JP2013508889A - 加熱素子のナノはんだ付け - Google Patents
加熱素子のナノはんだ付け Download PDFInfo
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- JP2013508889A JP2013508889A JP2012534102A JP2012534102A JP2013508889A JP 2013508889 A JP2013508889 A JP 2013508889A JP 2012534102 A JP2012534102 A JP 2012534102A JP 2012534102 A JP2012534102 A JP 2012534102A JP 2013508889 A JP2013508889 A JP 2013508889A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 59
- 238000005476 soldering Methods 0.000 title description 4
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000004020 conductor Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 27
- 229910021389 graphene Inorganic materials 0.000 claims description 20
- 239000002086 nanomaterial Substances 0.000 claims description 20
- 239000002238 carbon nanotube film Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000002041 carbon nanotube Substances 0.000 description 12
- 229910021393 carbon nanotube Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 6
- 239000002109 single walled nanotube Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 229920006254 polymer film Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/145—Carbon only, e.g. carbon black, graphite
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2214/00—Aspects relating to resistive heating, induction heating and heating using microwaves, covered by groups H05B3/00, H05B6/00
- H05B2214/04—Heating means manufactured by using nanotechnology
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- Carbon And Carbon Compounds (AREA)
- Resistance Heating (AREA)
Abstract
Description
Claims (20)
- 一連の連続的に接続された上面が画定されるように、少なくとも1つの壁が一部から延びる基板と、
前記上面に実質的に配置された導電層と
を含み、前記少なくとも1つの壁の最外部分が、その表面に、エッチングされた部分を有している加熱素子。 - 前記導電層が、少なくとも1つのグラフェンシートを含むように形成される、請求項1に記載の加熱素子。
- 前記導電層が、少なくとも1つのCNTフィルムを含むように形成される、請求項1に記載の加熱素子。
- 前記導電層上に実質的に配置された保護層をさらに含む、請求項1に記載の加熱素子。
- 前記保護層が、金属材料、金属化合物、および絶縁材料の少なくとも1種を含む、請求項4に記載の加熱素子。
- 前記少なくとも1つの壁が、前記基板に実質的に垂直に配設されている、請求項1に記載の加熱素子。
- 前記上面と前記導電層との間に実質的に配置された絶縁層をさらに含む、請求項1に記載の加熱素子。
- フェニル末端シランが、前記絶縁層の少なくとも一部に付着された、請求項7に記載の加熱素子。
- 前記少なくとも1つの壁が、数百ナノメートルの範囲内で測定される幅および高さを有する、請求項1に記載の加熱素子。
- 基板の一部から延びるように、かつ一連の連続的に接続された上面が画定されるように、前記基板上に少なくとも1つの壁を形成することと、
前記上面を、導電性材料でコーティングすることと、
前記少なくとも1つの壁の少なくとも一部をエッチングすることと
を含む、加熱素子を製作するための方法。 - 前記エッチングすることが、前記少なくとも1つの壁の最外部分で行われる、請求項10に記載の方法。
- 前記コーティングすることが、前記上面に少なくとも1つのCNTフィルムを配置することを含む、請求項10に記載の方法。
- 前記コーティングすることが、前記上面に少なくとも1つのグラフェンシートを配置することを含む、請求項10に記載の方法。
- 付着されたコーティングを有する前記上面に、保護層を付着させること
をさらに含む、請求項10に記載の方法。 - 前記保護層が、スパッタリングおよび気相成長法の1つによって、付着されたコーティングを有する前記上面に付着される、請求項14に記載の方法。
- 前記少なくとも1つの壁が、エッチング技法を使用することによって製作される、請求項10に記載の方法。
- 前記形成することが、
前記基板上にエッチングマスク層を配置することと、
前記エッチングマスク層上にフォトレジスト層を配置することと、
前記フォトレジスト層上にリソグラフィパターンを形成することと、
前記リソグラフィパターンを取り囲むフォトレジスト層の部分をエッチングすることと、
前記エッチングマスク層の少なくとも一部をエッチングすることと、
前記フォトレジスト層から前記リソグラフィパターンを除去することと、
前記基板の少なくとも一部をエッチングすることと、
前記基板から前記エッチングマスク層を除去することと
を含む、請求項16に記載の方法。 - 前記形成することが液化技法を含む、請求項10に記載の方法。
- 前記エッチングすることがプラズマエッチングによって実施される、請求項10に記載の方法。
- 前記形成することが、
前記基板上にナノ構造を位置付けることと、
前記ナノ構造の上方にプレートを配設することと、
前記ナノ構造をエッチングし液化することと、
冷却および除去プロセスを行うことと
を含む、請求項16に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/579,128 US8344295B2 (en) | 2009-10-14 | 2009-10-14 | Nanosoldering heating element |
US12/579,128 | 2009-10-14 | ||
PCT/KR2010/006898 WO2011046323A1 (en) | 2009-10-14 | 2010-10-08 | Nanosoldering heating element |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013508889A true JP2013508889A (ja) | 2013-03-07 |
JP5337309B2 JP5337309B2 (ja) | 2013-11-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2012534102A Expired - Fee Related JP5337309B2 (ja) | 2009-10-14 | 2010-10-08 | 加熱素子のナノはんだ付け |
Country Status (4)
Country | Link |
---|---|
US (1) | US8344295B2 (ja) |
JP (1) | JP5337309B2 (ja) |
KR (1) | KR101343014B1 (ja) |
WO (1) | WO2011046323A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9112002B2 (en) * | 2012-02-13 | 2015-08-18 | Tyco Electronics Corporation | Electrical conductors and methods of manufacturing electrical conductors |
US20140260545A1 (en) * | 2013-03-15 | 2014-09-18 | Infineon Technologies Ag | Sensor and sensing method |
US9583358B2 (en) | 2014-05-30 | 2017-02-28 | Samsung Electronics Co., Ltd. | Hardmask composition and method of forming pattern by using the hardmask composition |
KR102287343B1 (ko) | 2014-07-04 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
KR102287344B1 (ko) | 2014-07-25 | 2021-08-06 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
KR102384226B1 (ko) | 2015-03-24 | 2022-04-07 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴 형성방법 |
KR102463893B1 (ko) | 2015-04-03 | 2022-11-04 | 삼성전자주식회사 | 하드마스크 조성물 및 이를 이용한 패턴의 형성방법 |
US11034847B2 (en) | 2017-07-14 | 2021-06-15 | Samsung Electronics Co., Ltd. | Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition |
KR102433666B1 (ko) | 2017-07-27 | 2022-08-18 | 삼성전자주식회사 | 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
KR102486388B1 (ko) | 2017-07-28 | 2023-01-09 | 삼성전자주식회사 | 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072209A (ja) * | 2003-08-22 | 2005-03-17 | Fuji Xerox Co Ltd | 抵抗素子、その製造方法およびサーミスタ |
JP2009531864A (ja) * | 2006-03-31 | 2009-09-03 | インテル コーポレイション | インターコネクト用カーボンナノチューブはんだ組成物構造、当該はんだ組成物構造の作製方法、当該はんだ組成物構造を含むパッケージ、及び当該はんだ組成物構造を含むシステム |
US20090235915A1 (en) * | 2006-08-07 | 2009-09-24 | Doumanidis Charalabos C | Nanoheater elements, systems and methods of use thereof |
Family Cites Families (4)
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US7700498B2 (en) * | 2005-05-27 | 2010-04-20 | Princeton University | Self-repair and enhancement of nanostructures by liquification under guiding conditions |
AU2008326454A1 (en) * | 2007-11-19 | 2009-05-28 | Massachusetts Institute Of Technology | Adhesive articles |
KR100997796B1 (ko) * | 2008-12-16 | 2010-12-02 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US8366245B2 (en) * | 2008-12-29 | 2013-02-05 | Lexmark International, Inc. | Fin-shaped heater stack and method for formation |
-
2009
- 2009-10-14 US US12/579,128 patent/US8344295B2/en not_active Expired - Fee Related
-
2010
- 2010-10-08 JP JP2012534102A patent/JP5337309B2/ja not_active Expired - Fee Related
- 2010-10-08 WO PCT/KR2010/006898 patent/WO2011046323A1/en active Application Filing
- 2010-10-08 KR KR1020127012209A patent/KR101343014B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005072209A (ja) * | 2003-08-22 | 2005-03-17 | Fuji Xerox Co Ltd | 抵抗素子、その製造方法およびサーミスタ |
JP2009531864A (ja) * | 2006-03-31 | 2009-09-03 | インテル コーポレイション | インターコネクト用カーボンナノチューブはんだ組成物構造、当該はんだ組成物構造の作製方法、当該はんだ組成物構造を含むパッケージ、及び当該はんだ組成物構造を含むシステム |
US20090235915A1 (en) * | 2006-08-07 | 2009-09-24 | Doumanidis Charalabos C | Nanoheater elements, systems and methods of use thereof |
Also Published As
Publication number | Publication date |
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KR101343014B1 (ko) | 2013-12-18 |
WO2011046323A1 (en) | 2011-04-21 |
KR20120068973A (ko) | 2012-06-27 |
JP5337309B2 (ja) | 2013-11-06 |
US20110084061A1 (en) | 2011-04-14 |
US8344295B2 (en) | 2013-01-01 |
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