JP2014017459A - Light device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a planar light-emitting black body spectrum LED light device which is a single planar light-emitting light source and which can control light distribution and has high luminance and a significant power.SOLUTION: A planar light-emitting black body spectrum LED light device having high luminance and a significant power comprises an optical system including: a metal substrate provided with a stripe-shaped shield wall; a plurality of LED bare chips bonded to a surface of the metal substrate; a circuit board; an internal reflection frame which is a sealing frame adhering to the surface of the metal substrate and encompassing the LED bare chips which form wiring connection with a whole or a part of the circuit board; and a transparent phosphor sheet in which phosphors of a quantity corresponding to a radiation spectrum at a black body temperature obtained by addition of fluorescent spectra where R, G, B phosphors produce fluorescences, respectively are independently printed on transparent sheets or a transparent phosphor sheet in which phosphor films independently formed into films are sandwiched between transparent bodies. The optical system uses the transparent phosphor sheet as a focus.

Description

      The present invention relates to LED lighting. More specifically, the present invention relates to a planar light emitting module in which a plurality of LED bare chips are connected, a plurality of LED bare chips are arrayed, and a phosphor is printed on a transparent sheet as a light source, and a high output lighting device capable of controlling color rendering and light distribution.

  The appearance of the object by the light source, that is, the color rendering, varies depending on the light bulb, fluorescent lamp, mercury lamp, xenon lamp, and the like. What is called white light also depends on the color temperature.

  Japanese Patent Application Laid-Open No. 2004-253309 (Patent Document 1) states that ““ LED illumination having three different chromaticity LEDs, a red LED, a blue LED, and a green LED, the LED illumination being emitted from the LED illumination. LED control means for controlling the light emission to a desired chromaticity, wherein the LED control means controls the drive current or / and drive voltage of the LED based on a predetermined function with respect to the temperature change of the LED, and from the LED illumination The LED light is controlled to white light, and the LED control means drives the LED of any one chromaticity at a constant current. (Claim 9), "More standard light source. In order to obtain near white light, etc., it is equipped with a plurality of light emitting diode (LED) light sources that emit light with different wavelength bands, and the light emitted from these light sources is mixed and reproduced. In lighting equipment that produces and irradiates white light with a color rendering property of 85% or more, differences in deterioration due to the type of light source and changes over time, light emitting diodes (LEDs) and light receiving sensors (phototransistors, etc.) ) With a color balance of 85% or more that is simple, stable and highly reproducible, highly reliable color rendering without being affected by variations in light intensity, brightness, and light sensitivity between lots. Illuminating device having a dimming function capable of irradiating white light or the like "(paragraph number 0010)," In this embodiment, as shown in FIG. 6, the wavelength near yellow particularly near 600 nm is broad. In addition, a wide emission spectrum is acquired over the entire visible range, and white light with high color rendering white balance can be obtained with good reproducibility and stability. Moreover, since this illumination light is obtained with three types of LEDs, a red LED, a green LED, and a YAG-type white LED, it is more useful than an illumination composed of three or more types of LEDs. It is excellent in light weight, can be easily configured with current sources, control devices, switches, etc., and is excellent in cost and mass production effects.Besides the light receiving sensor is composed of three types of RGB that have a great influence on human visual sensitivity, illumination light It can reduce the influence of the white balance collapse and the color rendering deterioration with respect to the brightness change, and can produce a favorable light that is outstanding in the stability and balance effect as lighting for light and dark dimming. "(Paragraph number 0050), FIG. 6" is described.

Japanese Patent Laid-Open No. 2011-44741 (Patent Document 2) states that ““ The phosphor film 8 is received by the Si substrate 4 and the side surface of the semiconductor multilayer film 6 and the main surface opposite to the Si substrate ( The phosphor film 8 is formed of, for example, (Ba, Sr) MgAl ₁₀ O ₁₇ : Eu ²⁺ or (Ba, Sr) as a blue phosphor on a translucent resin such as silicone. , Ca, Mg) ₁₀ (PO ₄ ) ₆ Cl ₂ : Eu ^{2+ and the} like, and green phosphors such as BaMgAl ₁₀ O ₁₇ : Eu ²⁺ , Mn ²⁺ and (Ba, Sr) ₂ SiO ₄ : Eu ²⁺ at least one from, for example, as a yellow phosphor _{(Sr, Ba) 2 SiO 4} : at least one of ^{Eu 2+,} a red phosphor as for example _La 2 _O 2 S: ^{Eu 3+} and CaS Eu ²⁺ and _{(Ca, Sr, Ba) 3} Si 5 N 8:. Made from those etc. ^{Eu 2+} is dispersed at least one four-color phosphor powder and metal oxide fine particles such as SiO ₂ of yet, Toru An epoxy resin or a polyimide resin may be used as the light-sensitive resin, and the phosphor film 8 has a substantially uniform thickness over the whole ”(paragraph number 0031),“ on the ceramic substrate 316. After the LED chip 2 is mounted, the LED chip 2 is covered with a silicone resin 326 or the like as a first resin, and a lens 304 is formed by injection molding using an epoxy resin 328 or the like as a second resin.
The 17 LED chips 2 are connected in 31 series and 7 in parallel by a wiring pattern 330 formed on the upper surface of the ceramic substrate 316. (Paragraph Nos. 0146 to 0147), “When lighting device 334 is powered from a commercial power supply, white light is emitted from each LED chip 2 and emitted through lens 304 as described above.
As typical characteristics when a current of 1 A was passed through the LED module 300, the total luminous flux was 4,000 lm and the central luminous intensity was 10,000 cd. The emission spectrum was as shown in FIG. "(Paragraph number 0155), FIG. 27, FIG. 29, FIG. 31, FIG. 33".

JP 2003-535477 A (Patent Document 3) states, ““ In the present invention, a completely new concept based on BGG mixing, that is, a combination of blue, yellow and green, is used for the first time. In this case, what is important is that The yellow phosphor has a wide band and has a sufficient emission component in the red spectral region, in particular at least 20% of the total emission of this phosphor has a visible region in the spectral region of 620 nm or more. (0007), “In yet another advantageous embodiment of a white LED, in addition to an InGaN chip (blue emission at 450 nm), the above chlorosilicate phosphor (CS: Eu). ) Is used in combination with YAG: Ce, which is characterized in that the temperature quenching behavior of both phosphors is very equal. Is evident in Figure 6. The temperature quenching behavior of both phosphors is practically similar over a reliable use area (up to about 100 ° C) and is only slightly dependent on temperature. for example, where the measured was mixed garnet _{(Y 0 .33 Gd 0.63 Ce 0.04} ) in other garnets, such as Al _{5 O 12,} temperature homeostasis is significantly inferior (mixture garnet 6 (Represented by (Y, Gd) AG: Ce), which ensures special constancy of chromaticity coordinates and other optoelectronic data in this example under a wide variety of temperature conditions. This example contains a large amount of Y (or Tb) as SE (at least 60 mol% of the SE lattice site) The emission spectrum of this example is shown in FIG. color Corresponding to the degree and chromaticity coordinates x = 0.294 and y = 0.309, the color reproduction is Ra = 77 The mixing ratio of both phosphors is 4.6: 1. """.

  Japanese Patent Application No. 2011-174361 (Patent Document 4) states that ““ a plurality of high-power light-emitting elements are composed of a light source and a lens system that are bonded to a metal substrate, a sealing frame, etc., and the heat is exhausted through a heat sink or heat radiating fins. Therefore, even if the light emitting elements are integrated at a high density, heat storage is suppressed, light can be emitted efficiently and continuously, and phosphor particles can be dispersed by dispersing the phosphor in a sealing material. It becomes a light source and acts as if it is a single light source inside the sealing frame. A new high-brightness, high-power LED lighting device that controls light distribution over short and long distances with no illuminance unevenness has been realized by the mechanism of light distribution control of the light source for heat transport and planar light emission. (Paragraph number 0093) There is a description that.

JP 2004-253309 A JP 2011-44741 A JP 2003-535477 A Japanese Patent Application No. 2011-174361

  However, in order to achieve high output and high luminance, it is necessary to use a large number of LEDs and to apply a high load. The high-load LED generates heat when driven, and the radiation intensity decreases when the temperature becomes high. When LED lamps are arrayed, illumination unevenness occurs. When a large number of LED bare chips are integrated and arrayed, the temperature rapidly rises, so that the radiation intensity decreases rapidly, leading to malfunction.

Further, when the phosphor is directly applied to a large number of LED bare chips, it is difficult to control the color rendering properties. At the same time as obtaining a continuous spectrum such as pseudo-sunlight, it is required to provide a lighting device that can emit arbitrary visible light as required.
The present invention is a single light source with a high luminance and a high output, which emits a single light source. A high luminance and a high output which can control the color distribution by controlling the light distribution reaching a short distance and a long distance. An object of the present invention is to provide a flat-light-emitting black body radiation spectrum type LED lighting device.

  As a result of diligent research, the inventor of the present application directly joined and adhered a plurality of LED bare chips to a substrate such as a metal with high thermal conductivity having a striped shielding wall for suppressing the temperature rise of the LED bare chips. The heat generated from the LED bare chip is transferred to the substrate such as metal and the sealing frame, and the substrate such as metal and the heat sink, heat pipe and heat radiating fin are joined, and a large amount of heat is transported and exhausted. In the space on the excitation light side of the integrated LED bare chip, the calculated area amount of each phosphor emitting R, G, B fluorescence is printed on a transparent sheet or sandwiched between transparent bodies The present invention was completed by controlling the light distribution using a lens system in which an object is arranged and using this as a point light source, and the above-mentioned problems have been solved. That is,

  The inventor of the present application also coped with the color rendering properties by appropriately replacing and inserting a printed sheet or the like printed in a mosaic form of phosphors calculated from the wavelength range requiring R, G, and B phosphors, The present invention realizes a new flat-light-emitting blackbody radiation spectrum type LED lighting device with high brightness and high output, which controls light distribution at short distances and long distances without uneven illuminance.

  The illumination device of the present invention includes a metal substrate having a striped shielding wall, a plurality of LED bare chips bonded to the surface of the metal substrate, a circuit board, and a sealing frame that is in close contact with the surface of the metal substrate. And an internal reflection frame surrounding the plurality of LED bare chips connected to all or a part of the circuit board and a fluorescence spectrum in which each of the R, G, and B phosphors emits fluorescence. A phosphor transparent sheet in which phosphors of an amount corresponding to the radiation spectrum of body temperature are independently printed on a transparent plate, or a phosphor transparent sheet in which each phosphor film formed into a film is sandwiched between transparent bodies, Before attaching the shielding wall and / or the sealing frame and the phosphor transparent sheet by bonding, intimately or adhering the back surface of the metal substrate to a heat sink, heat pipe and / or heat radiating fin Close contact with the internal reflection tube, high brightness, characterized in that to close or contacting a black body radiation spectrum type LED lighting apparatus of a novel flat light emitting large output.

  In the illuminating device of the present invention, the metal substrate and the shielding wall have a plate shape of each of a metal, an alloy, a semiconductor compound, and carbon each having a thermal conductivity (W / m * K) in the range of 100 to 10,000. Includes at least one selected from those. In particular, the metal substrate is preferably at least one selected from brass, aluminum nitride, gallium nitride, aluminum, gold, silver, copper, coal, graphite, diamond, and graphene.

  The LED bare chip is preferably a blue LED having a radiation wavelength peak of 430 to 480 nm and / or a purple LED having a wavelength of 380 to 420 nm.

  The illuminating device of the present invention has fluorescent wavelength peaks of 455 ± 5 nm, 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 541 ± 5 nm, 591 ± 5 nm, 627 ± 5 nm, 646 as the R, G, B phosphors. What is a fluorescent substance of ± 5 nm is also included in the black body radiation spectrum type LED lighting device.

  In the illumination device of the present invention, as the R, G and B phosphors, the fluorescence wavelength peaks due to the excitation light (440 to 460 nm) of the blue LED bare chip are 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 543 ± 5 nm, 591 The black body radiation spectrum type LED lighting device includes a phosphor having ± 5 nm, 627 ± 5 nm, and 646 ± 5 nm and having a spectral half width (FWHM) of 30 to 100 nm.

  The illumination device of the present invention is a nitride-based, barium-zirconium-silicon oxide phosphor as the R, G, B phosphor, and a blue LED having an emission wavelength peak of 430 to 480 nm and / or 380 to 420 nm. Fluorescence wavelength peaks of violet LEDs of 455 ± 5 nm, 4850 ± 5 nm, 543 ± 5 nm, 595 ± 5 nm, 627 ± 5 nm, 646 ± 5 nm, and the peak intensity ratio with respect to the pseudo-white LED phosphor YAG (P46Y3) It is also a black body radiation spectrum type LED illumination device characterized by being a phosphor having a spectral half width (FWHM) of 100 to 300 nm of 110% or more.

  The illuminating device of the present invention is a blackbody radiation spectrum type LED illuminating device characterized in that the phosphor transparent sheet is a composite with a thermally conductive mesh and / or metal-deposited. But there is.

  The illuminating device of the present invention is also a black body radiation spectrum type LED illuminating device further comprising a lens system mechanism capable of moving the upper surface direction of the phosphor transparent sheet of 30 to 300 mm.

  The lighting device of the present invention directly heats heat from the LED bare chip to the substrate such as metal and to the internal reflection frame by directly bonding and bonding a plurality of LED bare chips to the substrate such as metal having high thermal conductivity. By exhausting heat through heat sinks, heat pipes and heat radiating fins, light emitting elements can be densely integrated and arrayed, so that not only small lighting equipment, but also stadium floodlights, location spotlights, etc. It can be a large-sized, large-output, high-luminance lighting device for large spaces such as gymnasiums.

  Moreover, since the LED bare chip can be prevented from rising in temperature by providing the striped shielding wall, heat storage is suppressed, and the temperature rise of the LED bare chip integrated part is suppressed, so that the illuminance is reduced even by long-time illumination. Does not cause. The light emitted from the LED bare chip is efficiently radiated to the phosphor transparent sheet by the shielding wall and the sealing frame, so that the light emission efficiency is improved, and the heat generation due to the light emission of the phosphor is also conducted by the shielding wall to the temperature. Since the increase is suppressed, a decrease in luminous efficiency can be suppressed.

The LED bare chip can be integrated with high density, the phosphor particles of the phosphor transparent sheet serve as the light source, and the inside of the sealing frame acts like a single light source, so that the inside of the sealing frame is single The light source emits flat light, and the unevenness of illuminance hardly occurs, so that the irradiated object can be seen gently.
Further, by considering it as a flat light emitting single-type light source, a plurality of RGB spectra distributed in a mosaic shape are mixed, and a light source suitable for the radiation spectrum of the black body temperature can be obtained.
By changing the printing amount of the RGB phosphor, it is possible to obtain the required color rendering by simply replacing the phosphor transparent sheet.

Since a radiation spectrum with a black body temperature of 6000 K is obtained, pseudo sunlight can be realized by attaching a filter with ozone and water (mist, etc.), and it can be used as a test lighting device for photovoltaic power generation.
Furthermore, it is possible to control the illuminance distribution at short distance and far distance by controlling the light distribution by a lens system that uses this as a point light source, considering it as a flat light emitting single light source. It can be used for road lights and street lights.

1 is an overall conceptual diagram of an embodiment of a lighting fixture according to the present invention. It is a light source module part drawing of illuminating device embodiment of this invention. It is an example figure of the partition structure of a light source module part. It is a plane light emission module part drawing of illuminating device embodiment of this invention. It is an arrangement | sequence part drawing of the LED bare chip of embodiment of this invention lighting fixture. 3 is a heat dissipation system drawing of heat generated from a planar light emitting module. It is a fluorescence spectrum intensity | strength (relative value) figure of the used fluorescent substance. It is a fluorescence spectrum intensity | strength (relative value) figure of the used fluorescent substance. It is a fluorescence spectrum intensity | strength (relative value) figure of the used fluorescent substance. It is the obtained pseudo-sunlight continuous spectrum figure. It is the obtained pseudo-sunlight continuous spectrum figure. It is the figure which compared the typical sunlight spectrum, the typical fluorescent substance spectrum, and the spectrum of FIG.

The form for implementing regarding the illuminating device of this invention is described.
Hereinafter, a light emitting element in a bare chip state is referred to as an LED bare chip, and a light emitting element that is generally sealed with a commercially available sealing material is referred to as an LED element. Light emission from the LED is referred to as “excitation light”, and light emission from the phosphor is referred to as “fluorescence”.
The conceptual diagram of the illuminating device of this invention is shown in FIG. The light source module portion is shown in FIG. A planar light emitting module 10 in which a plurality of LED bare chips 21 are arranged in a concave portion of a highly thermally conductive metal substrate having a striped shielding wall, a plurality of RGB phosphors are emitted by the excitation light, and fluorescence is used as a light source; A new high-brightness, high-output flat surface mainly comprising a heat dissipation system 30 for diffusing and exhausting heat generated from the flat light-emitting module and a lens system 50 for controlling the light distribution using the flat light-emitting module 10 as a point light source. This is a light emitting black body radiation spectrum type LED lighting device 01.

Embodiment 1

[Mounting of LED bare chip]
[Structure and function of planar light emitting module]
2A, 2B, 3 and 4 show a schematic configuration of a flat light emitting module according to the present invention. The LED bare chip 21 is directly bonded to the concave surface of the metal substrate 12 having the shielding walls 14 that are partitioned into parallel stripes, connected in series, and connected to the circuit board 23 that drives and controls the LED bare chip. The shielding wall 14 has an action in which excitation light from the arranged LED bare chips is guided in the direction of the phosphor transparent sheet 25, an action to diffuse heat generated from the LED bare chips, and the like. The shape is not limited to the rectangular shape shown in the figure, and it is also preferable to regulate heat transport such as a tapered fin shape in the direction of the metal substrate.
A part of the internal reflection frame 18 is in contact with the circuit board 23, but a part of the internal reflection frame 18 is fixed and adhered to the metal substrate 12 with a transparent sealant. The internal reflection frame 18 has an R • G • B phosphor 26. -It has the insertion port 19 for replacing | exchanging the fluorescent substance transparent sheet 25 which each printed 27 and 28 in mosaic. Further, the internal reflection frame 18 can be divided into upper and lower parts, and the fitting portion is set to 19. In this case, the phosphor transparent sheet 25 is attached to the upper part of the internal reflection frame 18.
The internal reflection frame 18 also has a function of effectively and efficiently irradiating the phosphor with the irradiation light from the LED bare chip and conducting the generated heat to the heat dissipation system 30. A schematic diagram of the heat dissipation system is shown in FIG.

  Various LED bare chips such as ultraviolet LED bare chip, blue LED bare chip, green LED bare chip, and red LED bare chip can be mixed and used for LED bare chips that are directly bonded to the concave surface of the metal substrate 12, but with high brightness and high output. It is desirable to mainly use a blue LED bare chip and / or a purple LED bare chip from the viewpoints of obtaining, easy control, easy handling, safety and hygiene.

First, using a metal substrate 12 of a copper plate of (70 to 300) mm × (70 to 168 to 300) mm, the shielding wall pitch (3.5 to 7 to 9) mm is set, and the array pitch of the LED bare chips is (2 to 2). 3.5 to 5) mm.
Next, a blue LED bare chip having an excitation light peak at 430 nm to 480 nm is prepared. For example, the number of blue light bare LED B4545EC10 manufactured by GeneLite, which is calculated from the set output, is prepared. When a blue LED bare chip is connected to a series with a shielding wall pitch of 7 mm using a 72 mm square copper-plated metal substrate 12, if the arrangement pitch is about 3.5 mm, 200 blue LED bare chips will be prepared. Become. When this is driven at 3 V and 350 mA, a large output of about 200 W is obtained, and a wavelength of 450 to 460 nm and a light intensity of 74 W are given to the phosphor. Using a metal substrate 12 of a square copper plate of 72 mm, if the arrangement pitch of blue LED bare chips is 2 mm with a shield wall pitch of 5 mm, a large output of about 500 W with 490 pieces, a wavelength of 450 to 460 nm, and a light intensity of 148 W is a phosphor. To give. The maximum number of LEDs mounted is 60 × 150 = 9,000. That is, a large output of 9 KW.

Moreover, when the blue LED bare chip of OBL-CH6060 4XXBXX series GeneLite OBL-CH6060 4XXBXX series is used, the chip size is 1.5 × 1.5 mm, so the shielding wall pitch is 7 mm and the array pitch is 3.5 mm. 200 blue LED bare chips are integrated. When this is driven at 3 V and 700 mA, a large output of about 400 W is given to the phosphor.

  A purple LED bare chip of XCG-700-D manufactured by Mitsubishi Chemical Corporation is prepared. This is a purple LED bare chip having a light emission peak at a wavelength of 395 to 413 nm, has established a manufacturing technique of “m-plane GaN substrate”, has superior electrical characteristics compared to a conventional sliced GaN substrate, and has an excitation light efficiency. Considering the significant improvement and further performance improvement of each member such as RGB phosphors, the light emission efficiency was tripled compared with the existing white LED products.

  The fluorescence vector of each company's fluorescent substance with respect to the excitation light (peak wavelength 400nm) from the blue LED bare chip made from GeneLite (peak wavelength 455nm) and the purple LED bare chip made from Mitsubishi Chemical Corporation is measured. A Konica Minolta color luminance meter CS-2000 was used for the measurement. The same applies to the fluorescence spectrum intensity (relative value) measurement. The full width at half maximum was measured using MCPD7000 integrating sphere, Otsuka Electronics Co., Ltd.

First, a phosphor having a fluorescence wavelength peak from blue to green was selected.
A ratio of 8 wt% of a green phosphor having a fluorescence peak at a wavelength of 510 nm to 520 nm, for example, CaS _C2 O ₄ : Ce phosphor powder BG-301B (peak wavelength 518 nm, full width at half maximum FWHM = 100 nm) manufactured by Mitsubishi Chemical Corporation The phosphor dispersed in the silicone-based sealing material was formed into a coating film having a thickness of 1.0 mm.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength 455 nm) was irradiated to measure the fluorescence spectrum intensity. FIG. 6 shows a result obtained by normalizing the highest spectral intensity as 1. The data in FIG. 6 is normalized in the same manner.

8 wt% of a green phosphor having a fluorescence peak at a wavelength of 520 nm to 530 nm, for example, (BaSr) ₂ SiO ₄ : Eu phosphor powder BG-201B (peak wavelength 528 nm, half-value width FWHM = 67 nm) manufactured by Mitsubishi Chemical Corporation A phosphor dispersed in a silicone-based sealing material at a ratio of 1 to 10 mm was formed into a coating film having a thickness of 1.0 mm.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

8 wt% of a green phosphor having a light emission peak at a wavelength of 535 nm to 550 nm, for example, a nitride (β sialon) phosphor powder GR-240 (peak wavelength 541 nm, full width at half maximum FWHM = 53 nm) manufactured by Electrochemical Co., Ltd. A phosphor dispersed in a silicone-based sealing material at a ratio of 1 to 10 mm was formed into a coating film having a thickness of 1.0 mm.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

8 wt% of a green phosphor having a fluorescence peak at a wavelength of 520 nm to 530 nm, for example, (BaSr) ₂ SiO ₄ : Eu phosphor powder VG-201B (peak wavelength 528 nm, half-value width FWHM = 67 nm) manufactured by Mitsubishi Chemical Corporation A phosphor dispersed in a silicone-based sealing material at a ratio of 1 to 10 mm was formed into a coating film having a thickness of 1.0 mm. A purple LED bare chip manufactured by Mitsubishi Chemical Corporation was driven at a voltage of 3 V, and emitted excitation light (peak wavelength: 400 nm) was irradiated to measure the fluorescence spectrum intensity (relative value).
Blue phosphor having a fluorescence peak at a wavelength of 430 nm to 500 nm, for example, 8 wt% of Mitsubishi Chemical Corporation (BaMgAl ₁₀ O ₁₇ : Eu phosphor powder VB-101B (peak wavelength 455 nm, half width FWHM = 51 nm)) A phosphor dispersed in a silicone-based encapsulant at a ratio was made into a coating film having a thickness of 1.0 mm, and a purple LED bare chip manufactured by Mitsubishi Chemical Corporation was driven at a voltage of 3 V to emit excited light (peak wavelength). 400 nm), and the fluorescence spectrum intensity (relative value) was measured, as shown in FIG.

Next, a phosphor having a wavelength peak in yellow was selected.
A yellow phosphor having an emission peak at a wavelength of 590 nm to 600 nm, for example, 8 wt% of a nitride-based (α sialon) phosphor powder YL-C190 (peak wavelength 591 nm, full width at half maximum FWHM = 83 nm) manufactured by Electrochemical Co., Ltd. A phosphor dispersed in a silicone-based sealing material at a ratio was formed into a coating film having a thickness of 1.0 mm. A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

A red phosphor having an emission peak at a wavelength of 620 nm to 630 nm, for example, a nitride-based phosphor powder (CaAlSiN ₃ : Eu) Re-sample Y1 (peak wavelength 626 nm, full width at half maximum FWHM = 89 nm) manufactured by Electrochemical Co., Ltd. A phosphor dispersed in a silicone-based sealing material at a rate of 8 wt% was formed on a coating film having a thickness of 1.0 mm.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.
A red phosphor having an emission peak at a wavelength of 630 nm to 650 nm, for example, a nitride-based phosphor powder (CaAlSiN ₃ : Eu) Re-sample X1 (peak wavelength 646 nm, full width at half maximum FWHM = 94 nm) manufactured by Electrochemical Co., Ltd. A phosphor dispersed in a silicone-based sealing material at a rate of 8 wt% was formed on a coating film having a thickness of 1.0 mm.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

Further, a phosphor having a half-wave width of fluorescence of 100 nm or more is prepared.
α- sialon has the general formula _{Ca p Si 12- (m + n} ) Al (m + n) O n N 16-n: a phosphor represented by Eu.
A phosphor obtained by dispersing a nitride-based (α sialon) phosphor powder Re-sample Y3 (peak wavelength: 645 nm, half-value width: 112 nm) manufactured by Electrochemical Co., Ltd. in a silicone-based encapsulant at a rate of 8 wt%. It was created in a 0 mm coating film.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.
A phosphor obtained by dispersing a phosphor powder VR-103B (peak wavelength 638 nm, half width FWHM = 125 nm) manufactured by Mitsubishi Chemical Corporation (CaSiAl (ON) ₃ : Eu) in a silicone-based sealing material at a rate of 8 wt%. It was created in a coating film having a thickness of 1.0 mm. A purple LED bare chip manufactured by Mitsubishi Chemical Corporation was driven at a voltage of 3 V, and emitted excitation light (peak wavelength: 400 nm) was irradiated to measure the fluorescence spectrum intensity (relative value).

A phosphor obtained by dispersing a nitride-based (α sialon) phosphor powder OR-sample K (peak wavelength 596 nm, half-value width FWHM 134 nm) manufactured by Electrochemical Co., Ltd. in a silicone-based sealing material at a ratio of 8 wt%. It was created in a 0 mm coating film.
A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

Barium-zirconium-silicon oxide phosphor powder (Sr, Ba, Eu) ₂ SiO ₄ (peak wavelength 563 nm, full width at half maximum FWHM = 111 nm) is dispersed in a silicone-based encapsulant at a rate of 8 wt%. It created in the coating film of 1.0 mm. A B4545EC10 blue LED bare chip manufactured by GeneLite was driven at a voltage of 3 V, and the emitted excitation light (peak wavelength: 455 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

Barium-zirconium-silicon oxide phosphor powder (Ba, Eu) ZrSi ₃ O ₉ (peak wavelength 480 nm, half-value width FWHM = 48 nm) dispersed in a silicone-based encapsulant at a rate of 8 wt% has a thickness of 1 It was prepared as a 0.0 mm coating film. A purple LED bare chip manufactured by Mitsubishi Chemical Corporation was driven at a voltage of 3 V, and emitted excitation light (peak wavelength: 400 nm) was irradiated to measure the fluorescence spectrum intensity (relative value). As shown in FIG.

As the transparent body 24, it is also preferable to use glass, a thermally conductive film, a metal vapor-deposited on them, or a composite of a thermally conductive network.
A phosphor is mixed in a silicone resin at a rate of 8 wt% and kneaded while defoaming and defoaming. This is formed into a thickness of 0.5 to 3.5 mm using a roll coat. Cure at about 150 ° C. to create a coating film. Cut this to any size. Since five or six types of these phosphor films 29 are used, the cut size is determined in accordance with the size of the transparent body 24.
Since the total area of the phosphor film 29 is proportional to the fluorescence intensity, a composition ratio corresponding to a spectrum corresponding to an arbitrary black body temperature is calculated, and the planar light emitting module 10 is created with the transparent body 24 interposed therebetween.

Thickness 1 of phosphor powder BG-201B, phosphor powder YL-C190, phosphor powder BG-301B, phosphor powder (CaAlSiN ₃ : Eu) Re-sample X1, phosphor powder (Ba, Eu) ZrSi ₃ O ₉ A coating film of 0 mm is spread on a 110 mm square glass plate by repeating 6 sets of the above-mentioned five-color striped light emitting zones. The full width at half maximum FWHM of the emission spectrum of these phosphors is less than 100 nm.
Thirty rows were arranged using a metal substrate 12 of a 210 mm × 168 mm copper plate with a shielding wall pitch of 3.5 mm. And 40 blue LED bare chips of GeneLite B45545EC10 were connected in series, and the arrangement pitch was 2.5 mm. Twenty-four rows of 960 blue LED bare chips and Mitsubishi Chemical's purple LED bare chips were composed of 240 in six rows. Each LED chip was driven at 3 V and 350 mA, and the total input power to the LED chip was about 1260 W.
The heat radiation system 30 was a heat pipe and a heat radiation fin. The back surface temperature of the metal substrate 10 was 75 ° C., and the surface temperature of the heat dissipation system 30 was 60 ° C. or less. The fluorescence spectrum intensity was measured. As shown in FIG. Although there were some irregularities in the wavelength region of 480 to 600 nm, a visible light pseudo-sunlight spectrum according to a large output black body radiation spectrum which was a substantially flat continuous spectrum could be obtained.

Phosphor powder GR-240, phosphor powder BG-201B, phosphor powder YL-C190, phosphor powder BG-301B, phosphor powder (CaAlSiN3: Eu) Re-sample X1, phosphor powder (Ba, Eu) ZrSi3O9 A coating film having a thickness of 1.0 mm was carried out in the same manner as in Example 1 except that five sets of the six-color striped light-emitting zones were repeatedly spread on a 110 mm square glass plate. The full width at half maximum FWHM of the emission spectrum of these phosphors exceeds 100 nm.
Thirty rows were arranged using a metal substrate 12 of a 210 mm × 168 mm copper plate with a shielding wall pitch of 3.5 mm. In addition, 40 blue LED bare chips of GeneLite B45545EC10 were connected in series, and the arrangement pitch was 2.5 mm. Twenty-five rows of 1000 blue LED bare chips and Mitsubishi Chemical's purple LED bare chips were composed of 200 rows. Each LED chip was driven at 3 V and 350 mA, and the total input power to the LED chip was about 1260 W.
The heat radiation system 30 was a heat pipe and a heat radiation fin. The back surface temperature of the metal substrate 10 was 75 ° C., and the surface temperature of the heat dissipation system 30 was 60 ° C. or less. The fluorescence spectrum intensity was measured. As shown in FIG. A visible light pseudo-sunlight spectrum according to a large output black body radiation spectrum which is a substantially flat continuous spectrum in a wavelength region of 470 to 600 nm was obtained. FIG. 11 shows a comparison between a typical sunlight spectrum, a spectrum of a typical phosphor, and the spectrum of FIG.

Embodiment 2

[Mounting of LED bare chip]
In this embodiment, an Au thin film (not shown) having high thermal conductivity is formed on the mounting surface of the LED bare chip and the corresponding metal substrate surface, and is bonded and fixed by a chip bonder.
Shielding wall 14 (for example, thickness 1.0) partitioning in parallel strips with a pitch of 3 to 7 to 15 mm on a metal plate having high thermal conductivity (for example, a copper plate having a thickness of 1.0 to 3.5 mm and a width of 50 to 72 to 150 mm). A metal substrate 12 having a height of 3.5 mm and a height of 1.5 mm to 3.5 mm is prepared. The shielding wall 14 partitioned into parallel stripes may be a straight line or a curved shape.
For example, a copper substrate or an aluminum substrate is used as the metal plate having high thermal conductivity. More specifically, it includes at least one selected from a metal, an alloy, a semiconductor compound, and a carbon plate each having a thermal conductivity (W / m * K) in the range of 100 to 10,000. . In particular, the metal substrate is preferably at least one selected from brass, aluminum nitride, gallium nitride, aluminum, gold, silver, copper, coal, graphite, diamond, and graphene.
The LED bare chip 21 chip bonder is used for metal bonding to and fixed to the concave surface on the metal substrate 12 having the shielding walls 14 partitioned in parallel stripes. A circuit board 23 having a circuit line for supplying a voltage to the LED bare chip 21 is fixed, and wire bonding is performed between the electrode pad on the circuit board and the electrode pad on the chip by an Au wire 22.

The heat dissipation system is mainly composed of a heat pipe 34, a heat dissipation fin 32, and an internal reflection frame. FIG. 5 shows a schematic diagram.
The heat pipe 34 and the heat radiating fin 32 are connected to the surface of the metal substrate 12 opposite to the mounting of the LED bare chip 21. For example, the heat pipe 34 is obtained by performing Ni plating on Cu, and the heat radiating fin 32 is obtained by performing black alumite treatment on Al. It was used. Although the heat pipe 34 is embedded in the metal substrate 12, the heat pipe 34 may be joined to the metal substrate 12. Although the heat pipe 34 is press-fitted and joined to the radiation fins 32, other joining methods with low thermal resistance are possible. Furthermore, by connecting the mounting bracket 38 to the metal substrate 12, the mounting bracket 38 also contributes to improving heat dissipation, which is effective.

  After wire bonding, the chip mounting region is filled with silicone-based sealing resin as a sealing material so as to be in contact with the LED bare chip 21, and then cured at, for example, about 150 ° C. to form the sealing material layer 20 Form. By forming the encapsulant layer 20 so as to be substantially parallel to the surface of the LED bare chip 12, it was possible to realize an excellent light source emitting flat light. Instead of the silicone-based sealing resin, an epoxy-based resin or other resin having heat resistance and light resistance may be used.

The blue LED bare chip and / or the purple LED bare chip were mainly used from the viewpoints of obtaining high brightness, large output, easy control, easy handling, and safety and hygiene.
Thirty rows were arranged using a metal substrate 10 of 210 mm * 168 mm copper plate with a shielding wall pitch of 3.5 mm. In addition, 40 blue LED bare chips of GeneLite B45545EC10 were connected in series, and the arrangement pitch was 2.5 mm. In this case, the total number of LED chips is 1200, and the total input power to the LED chips is about 1260W.
The heat dissipation system was a heat pipe 34 and a heat dissipation fin 32. The back surface temperature of the metal substrate 10 was 75 ° C., and the surface temperature of the heat transport system 30 was 60 ° C. or less, and it was confirmed that there was no practical problem.
When the arrangement pitch of the blue LED bare chips was 1.5 mm and the number of LED chips was 1200, the back surface temperature of the metal copper substrate 10 rose to 90 ° C.
It is 100 degrees C or less, and does not cause a practical problem when used for a long time.

DESCRIPTION OF SYMBOLS 1 Black body radiation | emission spectrum type | mold LED lighting apparatus 10 Planar light emission module 12 Metal substrate 14 Shielding wall 16 Sealing frame 18 Internal reflection frame 19 Insertion opening or internal reflection frame division | segmentation fitting part 20 Layer 21 of sealing material LED bare chip 22 Au wire Wire 23 Circuit board 24 Transparent body 25 Phosphor transparent sheet 26 R phosphor 27 G phosphor 28 B phosphor 29 Phosphor film 30 Heat radiation system 32 Heat sink or heat radiation fin 34 Heat pipe 36 Metal screw 38 Mounting bracket 50 Lens system 50
52 Lens 54 Post 56 External reflection frame

Claims (8)

A metal substrate with striped shielding walls;
A plurality of LED bare chips bonded to the surface of the metal substrate;
A circuit board;
An internal reflection frame that surrounds the periphery of a plurality of LED bare chips that are wire-connected to all or part of the circuit board, and a sealing frame that adheres closely to the surface of the metal substrate;
A phosphor transparent sheet printed independently on a transparent plate or an amount of phosphor corresponding to the emission spectrum of the black body temperature by adding the fluorescence spectrum in which each of the R, G and B phosphors emits fluorescence. A phosphor transparent sheet sandwiching a film-formed phosphor film between transparent bodies, and constituting an optical system that focuses on the phosphor transparent sheet;
Bonding, intimately or adhering to the back surface of the metal substrate with a heat sink, heat pipe and / or radiating fin,
A novel, high-luminance, high-output, black body radiation having high output, characterized in that the shielding wall and / or the sealing frame and the internal reflection cylinder to which the phosphor transparent sheet is attached are brought into close contact with each other. Spectral LED lighting device. The metal substrate and the shielding wall are at least one selected from a metal, an alloy, a semiconductor compound, and a carbon plate each having a thermal conductivity (W / m * K) in the range of 100 to 10,000. The blackbody radiation spectrum type LED lighting device according to claim 1, wherein The black body radiation spectrum type LED lighting device according to claim 1, wherein the LED bare chip is a blue LED having a radiation wavelength peak of 430 to 480 nm and / or a violet LED of 380 to 420 nm. The R, G, B phosphors are phosphors having fluorescence wavelength peaks of 455 ± 5 nm, 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 541 ± 5 nm, 591 ± 5 nm, 627 ± 5 nm, and 646 ± 5 nm. The black-body radiation spectrum type LED lighting apparatus according to claim 1. As the R, G and B phosphors, the fluorescence wavelength peaks due to the excitation light (440 to 460 nm) of the blue LED bare chip are 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 543 ± 5 nm, 591 ± 5 nm, 627 ± 5 nm, The blackbody radiation spectrum type LED lighting device according to any one of claims 1 to 4, which is a phosphor having a spectrum half width (FWHM) of 30 to 100 nm at 646 ± 5 nm. As the R, G, B phosphor, an α-sialon-based, barium-zirconium-silicon oxide phosphor, and a fluorescence wavelength by a blue LED having a radiation wavelength peak of 430 to 480 nm and / or a violet LED having a wavelength of 380 to 420 nm The peaks are 455 ± 5 nm, 4850 ± 5 nm, 543 ± 5 nm, 595 ± 5 nm, 627 ± 5 nm, 646 ± 5 nm, and the peak intensity ratio is 110% or more with respect to the pseudo-white LED phosphor YAG (P46Y3), the spectrum half The blackbody radiation spectrum type LED lighting device according to any one of claims 1 to 5, which is a phosphor having a value width (FWHM) of 100 to 300 nm. The black body radiation spectrum type LED illumination according to any one of claims 1 to 6, wherein the phosphor transparent sheet is a composite with a thermally conductive mesh and / or metal-deposited. apparatus. The black body radiation spectrum type LED illumination according to any one of claims 1 to 7, further comprising a lens system mechanism capable of moving an upper surface direction of 30 to 300 mm of the phosphor transparent sheet. apparatus.

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