JP2014007232A - Semiconductor laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device which achieves high coupling efficiency.SOLUTION: A semiconductor laser device comprises: a base; a condensing lens arranged on the base; a plurality of semiconductor laser modules each having an active layer which emits laser beams on the base, which are installed on the base such that each slow axis is perpendicular to a base principal surface and laser beams emitted toward the condensing lenses do not interfere with each other; and a fast axis adjustment mechanism for adjusting orientations of the modules with respect to the base in a fast axis direction. The semiconductor laser module includes: a light-emitting element including the active layer; a fast-axis collimator lens which is fixed with respect to the light-emitting element and collimates laser beams emitted from the light-emitting element; a slow-axis collimator lens for collimating laser beams passed through the fast-axis collimator lens; and a slow-axis adjustment mechanism for adjusting the slow-axis collimator lens to a slow axis direction with respect to the semiconductor laser module.

Description

  The present invention relates to a semiconductor laser device.

  2. Description of the Related Art A laser output type semiconductor laser device in which a plurality of single emitter light emitting elements are arranged in a three-dimensional manner and lasers output from the plurality of light emitting elements are coupled is known. For example, Patent Document 1 discloses an apparatus in which a plurality of laser diode subassemblies including light emitting elements are mounted adjacent to each other on a cooling block member having a stepped mounting surface so that the output lasers do not interfere with each other. It is disclosed. Each laser diode subassembly is disposed in the immediate vicinity of the light emitting element, and collects the laser output from the light emitting element in the fast axis direction and the laser that has passed through the first lens in the slow axis direction. A second lens that emits light is provided, and the output laser from the plurality of laser diode subassemblies is coupled by the first lens and the second lens.

JP 2010-80260 A

  Since the semiconductor laser has a wide laser emission angle in the first axis direction, in the apparatus described in Patent Document 1, the laser diode subassembly is attached to the cooling block member with the first axis collimator lens attached to each light emitting element. For this reason, in the apparatus described in Patent Document 1, in order to adjust the optical axis in the fast axis direction of the output laser, it is necessary to remove the first lens and perform fine adjustment. Thus, it is difficult to adjust the first lens of the plurality of laser diode subassemblies. For this reason, in the apparatus described in Patent Document 1, it is difficult to realize high coupling efficiency.

  Therefore, an object of the present invention is to provide a semiconductor laser device that can realize high coupling efficiency.

  A semiconductor laser device according to one aspect of the present invention is a semiconductor laser module that includes a base having a main surface, a condenser lens disposed on the main surface of the base, and an active layer that emits laser light, respectively. A plurality of semiconductor laser modules mounted on the main surface of the base so that the slow axis is orthogonal to the main surface of the base and the laser beams emitted toward the condenser lens do not interfere with each other; A first axis adjusting mechanism that adjusts a direction in a first axis direction with respect to the base, and the semiconductor laser module includes a light emitting element including an active layer, and a laser beam fixed to the light emitting element and emitted from the light emitting element. The first axis collimator lens that collimates in the first axis direction and the laser beam that has passed through the first axis collimator lens. Comprising a slow axis collimator lens for collimating in the direction, and the slow axis adjusting mechanism for adjusting the slow axis orientation of the slow axis collimator lens with respect to the semiconductor laser module.

  In the semiconductor laser device according to one aspect of the present invention, the direction of the semiconductor laser module is adjusted in the first axis direction with respect to the base by the first axis adjustment mechanism, and the direction of the slow axis collimator lens is adjusted to the semiconductor laser module by the slow axis adjustment mechanism. On the other hand, it is adjusted in the slow axis direction. Thereby, the emission angle of the output laser beam of the semiconductor laser module is adjusted in the fast axis direction and the slow axis direction. Therefore, it is possible to easily align and fix so that the outputs of the plurality of semiconductor laser modules are in the optimum coupling state, and high coupling efficiency can be realized.

  In one embodiment, the semiconductor laser module may be arranged such that laser light that is separated from the laser light output from the adjacent semiconductor laser module at a predetermined interval is output. In this case, it is possible to condense and combine the laser beams separated by a predetermined interval by the condenser lens.

  In one embodiment, a semiconductor laser module includes an optical mount in which a surface orthogonal to a first axis is a mounting surface on which a light emitting element is mounted and a first through hole is formed in a slow axis direction, and a first axis adjustment mechanism Includes a first screw hole provided in a direction perpendicular to the main surface of the base, and a first screw inserted into the first through hole and the first screw hole, the first screw being the first through hole. There may also be an attachment mechanism that is inserted into the first screw hole and attaches the semiconductor laser module to the base. In this case, since the semiconductor laser module can be fastened to the base with the first screw hole and the first screw hole in a state where the semiconductor laser module is in a desired orientation, the orientation of the semiconductor laser module is easily based on the orientation. On the other hand, it can be adjusted in the fast axis direction.

  In one embodiment, the first screw hole is provided in a straight line along the optical axis direction of the laser beam, and the first screw hole is defined when the emission direction of the laser beam output from the semiconductor laser module is the front. The distance between the first through hole of the semiconductor laser module and the light emitting element of the first semiconductor laser module is the same as that between the first through hole of the second semiconductor laser module and the second semiconductor laser module. The semiconductor laser module may be formed shorter than the distance from the light emitting element by a predetermined distance. In this case, since the laser beams separated from the semiconductor laser module at a predetermined interval can be output, the laser beams emitted from the semiconductor laser module can be prevented from interfering with each other.

  In one embodiment, when the emission direction of the laser light output from the semiconductor laser module is the front, the distance between the first through hole of the first semiconductor laser module and the light emitting element of the first semiconductor laser module is The distance between the first through hole of the second semiconductor laser module and the light emitting element of the second semiconductor laser module arranged at the subsequent stage of the first semiconductor laser module is formed with the same length. The first through hole of the semiconductor laser module may be attached to the base so as to be shifted in the first axis direction by a predetermined distance from the first through hole of the second semiconductor laser module. In this case, the laser beams separated from the semiconductor laser module at a predetermined interval can be reliably output, so that the laser beams emitted from the semiconductor laser module can be prevented from interfering with each other.

  In one embodiment, a semiconductor laser module includes an optical mount in which a surface orthogonal to the first axis is a mounting surface on which a light emitting element is mounted and a second screw hole extending perpendicularly to the mounting surface is formed; A lens mount on which a shaft collimator lens is fixed and a second through hole is formed in the thickness direction; and a second screw inserted into the second through hole and the second screw hole, the second screw being a second screw It may be an attachment mechanism that is inserted into the through hole and the second screw hole to attach the lens mount to the optical mount. In this case, the slow axis collimator lens can be fastened to the optical mount with the second screw hole and the second screw in a state in which the slow axis collimator lens is in a desired direction. The direction of the lens can be adjusted in the slow axis direction.

  According to one aspect of the present invention, high coupling efficiency can be achieved.

1 is a perspective view of a semiconductor laser device according to a first embodiment of the present invention. It is a side view of a semiconductor laser module. It is a top view of a semiconductor laser module. FIG. 2 is a top view of the semiconductor laser device shown in FIG. 1. FIG. 2 is a side view of the semiconductor laser device shown in FIG. 1. It is a top view which shows the mode of a coupling | bonding of the output laser of the semiconductor laser apparatus shown in FIG. It is a side view which shows the mode of the coupling | bonding of the output laser of the semiconductor laser apparatus shown in FIG. 3 is a graph showing the relationship between the drive current and fiber output of the semiconductor laser device shown in FIG. 1. FIG. 6 is a top view of a semiconductor laser device according to a second embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted.

(First embodiment)
FIG. 1 is a perspective view of a semiconductor laser device 1 according to the first embodiment of the present invention. As shown in FIG. 1, the semiconductor laser device 1 of this embodiment includes a base 10, three semiconductor laser modules 20 </ b> A to 20 </ b> C, and a condenser lens 40. The semiconductor laser device 1 is a device that couples the laser beams emitted from the semiconductor laser modules 20 </ b> A to 20 </ b> C and guides them to the optical fiber 50. For convenience of explanation, the first mounting position axis direction of the laser light emitted from the semiconductor laser modules 20A to 20C is the X-axis direction, the slow axis direction is the Y-axis direction, and the direction perpendicular to the X-axis direction and the Y-axis direction. Is the Z-axis direction. In the present specification, the emission direction of the laser light is referred to as the front, and the opposite direction is referred to as the rear.

  The base 10 is a plate-like member arranged on the XZ plane. Semiconductor laser modules 20 </ b> A to 20 </ b> C and a condenser lens 40 are placed on the main surface of the base 10. The base 10 cools the semiconductor laser modules 20A to 20C by transferring the heat generated in the semiconductor laser modules 20A to 20C to a heat sink provided thereunder and dissipating the heat.

  The semiconductor laser modules 20A to 20C are arranged on the base 10 along the Z-axis direction. Since the semiconductor laser modules 20A to 20C have substantially the same configuration, hereinafter, the semiconductor laser modules 20A to 20C will be simply referred to as the semiconductor laser module 20 and the configuration will be described.

  2 and 3, the semiconductor laser module 20 includes an optical block base (optical mount) 21, a light emitting element 23, an LD mount 25, a first axis collimator lens (hereinafter referred to as “FAC lens”) 29, and a slow. An axis collimator lens mount (hereinafter referred to as “SAC lens mount”) 31 and a slow axis collimator lens (hereinafter referred to as “SAC lens”) 35 are provided.

  The optical block base 21 is a member made of aluminum that has a rectangular parallelepiped shape and is subjected to black alumite treatment. One surface of the optical block base 21 is a mounting surface on which the light emitting element 23 is mounted. A through hole (first through hole) 36 that penetrates the optical block table 21 in the Y-axis direction is provided on a surface perpendicular to the mounting surface of the optical block table 21.

  The light emitting element 23 is a semiconductor laser element having a laminated structure including an active layer, and is mounted on an LD mount 25 having a rectangular parallelepiped shape made of copper or copper alloy. A FAC lens 29 is attached with a precision UV curable resin at a position closest to the emission end face of the light emitting element 23 of the LD mount 25. The FAC lens 29 is an optical element that collimates the laser light emitted from the light emitting element 23 in the first axis direction. In the FAC lens 29, a CCD camera having a neutral density filter is disposed at a position about 1 m away from the emission end face of the light emitting element 23, and the beam diameter in the first axis direction of the laser light emitted from the light emitting element 23 is minimized. And is fixed to the LD mount 25 in a state where the parallel light is adjusted to coincide with the optical axis.

  The LD mount 25 is fixed to the mounting surface of the optical block base 21 by a hexagonal spacer 27 with the emission end face of the mounted light emitting element 23 and the FAC lens 29 facing the Z-axis direction.

  The SAC lens 35 is an optical element that collimates the laser light that has passed through the FAC lens 29 in the slow axis direction. For example, the SAC lens 35 is a plano-convex cylindrical lens having a focal length f of 20 mm.

  The SAC lens mount 31 is a substantially flat plate-shaped member having one bent end 31B, and a SAC lens 35 is attached to the tip of the bent portion 31B. A through hole (second through hole) 31C that penetrates the flat plate portion 31A in the thickness direction is provided on the other end portion side of the flat plate portion 31A that is a flat plate portion.

  A screw hole (second screw hole) 32 extending in a direction perpendicular to the mounting surface is formed in front of the mounting position of the LD mount 25 on the optical block base 21, and the screw 33 is formed in the through hole 31 </ b> C and the screw hole 32. The SAC lens mount 31 and the optical block base 21 are fastened by being inserted. In a state where the screw 33 is loosened, the SAC lens mount 31 is rotatable in a plane horizontal to the mounting surface of the optical block base 21 with the through hole 31C as a fulcrum. On the other hand, when the screw 33 is tightened, the SAC lens mount 31 is fixed to the optical block base 21. As described above, by adjusting the fixing position of the SAC lens mount 31, the angle of the SAC lens 35 with respect to the optical axis of the laser light can be changed in the slow axis direction. The through hole 31C, the screw hole 32, and the screw 33 function as a slow shaft adjusting mechanism.

  As shown in FIGS. 4 and 5, the semiconductor laser module 20 is arranged on the base 10 along the Z-axis direction. 4 and 5, only two semiconductor laser modules 20A and 20B among the semiconductor laser modules 20A to 20C are illustrated for convenience of explanation.

  The base 10 is provided with a screw hole (first screw hole) 11 on a straight imaginary line L extending in the Z-axis direction so as to correspond to the mounting positions of the semiconductor laser modules 20A and 20B. The screw hole 11 is an attachment mechanism corresponding to the through hole 36 of the optical block base 21.

  The semiconductor laser modules 20A and 20B are mounted on the base so that the mounting surfaces coincide with the YZ plane, and the screws 37 are inserted into the through holes 36 and the screw holes 11, so that the semiconductor laser modules 20A and 20B are the bases. 10 is fastened.

  In a state where the screw 37 is loosened, the semiconductor laser modules 20A and 20B are rotatable in the horizontal plane of the base 10 with the through hole 36 as a fulcrum. On the other hand, in a state where the screw 37 is tightened, the semiconductor laser modules 20 </ b> A and 20 </ b> B are fixed to the base 10. Thus, in the semiconductor laser device 1, the direction of the semiconductor laser module 20 can be set in the X-axis direction with the through hole 36 as a fulcrum. Thereby, the angle of the laser beam emitted from the semiconductor laser module 20 is changed in the X-axis direction. The through hole 36, the screw hole 11, and the screw 37 function as a first axis adjusting mechanism.

The width W1 of the optical block base 21 of the semiconductor laser module 20A is formed to be smaller than the width W2 of the optical block base 21 of the semiconductor laser module 20B disposed downstream of the semiconductor laser module 20A. On the other hand, the distance from the main surface facing the mounting surface of the optical block base 21 of the semiconductor laser module 20A to the through hole 36, and the main surface facing the mounting surface of the optical block base 21 of the semiconductor laser module 20B to the through hole 36. The through holes 36 are respectively formed in the optical block base 21 so that the distances of the optical block 21 are the same. Therefore, the distance d1 between the through hole 36 of the semiconductor laser module 20A and the light emitting element 23 of the semiconductor laser module 20A is larger than the distance d2 between the through hole 36 of the semiconductor laser module 20B and the light emitting element 23 of the semiconductor laser module 20B. It is formed shorter by a predetermined distance D (that is, the difference between the width w2 and the width w1). The interval D is, for example, 1.5 mm. The semiconductor laser module 20 </ b> A and the semiconductor laser module 20 </ b> B are arranged so that the main surfaces of the optical block bases 21 facing the mounting surface are located on the same plane. Thereby, the laser light is emitted from the semiconductor laser modules 20A and 20B by a predetermined distance D, and the laser lights do not interfere with each other.

  As shown in FIGS. 6 and 7, the condensing lens 40 condenses the laser beams emitted parallel to each other from the semiconductor laser modules 20A to 20C, and combines the laser beams. The combined laser light is guided to the optical fiber 50 disposed on the focal plane of the condenser lens 40. As the condensing lens 40, for example, a GRADIUM lens (focal length f = 15 mm) manufactured by Lightpath can be used. As the optical fiber 50, for example, MM-S105 / 125-15A (core diameter: 105 μmφ, NAO.15) manufactured by Nufern can be used.

  Next, a mechanism for adjusting the emission angle of the laser beam emitted from the semiconductor laser module 20 will be described. As described above, in the state where the screw 37 is loosened, the semiconductor laser module 20 is rotatable in the horizontal plane of the base 10 with the through hole 36 as a fulcrum. The semiconductor laser module 20 is fastened and fixed to the base 10 with screws 37 at an angle at which the angle of the output laser light is adjusted in the X-axis direction to obtain optimum coupling efficiency.

  Further, as described above, in the state where the screw 33 is loosened, the SAC lens mount 31 is rotatable in a plane horizontal to the mounting surface of the optical block base 21 with the through hole 31C as a fulcrum. The angle of the SAC lens 35 with respect to the optical axis of the laser light can be changed in the slow axis direction by rotating. The SAC lens 35 is fastened and fixed by the optical block base 21 with a screw 33 at an angle at which the angle of the SAC lens 35 is adjusted in the X-axis direction to obtain an optimum coupling efficiency.

  As described above, in the semiconductor laser device 1 according to this embodiment, the orientation of the semiconductor laser module 20 is adjusted in the fast axis direction with respect to the base 10 by the fast axis adjustment mechanism, and the SAC lens 35 is adjusted by the slow axis adjustment mechanism. Adjustment is made in the slow axis direction with respect to the semiconductor laser module 20. Thereby, the emission angle of the output laser beam of the semiconductor laser module 20 is adjusted in the fast axis direction and the slow axis direction. Therefore, it is possible to easily align and fix the outputs of the plurality of semiconductor laser modules 20 so as to be in an optimum coupling state, thereby realizing high coupling efficiency.

  Further, in the semiconductor laser device 1 according to the present embodiment, the laser light separated by the predetermined distance D can be condensed by the condensing lens 40 and combined.

  In the present embodiment, the semiconductor laser module 20 can be fastened to the base 10 with 11A and 11B and the screw 37 with the semiconductor laser module 20 in a desired orientation. Can be adjusted in the fast axis direction with respect to the base 10.

  In the present embodiment, the screw holes 11A and 11B are provided on a straight line along the optical axis direction (Z direction) of the laser light, and the distance d1 between the mounting position of the semiconductor laser module 20A and the light emitting element 23 is provided. However, since it is formed shorter than the distance d2 between the mounting position of the semiconductor laser module 20B and the light emitting element 23 by the predetermined distance D, the laser beam that is reliably separated from the semiconductor laser module at the predetermined distance D is output. be able to.

  In the present embodiment, the semiconductor laser module 20 can be fastened to the base 10 with the screw holes 32 and the screws 33 in a state in which the semiconductor laser module 20 is in a desired direction. Can be adjusted in the slow axis direction.

(Second Embodiment)
Next, a second embodiment of the present invention will be described with reference to FIG. The semiconductor laser device 1 </ b> A according to the present embodiment is the same as the semiconductor laser device 1 except for the dimensions and installation position of the semiconductor laser module 20 from the first embodiment.

  In the semiconductor laser device 1A, the base 10 is provided with screw holes 11 on the virtual line L1 and the virtual line L2 along the Z-axis direction. The virtual line L1 and the virtual line L2 are parallel virtual lines separated by a predetermined distance D. In the semiconductor laser device 1A, the width W1 of the optical block base 21 of the semiconductor laser module 20A is the same as the width W2 of the optical block base 21 of the semiconductor laser module 20B disposed downstream of the semiconductor laser module 20A. For this reason, the semiconductor laser module 20A is attached to the base 10 so as to be shifted in the X-axis direction by a predetermined distance D from the semiconductor laser module 20B. Even in such a configuration, the laser beams output from the semiconductor laser modules 20A and 20B are separated by a predetermined distance D and do not interfere with each other.

  Such a semiconductor laser device 1A also has the same effect as the semiconductor laser device 1 described above. Further, in the semiconductor laser device 1A, since the semiconductor laser module 20 is formed in the same shape, the manufacturing cost can be reduced.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the said embodiment, It changed within the range which does not change the summary described in each claim, or was applied to another thing. May be.

  For example, in the above embodiment, the example in which the semiconductor laser devices 1 and 1A include the three semiconductor laser modules 20 has been described. However, the semiconductor laser device according to the present invention includes any number of semiconductor laser modules as necessary. It may be.

  In the above embodiment, one through hole 36 is provided in the optical block 21, and the semiconductor laser module 20 and the base 10 are fastened through the through hole 36. The fastening method with 10 is not limited. For example, two through holes are formed in the semiconductor laser module 20, and two through holes corresponding to the through holes of the semiconductor laser module 20 are formed in the base 10. The through holes of the semiconductor laser module 20 and the base 10 are penetrated. The semiconductor laser module 20 and the base 10 may be fastened by a nut inserted in the hole and a nut disposed on the back surface of the base. In this case, by setting one of the through holes formed in the semiconductor laser module 20 or the base 10 as a long hole extending in the fast axis direction, the direction of the semiconductor laser module 20 is adjusted in the fast axis direction with respect to the base. be able to.

  Hereinafter, although this embodiment is described more concretely based on an Example, this invention is not limited at all by these Examples.

  In this example, the coupling efficiency of the semiconductor laser device 1 was measured. In this embodiment, the output laser beams from the two semiconductor laser modules 20 are combined. As the FAC lens 29, D141-759 manufactured by Doric Lens was used. As the SAC lens, a plano-convex cylindrical lens having a focal length f of 20 mm was used. As the condenser lens 40, a GRADIUM lens (focal length f = 15 mm) manufactured by Lightpath was used. As the optical fiber 50, for example, MM-S105 / 125-15A (core diameter: 105 μmφ, NAO.15) manufactured by Nufern was used.

  In the above configuration, the change in the fiber output when the drive current applied to the semiconductor laser device 1 was changed was measured. The result is shown in FIG. In FIG. 8, the laser output from the semiconductor laser device 1 is indicated by a dotted line. As shown in FIG. 8, in this example, it was confirmed that a high coupling efficiency of about 80% can be realized for the optical fiber 50 having a core diameter as small as 105 μmφ.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor laser apparatus, 10 ... Base, 11 ... Screw hole, 20A, 20B, 20C ... Semiconductor laser module, 21 ... Optical block stand, 23 ... Light emitting element, 25 ... LD mount, 29 ... FAC lens, 31 ... SAC lens Mount, 31A ... Flat plate portion, 31B ... Bending portion, 31C ... Through hole, 32 ... Screw hole, 35 ... SAC lens, 36 ... Through hole, 40 ... Condensing lens, 50 ... Optical fiber.

Claims (6)

A base having a main surface;
A condensing lens disposed on the main surface of the base;
Semiconductor laser modules each having an active layer that emits laser light, wherein the laser light emitted on the main surface of the base is perpendicular to the main surface of the base and emitted toward the condenser lens A plurality of semiconductor laser modules mounted so as not to interfere with each other;
A first axis adjustment mechanism for adjusting the direction of the semiconductor laser module in the first axis direction with respect to the base;
With
The semiconductor laser module is:
A light emitting device comprising the active layer;
A first axis collimator lens that is fixed to the light emitting element and collimates the laser light emitted from the light emitting element in the first axis direction;
A slow axis collimator lens that collimates the laser light that has passed through the first axis collimator lens in the slow axis direction;
A slow axis adjustment mechanism for adjusting the direction of the slow axis collimator lens in the slow axis direction with respect to the semiconductor laser module;
A semiconductor laser device comprising:   2. The semiconductor laser device according to claim 1, wherein the semiconductor laser module is arranged such that laser light that is separated from the laser light output from the adjacent semiconductor laser module at a predetermined interval is output. The semiconductor laser module is:
A surface orthogonal to the first axis is a mounting surface on which the light emitting element is mounted, and an optical mount in which a first through hole is formed in the slow axis direction,
The first axis adjusting mechanism is
A first screw hole provided in a direction perpendicular to the main surface of the base;
A first screw inserted into the first through hole and the first screw hole,
3. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is an attachment mechanism for attaching the semiconductor laser module to the base by inserting the first screw into the first through hole and the first screw hole. The first screw hole is provided on a straight line along the optical axis direction of the laser beam,
When the emission direction of the laser beam output from the semiconductor laser module is the front,
The distance between the first through hole of the first semiconductor laser module and the light emitting element of the first semiconductor laser module is the second semiconductor laser disposed at the rear stage of the first semiconductor laser module. 4. The semiconductor laser device according to claim 3, wherein the semiconductor laser device is formed to be shorter by a predetermined interval than an interval between the first through hole of the module and the light emitting element of the second semiconductor laser module. When the emission direction of the laser beam output from the semiconductor laser module is the front,
The distance between the first through hole of the first semiconductor laser module and the light emitting element of the first semiconductor laser module is the second semiconductor laser disposed at the rear stage of the first semiconductor laser module. The interval between the first through hole of the module and the light emitting element of the second semiconductor laser module is formed with the same length,
The first through hole of the first semiconductor laser module is attached to the base with a predetermined interval shifted from the first through hole of the second semiconductor laser module by a predetermined distance. The semiconductor laser device according to claim 3. The semiconductor laser module is:
An optical mount in which a surface orthogonal to the first axis is a mounting surface on which the light emitting element is mounted, and a second screw hole extending perpendicularly to the mounting surface is formed;
A lens mount in which the slow axis collimator lens is fixed and a second through hole is formed in the thickness direction;
A second screw inserted into the second through hole and the second screw hole,
6. The semiconductor laser device according to claim 1, wherein the semiconductor laser device is an attachment mechanism that attaches the lens mount to the optical mount by inserting the second screw into the second through hole and the second screw hole. 7. .

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