CN112531459B - Distributed feedback laser and preparation method thereof - Google Patents

Distributed feedback laser and preparation method thereof Download PDF

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CN112531459B
CN112531459B CN202011397783.3A CN202011397783A CN112531459B CN 112531459 B CN112531459 B CN 112531459B CN 202011397783 A CN202011397783 A CN 202011397783A CN 112531459 B CN112531459 B CN 112531459B
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ingaalas
inp
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CN112531459A (en
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郭银涛
王俊
程洋
肖啸
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Suzhou Everbright Photonics Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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Suzhou Everbright Photonics Co Ltd
Suzhou Everbright Semiconductor Laser Innovation Research Institute Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention provides a distributed feedback laser and a preparation method thereof, wherein the distributed feedback laser comprises: an InGaAlAs semiconductor layer; a P-type InP transition layer; a first P-type insertion layer (InGaAlAs) between the InGaAlAs semiconductor layer and the P-type InP transition layer1－x(InP)xA material. The first P-type insertion layer is arranged between the InGaAlAs semiconductor layer and the P-type InP transition layer, so that the absolute value of the conduction band energy step difference between the InGaAlAs semiconductor layer and the P-type InP transition layer is converted into the sum of the absolute value of the conduction band energy step difference between the first P-type insertion layer and the InGaAlAs semiconductor layer and the absolute value of the conduction band energy step difference between the first P-type insertion layer and the P-type InP transition layer, the size of introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.

Description

Distributed feedback laser and preparation method thereof
Technical Field
The invention relates to the technical field of lasers, in particular to a distributed feedback laser and a preparation method thereof.
Background
With the increasing approach of 5G commercial, a dynamic single-mode distributed feedback laser (DFB-LD) with narrow linewidth, high side-mode rejection ratio and high modulation rate becomes the preferred light source. The distributed feedback laser adopts grating modulation with periodically changed refractive index, has good single longitudinal mode characteristics, has side mode suppression ratio of more than 50dB and modulation rate of more than 50Gb/s, and can meet the application requirements of 5G mobile network on high rate/low time delay. A distributed feedback laser for high-speed optical communication generally uses InP as a growth substrate and InGaAlAs quantum wells as an active layer.
However, because the difference between the conduction band energy levels of InP and InGaAlAs is large, the difference between the conduction band energy levels is introduced during growth, and parasitic resistance is introduced, thereby affecting the device performance.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect that the performance of the device is affected by the large difference between the conduction band energy levels of InP and InGaAlAs in the prior art, thereby providing a distributed feedback laser and a method for manufacturing the same.
The invention provides a distributed feedback laser, comprising:
an InGaAlAs semiconductor layer;
a P-type InP transition layer;
a first P-type insertion layer (InGaAlAs) between the InGaAlAs semiconductor layer and the P-type InP transition layer1－x(InP)xA material.
Optionally, in the first P-type insertion layer, x is 0.05 to 0.95.
Optionally, the thickness of the first P-type insertion layer is 0.5nm to 100 nm.
Optionally, the InGaAlAs semiconductor layer includes an N-type InGaAlAs confinement layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer, an undoped InGaAlAs second waveguide layer, and a P-type InGaAlAs confinement layer, which are stacked, the P-type InGaAlAs confinement layer is disposed between the undoped InGaAlAs second waveguide layer and the first P-type insertion layer, and the P-type InGaAlAs confinement layer is doped with Zn ions; or the like, or, alternatively,
the InGaAlAs semiconductor layer comprises an N-type InGaAlAs limiting layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer and an undoped InGaAlAs second waveguide layer which are arranged in a stacked mode, and the undoped InGaAlAs second waveguide layer is arranged between the undoped InGaAlAs active layer and the first P-type insertion layer.
Optionally, the distributed feedback laser further includes:
a P-type InGaAs ohmic contact layer;
a P-type InP light confining layer;
a second P-type insertion layer between the P-type InGaAs ohmic contact layer and the P-type InP optical confinement layer, the second P-type insertion layer being made of (InGaAlAs)1－y(InP)y。
Optionally, in the second P-type insertion layer, y is 0.05 to 0.95.
Optionally, the thickness of the second P-type insertion layer is 0.5nm to 100 nm.
The invention also provides a preparation method of the distributed feedback laser, which comprises the following steps:
forming an InGaAlAs semiconductor layer;
forming a P-type InP transition layer;
forming a first P-type insertion layer between the InGaAlAs semiconductor layer and the P-type InP transition layer between the step of forming the InGaAlAs semiconductor layer and the step of forming the P-type InP transition layer, the first P-type insertion layer being (InGaAlAs)1－x(InP)xA material.
Optionally, the forming the first P-type insertion layer includes:
the first step is as follows: introducing an indium source, a gallium source and an aluminum source;
the second step is as follows: introducing an arsenic source, a zinc source and a phosphorus source;
the third step: closing the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source;
the fourth step: the indium source is turned off.
Optionally, the flow rate of the indium source is 100 sccm-1000 sccm; the flow rate of the gallium source is 5 sccm-100 sccm; the flow rate of the aluminum source is 25 sccm-500 sccm; the flow rate of the phosphorus source is 100 sccm-2000 sccm; the flow rate of the arsenic source is 1 sccm-200 sccm; the flow rate of the zinc source is 0.05 sccm-10 sccm.
Optionally, the time interval between the first step and the second step is 1 s-100 s;
the time interval between the third step and the fourth step is 1-100 s.
Optionally, the preparation method of the distributed feedback laser further includes the following steps:
forming a P-type InP light limiting layer;
forming a P-type InGaAs ohmic contact layer;
forming a second P-type insertion layer between the P-type InGaAs ohmic contact layer and the P-type InP optical confinement layer between the steps of forming the P-type InP optical confinement layer and forming the P-type InGaAs ohmic contact layer, the second P-type insertion layer being made of (InGaAlAs)1－y(InP)y。
Optionally, the forming the second P-type insertion layer includes:
the fifth step: introducing an indium source;
a sixth step: introducing a gallium source, an aluminum source, an arsenic source, a phosphorus source and a zinc source;
a seventh step of: closing an aluminum source, an arsenic source, a phosphorus source and a zinc source, and only introducing at least one of an indium source and a gallium source;
an eighth step: and closing at least one of the indium source and the gallium source.
The technical scheme of the invention has the following advantages:
1. in the distributed feedback laser provided by the invention, the first P type insertion layer is (InGaAlAs)1－x(InP)xA material, wherein a conduction band energy level of the first P-type insertion layer is between the InGaAlAs semiconductor layer and the P-type InP transition layer, and the absolute value of the conduction band energy level difference between the InGaAlAs semiconductor layer and the P-type InP transition layer is converted into a first P-type insertion layer by arranging the first P-type insertion layer between the InGaAlAs semiconductor layer and the P-type InP transition layerThe sum of the absolute values of the conduction band energy steps of the input layer and the InGaAlAs semiconductor layer and the absolute values of the conduction band energy steps of the first P-type insertion layer and the P-type InP transition layer reduces the size of introduced parasitic resistance and improves the device performance of the distributed feedback laser.
2. In the distributed feedback laser provided by the invention, x in the first P type insertion layer is 0.05-0.95. The conduction band energy level of the first P-type insertion layer is limited by limiting the value of x, so that the conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer and the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer are limited, and a proper conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer is ensured, so that the phenomenon that larger parasitic resistance is introduced due to the larger conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer, and the device performance is further influenced is avoided; and proper conduction band energy level difference is ensured between the first P-type insertion layer and the P-type InP transition layer, so that the phenomenon that the device performance is influenced due to the fact that a larger parasitic resistance is introduced due to the fact that the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer is large is avoided. Namely, the value of x is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
3. The distributed feedback laser provided by the invention has the advantages that the InGaAlAs semiconductor layer comprises an N-type InGaAlAs limiting layer, a non-doped InGaAlAs first waveguide layer, a non-doped InGaAlAs active layer and a non-doped InGaAlAs second waveguide layer which are arranged in a stacking mode, the first P-type insertion layer is arranged between the non-doped InGaAlAs second waveguide layer and the P-type InP transition layer, the effect of stopping the diffusion of P-type impurity Zn can be achieved, the P-type impurity Zn in the P-type InP transition layer is prevented from diffusing to the non-doped InGaAlAs second waveguide layer or even to the non-doped InGaAlAs active layer, the influence on the performance of a device is avoided, meanwhile, the P-type InP transition layer can have higher P-type impurity Zn doping concentration, the resistance is favorably reduced, and the performance of the device is improved.
4. In the distributed feedback laser provided by the invention, the material of the second P-type insertion layer is (InGaAlAs)1－y(InP)yThe conduction band energy level of the second P-type insertion layer is arranged between the P-type InP optical limiting layer and the P-type InGaAs ohmic contact layer, and the absolute value of the difference of the conduction band energy levels between the P-type InP optical limiting layer and the P-type InGaAs ohmic contact layer is converted into the sum of the absolute value of the conduction band energy level difference between the second P-type insertion layer and the P-type InP optical limiting layer and the absolute value of the conduction band energy level difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer by arranging the second P-type insertion layer between the P-type InP optical limiting layer and the P-type InGaAs ohmic contact layer, so that the introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
5. According to the distributed feedback laser provided by the invention, y in the second P type insertion layer is 0.05-0.95. The value of y is limited to limit the conduction band energy level of the second P-type insertion layer, so that the conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer and the conduction band energy level difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer are limited, and a proper conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer is ensured, so that the phenomenon that the device performance is influenced due to the fact that a larger parasitic resistance is introduced due to the larger conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer is avoided; and proper conduction band energy level difference is ensured between the second P-type insertion layer and the P-type InGaAs ohmic contact layer, so that the phenomenon that the device performance is influenced due to the fact that larger parasitic resistance is introduced due to the fact that the conduction band energy level difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer is large is avoided. Namely, the value of y is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
6. According to the preparation method of the distributed feedback laser, the first P-type insertion layer is formed on the InGaAlAs semiconductor layer after the InGaAlAs semiconductor layer is formed, and the first P-type insertion layer is (InGaAlAs)1－x(InP)xMaterial, forming a P-type InP transition layer on the first P-type insertion layer, and forming a conduction band energy level between the InGaAlAs semiconductor layer and the P-type InP transition layerThe absolute value of the difference is converted into the sum of the absolute value of the conduction band energy level difference of the first P-type insertion layer and the InGaAlAs semiconductor layer and the absolute value of the conduction band energy level difference of the first P-type insertion layer and the P-type InP transition layer, so that the size of introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
7. According to the preparation method of the distributed feedback laser, when the first P-type insertion layer is formed, firstly an indium source, a gallium source and an aluminum source are introduced to consume the residual arsenic source in the reaction chamber, then an arsenic source, a zinc source and a phosphorus source are introduced to form the first P-type insertion layer on the surface of the InGaAlAs semiconductor layer, and the influence of the residual arsenic source on the first P-type insertion layer is reduced through the consumption of the residual arsenic source in the reaction chamber in advance, so that the first P-type insertion layer with controllable components is formed; after the first P-type insertion layer is deposited to the required thickness, closing the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source, only introducing the indium source into the reaction chamber to consume the residual arsenic source and phosphorus source in the reaction chamber, meanwhile, indium ions and groups containing the indium ions generated by the decomposition of the indium source cover the first P-type insertion layer, so that the probability of atom nonlinear defect formation caused by As/P switching at the interface of the first P-type insertion layer and the P-type InP transition layer can be reduced, the P-type InP transition layer can be in a low V/III state when the P-type InP transition layer just starts to grow, therefore, III-group ion vacancies in the P-type InP transition layer are reduced, a path for diffusing P-type impurity Zn is blocked, the diffusion of the P-type impurity Zn to the P-type InGaAlAs limiting layer, the non-doped InGaAlAs second waveguide layer and even the non-doped InGaAlAs active layer is reduced, and finally the device performance of the distributed feedback laser is improved.
8. The preparation method of the distributed feedback laser provided by the invention comprises the steps of forming a second P-type insertion layer on the P-type InP optical confinement layer after the P-type InP optical confinement layer is formed, wherein the material of the second P-type insertion layer is (InGaAlAs)1－y(InP)yAnd then forming a P-type InGaAs ohmic contact layer on the second P-type insertion layer, and converting the absolute value of the difference of conduction band energy levels between the P-type InP optical confinement layer and the P-type InGaAs ohmic contact layer into the second P-type insertion layer and the P-type InP optical confinement layerThe sum of the absolute value of the conduction band energy level difference of the second P-type insertion layer and the absolute value of the conduction band energy level difference of the P-type InGaAs ohmic contact layer is reduced, so that the size of introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
9. According to the preparation method of the distributed feedback laser, when the second P-type insertion layer is formed, an indium source is firstly introduced, and indium ions and indium ion-containing groups generated by decomposition of the indium source cover the surface of the P-type InP optical limiting layer; then introducing a gallium source, an aluminum source, an arsenic source, a phosphorus source and a zinc source to form a second P-type insertion layer on the surface of the P-type InP optical limiting layer, wherein the gallium source, the aluminum source, the arsenic source, the phosphorus source and the zinc source which are firstly deposited on the surface of the P-type InP optical limiting layer react with indium ions and indium-containing ion groups on the surface of the P-type InP optical limiting layer, so that on one hand, the direct contact between the arsenic source and the P-type InP optical limiting layer in the deposition process and the As/P switching at an interface can be avoided, and thus, lattice defects caused by atomic nonlinear mixing are avoided, and the crystal quality of the P-type InP optical limiting layer is ensured; on the other hand, the second P-type insertion layer can be in a lower V/III state when the second P-type insertion layer starts to grow, so that III-group ion vacancies in the P-type InP transition layer are reduced, the diffusion path of P-type impurity Zn is blocked, the diffusion of the P-type impurity Zn to the InP light limiting layer is reduced, the InGaAs ohmic contact layer can obtain higher P-type impurity doping concentration, and the device performance of the distributed feedback laser is improved. After the second P-type insertion layer is deposited to the required thickness, the aluminum source, the arsenic source, the phosphorus source and the zinc source are closed, at least one of the indium source and the gallium source is only introduced into the reaction chamber, and the introduced gas source is closed after a period of time, so that the arsenic source and the phosphorus source which are not completely reacted in the reaction chamber can be consumed to avoid generating adverse effects on the formation of the P-type InGaAs ohmic contact layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a distributed feedback laser;
fig. 2 is a schematic structural diagram of a distributed feedback laser provided in embodiment 1 of the present invention;
fig. 3 is a schematic structural diagram of a distributed feedback laser provided in embodiment 2 of the present invention;
description of reference numerals:
1-InP substrate; a 2-N type InP buffer layer; a 3-InGaAlAs semiconductor layer; a 31-N type InGaAlAs confinement layer; 32-an undoped InGaAlAs first waveguide layer; 33-undoped InGaAlAs active layer; 34-an undoped InGaAlAs second waveguide layer; a 35-P type InGaAlAs confinement layer; 4-a first P-type insertion layer; a 5-P type InP transition layer; 6-a grating layer; 7-a grating cover layer; an 8-P type InP light confining layer; 9-a second P-type insertion layer; and a 10-P type InGaAs ohmic contact layer.
Detailed Description
As described in the background, the difference between the conduction band energy levels of InP and InGaAlAs is large, which introduces a difference between the conduction band energy levels during growth, and further introduces parasitic resistance, thereby affecting the device performance.
As shown in fig. 1, a distributed feedback laser includes a second electrode (not shown), an InP substrate 1 ', an N-type InP buffer layer 2 ', an InGaAlAs semiconductor layer 3 ', a P-type InP transition layer 5 ', a grating layer 6 ', a grating cover layer 7 ', a P-type InP optical confinement layer 8 ', a P-type InGaAs ohmic contact layer 10 ' and a first electrode (not shown), wherein the InGaAlAs semiconductor layer 3 ' may include an N-type InGaAlAs confinement layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer, an undoped InGaAlAs second waveguide layer, a P-type InGaAlAs confinement layer, which are stacked, wherein the P-type InGaAlAs confinement layer is in contact with the P-type InP transition layer; the InGaAlAs semiconductor layer may include an N-type InGaAlAs confinement layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer, and an undoped InGaAlAs second waveguide layer, which are stacked, wherein the undoped InGaAlAs second waveguide layer is in contact with the P-type InP transition layer.
However, in the distributed feedback laser with the above structure, the difference between the conduction band energy levels of InP and InGaAlAs is large, so that the parasitic resistances between the InGaAlAs semiconductor layer 3 'and the P-type InP transition layer 5', and between the P-type InP optical confinement layer 8 'and the P-type InGaAs ohmic contact layer 10' are large, thereby affecting the device performance.
The invention provides a distributed feedback laser, comprising: an InGaAlAs semiconductor layer 3; a P-type InP transition layer 5; a first P-type insertion layer 4 between the InGaAlAs semiconductor layer 3 and the P-type InP transition layer 5, the first P-type insertion layer 4 being (InGaAlAs)1－x(InP)xA material. The distributed feedback laser reduces the size of introduced parasitic resistance and improves the device performance of the distributed feedback laser.
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. The embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without any inventive work, are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "outer", etc., indicate orientations or positional relationships illustrated in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
This embodiment provides a distributed feedback laser, referring to fig. 2, including a second electrode (not shown), an InP substrate 1, an N-type InP buffer layer 2, an InGaAlAs semiconductor layer 3, a first P-type insertion layer 4, a P-type InP transition layer 5, a grating layer 6, a grating cap layer 7, a P-type InP optical confinement layer 8, a second electrode, a P-type InP cladding layer 3, and a third electrode,A P-type InGaAs ohmic contact layer 10 and a first electrode (not shown), wherein the first P-type insertion layer 4 is (InGaAlAs)1－x(InP)xA material. The InGaAlAs semiconductor layer 3 comprises an N-type InGaAlAs confinement layer 31, an undoped InGaAlAs first waveguide layer 32, an undoped InGaAlAs active layer 33 and an undoped InGaAlAs second waveguide layer 34 which are arranged in a stacked mode, and the undoped InGaAlAs second waveguide layer 34 is arranged between the undoped InGaAlAs active layer 33 and the first P-type insertion layer 4.
In the above distributed feedback laser, the first P-type insertion layer is (InGaAlAs)1－x(InP)xThe conduction band energy level of the first P-type insertion layer is arranged between the undoped InGaAlAs second waveguide layer in the InGaAlAs semiconductor layer and the P-type InP transition layer, and the absolute value of the conduction band energy level difference between the undoped InGaAlAs second waveguide layer in the InGaAlAs semiconductor layer and the P-type InP transition layer is converted into the sum of the absolute value of the conduction band energy level difference between the first P-type insertion layer and the undoped InGaAlAs second waveguide layer in the InGaAlAs semiconductor layer and the absolute value of the conduction band energy level difference between the first P-type insertion layer and the undoped InGaAlAs second waveguide layer in the InGaAlAs semiconductor layer, and the absolute value of the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer, so that the size of introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
Specifically, the composition of the N-type InGaAlAs confinement layer 31 is (Ga)1－x1Alx1)1－y1Iny1As, wherein x1 is 0-1 and y1 is 0.45-0.6. The composition of the undoped InGaAlAs first waveguide layer 32 is (Ga)1－x2Alx2)1－y2Iny2As, wherein x2 is 0-1 and y2 is 0.45-0.6. The undoped InGaAlAs active layer 33 has a composition of (Ga)1－x3Alx3)1－ y3Iny3As, wherein x3 is 0-1, y3 is 0.45-0.6; the composition of the undoped InGaAlAs second waveguide layer 34 is (Ga)1－x4Alx4)1－y4Iny4As, wherein x4 is 0-1 and y4 is 0.45-0.6. The composition of the P-type InP transition layer 5 is InP. The above-mentionedThe composition of the "InGaAlAs" in the first P-type insertion layer 4 is the same as the composition of the undoped InGaAlAs second waveguide layer 34, and the composition of the "InP" in the first P-type insertion layer 4 is the same as the composition of the P-type InP transition layer 5.
In this embodiment, in the first P-type insertion layer 4, x is 0.05-0.95. The conduction band energy level of the first P-type insertion layer is limited by limiting the value of x, so that the conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer and the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer are limited, and a proper conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer is ensured, so that the phenomenon that larger parasitic resistance is introduced due to the larger conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer, and the device performance is further influenced is avoided; and proper conduction band energy level difference is ensured between the first P-type insertion layer and the P-type InP transition layer, so that the phenomenon that the device performance is influenced due to the fact that a larger parasitic resistance is introduced due to the fact that the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer is large is avoided. Namely, the value of x is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
In the present embodiment, the thickness of the first P-type insertion layer 4 is 0.5nm to 100 nm; the P-type impurity in the first P-type insertion layer 4 is zinc, and the doping concentration of the P-type impurity is 1x1016－5x1017. The first P-type insertion layer is arranged between the undoped InGaAlAs second waveguide layer and the P-type InP transition layer, so that the effect of stopping P-type impurity Zn diffusion can be achieved, the P-type impurity Zn from the P-type InP transition layer is prevented from diffusing to the undoped InGaAlAs second waveguide layer or even the undoped InGaAlAs active layer, and therefore the device performance is influenced, meanwhile, the P-type InP transition layer can have higher P-type impurity doping concentration, resistance reduction is facilitated, and the device performance is improved.
Referring to fig. 2, the distributed feedback laser provided in this embodiment further includes a second P-type insertion layer 9 located between the P-type InGaAs ohmic contact layer 10 and the P-type InP optical confinement layer 8, where the material of the second P-type insertion layer 9 is(InGaAlAs)1－y(InP)y. The conduction band energy level of the second P-type insertion layer 9 is arranged between the P-type InP optical confinement layer and the P-type InGaAs ohmic contact layer, and the absolute value of the difference of the conduction band energy levels between the P-type InP optical confinement layer and the P-type InGaAs ohmic contact layer is converted into the sum of the absolute value of the conduction band energy level difference between the second P-type insertion layer 9 and the P-type InP optical confinement layer and the absolute value of the conduction band energy level difference between the second P-type insertion layer 9 and the P-type InGaAs ohmic contact layer, so that the introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
Wherein, the component of the P-type InGaAs ohmic contact layer 10 is Ga1－x5Inx5As, wherein x5 is 0.45-0.6, and the composition of the P-type InP light limiting layer 8 is InP. The "InP" in the material of the second P-type insertion layer 9 is the same as the composition of the P-type InP light confinement layer 8, and the "InGaAlAs" in the material of the second P-type insertion layer 9 is (Ga)1－ x6Alx6)1－y6Iny6And As, wherein x6 is 0-1, y6 is 0.45-0.6, the ratio of indium element, gallium element and arsenic element of the InGaAlAs in the material of the second P-type insertion layer 9 to indium element, gallium element and arsenic element of the P-type InGaAs ohmic contact layer 10 is the same, and the conduction band energy level of the second P-type insertion layer 9 is adjusted by adding Al element.
In this embodiment, y is 0.05-0.95 in the second P-type insertion layer 9. The value of y is limited to limit the conduction band energy level of the second P-type insertion layer, so that the conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer 8 and the conduction band energy level difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9 are limited, and a proper conduction band energy level difference is ensured between the second P-type insertion layer and the P-type InP light limiting layer 8, so that the phenomenon that a larger parasitic resistance is introduced due to the larger conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer 8, and the device performance is further influenced is avoided; and proper conduction band energy step difference is ensured between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9, so that the phenomenon that the device performance is influenced due to the fact that larger parasitic resistance is introduced due to the fact that the conduction band energy step difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9 is large is avoided. Namely, the value of y is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
In this embodiment, the thickness of the second P-type insertion layer 9 is 0.5nm to 100 nm; the P-type impurity in the second P-type insertion layer 9 is zinc, and the doping concentration of the P-type impurity is 3x1017－3x1018. The second P-type insertion layer is arranged between the P-type InP transition layer and the P-type InGaAs ohmic contact layer, so that the effect of stopping diffusion of P-type impurity Zn can be achieved, the P-type impurity Zn from the P-type InGaAs ohmic contact layer is prevented from diffusing to the P-type InP transition layer to influence the performance of a device, meanwhile, the P-type InGaAs ohmic contact layer can have higher P-type impurity doping concentration, resistance is reduced beneficially, and the performance of the device is improved.
The method for manufacturing the distributed feedback laser is described in detail below.
S1, providing an InP substrate 1;
s2, forming an N-type InP buffer layer 2;
specifically, an InP substrate 1 is placed in a reaction chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) system, the pressure of the reaction chamber is set to be 40 mbar-60 mbar, the temperature is 600 ℃ -700 ℃, and hydrogen is selected as carrier gas; and introducing a phosphorus source, an indium source and a silicon source to grow the N-type InP buffer layer 2.
S3, forming an InGaAlAs semiconductor layer 3;
in the present embodiment, the formation of the InGaAlAs semiconductor layer 3 includes the steps of:
s31, forming an N-type InGaAlAs limiting layer 31;
specifically, in step S2, the phosphorus source is turned off, the flow rates of the indium source and the silicon source are adjusted, and the gallium source, the aluminum source, and the arsenic source are introduced to grow the N-type InGaAlAs confinement layer 31.
S32, forming the first waveguide layer 32 of undoped InGaAlAs;
specifically, on the basis of step S31, after the growth of the N-type InGaAlAs confinement layer 31 is completed, the silicon source is turned off, and the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs first waveguide layer 32.
S33, forming an undoped InGaAlAs active layer 33;
specifically, on the basis of step S32, after the growth of the undoped InGaAlAs first waveguide layer 32 is completed, the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs active layer 33.
S34, forming the second waveguide layer 34 of undoped InGaAlAs;
specifically, on the basis of step S33, after the growth of the undoped InGaAlAs active layer 33 is completed, the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs second waveguide layer 34.
S4, forming a first P-type insertion layer 4, wherein the first P-type insertion layer 4 is (InGaAlAs)1－x(InP)xA material;
the step of forming the first P-type insertion layer 4 includes the steps of:
s41, introducing an indium source, a gallium source and an aluminum source;
specifically, on the basis of the step S34, closing the arsenic source, introducing the indium source, the gallium source and the aluminum source into the reaction chamber, and adjusting the flow rate of the indium source to be 100 sccm-1000 sccm, the flow rate of the gallium source to be 5 sccm-100 sccm, the flow rate of the aluminum source to be 25 sccm-500 sccm, and the introduction time to be 1S-100S; illustratively, the indium source has a flow rate of 100sccm, 200sccm, 300sccm, 400sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, the gallium source has a flow rate of 5sccm, 15sccm, 25sccm, 35sccm, 45sccm, 55sccm, 65sccm, 75sccm, 85sccm, 95sccm, 100sccm, the aluminum source has a flow rate of 25sccm, 75sccm, 125sccm, 175sccm, 225sccm, 275sccm, 325sccm, 375sccm, 425sccm, 500 sccm; the flowing time is 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s and 100 s; the larger the flow rate of the group III source, the shorter the time required for introduction.
S42, introducing an arsenic source, a zinc source and a phosphorus source;
specifically, on the basis of the step S41, an arsenic source, a zinc source and a phosphorus source are introduced, wherein the flow rate of the arsenic source is 1 sccm-200 sccm, the flow rate of the zinc source is 0.05 sccm-10 sccm, the flow rate of the phosphorus source is 100 sccm-2000 sccm, and the introduction time is 1S-100S; illustratively, the arsenic source has a flow rate of 1sccm, 5sccm, 10sccm, 15sccm, 20sccm, 40sccm, 60sccm, 80sccm, 100sccm, 120sccm, 150sccm, 200sccm, the zinc source has a flow rate of 0.05sccm, 0.1sccm, 0.5sccm, 1sccm, 2sccm, 4sccm, 6sccm, 8sccm, 10sccm, the phosphorus source has a flow rate of 100sccm, 200sccm, 400sccm, 600sccm, 800sccm, 1200sccm, 1600sccm, 2000sccm, and the introduction time is 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s. The flow rate of the zinc source needs to be matched with the total flow rate of group III sources such as indium source, gallium source, aluminum source and the like so as to achieve the designed doping concentration. The growth speed of the first P-type insertion layer 4 is mainly influenced by the flow rate of group III sources such as indium source, gallium source and aluminum source, and the larger the flow rate of the group III source is, the shorter the introduction time can be correspondingly shortened.
S43, closing the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source;
and S44, closing the indium source. Specifically, after the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source are closed for 1 s-100 s, the indium source is closed. The time interval between turning off the gallium, aluminum, arsenic, zinc and phosphorus sources and turning off the indium source may be 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s.
S5, forming a P-type InP transition layer 5;
specifically, on the basis of step S44, an indium source, a zinc source, and a phosphorus source are introduced into the reaction chamber.
S6, forming a grating layer 6;
specifically, the structure prepared in step S5 is taken out from the reaction chamber, and the grating layer 6 is obtained through a standard photolithography process.
S7, forming a grating covering layer 7;
specifically, the structure prepared in step S6 is placed in a reaction chamber, the pressure in the reaction chamber is set to 40 mbar-60 mbar, the temperature is 550 ℃ to 700 ℃, hydrogen is selected as carrier gas, a phosphorus source is introduced as protection in the temperature rising process, and an indium source and a zinc source are introduced to grow the grating covering layer 7 after the temperature is stable.
S8, forming a P-type InP light limiting layer 8;
specifically, in step S7, the flows of the indium source, the zinc source, and the phosphorus source are adjusted to grow the P-type InP light confining layer 8.
S9, forming a second P-type insertion layer 9, wherein the material of the second P-type insertion layer 9 is (InGaAlAs)1－y(InP)y；
In the present embodiment, forming the second P-type insertion layer 9 includes the steps of:
s91, introducing an indium source;
specifically, on the basis of the step S8, closing the phosphorus source and the zinc source, only introducing the indium source into the reaction chamber, and adjusting the flow rate of the indium source to be 100 sccm-1000 sccm for 1S-100S; illustratively, the indium source has a flow rate of 100sccm, 200sccm, 300sccm, 400sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm for 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s; the larger the flow of the indium source is, the shorter the introduction time can be correspondingly.
S92, introducing a gallium source, an aluminum source, an arsenic source, a phosphorus source and a zinc source;
specifically, on the basis of the step S91, introducing a gallium source, an aluminum source, an arsenic source, a zinc source and a phosphorus source, wherein the flow rate of the gallium source is 5 sccm-100 sccm, the flow rate of the aluminum source is 25 sccm-500 sccm, the flow rate of the arsenic source is 1 sccm-200 sccm, the flow rate of the zinc source is 0.05 sccm-10 sccm, the flow rate of the phosphorus source is 100 sccm-2000 sccm, and the introduction time is 1S-100S; exemplary gallium sources have a flow rate of 5sccm, 15sccm, 25sccm, 35sccm, 45sccm, 55sccm, 65sccm, 75sccm, 85sccm, 95sccm, 100sccm, aluminum sources have a flow rate of 25sccm, 75sccm, 125sccm, 175sccm, 225sccm, 275sccm, 325sccm, 375sccm, 425sccm, 500sccm, arsenic sources have a flow rate of 1sccm, 5sccm, 10sccm, 15sccm, 20sccm, 40sccm, 60sccm, 80sccm, 100sccm, 120sccm, 150sccm, 200sccm, phosphorus sources have a flow rate of 100, 200sccm, 400sccm, 600sccm, 800sccm, 1200, 1600sccm, 2000sccm, and a flow time of 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25sccm, 45sccm, 55sccm, 75sccm, 80sccm, 100sccm, 200sccm, 100sccm, 50sccm, 100s, 100sccm, 0., 90s, 95s, 100 s. The growth speed of the second P-type insertion layer 9 is mainly influenced by the flow rate of group III sources such as indium source, gallium source, aluminum source and the like, and the larger the flow rate of the group III source is, the shorter the introduction time can be correspondingly shortened.
S93, closing an aluminum source, an arsenic source, a phosphorus source and a zinc source, and only introducing at least one of an indium source and a gallium source;
specifically, an aluminum source, an arsenic source, a phosphorus source and a zinc source can be closed, and an indium source and a gallium source are introduced; or closing an aluminum source, an arsenic source, a phosphorus source, a zinc source and an indium source, and introducing a gallium source; or closing the aluminum source, the arsenic source, the phosphorus source, the zinc source and the gallium source and introducing the indium source.
And S94, closing at least one of the indium source and the gallium source.
Specifically, the air source ventilated in step S93 is closed, and the time interval between the closing operation in step S93 and the closing operation in step S94 is 1S-100S. Illustratively, the time interval may be 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s.
S10, forming a P-type InGaAs ohmic contact layer 10;
specifically, an indium source, a gallium source, an arsenic source, and a zinc source are introduced to grow the P-type InGaAs ohmic contact layer 10. The required gas source may be introduced on the basis of step S93. If the aluminum source, the arsenic source, the phosphorus source and the zinc source are closed in the step S93, and the indium source and the gallium source are introduced, the arsenic source and the zinc source are introduced in the step S10; if the aluminum source, the arsenic source, the phosphorus source, the zinc source and the indium source are closed in the step S93, and the gallium source is introduced, the arsenic source and the indium source are introduced in the step S10; if the aluminum source, the arsenic source, the phosphorus source, the zinc source and the gallium source are closed and the indium source is introduced, the arsenic source, the zinc source and the gallium source are introduced in step S10.
S11, manufacturing a chip;
taking out the structure prepared in step S10, forming a ridge waveguide structure on the P-type InGaAs ohmic contact layer 10 by a photolithography and etching process, and then forming a first electrode (not shown in the figure) on a surface of the P-type InGaAs ohmic contact layer 10, which is far away from the second P-type insertion layer 9, by an evaporation method; then, thinning the InP substrate 1 by a grinding and polishing process, and forming a second electrode (not shown in the figure) on the surface of the InP substrate 1 on the side away from the N-type InP buffer layer 2 by an evaporation method; and then, forming a high-reflectivity film layer on one side surface of the structure perpendicular to the P-type InGaAs ohmic contact layer 10 by an evaporation method, and forming a low-reflectivity film layer on one side surface of the structure perpendicular to the P-type InGaAs ohmic contact layer 10 by the evaporation method, wherein the low-reflectivity film layer and the high-reflectivity film layer are positioned on two opposite side surfaces of the structure, so that the laser chip is manufactured.
It should be noted that the indium source may be trimethyl indium or triethyl indium, the gallium source may be trimethyl gallium or triethyl gallium, the aluminum source may be trimethyl aluminum or triethyl aluminum, the arsenic source may be arsine or tert-butyl dihydroarsenic, the zinc source may be diethyl zinc or dimethyl zinc, the phosphorus source may be phosphane or tert-butyl dihydrophosphorus, and the silicon source may be silane or disilane.
Example 2
The present embodiment provides a distributed feedback laser, referring to fig. 3, including a second electrode (not shown in the figure), an InP substrate 1, an N-type InP buffer layer 2, an InGaAlAs semiconductor layer 3, a first P-type insertion layer 4, a P-type InP transition layer 5, a grating layer 6, a grating capping layer 7, a P-type InP light confining layer 8, a P-type InGaAs ohmic contact layer 10, and a first electrode (not shown in the figure), which are stacked, wherein the first P-type insertion layer 4 is (InGaAlAs)1－x(InP)xA material. The InGaAlAs semiconductor layer 3 comprises an N-type InGaAlAs confining layer 31, an undoped InGaAlAs first waveguide layer 32, an undoped InGaAlAs active layer 33, an undoped InGaAlAs second waveguide layer 34 and a P-type InGaAlAs confining layer 35 which are arranged in a stacked manner, wherein the P-type InGaAlAs confining layer 35 is arranged on the undoped InGaAlAs confining layerBetween the second waveguide layer 34 and the first P-type insertion layer 4, the P-type InGaAlAs confinement layer 35 is doped with Zn ions.
In the above distributed feedback laser, the first P-type insertion layer is (InGaAlAs)1－x(InP)xThe conduction band energy level of the first P-type insertion layer is arranged between a P-type InGaAlAs limiting layer in the InGaAlAs semiconductor layer and a P-type InP transition layer, the absolute value of the conduction band energy level difference between the P-type InGaAlAs limiting layer in the InGaAlAs semiconductor layer and the P-type InP transition layer is converted into the sum of the absolute value of the conduction band energy level difference between the first P-type insertion layer and the P-type InGaAlAs limiting layer in the InGaAlAs semiconductor layer and the absolute value of the conduction band energy level difference between the first P-type insertion layer and the P-type InGaAlAs limiting layer in the InGaAlAs semiconductor layer, and the absolute value of the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer, so that the introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
Specifically, the composition of the N-type InGaAlAs confinement layer 31 is (Ga)1－x1Alx1)1－y1Iny1As, wherein x1 is 0-1 and y1 is 0.45-0.6. The composition of the undoped InGaAlAs first waveguide layer 32 is (Ga)1－x2Alx2)1－y2Iny2As, wherein x2 is 0-1 and y2 is 0.45-0.6. The undoped InGaAlAs active layer 33 has a composition of (Ga)1－x3Alx3)1－ y3Iny3As, wherein x3 is 0-1, y3 is 0.45-0.6; the composition of the undoped InGaAlAs second waveguide layer 34 is (Ga)1－x4Alx4)1－y4Iny4As, wherein x4 is 0-1 and y4 is 0.45-0.6. The composition of the P-type InGaAlAs confinement layer 35 is (Ga)1－x7Alx7)1－y7Iny7As, wherein x7 is 0-1 and y7 is 0.45-0.6. The composition of the P-type InP transition layer 5 is InP. The composition of the InGaAlAs in the first P-type insertion layer 4 is the same as that of the P-type InGaAlAs confinement layer 35, and the composition of the InP in the first P-type insertion layer 4 is the same as that of the P-type InP transition layer 5.
In this embodiment, in the first P-type insertion layer 4, x is 0.05-0.95. The conduction band energy level of the first P-type insertion layer is limited by limiting the value of x, so that the conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer and the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer are limited, and a proper conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer is ensured, so that the phenomenon that larger parasitic resistance is introduced due to the larger conduction band energy level difference between the first P-type insertion layer and the InGaAlAs semiconductor layer, and the device performance is further influenced is avoided; and proper conduction band energy level difference is ensured between the first P-type insertion layer and the P-type InP transition layer, so that the phenomenon that the device performance is influenced due to the fact that a larger parasitic resistance is introduced due to the fact that the conduction band energy level difference between the first P-type insertion layer and the P-type InP transition layer is large is avoided. Namely, the value of x is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
In the present embodiment, the thickness of the first P-type insertion layer 4 is 0.5nm to 100 nm; the P-type impurity in the first P-type insertion layer 4 is zinc, and the doping concentration of the P-type impurity is 1x1016－5x1017。
Referring to fig. 3, the distributed feedback laser provided in this embodiment further includes a second P-type insertion layer 9 located between the P-type InGaAs ohmic contact layer 10 and the P-type InP optical confinement layer 8, where the material of the second P-type insertion layer 9 is (InGaAlAs)1－y(InP)y. The conduction band energy level of the second P-type insertion layer 9 is arranged between the P-type InP optical confinement layer and the P-type InGaAs ohmic contact layer, and the absolute value of the difference of the conduction band energy levels between the P-type InP optical confinement layer and the P-type InGaAs ohmic contact layer is converted into the sum of the absolute value of the conduction band energy level difference between the second P-type insertion layer 9 and the P-type InP optical confinement layer and the absolute value of the conduction band energy level difference between the second P-type insertion layer 9 and the P-type InGaAs ohmic contact layer, so that the introduced parasitic resistance is reduced, and the device performance of the distributed feedback laser is improved.
Wherein, the component of the P-type InGaAs ohmic contact layer 10 is Ga1－x5Inx5As, wherein x5 is 0.45-0.6, and the composition of the P-type InP light limiting layer 8 is InP. The "InP" in the material of the second P-type insertion layer 9 is the same as the composition of the P-type InP light confinement layer 8, and the "InGaAlAs" in the material of the second P-type insertion layer 9 is (Ga)1－ x6Alx6)1－y6Iny6And As, wherein x6 is 0-1, y6 is 0.45-0.6, the ratio of indium element, gallium element and arsenic element of the InGaAlAs in the material of the second P-type insertion layer 9 to indium element, gallium element and arsenic element of the P-type InGaAs ohmic contact layer 10 is the same, and the conduction band energy level of the second P-type insertion layer 9 is adjusted by adding Al element.
In this embodiment, y is 0.05-0.95 in the second P-type insertion layer 9. The value of y is limited to limit the conduction band energy level of the second P-type insertion layer, so that the conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer 8 and the conduction band energy level difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9 are limited, and a proper conduction band energy level difference is ensured between the second P-type insertion layer and the P-type InP light limiting layer 8, so that the phenomenon that a larger parasitic resistance is introduced due to the larger conduction band energy level difference between the second P-type insertion layer and the P-type InP light limiting layer 8, and the device performance is further influenced is avoided; and proper conduction band energy step difference is ensured between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9, so that the phenomenon that the device performance is influenced due to the fact that larger parasitic resistance is introduced due to the fact that the conduction band energy step difference between the second P-type insertion layer and the P-type InGaAs ohmic contact layer 9 is large is avoided. Namely, the value of y is limited to further reduce the size of introduced parasitic resistance, and the device performance of the distributed feedback laser is improved.
In this embodiment, the thickness of the second P-type insertion layer 9 is 0.5nm to 100 nm; the P-type impurity in the second P-type insertion layer 9 is zinc, and the doping concentration of the P-type impurity is 5x1017－3x1018。
The method for manufacturing the distributed feedback laser is described in detail below.
S1, providing an InP substrate 1;
s2, forming an N-type InP buffer layer 2;
specifically, an InP substrate 1 is placed in a reaction chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) system, the pressure of the reaction chamber is set to be 40 mbar-60 mbar, the temperature is 600 ℃ -700 ℃, and hydrogen is selected as carrier gas; and introducing a phosphorus source, an indium source and a silicon source to grow the N-type InP buffer layer 2.
S3, forming an InGaAlAs semiconductor layer 3;
in the present embodiment, the formation of the InGaAlAs semiconductor layer 3 includes the steps of:
s31, forming an N-type InGaAlAs limiting layer 31;
specifically, in step S2, the phosphorus source is turned off, the flow rates of the indium source and the silicon source are adjusted, and the gallium source, the aluminum source, and the arsenic source are introduced to grow the N-type InGaAlAs confinement layer 31.
S32, forming the first waveguide layer 32 of undoped InGaAlAs;
specifically, on the basis of step S31, after the growth of the N-type InGaAlAs confinement layer 31 is completed, the silicon source is turned off, and the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs first waveguide layer 32.
S33, forming an undoped InGaAlAs active layer 33;
specifically, on the basis of step S32, after the growth of the undoped InGaAlAs first waveguide layer 32 is completed, the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs active layer 33.
S34, forming the second waveguide layer 34 of undoped InGaAlAs;
specifically, on the basis of step S33, after the growth of the undoped InGaAlAs active layer 33 is completed, the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted to grow the undoped InGaAlAs second waveguide layer 34.
S35, forming a P-type InGaAlAs confinement layer 35;
specifically, on the basis of step S34, after the growth of the undoped InGaAlAs second waveguide layer 34 is completed, the flow rates of the indium source, the gallium source, the aluminum source, and the arsenic source are adjusted, and the zinc source is introduced.
S4, forming a first P-type insertion layer 4, wherein the first P-type insertion layer 4 is (InGaAlAs)1－x(InP)xA material;
the step of forming the first P-type insertion layer 4 includes the steps of:
s41, introducing an indium source, a gallium source and an aluminum source;
specifically, on the basis of the step S35, closing the arsenic source and the zinc source, introducing the indium source, the gallium source and the aluminum source into the reaction chamber, and adjusting the flow rate of the indium source to be 100 sccm-1000 sccm, the flow rate of the gallium source to be 5 sccm-100 sccm, the flow rate of the aluminum source to be 25 sccm-500 sccm, and the introduction time to be 1S-100S; illustratively, the indium source has a flow rate of 100sccm, 200sccm, 300sccm, 400sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm, the gallium source has a flow rate of 5sccm, 15sccm, 25sccm, 35sccm, 45sccm, 55sccm, 65sccm, 75sccm, 85sccm, 95sccm, 100sccm, the aluminum source has a flow rate of 25sccm, 75sccm, 125sccm, 175sccm, 225sccm, 275sccm, 325sccm, 375sccm, 425sccm, 500 sccm; the flowing time is 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s and 100 s; the larger the flow rate of the group III source, the shorter the time required for introduction.
S42, introducing an arsenic source, a zinc source and a phosphorus source;
specifically, on the basis of the step S41, an arsenic source, a zinc source and a phosphorus source are introduced, wherein the flow rate of the arsenic source is 1 sccm-200 sccm, the flow rate of the zinc source is 0.05 sccm-10 sccm, the flow rate of the phosphorus source is 100 sccm-2000 sccm, and the introduction time is 1S-100S; illustratively, the arsenic source has a flow rate of 1sccm, 5sccm, 10sccm, 15sccm, 20sccm, 40sccm, 60sccm, 80sccm, 100sccm, 120sccm, 150sccm, 200sccm, the zinc source has a flow rate of 0.05sccm, 0.1sccm, 0.5sccm, 1sccm, 2sccm, 4sccm, 6sccm, 8sccm, 10sccm, the phosphorus source has a flow rate of 100sccm, 200sccm, 400sccm, 600sccm, 800sccm, 1200sccm, 1600sccm, 2000sccm, and the introduction time is 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s. The flow rate of the zinc source needs to be matched with the total flow rate of group III sources such as indium source, gallium source, aluminum source and the like so as to achieve the designed doping concentration. The growth speed of the first P-type insertion layer 4 is mainly influenced by the flow rate of group III sources such as indium source, gallium source and aluminum source, and the larger the flow rate of the group III source is, the shorter the introduction time can be correspondingly shortened.
S43, closing the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source;
and S44, closing the indium source. Specifically, after the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source are closed for 1 s-100 s, the indium source is closed. The time interval between turning off the gallium, aluminum, arsenic, zinc and phosphorus sources and turning off the indium source may be 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s.
S5, forming a P-type InP transition layer 5;
specifically, on the basis of step S44, an indium source, a zinc source, and a phosphorus source are introduced into the reaction chamber.
S6, forming a grating layer 6;
specifically, the structure prepared in step S5 is taken out from the reaction chamber, and the grating layer 6 is obtained through a standard photolithography process.
S7, forming a grating covering layer 7;
specifically, the structure prepared in step S6 is placed in a reaction chamber, the pressure in the reaction chamber is set to 40 mbar-60 mbar, the temperature is 550 ℃ to 700 ℃, hydrogen is selected as carrier gas, a phosphorus source is introduced as protection in the temperature rising process, and an indium source and a zinc source are introduced to grow the grating covering layer 7 after the temperature is stable.
S8, forming a P-type InP light limiting layer 8;
specifically, in step S7, the flows of the indium source, the zinc source, and the phosphorus source are adjusted to grow the P-type InP light confining layer 8.
S9, forming a second P-type insertion layer 9, wherein the material of the second P-type insertion layer 9 is (InGaAlAs)1－y(InP)y；
In the present embodiment, forming the second P-type insertion layer 9 includes the steps of:
s91, introducing an indium source;
specifically, on the basis of the step S8, closing the phosphorus source and the zinc source, only introducing the indium source into the reaction chamber, and adjusting the flow rate of the indium source to be 100 sccm-1000 sccm for 1S-100S; illustratively, the indium source has a flow rate of 100sccm, 200sccm, 300sccm, 400sccm, 500sccm, 600sccm, 700sccm, 800sccm, 900sccm, 1000sccm for 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s; the larger the flow of the indium source is, the shorter the introduction time can be correspondingly.
S92, introducing a gallium source, an aluminum source, an arsenic source, a phosphorus source and a zinc source;
specifically, on the basis of the step S91, introducing a gallium source, an aluminum source, an arsenic source, a zinc source and a phosphorus source, wherein the flow rate of the gallium source is 5 sccm-100 sccm, the flow rate of the aluminum source is 25 sccm-500 sccm, the flow rate of the arsenic source is 1 sccm-200 sccm, the flow rate of the zinc source is 0.05 sccm-10 sccm, the flow rate of the phosphorus source is 100 sccm-2000 sccm, and the introduction time is 1S-100S; illustratively, the gallium source has a flow rate of 5sccm, 15sccm, 25sccm, 35sccm, 45sccm, 55sccm, 65sccm, 75sccm, 85sccm, 95sccm, 100sccm, the aluminum source has a flow rate of 25sccm, 75sccm, 125sccm, 175sccm, 225sccm, 275sccm, 325sccm, 375sccm, 425sccm, 500sccm, 1sccm, 5sccm, 10sccm, 15sccm, 20sccm, 40sccm, 60sccm, 80sccm, 100sccm, 120sccm, 150sccm, 200sccm, the flow rate of the zinc source is 0.05sccm, 0.1sccm, 0.5sccm, 1sccm, 2sccm, 4sccm, 6sccm, 8sccm, 10sccm, the flow rate of the phosphorus source is 100sccm, 200sccm, 400sccm, 600sccm, 800sccm, 1200sccm, 1600sccm and 2000sccm, and the introduction time is 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s and 100 s. The growth speed of the second P-type insertion layer 9 is mainly influenced by the flow rate of group III sources such as indium source, gallium source, aluminum source and the like, and the larger the flow rate of the group III source is, the shorter the introduction time can be correspondingly shortened.
S93, closing an aluminum source, an arsenic source, a phosphorus source and a zinc source, and only introducing at least one of an indium source and a gallium source;
specifically, an aluminum source, an arsenic source, a phosphorus source and a zinc source can be closed, and an indium source and a gallium source are introduced; or closing an aluminum source, an arsenic source, a phosphorus source, a zinc source and an indium source, and introducing a gallium source; or closing the aluminum source, the arsenic source, the phosphorus source, the zinc source and the gallium source and introducing the indium source.
And S94, closing at least one of the indium source and the gallium source.
Specifically, the air source ventilated in step S93 is closed, and the time interval between the closing operation in step S93 and the closing operation in step S94 is 1S-100S. Illustratively, the time interval may be 1s, 3s, 5s, 10s, 15s, 20s, 30s, 25s, 35s, 40s, 45s, 50s, 55s, 60s, 65s, 70s, 75s, 80s, 85s, 90s, 95s, 100 s.
S10, forming a P-type InGaAs ohmic contact layer 10;
specifically, an indium source, a gallium source, an arsenic source, and a zinc source are introduced to grow the P-type InGaAs ohmic contact layer 10. The required gas source may be introduced on the basis of step S93. If the aluminum source, the arsenic source, the phosphorus source and the zinc source are closed in the step S93, and the indium source and the gallium source are introduced, the arsenic source and the zinc source are introduced in the step S10; if the aluminum source, the arsenic source, the phosphorus source, the zinc source and the indium source are closed in the step S93, and the gallium source is introduced, the arsenic source and the indium source are introduced in the step S10; if the aluminum source, the arsenic source, the phosphorus source, the zinc source and the gallium source are closed and the indium source is introduced, the arsenic source, the zinc source and the gallium source are introduced in step S10.
S11, manufacturing a chip;
taking out the structure prepared in step S10, forming a ridge waveguide structure on the P-type InGaAs ohmic contact layer 10 by a photolithography and etching process, and then forming a first electrode (not shown in the figure) on a surface of the P-type InGaAs ohmic contact layer 10, which is far away from the second P-type insertion layer 9, by an evaporation method; then, thinning the InP substrate 1 by a grinding and polishing process, and forming a second electrode (not shown in the figure) on the surface of the InP substrate 1 on the side away from the N-type InP buffer layer 2 by an evaporation method; then, a high-reflectivity film layer is formed on one side surface of the structure perpendicular to the P-type InGaAs ohmic contact layer 10 by an evaporation method, and a low-reflectivity film layer is formed on one side surface of the structure perpendicular to the P-type InGaAs ohmic contact layer 10 by an evaporation method, wherein the low-reflectivity film layer and the high-reflectivity film layer are located on two opposite side surfaces of the structure.
It should be noted that the indium source may be trimethyl indium or triethyl indium, the gallium source may be trimethyl gallium or triethyl gallium, the aluminum source may be trimethyl aluminum or triethyl aluminum, the arsenic source may be arsine or tert-butyl dihydroarsenic, the zinc source may be diethyl zinc or dimethyl zinc, the phosphorus source may be phosphane or tert-butyl dihydrophosphorus, and the silicon source may be silane or disilane.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (13)

1. A distributed feedback laser, comprising:
the InGaAlAs semiconductor layer comprises an N-type InGaAlAs limiting layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer and an undoped InGaAlAs second waveguide layer which are arranged in a stacked mode;
a P-type InP transition layer;
a first P-type insertion layer (InGaAlAs) between the undoped InGaAlAs second waveguide layer and the P-type InP transition layer1－x(InP)xA material.
2. The distributed feedback laser as claimed in claim 1, wherein x is 0.05-0.95 in the first P-type insertion layer.
3. The distributed feedback laser as described in claim 1, wherein said first P-type insertion layer has a thickness of 0.5nm to 100 nm.
4. A distributed feedback laser as defined in claim 1 wherein said InGaAlAs semiconductor layer further comprises a P-type InGaAlAs confining layer disposed on a surface of said undoped InGaAlAs second waveguide layer on a side facing away from said undoped InGaAlAs active layer, said P-type InGaAlAs confining layer being disposed between said undoped InGaAlAs second waveguide layer and said first P-type insertion layer, said P-type InGaAlAs confining layer being doped with Zn ions.
5. The distributed feedback laser of claim 1, further comprising:
a P-type InGaAs ohmic contact layer;
a P-type InP light confining layer;
a second P-type insertion layer between the P-type InGaAs ohmic contact layer and the P-type InP optical confinement layer, the second P-type insertion layer being made of (InGaAlAs)1－y(InP)y。
6. The distributed feedback laser as claimed in claim 5, wherein y is 0.05-0.95 in the second P-type insertion layer.
7. The distributed feedback laser as claimed in claim 5, wherein the second P-type insertion layer has a thickness of 0.5nm to 100 nm.
8. A preparation method of a distributed feedback laser is characterized by comprising the following steps:
forming an InGaAlAs semiconductor layer, wherein the InGaAlAs semiconductor layer comprises an N-type InGaAlAs limiting layer, an undoped InGaAlAs first waveguide layer, an undoped InGaAlAs active layer and an undoped InGaAlAs second waveguide layer which are arranged in a stacked mode;
forming a P-type InP transition layer;
forming a first P-type insertion layer between the undoped InGaAlAs second waveguide layer and the P-type InP transition layer between the step of forming the InGaAlAs semiconductor layer and the step of forming the P-type InP transition layer, the first P-type insertion layer being (InGaAlAs)1－x(InP)xA material.
9. The method of claim 8, wherein forming the first P-type insertion layer comprises:
the first step is as follows: introducing an indium source, a gallium source and an aluminum source;
the second step is as follows: introducing an arsenic source, a zinc source and a phosphorus source;
the third step: closing the gallium source, the aluminum source, the arsenic source, the zinc source and the phosphorus source;
the fourth step: the indium source is turned off.
10. The method of claim 9, wherein the indium source has a flow rate of 100sccm to 1000 sccm; the flow rate of the gallium source is 5 sccm-100 sccm; the flow rate of the aluminum source is 25 sccm-500 sccm; the flow rate of the phosphorus source is 100 sccm-2000 sccm; the flow rate of the arsenic source is 1 sccm-200 sccm; the flow rate of the zinc source is 0.05 sccm-10 sccm.
11. The method of claim 10, wherein the step of forming the distributed feedback laser,
the time interval between the first step and the second step is 1-100 s;
the time interval between the third step and the fourth step is 1-100 s.
12. The method of claim 8, further comprising the steps of:
forming a P-type InP light limiting layer;
forming a P-type InGaAs ohmic contact layer;
forming a second P-type insertion layer between the P-type InGaAs ohmic contact layer and the P-type InP optical confinement layer between the steps of forming the P-type InP optical confinement layer and forming the P-type InGaAs ohmic contact layer, the second P-type insertion layer being made of (InGaAlAs)1－y(InP)y。
13. The method of claim 12, wherein forming the second P-type insertion layer comprises:
the fifth step: introducing an indium source;
a sixth step: introducing a gallium source, an aluminum source, an arsenic source, a phosphorus source and a zinc source;
a seventh step of: closing an aluminum source, an arsenic source, a phosphorus source and a zinc source, and only introducing at least one of an indium source and a gallium source;
an eighth step: and closing at least one of the indium source and the gallium source.
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