JP2014013895A5 - - Google Patents

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Publication number
JP2014013895A5
JP2014013895A5 JP2013134033A JP2013134033A JP2014013895A5 JP 2014013895 A5 JP2014013895 A5 JP 2014013895A5 JP 2013134033 A JP2013134033 A JP 2013134033A JP 2013134033 A JP2013134033 A JP 2013134033A JP 2014013895 A5 JP2014013895 A5 JP 2014013895A5
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JP
Japan
Prior art keywords
solution
less
ammonium hydroxide
oxygen
unsubstituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013134033A
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English (en)
Japanese (ja)
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JP2014013895A (ja
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Publication date
Priority claimed from US13/535,224 external-priority patent/US20140004701A1/en
Application filed filed Critical
Publication of JP2014013895A publication Critical patent/JP2014013895A/ja
Publication of JP2014013895A5 publication Critical patent/JP2014013895A5/ja
Pending legal-status Critical Current

Links

JP2013134033A 2012-06-27 2013-06-26 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化 Pending JP2014013895A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/535,224 US20140004701A1 (en) 2012-06-27 2012-06-27 Texturing of monocrystalline semiconductor substrates to reduce incident light reflectance
US13/535,224 2012-06-27

Publications (2)

Publication Number Publication Date
JP2014013895A JP2014013895A (ja) 2014-01-23
JP2014013895A5 true JP2014013895A5 (enExample) 2016-07-28

Family

ID=48699591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013134033A Pending JP2014013895A (ja) 2012-06-27 2013-06-26 入射光反射率を低減させるための単結晶半導体基体のテクスチャ化

Country Status (6)

Country Link
US (1) US20140004701A1 (enExample)
EP (1) EP2680314A1 (enExample)
JP (1) JP2014013895A (enExample)
KR (1) KR20140004010A (enExample)
CN (1) CN103515481B (enExample)
TW (1) TWI488944B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240112917A1 (en) * 2021-02-10 2024-04-04 Tokuyama Corporation Method for processing substrate, and method for manufacturing silicon device comprising said processing method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001351906A (ja) * 2000-06-06 2001-12-21 Canon Inc シリコン基板のエッチング方法
US8129212B2 (en) * 2008-03-25 2012-03-06 Applied Materials, Inc. Surface cleaning and texturing process for crystalline solar cells
US7955989B2 (en) * 2009-09-24 2011-06-07 Rohm And Haas Electronic Materials Llc Texturing semiconductor substrates
CN101661972B (zh) * 2009-09-28 2011-07-20 浙江大学 一种低表面反射率的单晶硅太阳电池绒面制作工艺
CN102169818B (zh) * 2009-12-17 2013-12-11 罗门哈斯电子材料有限公司 纹理化半导体衬底的改进方法
CN102181935B (zh) * 2010-10-26 2012-09-19 浚鑫科技股份有限公司 一种制作单晶硅绒面的方法及腐蚀液
US9038724B2 (en) * 2010-11-16 2015-05-26 Halliburton Energy Services, Inc. Oxygen scavenger compositions for completion brines
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers

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