JP2013503430A - 高真空チャンバー用貫通型プラズマ発生装置 - Google Patents
高真空チャンバー用貫通型プラズマ発生装置 Download PDFInfo
- Publication number
- JP2013503430A JP2013503430A JP2012526183A JP2012526183A JP2013503430A JP 2013503430 A JP2013503430 A JP 2013503430A JP 2012526183 A JP2012526183 A JP 2012526183A JP 2012526183 A JP2012526183 A JP 2012526183A JP 2013503430 A JP2013503430 A JP 2013503430A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- dch
- pch
- section
- high vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000035515 penetration Effects 0.000 title description 2
- 238000012545 processing Methods 0.000 claims abstract description 106
- 238000004157 plasmatron Methods 0.000 claims abstract description 79
- 239000004020 conductor Substances 0.000 claims abstract description 59
- 238000004804 winding Methods 0.000 claims abstract description 34
- 210000002381 plasma Anatomy 0.000 claims description 491
- 239000002826 coolant Substances 0.000 claims description 42
- 238000001704 evaporation Methods 0.000 claims description 24
- 230000008020 evaporation Effects 0.000 claims description 24
- 210000004027 cell Anatomy 0.000 claims description 23
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000110 cooling liquid Substances 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000002128 reflection high energy electron diffraction Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 244000144985 peep Species 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 abstract description 49
- 238000005516 engineering process Methods 0.000 description 83
- 239000011162 core material Substances 0.000 description 72
- 239000007789 gas Substances 0.000 description 48
- 229910001220 stainless steel Inorganic materials 0.000 description 31
- 239000010935 stainless steel Substances 0.000 description 31
- 230000005684 electric field Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 24
- 230000035699 permeability Effects 0.000 description 22
- 229920006362 Teflon® Polymers 0.000 description 21
- 239000000758 substrate Substances 0.000 description 21
- 239000004809 Teflon Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 18
- 150000002500 ions Chemical class 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 13
- 239000007787 solid Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 239000003574 free electron Substances 0.000 description 9
- 229910000859 α-Fe Inorganic materials 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000001311 chemical methods and process Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005495 cold plasma Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004871 chemical beam epitaxy Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23746209P | 2009-08-27 | 2009-08-27 | |
| US61/237,462 | 2009-08-27 | ||
| PCT/IL2010/000707 WO2011024174A1 (en) | 2009-08-27 | 2010-08-29 | Penetrating plasma generating apparatus for high vacuum chambers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013503430A true JP2013503430A (ja) | 2013-01-31 |
| JP2013503430A5 JP2013503430A5 (enExample) | 2014-05-15 |
Family
ID=45923892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012526183A Pending JP2013503430A (ja) | 2009-08-27 | 2010-08-29 | 高真空チャンバー用貫通型プラズマ発生装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120212136A1 (enExample) |
| JP (1) | JP2013503430A (enExample) |
| CN (1) | CN102598201A (enExample) |
| CA (1) | CA2772178A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016520950A (ja) * | 2013-03-15 | 2016-07-14 | プラズマビリティー, エルエルシー | トロイダルプラズマ処理装置 |
| US10443150B2 (en) | 2015-05-21 | 2019-10-15 | Plasmability, Llc | Toroidal plasma processing apparatus with a shaped workpiece holder |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9035553B2 (en) * | 2011-11-09 | 2015-05-19 | Dae-Kyu Choi | Hybrid plasma reactor |
| US20130118589A1 (en) * | 2011-11-15 | 2013-05-16 | Mks Instruments, Inc. | Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel |
| DE102012107282A1 (de) * | 2012-01-17 | 2013-07-18 | Reinhausen Plasma Gmbh | Vorrichtung und verfahren zur plasmabehandlung von oberflächen |
| US9560730B2 (en) | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
| US9557650B2 (en) | 2013-09-09 | 2017-01-31 | Asml Netherlands B.V. | Transport system for an extreme ultraviolet light source |
| US9776218B2 (en) | 2015-08-06 | 2017-10-03 | Asml Netherlands B.V. | Controlled fluid flow for cleaning an optical element |
| JP7085898B2 (ja) * | 2018-05-25 | 2022-06-17 | 東京エレクトロン株式会社 | ラジカル失活部品及びこれを用いたプラズマ処理装置 |
| US10553403B1 (en) * | 2019-05-08 | 2020-02-04 | Mks Instruments, Inc. | Polygonal toroidal plasma source |
| CN111416185B (zh) * | 2020-03-18 | 2021-06-22 | 中国科学院近代物理研究所 | 一种用于ecr离子源的高压隔离波导 |
| CN112383997B (zh) * | 2020-10-05 | 2024-10-25 | 四川大学 | 一种大功率微波等离子体煤粉裂解装置 |
| KR20220107521A (ko) * | 2021-01-25 | 2022-08-02 | (주) 엔피홀딩스 | 반응기, 이를 포함하는 공정 처리 장치 및 반응기 제조 방법 |
| CN115604899A (zh) * | 2021-07-09 | 2023-01-13 | 北京北方华创微电子装备有限公司(Cn) | 用于产生等离子体的线圈结构及半导体工艺设备 |
| CN114018849B (zh) * | 2021-11-24 | 2023-10-03 | 云南孚尔质量检验检测有限公司 | 一种具有远程监测功能的水质检测系统 |
| US12284747B2 (en) | 2023-03-07 | 2025-04-22 | Finesse Technology Co., Ltd. | Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same |
| TWI874990B (zh) * | 2023-03-07 | 2025-03-01 | 明遠精密科技股份有限公司 | 中空陰極放電輔助之變壓器耦合電漿源結構及其運作方法 |
| CN119747317B (zh) * | 2025-03-03 | 2025-06-27 | 江西祥益鼎盛科技有限公司 | 一种线路板用的等离子清洗机 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002507315A (ja) * | 1997-06-26 | 2002-03-05 | アプライド サイエンス アンド テクノロジー,インコーポレイテッド | トロイダル低電場反応性ガスソース |
| US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
| JP2006332055A (ja) * | 2005-05-23 | 2006-12-07 | New Power Plasma Co Ltd | プラズマ処理チャンバ、プラズマ反応器、大気圧プラズマ処理システム及びプラズマ処理システム |
| WO2011142125A1 (ja) * | 2010-05-13 | 2011-11-17 | パナソニック株式会社 | プラズマ処理装置及び方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6273950B1 (en) * | 1996-04-18 | 2001-08-14 | Matsushita Electric Industrial Co., Ltd. | SiC device and method for manufacturing the same |
| US5767627A (en) * | 1997-01-09 | 1998-06-16 | Trusi Technologies, Llc | Plasma generation and plasma processing of materials |
| US7569790B2 (en) * | 1997-06-26 | 2009-08-04 | Mks Instruments, Inc. | Method and apparatus for processing metal bearing gases |
| US6815633B1 (en) * | 1997-06-26 | 2004-11-09 | Applied Science & Technology, Inc. | Inductively-coupled toroidal plasma source |
| US7166816B1 (en) * | 1997-06-26 | 2007-01-23 | Mks Instruments, Inc. | Inductively-coupled torodial plasma source |
| US6203657B1 (en) * | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
| US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
| US20050034668A1 (en) * | 2001-03-22 | 2005-02-17 | Garvey James F. | Multi-component substances and apparatus for preparation thereof |
| KR100542740B1 (ko) * | 2002-11-11 | 2006-01-11 | 삼성전자주식회사 | 가스 플라즈마 생성 방법 및 장치, 플라즈마 생성용 가스조성물 및 이를 이용한 반도체 장치의 제조 방법 |
| US20050058872A1 (en) * | 2003-09-12 | 2005-03-17 | Blanchet Scott C. | Connection assembly for promoting electrical isolation |
| US8031824B2 (en) * | 2005-03-07 | 2011-10-04 | Regents Of The University Of California | Inductive plasma source for plasma electric generation system |
| US20090152684A1 (en) * | 2007-12-18 | 2009-06-18 | Li-Peng Wang | Manufacture-friendly buffer layer for ferroelectric media |
| US7999479B2 (en) * | 2009-04-16 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control |
-
2010
- 2010-08-29 CN CN2010800488903A patent/CN102598201A/zh active Pending
- 2010-08-29 US US13/392,810 patent/US20120212136A1/en not_active Abandoned
- 2010-08-29 JP JP2012526183A patent/JP2013503430A/ja active Pending
- 2010-08-29 CA CA2772178A patent/CA2772178A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002507315A (ja) * | 1997-06-26 | 2002-03-05 | アプライド サイエンス アンド テクノロジー,インコーポレイテッド | トロイダル低電場反応性ガスソース |
| US6392351B1 (en) * | 1999-05-03 | 2002-05-21 | Evgeny V. Shun'ko | Inductive RF plasma source with external discharge bridge |
| JP2006332055A (ja) * | 2005-05-23 | 2006-12-07 | New Power Plasma Co Ltd | プラズマ処理チャンバ、プラズマ反応器、大気圧プラズマ処理システム及びプラズマ処理システム |
| WO2011142125A1 (ja) * | 2010-05-13 | 2011-11-17 | パナソニック株式会社 | プラズマ処理装置及び方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016520950A (ja) * | 2013-03-15 | 2016-07-14 | プラズマビリティー, エルエルシー | トロイダルプラズマ処理装置 |
| US10443150B2 (en) | 2015-05-21 | 2019-10-15 | Plasmability, Llc | Toroidal plasma processing apparatus with a shaped workpiece holder |
| US10704161B2 (en) | 2015-05-21 | 2020-07-07 | Plasmability, Llc | Toroidal plasma processing apparatus with a shaped workpiece holder |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102598201A (zh) | 2012-07-18 |
| CA2772178A1 (en) | 2011-03-03 |
| US20120212136A1 (en) | 2012-08-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20120212136A1 (en) | Penetrating plasma generating apparatus for high vacuum chambers | |
| US11450509B2 (en) | Inductive plasma source with metallic shower head using b-field concentrator | |
| US5996528A (en) | Method and apparatus for flowing gases into a manifold at high potential | |
| CN107004561B (zh) | 具有直接出口环状等离子体源的等离子体处理系统 | |
| US10573496B2 (en) | Direct outlet toroidal plasma source | |
| CA2386078C (en) | Uniform gas distribution in large area plasma source | |
| KR100639843B1 (ko) | Hdp-cvd챔버용플라즈마소오스 | |
| KR20200118225A (ko) | 반도체 공정들 및 장비를 위한 자기 유도 플라즈마 소스 | |
| US20140178604A1 (en) | Dual-Zone, Atmospheric-Pressure Plasma Reactor for Materials Processing | |
| AU2010288081B2 (en) | Penetrating plasma generating apparatus for high vacuum chambers | |
| US11956882B2 (en) | High-power plasma torch with dielectric resonator | |
| US12068133B2 (en) | Reactor, process processing apparatus including the same and method for manufacturing reactor | |
| CN117894662B (zh) | 一种工艺腔室及半导体工艺设备 | |
| KR100805558B1 (ko) | 마그네틱 코어에 결합된 다중 방전 튜브를 구비한 유도 결합 플라즈마 소스 | |
| US20060290301A1 (en) | Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particles | |
| KR20170134000A (ko) | 다중 플라즈마 채널을 갖는 플라즈마 챔버 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130822 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130822 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140328 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20140328 |
|
| A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20140410 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140430 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141007 |