JP2013525977A - シラボランの注入プロセス - Google Patents

シラボランの注入プロセス Download PDF

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Publication number
JP2013525977A
JP2013525977A JP2013506137A JP2013506137A JP2013525977A JP 2013525977 A JP2013525977 A JP 2013525977A JP 2013506137 A JP2013506137 A JP 2013506137A JP 2013506137 A JP2013506137 A JP 2013506137A JP 2013525977 A JP2013525977 A JP 2013525977A
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JP
Japan
Prior art keywords
silaborane
molecule
ion source
ion
ionized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013506137A
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English (en)
Japanese (ja)
Inventor
リー，ウィリアム，ディー．
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2013525977A publication Critical patent/JP2013525977A/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Tubes For Measurement (AREA)
JP2013506137A 2010-04-21 2011-04-21 シラボランの注入プロセス Withdrawn JP2013525977A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/764,540 US8344337B2 (en) 2010-04-21 2010-04-21 Silaborane implantation processes
US12/764,540 2010-04-21
PCT/US2011/000717 WO2011133223A1 (en) 2010-04-21 2011-04-21 Silaborane implantation processes

Publications (1)

Publication Number Publication Date
JP2013525977A true JP2013525977A (ja) 2013-06-20

Family

ID=44064624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013506137A Withdrawn JP2013525977A (ja) 2010-04-21 2011-04-21 シラボランの注入プロセス

Country Status (5)

Country Link
US (1) US8344337B2 (zh)
JP (1) JP2013525977A (zh)
KR (1) KR101838578B1 (zh)
CN (1) CN102844842B (zh)
WO (1) WO2011133223A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020515057A (ja) * 2017-03-15 2020-05-21 セミニュークリア, インコーポレイテッドSeminuclear, Inc. 自己熱化及び自己局在化の両方をサポートする低次元物質のプロセス及び製造

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8941968B2 (en) 2010-06-08 2015-01-27 Axcelis Technologies, Inc. Heated electrostatic chuck including mechanical clamp capability at high temperature
JP5793456B2 (ja) * 2012-03-23 2015-10-14 株式会社東芝 半導体装置およびその製造方法、基板
US9490185B2 (en) * 2012-08-31 2016-11-08 Axcelis Technologies, Inc. Implant-induced damage control in ion implantation
US20140106550A1 (en) * 2012-10-11 2014-04-17 International Business Machines Corporation Ion implantation tuning to achieve simultaneous multiple implant energies
US9721760B2 (en) 2013-05-16 2017-08-01 Applied Materials, Inc. Electron beam plasma source with reduced metal contamination
US9564297B2 (en) * 2013-05-16 2017-02-07 Applied Materials, Inc. Electron beam plasma source with remote radical source
US9343312B2 (en) * 2014-07-25 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. High temperature intermittent ion implantation
US20160351286A1 (en) * 2015-05-28 2016-12-01 SemiNuclear, Inc. Composition and method for making picocrystalline artificial carbon atoms
US9972489B2 (en) * 2015-05-28 2018-05-15 SemiNuclear, Inc. Composition and method for making picocrystalline artificial borane atoms
US11651957B2 (en) 2015-05-28 2023-05-16 SemiNuclear, Inc. Process and manufacture of low-dimensional materials supporting both self-thermalization and self-localization
MX2019006275A (es) * 2016-11-29 2019-08-21 Seminuclear Inc Composicion y metodo para producir atomos artificiales de borano picocristalino.
CN107195522B (zh) * 2017-06-29 2021-04-30 上海集成电路研发中心有限公司 团簇离子注入的系统、大原子基团形成方法和超浅结制备方法
US11825590B2 (en) * 2021-09-13 2023-11-21 Applied Materials, Inc. Drift tube, apparatus and ion implanter having variable focus electrode in linear accelerator

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
KR0158234B1 (ko) * 1992-03-02 1999-02-18 이노우에 아키라 이온 주입 시스템
JPH06216060A (ja) * 1993-01-12 1994-08-05 Tokyo Electron Ltd 真空処理方法
US5661308A (en) 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US5852345A (en) * 1996-11-01 1998-12-22 Implant Sciences Corp. Ion source generator auxiliary device for phosphorus and arsenic beams
JP3749924B2 (ja) 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
US5898178A (en) * 1997-07-02 1999-04-27 Implant Sciences Corporation Ion source for generation of radioactive ion beams
US6107634A (en) 1998-04-30 2000-08-22 Eaton Corporation Decaborane vaporizer
US6432256B1 (en) * 1999-02-25 2002-08-13 Applied Materials, Inc. Implanatation process for improving ceramic resistance to corrosion
US6525224B1 (en) 1999-06-08 2003-02-25 Northern Illinois University Fused polyhedron borane dianion
US20050208218A1 (en) * 1999-08-21 2005-09-22 Ibadex Llc. Method for depositing boron-rich coatings
US6288403B1 (en) 1999-10-11 2001-09-11 Axcelis Technologies, Inc. Decaborane ionizer
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
JP4820038B2 (ja) 1999-12-13 2011-11-24 セメクイップ， インコーポレイテッド イオン注入イオン源、システム、および方法
US6479828B2 (en) * 2000-12-15 2002-11-12 Axcelis Tech Inc Method and system for icosaborane implantation
KR100703121B1 (ko) 2002-06-26 2007-04-05 세미이큅, 인코포레이티드 이온 주입 방법
US20060145095A1 (en) * 2004-12-30 2006-07-06 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion implantation with control of incidence angle by beam deflection
KR100683401B1 (ko) * 2005-08-11 2007-02-15 동부일렉트로닉스 주식회사 에피층을 이용한 반도체 장치 및 그 제조방법
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US20070178678A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
US20070178679A1 (en) 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same
KR100694660B1 (ko) * 2006-03-08 2007-03-13 삼성전자주식회사 트랜지스터 및 그 제조 방법
KR20090029209A (ko) * 2006-06-13 2009-03-20 세미이큅, 인코포레이티드 이온 주입을 위한 이온 빔 장치 및 방법
US7842278B2 (en) * 2006-10-27 2010-11-30 Natural Pharmacia International, Inc. Hypoxia-selective, weakly basic 2-nitroimidazole delivery agents and methods of use thereof
US20080105828A1 (en) * 2006-11-08 2008-05-08 Varian Semiconductor Equipment Associates, Inc. Techniques for removing molecular fragments from an ion implanter
US7759657B2 (en) * 2008-06-19 2010-07-20 Axcelis Technologies, Inc. Methods for implanting B22Hx and its ionized lower mass byproducts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020515057A (ja) * 2017-03-15 2020-05-21 セミニュークリア, インコーポレイテッドSeminuclear, Inc. 自己熱化及び自己局在化の両方をサポートする低次元物質のプロセス及び製造
JP7250340B2 (ja) 2017-03-15 2023-04-03 セミニュークリア，インコーポレイテッド 自己熱化及び自己局在化の両方をサポートする低次元物質のプロセス及び製造

Also Published As

Publication number Publication date
CN102844842B (zh) 2016-01-27
KR20130065660A (ko) 2013-06-19
CN102844842A (zh) 2012-12-26
WO2011133223A1 (en) 2011-10-27
US8344337B2 (en) 2013-01-01
KR101838578B1 (ko) 2018-03-14
US20110260047A1 (en) 2011-10-27

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Effective date: 20140701