JP2013503430A5 - - Google Patents

Download PDF

Info

Publication number
JP2013503430A5
JP2013503430A5 JP2012526183A JP2012526183A JP2013503430A5 JP 2013503430 A5 JP2013503430 A5 JP 2013503430A5 JP 2012526183 A JP2012526183 A JP 2012526183A JP 2012526183 A JP2012526183 A JP 2012526183A JP 2013503430 A5 JP2013503430 A5 JP 2013503430A5
Authority
JP
Japan
Prior art keywords
processing chamber
vacuum processing
high vacuum
generating apparatus
discharge chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012526183A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013503430A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IL2010/000707 external-priority patent/WO2011024174A1/en
Publication of JP2013503430A publication Critical patent/JP2013503430A/ja
Publication of JP2013503430A5 publication Critical patent/JP2013503430A5/ja
Pending legal-status Critical Current

Links

JP2012526183A 2009-08-27 2010-08-29 高真空チャンバー用貫通型プラズマ発生装置 Pending JP2013503430A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23746209P 2009-08-27 2009-08-27
US61/237,462 2009-08-27
PCT/IL2010/000707 WO2011024174A1 (en) 2009-08-27 2010-08-29 Penetrating plasma generating apparatus for high vacuum chambers

Publications (2)

Publication Number Publication Date
JP2013503430A JP2013503430A (ja) 2013-01-31
JP2013503430A5 true JP2013503430A5 (enExample) 2014-05-15

Family

ID=45923892

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012526183A Pending JP2013503430A (ja) 2009-08-27 2010-08-29 高真空チャンバー用貫通型プラズマ発生装置

Country Status (4)

Country Link
US (1) US20120212136A1 (enExample)
JP (1) JP2013503430A (enExample)
CN (1) CN102598201A (enExample)
CA (1) CA2772178A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9035553B2 (en) * 2011-11-09 2015-05-19 Dae-Kyu Choi Hybrid plasma reactor
US20130118589A1 (en) * 2011-11-15 2013-05-16 Mks Instruments, Inc. Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel
DE102012107282A1 (de) * 2012-01-17 2013-07-18 Reinhausen Plasma Gmbh Vorrichtung und verfahren zur plasmabehandlung von oberflächen
US20140272108A1 (en) * 2013-03-15 2014-09-18 Plasmability, Llc Toroidal Plasma Processing Apparatus
US9560730B2 (en) 2013-09-09 2017-01-31 Asml Netherlands B.V. Transport system for an extreme ultraviolet light source
US9557650B2 (en) 2013-09-09 2017-01-31 Asml Netherlands B.V. Transport system for an extreme ultraviolet light source
KR20180000721A (ko) 2015-05-21 2018-01-03 플라즈마빌리티, 엘엘씨 성형된 피처리물 지지체를 갖는 토로이달 플라즈마 처리 장치
US9776218B2 (en) 2015-08-06 2017-10-03 Asml Netherlands B.V. Controlled fluid flow for cleaning an optical element
JP7085898B2 (ja) * 2018-05-25 2022-06-17 東京エレクトロン株式会社 ラジカル失活部品及びこれを用いたプラズマ処理装置
US10553403B1 (en) * 2019-05-08 2020-02-04 Mks Instruments, Inc. Polygonal toroidal plasma source
CN111416185B (zh) * 2020-03-18 2021-06-22 中国科学院近代物理研究所 一种用于ecr离子源的高压隔离波导
CN112383997B (zh) * 2020-10-05 2024-10-25 四川大学 一种大功率微波等离子体煤粉裂解装置
KR20220107521A (ko) * 2021-01-25 2022-08-02 (주) 엔피홀딩스 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법
CN115604899A (zh) * 2021-07-09 2023-01-13 北京北方华创微电子装备有限公司（Cn） 用于产生等离子体的线圈结构及半导体工艺设备
CN114018849B (zh) * 2021-11-24 2023-10-03 云南孚尔质量检验检测有限公司 一种具有远程监测功能的水质检测系统
US12284747B2 (en) 2023-03-07 2025-04-22 Finesse Technology Co., Ltd. Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same
TWI874990B (zh) * 2023-03-07 2025-03-01 明遠精密科技股份有限公司 中空陰極放電輔助之變壓器耦合電漿源結構及其運作方法
CN119747317B (zh) * 2025-03-03 2025-06-27 江西祥益鼎盛科技有限公司 一种线路板用的等离子清洗机

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6273950B1 (en) * 1996-04-18 2001-08-14 Matsushita Electric Industrial Co., Ltd. SiC device and method for manufacturing the same
US5767627A (en) * 1997-01-09 1998-06-16 Trusi Technologies, Llc Plasma generation and plasma processing of materials
US7569790B2 (en) * 1997-06-26 2009-08-04 Mks Instruments, Inc. Method and apparatus for processing metal bearing gases
US6815633B1 (en) * 1997-06-26 2004-11-09 Applied Science & Technology, Inc. Inductively-coupled toroidal plasma source
US6150628A (en) * 1997-06-26 2000-11-21 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7166816B1 (en) * 1997-06-26 2007-01-23 Mks Instruments, Inc. Inductively-coupled torodial plasma source
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6392351B1 (en) * 1999-05-03 2002-05-21 Evgeny V. Shun'ko Inductive RF plasma source with external discharge bridge
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
US20050034668A1 (en) * 2001-03-22 2005-02-17 Garvey James F. Multi-component substances and apparatus for preparation thereof
KR100542740B1 (ko) * 2002-11-11 2006-01-11 삼성전자주식회사 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법
US20050058872A1 (en) * 2003-09-12 2005-03-17 Blanchet Scott C. Connection assembly for promoting electrical isolation
US8031824B2 (en) * 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
EP1727186B1 (en) * 2005-05-23 2012-01-25 New Power Plasma Co., Ltd. Plasma chamber with discharge inducing bridge
US20090152684A1 (en) * 2007-12-18 2009-06-18 Li-Peng Wang Manufacture-friendly buffer layer for ferroelectric media
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
WO2011142125A1 (ja) * 2010-05-13 2011-11-17 パナソニック株式会社 プラズマ処理装置及び方法

Similar Documents

Publication Publication Date Title
TWI701703B (zh) 用於供應電漿產物之裝置
CN107004561B (zh) 具有直接出口环状等离子体源的等离子体处理系统
US10374358B2 (en) Feeder-cover structure and semiconductor production apparatus
CN104505325B (zh) 一种高电压气体放电电子枪装置
US20120212136A1 (en) Penetrating plasma generating apparatus for high vacuum chambers
US20080050292A1 (en) Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
US12412733B2 (en) Electrode array
TW201521150A (zh) 具有射頻發射器的可旋轉基板支撐件
CN103781271A (zh) 一种可用于伤口愈合的常压冷等离子体发生装置
CN112908817B (zh) 射频阴极中和器
US20110192348A1 (en) RF Hollow Cathode Plasma Generator
CN104867801A (zh) 电感耦合等离子体喷枪及等离子体设备
CN208970478U (zh) 离子源和等离子体处理设备
CN108155080A (zh) 等离子体产生装置及包括该装置的半导体设备
WO2023047786A1 (ja) 円形加速器、粒子線治療システム、およびイオン源
TW201628053A (zh) 火室、電漿產生器、及電漿產生方法
KR101577272B1 (ko) 롤투롤 공정을 위한 플라즈마 처리장치
CN116170931B (zh) 一种基于dbd的增强放电功率的设备和方法
CN110970280A (zh) 离子源和等离子体处理设备
WO2012036491A2 (ko) 누설 전류형 변압기를 이용한 플라즈마 처리장치
US10665428B2 (en) Plasma processing apparatus
CN210328103U (zh) 一种等离子发生器
CN115426760A (zh) 一种高真空环境用等离子体源自启动装置
KR101336798B1 (ko) 다중 가스 공급 구조를 갖는 다중 방전관 플라즈마 반응기
CN223168454U (zh) 一种等离子体发生装置