JP2013530914A - 高強度ダイアモンド−SiC圧密体及びその製造方法 - Google Patents
高強度ダイアモンド−SiC圧密体及びその製造方法 Download PDFInfo
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Abstract
Description
本開示は低レベルの未反応ケイ素及びグラファイトを有するダイアモンド圧密体の製造方法(プロセス及びメソッド)を提供する。本開示は、さらに、本開示中に開示される新規の方法により製造されるダイアモンド圧密体、ならびに、その新規の方法により製造されるダイアモンド圧密体を用いた工具を含む。
ダイアモンド圧密体は、しばしば、互いに接触点で結合したダイアモンド粒を約85体積%以上の量で含む。これらの圧密体(以下において、多結晶ダイアモンド又はPCDと呼ぶ)は、また、最も頻繁には、Co又はFeなどの触媒金属を約15体積%以下の量で含む。これらのダイアモンド圧密体は、しばしば、WC基材に取り付けられた、又は、完全な自立体として、0.5〜5mmの厚さの層として形成される。これらのダイアモンド圧密体を形成するには、55kBarを超える操作圧力が要求される。
本開示は約1質量%未満の残留グラファイトを有しそして約2質量%未満の未反応Siを有するSiC結合ダイアモンド圧密体及びそのダイアモンド圧密体の調製方法を記載する。
上記の要旨、及び、下記の実施形態の詳細な説明は添付の図面と組み合わせて読んだときに、よりよく理解されるであろう。例示の目的で、図面に種々の実施形態を示す。しかしながら、示された実施形態は示された正確な配置及び手段に限定されないことは理解されるべきである。
SiC結合ダイアモンド圧密体の調製のための従来の方法は約5分を超える反応時間では約1600℃以下の反応温度を要求し、約1600℃を超える反応温度では約5分未満の反応時間を要求した。これらのサイクル時間及び温度の必要性は出発材料中のダイアモンド材料のグラファイト化を最少化し、また、Siのより完全な利用を確保するという選好により支配されていた。本開示は、従来には報告されていないサイクル時間、温度及びSi粒子サイズを用いて、SiC結合ダイアモンド圧密体中にケイ素含有分及びグラファイト含有分の両方を最少化する方法を提供する。
Claims (36)
- 炭化ケイ素(SiC)結合ダイアモンド圧密体の調製方法であって、
ダイアモンド、ケイ素(Si)及び、場合により、Si3N4、AlN、hBN及びそれらの組み合わせからなる群より選ばれる少なくとも1つの成分を含む混合物を焼結することを含み、
該焼結は約10〜約80Kbarの圧力で、約1600℃〜約1800℃の温度で行い、そして該焼結は少なくとも約10分間行う、方法。 - 前記混合物は前記焼結の間に充実物としての又は粉末化したSiの集団に隣接している、請求項1記載の方法。
- 前記混合物は前記焼結の間に液体Siと連通している、請求項1記載の方法。
- 前記混合物はTi、Hf、Nb、Zr、Ta、W、Mo、V、U、Th、Sc、Be、Re、Rh、Ru、Ir、Os、Pt及びそれらの組み合わせからなる群より選ばれる元素をさらに含む、請求項1〜3のいずれか1項記載の方法。
- 前記充実物としての又は粉末化したSiの集団はTi、Hf、Nb、Zr、Ta、W、Mo、V、U、Th、Sc、Be、Re、Rh、Ru、Ir、Os、Pt及びそれらの組み合わせからなる群より選ばれる元素をさらに含む、請求項2記載の方法。
- Siはd95が約30ミクロン未満である、先行の請求項のいずれか1項記載の方法。
- 前記温度は約1690℃である、先行の請求項のいずれか1項記載の方法。
- 先行の請求項のいずれか1項記載の方法により調製されるSiC結合ダイアモンド圧密体であって、約2質量%未満の未反応Si含有分及び約1質量%未満のグラファイト含有分を有する、SiC結合ダイアモンド圧密体。
- 前記圧密体の強度は少なくとも約700MPaである、請求項8記載のSiC結合ダイアモンド圧密体。
- 前記未反応Si含有分は約1.5質量%未満である、請求項8又は9記載のSiC結合ダイアモンド圧密体。
- 前記未反応Si含有分は約1質量%未満である、請求項8又は9記載のSiC結合ダイアモンド圧密体。
- 前記グラファイト含有分は約0.1質量%未満である、請求項8〜11のいずれか1項記載のSiC結合ダイアモンド圧密体。
- 前記温度は約1690℃である、請求項8〜12のいずれか1項記載のSiC結合ダイアモンド圧密体。
- ダイアモンド、ケイ素(Si)及び、場合により、Si3N4、AlN、hBN及びそれらの組み合わせからなる群より選ばれる少なくとも1つの成分を含む混合物を焼結することを含む、炭化ケイ素(SiC)結合ダイアモンド圧密体の調製方法であって、
該焼結は約10〜約80Kbarの圧力で、約1400℃〜約1600℃の温度で行い、そしてSiのd95は約30μm未満である、方法。 - 前記混合物は前記焼結の間に充実物としての又は粉末化したSiの集団と接触している、請求項13記載の方法。
- 前記混合物は前記焼結の間に液体Siと連通している、請求項13記載の方法。
- 前記混合物はTi、Hf、Nb、Zr、Ta、W、Mo、V、U、Th、Sc、Be、Re、Rh、Ru、Ir、Os、Pt及びそれらの組み合わせからなる群より選ばれる元素をさらに含む、請求項14及び15のいずれか1項記載の方法。
- 前記充実物としての又は粉末化したSiの集団はTi、Hf、Nb、Zr、Ta、W、Mo、V、U、Th、Sc、Be、Re、Rh、Ru、Ir、Os、Pt及びそれらの組み合わせからなる群より選ばれる元素をさらに含む、請求項14及び15のいずれか1項記載の方法。
- Siのd95は約10μm未満である、請求項14及び15のいずれか1項記載の方法。
- Siのd95は約7.5μmである、請求項18記載の方法。
- 前記温度は約1600℃である、請求項14〜19のいずれか1項記載の方法。
- 請求項14記載の方法により調製されるSiC結合ダイアモンド圧密体であって、
約2質量%未満の未反応Si含有分及び約1質量%未満のグラファイト含有分を有する、SiC結合ダイアモンド圧密体。 - 前記圧密体の強度は少なくとも約700MPaである、請求項22記載のSiC結合ダイアモンド圧密体。
- 前記未反応Si含有分は約1.5質量%未満である、請求項22及び23のいずれか1項記載のSiC結合ダイアモンド圧密体。
- 前記未反応Si含有分は約1質量%未満である、請求項24記載のSiC結合ダイアモンド圧密体。
- 前記グラファイト含有分は約0.1質量%未満である、請求項22記載のSiC結合ダイアモンド圧密体。
- 前記強度は少なくとも約800MPaである、請求項22記載のSiC結合ダイアモンド圧密体。
- 約60〜約95質量%のダイアモンド、約10〜約40質量%のSiC、約2質量%未満の未反応Si及び約1質量%未満のグラファイトを含む、SiC結合ダイアモンド圧密体。
- 前記ダイアモンドは圧密体の約81〜約82質量%を構成し、前記SiCは圧密体の約17〜約18質量%を構成し、前記未反応Siは圧密体の約1.5質量%未満を構成する、請求項28記載のSiC結合ダイアモンド圧密体。
- 前記未反応Siは前記SiC結合ダイアモンド圧密体の約0.9質量%未満を構成する、請求項29記載のSiC結合ダイアモンド圧密体。
- 前記グラファイトは約0.1質量%未満である、請求項28記載のSiC結合ダイアモンド圧密体。
- 前記圧密体の強度は少なくとも約700MPaである、請求項28〜31のいずれか1項記載のSiC結合ダイアモンド圧密体。
- 前記未反応Si含有分は約1.1質量%未満である、請求項26及び27のいずれか1項記載のSiC結合ダイアモンド圧密体。
- 前記グラファイト含有分は約0.1質量%未満である、請求項26記載のSiC結合ダイアモンド圧密体。
- 例1に関して本明細書中に記載されるとおりの請求項14記載のSiC結合ダイアモンド圧密体。
- 例1に関して本明細書中に記載されるとおりの請求項14記載のSiC結合ダイアモンド圧密体の調製方法。
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JP2021517546A (ja) * | 2018-03-14 | 2021-07-26 | フラウンホーファー−ゲゼルシャフト ツゥア フェアデルング デア アンゲヴァンドテン フォァシュング エー.ファウ. | SiC結合ダイヤモンド硬質材料粒子、SiC結合ダイヤモンド粒子で形成された多孔質成形品、その製造方法及びその使用 |
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CN103949187B (zh) * | 2014-05-14 | 2016-03-30 | 河南飞孟金刚石工业有限公司 | 一种粗颗粒多晶金刚石合成工艺 |
WO2021076923A1 (en) * | 2019-10-16 | 2021-04-22 | Diamond Innovations, Inc. | Bearing assembly |
CN111730054B (zh) * | 2020-06-30 | 2021-09-24 | 湖南大学 | 一种碳化硅包覆金刚石复合粉末的低温合成方法及应用 |
RU2759858C1 (ru) * | 2020-12-25 | 2021-11-18 | Государственное Научное Учреждение Институт Порошковой Металлургии Имени Академика О.В. Романа | Способ получения износостойкого композиционного материала на основе карбида кремния |
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