JP2014026999A5 - - Google Patents
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- JP2014026999A5 JP2014026999A5 JP2012163605A JP2012163605A JP2014026999A5 JP 2014026999 A5 JP2014026999 A5 JP 2014026999A5 JP 2012163605 A JP2012163605 A JP 2012163605A JP 2012163605 A JP2012163605 A JP 2012163605A JP 2014026999 A5 JP2014026999 A5 JP 2014026999A5
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- layer
- base substrate
- inp layer
- inp
- bonded
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- 239000000758 substrate Substances 0.000 description 13
- 125000004429 atoms Chemical group 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
Description
次に、図３（ｂ）に示すように、積層体のＩｎＰ層１２と下地基板１１とを加熱圧着し、下地基板１１とＩｎＰ層１２とを加熱接合する。
たとえば、ＩｎＰ基板２１、ＧａＩｎＡｓ層２２、ＩｎＰ層１２、下地基板１１からなる積層体を４５０〜５００℃で加熱しながら、積層方向に沿って挟圧する。
これにより、下地基板１１とＩｎＰ層１２とが圧着することとなる。下地基板１１とＩｎＰ層１２の界面には、数原子層の厚さの遷移層（下地基板１１を構成する原子と、ＩｎＰ層１２を構成する原子とが混ざり合った層）が形成されている。ただし、この遷移層以外の領域においては、遷移層は存在せず、ＩｎＰ層１２本来の結晶格子の形状が維持されている。
Next, as illustrated in FIG. 3B, the InP layer 12 and the base substrate 11 of the stacked body are thermocompression bonded, and the base substrate 11 and the InP layer 12 are heat bonded.
For example, a laminated body composed of the InP substrate 21, the GaInAs layer 22, the InP layer 12, and the base substrate 11 is pressed along the laminating direction while being heated at 450 to 500 ° C.
Thereby, the base substrate 11 and the InP layer 12 are pressure-bonded . A transition layer (a layer in which atoms constituting the base substrate 11 and atoms constituting the InP layer 12 are mixed) having a thickness of several atomic layers is formed at the interface between the base substrate 11 and the InP layer 12. . However, in regions other than the transition layer, there is no transition layer, and the original crystal lattice shape of the InP layer 12 is maintained.
その後、窒素雰囲気下で、積層体のＩｎＰ層１２と下地基板１１とを加熱圧着し、下地基板１１とＩｎＰ層１２とを加熱接合した。積層体のＩｎＰ層１２と下地基板１１とを加熱圧着する際の圧力は、８．３Ｎ／ｃｍ２とした。また、加熱温度は、４５０℃であり、前記加圧力をかけながら、１時間加熱した。
これにより、下地基板１１とＩｎＰ層１２とが圧着接合された。下地基板１１とＩｎＰ層１２の界面には、数原子層の厚さの遷移層（下地基板１１を構成する原子と、ＩｎＰ層１２を構成する原子とが混ざり合った層）が形成されていることが確認できた。ただし、この遷移層以外の領域においては、遷移層は存在せず、ＩｎＰ層１２本来の結晶格子の形状が維持されている。
Thereafter, the InP layer 12 and the base substrate 11 of the laminate were heat-pressed in a nitrogen atmosphere, and the base substrate 11 and the InP layer 12 were heat-bonded. The pressure when thermocompression bonding the InP layer 12 and the base substrate 11 of the laminate was 8.3 N / cm 2 . Moreover, the heating temperature was 450 degreeC, and it heated for 1 hour, applying the said pressurizing force.
Thereby, the base substrate 11 and the InP layer 12 were bonded by pressure bonding . A transition layer (a layer in which atoms constituting the base substrate 11 and atoms constituting the InP layer 12 are mixed) having a thickness of several atomic layers is formed at the interface between the base substrate 11 and the InP layer 12. I was able to confirm. However, in regions other than the transition layer, there is no transition layer, and the original crystal lattice shape of the InP layer 12 is maintained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012163605A JP2014026999A (en) | 2012-07-24 | 2012-07-24 | Semiconductor device, template substrate, and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012163605A JP2014026999A (en) | 2012-07-24 | 2012-07-24 | Semiconductor device, template substrate, and method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014026999A JP2014026999A (en) | 2014-02-06 |
| JP2014026999A5 true JP2014026999A5 (en) | 2015-08-13 |
Family
ID=50200416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012163605A Pending JP2014026999A (en) | 2012-07-24 | 2012-07-24 | Semiconductor device, template substrate, and method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014026999A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531459B (en) * | 2020-12-04 | 2022-04-19 | 苏州长光华芯光电技术股份有限公司 | Distributed feedback laser and preparation method thereof |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864911A (en) * | 1994-08-24 | 1996-03-08 | Hitachi Ltd | Etching method for compound semiconductor |
| JP3215297B2 (en) * | 1995-07-18 | 2001-10-02 | 沖電気工業株式会社 | Method for manufacturing semiconductor light emitting device |
| JPH0963951A (en) * | 1995-08-25 | 1997-03-07 | Matsushita Electric Works Ltd | Manufacture of semiconductor substrate and manufacture of semiconductor device |
| US6316332B1 (en) * | 1998-11-30 | 2001-11-13 | Lo Yu-Hwa | Method for joining wafers at a low temperature and low stress |
| JP2000332302A (en) * | 1999-05-19 | 2000-11-30 | Rohm Co Ltd | Semiconductor light emitting element |
| JP2004260109A (en) * | 2003-02-27 | 2004-09-16 | Shin Etsu Handotai Co Ltd | Method of manufacturing light-emitting element, composite translucent substrate, and light-emitting element |
| JP2008235318A (en) * | 2007-03-16 | 2008-10-02 | Oki Data Corp | Nitride semiconductor wafer and method of manufacturing thin-film semiconductor device |
| US8716042B2 (en) * | 2010-03-31 | 2014-05-06 | Cssolution Co., Ltd. | Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor |
| JP2012089828A (en) * | 2010-09-22 | 2012-05-10 | Toshiba Corp | Semiconductor device manufacturing method |
| JP2012104740A (en) * | 2010-11-12 | 2012-05-31 | Stanley Electric Co Ltd | Semiconductor light-emitting device and method for manufacturing the same |
| JP5051319B2 (en) * | 2011-12-14 | 2012-10-17 | ソニー株式会社 | Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and semiconductor light emitting device |
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2012
- 2012-07-24 JP JP2012163605A patent/JP2014026999A/en active Pending
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