JP2013528251A - ガス混合防止用大面積蒸着装置 - Google Patents
ガス混合防止用大面積蒸着装置 Download PDFInfo
- Publication number
- JP2013528251A JP2013528251A JP2013512541A JP2013512541A JP2013528251A JP 2013528251 A JP2013528251 A JP 2013528251A JP 2013512541 A JP2013512541 A JP 2013512541A JP 2013512541 A JP2013512541 A JP 2013512541A JP 2013528251 A JP2013528251 A JP 2013528251A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chamber
- gas mixing
- deposition apparatus
- area vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007740 vapor deposition Methods 0.000 title claims abstract description 43
- 230000002265 prevention Effects 0.000 title claims description 14
- 238000002347 injection Methods 0.000 claims abstract description 81
- 239000007924 injection Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000007921 spray Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 83
- 238000000151 deposition Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 14
- 230000033001 locomotion Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 230000003139 buffering effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- -1 density Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100050421A KR101120039B1 (ko) | 2010-05-28 | 2010-05-28 | 가스 혼합 방지용 대면적 증착장치 |
| KR10-2010-0050421 | 2010-05-28 | ||
| PCT/KR2011/003855 WO2011149278A2 (ko) | 2010-05-28 | 2011-05-26 | 가스혼합 방지용 대면적 증착장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2013528251A true JP2013528251A (ja) | 2013-07-08 |
Family
ID=45004573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013512541A Withdrawn JP2013528251A (ja) | 2010-05-28 | 2011-05-26 | ガス混合防止用大面積蒸着装置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2013528251A (ko) |
| KR (1) | KR101120039B1 (ko) |
| CN (1) | CN102906861A (ko) |
| TW (1) | TW201213598A (ko) |
| WO (1) | WO2011149278A2 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104195528A (zh) * | 2014-09-05 | 2014-12-10 | 厦门大学 | 一种耦合高频振动的微型等离子增强化学气相沉积装置 |
| CN106048561B (zh) * | 2016-08-17 | 2019-02-12 | 武汉华星光电技术有限公司 | 一种原子层沉积装置及方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3856483T2 (de) * | 1987-03-18 | 2002-04-18 | Kabushiki Kaisha Toshiba, Kawasaki | Verfahren zur Herstellung von Dünnschichten |
| FI972874A0 (fi) * | 1997-07-04 | 1997-07-04 | Mikrokemia Oy | Foerfarande och anordning foer framstaellning av tunnfilmer |
| KR20060075564A (ko) * | 2004-12-28 | 2006-07-04 | 동부일렉트로닉스 주식회사 | 가스 분사 인젝터 |
| KR100919661B1 (ko) * | 2007-08-24 | 2009-09-30 | 주식회사 테라세미콘 | 반도체 제조 장치 |
-
2010
- 2010-05-28 KR KR1020100050421A patent/KR101120039B1/ko active IP Right Grant
-
2011
- 2011-05-26 WO PCT/KR2011/003855 patent/WO2011149278A2/ko active Application Filing
- 2011-05-26 CN CN201180025477.XA patent/CN102906861A/zh active Pending
- 2011-05-26 JP JP2013512541A patent/JP2013528251A/ja not_active Withdrawn
- 2011-05-27 TW TW100118643A patent/TW201213598A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011149278A3 (ko) | 2012-03-01 |
| CN102906861A (zh) | 2013-01-30 |
| KR101120039B1 (ko) | 2012-03-22 |
| WO2011149278A2 (ko) | 2011-12-01 |
| TW201213598A (en) | 2012-04-01 |
| KR20110130877A (ko) | 2011-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20140805 |