JP2013511838A5 - - Google Patents

Claims (15)

a) doping a first surface of a semiconductor substrate with n dopants to form a first n ⁺ layer on the substrate;
b) doping the second surface of the substrate with p-dopant to form a p ⁺ layer on the substrate;
c) removing a portion of the first n ⁺ layer from the first surface of the substrate such that the concentration of the n dopant remaining on the first surface of the substrate is unequal across the first surface. However, the removal includes texturing the first surface to create peaks and valleys on the first surface, and the concentration of the n dopant remaining on the first surface after texturing is greater than the trough. The mountain is higher,
d) forming the second n ⁺ layer by doping the first surface of the substrate with the n dopant so that the concentration of the n dopant in the second n ⁺ layer is unequal across the first surface. However, the concentration of the n dopant in the second n ⁺ layer is higher in the crest than in the valley, and the concentration of the n dopant in the crest is a high concentration local region in which the n dopant is randomly distributed Represents
e) A method of manufacturing a photovoltaic cell, comprising forming electrical contacts on each of the first surface and the second surface, thereby manufacturing the photovoltaic cell. The first n ⁺ layer and the p ⁺ layer are formed simultaneously, doping the n dopant to form the first n ⁺ layer, and doping the p dopant to form the p ⁺ layer,
(I) depositing a film containing the p-dopant on the second surface;
(Ii) depositing a film comprising the n-dopant on the first surface; and (iii) heating the substrate, thereby simultaneously forming the first n ⁺ layer and the p ⁺ layer. The method according to claim 1. The first n ⁺ layer and the p ⁺ layer are formed simultaneously, doping the n dopant to form the first n ⁺ layer, and doping the p dopant to form the p ⁺ layer,
(I) depositing a film containing the p-dopant on the second surface of the semiconductor substrate;
(Ii) removing the film containing the p-dopant from the first surface of the substrate and an edge of the substrate;
(Iii) depositing a film containing the n dopant on the first surface; and (iv) heating the substrate to form the first n ⁺ layer and the p ⁺ layer simultaneously. The method according to claim 1. The method according to claim 1, wherein the first n ⁺ layer comprises a sheet resistance of less than 30 ohms. The method according to claim 1, wherein the first n ⁺ layer has a depth in the range of 0.4 to ² μm. 6. The removal according to claim 1, wherein removing the portion of the n ⁺ layer from the first surface comprises etching the first surface to an average depth in the range of 4 μm to 12 μm. Method. The method of claim 1, further comprising depositing an antireflective coating on the second surface after forming the p ⁺ layer and before forming the second n ⁺ layer.   A photovoltaic cell manufactured according to the method according to claim 1. A photovoltaic cell comprising a semiconductor substrate, the substrate comprising an n ⁺ layer on its first surface and a p ⁺ layer on its second surface, the n ⁺ layer comprising an n-dopant, ^{The +} layer includes a p-dopant, an electrical contact is attached to each of the first surface and the second surface, the first surface is textured to include peaks and valleys, and the n ⁺ layer The concentration of n dopant is higher in the crest of the first surface than the valley of the first surface, and the concentration of the n dopant in the crest is a high concentration local region in which the n dopant is randomly distributed. A photovoltaic cell representing The photovoltaic cell according to claim 9, wherein the p ⁺ layer and the n ⁺ layer do not contact each other and the p ⁺ layer does not reach an edge of the second surface.   The photovoltaic cell according to claim 9 or 10, wherein the concentration of the n dopant in the peak is at least twice the concentration of the n dopant in the valley.   The photovoltaic cell according to any one of claims 8 to 11, which is a double-sided photovoltaic cell.   A photovoltaic array comprising a plurality of photovoltaic cells according to any one of claims 8 to 12, wherein the plurality of photovoltaic cells are interconnected with each other.   A power plant comprising the photovoltaic array according to claim 13.   An electric device comprising the photovoltaic cell according to any one of claims 8 to 12.