JP2013516767A5 - - Google Patents
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- Publication number
- JP2013516767A5 JP2013516767A5 JP2012547160A JP2012547160A JP2013516767A5 JP 2013516767 A5 JP2013516767 A5 JP 2013516767A5 JP 2012547160 A JP2012547160 A JP 2012547160A JP 2012547160 A JP2012547160 A JP 2012547160A JP 2013516767 A5 JP2013516767 A5 JP 2013516767A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- silicon
- implanted
- ions
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 74
- 150000002500 ions Chemical class 0.000 claims description 53
- 238000002513 implantation Methods 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 29
- 239000012212 insulator Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000001307 helium Substances 0.000 claims description 14
- 229910052734 helium Inorganic materials 0.000 claims description 14
- 238000000137 annealing Methods 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 230000032798 delamination Effects 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- 239000007943 implant Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- -1 helium ions Chemical class 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 230000005660 hydrophilic surface Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29096109P | 2009-12-30 | 2009-12-30 | |
| US61/290,961 | 2009-12-30 | ||
| PCT/US2010/061858 WO2011082079A1 (en) | 2009-12-30 | 2010-12-22 | Method for the preparation of a multi-layered crystalline structure |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013116607A Division JP2013175787A (ja) | 2009-12-30 | 2013-06-03 | 多層結晶構造体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013516767A JP2013516767A (ja) | 2013-05-13 |
| JP2013516767A5 true JP2013516767A5 (OSRAM) | 2013-07-18 |
| JP5591949B2 JP5591949B2 (ja) | 2014-09-17 |
Family
ID=43587555
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012547160A Active JP5591949B2 (ja) | 2009-12-30 | 2010-12-22 | 多層結晶構造体の製造方法 |
| JP2013116607A Pending JP2013175787A (ja) | 2009-12-30 | 2013-06-03 | 多層結晶構造体の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013116607A Pending JP2013175787A (ja) | 2009-12-30 | 2013-06-03 | 多層結晶構造体の製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8367519B2 (OSRAM) |
| EP (2) | EP2519965B1 (OSRAM) |
| JP (2) | JP5591949B2 (OSRAM) |
| KR (1) | KR20120117843A (OSRAM) |
| CN (1) | CN103026460A (OSRAM) |
| SG (1) | SG181986A1 (OSRAM) |
| TW (2) | TWI430339B (OSRAM) |
| WO (1) | WO2011082079A1 (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8853054B2 (en) | 2012-03-06 | 2014-10-07 | Sunedison Semiconductor Limited | Method of manufacturing silicon-on-insulator wafers |
| US8796054B2 (en) * | 2012-05-31 | 2014-08-05 | Corning Incorporated | Gallium nitride to silicon direct wafer bonding |
| JP6024400B2 (ja) | 2012-11-07 | 2016-11-16 | ソニー株式会社 | 半導体装置、半導体装置の製造方法、及びアンテナスイッチモジュール |
| US9281233B2 (en) * | 2012-12-28 | 2016-03-08 | Sunedison Semiconductor Limited | Method for low temperature layer transfer in the preparation of multilayer semiconductor devices |
| TWI509681B (zh) * | 2013-11-15 | 2015-11-21 | All Ring Tech Co Ltd | Method and apparatus for processing on wafers |
| US9496128B1 (en) | 2015-10-15 | 2016-11-15 | International Business Machines Corporation | Controlled spalling utilizing vaporizable release layers |
| JP7160943B2 (ja) | 2018-04-27 | 2022-10-25 | グローバルウェーハズ カンパニー リミテッド | 半導体ドナー基板からの層移転を容易にする光アシスト板状体形成 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033974A (en) | 1997-05-12 | 2000-03-07 | Silicon Genesis Corporation | Method for controlled cleaving process |
| JPH11145438A (ja) * | 1997-11-13 | 1999-05-28 | Shin Etsu Handotai Co Ltd | Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ |
| FR2773261B1 (fr) * | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
| US7076042B1 (en) | 2000-09-06 | 2006-07-11 | Cisco Technology, Inc. | Processing a subscriber call in a telecommunications network |
| FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
| FR2819099B1 (fr) | 2000-12-28 | 2003-09-26 | Commissariat Energie Atomique | Procede de realisation d'une structure empilee |
| US6686630B2 (en) * | 2001-02-07 | 2004-02-03 | International Business Machines Corporation | Damascene double-gate MOSFET structure and its fabrication method |
| WO2002084728A1 (en) | 2001-04-11 | 2002-10-24 | Memc Electronic Materials, Inc. | Control of thermal donor formation in high resistivity cz silicon |
| JP2004533125A (ja) | 2001-06-22 | 2004-10-28 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | イオン注入によるイントリンシックゲッタリングを有するシリコン・オン・インシュレータ構造体を製造する方法 |
| US7084046B2 (en) * | 2001-11-29 | 2006-08-01 | Shin-Etsu Handotai Co., Ltd. | Method of fabricating SOI wafer |
| US20040224482A1 (en) * | 2001-12-20 | 2004-11-11 | Kub Francis J. | Method for transferring thin film layer material to a flexible substrate using a hydrogen ion splitting technique |
| US6833322B2 (en) | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
| WO2004061944A1 (en) | 2003-01-07 | 2004-07-22 | S.O.I.Tec Silicon On Insulator Technologies | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer |
| US6911375B2 (en) * | 2003-06-02 | 2005-06-28 | International Business Machines Corporation | Method of fabricating silicon devices on sapphire with wafer bonding at low temperature |
| JP4407384B2 (ja) * | 2004-05-28 | 2010-02-03 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板の製造方法 |
| FR2876841B1 (fr) * | 2004-10-19 | 2007-04-13 | Commissariat Energie Atomique | Procede de realisation de multicouches sur un substrat |
| DE102004054564B4 (de) * | 2004-11-11 | 2008-11-27 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
| US10374120B2 (en) * | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
| US20070117350A1 (en) | 2005-08-03 | 2007-05-24 | Memc Electronic Materials, Inc. | Strained silicon on insulator (ssoi) with layer transfer from oxidized donor |
| FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
| EP1763069B1 (en) | 2005-09-07 | 2016-04-13 | Soitec | Method for forming a semiconductor heterostructure |
| US7608521B2 (en) * | 2006-05-31 | 2009-10-27 | Corning Incorporated | Producing SOI structure using high-purity ion shower |
| FR2906078B1 (fr) * | 2006-09-19 | 2009-02-13 | Commissariat Energie Atomique | Procede de fabrication d'une structure micro-technologique mixte et une structure ainsi obtenue |
| FR2913528B1 (fr) * | 2007-03-06 | 2009-07-03 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat comportant une couche d'oxyde enterree pour la realisation de composants electroniques ou analogues. |
| FR2917235B1 (fr) * | 2007-06-06 | 2010-09-03 | Soitec Silicon On Insulator | Procede de realisation de composants hybrides. |
| JP5386856B2 (ja) * | 2008-06-03 | 2014-01-15 | 株式会社Ｓｕｍｃｏ | 貼り合わせウェーハの製造方法 |
| SG159484A1 (en) * | 2008-09-05 | 2010-03-30 | Semiconductor Energy Lab | Method of manufacturing soi substrate |
| JP5364345B2 (ja) * | 2008-11-12 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| US8679942B2 (en) * | 2008-11-26 | 2014-03-25 | Soitec | Strain engineered composite semiconductor substrates and methods of forming same |
| US20100216295A1 (en) * | 2009-02-24 | 2010-08-26 | Alex Usenko | Semiconductor on insulator made using improved defect healing process |
| US8198172B2 (en) * | 2009-02-25 | 2012-06-12 | Micron Technology, Inc. | Methods of forming integrated circuits using donor and acceptor substrates |
-
2010
- 2010-12-21 US US12/974,772 patent/US8367519B2/en active Active
- 2010-12-22 SG SG2012048385A patent/SG181986A1/en unknown
- 2010-12-22 EP EP10801778.1A patent/EP2519965B1/en active Active
- 2010-12-22 JP JP2012547160A patent/JP5591949B2/ja active Active
- 2010-12-22 EP EP14154849.5A patent/EP2733735A3/en not_active Withdrawn
- 2010-12-22 KR KR1020127019987A patent/KR20120117843A/ko not_active Withdrawn
- 2010-12-22 WO PCT/US2010/061858 patent/WO2011082079A1/en not_active Ceased
- 2010-12-22 CN CN201080064913XA patent/CN103026460A/zh active Pending
- 2010-12-29 TW TW099146704A patent/TWI430339B/zh active
- 2010-12-29 TW TW102110416A patent/TW201330062A/zh unknown
-
2012
- 2012-12-28 US US13/730,011 patent/US20130137241A1/en not_active Abandoned
-
2013
- 2013-06-03 JP JP2013116607A patent/JP2013175787A/ja active Pending
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