JP2013532621A5 - - Google Patents

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JP2013532621A5
JP2013532621A5 JP2013516546A JP2013516546A JP2013532621A5 JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5 JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5
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Japan
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buffer layer
substrate
layer
less
nanowires
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JP2013516546A
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Japanese (ja)
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JP2013532621A (ja
JP5981426B2 (ja
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Priority claimed from PCT/SE2011/050845 external-priority patent/WO2011162715A1/en
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JP2013516546A 2010-06-24 2011-06-27 配向されたナノワイヤー成長用のバッファ層を有する基板 Active JP5981426B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE1050700 2010-06-24
PCT/SE2011/050845 WO2011162715A1 (en) 2010-06-24 2011-06-27 Substrate with buffer layer for oriented nanowire growth

Publications (3)

Publication Number Publication Date
JP2013532621A JP2013532621A (ja) 2013-08-19
JP2013532621A5 true JP2013532621A5 (enExample) 2014-08-14
JP5981426B2 JP5981426B2 (ja) 2016-08-31

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JP2013516546A Active JP5981426B2 (ja) 2010-06-24 2011-06-27 配向されたナノワイヤー成長用のバッファ層を有する基板

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US (1) US9947829B2 (enExample)
EP (1) EP2586062A4 (enExample)
JP (1) JP5981426B2 (enExample)
KR (1) KR20130138657A (enExample)
CN (1) CN103098216A (enExample)
AU (1) AU2011269874B2 (enExample)
CA (1) CA2802500A1 (enExample)
SG (1) SG186312A1 (enExample)
WO (1) WO2011162715A1 (enExample)

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