JP2013533957A - ビアコンタクトを備える構成素子およびその製造方法 - Google Patents
ビアコンタクトを備える構成素子およびその製造方法 Download PDFInfo
- Publication number
- JP2013533957A JP2013533957A JP2013512797A JP2013512797A JP2013533957A JP 2013533957 A JP2013533957 A JP 2013533957A JP 2013512797 A JP2013512797 A JP 2013512797A JP 2013512797 A JP2013512797 A JP 2013512797A JP 2013533957 A JP2013533957 A JP 2013533957A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- component
- insulating frame
- via contact
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 229920000642 polymer Polymers 0.000 claims abstract description 31
- 239000000470 constituent Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 31
- 238000001465 metallisation Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 74
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 239000002346 layers by function Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- -1 preferably Al Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00095—Interconnects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/095—Feed-through, via through the lid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (14)
- 導電性基板(100)上の層構造内に機能が実現される構成素子であって、該構成素子は、構成素子裏側上に案内される少なくとも1つのビアコンタクト(垂直相互接続アクセスVIA)(3)を前記層構造内に実現された機能素子(18)を電気接続するために有し、
前記ビアコンタクト(3)は前記基板(100)中に接続領域を有し、該接続領域は前記基板の厚さ全体にわたって延在しており、同様に前記基板の厚さ全体にわたって延在するトレンチ状の絶縁フレーム(2)によって隣接する前記基板(100)に対して電気的に絶縁されている構成素子において、
前記トレンチ状の絶縁フレーム(2)は電気絶縁性のポリマー(21)によって充填されている、ことを特徴とする構成素子。 - 基板(100)上の層構造内に機能が実現された機能素子と、前記層構造上の導電性キャップ基板と、該キャップ基板を通って案内され、前記機能素子(18)を電気接続するための少なくとも1つのビアコンタクト(垂直相互接続アクセスVIA)(3)とを有する構成素子であって、
前記ビアコンタクト(3)は接続領域を有し、該接続領域は前記キャップ基板の厚さ全体にわたって前記基板(100)上の層構造内にある接続導体路まで延在しており、かつトレンチ状の絶縁フレーム(2)によって前記接続領域の周囲に対して電気絶縁されており、
前記トレンチ状の絶縁フレーム(2)は電気絶縁性のポリマー(21)によって充填されている構成素子。 - 前記絶縁フレーム(2)の充填部(21)は、BCB(ベンゾシクロブテン)、ポリイミド、および/またはPBO(ポリフェニレン−2,6−ベンゾビスオキサゾール)を含む、ことを特徴とする請求項1または2に記載の構成素子。
- 前記絶縁フレーム(2)のポリマー充填部(21)には充填剤、とりわけSiO2ナノ粒子および/または金属酸化物粒子が添加されている、ことを特徴とする請求項1から3までのいずれか一項に記載の構成素子。
- 前記ビアコンタクト(3)の絶縁フレーム(2)は、円形の幾何形状、とりわけ円筒形状を有する、ことを特徴とする請求項1から4までのいずれか一項に記載の構成素子。
- 前記絶縁フレーム(2)の横断面は、中央領域(24)および/または脚部領域(20)内では上方領域の横断面に対して拡張されている、ことを特徴とする請求項1から5までのいずれか一項に記載の構成素子。
- 前記ビアコンタクト(3)は、前記基板(100)上の層構造内に実現されたポリシリコン導体路(11)と接続されており、
前記ビアコンタクト(3)と前記ポリシリコン導体路(11)との間の境界面(10)は、好ましくは階段状またはビード状の立体形状を有する、ことを特徴とする請求項1から6までのいずれか一項に記載の構成素子。 - 前記ビアコンタクト(3)は、構成素子表面上に施与された金属化部(5)と接続されており、
前記金属化部(5)内には前記ビアコンタクトのための接続パッド(30;40)が形成されており、該接続パッドは前記接続領域(3)の上に直接配置されているか、またはワイヤ配線を用いて前記接続領域(3)の側方に配置されている、ことを特徴とする請求項1から7までのいずれか一項に記載の構成素子。 - 構成素子構造体がキャップ基板を有し、該キャップ基板は前記層構造の上にボンディングされており、
ボンディング接続は、表面立体形状が100nm以下であり、前記層構造の層が適切に構造化されている領域内に存在する、ことを特徴とする請求項1から8までのいずれか一項に記載の構成素子。 - ビアコンタクト(3)を有する請求項1から9までのいずれか一項に記載の構成素子の製造方法であって、半導体基板(100)から出発して、
・前記半導体基板(100)上の層構造内に少なくとも1つの導体路(11)が形成され、該導体路は一方で前記基板(100)内の少なくとも1つの接続領域(3)に直接接続しており、他方で前記層構造内に実現される少なくとも1つの機能素子(18)と電気接続しており、
・前記層構造を裏側トレンチプロセスで形成した後、前記接続領域(3)を取り囲んでおり、かつ前記基板の厚さ全体にわたって延在する絶縁フレーム(2)を前記基板(100)内に形成し、
・前記トレンチ状の絶縁フレーム(2)に電気絶縁性のポリマー(21)を充填し、
・構造化された金属化部(5)が構成素子裏側に施与され、該金属化部は前記接続領域(3)と接続しており、その中に少なくとも1つの接続パッド(30;40)が形成される製造方法。 - 前記金属化部(5)を前記裏側トレンチプロセスの前に構成素子裏側に施与し、構造化し、前記金属化部が後で実施される前記裏側トレンチプロセスのためのエッチングマスクを形成する、ことを特徴とする請求項10に記載の方法。
- 前記絶縁フレーム(2)は、中央領域(24)および/または脚部領域(20)内で等方性エッチングにより拡張される、ことを特徴とする請求項10または11に記載の方法。
- 前記絶縁フレーム(2)を充填するためのポリマー(21)は、真空条件下で基板裏側にスピンコートまたはスプレーコートされる、ことを特徴とする請求項10から12のいずれか一項に記載の方法。
- 前記ポリマー充填部は、精密研磨および/または化学機械的研磨によって平坦化される、ことを特徴とする請求項10から13のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010029504.3A DE102010029504B4 (de) | 2010-05-31 | 2010-05-31 | Bauelement mit einer Durchkontaktierung und Verfahren zu dessen Herstellung |
DE102010029504.3 | 2010-05-31 | ||
PCT/EP2011/055825 WO2011151098A2 (de) | 2010-05-31 | 2011-04-13 | Bauelement mit einer durchkontaktierung und verfahren zu dessen herstellung |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015047450A Division JP5968483B2 (ja) | 2010-05-31 | 2015-03-10 | ビアコンタクトを備える構成素子およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013533957A true JP2013533957A (ja) | 2013-08-29 |
JP5826255B2 JP5826255B2 (ja) | 2015-12-02 |
Family
ID=44625818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013512797A Active JP5826255B2 (ja) | 2010-05-31 | 2011-04-13 | ビアコンタクトを備える構成素子およびその製造方法 |
JP2015047450A Active JP5968483B2 (ja) | 2010-05-31 | 2015-03-10 | ビアコンタクトを備える構成素子およびその製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015047450A Active JP5968483B2 (ja) | 2010-05-31 | 2015-03-10 | ビアコンタクトを備える構成素子およびその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8975118B2 (ja) |
EP (1) | EP2576429B1 (ja) |
JP (2) | JP5826255B2 (ja) |
CN (1) | CN103038156B (ja) |
DE (1) | DE102010029504B4 (ja) |
WO (1) | WO2011151098A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10273147B2 (en) | 2013-07-08 | 2019-04-30 | Motion Engine Inc. | MEMS components and method of wafer-level manufacturing thereof |
JP6339669B2 (ja) * | 2013-07-08 | 2018-06-06 | モーション・エンジン・インコーポレーテッド | Memsデバイスおよび製造する方法 |
WO2015013828A1 (en) | 2013-08-02 | 2015-02-05 | Motion Engine Inc. | Mems motion sensor and method of manufacturing |
WO2015103688A1 (en) | 2014-01-09 | 2015-07-16 | Motion Engine Inc. | Integrated mems system |
US9478491B1 (en) * | 2014-01-31 | 2016-10-25 | Altera Corporation | Integrated circuit package substrate with openings surrounding a conductive via |
DE102014202825B4 (de) * | 2014-02-17 | 2023-06-07 | Robert Bosch Gmbh | Mikromechanisches Bauteil mit hermetischer Durchkontaktierung und Verfahren zur Herstellung eines mikromechanischen Bauteils mit einer hermetischen Durchkontaktierung |
WO2015154173A1 (en) | 2014-04-10 | 2015-10-15 | Motion Engine Inc. | Mems pressure sensor |
WO2015184531A1 (en) | 2014-06-02 | 2015-12-10 | Motion Engine Inc. | Multi-mass mems motion sensor |
WO2016090467A1 (en) | 2014-12-09 | 2016-06-16 | Motion Engine Inc. | 3d mems magnetometer and associated methods |
CA3220839A1 (en) | 2015-01-15 | 2016-07-21 | Motion Engine Inc. | 3d mems device with hermetic cavity |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07333078A (ja) * | 1994-06-07 | 1995-12-22 | Robert Bosch Gmbh | センサ |
JP2009016717A (ja) * | 2007-07-09 | 2009-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2009226571A (ja) * | 2008-02-28 | 2009-10-08 | Nippon Kayaku Co Ltd | マイクロデバイス及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19512427A1 (de) * | 1995-04-03 | 1996-10-10 | Inst Neue Mat Gemein Gmbh | Kompositklebstoff für optische und optoelektronische Anwendungen |
DE19525692A1 (de) * | 1995-07-14 | 1997-01-16 | Abb Research Ltd | Elektrisch und thermisch leitfähiger Kunststoff und Verwendung dieses Kunststoffs |
DE10104868A1 (de) * | 2001-02-03 | 2002-08-22 | Bosch Gmbh Robert | Mikromechanisches Bauelement sowie ein Verfahren zur Herstellung eines mikromechanischen Bauelements |
US6936491B2 (en) * | 2003-06-04 | 2005-08-30 | Robert Bosch Gmbh | Method of fabricating microelectromechanical systems and devices having trench isolated contacts |
US20050163968A1 (en) * | 2004-01-20 | 2005-07-28 | Hanket Gregory M. | Microfiller-reinforced polymer film |
US20090283308A1 (en) * | 2005-11-25 | 2009-11-19 | Atsushi Tsukamoto | Curable Resin Composition and Use Thereof |
JP4919262B2 (ja) * | 2006-06-02 | 2012-04-18 | 日立マクセル株式会社 | 貯蔵容器、樹脂の成形方法及びメッキ膜の形成方法 |
US7486525B2 (en) * | 2006-08-04 | 2009-02-03 | International Business Machines Corporation | Temporary chip attach carrier |
US8522829B2 (en) * | 2006-11-29 | 2013-09-03 | 3M Innovative Properties Company | Microphere-containing insulation |
US7538413B2 (en) * | 2006-12-28 | 2009-05-26 | Micron Technology, Inc. | Semiconductor components having through interconnects |
DE102007019639A1 (de) * | 2007-04-26 | 2008-10-30 | Robert Bosch Gmbh | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
DE102008025599B4 (de) * | 2007-05-14 | 2013-02-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gehäuste aktive Mikrostrukturen mit Direktkontaktierung zu einem Substrat |
JP5291310B2 (ja) * | 2007-08-29 | 2013-09-18 | セイコーインスツル株式会社 | 半導体装置の製造方法 |
JP4766143B2 (ja) * | 2008-09-15 | 2011-09-07 | 株式会社デンソー | 半導体装置およびその製造方法 |
US8242604B2 (en) * | 2009-10-28 | 2012-08-14 | International Business Machines Corporation | Coaxial through-silicon via |
-
2010
- 2010-05-31 DE DE102010029504.3A patent/DE102010029504B4/de not_active Expired - Fee Related
-
2011
- 2011-04-13 WO PCT/EP2011/055825 patent/WO2011151098A2/de active Application Filing
- 2011-04-13 JP JP2013512797A patent/JP5826255B2/ja active Active
- 2011-04-13 EP EP11714281.0A patent/EP2576429B1/de active Active
- 2011-04-13 US US13/701,277 patent/US8975118B2/en active Active
- 2011-04-13 CN CN201180026916.9A patent/CN103038156B/zh active Active
-
2015
- 2015-01-28 US US14/607,605 patent/US20150137329A1/en not_active Abandoned
- 2015-03-10 JP JP2015047450A patent/JP5968483B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07333078A (ja) * | 1994-06-07 | 1995-12-22 | Robert Bosch Gmbh | センサ |
JP2009016717A (ja) * | 2007-07-09 | 2009-01-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2009226571A (ja) * | 2008-02-28 | 2009-10-08 | Nippon Kayaku Co Ltd | マイクロデバイス及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5968483B2 (ja) | 2016-08-10 |
WO2011151098A2 (de) | 2011-12-08 |
CN103038156B (zh) | 2019-06-04 |
JP2015166736A (ja) | 2015-09-24 |
WO2011151098A4 (de) | 2012-04-19 |
US8975118B2 (en) | 2015-03-10 |
JP5826255B2 (ja) | 2015-12-02 |
EP2576429B1 (de) | 2017-06-14 |
CN103038156A (zh) | 2013-04-10 |
US20150137329A1 (en) | 2015-05-21 |
WO2011151098A3 (de) | 2012-02-09 |
US20130147020A1 (en) | 2013-06-13 |
DE102010029504A1 (de) | 2011-12-01 |
DE102010029504B4 (de) | 2014-02-27 |
EP2576429A2 (de) | 2013-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5968483B2 (ja) | ビアコンタクトを備える構成素子およびその製造方法 | |
US9981841B2 (en) | MEMS integrated pressure sensor and microphone devices and methods of forming same | |
US10087069B2 (en) | Semiconductor devices with moving members and methods for making the same | |
TWI511190B (zh) | 製造及封裝微電機系統之晶圓級結構及方法 | |
CA2687775C (en) | Fabrication of mems and moems components | |
US8035176B2 (en) | MEMS package and packaging method thereof | |
US9452924B2 (en) | MEMS devices and fabrication methods thereof | |
JP5090603B2 (ja) | マイクロメカニック構造素子および相当する製造方法 | |
US7618837B2 (en) | Method for fabricating high aspect ratio MEMS device with integrated circuit on the same substrate using post-CMOS process | |
US7615394B2 (en) | Method for fabricating MEMS device package that includes grinding MEMS device wafer to expose array pads corresponding to a cap wafer | |
US10155655B2 (en) | MEMS devices and fabrication methods thereof | |
CN103569937A (zh) | Mems器件及mems器件形成方法 | |
US9340410B2 (en) | Device comprising a fluid channel fitted with at least one microelectronic or nanoelectronic system, and method for manufacturing such a device | |
US8461656B2 (en) | Device structures for in-plane and out-of-plane sensing micro-electro-mechanical systems (MEMS) | |
US20050079684A1 (en) | Method of manufacturing an accelerometer | |
JP5676022B2 (ja) | マイクロメカニカル素子およびマイクロメカニカル素子の製造方法 | |
US7531424B1 (en) | Vacuum wafer-level packaging for SOI-MEMS devices | |
US20130273683A1 (en) | Method of Fabricating An Electromechanical Structure Including at Least One Mechanical Reinforcing Pillar | |
US20040081809A1 (en) | Microstructured component and method for its manufacture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140106 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150310 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150319 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150511 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150805 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150914 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151013 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5826255 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |