to plasma and being consumed. Moreover, generation | occurrence | production of the reaction product containing the carbon component of the main-body part 50 which generate | occur | produces when the main-body part 50 is exposed to plasma is suppressed. When the reactive organism containing the carbon component adheres to the upper surface Wb of the substrate W (for example, the outer peripheral edge portion of the upper surface Wb in the vicinity of the tray 122), the mask selection ratio during the plasma processing of the portion of the upper surface Wb increases. As a result, shape abnormality is likely to occur in the substrate W after the plasma processing. On the other hand, even if the cover part 52 is exposed to plasma and consumed, no reaction product containing a carbon component is generated. Accordingly, when the tray supporting the substrate contains the carbon component such that the main body portion 50 supporting the substrate W and containing the carbon component is covered with the cover portion 52 not containing the carbon component in the tray 122 shown in FIG. It is preferable to cover with a cover member that does not contain a carbon component.

なお、図１２に示すトレイ１２２のカバー部５２の貫通孔５２ａは、基板Ｗが通過できる可能な限り最小の大きさに構成するのが好ましい。これにより、図１２に示すように、基板Ｗの外周端Ｗｃとカバー部５２の貫通孔５２ａの内周面との間の距離δ１（例えば０．１〜０．２ｍｍ）が小さくなる。それにより、基板Ｗの外周端Ｗｃとカバー部５２の貫通孔５２ａの内周面との間を反応生成物が通過しにくくなり、反応生成物が基板載置部３０ｂの側壁部３０ｄに沿って堆積することが抑制される。   Note that the through hole 52a of the cover portion 52 of the tray 122 shown in FIG. 12 is preferably configured to be as small as possible so that the substrate W can pass therethrough. Accordingly, as shown in FIG. 12, the distance δ1 (for example, 0.1 to 0.2 mm) between the outer peripheral end Wc of the substrate W and the inner peripheral surface of the through hole 52a of the cover portion 52 is reduced. This makes it difficult for the reaction product to pass between the outer peripheral edge Wc of the substrate W and the inner peripheral surface of the through hole 52a of the cover portion 52, and the reaction product passes along the side wall portion 30d of the substrate mounting portion 30b. Accumulation is suppressed.

さらに、図２、図４Ａ、および図４Ｂに示すように、トレイ２２や基板Ｗが載置されるステージ２０の誘電体部材３０は、トレイ２２の下面Ｗａが載置されるトレイ支持部３０ａの上面側に島状（凸状）の基板載置部３０ｂを設けた形状である。本発明は、誘電体部材の形状を、これに限らない。   Furthermore, as shown in FIGS. 2, 4A, and 4B, the dielectric member 30 of the stage 20 on which the tray 22 and the substrate W are placed is formed on the tray support portion 30a on which the lower surface Wa of the tray 22 is placed. In this shape, an island-like (convex) substrate placement portion 30b is provided on the upper surface side. In the present invention, the shape of the dielectric member is not limited to this.

例えば、図１３および図１４に示す誘電体部材は、トレイ２２２が載置されるトレイ支持部３３０ａと基板Ｗが載置される基板載部３３０ｂの基板載置面３３０ｅとがともに、同一高さに位置するように構成されている点で、図４Ａおよび図４Ｂに示す誘電体部材３０と異なる。   For example, the dielectric member shown in FIGS. 13 and 14 has the same height for both the tray support portion 330a on which the tray 222 is placed and the substrate placement surface 330e of the substrate placement portion 330b on which the substrate W is placed. It differs from the dielectric member 30 shown to FIG. 4A and FIG. 4B by the point comprised so that it may be located in FIG.

このような誘電体部材に対応するトレイ２２２において、基板収容孔２２２ｃに収容された基板Ｗの下面Ｗａの外周縁部分を支持する複数の基板支持部２２２ｄは、トレイ２２２の本体部２５０の下面２２２ｂに取り付けられている。具体的には、複数の基板支持部２２２ｄは、トレイ２２２の本体部２５０の貫通孔２５０ａの下方側開口の縁に沿って、トレイ２２２の本体部２５０の下面２２２ｂに構成されている（取り付けられている）。   In the tray 222 corresponding to such a dielectric member, the plurality of substrate support portions 222 d that support the outer peripheral edge portion of the lower surface Wa of the substrate W accommodated in the substrate accommodation hole 222 c are the lower surfaces 222 b of the main body portion 250 of the tray 222. Is attached. Specifically, the plurality of substrate support portions 222 d are configured (attached) to the lower surface 222 b of the main body portion 250 of the tray 222 along the edge of the lower opening of the through hole 250 a of the main body portion 250 of the tray 222. ing).

トレイ２２２の下面２２２ｂを誘電体部材の上面（トレイ支持部３３０ａ）に当接させるために、トレイ２２２の下面２２２ｂに取り付けられた基板支持部２２２ｄを収容することができる凹部３３０ｃが誘電体部材の上面側に形成されている。   In order to bring the lower surface 222b of the tray 222 into contact with the upper surface (tray support portion 330a) of the dielectric member, a recess 330c that can accommodate the substrate support portion 222d attached to the lower surface 222b of the tray 222 is formed of the dielectric member. It is formed on the upper surface side.

また、図１４に示すように、誘電体部材の基板載置部３３０ｂは、トレイ２２２の基板支持部２２２ｄを収容するための凹部３３０ｃを画定する壁の一部として機能する側壁部３３０ｄを備える。この側壁部３３０ｄは、基板Ｗの下面Ｗａまで延在していない。   Further, as shown in FIG. 14, the substrate mounting portion 330 b of the dielectric member includes a side wall portion 330 d that functions as a part of a wall that defines a recess 330 c for accommodating the substrate support portion 222 d of the tray 222. The side wall portion 330d does not extend to the lower surface Wa of the substrate W.

さらに、基板載置部３３０ｂの基板載置面３３０ｅに、多重シール部である二重シール部３３０ｇが設けられている。基板載置面３３０の上端の外縁から下方に延在する側壁部（二重シール部３３０ｇの外壁部）３３０ｊの下端と側壁部３３０ｄの上端との間に、平面部３３０ｋが形成されている。   Further, a double seal portion 330g, which is a multiple seal portion, is provided on the substrate placement surface 330e of the substrate placement portion 330b. A flat surface portion 330k is formed between the lower end of the side wall portion (outer wall portion of the double seal portion 330g) 330j extending downward from the outer edge of the upper end of the substrate placement surface 330 and the upper end of the side wall portion 330d.

このような誘電体部材の場合、プラズマ処理中に発生する反応生成物が、基板Ｗの外周端Ｗｃと貫通孔２５０ａの内周面との間の微小な距離δ１の隙間を通過して凹部３３０ｃ内に入り、基板載置部３３０ｂの側壁部３３０ｄに沿って堆積する場合であっても、反応生成物が堆積する側壁部３３０ｄから微小な高さｔおよび微小な奥行きｄを備える微小な空間を介して離れているため、基板載置面３３０ｅの上端（すなわち二重シール部３０ｇの上端）と基板Ｗの下面Ｗａとの間の接触領域に反応生成物がさらに入り込みにくい（側壁部３３０ｄが基板Ｗの下面Ｗａまで延在する場合に比べて）。   In the case of such a dielectric member, the reaction product generated during the plasma processing passes through a gap of a minute distance δ1 between the outer peripheral end Wc of the substrate W and the inner peripheral surface of the through hole 250a, and the recess 330c. Even when entering inside and depositing along the side wall part 330d of the substrate mounting part 330b, a minute space having a minute height t and a minute depth d from the side wall part 330d where the reaction product is deposited. Therefore, the reaction product is more difficult to enter the contact region between the upper end of the substrate placement surface 330e (that is, the upper end of the double seal portion 30g) and the lower surface Wa of the substrate W (the side wall portion 330d is the substrate). (Compared to the case of extending to the lower surface Wa of W).

さらにまた、上述の実施の形態の場合、誘電体部材３０の基板載置部３０ｂの二重シール部３０ｇは、図５に示すように上方視で基板載置部３０ｂの側壁部３０ｄと二重シール部３０ｇの外壁部３０ｊとの間の距離が全体にわたって等しくなるように形成され、そのために二重シール部３０ｇの形状は複雑であるが、本発明はこれに限らない。   Furthermore, in the case of the above-described embodiment, the double seal portion 30g of the substrate mounting portion 30b of the dielectric member 30 is doubled with the side wall portion 30d of the substrate mounting portion 30b as viewed from above as shown in FIG. The distance between the seal portion 30g and the outer wall portion 30j is formed to be equal throughout, and therefore the shape of the double seal portion 30g is complicated, but the present invention is not limited to this.

例えば、図１５に示す別の実施の形態の誘電体部材４３０の基板載置部４３０ｂは、上方視で円形状の二重シール部４３０ｇを有する。円形状の二重シール部４３０ｇの外壁部４３０ｊは、トレイ２２の基板支持部２２ｄを収容する溝形状の凹部４３０ｃより基板載置部４３０ｂの中心部４３０ｍ側に位置する。この場合、凹部４３０ｃとそれ以外の部分において側壁部４３０ｄと二重シール部４３０ｇの外壁部４３０ｊとの間の距離が異なるものの、二重シール部４３０ｇの作製は、図５に示す誘電体部材３０の基板載置部３０ｂの二重シール部３０ｇの作製に比べて容易である。   For example, the substrate mounting portion 430b of the dielectric member 430 of another embodiment shown in FIG. 15 has a circular double seal portion 430g as viewed from above. The outer wall portion 430j of the circular double seal portion 430g is located closer to the center portion 430m of the substrate placement portion 430b than the groove-shaped recess portion 430c that accommodates the substrate support portion 22d of the tray 22. In this case, although the distance between the side wall part 430d and the outer wall part 430j of the double seal part 430g is different in the concave part 430c and other parts, the production of the double seal part 430g is performed on the dielectric member 30 shown in FIG. This is easier than the production of the double seal portion 30g of the substrate placement portion 30b.

これに関連する別の実施の形態の誘電体部材５３０の基板載置部５３０ｂを図１６に示す。図１６に示すように、トレイ２２の基板支持部２２ｄを収容する溝形状の凹部５３０ｃによる抵抗（損失）により、具体的には、例えば溝形状の凹部５３０ｃが基板載置部５３０ｂの中心部５３０ｍに向かって十分に窪んだ形状であれば、凹部５３０ｃ内の側壁部５３０ｄと円形状の二重シール部５３０ｇの外壁部５３０ｊは上方視で同じ位置にあってもよい。すなわち、凹部５３０ｃが基板載置部５３０ｂの中心部５３０ｍに向かって十分に窪んでいれば、凹部５３０ｃの奥側の側壁部５３０ｄまでプラズマ処理によって発生する反応生成物が到達し難いため、凹部５３０ｃ内の側壁部５３０ｄと二重シール部５３０ｇの外壁部５３０ｊは上方視で同じ位置にすることができる。   FIG. 16 shows a substrate mounting portion 530b of a dielectric member 530 according to another embodiment related to this. As shown in FIG. 16, the resistance (loss) due to the groove-shaped concave portion 530c that accommodates the substrate support portion 22d of the tray 22, specifically, for example, the groove-shaped concave portion 530c is the central portion 530m of the substrate mounting portion 530b. As long as the shape is sufficiently depressed toward the top, the side wall portion 530d in the recess 530c and the outer wall portion 530j of the circular double seal portion 530g may be at the same position as viewed from above. That is, if the concave portion 530c is sufficiently depressed toward the central portion 530m of the substrate mounting portion 530b, the reaction product generated by the plasma treatment hardly reaches the side wall portion 530d on the back side of the concave portion 530c. The inner side wall portion 530d and the outer wall portion 530j of the double seal portion 530g can be in the same position as viewed from above.

最後に、上述の実施の形態の場合、トレイを用いて基板を誘電体部材の基板載置部の基板載置面上に載置しているが、本発明はこれに限らない。例えば、トレイを用いずに基板を誘電体部材の基板載置部の基板載置面上に載置してもよい。例えば、搬送ロボットが基板を保持し、保持する基板を誘電体部材の基板載置部の基板載置面上に載置するように構成してもよい。   Finally, in the case of the above-described embodiment, the substrate is placed on the substrate placement surface of the substrate placement portion of the dielectric member using the tray, but the present invention is not limited to this. For example, the substrate may be placed on the substrate placement surface of the substrate placement portion of the dielectric member without using the tray. For example, the transfer robot may be configured to hold the substrate and place the held substrate on the substrate placement surface of the substrate placement portion of the dielectric member.

本発明は、誘電体部材の基板載置部の基板載置面に基板を載置し、基板載置部に内蔵された電極によって基板を基板載置部に静電吸着する構成のプラズマ処理装置であれば、適用可能である。   The present invention relates to a plasma processing apparatus having a configuration in which a substrate is placed on a substrate placement surface of a substrate placement portion of a dielectric member, and the substrate is electrostatically attracted to the substrate placement portion by an electrode built in the substrate placement portion. If so, it is applicable.

１０ ドライエッチング装置（プラズマ処理装置）
１２ チャンバ
３０ 誘電体部材
３０ｂ 基板載置部
３０ｅ 基板載置面
３０ｊ 第１の側壁部（二重シール部の外壁部）
３０ｄ 第２の側壁部
Ｗ 基板
Ｗａ 下面
Ｗｃ 外周端 10 Dry etching equipment (plasma processing equipment)
12 Chamber 30 Dielectric member 30b Substrate placing portion 30e Substrate placing surface 30j First side wall portion (outer wall portion of double seal portion)
30d Second side wall W Substrate Wa Lower surface Wc Outer peripheral edge

Claims (6)

基板のプラズマ処理を実行する減圧可能なチャンバと、
チャンバ内に設けられ、基板が載置される基板載置部を備える誘電体部材と、
誘電体部材に内蔵され、基板を基板載置部に静電吸着するための電極とを有し、
誘電体部材の基板載置部が、基板の下面が載置される基板載置面と、基板載置面の上端の外縁から下方に延在する第１の側壁部と、第１の側壁部の上端に比べて低い高さ位置から下方に延在する第２の側壁部とを備え、
基板が載置された状態の基板載置部を上方から見た場合、基板載置部の中心部に対して第１の側壁部が基板の外周端および第２の側壁部より内側に位置する、プラズマ処理装置。 A depressurizable chamber for performing plasma processing of the substrate;
A dielectric member provided in the chamber and provided with a substrate mounting portion on which the substrate is mounted;
Having an electrode built in the dielectric member and electrostatically adsorbing the substrate to the substrate mounting portion;
The substrate mounting portion of the dielectric member includes a substrate mounting surface on which the lower surface of the substrate is mounted, a first side wall portion extending downward from the outer edge of the upper end of the substrate mounting surface, and a first side wall portion A second side wall portion extending downward from a height position lower than the upper end of the
When the substrate platform with the substrate placed thereon is viewed from above, the first side wall is located inside the outer peripheral edge of the substrate and the second side wall with respect to the center of the substrate platform. , Plasma processing equipment. 第１の側壁部が、基板載置部の内部側に向かって凸状に湾曲する湾曲部を備える、請求項１に記載のプラズマ処理装置。   The plasma processing apparatus according to claim 1, wherein the first side wall includes a curved portion that curves in a convex shape toward the inside of the substrate mounting portion. 誘電体部材の基板載置部が、第１の側壁部の下端から第２の側壁部の上端に向かう平面部を備える、請求項１に記載のプラズマ処理装置。   2. The plasma processing apparatus according to claim 1, wherein the substrate mounting portion of the dielectric member includes a planar portion that extends from the lower end of the first side wall portion toward the upper end of the second side wall portion. 誘電体部材の基板載置部の基板載置面が通過可能であって厚み方向に貫通する基板収容孔と、基板収容孔に収容された基板の下面の外周縁部分を支持する基板支持部とを備え、チャンバに搬入搬出可能なトレイを有し、
誘電体部材の基板載置部は、トレイの基板収容孔の内周面と誘電体部材の基板載置部の第２の側壁部とが対向するようにトレイを誘電体部材に配置可能に、且つ、基板を収容した状態のトレイが誘電体部材に配置されたときに基板がトレイの基板支持部から離間した状態で誘電体部材の基板載置部の基板載置面上に載置されるように構成されている、請求項１から３のいずれか一項に記載のプラズマ処理装置。 A substrate receiving hole through which the substrate mounting surface of the substrate mounting portion of the dielectric member can pass and penetrates in the thickness direction; and a substrate support portion supporting an outer peripheral edge portion of the lower surface of the substrate received in the substrate receiving hole Comprising a tray that can be carried into and out of the chamber,
The substrate mounting portion of the dielectric member can be disposed on the dielectric member so that the inner peripheral surface of the substrate receiving hole of the tray and the second side wall portion of the substrate mounting portion of the dielectric member face each other. When the tray containing the substrate is placed on the dielectric member, the substrate is placed on the substrate placement surface of the substrate placement portion of the dielectric member in a state of being separated from the substrate support portion of the tray. The plasma processing apparatus according to claim 1, configured as described above. 電極が、誘電体部材の基板載置部の基板載置面と平行に延在し、上方視で外縁に規則的な凹凸形状を備える、請求項１から４のいずれか一項に記載のプラズマ処理装置。   The plasma according to any one of claims 1 to 4, wherein the electrode extends in parallel with the substrate mounting surface of the substrate mounting portion of the dielectric member, and has a regular uneven shape on an outer edge when viewed from above. Processing equipment. 減圧されたチャンバ内で基板をプラズマ処理するプラズマ処理方法であって、
チャンバ内に設けられ、基板の下面が載置される基板載置面、基板載置面の上端の外縁から下方に延在する第１の側壁部、および第１の側壁部の上端に比べて低い高さ位置から下方に延在する第２の側壁部を備える基板載置部を有する誘電体部材と、
誘電体部材に内蔵され、基板を基板載置部に静電吸着するための電極とを用意し、
上方から見た場合に、基板載置部の中心部に対して誘電体部材の基板載置部の第１の側壁部が基板の外周端および第２の側壁部より内側に位置するように、誘電体部材の基板載置部上に基板を載置し、
誘電体部材の基板載置部上に載置された基板を、誘電体部材に内蔵された電極に電圧を印加することによって誘電体部材に静電的に吸着させる、プラズマ処理方法。 A plasma processing method for plasma processing a substrate in a decompressed chamber,
Compared to a substrate placement surface provided in the chamber and on which the lower surface of the substrate is placed, a first side wall portion extending downward from an outer edge of an upper end of the substrate placement surface, and an upper end of the first side wall portion A dielectric member having a substrate mounting portion with a second side wall portion extending downward from a low height position;
An electrode built in the dielectric member for electrostatically adsorbing the substrate to the substrate mounting portion is prepared,
When viewed from above, the first side wall portion of the substrate mounting portion of the dielectric member is located inside the outer peripheral end of the substrate and the second side wall portion with respect to the center portion of the substrate mounting portion. Placing the substrate on the substrate placement portion of the dielectric member;
A plasma processing method in which a substrate placed on a substrate placement portion of a dielectric member is electrostatically attracted to the dielectric member by applying a voltage to an electrode built in the dielectric member.
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