JP2013532621A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013532621A5 JP2013532621A5 JP2013516546A JP2013516546A JP2013532621A5 JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5 JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013516546 A JP2013516546 A JP 2013516546A JP 2013532621 A5 JP2013532621 A5 JP 2013532621A5
- Authority
- JP
- Japan
- Prior art keywords
- buffer layer
- substrate
- layer
- less
- nanowires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE1050700 | 2010-06-24 | ||
| PCT/SE2011/050845 WO2011162715A1 (en) | 2010-06-24 | 2011-06-27 | Substrate with buffer layer for oriented nanowire growth |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013532621A JP2013532621A (ja) | 2013-08-19 |
| JP2013532621A5 true JP2013532621A5 (enExample) | 2014-08-14 |
| JP5981426B2 JP5981426B2 (ja) | 2016-08-31 |
Family
ID=45371681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013516546A Active JP5981426B2 (ja) | 2010-06-24 | 2011-06-27 | 配向されたナノワイヤー成長用のバッファ層を有する基板 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9947829B2 (enExample) |
| EP (1) | EP2586062A4 (enExample) |
| JP (1) | JP5981426B2 (enExample) |
| KR (1) | KR20130138657A (enExample) |
| CN (1) | CN103098216A (enExample) |
| AU (1) | AU2011269874B2 (enExample) |
| CA (1) | CA2802500A1 (enExample) |
| SG (1) | SG186312A1 (enExample) |
| WO (1) | WO2011162715A1 (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
| US9202945B2 (en) * | 2011-12-23 | 2015-12-01 | Nokia Technologies Oy | Graphene-based MIM diode and associated methods |
| GB201200355D0 (en) * | 2012-01-10 | 2012-02-22 | Norwegian Univ Sci & Tech Ntnu | Nanowires |
| CN103374751B (zh) * | 2012-04-25 | 2016-06-15 | 清华大学 | 具有微构造的外延结构体的制备方法 |
| GB201211038D0 (en) | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
| DE102012109594A1 (de) * | 2012-10-09 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
| FR2997557B1 (fr) * | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
| WO2014066357A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire led structure and method for manufacturing the same |
| FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
| WO2014066379A1 (en) | 2012-10-26 | 2014-05-01 | Glo Ab | Nanowire sized opto-electronic structure and method for modifying selected portions of same |
| JP6322197B2 (ja) | 2012-10-26 | 2018-05-09 | グロ アーベーGlo Ab | ナノワイヤサイズの光電構造及びその選択された部分を改質させる方法。 |
| KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
| DE102013009824A1 (de) * | 2013-06-11 | 2014-12-11 | Forschungsverbund Berlin E.V. | Halbleitervorrichtung mit Nanosäulen aus Gruppe III-Nitridmaterial und Herstellungsverfahren für eine solche Halbleitervorrichtung |
| WO2014204906A1 (en) | 2013-06-18 | 2014-12-24 | Glo-Usa, Inc. | Insulating layer for planarization and definition of the active region of a nanowire device |
| FR3007574B1 (fr) * | 2013-06-21 | 2015-07-17 | Commissariat Energie Atomique | Procede de fabrication d'une structure semiconductrice et composant semiconducteur comportant une telle structure semiconductrice |
| GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
| US8999737B2 (en) | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
| US9142745B2 (en) | 2013-08-27 | 2015-09-22 | Glo Ab | Packaged LED device with castellations |
| WO2015031179A1 (en) | 2013-08-27 | 2015-03-05 | Glo Ab | Molded led package and method of making same |
| US9972750B2 (en) | 2013-12-13 | 2018-05-15 | Glo Ab | Use of dielectric film to reduce resistivity of transparent conductive oxide in nanowire LEDs |
| EP3084847B1 (en) * | 2013-12-17 | 2018-02-14 | Glo Ab | Iii-nitride nanowire led with strain modified surface active region and method of making thereof |
| KR102285786B1 (ko) | 2014-01-20 | 2021-08-04 | 삼성전자 주식회사 | 반도체 발광 소자 |
| FR3020177B1 (fr) * | 2014-04-22 | 2016-05-13 | Commissariat Energie Atomique | Dispositif optoelectronique a rendement d'extraction lumineuse ameliore |
| KR102198694B1 (ko) | 2014-07-11 | 2021-01-06 | 삼성전자주식회사 | 반도체 발광소자 및 반도체 발광소자 제조방법 |
| KR102188494B1 (ko) * | 2014-07-21 | 2020-12-09 | 삼성전자주식회사 | 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법 |
| KR20170066319A (ko) | 2014-08-12 | 2017-06-14 | 글로 에이비 | 스트레인 수정된 표면 활성 영역을 가진 iii-질화물 나노와이어 led 및 이의 제조 방법 |
| KR102164796B1 (ko) * | 2014-08-28 | 2020-10-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102337405B1 (ko) | 2014-09-05 | 2021-12-13 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
| KR102266615B1 (ko) | 2014-11-17 | 2021-06-21 | 삼성전자주식회사 | 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법 |
| KR102237149B1 (ko) * | 2014-11-18 | 2021-04-07 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| FR3029683B1 (fr) * | 2014-12-05 | 2017-01-13 | Commissariat Energie Atomique | Dispositif electronique a element filaire s'etendant a partir d'une couche electriquement conductrice comportant du carbure de zirconium ou du carbure de hafnium |
| CA2992154A1 (en) | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
| CA2992156A1 (en) | 2015-07-13 | 2017-01-16 | Crayonano As | Nanowires or nanopyramids grown on graphitic substrate |
| US10714337B2 (en) | 2015-07-31 | 2020-07-14 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
| EP3144957A1 (en) * | 2015-09-15 | 2017-03-22 | Technische Universität München | A method for fabricating a nanostructure |
| US11322652B2 (en) * | 2015-12-14 | 2022-05-03 | Ostendo Technologies, Inc. | Methods for producing composite GaN nanocolumns and light emitting structures made from the methods |
| FR3053054B1 (fr) | 2016-06-28 | 2021-04-02 | Commissariat Energie Atomique | Structure de nucleation adaptee a la croissance epitaxiale d’elements semiconducteurs tridimensionnels |
| US10480719B2 (en) * | 2016-08-16 | 2019-11-19 | King Abdullah University Of Science And Technology | Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications |
| GB201701829D0 (en) * | 2017-02-03 | 2017-03-22 | Norwegian Univ Of Science And Tech (Ntnu) | Device |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| US10418499B2 (en) | 2017-06-01 | 2019-09-17 | Glo Ab | Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof |
| US10707374B2 (en) | 2017-09-15 | 2020-07-07 | Glo Ab | Etendue enhancement for light emitting diode subpixels |
| KR102701758B1 (ko) * | 2018-11-27 | 2024-09-04 | 삼성디스플레이 주식회사 | 발광 소자, 이의 제조 방법 및 발광 소자를 구비한 표시 장치 |
| US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
| FR3096834B1 (fr) * | 2019-05-28 | 2022-11-25 | Aledia | Dispositif optoelectronique comportant une diode electroluminescente ayant une couche limitant les courants de fuite |
| CN110190162A (zh) * | 2019-06-04 | 2019-08-30 | 深圳扑浪创新科技有限公司 | 一种led芯片的外延结构及其制备方法 |
| GB201910348D0 (en) | 2019-07-19 | 2019-09-04 | Univ Sheffield | LED Arrays |
| GB201910352D0 (en) * | 2019-07-19 | 2019-09-04 | Univ Sheffield | LED Arrays |
| GB201913701D0 (en) * | 2019-09-23 | 2019-11-06 | Crayonano As | Composition of matter |
| CN110676283B (zh) * | 2019-10-16 | 2022-03-25 | 福州大学 | 一种基于纳米线的μLED显示设计方法 |
| KR102221285B1 (ko) * | 2019-12-09 | 2021-03-03 | 한양대학교 산학협력단 | 이산화티타늄 나노막대의 성장방법 |
| US20240191391A1 (en) * | 2021-04-16 | 2024-06-13 | Kyocera Corporation | SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GaN-BASED CRYSTAL BODY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
| JP2023094009A (ja) * | 2021-12-23 | 2023-07-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、およびディスプレイ |
| CN115842077B (zh) * | 2023-02-10 | 2023-04-28 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制备方法、发光二极管 |
| US12446385B2 (en) | 2023-11-03 | 2025-10-14 | Snap Inc. | Monolithic RGB microLED array |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6046465A (en) * | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
| JP4613373B2 (ja) * | 1999-07-19 | 2011-01-19 | ソニー株式会社 | Iii族ナイトライド化合物半導体薄膜の形成方法および半導体素子の製造方法 |
| US6599564B1 (en) * | 2000-08-09 | 2003-07-29 | The Board Of Trustees Of The University Of Illinois | Substrate independent distributed bragg reflector and formation method |
| US6649287B2 (en) | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
| US6523188B1 (en) | 2002-01-14 | 2003-02-25 | Kiefer Pool Equipment Co. | Top for starting platform for swimming pool |
| US7335908B2 (en) | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| US6818061B2 (en) | 2003-04-10 | 2004-11-16 | Honeywell International, Inc. | Method for growing single crystal GaN on silicon |
| JP3821232B2 (ja) | 2003-04-15 | 2006-09-13 | 日立電線株式会社 | エピタキシャル成長用多孔質基板およびその製造方法ならびにiii族窒化物半導体基板の製造方法 |
| JP2006237556A (ja) * | 2005-01-31 | 2006-09-07 | Kanagawa Acad Of Sci & Technol | GaN膜生成方法及び半導体素子並びにIII族窒化物の薄膜生成方法及びIII族窒化物の薄膜を有する半導体素子 |
| US7365374B2 (en) | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
| JP2008544567A (ja) | 2005-06-27 | 2008-12-04 | ソウル オプト デバイス カンパニー リミテッド | 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド |
| KR100753152B1 (ko) * | 2005-08-12 | 2007-08-30 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
| CN101882656B (zh) * | 2005-10-29 | 2014-03-12 | 三星显示有限公司 | 半导体器件及其制造方法 |
| US20070257264A1 (en) | 2005-11-10 | 2007-11-08 | Hersee Stephen D | CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS |
| TWI519686B (zh) * | 2005-12-15 | 2016-02-01 | 聖戈班晶體探測器公司 | 低差排密度氮化鎵(GaN)之生長方法 |
| EP3731283A1 (de) * | 2006-02-23 | 2020-10-28 | AZUR SPACE Solar Power GmbH | Nitridhalbleiterprodukt |
| JP5483887B2 (ja) | 2006-03-08 | 2014-05-07 | クナノ アーベー | Si上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
| CA2643439C (en) | 2006-03-10 | 2015-09-08 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
| CN101681813B (zh) | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| GB0702560D0 (en) | 2007-02-09 | 2007-03-21 | Univ Bath | Production of Semiconductor devices |
| CA2745269A1 (en) * | 2008-01-28 | 2009-08-06 | Amit Goyal | [100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
| KR101515100B1 (ko) * | 2008-10-21 | 2015-04-24 | 삼성전자주식회사 | 발광 다이오드 및 그 제조 방법 |
| US8097999B2 (en) * | 2009-04-27 | 2012-01-17 | University Of Seoul Industry Cooperation Foundation | Piezoelectric actuator |
-
2011
- 2011-06-27 EP EP11798484.9A patent/EP2586062A4/en not_active Withdrawn
- 2011-06-27 US US13/805,273 patent/US9947829B2/en active Active
- 2011-06-27 CN CN2011800310888A patent/CN103098216A/zh active Pending
- 2011-06-27 AU AU2011269874A patent/AU2011269874B2/en not_active Ceased
- 2011-06-27 SG SG2012091344A patent/SG186312A1/en unknown
- 2011-06-27 CA CA2802500A patent/CA2802500A1/en not_active Abandoned
- 2011-06-27 JP JP2013516546A patent/JP5981426B2/ja active Active
- 2011-06-27 KR KR1020127034303A patent/KR20130138657A/ko not_active Withdrawn
- 2011-06-27 WO PCT/SE2011/050845 patent/WO2011162715A1/en not_active Ceased
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013532621A5 (enExample) | ||
| JP5981426B2 (ja) | 配向されたナノワイヤー成長用のバッファ層を有する基板 | |
| US7999272B2 (en) | Semiconductor light emitting device having patterned substrate | |
| US9748094B2 (en) | Semiconductor compound structure and method of fabricating the same using graphene or carbon nanotubes, and semiconductor device including the semiconductor compound structure | |
| JP5740309B2 (ja) | 放射放出薄膜部品の製造方法および放射放出薄膜部品 | |
| US8952243B2 (en) | Stacked structure including vertically grown semiconductor, p-n junction device including the stacked structure, and method of manufacturing thereof | |
| AU2019204449A1 (en) | Process for growing nanowires or nanopyramids on graphitic substrates | |
| JP2012507840A5 (enExample) | ||
| TWI304278B (en) | Semiconductor emitting device substrate and method of fabricating the same | |
| CN105917444A (zh) | 半导体器件及制造方法 | |
| TW201342472A (zh) | 半導體元件及其製造方法 | |
| CN106229394A (zh) | 微发光二极管及其制造方法和显示器 | |
| US20140377507A1 (en) | Composite Substrate Used For GaN Growth | |
| JP2013084832A (ja) | 窒化物半導体構造の製造方法 | |
| JP2005011944A (ja) | 発光装置 | |
| CN105826438B (zh) | 一种具有金属缓冲层的发光二极管及其制备方法 | |
| CN107078033B (zh) | 氮化物半导体模板的制造方法 | |
| CN104637788A (zh) | Iii族氮化物微观图形结构的选区生长方法及结构 | |
| TWI443864B (zh) | Fabrication of crystalline structure | |
| JP2015509657A (ja) | 可撓性のナノワイヤをベースにした太陽電池 | |
| KR101273459B1 (ko) | MOCVD 를 이용하여 고품질 epitaxial layer 형성을 위한 4-step NWELOG 성장 방법 | |
| WO2011152799A1 (en) | Method of forming epitaxial zinc oxide films | |
| JP2020132441A (ja) | 窒化アルミニウム積層部材および窒化アルミニウム層 | |
| TWI334654B (en) | Solid-state light-emitting device and method for producing the same | |
| TW200826158A (en) | Epitaxy method and continuous epitaxial substrate formed with islands thereon |