JP2014013895A - 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 - Google Patents

入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 Download PDF

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Publication number
JP2014013895A
JP2014013895A JP2013134033A JP2013134033A JP2014013895A JP 2014013895 A JP2014013895 A JP 2014013895A JP 2013134033 A JP2013134033 A JP 2013134033A JP 2013134033 A JP2013134033 A JP 2013134033A JP 2014013895 A JP2014013895 A JP 2014013895A
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JP
Japan
Prior art keywords
solution
texturing
wafer
oxygen
single crystal
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Pending
Application number
JP2013134033A
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English (en)
Japanese (ja)
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JP2014013895A5 (enExample
Inventor
K Bar Robert
ロバート・ケー．バー
Corey O'connor
コーリ・オコーナー
W Hinckley Peter
ピーター・ダブリュ．ヒンクリー
George R Allardyce
ジョージ・アール．アラーダイス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Publication of JP2014013895A publication Critical patent/JP2014013895A/ja
Publication of JP2014013895A5 publication Critical patent/JP2014013895A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
JP2013134033A 2012-06-27 2013-06-26 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 Pending JP2014013895A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/535,224 US20140004701A1 (en) 2012-06-27 2012-06-27 Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance
US13/535,224 2012-06-27

Publications (2)

Publication Number Publication Date
JP2014013895A true JP2014013895A (ja) 2014-01-23
JP2014013895A5 JP2014013895A5 (enExample) 2016-07-28

Family

ID=48699591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013134033A Pending JP2014013895A (ja) 2012-06-27 2013-06-26 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化

Country Status (6)

Country Link
US (1) US20140004701A1 (enExample)
EP (1) EP2680314A1 (enExample)
JP (1) JP2014013895A (enExample)
KR (1) KR20140004010A (enExample)
CN (1) CN103515481B (enExample)
TW (1) TWI488944B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172907A1 (ja) * 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001351906A (ja) * 2000-06-06 2001-12-21 Canon Inc シリコン基板のエッチング方法
JP2011139023A (ja) * 2009-09-24 2011-07-14 Rohm & Haas Electronic Materials Llc 半導体基体のテクスチャ化
JP2011205058A (ja) * 2009-12-17 2011-10-13 Rohm & Haas Electronic Materials Llc 半導体基体をテクスチャ化する改良された方法
JP2012114449A (ja) * 2010-11-24 2012-06-14 Air Products & Chemicals Inc シリコンウェハーのテクスチャ形成用の組成物及び方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129212B2 (en) * 2008-03-25 2012-03-06 Applied Materials, Inc. Surface cleaning and texturing process for crystalline solar cells
CN101661972B (zh) * 2009-09-28 2011-07-20 浙江大学 一种低表面反射率的单晶硅太阳电池绒面制作工艺
CN102181935B (zh) * 2010-10-26 2012-09-19 浚鑫科技股份有限公司 一种制作单晶硅绒面的方法及腐蚀液
US9038724B2 (en) * 2010-11-16 2015-05-26 Halliburton Energy Services, Inc. Oxygen scavenger compositions for completion brines

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001351906A (ja) * 2000-06-06 2001-12-21 Canon Inc シリコン基板のエッチング方法
JP2011139023A (ja) * 2009-09-24 2011-07-14 Rohm & Haas Electronic Materials Llc 半導体基体のテクスチャ化
JP2011205058A (ja) * 2009-12-17 2011-10-13 Rohm & Haas Electronic Materials Llc 半導体基体をテクスチャ化する改良された方法
JP2012114449A (ja) * 2010-11-24 2012-06-14 Air Products & Chemicals Inc シリコンウェハーのテクスチャ形成用の組成物及び方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022172907A1 (ja) * 2021-02-10 2022-08-18 株式会社トクヤマ 基板の処理方法、および該処理方法を含むシリコンデバイスの製造方法

Also Published As

Publication number Publication date
CN103515481A (zh) 2014-01-15
TWI488944B (zh) 2015-06-21
CN103515481B (zh) 2016-07-06
EP2680314A1 (en) 2014-01-01
KR20140004010A (ko) 2014-01-10
TW201418417A (zh) 2014-05-16
US20140004701A1 (en) 2014-01-02

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