JP3215297B2 - Method for manufacturing semiconductor light emitting device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device, particularly a semiconductor light emitting device suitable for use in a communication system, an optical information processing system, and the like.

[0002]

2. Description of the Related Art Conventionally, as a method of manufacturing a semiconductor light emitting device of this kind, Japanese Patent Application Laid-Open No. 6-90061 (Japanese Patent Application No. 4-240) has been proposed.
No. 565) is disclosed. According to this publication, for example, on a semiconductor substrate such as an InP substrate,
Good double hetero (DH) structure eg InP / InG
After growing the crystal layer of aAsP, the crystal layer having the DH structure (hereinafter simply referred to as the DH crystal layer or the DH structure) is made of a material different from that of the semiconductor substrate, that is, a semiconductor substrate of a different kind, for example, It has been proposed that by directly bonding on a Si substrate, it is possible to integrate an electric circuit formed on this heterogeneous semiconductor substrate and a good light emitting element made of InP / InGaAs or the like. .

[0003]

However, according to the method disclosed in this publication, after growing a DH crystal layer on a substrate,
The surface of this crystal layer and the heterogeneous semiconductor substrate are brought into direct contact with each other,
After that, the DH crystal layer and the heterogeneous semiconductor substrate are bonded to each other at the contact surface by heat treatment. Thereafter, the heterogeneous semiconductor substrate is polished to a thickness that can be cleaved, and then the semiconductor substrate is etched and thinned, and thereafter, a laser device is manufactured using the DH crystal layer.

According to this conventional method, the difference in the thermal expansion coefficient between the semiconductor substrate for growing the DH crystal layer and the heterogeneous semiconductor substrate which is finally joined to the DH crystal layer to form a semiconductor light emitting device is determined. For this reason, the above-described heat treatment causes distortion in the DH crystal layer and both substrates. Therefore, if the thinning treatment is performed by mechanical polishing or chemical etching after the heat treatment, the two substrates may be cracked or the DH crystal layer may be peeled off. there were.

Further, since the surface of the DH crystal layer forming the bonding surface with the heterogeneous semiconductor substrate is also far from the surface of the semiconductor substrate on which the DH crystal layer has been grown, dust adheres to the surface, and crystal projections occur. In some cases, a flat surface may not be formed due to the crystal growth, and therefore, in this conventional method, it is necessary to use a very advanced crystal growth technique to make the surface of the DH crystal layer flat.

Therefore, there has been a demand for a method of manufacturing a semiconductor light emitting device which does not particularly require a very advanced crystal growth technique and has a high manufacturing yield.

[0007]

According to the manufacturing method of the present invention, a semiconductor light emitting device is manufactured by the following steps.

(A) First, an etch stop layer and a crystal layer having a double hetero structure (DH crystal layer) are sequentially grown on a semiconductor substrate.

(B) Next, the surface of the DH crystal layer is fixed to a supporting substrate using an adhesive.

(C) Next, the semiconductor substrate and the etch stop layer described above are removed by sequentially performing chemical etching in two stages. By this removal, the surface of the DH crystal layer opposite to the support substrate is exposed.

(D) Next, the exposed surface of the DH crystal layer is washed.

(E) On the other hand, the surface of a heterogeneous semiconductor substrate having a different lattice constant from the above-mentioned semiconductor substrate is cleaned.

(F) Next, the exposed surface of the above-mentioned DH crystal layer and the surface of this heterogeneous semiconductor substrate are directly adhered and fixed.

(G) Next, the adhesive is removed to obtain a structure in which the heterogeneous semiconductor substrate and the DH crystal layer are adhered and fixed.

(H) Next, this structure is heat-treated to bond the DH crystal layer and the heterogeneous semiconductor substrate.

(I) Thereafter, a light emitting device is manufactured using the DH crystal layer of this structure.

In practicing the present invention, it is preferable that the chemical etching of the semiconductor substrate in the above-mentioned step (c) is performed sequentially in two stages.

According to a preferred embodiment of the present invention, the semiconductor substrate is an InP substrate and the etch stop layer is an InG substrate.
aAs layer with double heterostructure of InP / InGaAs
An sP structure, and a heterogeneous semiconductor substrate is a Si substrate or GaAs
An s substrate is preferable.

Further, according to a preferred embodiment of the present invention,
The semiconductor substrate is a GaAs substrate, and the etch stop layer is A
1GaAs layer and double heterostructure GaAs / Al
It is also possible to use a GaAs structure and use a GaAs substrate as the heterogeneous semiconductor substrate.

[0020]

As described above, according to the manufacturing method of the present invention, D
After providing a support substrate on the surface of the H crystal layer opposite to the semiconductor substrate on which the H crystal layer was grown, the semiconductor substrate was removed to make it thinner, and thereafter, the semiconductor substrate appeared. A structure in which a heterogeneous semiconductor substrate is directly adhered and fixed to the exposed surface of the DH crystal layer opposite to the support substrate, and then a heat treatment is performed to join the DH crystal layer and the heterogeneous semiconductor substrate at the adhered surface; Has become.

Therefore, according to the present invention, the thinning treatment by mechanical polishing or chemical etching is performed at an appropriate stage before the heat treatment for bonding is performed, so that the substrate and the DH crystal layer are not thermally strained. Thin film processing can be performed. Therefore, according to the present invention, there is no possibility that the substrate or the DH crystal layer is cracked or peeled off due to the conventional thermal strain, and as a result, the production yield is surely improved.

Further, in the present invention, the DH crystal layer and the heterogeneous semiconductor substrate are joined to each other on the surface of the DH crystal layer (which is also the lower surface of crystal growth) on the side of the semiconductor substrate on which the DH crystal layer has been grown. I have. By the way, when a DH crystal layer is grown on a semiconductor substrate, as the crystal grows sequentially from the semiconductor substrate side, the attachment of dust and the growth of protrusions on the upper surface of the crystal growth have conventionally been increased. Are known. Therefore, in the case of the present invention, the crystal growth surface on the semiconductor substrate side, that is, the lower surface of the DH crystal layer is used. In the region of the crystal layer on the lower surface side, there is no attachment or protrusion growth of the dust, or even if it is present, it occurs only to the extent that it does not substantially hinder it.
This crystal growth surface can be said to be a substantially flat surface. Therefore, according to the present invention, in order to make the bonding surface of the DH crystal layer with the heterogeneous semiconductor substrate flat, unlike the conventional case, there is no need for a very advanced crystal growth technique.

According to the present invention, the chemical etching of the semiconductor substrate is performed in two stages, so that when the semiconductor substrate is thick, the etching depth can be prevented from becoming uneven during the etching process. That is, the surface exposed by etching and removing the semiconductor substrate can be made a flat surface, and the bonding between the heterogeneous semiconductor substrate and the DH crystal layer in the subsequent process can be performed well, thereby improving the production yield. I can plan.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the present invention will be described below with reference to the drawings. It should be noted that the figures are to the extent that the present invention can be understood.
It merely shows the shape, size and arrangement relationship schematically. Also, diagonal lines and the like to be added to portions representing sections are partially omitted.

In the embodiments described below, a case will be described in which a typical laser device having a double heterostructure of InP / InGaAsP is formed as a light emitting device.

FIG. 1 is a manufacturing flowchart for explaining a method of manufacturing a semiconductor light emitting device according to the present invention. 2 to 5
2 is a manufacturing process diagram for explaining an embodiment of the present invention. In particular, FIG. 2 shows a double hetero (D
H) Illustration of the method of forming the structure, showing the resulting structure in cross section. FIG. 3 shows a process after the structure including the initial semiconductor substrate and the DH structure is bonded to a support substrate (also referred to as a support) until the initial semiconductor substrate is removed. FIG. 4 shows a step of once fixing the DH structure to which the support is adhered to the heterogeneous semiconductor substrate, removing the support, and then performing a heating (annealing) treatment to join the DH structure and the heterogeneous semiconductor substrate. Is shown. FIG.
Finally, a process of manufacturing a laser device as a light emitting device using the DH structure is shown.

In the present invention, a first conductivity type InP substrate having a thickness of, for example, about 350 μm is prepared as an initial semiconductor substrate. In the following embodiments, the first conductivity type will be described as the p conductivity type and the second conductivity type will be described as the n conductivity type, but the reverse combination may be used. In the following description, description of the conductivity type will be omitted unless it is particularly necessary.

According to the present invention, an etch stop layer 12 and a crystal layer 20 having a double hetero (DH) structure are sequentially grown on the InP substrate 10 (step S1, FIG. 2 in FIG. 1). The double hetero (DH) structure crystal layer is
Hereinafter, it is simply referred to as a DH structure or a DH crystal layer 20. In this embodiment, first, p-type InG
An aAs layer is grown by a conventionally known method. Next, this D
An H structure 20 is grown on the p-type InGaAs layer 12 by a known method. In this embodiment, a p-type InP layer 22 as a first cladding layer and an InGaAsP layer 2 as an active layer
4. n-type InP layer 26 as a second cladding layer and n-type InGaAs as a cap layer (also referred to as a protective layer)
The s layer 28 is grown sequentially. This etch stop layer 1
All of the layers 2 and the DH crystal layer 20 are grown under conditions such that the lattice constant matches the lattice constant of the substrate 10 as much as possible, that is, the lattice constant substantially matches the lattice constant of the substrate 10. Generally, the lattice constant of the substrate 10 on which the DH crystal layer is to be grown is a, and the lattice constant a and the etch stop layer 12
And 差 a / a is smaller than 10 ⁻⁴ , assuming that the difference between the lattice constant of each layer of the DH crystal layer 20 and the DH crystal layer 20 is △ a, the DH structure 20 is regarded as having the lattice constant matching with the substrate 10. obtain.

Next, according to the present invention, the DH crystal layer 20
Is fixed to the support substrate 30 using an adhesive 32 (Step S2 in FIG. 1). In this embodiment, a support substrate (support)
30 is sufficient if the surface has a flat surface and elasticity, and the structure including the substrate 10 and the DH crystal layer 20 cannot be directly handled, for example, it is so thin as about 3 μm and cannot be grasped with a fingertip. It functions as an auxiliary means for reinforcing this and supporting it easily. The softer the support may be, the easier it is to contact the DH crystal layer. As the support 30, preferably,
A cover glass (product name) (thickness: 0.13-0.17 mm) manufactured by Matsunami Glass is used.

The adhesive needs to be capable of temporarily attaching and fixing the DH crystal layer and the support, to withstand selective etching performed halfway, and finally to be able to easily peel off the adhesive. In some cases, when the surface of the support is uneven, it is necessary to embed the unevenness so that it can be firmly adhered as a flat surface with an adhesive. Therefore, in this embodiment, a wax is used as the adhesive, and preferably, a protective wax K.I. P. W. -C (trade name) (softening point is 1
(Around 100 ° C.).

Therefore, in this embodiment, first, the cover glass 30 is placed on a hot plate 34 having a flat surface, and the hot plate 34 is heated to an appropriate temperature in the range of 120 to 130 ° C. The wax 32 is pressed against the upper side of the glass to melt (FIG. 3A). still,
3 and 4, only the wax 32 is hatched to emphasize the wax 32.

Next, the growth surface of the DH crystal layer 20 on the side farthest from the substrate 10, ie, the upper surface of the cap layer 28, is attached to the cover glass 30 via the wax 32, , Etch stop layer 12 and D
The structure composed of the H crystal layer 20 is fixed to the support substrate 30 (FIG. 3B).

Next, the structure on which the support substrate 30 is fixed is picked up from the hot plate, and the semiconductor substrate 10 and the etch stop layer 12 are sequentially removed by chemical etching (step S3 in FIG. 1). Therefore, in this embodiment, first, the structure having the DH structure fixed to the cover glass 30 shown in FIG. 3B is immersed together with the cover glass in the first etchant. In this case, preferably it is good to the etchant and Br-CH ₃ OH etchant. The first-stage chemical etching is performed with this etchant until the thickness of the InP substrate 10 becomes about 100 μm (FIG. 3C). In the drawing, the remaining portion of the substrate is indicated by 10a.

Subsequently, the remaining portion 10a of the substrate 10 (substrate remaining portion) 10a is removed using a second etchant (FIG. 3).
(D)). The second etchant is preferably HCl. This second etchant is made of InGa which is the material of the underlying etch stop layer 12.
As is a selective etchant that is not etched. By using such a selective etchant, the etching of the substrate can be automatically stopped when the lower etch stop layer 12 appears.

Further, in particular, since the HCl etchant roughens the surface during the etching, it is necessary to perform the etching before the second etching.
Good idea to etching by the Br-CH ₃ OH etchant the thickness of the substrate to some extent. Such Br-
2 with CH ₃ OH etchant and HCl etchant
By the step chemical etching, the etching can be advanced uniformly, and the substrate 10 can be removed without leaving a part of the substrate 10.

Next, the etch stop layer 12 is removed by chemical etching. In this case, the lower first cladding layer 2
A selective etchant that does not etch the InGaAs layer 2 is used. In this embodiment, preferably, H
_It is preferable to use a mixed solution of ₂ SO ₄ : H ₂ O ₂ : H ₂ O = 3: 1: 1 as a selective etchant. The etch stop layer 12 is removed by etching to expose the surface of the first cladding layer 22 (FIG. 3E).

Next, the exposed surface of the first cladding layer 22 is cleaned (step S4 in FIG. 1). This washing is sufficiently performed by washing with water. This cleaning surface becomes a bonding surface with a heterogeneous semiconductor substrate described later. By the way, the first cladding layer 2
The flatness of the cleaning surface of No. 2 depends on the flatness of the surface of the InGaAs layer which is the etch stop layer 12 first grown on the substrate 10. In crystal growth, it has been found that dust adhesion and projection growth generally increase as the thickness of the growth layer increases, that is, as the growth time increases, and as the number of growth layers increases. Explaining with the structure shown in FIG. 2, the surface of the InGaAs layer (etch stop layer) 12 is higher than the InGaAs layer (cap layer).
The surface of No. 28 has more dust and protrusions, and the flatness of the surface is often lost. Therefore, the first layer 20 and the second layer 22 are used instead of using the surface of the final growth layer as a bonding surface.
The use of the interface with the surface as a bonding surface reduces the influence of dust and protrusions, and is more flat. Therefore, as long as the growth surface on the substrate 10 side of the second growth layer 22 forming this interface is used as a bonding surface, a high technical demand for crystal growth conventionally required for forming a flat surface is required. According to the present invention, the manufacturing yield can be improved.

Next, a heterogeneous semiconductor substrate having a different lattice constant from the semiconductor substrate 10 used initially is prepared. In this embodiment, as this heterogeneous semiconductor substrate, Si or GaAs of a material different from InP, which is the material of the initial semiconductor substrate, is used.
Although a substrate is used, a description will be given here using a Si substrate as an example. First, the surface of the Si substrate 50 is usually cleaned because the surface is polished (Step S5 in FIG. 1). For this reason, this Si substrate 50 is first converted to H ₂ S
After the treatment with the O ₄ : H ₂ O ₂ solution, the substrate is washed with water for about 5 minutes, and then subjected to a buffered hydrofluoric acid treatment for about 30 seconds in order to remove a natural oxide film formed on the surface. After that, wash with water for 2 minutes or more. Then, the Si substrate 50 thus cleaned is cleaned.
And a DH in which the support substrate 30 is fixed with wax 32.
The crystal layer 20 is dried by spin drying. Immediately thereafter, the cleaned surface of the Si substrate and the cleaned surface of the first cladding layer 22 of the DH crystal layer 20 are opposed to each other (FIG. 4A).

Then, the two opposing surfaces are immediately brought into close contact with each other at room temperature without using any adhesive or the like to obtain an adhered structure (step S6 in FIG. 1, (B) in FIG. 4). At this time, it is preferable to use a suitable pressing tool such as a pair of tweezers to lightly press the both sides from the both sides over the entire surface so as to ensure the close contact.

It should be noted that such a contact step between the Si substrate and the DH structure is preferably performed before the respective cleaning surfaces are contaminated. Therefore, it is preferable that the cleaning of the exposed surface of the DH crystal layer and the Si substrate be performed in parallel, and that the cleaning be performed immediately after the cleaning without any time.

Next, the wax 32 which is the adhesive used when bonding the support substrate 30 is removed. Therefore, a solvent for dissolving the wax 32, for example, a wax solvent 60 such as trichlorene or Sorphan ™ in this embodiment.
Next, the adhesive structure on which the support substrate 30 is fixed is immersed in wax, and the solvent is heated (FIG. 4C). By this processing, the wax 32 is dissolved in the solvent, and the supporting substrate, that is, the cover glass 32 in this case, is also
Peel from When this is taken out from the solvent, an adhesive structure including the Si substrate 50 and the DH crystal layer 20 as shown in FIG. 4D is obtained.

Next, this adhered structure is placed in an annealing furnace and heat-treated to bond the DH crystal layer 20 and the Si substrate 50, which is a heterogeneous semiconductor substrate (step S7 in FIG. 1).
Bonding in this case means that the D
This means that the H crystal layer 20 and the Si substrate 50 are integrally connected. This annealing is performed in a hydrogen atmosphere with a suitable weight in the range of about 30 to 300 g / cm ² placed on the contact structure under a load. Preferably, the annealing temperature is increased or decreased by, for example, increasing the heating rate to 200 ° C. so that annealing is performed slowly over a long period of time.
/ Hour, and the temperature drop rate is preferably 200 ° C./hour. In addition, the maximum temperature of the annealing after the temperature is raised is about 40.
It is preferable that the temperature is reduced to 0 ° C., maintained at this temperature for about 30 minutes, and then lowered. As described above, the DH crystal layer 20 and the Si substrate are not thermally strained due to the slow temperature rise and the temperature fall, and even if the thermal strain is caused, the strain is only to the extent that there is substantially no obstacle. Absent.

Next, a laser device as a light emitting device is fabricated using the DH crystal layer 20 (step S in FIG. 1).
8). An example of creating a laser structure for obtaining this laser oscillation will be described with reference to FIG. In FIG. 5, only the electrodes are hatched to emphasize the electrodes. Here, for example, 2-2 is formed on the cap layer 28 of the DH crystal layer 20.
A second conductive type electrode 70 of about 0 μm is formed by vapor deposition (FIG. 5A). Subsequently, using the electrode 70 as an etching mask, the surface from the surface of the cap layer 28 to the active layer 24 is mesa-etched to form the first clad layer 2.
The surface in contact with the second active layer 24 is exposed (FIG. 5B). Next, a first conductive type electrode 72 is provided on the surface of the first cladding layer 22 around the mesa structure including the electrode 70, the cap layer 28, the second cladding layer 26, and the active layer 24, and the laser structure is formed. (FIG. 5C).

Next, a Si substrate 50 which is a heterogeneous semiconductor substrate
Is polished so that the Si substrate is easily cleaved (Step S9 in FIG. 1). The initial thickness of the Si substrate 50 is such that the final thickness can be about 50 μm. For example, 300μ
m. This polishing is preferably performed by using an abrasive such as Al ₂ O ₃ and cleaved so as to have an appropriate resonator length to complete a light emitting element, that is, a laser element here.

In the above-described embodiment, an InP substrate is used as an initial semiconductor substrate on which a DH crystal layer is to be grown.
An example in which a crystal layer having an nP / InGaAsP double hetero structure is grown and a Si substrate is used as a heterogeneous semiconductor substrate has been described. However, the present invention is not limited to this embodiment. For example, an InP substrate may be used as an initial substrate. InP
A crystal layer having a double hetero structure of / InGaAsP may be grown, and a GaAs substrate may be used as a heterogeneous semiconductor substrate.
Even when a crystal layer having a double hetero structure of s / AlGaAs is grown and a Si substrate is used as a heterogeneous semiconductor substrate, it can be manufactured in the same manner as in the above-described embodiment.

[0046]

As is apparent from the above description, according to the method for manufacturing a semiconductor light emitting device of the present invention, the supporting substrate is provided on the surface of the DH crystal layer opposite to the semiconductor substrate on which the DH crystal layer has been grown. After the provision, the semiconductor substrate is removed to reduce the film thickness.
A heterogeneous semiconductor substrate is directly adhered and fixed to the exposed surface of the H crystal layer opposite to the support substrate, and then heat treatment is performed to join the DH crystal layer and the heterogeneous semiconductor substrate at the adhered surface. .

Therefore, according to the present invention, the thinning treatment by mechanical polishing or chemical etching is performed at an appropriate stage before the heat treatment for bonding is performed, so that the substrate and the DH crystal layer are not thermally strained. Thin film processing can be performed. Therefore, according to the present invention, there is no possibility that the substrate or the DH crystal layer is cracked or peeled off due to the conventional thermal strain, and as a result, the production yield is surely improved.

Further, in the present invention, the DH crystal layer and the heterogeneous semiconductor substrate are joined to each other on the surface of the DH crystal layer on the semiconductor substrate side on which the DH crystal layer is grown (which is also the lower surface of the crystal growth). I have. In the region of the crystal layer on the lower surface side, there is no adhesion of dust or growth in the form of protrusions, or even if they are present, they occur to such an extent that they do not substantially hinder the growth. Since the surface is substantially a flat surface, it is not necessary to use a very advanced crystal growth technique unlike the related art in order to make the bonding surface of the DH crystal layer with the heterogeneous semiconductor substrate flat. .

According to the present invention, the chemical etching of the semiconductor substrate is performed in two stages, so that when the semiconductor substrate is thick, it is possible to prevent the etching depth from becoming uneven during the etching process. That is, the surface exposed by etching and removing the semiconductor substrate can be made a flat surface, and the bonding between the heterogeneous semiconductor substrate and the DH crystal layer in the subsequent process can be performed well, thereby improving the production yield. I can plan.

[Brief description of the drawings]

FIG. 1 is a flowchart for explaining a method for manufacturing a semiconductor light emitting device of the present invention.

FIG. 2 is a cross-sectional view of a growth layer having a DH structure for explaining the method of the present invention.

FIGS. 3A to 3E are process diagrams for explaining a process from bonding a structure including an initial semiconductor substrate and a DH structure to a supporting substrate to removing the initial semiconductor substrate; FIGS. It is.

4 (A) to 4 (D) show that, once a DH structure with a support substrate is fixed to a heterogeneous semiconductor substrate, the support substrate is removed, and then a heating (annealing) process is performed to obtain a DH structure. FIG. 4 is a process diagram for describing a process of bonding with a different kind of semiconductor substrate.

FIGS. 5A to 5C are process diagrams for explaining a process of finally manufacturing a laser device as a light emitting device using a DH structure.

[Explanation of symbols]

 10: InP substrate 12: Etch stop layer 20: DH crystal layer 22: First cladding layer 24: Active layer 26: Second cladding layer 28: Cap layer 30: Support substrate 32: Adhesive 34: Hot plate 50: Si substrate 60: solvent 70, 72: electrode

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-6-302857 (JP, A) JP-A-4-10536 (JP, A) JP-A-6-90061 (JP, A) JP-A-58-58 206184 (JP, A) JP-A-7-240383 (JP, A) JP-A-5-267790 (JP, A) JP-A-6-224404 (JP, A) JP-A-7-335967 (JP, A) JP-A-6-296040 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 H01L 33/00

Claims (3)

(57) [Claims] (A) a step of sequentially growing an etch stop layer and a crystal layer having a double heterostructure on a semiconductor substrate; and (b) fixing the surface of the crystal layer to a support substrate using an adhesive. (C) removing the semiconductor substrate and the etch stop layer by sequentially performing chemical etching in two stages; (d) cleaning the exposed surface of the crystal layer; and (e). (F) cleaning the surface of the heterogeneous semiconductor substrate having a different lattice constant from the semiconductor substrate; and (f) fixing the exposed surface of the crystal layer and the surface of the heterogeneous semiconductor substrate in close contact with each other; g) removing the adhesive to obtain a structure in which the crystal layer is adhered and fixed to the heterogeneous semiconductor substrate; and (h) heat treating the structure to separate the crystal layer from the heterogeneous semiconductor substrate. Joining process , (I) Then, a method of manufacturing a semiconductor light emitting device characterized by comprising a step of making a light emitting device using the crystal layer of the structure. 2. The method for manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is an InP substrate, an etch stop layer is an InGaAs layer, and the double heterostructure is InP /
A method for manufacturing a semiconductor light emitting device, having an InGaAsP structure, wherein the heterogeneous semiconductor substrate is a Si substrate or a GaAs substrate. 3. The method according to claim 1, wherein the semiconductor substrate is a GaAs substrate, the etch stop layer is an AlGaAs layer, and the double hetero structure is GaAs.
s / AlGaAs structure, and the heterogeneous semiconductor substrate is Ga
A method for manufacturing a semiconductor light emitting device, comprising an As substrate.