JP6035069B2 - Lighting device - Google Patents
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- JP6035069B2 JP6035069B2 JP2012162050A JP2012162050A JP6035069B2 JP 6035069 B2 JP6035069 B2 JP 6035069B2 JP 2012162050 A JP2012162050 A JP 2012162050A JP 2012162050 A JP2012162050 A JP 2012162050A JP 6035069 B2 JP6035069 B2 JP 6035069B2
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本発明は、ＬＥＤ照明に関する。より詳しくは、縞状の遮蔽壁を有する金属基板に複数個のＬＥＤベアチップを連結しそれらを複数配列し、遮蔽壁により区画された領域に蛍光体を充填して光源とした平面発光モジュールおよび演色性、配光性を制御できる大出力照明装置に関する。 The present invention relates to LED lighting. More specifically, a planar light emitting module and a color rendering using a light source by connecting a plurality of LED bare chips to a metal substrate having a striped shielding wall, arranging the plurality of LED bare chips, and filling a region partitioned by the shielding wall with a phosphor. The present invention relates to a high-power lighting device that can control the property and light distribution.
光源による物体の見え方、すなわち演色性は、電球、蛍光灯、水銀灯、キセノン灯などによって異なる。白色光と言われるものも色温度によっても異なる。 The appearance of the object by the light source, that is, the color rendering, varies depending on the light bulb, fluorescent lamp, mercury lamp, xenon lamp, and the like. What is called white light also depends on the color temperature.
特開２０１１−４４７４１号公報（特許文献６）に、「「蛍光体膜８は、Ｓｉ基板４で受けるような形で、前記半導体多層膜６の側面およびＳｉ基板とは反対側の主面（光取り出し面）を覆うように形成されている。蛍光体膜８は、シリコーンなどの透光性樹脂に、青色蛍光体として例えば（Ｂａ、Ｓｒ）ＭｇＡｌ１０Ｏ１７：Ｅｕ２＋や（Ｂａ、Ｓｒ、Ｃａ、Ｍｇ）１０（ＰＯ４）６Ｃｌ２：Ｅｕ２＋などから少なくとも１種類、緑色蛍光体として例えばＢａＭｇＡｌ１０Ｏ１７：Ｅｕ２＋，Ｍｎ２＋や（Ｂａ、Ｓｒ）２ＳｉＯ４：Ｅｕ２＋などから少なくとも１種類、黄色蛍光体として例えば（Ｓｒ、Ｂａ）２ＳｉＯ４：Ｅｕ２＋を少なくとも１種類、赤色蛍光体として例えばＬａ２Ｏ２Ｓ：Ｅｕ３＋やＣａＳ：Ｅｕ２＋や（Ｃａ、Ｓｒ、Ｂａ）３Ｓｉ５Ｎ８：Ｅｕ２＋などから少なくとも１種類の計４色の蛍光体粉末とＳｉＯ２などの酸化金属微粒子を分散させたものからなる。なお、透光性樹脂にはエポキシ樹脂やポリイミド樹脂を用いても構わない。蛍光体膜８は、全体に渡ってほぼ―様な厚みを有している。」（段落番号００３１）、「セラミックス基板３１６にＬＥＤチップ２を実装後、第１の樹脂としてシリコーン樹脂３２６等でＬＥＤチップ２を覆い、更に第２の樹脂としてエポキシ樹脂３２８などを用いたインジェクションモールドによりレンズ３０４を形成する。
１７個のＬＥＤチップ２は、セラミックス基板３１６上面に形成された配線パターン３３０によって、３１直列７並列に接続されている。」（段落番号０１４６〜０１４７）、「照明装置３３４において、商業電源から給電がなされると、前述したように、各ＬＥＤチップ２から白色光が発され、レンズ３０４を介して放射される。
ＬＥＤモジュール３００に対して電流を１Ａ流したときの典型的な特性として、全光束は４，０００ｌｍ、中心光度１０，０００ｃｄであった。また、その発光スペクトルは図３３に示すとおりであった。」（段落番号０１５５）、図２７、図２９、図３１、図３３」という記載がある。Japanese Unexamined Patent Publication No. 2011-44741 (Patent Document 6) states that ““ The phosphor film 8 is received by the Si substrate 4 and the side surface of the semiconductor multilayer film 6 and the main surface opposite to the Si substrate ( The phosphor film 8 is formed of, for example, (Ba, Sr) MgAl 10 O 17 : Eu 2+ or (Ba, Sr) as a blue phosphor on a translucent resin such as silicone. , Ca, Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ and the like, and green phosphors such as BaMgAl 10 O 17 : Eu 2+ , Mn 2+ and (Ba, Sr) 2 SiO 4 : Eu 2+ at least one from, for example, as a yellow phosphor (Sr, Ba) 2 SiO 4 : at least one of Eu 2+, a red phosphor as for example La 2 O 2 S: Eu 3+ and CaS Eu 2+ and (Ca, Sr, Ba) 3 Si 5 N 8:. Made from those etc. Eu 2+ is dispersed at least one four-color phosphor powder and metal oxide fine particles such as SiO 2 of yet, Toru An epoxy resin or a polyimide resin may be used as the light-sensitive resin, and the phosphor film 8 has a substantially uniform thickness throughout the entire body ”(paragraph number 0031),“ on the ceramic substrate 316. After the LED chip 2 is mounted, the LED chip 2 is covered with a silicone resin 326 or the like as a first resin, and a lens 304 is formed by injection molding using an epoxy resin 328 or the like as a second resin.
The 17 LED chips 2 are connected in 31 series and 7 in parallel by a wiring pattern 330 formed on the upper surface of the ceramic substrate 316. (Paragraph Nos. 0146 to 0147), “When lighting device 334 is powered from a commercial power supply, white light is emitted from each LED chip 2 and emitted through lens 304 as described above.
As typical characteristics when a current of 1 A was passed through the LED module 300, the total luminous flux was 4,000 lm and the central luminous intensity was 10,000 cd. The emission spectrum was as shown in FIG. "(Paragraph number 0155), FIG. 27, FIG. 29, FIG. 31, FIG. 33".
特表２００３−５３５４７７号公報（特許文献７）に、「「本発明では、ＢＧＧ混合、つまり青色、黄色および緑色の組み合わせに基づく全く新しいコンセプトが初めて利用される。この場合重要であるのは、黄色の蛍光体がワイドバンドであって、十分な発光の成分を赤色のスペクトル領域にも有している、特にこの発光体の全発光の少なくとも２０％の成分を６２０ｎｍ以上のスペクトル領域の可視領域に有しているということである。」（０００７）、「白色ＬＥＤのさらに別の有利な実施例では、ＩｎＧａＮチップ（４５０ｎｍで青色発光）に加えて、上記のクロロシリケート蛍光体（ＣＳ：Ｅｕ）のＹＡＧ：Ｃｅとの組み合わせが用いられる。この実施例は、両蛍光体の温度消光挙動が極めて等しいことを特徴としており、このことは、図６において明らかである。両蛍光体の温度消光挙動は、信頼性の高い使用領域（約１００℃まで）にわたって実際的には同様であり、温度にはほんのわずかにしか依存しない。たとえば、ここで測定された混合ガーネット（Ｙ０．３３Ｇｄ０．６３Ｃｅ０．０４）Ａｌ５Ｏ１２のような他のガーネットでは、温度恒常性が著しく劣っている（図６にこの混合ガーネットを（Ｙ，Ｇｄ）ＡＧ：Ｃｅで表す）。これにより、種々様々な温度条件の下での、色度座標および別の光工学的なデータの特別な恒常性が、この実施例において保証され、この実施例は、ＳＥとしてＹ（またはＴｂも）を多量に含有している（ＳＥ格子サイトの少なくとも６０モル％）。この実施例の発光スペクトルを、図７に示す。これは、８０００Ｋの色温度および色度座標ｘ＝０．２９４およびｙ＝０．３０９に対応している。また、色再現は、Ｒａ＝７７である。両蛍光体の混合比は、４．６：１である。」」」という記載がある。In Japanese translation of PCT publication No. 2003-535477 (patent document 7), ““ In the present invention, a completely new concept based on BGG mixing, that is, a combination of blue, yellow and green, is used for the first time. The yellow phosphor has a wide band and has a sufficient emission component in the red spectral region, in particular at least 20% of the total emission of this phosphor has a visible region in the spectral region of 620 nm or more. (0007), “In yet another advantageous embodiment of a white LED, in addition to an InGaN chip (blue emission at 450 nm), the above chlorosilicate phosphor (CS: Eu). ) Is used in combination with YAG: Ce, which is characterized in that the temperature quenching behavior of both phosphors is very equal. Is evident in Figure 6. The temperature quenching behavior of both phosphors is practically similar over a reliable use area (up to about 100 ° C) and depends only slightly on temperature. Other garnets such as the mixed garnet (Y 0.33 Gd 0.63 Ce 0.04 ) Al 5 O 12 measured here have significantly poor temperature constancy (see FIG. 6 for this mixed garnet). (Represented by (Y, Gd) AG: Ce), which ensures a special constancy of chromaticity coordinates and other optoelectronic data in this example under a wide variety of temperature conditions, This example contains a large amount of Y (or Tb) as SE (at least 60 mol% of the SE lattice sites) The emission spectrum of this example is shown in Figure 7. This is a color of 8000K. Corresponding to the degree and chromaticity coordinates x = 0.294 and y = 0.309, the color reproduction is Ra = 77 The mixing ratio of both phosphors is 4.6: 1. """.
特願２０１１−１７４３６１（特許文献１０）に、「「複数の大出力発光素子を金属基板・封止枠、等に接合する光源とレンズ系とで構成とし、ヒートシンク、ヒートパイプや放熱フィンを介して排熱されることで、発光素子を高密度に集積しても、蓄熱が抑制され、効率よく、持続的に発光することができ、また、封止材に蛍光体を分散することで蛍光体の粒子が光源となり、あたかも封止枠内が単一光源のように作用することで、平面発光単一型光源とみなし、これを点光源とするレンズ系による配光性を制御することにより、高い伝熱性と熱輸送及び平面発光の光源を配光制御するという作用機構によって、照度むらのない、近距離、遠距離の配光性を制御した、高輝度、大出力の新規なＬＥＤ照明装置を実現したものである。」（段落番号００９３）」という記載がある。 Japanese Patent Application No. 2011-174361 (Patent Document 10) states that "" a plurality of light-emitting elements are composed of a light source and a lens system that are bonded to a metal substrate, a sealing frame, etc., and a heat sink, a heat pipe, and a heat radiating fin are used. Even if the light-emitting elements are accumulated at high density, heat storage is suppressed and light can be emitted efficiently and continuously. Also, the phosphor can be dispersed by dispersing the phosphor in the sealing material. By controlling the light distribution by the lens system using this as a point light source, the particles of A new LED lighting device with high brightness and high output that controls light distribution at short distance and long distance without unevenness of illuminance by an action mechanism that controls light distribution of a light source with high heat transfer, heat transport, and planar light emission. Is realized " There is a description that the number 0093) ".
しかしながら、大出力、高輝度を達成するためには多数のＬＥＤを用いて、高負荷を懸ける必要がある。高負荷ＬＥＤは駆動により発熱し、高温になると放射強度が低下する。ＬＥＤランプをアレイすると照明ムラが生じる。多数のＬＥＤベアチップを集積アレイすると急激に昇温するので、放射強度が急激に低下し、動作不良することにも繋がる。 However, in order to achieve high output and high luminance, it is necessary to use a large number of LEDs and to apply a high load. The high-load LED generates heat when driven, and the radiation intensity decreases when the temperature becomes high. When LED lamps are arrayed, illumination unevenness occurs. When a large number of LED bare chips are integrated and arrayed, the temperature rapidly rises, so that the radiation intensity decreases rapidly, leading to malfunction.
また、擬似太陽光のような連続スペクトルを得ると同時に、必要に応じて任意の可視光を放射できる照明装置にすることが求められる。
本発明は、高輝度、大出力の平面発光単一型の光源であり、それを用いて近距離、遠距離に到達する配光性を制御できると共に演色性をも制御できる高輝度、大出力、平面発光の黒体放射スペクトル型ＬＥＤ照明装置を提供しようとするものである。Moreover, it is calculated | required to set it as the illuminating device which can radiate | emit arbitrary visible light as needed while obtaining a continuous spectrum like pseudo-sunlight.
The present invention is a single light source with a high luminance and a high output, which emits a single light source. A high luminance and a high output which can control the color distribution by controlling the light distribution reaching a short distance and a long distance. An object of the present invention is to provide a flat-light-emitting black body radiation spectrum type LED lighting device.
本願発明者は、鋭意研究の結果、ＬＥＤベアチップの昇温を抑制し、個々の発光領域を区画するための、縞状の、法面を有する遮蔽壁を備えた、熱伝導性の高い金属等の基板に複数のＬＥＤベアチップを直接に接合し、接着して集積することにより、ＬＥＤベアチップからの発熱を金属等の基板及び遮蔽壁に伝熱し、金属等の基板とヒートシンク、ヒートパイプや放熱フィンを接合し、大量の熱輸送と排熱を行うとともに、縞状の遮蔽壁の法面及びＬＥＤベアチップを集積した凹部に、Ｒ、Ｇ、Ｂの蛍光を発光するそれぞれ単独の蛍光体を算出した体積量を塗布し、これを点光源とするレンズ系によって配光性を制御することにより発明を完成し、上記課題を解決した。すなわち、 As a result of earnest research, the inventor of the present application suppresses the temperature rise of the LED bare chip and has a highly heat conductive metal with a striped, sloped shielding wall for partitioning each light emitting region. A plurality of LED bare chips are directly joined to and bonded to each other substrate, and the heat generated from the LED bare chips is transferred to a substrate such as a metal and a shielding wall. In addition, a large amount of heat transport and exhaust heat were performed, and each phosphor that emits R, G, and B fluorescence was calculated on the slope of the striped shielding wall and the concave portion where the LED bare chip was integrated. The invention was completed by applying a volume amount and controlling the light distribution by a lens system using this as a point light source, thereby solving the above-mentioned problems. That is,
本願発明者は、Ｒ、Ｇ、Ｂの蛍光体を必要とする波長域から算出した蛍光体を遮蔽壁に囲まれた領域に塗布し、配列したＬＥＤベアチップに印加する電圧制御またはＬＥＤベアチップに流れる電流制御により演色性にも対応した、照度むらのない、近距離、遠距離の配光性を制御した、高輝度、大出力の新規な平面発光の黒体放射スペクトル型ＬＥＤ照明装置を実現したものである。 The inventor of the present application applies phosphors calculated from wavelength ranges requiring R, G, and B phosphors to a region surrounded by a shielding wall, and applies voltage control to the arranged LED bare chips or flows to the LED bare chips. We realized a new high-intensity, high-output, black-body-emission-spectrum LED illuminator that controls the light distribution at short distances and long distances, with no uneven illuminance, and also supports color rendering by current control. Is.
本発明の照明装置は、縞状の法面を有する遮蔽壁を備えた金属基板と、前記金属基板の凹部表面に接合される複数の配列したＬＥＤベアチップと、配列毎にＬＥＤベアチップを駆動制御できる回路基板と、前記金属基板の表面上に密着する封止枠であると共に前記回路基板の全部又は一部と配線接続された複数の発光素子との周囲を囲む封止枠と、前記封止枠内部において、前記発光素子と接触しつつ前記発光素子を封止する封止材とを備え、Ｒ、Ｇ、Ｂ蛍光体のそれぞれが蛍光を発する蛍光スペクトルを加算して黒体温度の放射スペクトルに見合う量の蛍光体をそれぞれ独立に遮蔽壁の法面及びＬＥＤベアチップを集積した凹部に塗布し、封止剤を充填した平面発光モジュールと、前記平面発光モジュールを焦点とする光学系を構成する、前記金属基板の裏面および前記遮壁をヒートシンク、ヒートパイプ及び／又は放熱フィンと接合、密接又は接着させることを特徴とする高輝度、大出力の新規な平面発光の黒体放射スペクトル型ＬＥＤ照明装置である。 The illumination device of the present invention can drive and control a metal substrate having a shielding wall having a striped slope, a plurality of arrayed LED bare chips joined to the concave surface of the metal substrate, and the LED bare chips for each array. A sealing frame that is in close contact with the surface of the circuit board and the surface of the metal substrate, and encloses a periphery of a plurality of light emitting elements connected to all or a part of the circuit board, and the sealing frame Inside, a sealing material that seals the light emitting element while being in contact with the light emitting element is provided, and a fluorescence spectrum in which each of the R, G, and B phosphors emits fluorescence is added to obtain a radiation spectrum at a black body temperature. Appropriate amounts of phosphors are independently applied to the slope of the shielding wall and the concave portion where the LED bare chip is integrated, and a planar light emitting module filled with a sealing agent and an optical system focusing on the planar light emitting module are configured. A novel high-luminance, high-output, black-body-emission-spectrum-type LED illuminating device characterized in that the back surface of the metal substrate and the shielding wall are joined, closely or adhered to a heat sink, heat pipe and / or heat radiating fin. It is.
本発明の照明装置は、前記金属基板、遮蔽壁が、熱伝導率（Ｗ／ｍ＊Ｋ）が１００〜１０，００の範囲である金属、合金、半導体化合物、炭素のそれぞれを板状にしたものから選ばれた少なくとも一つのものを含む。とくに、前記金属基板が、真鍮、窒化アルミニウム、ガリウムナイトライド、アルミニウム、金、銀、銅、石炭、グラアァイト、ダイヤモンド、グラフィンから選ばれた少なくとも一つのものが好ましい。
また、前記遮蔽壁の内部が中空構造であり、ヒートポンプの機能を有するものである。In the illuminating device of the present invention, the metal substrate and the shielding wall have a plate shape of each of a metal, an alloy, a semiconductor compound, and carbon each having a thermal conductivity (W / m * K) in the range of 100 to 10,000. Includes at least one selected from those. In particular, the metal substrate is preferably at least one selected from brass, aluminum nitride, gallium nitride, aluminum, gold, silver, copper, coal, graphite, diamond, and graphene.
Moreover, the inside of the said shielding wall is a hollow structure, and has a function of a heat pump.
前記ＬＥＤベアチップが、放射波長ピークが４３０〜４８０ｎｍの青色ＬＥＤ及び／又は３８０〜４２０ｎｍの紫色ＬＥＤであるものが好ましい。 The LED bare chip is preferably a blue LED having a radiation wavelength peak of 430 to 480 nm and / or a purple LED having a wavelength of 380 to 420 nm.
本発明の照明装置は、
前記Ｒ、Ｇ、Ｂ蛍光体として、蛍光波長ピークが４５５±５ｎｍ、４８０±５ｎｍ、５１８±５ｎｍ、５２８±５ｎｍ、５４１±５ｎｍ、５９１±５ｎｍ、６２７±５ｎｍ、６４６±５ｎｍの蛍光体であるものも黒体放射スペクトル型ＬＥＤ照明装置に含まれる。The lighting device of the present invention is
The R, G, B phosphors are phosphors having fluorescence wavelength peaks of 455 ± 5 nm, 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 541 ± 5 nm, 591 ± 5 nm, 627 ± 5 nm, and 646 ± 5 nm. Those are also included in the black body radiation spectrum type LED lighting device.
本発明の照明装置は、
前記Ｒ、Ｇ、Ｂ蛍光体として、青色ＬＥＤベアチップの励起光（４４０〜４６０ｎｍ）による蛍光波長ピークが４８０±５ｎｍ、５１８±５ｎｍ、５２８±５ｎｍ、５４３±５ｎｍ、５９１±５ｎｍ、６２７±５ｎｍ、６４６±５ｎｍであって、スペクトル半値幅（ＦＷＨＭ）３０〜１００ｎｍの蛍光体であるものも黒体放射スペクトル型ＬＥＤ照明装置に含まれる。The lighting device of the present invention is
As the R, G, B phosphors, the fluorescence wavelength peaks due to the excitation light (440 to 460 nm) of the blue LED bare chip are 480 ± 5 nm, 518 ± 5 nm, 528 ± 5 nm, 543 ± 5 nm, 591 ± 5 nm, 627 ± 5 nm, A black body radiation spectrum type LED illumination device is also a phosphor having a spectrum half width (FWHM) of 30 to 100 nm of 646 ± 5 nm.
本発明の照明装置は、
前記Ｒ、Ｇ、Ｂ蛍光体として、ナイトライド系、バリウムージルコニウムーシリコン酸化物蛍光体であって、放射波長ピークが４３０〜４８０ｎｍの青色ＬＥＤ及び／又は３８０〜４２０ｎｍの紫色ＬＥＤによる蛍光波長ピークが４５５±５ｎｍ、４８５０±５ｎｍ、５４３±５ｎｍ、５９５±５ｎｍ、６２７±５ｎｍ、６４６±５ｎｍであって、擬白色ＬＥＤ蛍光体ＹＡＧ（Ｐ４６Ｙ３）に対してピーク強度比が１１０％以上、スペクトル半値幅（ＦＷＨＭ）１００〜３００ｎｍの蛍光体であることを特徴とする黒体放射スペクトル型ＬＥＤ照明装置でもある。The lighting device of the present invention is
The R, G and B phosphors are nitride-based, barium-zirconium-silicon oxide phosphors, and the emission wavelength peak is a fluorescence wavelength peak due to a blue LED having a wavelength of 430 to 480 nm and / or a purple LED having a wavelength of 380 to 420 nm. Are 455 ± 5 nm, 4850 ± 5 nm, 543 ± 5 nm, 595 ± 5 nm, 627 ± 5 nm, 646 ± 5 nm, and the peak intensity ratio is 110% or more with respect to the pseudo-white LED phosphor YAG (P46Y3). It is also a black body radiation spectrum type LED lighting device characterized by being a phosphor having a value range (FWHM) of 100 to 300 nm.
本発明の照明装置は、
前記封止材の上層に積層される熱伝導性フィルムを更に備え、前記発光素子の発する光を平面単一発光として行なうものである。
更に前記熱伝導性フィルムが、熱伝導性のある網目状のものとの複合したもの及び／又は金属蒸着したものも含まれる。The lighting device of the present invention is
A heat conductive film laminated on an upper layer of the sealing material is further provided, and light emitted from the light emitting element is performed as single plane light emission.
Further, the heat conductive film includes a composite with a heat conductive network and / or a metal deposited film.
本発明の照明装置は、
前記封止材又はその上層に積層される熱伝導性フィルムの上面方向３０〜３００ｍｍを移動させることができるレンズ系機構を更に備えていることを特徴とする黒体放射スペクトル型ＬＥＤ照明装置でもある。The lighting device of the present invention is
It is also a black body radiation spectrum type LED lighting device further comprising a lens system mechanism capable of moving an upper surface direction of 30 to 300 mm of the sealing material or a heat conductive film laminated thereon. .
本発明の照明装置は、複数のＬＥＤベアチップを熱伝導性の高い金属等の基板に直接に接合、接着することにより、ＬＥＤベアチップからの放熱を金属等の基板及び封止枠に伝熱し、ヒートシンク、ヒートパイプや放熱フィンを介して排熱されることで、発光素子を高密度に集積・アレイすることができるので、小型照明機器はもとより、スタジアム用の投光装置等、ロケーション用スポットライト等、体育館等の大空間用の大型で、大出力で、高輝度の照明装置とすることができる。 The illuminating device of the present invention directly heats heat from the LED bare chip to a substrate such as a metal and a sealing frame by directly bonding and adhering a plurality of LED bare chips to a substrate such as a metal having high thermal conductivity. By exhausting heat through heat pipes and radiating fins, light emitting elements can be integrated and arrayed with high density, so that not only small lighting equipment, but also stadium floodlights, location spotlights, etc. A large-sized, large-output, high-luminance lighting device for a large space such as a gymnasium can be provided.
また、縞状の法面を有する遮蔽壁を備えたことでＬＥＤベアチップ集積部の温度上昇が抑制されるので、温度上昇による照度低下を抑制できる。
蛍光体の発光に伴う熱の発生も遮蔽壁及び封止枠によって伝導されて温度上昇が抑制されるので、発光効率の低下が抑えられる。
また、前記遮蔽壁の内部が中空であり、中空部に熱媒体を循環させることで、ヒートポンプの機能を有するものであるから、ＬＥＤベアチップ集積部の排熱がより向上し、大出力の照明装置を具現できる。Moreover, since the temperature rise of the LED bare chip integrated part is suppressed by providing the shielding wall having the striped slope, the illuminance reduction due to the temperature rise can be suppressed.
The generation of heat associated with the light emission of the phosphor is also conducted by the shielding wall and the sealing frame and the temperature rise is suppressed, so that the decrease in light emission efficiency can be suppressed.
In addition, since the inside of the shielding wall is hollow and has a heat pump function by circulating a heat medium in the hollow portion, the exhaust heat of the LED bare chip integrated portion is further improved, and a high-output lighting device Can be implemented.
ＬＥＤベアチップを高密度に集積することができること、蛍光体層中の蛍光体の粒子が光源となり、あたかも封止枠内が単一光源のように作用することにより、あたかも封止枠内が単一に平面発光した光源となり、照度ムラが殆ど生じないため、目が疲れない均一な照明を実現できる。
また、平面発光単一型光源とみなせることで、モザイク状に分布した複数のＲＧＢスペクトルが混光され、黒体温度の放射スペクトルに見合う光源ができる。ＲＧＢ蛍光体の量を変えることにより、また、配列毎にＬＥＤベアチップを駆動制御できる回路基板を有するので配列単位で放射輝度を制御することで、必要とする演色性を得ることが可能であり、また各々の発光領域の放射強度を個別に制御（時間的な制御も含む）することにより、任意の発光色を得ることが可能である。The LED bare chip can be integrated with high density, the phosphor particles in the phosphor layer serve as the light source, and the inside of the sealing frame acts like a single light source, so that the inside of the sealing frame is single. Therefore, it is possible to realize uniform illumination without eye fatigue.
Further, by considering it as a flat light emitting single-type light source, a plurality of RGB spectra distributed in a mosaic shape are mixed, and a light source suitable for the radiation spectrum of black body temperature can be obtained. By changing the amount of RGB phosphor, and having a circuit board that can drive and control the LED bare chip for each arrangement, it is possible to obtain the required color rendering by controlling the radiance in units of arrangement, Moreover, it is possible to obtain an arbitrary emission color by individually controlling the radiation intensity of each light emitting region (including temporal control).
黒体温度６０００Ｋの放射スペクトルが得られるので、オゾン、水（ミストなど）によるフィルターを付設することで、擬似太陽光を実現することができ、太陽光発電のテスト照明装置として利用できる。
さらに、平面発光単一型光源とみなし、これを点光源とするレンズ系による配光性を制御することにより、近距離、遠距離の照度分布を制御できるので、大空間作業場の照明灯、自動車道路の照明灯や街灯などに使用することができる。Since a radiation spectrum with a black body temperature of 6000 K is obtained, artificial sunlight can be realized by attaching a filter with ozone and water (mist, etc.), and it can be used as a test lighting device for solar power generation.
Furthermore, it is possible to control the illuminance distribution at short distance and far distance by controlling the light distribution by a lens system that uses this as a point light source, considering it as a flat light emitting single light source. It can be used for road lights and street lights.
本発明の照明装置に関する実施するための形態について記載する。
以下、ベアチップ状態の発光素子をＬＥＤベアチップといい、一般に市販されている封止材で封止されている発光素子をＬＥＤ素子という。The form for implementing regarding the illuminating device of this invention is described.
Hereinafter, a light emitting element in a bare chip state is referred to as an LED bare chip, and a light emitting element that is generally sealed with a commercially available sealing material is referred to as an LED element.
本発明の照明装置光源部の基本構成を図１に示す。
ＬＥＤベアチップ１２と実装基板１０と、封止枠１９と、遮蔽壁２２と、各種蛍光体４２，４４，４８，５０等、封止材の層２０から構成されている。実装基板１０上に、ＬＥＤベアチップ１２を複数個直接接合する。実装基板１０は熱伝導率の高い材料が好ましく、例えば銅基板やアルミニウムの金属基板や窒化ケイ素あるいは窒化アルミニウムのセラミクス基板を用いる。FIG. 1 shows a basic configuration of the light source unit of the illumination device according to the present invention.
The LED bare chip 12, the mounting substrate 10, the sealing frame 19, the shielding wall 22, and various phosphors 42, 44, 48, 50, and the like are included in the sealing material layer 20. A plurality of LED bare chips 12 are directly bonded on the mounting substrate 10. The mounting substrate 10 is preferably made of a material having high thermal conductivity. For example, a copper substrate, an aluminum metal substrate, or a silicon nitride or aluminum nitride ceramic substrate is used.
実装基板１０が金属基板の場合、ＬＥＤベアチップの金属基板への実装は、例えばシリコーン系のダイボンド樹脂１４を用いる。金属基板１０上のチップ実装領域外には、ＬＥＤベアチップ１２に電圧を供給するための回路線を有する回路基板（図示せず）を固定し、回路基板上の電極パッドおよびチップ上の電極パッド間をＡｕワイヤ線（図示せず）によりワイヤボンディングを行う。あるいは実装基板１０が配線パターンを有するセラミクス基板の場合には、実装基板１０上のＡｕパッドにＬＥＤベアチップをフリップチップ実装しても良い。 When the mounting substrate 10 is a metal substrate, for example, a silicone die bond resin 14 is used to mount the LED bare chip on the metal substrate. A circuit board (not shown) having a circuit line for supplying a voltage to the LED bare chip 12 is fixed outside the chip mounting area on the metal substrate 10, and between the electrode pads on the circuit board and the electrode pads on the chip. Wire bonding is performed using an Au wire wire (not shown). Alternatively, when the mounting substrate 10 is a ceramic substrate having a wiring pattern, an LED bare chip may be flip-chip mounted on an Au pad on the mounting substrate 10.
ワイヤボンディング後チップ実装領域にシリコーン系封止樹脂に蛍光体を添加した封止材を用いて、ＬＥＤベアチップ１２と接触しつつ、覆うように充填し、この後、例えば１５０℃程度でキュアさせて蛍光体を分散させた封止材の層２０を形成する。封止材の層２０はＬＥＤベアチップ１２の表面と略平行になるように形成する。
ＬＥＤベアチップを熱伝導性の高い基板上に直接実装する図１の構造においては、ＬＥＤベアチップからの発熱を効率良く熱拡散できるため、複数のＬＥＤベアチップを高密度で実装することが可能である。また実装したＬＥＤベアチップ全体を蛍光体粉末を分散させたシリコーン系封止樹脂で被覆することにより、ＬＥＤベアチップからの発光およびＬＥＤベアチップからの発光により励起された蛍光体からの発光が、封止層内で拡散することにより、大光量で高均一な拡散光を実現することが可能である。本発明はかかる基本構成において、本発明による新規の構造により、太陽光と近似した概ね３５０ｎｍから７００ｎｍの連続スペクトルを提供するものである。以下、本発明による実施の形態を説明する。After wire bonding, the chip mounting area is filled with a sealing material obtained by adding a phosphor to a silicone-based sealing resin while being in contact with the LED bare chip 12, and then cured at, for example, about 150 ° C. The sealing material layer 20 in which the phosphor is dispersed is formed. The sealing material layer 20 is formed so as to be substantially parallel to the surface of the LED bare chip 12.
In the structure of FIG. 1 in which LED bare chips are directly mounted on a substrate having high thermal conductivity, heat from the LED bare chips can be efficiently diffused, and therefore, a plurality of LED bare chips can be mounted at high density. In addition, by covering the entire mounted LED bare chip with a silicone-based sealing resin in which phosphor powder is dispersed, light emission from the LED bare chip and light emission from the phosphor excited by light emission from the LED bare chip can be obtained by the sealing layer. By diffusing inside, it is possible to realize a highly uniform diffused light with a large amount of light. In this basic configuration, the present invention provides a continuous spectrum of approximately 350 nm to 700 nm approximated to that of sunlight by the novel structure according to the present invention. Embodiments according to the present invention will be described below.
本発明の照明装置光源部の実施の形態１について図１および図２を用いて説明する。実装基板１０上に形成された光源全体が、遮蔽壁２２により区切られた複数の異なる発光波長帯域を有する発光領域から構成され、少なくとも二種類以上の異なる発光波長を有する発光領域から構成される。図１においては、２３，２４，２６，２８の四発光領域から形成される例であり，図２においては、２３、２４、２５、２６、２７、２８、２９の七発光領域から形成される例であり、発光領域はストライプ状に配列されるが、発光領域を例えば格子状に構成することも可能である。 Embodiment 1 of the lighting device light source unit of the present invention will be described with reference to FIGS. The entire light source formed on the mounting substrate 10 is composed of light emitting regions having a plurality of different light emission wavelength bands partitioned by the shielding wall 22, and is composed of light emitting regions having at least two types of different light emission wavelengths. In FIG. 1, it is an example formed from four light emitting regions 23, 24, 26 and 28, and in FIG. 2, it is formed from seven light emitting regions 23, 24, 25, 26, 27, 28 and 29. For example, the light emitting regions are arranged in a stripe shape, but the light emitting regions may be configured in a lattice shape, for example.
図３は、実施の形態１を示す光源部平面図２の断面図である。図３において、遮蔽壁２２は傾斜角を有しており、実装基板１０と一体化している。例えば、銅をプレス加工した波型シート状としているが、図４に示した形状とすることも可能である（図４では単一の発光領域を示す）。本発明によれば、異なる発光波長を有する発光領域２４、２６、２８の各々の発光領域が、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２と、青色ＬＥＤベアチップ１２からの発光により励起される蛍光体層とから成ることを特徴としている。 FIG. 3 is a cross-sectional view of the plan view 2 of the light source unit showing the first embodiment. In FIG. 3, the shielding wall 22 has an inclination angle and is integrated with the mounting substrate 10. For example, the corrugated sheet is formed by pressing copper, but the shape shown in FIG. 4 may be used (a single light emitting region is shown in FIG. 4). According to the present invention, each of the light emitting regions 24, 26, and 28 having different emission wavelengths is excited by the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm and the light emission from the blue LED bare chip 12. It is characterized by comprising a phosphor layer.
蛍光体層の構造に関し、図３の第一の発光領域２４を用いて説明する。少なくとも遮蔽壁２２の傾斜側面および遮蔽壁２２に囲まれた青色ＬＥＤベアチップ実装面上に、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２からの発光により励起される、第一の蛍光体層３０を塗布形成した。第一の蛍光体粉末を分散させたシリコーン系封止材を遮蔽壁２２で囲まれた発光領域全体に塗布し、１５０℃程度でキュアして第一の蛍光体層３０を形成した。 The structure of the phosphor layer will be described using the first light emitting region 24 in FIG. The first phosphor layer excited by light emitted from the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm on at least the inclined side surface of the shielding wall 22 and the blue LED bare chip mounting surface surrounded by the shielding wall 22. 30 was formed by coating. The first phosphor layer 30 was formed by applying a silicone sealing material in which the first phosphor powder was dispersed to the entire light emitting region surrounded by the shielding wall 22 and curing at about 150 ° C.
第一の発光領域２４は、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２として、ＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を使用し、５１０ｎｍから５２０ｎｍに発光のピークを有する緑色蛍光体、例えば、三菱化学（株）製ＣａＳｃ２Ｏ４：Ｃｅ蛍光体粉末をシリコーン系封止材に分散させた第一の蛍光体層３０とから構成した。第一の発光領域２４からの発光スペクトル強度（相対値）を図５に示す。測定はコニカミノルタ製色彩輝度計ＣＳ−２００を使用し、データ処理として色彩管理ソフトウェアＣＳ−Ｓ１０Ｗを使用した。以下発光スペクトル強度（相対値）測定は同様である。 The first light emitting region 24 uses B4545ECI0 manufactured by GeneLite as the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm, and a green phosphor having a light emission peak at 510 nm to 520 nm, for example, Mitsubishi Chemical Corporation ) CaSc2O4: Ce phosphor powder prepared from a first phosphor layer 30 dispersed in a silicone-based sealing material. The emission spectrum intensity (relative value) from the first emission region 24 is shown in FIG. For the measurement, a color luminance meter CS-200 manufactured by Konica Minolta was used, and color management software CS-S10W was used for data processing. Hereinafter, the emission spectrum intensity (relative value) measurement is the same.
第二の発光領域２６は、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２として、ＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を使用し、５３５ｎｍ〜５５０ｎｍに発光のピークを有する緑蛍光体、例えば、電気化学（株）製のナイトライド系（βサイアロン）蛍光体粉末をシリコーン系封止材に分散させた第二の蛍光体層３４とから構成した。第二の発光領域２６からの発光スペクトル強度（相対値）を図６に示す。 The second light emitting region 26 uses a B4545ECI0 manufactured by GeneLite as the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm, and a green phosphor having a light emission peak at 535 nm to 550 nm, for example, Electrochemical Co., Ltd. And a second phosphor layer 34 in which a nitride-based (β sialon) phosphor powder is dispersed in a silicone-based sealing material. The emission spectrum intensity (relative value) from the second light emitting region 26 is shown in FIG.
第三の発光領域２８は、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２として、ＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を使用し、５９０ｎｍから６００ｎｍに発光のピークを有する黄色蛍光体、例えば、電気化学（株）製ナイトライド系（αサイアロン）蛍光体粉末をシリコーン系封止材に分散させた第五の蛍光体層３８とから構成した。第三の発光領域２８からの発光スペクトル強度（相対値）を図７に示す。 The third light emitting region 28 uses a B4545ECI0 manufactured by GeneLite as the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm, and a yellow phosphor having a light emission peak at 590 nm to 600 nm, for example, Electrochemical Co., Ltd. ) Nitride-based (α sialon) phosphor powder made from a fifth phosphor layer 38 dispersed in a silicone-based sealing material. The emission spectrum intensity (relative value) from the third light emitting region 28 is shown in FIG.
第四の発光領域２３は、４４０ｎｍ〜４７０ｎｍに発光のピークを有する青色ＬＥＤベアチップ１２として、ＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を使用し、６４０ｎｍ〜６５０ｎｍに発光のピークを有する赤色蛍光体、例えば、電気化学（株）製ナイトライド系蛍光体粉末（ＣａＡｌＳｉＮ３：Ｅｕ）をシリコーン系封止材に分散させた第六の蛍光体層とから構成した。第四の発光領域２３からの発光スペクトル強度（相対値）を図８に示す。The fourth light emitting region 23 uses B4545ECI0 manufactured by GeneLite as the blue LED bare chip 12 having a light emission peak at 440 nm to 470 nm, and a red phosphor having a light emission peak at 640 nm to 650 nm, for example, electrochemical (stock ) Made of a nitride phosphor powder (CaAlSiN 3 : Eu) dispersed in a silicone-based sealing material. The emission spectrum intensity (relative value) from the fourth emission region 23 is shown in FIG.
第五の発光領域２５は、６２０ｎｍ〜６３０ｎｍに発光のピークを有する赤色蛍光体、例えば、電気化学（株）製ナイトライド系蛍光体粉末（ＣａＡｌＳｉＮ３：Ｅｕ）をシリコーン系封止材に分散させて、青色ＬＥＤベアチップ、例えばＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を覆うように充填した。The fifth light emitting region 25 includes a red phosphor having a light emission peak at 620 nm to 630 nm, for example, a nitride phosphor powder (CaAlSiN 3 : Eu) manufactured by Electrochemical Co., Ltd. dispersed in a silicone encapsulant. Then, it was filled so as to cover a blue LED bare chip, for example, B4545ECI0 manufactured by GeneLite.
第六の発光領域２７は、５２０ｎｍ〜５３０ｎｍに発光のピークを有する緑色蛍光体、例えば、三菱化学（株）製（ＢａＳｒ）２ＳｉＯ４：Ｅｕ蛍光体粉末をシリコーン系封止材に分散させて、青色ＬＥＤベアチップ、例えばＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を覆うように充填した。The sixth light emitting region 27 is obtained by dispersing a green phosphor having an emission peak at 520 nm to 530 nm, for example, Mitsubishi Chemical Corporation (BaSr) 2 SiO 4 : Eu phosphor powder in a silicone-based sealing material. A blue LED bare chip, for example, B4545ECI0 manufactured by GeneLite, was filled so as to cover it.
第七の発光領域２９は、４７０ｎｍから５００ｎｍに発光のピークを有する青緑色蛍光体、例えば、バリウムージルコニウムーシリコン酸化物蛍光体粉末（Ｂａ，Ｅｕ）ＺｒＳｉ３Ｏ９（ピーク波長４８０ｎｍ）をシリコーン系封止材に分散させて、紫色ＬＥＤベアチップ、例えば三菱化学社製の紫色ＬＥＤベアチップＸＣＧ−７００−Ｄを覆うように充填した。 The seventh light emitting region 29 is a silicone-based sealing of a blue-green phosphor having a light emission peak from 470 nm to 500 nm, for example, barium-zirconium-silicon oxide phosphor powder (Ba, Eu) ZrSi3O9 (peak wavelength 480 nm). It was made to disperse | distribute to material and it filled so that the purple LED bare chip, for example, the purple LED bare chip XCG-700-D by Mitsubishi Chemical Corporation might be covered.
複数の発光スペクトルの異なる蛍光体粉末をシリコーン系封止材に混合分散させて、青色ＬＥＤベアチップを覆う従来の構成とは異なり、各々の蛍光体層は単一の蛍光体粉末で構成されるため、青色発光から他可視光への変換効率を高めると共に擬似太陽光光源として格別の効果を奏する。
また、照明の使用目的に適合するように、発光領域を設定することが可能であり、これらの七つの発光領域を組み合わせることにより、必要とする任意の可視光線を得ることができる。Unlike the conventional configuration in which a plurality of phosphor powders having different emission spectra are mixed and dispersed in a silicone-based sealing material to cover the blue LED bare chip, each phosphor layer is composed of a single phosphor powder. In addition, the conversion efficiency from blue light emission to other visible light is increased, and the pseudo-sunlight source has a special effect.
Moreover, it is possible to set a light emitting area so as to suit the purpose of use of illumination, and by combining these seven light emitting areas, it is possible to obtain any necessary visible light.
実施の形態１を示す、光源部平面図２において、青色ＬＥＤベアチップあるいは紫色ＬＥＤベアチップ１２を４０個直列に接続し、その縦方向配列ピッチを２．５ｍｍとした。また横方向は遮蔽壁ピッチを３．５ｍｍとして、七つのストライプ状発光領域を４セット繰り返し、二十八列配置した。遮蔽壁２２の底部幅は１．０ｍｍであり、高さは１．０ｍｍとした。総数１１２０個の各々のＬＥＤチップを３Ｖ、３５０ｍＡで駆動し、ＬＥＤチップへの全投入電力を約１１８０Ｗとした。
七つの発光領域を組み合わせ、それぞれの発光領域からの放射強度を調整して得られた発光スペクトルを図９に示す。
太陽光と近似した概ね４５０ｎｍから７００ｎｍの連続スペクトルを得ることができた。また、遮蔽壁２２は熱伝導性に優れたＬＥＤベアチップ実装基板と一体化しているため、蛍光体層の温度上昇を低減することが可能となった。In the light source unit plan view 2 showing the first embodiment, 40 blue LED bare chips or purple LED bare chips 12 are connected in series, and the vertical arrangement pitch is 2.5 mm. In the horizontal direction, the shielding wall pitch was set to 3.5 mm, and four sets of seven stripe light emitting regions were repeated and arranged in 28 rows. The bottom width of the shielding wall 22 was 1.0 mm and the height was 1.0 mm. A total of 1120 LED chips were driven at 3 V and 350 mA, and the total input power to the LED chips was about 1180 W.
FIG. 9 shows an emission spectrum obtained by combining seven emission regions and adjusting the radiation intensity from each emission region.
A continuous spectrum of approximately 450 nm to 700 nm, which approximated that of sunlight, could be obtained. Moreover, since the shielding wall 22 is integrated with the LED bare chip mounting substrate having excellent thermal conductivity, it is possible to reduce the temperature rise of the phosphor layer.
次に実施の形態１に対する実験例２につき説明する。実施の形態１を示す、光源部図面１及び光源部平面図２において、５３５ｎｍ〜５５０ｎｍに発光のピークを有する緑蛍光体、例えば、電気化学（株）製のナイトライド系（βサイアロン）蛍光体粉末をシリコーン系封止材に分散させて、青色ＬＥＤベアチップ、例えばＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を覆うように充填した第二の発光領域２６と、５９０ｎｍから６００ｎｍに発光のピークを有する黄色蛍光体、例えば、電気化学（株）製ナイトライド系（αサイアロン）蛍光体粉末をシリコーン系封止材に分散させて、青色ＬＥＤベアチップ、例えばＧｅｎｅＬｉｔｅ社製Ｂ４５４５ＥＣＩ０を覆うように充填した第三の発光領域２８の二種類の発光領域で構成する。青色ＬＥＤベアチップ１２を４０個直列に接続し、その縦方向配列ピッチを２．５ｍｍとした。また横方向配列ピッチを３．５ｍｍとして、二種類の発光領域を１４セット繰り返し、二十八列配置した。総数１１２０個の各々のＬＥＤチップを３Ｖ、３５０ｍＡで駆動し、ＬＥＤチップへの全投入電力を約１１８０Ｗとした。かかる光源からの発光スペクトルを図１０に示す。
赤色蛍光体を添加していないため擬似太陽光としては満足できるレベルではないが、疑似白色光としては良好なレベルにある（色温度と偏差）。製造工程が比較的簡単で、制御も容易である等、コストダウンできるメリットがある。Next, experimental example 2 for the first embodiment will be described. In the light source part drawing 1 and the light source part plan view 2 showing the first embodiment, a green phosphor having a light emission peak at 535 nm to 550 nm, for example, a nitride (β sialon) phosphor manufactured by Electrochemical Co., Ltd. Dispersing the powder in a silicone-based encapsulant and filling a blue LED bare chip, for example, a B4545ECI0 manufactured by GeneLite, to cover the second light emitting region 26, and a yellow phosphor having a light emission peak from 590 nm to 600 nm, for example, Two of the third light emitting regions 28 filled with a blue LED bare chip, for example, B45545ECI0 manufactured by GeneLite, dispersed in a silicone-based sealing material with a nitride-based (α sialon) phosphor powder manufactured by Electrochemical Co., Ltd. Consists of different light emitting areas. Forty blue LED bare chips 12 were connected in series, and the vertical arrangement pitch was 2.5 mm. Further, the horizontal arrangement pitch was set to 3.5 mm, and 14 sets of two kinds of light emitting regions were repeated and arranged in 28 rows. A total of 1120 LED chips were driven at 3 V and 350 mA, and the total input power to the LED chips was about 1180 W. The emission spectrum from such a light source is shown in FIG.
Since the red phosphor is not added, it is not a satisfactory level as pseudo-sunlight, but is at a satisfactory level as pseudo-white light (color temperature and deviation). The manufacturing process is relatively simple and the control is easy, so there is an advantage that the cost can be reduced.
図１１に実施の形態２を示す。実施の形態１の構成に放熱部として、ヒートパイプ部５６と放熱フィン５８とを追加したものである。
ヒートパイプ５６は金属基板１０のＬＥＤベアチップ１２の実装と反対の面に配設され、例えばＣｕにＮｉメッキ処理したものを使用した。またヒートパイプ中に水を注入したものを使用した。図１１ではヒートパイプ部５６を金属基板１０内に埋め込む形態としているが、ＬＥＤベアチップ１２の実装基板にヒートパイプ部５６を接合する構造としても良い。ヒートパイプ部５６は放熱フィン５８に圧入接合しているが、他の熱抵抗の小さい接合の工法も可能である。図１１において例えば、消費電力１Ｗタイプのチップを１１２０個実装し、発光部全体に約１１８０Ｗ投入した。この際の金属基板１０の裏面温度は７８℃以下であり、実用上問題ない温度であることを確認した。FIG. 11 shows a second embodiment. A heat pipe portion 56 and heat radiating fins 58 are added to the configuration of the first embodiment as heat radiating portions.
The heat pipe 56 is disposed on the surface of the metal substrate 10 opposite to the mounting of the LED bare chip 12, and for example, Cu plated with Ni is used. Moreover, what poured water into the heat pipe was used. In FIG. 11, the heat pipe portion 56 is embedded in the metal substrate 10. However, the heat pipe portion 56 may be bonded to the mounting substrate of the LED bare chip 12. The heat pipe portion 56 is press-fitted and joined to the radiating fin 58, but other joining methods with low thermal resistance are also possible. In FIG. 11, for example, 1120 power consumption type 1W chips are mounted, and about 1180 W is supplied to the entire light emitting unit. At this time, the back surface temperature of the metal substrate 10 was 78 ° C. or lower, and it was confirmed that the temperature was not problematic in practice.
１０ 実装基板
１２ ＬＥＤベアチップ，青色ＬＥＤベアチップ、紫色ＬＥＤベアチップ
１４ ダイボンド樹脂
１９ 封止枠
２０ 封止材の層
２２ 遮蔽壁
２３ 第四の発光領域
２４ 第一の発光領域
２５ 第五の発光領域
２６ 第二の発光領域
２７ 第六の発光領域
２８ 第三の発光領域
２９ 第七の発光領域
３０ 第一の蛍光体層
３４ 第二の蛍光体層
３８ 第三の蛍光体層
４２ 緑色蛍光体
４４ 黄色蛍光体
４８ 緑色蛍光体
５０ 赤色蛍光体
５６ 熱輸送パイプ（ヒートパイプ）
５８ 放熱フィンDESCRIPTION OF SYMBOLS 10 Mounting board 12 LED bare chip, blue LED bare chip, purple LED bare chip 14 Die bond resin 19 Sealing frame 20 Sealing material layer 22 Shielding wall 23 Fourth light emitting area 24 First light emitting area 25 Fifth light emitting area 26 Second light emitting region 27 Sixth light emitting region 28 Third light emitting region 29 Seventh light emitting region 30 First phosphor layer 34 Second phosphor layer 38 Third phosphor layer 42 Green phosphor 44 Yellow phosphor Body 48 Green phosphor 50 Red phosphor 56 Heat transport pipe (heat pipe)
58 Heat dissipation fin
Claims (2)
前記第一の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって５１０ｎｍから５２０ｎｍに発光のピークを有する緑色蛍光体とから構成され、
前記第二の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって５３５ｎｍから５５０ｎｍに発光のピークを有する緑蛍光体とから構成され、
前記第三の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって５９０ｎｍから６００ｎｍに発光のピークを有する黄色蛍光体とから構成され、
前記第四の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって６４０ｎｍから６５０ｎｍに発光のピークを有する赤色蛍光体とから構成され、
前記第五の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって６２０ｎｍから６３０ｎｍに発光のピークを有する赤色蛍光体とから構成され、
前記第六の発光領域が前記青色ＬＥＤベアチップと前記蛍光体であって５２０ｎｍから５３０ｎｍに発光のピークを有する緑色蛍光体とから構成され、
前記第七の発光領域が前記紫色ＬＥＤベアチップと前記蛍光体であって４７０ｎｍから５００ｎｍに発光のピークを有する青緑色蛍光体とから構成されることを特徴とする黒体放射スペクトル型ＬＥＤ照明装置。 Having a slope, and the metal substrate having a striped shielding wall, the LED bare chip in which a plurality of sequences comprising a blue LED bare chip and purple LED bare chip is bonded to the concave surface of the metal substrate, the LED for each sequence a circuit board that can drive control the bare chip, and sealing frame surrounding the plurality of the LED bare chips If you contact are both hardwired with all or a portion of the circuit board on the surface of the metal substrate, wherein A sealing material that seals the LED bare chip while being in contact with the LED bare chip inside the sealing frame, and adds a fluorescence spectrum in which each of the plurality of phosphors emits fluorescence, thereby obtaining a black body radiation spectrum. the phosphor amount was applied to the slope face and the concave portion formed by integrating the LED bare chip independently to the shield wall, the first filled with the sealant that meets A planar light-emitting module having the seventh light-emitting region, constituting an optical system to focus the planar light-emitting module, heat sink backside and the shield wall of the metal substrate, heat pipes and / or heat radiation fins and the joint, closely or The shielding wall has a hollow structure inside, has a heat pump function, further includes a heat conductive film laminated on the upper layer of the sealing material, and planarizes the light emitted from the LED bare chip. As light emission,
The first light emitting region is composed of the blue LED bare chip and the phosphor, and a green phosphor having a light emission peak from 510 nm to 520 nm,
The second light emitting region is composed of the blue LED bare chip and the phosphor, and a green phosphor having a light emission peak from 535 nm to 550 nm,
The third light emitting region is composed of the blue LED bare chip and the phosphor, and a yellow phosphor having a light emission peak from 590 nm to 600 nm,
The fourth light emitting region is composed of the blue LED bare chip and the phosphor, and a red phosphor having a light emission peak from 640 nm to 650 nm,
The fifth light emitting region is composed of the blue LED bare chip and the phosphor, and a red phosphor having a light emission peak from 620 nm to 630 nm,
The sixth light emitting region is composed of the blue LED bare chip and the phosphor, and a green phosphor having a light emission peak from 520 nm to 530 nm;
The black body radiation spectrum type LED lighting device according to claim Rukoto is composed of a blue-green phosphor having a seventh peak emission region of the light emission in the 500nm from 470nm A the phosphor and the purple LED bare chips.
Black body radiation according to claim 1, characterized by further comprising a lens system mechanism that can move the upper surface direction 30~200mm of the sealing material or the thermally conductive film to be laminated thereon Spectral LED lighting device.
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